CN209729924U - A kind of heat resistanceheat resistant spot flexibility crystal silicon component - Google Patents
A kind of heat resistanceheat resistant spot flexibility crystal silicon component Download PDFInfo
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- CN209729924U CN209729924U CN201920581208.5U CN201920581208U CN209729924U CN 209729924 U CN209729924 U CN 209729924U CN 201920581208 U CN201920581208 U CN 201920581208U CN 209729924 U CN209729924 U CN 209729924U
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- battery pack
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a kind of heat resistanceheat resistant spot flexibility crystal silicon component include it is transparent have a cover plate, group string location layer, organic backboard and flexible encapsulant material, and described group of string location layer is fixed on by the flexible encapsulant material and described transparent has between cover plate and organic backboard；Described group of string location layer includes a plurality of battery pack strings parallel with one another, is reserved with gap between the adjacent battery pack string and is filled by the flexible encapsulant material.The utility model in parallel between each group string location and each crystal-silicon battery slice with a diodes in parallel by way of, effectively reduce the electric current by each crystal-silicon battery slice, thereby reduce calorific value when hot spot effect occurs；By preset clearance and filling flexible encapsulating material between each group string location, entire component is enable to carry out bending change on the direction using group string location as axis, expands application scenarios and non-aging.
Description
Technical field
The utility model relates to photovoltaic art, especially a kind of heat resistanceheat resistant spot flexibility crystal silicon component.
Background technique
Conventional crystal silicon component is typically all glass-cell piece-glass sandwich slab construction, due to crystal silicon battery
Piece and glass are all rigid, and are difficult to apply in the occasion for needing curved surface to apply, while curved element is because of different location stress
It is not of uniform size, it is laminated also very difficult；Additionally, due to curved surface due to inclination angle, cause group string size of current uneven,
To which the utilization rate of component is significantly less than conventional crystal silicon component.Meanwhile for avoid component in use because by tree shade, fall
When leaf, birds droppings etc. block, " hot spot effect " component hot-spot, which occurs, causes component package material failure, packaged glass due to heat
Amount is uneven to occur the serious consequences such as self-destruction, conventional crystal silicon component parallel diode usually in assembly junction box, allow electric current from
The series-parallel bypass diode of the group being blocked is connected to prevent hot spot effect.Since this preventing hot spot mode is only to monoblock unit
Effectively, when component is locally blocked, the effective output that will lead to whole system obviously drops；And component for long periods office
Portion's fever work, will carry out risk to system safety belt.
Currently, having by the way of " encapsulation of cloth base " one-pass molding or " prefabricated unit+cloth base encapsulation " post forming, to make
Make flexible crystal silicon component；But these methods are due to the knot between the weatherability and cloth-based material and organic material of cloth-based material itself
The factors such as resultant force cause to be easy by moisture attack, cloth-based material between cloth-based material and prefabricated unit vulnerable to steam, ultraviolet light
Act on aging, so that cloth-based material delamination is failed, seriously affect assembly life-span and appearance, and post forming mode due to structure it is multiple
Miscellaneous, packaging process is many and diverse, all influence component production efficiency and yield.On the other hand, traditional flexible crystal silicon component is commonly applied to
The lesser scene of smooth or bending degree, it is difficult to be applied to surface condition complexity or the biggish scene of bending degree, answer
More limited to scene.Therefore urgently propose a kind of new flexible crystal silicon component, for solving above-mentioned existing in the prior art one
The problem of series.
Utility model content
The purpose of the utility model is to provide a kind of heat resistanceheat resistant spot flexibility crystal silicon components, soft in the prior art for solving
Property crystal silicon component occur there are problems that security risk when " hot spot effect ", and the flexible crystal silicon that traditional cloth base encapsulation is prepared
Component application scenarios limitation and problem easy to aging.
In order to solve the above technical problems, it includes transparent having cover that the utility model, which provides a kind of heat resistanceheat resistant spot flexibility crystal silicon component,
Plate, group string location layer, organic backboard and flexible encapsulant material, and organize string location layer and be fixed on by flexible encapsulant material and transparent have
Between cover plate and organic backboard；Group string location layer includes a plurality of battery pack strings parallel with one another, between adjacent cell group string
It is reserved with gap and is filled by flexible encapsulant material.
Wherein, group string location layer further includes busbar and drainage strip, and a plurality of battery pack strings are converged by busbar parallel connection
Stream item is electrically connected by drainage strip with external circuit.
Wherein, battery pack string includes crystal-silicon battery slice, welding, diode and semi-rigid substrate；A plurality of crystal-silicon battery slices
Be fixed on semi-rigid substrate after being connected by welding by flexible encapsulant material, and each crystal-silicon battery slice with a diode
Pass through welding parallel connection.
Wherein, semi-rigid substrate is the semi-rigid material of strip, and on the direction perpendicular to semi-rigid substrate, battery
The projection pattern of group string is identical as the projection pattern of semi-rigid substrate.
Wherein, the short side both ends of battery pack string are respectively anode and cathode, and a plurality of battery pack strings are put down along the long side direction
Row arrangement simultaneously passes through busbar parallel connection.
The beneficial effects of the utility model are: being in contrast to the prior art, the utility model provides a kind of heat resistanceheat resistant spot
Flexible crystal silicon component, in parallel between each group string location and each crystal-silicon battery slice with a diodes in parallel by way of,
The electric current by each crystal-silicon battery slice is effectively reduced, calorific value when hot spot effect occurs is thereby reduced；By each
Preset clearance and filling flexible encapsulating material between group string location, enable entire component enterprising as the direction of axis using group string location
Row bending change expands application scenarios and non-aging.
Detailed description of the invention
Fig. 1 is the overlooking structure diagram of one embodiment of heat resistanceheat resistant spot flexibility crystal silicon component in the utility model；
Fig. 2 is the separated structure schematic diagram of one embodiment of heat resistanceheat resistant spot flexibility crystal silicon component in the utility model；
Fig. 3 is the group string location layer diagrammatic cross-section in Fig. 1 along the direction A-A；
Fig. 4 is the group string location layer diagrammatic cross-section in Fig. 1 before the hot pressing in the direction B-B；
Fig. 5 is the group string location layer diagrammatic cross-section in Fig. 1 after the hot pressing in the direction B-B；
Fig. 6 is the curved schematic of one embodiment of heat resistanceheat resistant spot flexibility crystal silicon component in the utility model.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained belongs to the range of the utility model protection.
Fig. 1 and Fig. 2 are please referred to, Fig. 1 is the vertical view knot of one embodiment of heat resistanceheat resistant spot flexibility crystal silicon component in the utility model
Structure schematic diagram, Fig. 2 are the separated structure schematic diagrames of one embodiment of heat resistanceheat resistant spot flexibility crystal silicon component in the utility model, wherein 1
There is a cover plate to be transparent, 2 be a group string location layer, and 21 be battery pack string, and 22 be busbar, and 23 be drainage strip, and 3 be organic backboard, 4
For flexible encapsulant material.In the utility model heat resistanceheat resistant spot flexibility crystal silicon component include it is transparent have a cover plate 1, organize string location layer 2, have
Machine backboard 3 and flexible encapsulant material 4, and organize string location layer 2 by flexible encapsulant material 4 be fixed on it is transparent have cover plate 1 and have
Between machine backboard 3；Group string location layer includes a plurality of battery pack strings 21, busbar 22 and drainage strip 23, adjacent cell group string 21
Between be reserved with gap and filled by flexible encapsulant material 4, a plurality of battery pack strings 21 are in parallel by busbar 22, busbar 22
It is electrically connected by drainage strip 23 with external circuit.
Specifically, display elaboration is carried out to the structure of battery pack string 21 in present embodiment, referring to Fig. 3, Fig. 3 is Fig. 1
The middle group string location layer diagrammatic cross-section along the direction A-A, wherein 211 be crystal-silicon battery slice, and 212 be welding, and 213 be diode,
214 be semi-rigid substrate.Battery pack string 21 includes crystal-silicon battery slice 211, welding 212, diode 213 and half in present embodiment
Rigid substrate 214；A plurality of crystal-silicon battery slices 211 pass through flexible encapsulant material 4 after being connected by welding 213 and are fixed on semi-rigid lining
On bottom 214, and each crystal-silicon battery slice 211 is in parallel by welding 212 with a diode 213, it is intended that by each
The electric current by each battery is reduced after the diode 213 in parallel of crystal-silicon battery slice 211, to reduce generation hot spot
Calorific value when effect.In present embodiment, above-mentioned semi-rigid substrate 214 be strip semi-rigid material, and perpendicular to
On the direction of semi-rigid substrate 214, the projection pattern of battery pack string is identical as the projection pattern of semi-rigid substrate, i.e. group string location
All constituents in 21 are within the scope of the projection pattern of semi-rigid substrate 214；Above-mentioned battery pack string 21 is also strip
Shape, the short side both ends of battery pack string 21 are respectively anode and cathode, and parallel arrangement is simultaneously along the long side direction for a plurality of battery pack strings 21
By busbar parallel connection, and gap is reserved between adjacent cell group string 21；Busbar 22 is set to the table of crystal-silicon battery slice 211
Face is simultaneously electrically connected with crystal-silicon battery slice 211, for the anode and cathode of a plurality of battery pack strings 21 to be connected in turn, is converged
The specific set-up mode of item 22 can be designed according to the actual situation, be not limited thereto.
And be reserved with gap between above-mentioned adjacent cell group string 21 and filled by flexible encapsulant material 4, this filling process
It is to be realized by hot pressing, please refers to Fig. 4 and Fig. 5, Fig. 4 is the group string location layer section in Fig. 1 before the hot pressing in the direction B-B
Schematic diagram, Fig. 5 are the group string location layer diagrammatic cross-sections in Fig. 1 after the hot pressing in the direction B-B.Specifically, before without hot pressing,
Group string location layer 2 by flexible encapsulant material 4 be fixed on it is transparent have between cover plate 1 and organic backboard 3, but organize string location layer 2
In adjacent each battery pack string 21 still with the presence of gap；And after hot-pressing processing, organize the flexible package of 2 two sides of string location layer
Material 4 gradually penetrates into the gap between adjacent cell group string 21 until the gap is sealed by flexibility completely because Heated Flow enhances
Package material 4 is filled, that is, completes above-mentioned filling process.Due to the flexible package material of gap filling between adjacent cell group string 21
Material 4, just enables heat resistanceheat resistant spot flexibility crystal silicon component bending change in present embodiment, is greatly enlarged application scenarios, and phase
Than having expanded application scenarios and non-aging for traditional cloth base packaged type；As shown in fig. 6, due to electric in present embodiment
Pond group string 21 is strip, then heat resistanceheat resistant spot flexibility crystal silicon component can be that axis carries out bending change with the battery pack string 21 of any strip
Change, in other embodiments can the pattern according to the actual situation to battery pack string be adjusted, it is flexible to meet heat resistanceheat resistant spot
Crystal silicon component carries out the deformation of other modes, does not enumerate herein.
In present embodiment, the selection of the material of each component part of heat resistanceheat resistant spot flexibility crystal silicon component includes: transparent to have machine side
Plate 1 can be transpex panel, transparent polyethylene terephthalate panel or similar transparent organic
Material cladding is constituted；Semi-rigid substrate 214 can be phenolic resin, epoxy resin, glass fibre/epoxy resin, polyimides
Equal semi-rigid materials；Flexible encapsulant material 4 can be polyolefin elastomer, ethylene-vinyl acetate copolymer, polyvinyl alcohol contracting fourth
Aldehyde or organic silica gel；Crystal-silicon battery slice 211 can be the cutting sheet of Monocrystalline silicon cell piece, polycrystalline silicon battery plate or both；Two poles
Manage preferred press-button type diode.In other embodiments, the material with identity function can also be selected according to the actual situation,
It is not limited thereto.
It is in contrast to the prior art, the utility model provides a kind of heat resistanceheat resistant spot flexibility crystal silicon component, passes through each group string
Mode of in parallel and each crystal-silicon battery slice with a diodes in parallel between unit is effectively reduced through each crystal silicon electricity
The electric current of pond piece thereby reduces calorific value when hot spot effect occurs；By the preset clearance between each group string location and fill out
Flexible encapsulant material is filled, entire component is enable to carry out bending change on the direction using group string location as axis, expands application scenarios
And it is non-aging.
The above-mentioned embodiments merely express the embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
The limitation to utility model patent range therefore cannot be interpreted as.It should be pointed out that for the ordinary skill people of this field
For member, without departing from the concept of the premise utility, various modifications and improvements can be made, these belong to this reality
With novel protection scope.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (5)
1. a kind of heat resistanceheat resistant spot flexibility crystal silicon component, which is characterized in that have cover plate, group string location layer, organic backboard including transparent
And flexible encapsulant material, and described group of string location layer is fixed on by the flexible encapsulant material described transparent has cover plate and institute
It states between organic backboard；Described group of string location layer includes a plurality of battery pack strings parallel with one another, the adjacent battery pack string it
Between be reserved with gap and filled by the flexible encapsulant material.
2. heat resistanceheat resistant spot flexibility crystal silicon component according to claim 1, which is characterized in that described group of string location layer further include
Busbar and drainage strip, and a plurality of battery pack strings are in parallel by the busbar, the busbar passes through the drainage
Item is electrically connected with external circuit.
3. heat resistanceheat resistant spot flexibility crystal silicon component according to claim 2, which is characterized in that the battery pack string includes crystal silicon
Cell piece, welding, diode and semi-rigid substrate；A plurality of crystal-silicon battery slices pass through described soft after being connected by the welding
Property encapsulating material is fixed on the semi-rigid substrate, and each crystal-silicon battery slice passes through institute with a diode
State welding parallel connection.
4. heat resistanceheat resistant spot flexibility crystal silicon component according to claim 3, which is characterized in that the semi-rigid substrate is strip
The semi-rigid material of shape, and on the direction perpendicular to the semi-rigid substrate, the projection pattern of the battery pack string with it is described
The projection pattern of semi-rigid substrate is identical.
5. heat resistanceheat resistant spot flexibility crystal silicon component according to claim 4, which is characterized in that the short side two of the battery pack string
End be respectively anode and cathode, and a plurality of battery pack strings along the long side direction parallel arrangement and by the busbar simultaneously
Connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920581208.5U CN209729924U (en) | 2019-04-24 | 2019-04-24 | A kind of heat resistanceheat resistant spot flexibility crystal silicon component |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920581208.5U CN209729924U (en) | 2019-04-24 | 2019-04-24 | A kind of heat resistanceheat resistant spot flexibility crystal silicon component |
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| CN209729924U true CN209729924U (en) | 2019-12-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109962121A (en) * | 2019-04-24 | 2019-07-02 | 黄石金能光伏有限公司 | A kind of heat resistanceheat resistant spot flexibility crystal silicon component and preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109962121A (en) * | 2019-04-24 | 2019-07-02 | 黄石金能光伏有限公司 | A kind of heat resistanceheat resistant spot flexibility crystal silicon component and preparation method |
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Legal Events
| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200814 Address after: 430040 building 3, photovoltaic industrial park, Wuhan Rixin Technology Co., Ltd., No. 6, Shanzhong Road, Maodian, Donghu Development Zone, Wuhan, Hubei Province Patentee after: WUHAN RIXIN TECHNOLOGY LIGHTING Co.,Ltd. Address before: 435000 No. 189, Jinshan Avenue, Hubei, Huangshi Patentee before: HUANGSHI JINNENG PHOTOVOLTAIC Co.,Ltd. |
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| TR01 | Transfer of patent right |