CN109950132A - A kind of method of Tubular PECVD device double-sided deposition solar battery amorphous silicon layer - Google Patents
A kind of method of Tubular PECVD device double-sided deposition solar battery amorphous silicon layer Download PDFInfo
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Abstract
The method of Tubular PECVD device double-sided deposition solar battery amorphous silicon layer of the present invention, using Tubular PECVD device, two-sided amorphous silicon plated film is carried out simultaneously to solar battery, PECVD pipe quantity can be reduced, reduce equipment cost, flaps process is reduced, silicon chip surface friction and pollution are prevented, improves non-passivation effect；Easy to operate, the consuming time is short, high-efficient, and equipment cost, production cost investment are cheap, and production capacity is high, is conducive to hetero-junction solar cell product scale of mass production.
Description
Technical field
The present invention relates to a kind of tubular type PECVD for depositing positive back side amorphous silicon film in solar battery manufacturing technology simultaneously to set
The method of standby double-sided deposition solar battery amorphous silicon layer.
Background technique
The positive back side of heterojunction solar battery all needs plating amorphous silicon film, in the prior art usually first to solar battery
Front plating N-shaped or p-type amorphous silicon film to rear surface of solar cell plating p-type or N-shaped amorphous silicon film after flaps, then plate respectively
Conductive film layer is covered, primary depositing preparation can only be to solar battery coated on one, and cumbersome, consuming time is long, low efficiency, if
Standby cost, production cost investment are high, also easily cause silicon chip surface friction and pollution during flaps, and production capacity is low, non-passivation effect
Fruit is bad, influences hetero-junction solar cell product scale of mass production.
Summary of the invention
The technical problem to be solved by the invention is to provide one kind can reduce PECVD pipe quantity, reduces equipment cost,
Flaps process is reduced, the method for improving the Tubular PECVD device double-sided deposition solar battery amorphous silicon layer of non-passivation effect.
The method of Tubular PECVD device double-sided deposition solar battery amorphous silicon layer of the present invention, it is characterised in that: including with
Lower step:
1) silicon wafer cleans the texturing to form surface by chemicals；
2) positive back side intrinsic amorphous silicon film layer is formed simultaneously in texturing silicon chip surface using Tubular PECVD device；
3) N-shaped or p-type doping amorphous silicon layer are formed in the intrinsic amorphous silicon film layer of front using Tubular PECVD device；
4) using formation p-type or n-type doping amorphous silicon layer in Tubular PECVD device overleaf intrinsic amorphous silicon film layer；
5) the positive back side is formed on positive back side doped amorphous silicon film layer forms transparent conductive film layer；
6) correcting back metal electrode is formed on positive backing transparent conductive film layer；
7) curing metal electrode；
8) testing, sorting；
The conduction type of silicon wafer is N-type in the step 1), and square monocrystalline silicon piece, the thickness of monocrystalline silicon preferably exist subject to shape
50-200 μm, resistivity is 0.2-7 Ω cm；Middle texturing is constituted by way of alkali liquid corrosion, and flannelette size preferably controls
At 1-10 μm, aqueous slkali preferred KOH or NaOH；
It is tubular type plasma chemistry gas that the positive back side of texturing silicon wafer, which forms the mode of intrinsic amorphous silicon film layer, in the step 2
It mutually deposits, positive back side intrinsic amorphous silicon film layer is with a thickness of 5-20 nm；The silicon wafer of Tubular PECVD device is placed on graphite boat, stone
Black boat piece is hollow out shape, and by stuck point, silicon wafer is fixed on hollowed out area by the modes such as card slot, so that silicon chip edge and graphite boat
Piece contact, plays conductive effect；The silicon wafer placed in graphite boat piece and graphite boat piece is as electrode, in Tubular PECVD device
Portion is passed through silane, H2Mixed gas forms plasma；
Front uses N-shaped amorphous silicon film layer or p-type amorphous silicon film layer in the step 3)；
The back side uses p-type amorphous silicon film layer or N-shaped amorphous silicon film layer in the step 4), and P-type non-crystalline silicon thicknesses of layers is 5-20
Nm, N-type amorphous silicon film layer is with a thickness of 5-20 nm；The amorphous silicon type of positive back side doping is in special-shaped symmetrical structure, i.e. N/P or P/
N；
The positive backside deposition transparent conductive film in doped amorphous silicon surface, implementation are preferably magnetron sputtering in the step 5)
Or reactive plasma deposition, one of depositional coating ITO, IWO, AZO, positive back side film material are all Coating Materials of the same race,
Coating film thickness is 60-120nm；
The metal electrode of the step 6) is preferably silver electrode, and implementation is silk-screen printing, and silver electrode has main grid simultaneously
Line, secondary grid line, main gate line and thin grid line vertical distribution, main gate line line number are 0-20, and main grid line width is 0-1.2mm, secondary grid line
Line number is 80-200, and secondary grid line width is 20-60 μm；
The step 7) solidification temperature is no more than 200 DEG C, and the sorting of process 8 is carried out under standard test condition.
The method of Tubular PECVD device double-sided deposition solar battery amorphous silicon layer of the present invention, is set using tubular type PECVD
It is standby, two-sided amorphous silicon plated film is carried out simultaneously to solar battery, PECVD pipe quantity can be reduced, reduce equipment cost, reduction is turned over
Piece process prevents silicon chip surface friction and pollution, improves non-passivation effect；Easy to operate, the consuming time is short, high-efficient, equipment
Cost, production cost investment are cheap, and production capacity is high, are conducive to hetero-junction solar cell product scale of mass production.
Detailed description of the invention
Fig. 1 is that the method for Tubular PECVD device double-sided deposition solar battery amorphous silicon layer of the embodiment of the present invention is given birth to
The HJT battery structure of production is consistent with conventional H JT battery structure, in figure:
1, front metal electrode
2, front transparent conductive film
3, front doped amorphous silicon film,
4, front intrinsic amorphous silicon film
5, N-type crystalline silicon substrate
6, back side intrinsic amorphous silicon film
7, back side doped amorphous silicon film
8, backing transparent conductive film
9, back metal electrode；
Fig. 2 is Tubular PECVD device structural schematic diagram of the embodiment of the present invention, in figure:
11, air inlet
12, radio-frequency power supply
13, insulating bar
14, slide glass
15, tail gas gas outlet
16, zero potential；
Fig. 3 is the local graphite boat chip architecture schematic diagram of Fig. 2.
Specific embodiment
As shown, a kind of method of Tubular PECVD device double-sided deposition solar battery amorphous silicon layer, in traditional HJT
The process flow of battery routine:
1) silicon wafer cleans the texturing to form surface by chemicals；
2) front intrinsic amorphous silicon film layer is formed in texturing front side of silicon wafer；
3) N-shaped or p-type doping amorphous silicon layer are formed in the intrinsic amorphous silicon film layer of front；
4) back side intrinsic amorphous silicon film layer is formed in texturing silicon chip back side；
5) p-type or n-type doping amorphous silicon layer are overleaf formed in intrinsic amorphous silicon film layer；
6) the positive back side is formed on positive back side doped amorphous silicon film layer forms transparent conductive film layer；
7) correcting back metal electrode is formed on positive backing transparent conductive film layer；
8) curing metal electrode；
9) testing, sorting；
On the basis of, design improve, the present invention the following steps are included:
1) silicon wafer cleans the texturing to form surface by chemicals；
2) positive back side intrinsic amorphous silicon film layer is formed simultaneously in texturing silicon chip surface using Tubular PECVD device；
3) N-shaped or p-type doping amorphous silicon layer are formed in the intrinsic amorphous silicon film layer of front using Tubular PECVD device；
4) using formation p-type or n-type doping amorphous silicon layer in Tubular PECVD device overleaf intrinsic amorphous silicon film layer；
5) the positive back side is formed on positive back side doped amorphous silicon film layer forms transparent conductive film layer；
6) correcting back metal electrode is formed on positive backing transparent conductive film layer；
7) curing metal electrode；
8) testing, sorting；
The conduction type of silicon wafer is N-type in step 1), and square monocrystalline silicon piece subject to shape, the thickness of monocrystalline silicon is preferably in 50-200
μm, resistivity is 0.2-7 Ω cm；Middle texturing is constituted by way of alkali liquid corrosion, and flannelette size is preferably controlled in 1-10
μm, aqueous slkali preferred KOH or NaOH；
It is heavy for tubular type plasma enhanced chemical vapor to form the mode of intrinsic amorphous silicon film layer for the positive back side of texturing silicon wafer in step 2
Product, positive back side intrinsic amorphous silicon film layer is with a thickness of 5-20 nm；The silicon wafer of Tubular PECVD device is placed on graphite boat, graphite boat
Piece is hollow out shape, and by stuck point, silicon wafer is fixed on hollowed out area by the modes such as card slot, so that silicon chip edge connects with graphite boat piece
Conductive effect is played in touching；For the silicon wafer placed in graphite boat piece and graphite boat piece as electrode, Tubular PECVD device inside is logical
Enter silane, H2Mixed gas forms plasma；
Front uses N-shaped amorphous silicon film layer or p-type amorphous silicon film layer in step 3)；
The back side uses p-type amorphous silicon film layer or N-shaped amorphous silicon film layer in step 4), and P-type non-crystalline silicon thicknesses of layers is 5-20 nm,
N-type amorphous silicon film layer is with a thickness of 5-20 nm；The amorphous silicon type of positive back side doping is in special-shaped symmetrical structure, i.e. N/P or P/N；
The positive backside deposition transparent conductive film in doped amorphous silicon surface in step 5), implementation are preferably magnetron sputtering or anti-
Plasma-deposited, one of depositional coating ITO, IWO, AZO are answered, positive back side film material is all Coating Materials of the same race, plated film
With a thickness of 60-120nm；
The metal electrode of step 6) is preferably silver electrode, and implementation is silk-screen printing, and silver electrode has main gate line, pair simultaneously
Grid line, main gate line and thin grid line vertical distribution, main gate line line number are 0-20, and main grid line width is 0-1.2mm, and secondary grid line line number is
80-200, secondary grid line width are 20-60 μm；
Step 7) solidification temperature is no more than 200 DEG C, and the sorting of process 8 is carried out under standard test condition.
The method of Tubular PECVD device double-sided deposition solar battery amorphous silicon layer of the present invention, is set using tubular type PECVD
It is standby, two-sided amorphous silicon plated film is carried out simultaneously to solar battery, PECVD pipe quantity can be reduced, reduce equipment cost, reduction is turned over
Piece process prevents silicon chip surface friction and pollution, improves non-passivation effect；Easy to operate, the consuming time is short, high-efficient, equipment
Cost, production cost investment are cheap, and production capacity is high, are conducive to hetero-junction solar cell product scale of mass production.
Specific mentality of designing:
The invention belongs to area of solar cell, a kind of heterojunction solar battery is provided using PECVD while depositing the positive back side
The technique of amorphous silicon film
With the development of solar battery technology, the exploitation of high-efficiency battery is got more and more attention.Wherein use intrinsic amorphous silicon layer (a-
Si:H (i)) passivation silicon substrate heterojunction solar cell (HJT battery) be one of research direction of emphasis.It is well known that silicon substrate is different
Matter connection solar cell not only has high transformation efficiency, high open-circuit voltage, but also has low temperature coefficient, without photo attenuation
(LID), without advantages [2] such as electroluminescent decaying (PID), low preparation process temperature.In addition silicon based hetero-junction battery is guaranteeing high turn
While changing efficiency, silicon wafer thickness can be thinned to 100 μm, effectively reduce silicon material consumption, and can be used to prepare flexible component.
For HJT battery, the key effect that amorphous silicon plays passivation, forms p-n junction, the conversion for HJT battery
Efficiency plays decisive role, and therefore, the excellent amorphous silicon membrane of processability is the key technology for obtaining efficient HJT battery.
HJT battery amorphous silicon deposition mainly has board-like PECVD, two kinds of equipment of Cat-CVD at present.
The main method of amorphous silicon deposition technique at present:
Board-like PECVD can only single sided deposition amorphous silicon film using top electrode or lower electrode
Flat support plate, coating single side, production capacity are small.
Equipment size is big, and factory service, automation are mating at high cost, takes up a large area.
Amorphous silicon filming equipment price height is the major influence factors for inhibiting hetero-junction solar cell product scale of mass production at present.
The present invention provides a kind of amorphous silicon double-sided coating for being suitable for solar cell surface passivation of tubular type PECVD deposition
Technique, problem to be solved are greatly to reduce equipment cost using tubular type PECVD, while two-sided amorphous silicon plated film can be reduced
PECVD pipe quantity reduces flaps process, improves amorphous silicon passivation effect.
By the above-mentioned HJT technological process of production, what the present invention provided a kind of tubular type PECVD deposition is suitable for solar battery
The amorphous silicon double-sided coating technique of surface passivation, problem to be solved are greatly to reduce equipment cost using tubular type PECVD,
Two-sided amorphous silicon plated film can reduce PECVD pipe quantity simultaneously, reduce silicon wafer flaps process, reduce silicon chip surface friction and pollution,
Greatly improve the passivation effect of amorphous silicon film layer.
Embodiment one:
Baseline: traditional conventional H JT battery making step are as follows:
A, to N-type with a thickness of 180 μm monocrystalline silicon piece carry out making herbs into wool processing, formed pyramid flannelette, remove foreign ion and into
Row surface cleaning；
B, positive intrinsic amorphous silicon layer, thickness 10nm are prepared by plasma activated chemical vapour deposition；
C, positive n-type doping amorphous silicon layer, thickness 10nm are prepared by plasma activated chemical vapour deposition；
D, back side intrinsic amorphous silicon layer, thickness 10nm are prepared by plasma activated chemical vapour deposition；
E, back side p-type doping amorphous silicon layer, thickness 10nm are prepared by plasma activated chemical vapour deposition；
F, ito thin film is deposited by magnetron sputtering, positive back side ito thin film is with a thickness of 100 nm；
G, positive back side silver metal electrodes are formed by silk-screen printing, main grid width is 1mm, and main grid number is 5, positive back silver pair grid
Line width is 40 μm, line number 100；
H, 200 DEG C of solidification temperature；
I, the electrical property of test battery is carried out, battery volume production average efficiency is 23.3%；
Embodiment of the embodiment of the present invention:
A, to N-type with a thickness of 180 μm monocrystalline silicon piece carry out making herbs into wool processing, formed pyramid flannelette, remove foreign ion and into
Row surface cleaning；
B, positive back side intrinsic amorphous silicon layer, thickness are prepared by the provided plasma activated chemical vapour deposition technique of this patent simultaneously
It is respectively 10nm；
C, positive n-type doping amorphous silicon layer, thickness 10nm are prepared by plasma activated chemical vapour deposition；
D, back side p-type doping amorphous silicon layer, thickness 10nm are prepared by plasma activated chemical vapour deposition；
E, ito thin film is deposited by magnetron sputtering, positive back side ito thin film is with a thickness of 100 nm；
F, positive back side silver metal electrodes are formed by silk-screen printing, main grid width is 1mm, and main grid number is 5, positive back silver pair grid
Line width is 40 μm, line number 100；
G, 200 DEG C of solidification temperature；
H, the electrical property of test battery is carried out, battery volume production average efficiency is 23.4%.
The electrical property of HJT battery is prepared according to the method described above, and transfer efficiency is able to ascend 0.1% or so compared with Baseline.
Claims (8)
1. a kind of method of Tubular PECVD device double-sided deposition solar battery amorphous silicon layer, it is characterised in that: including following step
It is rapid:
Silicon wafer cleans the texturing to form surface by chemicals；
Positive back side intrinsic amorphous silicon film layer is formed simultaneously in texturing silicon chip surface using Tubular PECVD device；
N-shaped or p-type doping amorphous silicon layer are formed in the intrinsic amorphous silicon film layer of front using Tubular PECVD device；
Using formation p-type or n-type doping amorphous silicon layer in Tubular PECVD device overleaf intrinsic amorphous silicon film layer；
The positive back side is formed on positive back side doped amorphous silicon film layer forms transparent conductive film layer；
Correcting back metal electrode is formed on positive backing transparent conductive film layer；
Curing metal electrode；
Testing, sorting.
2. the method for Tubular PECVD device double-sided deposition solar battery amorphous silicon layer, feature exist according to claim 1
In: the conduction type of silicon wafer is N-type in the step 1), and square monocrystalline silicon piece subject to shape, the thickness of monocrystalline silicon is preferably in 50-
200 μm, resistivity is 0.2-7 Ω cm；Middle texturing is constituted by way of alkali liquid corrosion, and flannelette size is preferably controlled in
1-10 μm, aqueous slkali preferred KOH or NaOH.
3. the method for Tubular PECVD device double-sided deposition solar battery amorphous silicon layer, feature exist according to claim 1
In: it is tubular type plasma enhanced chemical vapor that the positive back side of texturing silicon wafer, which forms the mode of intrinsic amorphous silicon film layer, in the step 2
Deposition, positive back side intrinsic amorphous silicon film layer is with a thickness of 5-20 nm；The silicon wafer of Tubular PECVD device is placed on graphite boat, graphite
Boat piece is hollow out shape, and by stuck point, silicon wafer is fixed on hollowed out area by the modes such as card slot, so that silicon chip edge and graphite boat piece
Conductive effect is played in contact；The silicon wafer placed in graphite boat piece and graphite boat piece is as electrode, inside Tubular PECVD device
It is passed through silane, H2Mixed gas forms plasma.
4. the method for Tubular PECVD device double-sided deposition solar battery amorphous silicon layer, feature exist according to claim 1
In: front uses N-shaped amorphous silicon film layer or p-type amorphous silicon film layer in the step 3).
5. the method for Tubular PECVD device double-sided deposition solar battery amorphous silicon layer, feature exist according to claim 1
In: the back side uses p-type amorphous silicon film layer or N-shaped amorphous silicon film layer in the step 4), and P-type non-crystalline silicon thicknesses of layers is 5-20
Nm, N-type amorphous silicon film layer is with a thickness of 5-20 nm；The amorphous silicon type of positive back side doping is in special-shaped symmetrical structure, i.e. N/P or P/
N。
6. the method for Tubular PECVD device double-sided deposition solar battery amorphous silicon layer, feature exist according to claim 1
In: the positive backside deposition transparent conductive film in doped amorphous silicon surface, implementation are preferably magnetron sputtering in the step 5)
Or reactive plasma deposition, one of depositional coating ITO, IWO, AZO, positive back side film material are all Coating Materials of the same race,
Coating film thickness is 60-120nm.
7. the method for Tubular PECVD device double-sided deposition solar battery amorphous silicon layer, feature exist according to claim 1
In: the metal electrode of the step 6) is preferably silver electrode, and implementation is silk-screen printing, and silver electrode has main grid simultaneously
Line, secondary grid line, main gate line and thin grid line vertical distribution, main gate line line number are 0-20, and main grid line width is 0-1.2mm, secondary grid line
Line number is 80-200, and secondary grid line width is 20-60 μm.
8. the method for Tubular PECVD device double-sided deposition solar battery amorphous silicon layer, feature exist according to claim 1
In: the step 7) solidification temperature is no more than 200 DEG C, and the sorting of process 8 is carried out under standard test condition.
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| CN111063612A (en) * | 2019-12-09 | 2020-04-24 | 通威太阳能(眉山)有限公司 | Coating process for improving intrinsic amorphous silicon passivation effect, passivation structure, heterojunction solar cell and preparation process |
| CN112466978A (en) * | 2020-11-12 | 2021-03-09 | 晋能光伏技术有限责任公司 | Battery structure of crystalline silicon/amorphous silicon heterojunction battery and preparation method thereof |
| CN114171624A (en) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | Heterojunction solar cell and manufacturing method thereof |
| CN114188444A (en) * | 2021-12-08 | 2022-03-15 | 晋能光伏技术有限责任公司 | Cleaning method and application of TCO film of heterojunction cell, cell piece and preparation method of heterojunction cell |
| WO2022142007A1 (en) * | 2020-12-28 | 2022-07-07 | 苏州腾晖光伏技术有限公司 | Efficient heterojunction battery structure and preparation method therefor |
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