CN111009590A - HJT solar cell and preparation method thereof - Google Patents
HJT solar cell and preparation method thereof Download PDFInfo
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- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910000085 borane Inorganic materials 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
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Abstract
The invention discloses an HJT solar cell and a preparation method thereof, which comprises the steps of surface treatment of an N-type monocrystalline silicon wafer, double-sided deposition of an amorphous silicon layer and TCO transparent conductive glass, electrode manufacturing, sintering and solidification, and is characterized in that: preparing an upper electrode and a lower electrode on the surface of TCO transparent conductive glass by a laser transfer method, comprising the following steps: loading the semi-finished product of the silicon wafer on which the TCO transparent conductive glass is deposited on a self-heating bearing table; and forming a transfer printing substrate above the bearing table and the silicon wafer semi-finished product, preparing a metal conductive material on the surface of the transfer printing substrate by adopting a coating method, and scanning and transferring the metal conductive material to the heated silicon wafer semi-finished product by utilizing a laser. By applying the preparation process disclosed by the invention, the non-contact electrode preparation is realized, and the subfissure and fragmentation rate of the silicon wafer are reduced; the method is favorable for optimizing the specification and size of the electrode, increasing light absorption and improving battery efficiency, improves the cleanliness of the silicon wafer, eliminates a pollution source, and is suitable for application of large-scale production.
Description
Technical Field
The invention relates to the field of solar cell production and manufacturing, in particular to an improved preparation method of an HJT solar cell and an HJT solar cell structure formed by an optimized process.
Background
The main targets of the current solar cell development are to reduce cost, improve photoelectric conversion efficiency and realize low-cost on-line power generation in the early days. The HJT solar cell has the characteristics of high efficiency, simple process, PID resistance, low temperature coefficient, high generating capacity, low light attenuation and the like, and the reliability and the stability of the photovoltaic module are improved. Hereinafter, the HJT solar cell and the HJT cell are simply referred to, and the actual meanings thereof are the same as those of the HJT solar cell. In addition, the HJT battery has a symmetrical structure, both sides can generate electricity, and the rate of both sides reaches more than 90%; compared with a single-sided solar cell, the single-sided solar cell can output at least 30-40% more power, so the HJT cell is regarded as the mainstream product of the next generation solar cell.
At present, the preparation and production cost of the HJT battery is higher, wherein the silicon wafer and the slurry account for more than 50% of the whole manufacturing cost. The gradual reduction of the thickness of the silicon wafer can reduce the manufacturing cost, but also puts new high-difficulty requirements on the production and the manufacture of the battery. Currently, there are two main methods for preparing electrodes of HJT solar cells: one is a screen printing mode; secondly, an electroplating mode is adopted; and are all contacted with the silicon wafer when preparing the electrodes. The thickness of the silicon wafer used by the HJT battery is generally 120-150 mu m, and the thickness of the silicon wafer is thinner and thinner in order to meet the requirements of further reducing the cost and manufacturing flexible components to expand the application market in the future. In the process of screen printing, certain pressure is generated on the silicon wafer due to contact with the silicon wafer, the silicon wafer is inevitably cracked or broken, the qualified rate of the battery piece is influenced, the manufacturing cost is increased invisibly, the width of a printed electrode is wide, the shading area is large, the light absorption capacity and the absorption capacity of the battery piece are reduced in the same ratio, and the conversion efficiency of the battery piece is further influenced; in another method for preparing the electrode by electroplating, a layer of mask needs to be formed on the surface of a silicon wafer firstly, then the electrode is prepared by electroplating, the mask needs to be removed by chemicals at the later stage, the generated waste liquid needs to be treated in a targeted manner, the whole electrode preparation process is complex, and the electrode preparation method is not environment-friendly.
It is obvious that the two electrode preparation methods and the manufacturing processes thereof do not conform to the development trend of the flat-price internet access in the photovoltaic industry, so that aiming at the problems existing in the HJT battery at present, the electrode preparation and research in the solar battery preparation are more reliable, the performance is excellent, and particularly, the improvement process capable of remarkably reducing the risk of silicon chip cracking or fragmentation is needed.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide an HJT solar cell and a preparation method thereof, and solves the problems that a silicon wafer is easy to crack and break and the cost is seriously wasted in the production process under the development trend of solar cell flaking.
One technical solution for achieving the above object of the present invention is an HJT solar cell, wherein a layered structure from one side surface to another side surface includes an upper electrode, TCO transparent conductive glass, a P-type amorphous silicon layer, an intrinsic amorphous silicon layer, an N-type single crystal silicon wafer, an intrinsic amorphous silicon layer, an N-type amorphous silicon layer, TCO transparent conductive glass, and a lower electrode, wherein the N-type single crystal silicon wafer has a thickness of 150 μm or less, and is characterized in that: the upper electrode and the lower electrode are both formed electrodes which are transferred on the TCO transparent conductive glass in a non-contact mode through laser.
In the HJT solar cell, the width of the main grid line of the transfer printing graph in laser transfer printing is 0.1-1.5 mm, the number of the main grid lines is 4-10, the widths of the auxiliary grid lines on the front surface and the back surface are 10-40 mu m, and the number of the auxiliary grid lines is 100-150.
The invention also provides a preparation method of the HJT solar cell, which comprises the following steps of surface treatment of an N-type monocrystalline silicon wafer, double-sided deposition of an amorphous silicon layer and TCO transparent conductive glass, electrode manufacturing, sintering and solidification, and is characterized in that: preparing an upper electrode and a lower electrode on the surface of TCO transparent conductive glass by a laser transfer method, comprising the following steps: loading the semi-finished product of the silicon wafer on which the TCO transparent conductive glass is deposited on a self-heating bearing table; and forming a transfer printing substrate above the bearing table and the silicon wafer semi-finished product, preparing a metal conductive material on the surface of the transfer printing substrate by adopting a coating method, and scanning and transferring the metal conductive material to the heated silicon wafer semi-finished product by utilizing a laser.
In the above method for preparing HJT solar cell, the laser used for scanning and transferring has a laser line diameter of 10 μm-20 μm and a laser pulse of 5 ns-20 ns.
In the preparation method of the HJT solar cell, the distance between the surface of the transfer printing substrate and the semi-finished silicon wafer is 20-50 microns.
In the above method for fabricating an HJT solar cell, the amorphous silicon layer is deposited by a plasma enhanced chemical vapor deposition method, and the process parameters include: silane flow rate of 300-500 sccm, borane flow rate of 500-1500 sccm, hydrogen flow rate of 800-2000 sccm, and power density of 200W/m2～1000W/m2The temperature is 150-250 ℃ and the pressure is 0.5-3 Mbar.
The preparation method of the HJT solar cell further comprises the steps that the thickness of the N-type monocrystalline silicon wafer is 130 micrometers, the thickness of the TCO transparent conductive glass is 110nm, the process parameter of laser scanning transfer printing is 10 ns-20 ns, the diameter of a laser line is 15 micrometers-20 micrometers, the distance from the surface of the transfer printing substrate to a semi-finished product of the silicon wafer is 20 micrometers-40 micrometers, the width of a main grid line of a transfer printing pattern in laser transfer printing is 1mm, the number of the main grid lines is 4, the width of a front side and a back side of a secondary grid line is 30 micrometers, and the number of the secondary grid lines is 108.
The preparation method of the HJT solar cell further comprises the steps that the thickness of the N-type monocrystalline silicon wafer is 100 micrometers, the thickness of the TCO transparent conductive glass is 80nm, the process parameter of laser scanning transfer printing is 5 ns-10 ns, the diameter of a laser line is 10 micrometers-15 micrometers, the distance from the surface of the transfer printing substrate to a semi-finished product of the silicon wafer is 30 micrometers-50 micrometers, the width of a main grid line of a transfer printing pattern in laser transfer printing is 0.8mm, the number of the main grid lines is 5, the width of a front side secondary grid line and the width of a back side secondary grid line are 15 micrometers, and the number of the secondary grid lines is 128.
The optimization and improvement of the preparation method of the HJT solar cell has prominent substantive characteristics and remarkable progress: the method realizes the non-contact electrode preparation, and reduces the subfissure and fragmentation rate of the silicon wafer; the method is favorable for optimizing the specification and size of the electrode, increasing light absorption and improving battery efficiency, improves the cleanliness of the silicon wafer, eliminates a pollution source, and is suitable for application of large-scale production.
Drawings
FIG. 1 is a schematic view of the layered structure of the HJT solar cell of the present invention.
FIG. 2 is a schematic diagram of the state of electrodes fabricated in the process of fabricating an HJT solar cell of the present invention.
Detailed Description
The following detailed description of the embodiments of the present invention is provided in connection with the accompanying drawings for the purpose of understanding and controlling the technical solutions of the present invention, so as to define the protection scope of the present invention more clearly.
With the continuous expansion and deepening of the application of the solar cell, as a long-term practitioner for the production and manufacturing of the solar cell, the designer of the invention aims at the current situation of the process of manufacturing the electrode on the surface of the silicon wafer generally or only by screen printing and electroplating in the preparation of the solar cell, and comprehensively analyzes the defects in various aspects in the conventional electrode manufacturing processes, but cannot improve the defects on the basis of the original technology and also becomes the hassle of the development trend of the thinning of the solar cell. The method for preparing the HJT solar cell is creatively provided by considering the inherent thought and the conventional practice of manufacturing the traditional electrode, so that the electrode is not contacted with a semi-finished product of a silicon wafer in the process of manufacturing the electrode, the external force pressure on the silicon wafer is avoided, and the scrapping loss cost in the production process is reduced.
Firstly, in view of the structure of the HJT solar cell of the present invention, the layered structure from one side to the other side includes an upper electrode 48, TCO transparent conductive glass 44, a P-type amorphous silicon layer 43, an intrinsic amorphous silicon layer 42, an N-type monocrystalline silicon wafer 41, an intrinsic amorphous silicon layer 45, an N-type amorphous silicon layer 46, TCO transparent conductive glass 47, and a lower electrode 9, wherein the thickness of the N-type monocrystalline silicon wafer 41 is about 120 μm to 150 μm, which will decrease with the trend of solar cell flaking. Although the main structure of the solar cell is basically consistent with that of the currently mainstream HJT solar cell in the market, as an innovative difference, the upper electrode 48 and the lower electrode 49 are both formed electrodes which are formed by non-contact laser transfer printing on TCO transparent conductive glass, namely, materials used as the electrodes are not in contact with a semi-finished silicon wafer before the electrodes are manufactured and completely formed, and the manufacturing shape and the size specification of the electrodes are highly adjustable based on the laser transfer printing. The width of a main grid line of a transfer printing graph in the laser transfer printing is 0.1-1.5 mm, the number of the main grid lines is 4-10, the width of auxiliary grid lines on the front surface and the back surface is 10-40 mu m, and the number of the auxiliary grid lines is 100-150. Therefore, the forming effect of the HJT solar cell is more beneficial to the light absorption and conversion efficiency of the finished solar cell.
Secondly, the outline steps of the preparation method for realizing the main purpose are as follows: the method comprises the steps of surface treatment of an N-type monocrystalline silicon wafer, double-sided deposition of an amorphous silicon layer and TCO transparent conductive glass, electrode manufacturing, sintering and solidification, and as the key points of technical improvement, an upper electrode and a lower electrode are prepared on the surface of the TCO transparent conductive glass through a laser transfer printing method. Therefore, the upper electrode and the lower electrode are manufactured by adopting a laser transfer printing technology, the upper electrode and the lower electrode do not need to be contacted with a silicon wafer semi-finished product in the manufacturing process, the fragment rate in the electrode manufacturing process of the solar cell is greatly reduced, the future development trend of silicon wafer flaking is met, meanwhile, the width and the height of the electrode can be accurately controlled, the shading area of the electrode is reduced, and the conversion efficiency of the cell is improved.
In view of the complete steps of the existing and improved preparation method, the method comprises the following steps: a) and the N-type monocrystalline silicon wafer is subjected to surface texture to form a pyramid shape, so that the surface reflection is reduced, and the surface is cleaned to remove impurities and metal ions. b) And preparing intrinsic amorphous silicon layers on the upper and lower surfaces by adopting a vapor deposition method, wherein the thickness is 5 nm-20 nm. c) And preparing an n-type amorphous silicon layer on the intrinsic amorphous silicon layer on the lower surface by using a vapor deposition method, wherein the thickness of the n-type amorphous silicon layer is 5 nm-20 nm. d) And similarly, preparing a p-type amorphous silicon layer on the intrinsic amorphous silicon layer on the upper surface by using a vapor deposition method, wherein the thickness of the p-type amorphous silicon layer is 5 nm-15 nm. e) And depositing TCO transparent conductive glass on the surface of the amorphous silicon layer by adopting a magnetron sputtering method, wherein the thickness is 60nm-120 nm. f) And preparing the upper and lower electrodes of the HJT solar cell by a laser transfer system, as can be seen from the schematic state diagram shown in fig. 2, the laser transfer system comprises a laser 1, a silicon wafer carrier 6 with a heating function, a transfer substrate 5 and a metal conductive composite material 3 to be transferred. The preparation method comprises the following steps of placing a semi-finished silicon wafer product in the silicon wafer bearing table, forming a transfer printing substrate above the bearing table 6 and the semi-finished silicon wafer product 4, preparing a metal conductive material 3 on the surface of the transfer printing substrate by adopting a coating method, and scanning and transferring the metal conductive composite material to be transferred printed on the surface of the transfer printing substrate by utilizing a linear light beam or Gaussian light beam 2 with high energy generated by a laser 1; after laser beam irradiation, the metal conductive material and the transfer printing substrate fall off, and finally the metal conductive material is transferred to the heated silicon wafer semi-finished product with a certain temperature. The reverse process is also true. The transfer printing material is a material which meets the requirements of light transmission, high temperature resistance, corrosion resistance and stable chemical property, the metal conductive material is arranged in a spaced mode relative to the semi-finished silicon wafer, the width of a main grid line of a transfer printing graph is 0.1-1.5 mm, the number of the main grid lines is 4-10, the width of auxiliary grid lines on the front side and the back side is 10-40 mu m, and the number of the auxiliary grid lines is 100-150. g) And finally, sintering and solidifying the upper electrode and the lower electrode formed on the silicon chip at a low temperature to form the complete HJT solar cell.
In the preparation method of the HJT solar cell, the laser is used for scanning and transferring laser lines emitted by the laser, the diameter of the laser lines is 10-20 mu m, and the laser pulse is 5-20 ns; the distance between the surface of the transfer printing substrate and the semi-finished product of the silicon wafer is 20-50 mu m.
Particularly, the amorphous silicon layer is deposited by using a plasma enhanced chemical vapor deposition method, and in order to achieve a better deposition effect, preferred process parameter ranges include: silane flow rate of 300-500 sccm, borane flow rate of 500-1500 sccm, hydrogen flow rate of 800-2000 sccm, and power density of 200W/m2～1000W/m2The temperature is 150-250 ℃ and the pressure is 0.5-3 Mbar.
The inventive step of the present invention will be understood from the following more detailed and practical examples of the manufacturing process.
In one embodiment, a complete manufacturing process includes: corroding an N-type monocrystalline silicon wafer with the thickness of 130 mu m by using an alkaline solution to form a pyramid on the surface of the N-type monocrystalline silicon wafer, and simultaneously cleaning the surface to remove impurities and metal ions, wherein the process temperature is 60-80 ℃, and the corrosion time is 10-20 min; preparing an intrinsic amorphous silicon layer and an N/P amorphous silicon layer on the upper surface and the lower surface of an N-type monocrystalline silicon piece respectively in sequence by adopting a plasma enhanced chemical vapor deposition method, wherein the thickness of each layer is set randomly within the range of 5 nm-20 nm, and the thickness of the P-type amorphous silicon layer is 5 nm-15 nm; depositing TCO transparent conductive glass on the upper surface and the lower surface by adopting a magnetron sputtering method, wherein the thickness is set randomly within the range of 60nm-120nm, and the selected position is 110 nm; preparing upper and lower electrodes of the HJT battery through a laser transfer printing system, wherein laser pulse: 10 ns-20 ns, the diameter of the laser line is 15 mu m-20 mu m, the distance from the surface of the transfer printing substrate to the semi-finished product of the silicon wafer is 20 mu m-40 mu m, the width of the main grid line in the transfer printing graph is 1mm, the number of the main grid lines is 4, the width of the auxiliary grid lines on the front surface and the back surface is 30 mu m, and the number of the auxiliary grid lines is 108; and finally, sintering and solidifying the upper electrode and the lower electrode formed on the silicon chip at a low temperature to form the complete HJT battery.
Example two, the complete manufacturing process includes: corroding an N-type monocrystalline silicon wafer with the thickness of 100 mu m by using an alkali solution to form a pyramid on the surface of the N-type monocrystalline silicon wafer, and simultaneously cleaning the surface to remove impurities and metal ions, wherein the process temperature is 60-80 ℃, and the corrosion time is 10-20 min; preparing an intrinsic amorphous silicon layer and an N/P amorphous silicon layer on the upper surface and the lower surface of an N-type monocrystalline silicon piece respectively in sequence by adopting a plasma enhanced chemical vapor deposition method, wherein the thickness of each layer is set randomly within the range of 5 nm-20 nm, and the thickness of the P-type amorphous silicon layer is 5 nm-15 nm; depositing TCO transparent conductive glass on the upper surface and the lower surface by adopting a magnetron sputtering method, wherein the thickness is set randomly within the range of 60nm-120nm, and the selected position is 80 nm; preparing upper and lower electrodes of the HJT battery through a laser transfer printing system, wherein laser pulse: 5 ns-10 ns, the diameter of the laser line is 10 mu m-15 mu m, the distance from the surface of the transfer printing substrate to the semi-finished product of the silicon wafer is 30 mu m-50 mu m, the width of the main grid line in the transfer printing graph is 0.8mm, the number of the main grid lines is 5, the width of the auxiliary grid lines on the front surface and the back surface is 15 mu m, and the number of the auxiliary grid lines is 128; and finally, sintering and solidifying the upper electrode and the lower electrode formed on the silicon chip at a low temperature to form the complete HJT battery.
The optimization and improvement of the preparation method of the HJT solar cell has prominent substantive characteristics and remarkable progress, and is described as follows one by one:
1) compared with the conventional screen printing technology, the method for preparing the HJT solar cell by adopting the laser transfer printing is a non-contact electrode preparation method, can be suitable for preparing electrodes by silicon wafers with different thicknesses, greatly reduces the hidden crack and fragment rate of the silicon wafers, improves the production qualification rate, and meets the development trend of cost reduction of the future photovoltaic industry.
2) Compared with contact type screen printing, the non-contact type electrode preparation method does not directly contact with the silicon wafer in the process, so that impurities and pollution sources can be reduced, the cleanliness of the silicon wafer is improved, and the qualification rate and the conversion efficiency of the battery are improved.
3) By adopting the laser transfer printing technology, the shape of the electrode, such as the width and the height, can be accurately controlled by adjusting the technological parameters of the laser, the material and the thickness of a transfer printing substrate and the like; the light-shielding area of the electrode can be reduced, and the light absorption can be increased, thereby improving the efficiency of the cell.
4) The shape of the electrode is accurately controlled by the laser transfer printing technology, so that the metal conductive transfer printing material can be effectively utilized, the utilization rate of the transfer printing material is improved, and the manufacturing cost is reduced;
although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the specific embodiments, and modifications and equivalents within the scope of the claims may be made by those skilled in the art and are included in the scope of the present invention.
Claims (8)
1. A layered structure from one side surface to the other side surface of an HJT solar cell comprises an upper electrode, TCO transparent conductive glass, a P-type amorphous silicon layer, an intrinsic amorphous silicon layer, an N-type monocrystalline silicon piece, an intrinsic amorphous silicon layer, an N-type amorphous silicon layer, TCO transparent conductive glass and a lower electrode, wherein the thickness of the N-type monocrystalline silicon piece is less than 150 mu m, and the HJT solar cell is characterized in that: the upper electrode and the lower electrode are both formed electrodes which are transferred on the TCO transparent conductive glass in a non-contact mode through laser.
2. The HJT solar cell of claim 1, wherein: the width of a main grid line of a transfer printing graph in laser transfer printing is 0.1-1.5 mm, the number of the main grid lines is 4-10, the width of auxiliary grid lines on the front surface and the back surface is 10-40 mu m, and the number of the auxiliary grid lines is 100-150.
3. A preparation method of an HJT solar cell comprises the steps of N-type monocrystalline silicon wafer surface treatment, double-sided deposition of an amorphous silicon layer and TCO transparent conductive glass, electrode manufacturing, sintering and solidification, and is characterized in that: preparing an upper electrode and a lower electrode on the surface of TCO transparent conductive glass by a laser transfer method, comprising the following steps: loading the semi-finished product of the silicon wafer on which the TCO transparent conductive glass is deposited on a self-heating bearing table; and forming a transfer printing substrate above the bearing table and the silicon wafer semi-finished product, preparing a metal conductive material on the surface of the transfer printing substrate by adopting a coating method, and scanning and transferring the metal conductive material to the heated silicon wafer semi-finished product by utilizing a laser.
4. The method of claim 3, wherein the HJT solar cell is prepared by: the laser line diameter emitted by the laser used for scanning and transferring is between 10 and 20 mu m, and the laser pulse is between 5 and 20 ns.
5. The method of claim 3, wherein the HJT solar cell is prepared by: the distance between the surface of the transfer printing substrate and the semi-finished product of the silicon wafer is 20-50 mu m.
6. The method of claim 3, wherein the HJT solar cell is prepared by: the amorphous silicon layer is deposited by adopting a plasma enhanced chemical vapor deposition method, and the process parameter range comprises the following steps: silane flow rate of 300-500 sccm, borane flow rate of 500-1500 sccm, hydrogen flow rate of 800-2000 sccm, and power density of 200W/m2～1000W/m2The temperature is 150-250 ℃ and the pressure is 0.5-3 Mbar.
7. The method of claim 3, wherein the HJT solar cell is prepared by: the thickness of the N-type monocrystalline silicon wafer is 130 micrometers, the thickness of the TCO transparent conductive glass is 110nm, the technological parameters of scanning and transfer printing by utilizing a laser are 10 ns-20 ns of laser pulse, the diameter of a laser line is 15 micrometers-20 micrometers, the distance from the surface of a transfer printing substrate to a semi-finished product of the silicon wafer is 20 micrometers-40 micrometers, the width of a main grid line of a transfer printing pattern in laser transfer printing is 1mm, the number of the main grid lines is 4, the width of auxiliary grid lines on the front surface and the back surface is 30 micrometers, and the number of the auxiliary grid lines is 108.
8. The method of claim 3, wherein the HJT solar cell is prepared by: the thickness of the N-type monocrystalline silicon wafer is 100 micrometers, the thickness of the TCO transparent conductive glass is 80nm, the technological parameters of scanning and transfer printing by utilizing a laser are 5 ns-10 ns of laser pulse, the diameter of a laser line is 10 micrometers-15 micrometers, the distance from the surface of a transfer printing substrate to a semi-finished product of the silicon wafer is 30 micrometers-50 micrometers, the width of a main grid line of a transfer printing pattern in laser transfer printing is 0.8mm, the number of the main grid lines is 5, the width of auxiliary grid lines on the front surface and the back surface is 15 micrometers, and the number of the auxiliary grid lines is 128.
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