CN104164661A - In-line type multicavity laminated parallel processing vacuum equipment and use method thereof - Google Patents
In-line type multicavity laminated parallel processing vacuum equipment and use method thereof Download PDFInfo
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- CN104164661A CN104164661A CN201310180903.8A CN201310180903A CN104164661A CN 104164661 A CN104164661 A CN 104164661A CN 201310180903 A CN201310180903 A CN 201310180903A CN 104164661 A CN104164661 A CN 104164661A
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Abstract
The invention relates to in-line type multicavity laminated parallel processing vacuum equipment, which includes: a sheet feed chamber, a reaction chamber and a sheet discharge chamber that are connected in order linearly. The equipment is characterized in that: a first transmission unit and a second transmission unit for substrate transmission are respectively disposed in the sheet feed chamber and the sheet discharge chamber. At least two sub-reaction chambers for preparation a needed film are vertically stacked inside the reaction chamber, and each of the sub-reaction chambers is provided with an open-close device respectively on a side facing the sheet feed chamber and on a side facing the sheet discharge chamber. The equipment can reduce the number of substrate carrying times, and improve the equipment productivity and production efficiency.
Description
technical field:
The present invention relates to a kind of solar cell and flat pannel display and manufacture a kind of vacuum film formation equipment in field, relate in particular to a kind of vacuum apparatus and using method thereof of straight-line type multi-cavity lamination parallel processing.
Definition: the process time of indication refers to the treatment time of substrate in reaction chamber herein.
Technical background
In solar cell and flat pannel display manufacture field, chemical vapour deposition (PECVD) technology that plasma strengthens is a kind of modal silicon deposited film technology, it is a kind of under lower pressure, utilize electromagnetic field to produce electric discharge, by electronic impact, make to pass into decomposing gas and become highly active particle, thereby at substrate surface generation chemical reaction and the method for deposit film.PECVD technology can be used for preparing the films such as non-crystalline silicon, microcrystal silicon, SiGe, silicon nitride, silicon oxide, silicon oxynitride, and it is in the association areas such as laminated-silicon thin film battery, silicon based hetero-junction battery, OLED extensive application all.
In general, PECVD equipment has two kinds of common structures: a kind of be cluster formula device structure as shown in Chinese patent CN202246859U, another kind is straight-line type device structure, as shown in Chinese patent CN202307808U.In actual large-scale commercial production, in order to increase production capacity and to save cost, people adopt cluster formula structure more and it are updated, such as the quantity (as hung cavity 3-8) of increase equipment cavity that periphery is hung or by a plurality of reaction cavity in the vertical directions stacking (2-10), all obtained the effect of good raising throughput, for example, in Chinese patent CN202246859U, as depicted in figs. 1 and 2, the vacuum flush system 1 of this cluster formula comprised transmission cavity 11 and be star-like be arranged on transmission cavity around add sheet slice chamber 12 and three reaction chambers 13, and the sub-reaction chamber 231 that includes vertical stacking in reaction chamber 13.
Yet, the laminating apparatus structure of this cluster formula is only suitable for growing the film deposition process of (being greater than 10 minutes) in the process time in practice, this be because: in PECVD equipment, the transmission of substrate realizes by mechanical manipulator, because current popular flat pannel display the 5th generation substrate has the feature of larger area and heavier quality, so the transporting velocity of mechanical manipulator can not be too fast, otherwise very easily cause shake, cause and even can in handling process, produce fragment to the location of substrate is inaccurate, simultaneously, for the manufacturers of mechanical manipulator, Manipulator Transportation speed means the performance requriements of mechanical manipulator higher sooner, correspondingly increased the manufacturing cost of mechanical manipulator.
Consider above-mentioned reason, conventionally industrially for substrate area, be greater than 0.6m
2the PECVD system of rhythmo structure in the mechanical manipulator that adopts, its every action time is once about 10-20 second.Like this for the PECVD equipment of cluster formula structure, because mechanical manipulator is arranged in the transmission cavity of equipment central authorities, so for this equipment PECVD film process each time, mechanical manipulator need to move altogether 10 times in this equipment, and its detailed process is: the Arm expanding in (1) transmission cavity captures substrate to entering preparation in sheet chamber; (2) mechanical manipulator is retracted to transmission cavity from entering sheet chamber after capturing substrate; (3) mechanical manipulator rotates to an angle in transmission cavity, and making it is the direction in the face of reaction chamber from facing into the direction rotation in sheet chamber; (4) mechanical manipulator in transmission cavity carries substrate and is sent into reaction chamber; (5) after mechanical manipulator is put into reaction chamber by substrate, mechanical manipulator is withdrawn into transmission cavity from reaction chamber, and substrate is prepared deposit film in reaction chamber; (6) after the thin film deposition in reaction chamber finishes, mechanical manipulator stretches into reaction chamber from transmission cavity again; (7) mechanical manipulator is transported to it transmission cavity from reaction chamber after capturing substrate again; (8) mechanical manipulator rotates to an angle in transmission cavity, and making it is the direction of facing into sheet chamber from facing reaction chamber direction rotation; (9) mechanical manipulator is transported to substrate in slice chamber from transmission cavity; (10) mechanical manipulator is put into substrate behind slice chamber, and mechanical manipulator is retracted to transmission cavity from slice chamber again.Visible, corresponding to the film process of PECVD each time in this PECVD equipment, the mechanical manipulator in transmission cavity has to move 10 times, if the every motion of mechanical manipulator once 15 seconds consuming time, often complete PECVD film process one time, the run duration of mechanical manipulator will reach 150 seconds.This is for longer process of some film-forming process time, the process time of for example preparing amorphous silicon membrane or microcrystalline silicon film in amorphous or microcrystalline film solar cell is generally 5-30 divides, and now in cluster formula PECVD system, the run duration of mechanical manipulator is suitable with respect to the film-forming process time in reaction chamber.But for shorter process of some film-forming process time, the process time of for example preparing silicon based hetero-junction solar cell is less than 3 minutes conventionally, the 150 second time of now mechanical manipulator bearing substrate motion will become the bottleneck that affects PECVD equipment capacity undoubtedly, and how overcoming this problem just becomes current problem demanding prompt solution.
Summary of the invention
In order to address the above problem, the invention provides a kind of vacuum apparatus of straight-line type multi-cavity lamination parallel processing, by stacking a plurality of sub-reaction chamber vertically in the vacuum apparatus reaction chamber in straight-line type, the first transmission unit and the second transmission unit are set respectively in entering sheet chamber and slice chamber, and in sub-reaction chamber both sides, closing device is set respectively, can reduce the number of times of Manipulator Transportation substrate, thereby production capacity and the production efficiency of equipment have been improved, and the device structure of multi-cavity lamination parallel processing also can disposablely complete multi-piece substrate film forming, thereby further improve equipment capacity, the intensive degree of reinforcement equipment and reduction device fabrication cost.
In order to reach above object, the invention provides a kind of straight-line type multi-cavity lamination parallel processing vacuum apparatus, comprise: linearly formula connects successively enters sheet chamber, reaction chamber and slice chamber, it is characterized in that: described in enter in sheet chamber and slice chamber, to be respectively arranged with the first transmission unit and the second transmission unit for board transport, the inner vertical stacking of described reaction chamber is provided with number and is no less than the sub-reaction chamber of 2 for the preparation of required film, and described each sub-reaction chamber enters a side in sheet chamber and is respectively arranged with closing device in the face of the side in described slice chamber described in facing.
Alternatively, described in enter between sheet chamber, reaction chamber and slice chamber, to rely on the family of power and influence to realize can to isolate connection, the closing device that described each sub-reaction chamber both sides arrange is single or double acting door.
Alternatively, the closing device arranging in described same sub-reaction chamber both sides can be realized and open simultaneously or close simultaneously.
Alternatively, described in, entering the first transmission unit and the second transmission unit that in sheet chamber and slice chamber, arrange can be mechanical manipulator or roller devices.
Alternatively, in described reaction chamber, the number range of the described sub-reaction chamber of vertical stacking setting is 2-20.
Alternatively, described in enter the substrate holder that is provided with vertical stacking in sheet chamber and slice chamber, described substrate holder position is corresponding with described sub-reaction chamber position.
Alternatively, the number of described reaction cavity can be one or mutual several that connect successively, and its quantitative range is 1-5.
Alternatively, in described sub-reaction chamber, by chemical gaseous phase depositing process, on substrate, prepare film.
Alternatively, the chemical gaseous phase depositing process strengthening by plasma in described sub-reaction chamber is prepared film on substrate.
Alternatively, the substrate area that described vacuum apparatus is processed is greater than 0.6m
2.
Alternatively, described the first transmission unit and the every action of the second transmission unit required transfer time scope is once 5-30 second in 10 minutes the process time of substrate film forming in described sub-reaction chamber.
Alternatively, described a plurality of sub-reaction chamber can share one or more airing system or vacuum system.
Alternatively, described reaction chamber with on entering the sidewall that sheet chamber or slice chamber be connected be not provided with one or some maintenance windows, described sub-reaction chamber, corresponding to size and the position of described sub-reaction chamber, is taken out in its size and position during for maintenance of the equipment.
Alternatively, described vacuum apparatus is silicon based hetero-junction manufacture of solar cells equipment, for the production of silicon based hetero-junction solar cell.
The present invention also provides the using method of above-mentioned straight-line type multi-cavity lamination parallel processing vacuum apparatus, comprising:
Step S1, after the film-forming process in described sub-reaction chamber on substrate completes, the closing device of described sub-reaction chamber both sides is opened simultaneously;
Step S2, the second transmission unit in described slice chamber transfers to substrate in described slice chamber from described sub-reaction chamber, and meanwhile, described in enter the first transmission unit in sheet chamber substrate entered sheet chamber to transfer in described sub-reaction chamber from described.
Step S3, the closing device of closing described sub-reaction chamber both sides, makes, in described sub-reaction chamber, chemical vapour deposition reaction occurs and prepares required film.During this period, the Handling device outside described vacuum apparatus takes out the processed substrate in slice chamber, and another Handling device outside described vacuum apparatus enters sheet chamber described in pending substrate is put into.
Compared with prior art, the present invention has following technique effect:
1) the vacuum apparatus topological design by straight-line type and face the closing device that opening and closing are simultaneously set respectively into the both sides in sheet chamber and slice chamber at sub-reaction chamber, when can realize substrate in sub-reaction chamber after can making film preparation in equipment complete, enter sheet and slice process, and this structure has also been avoided the spinning movement of mechanical manipulator in Cluster Structures equipment, thereby make straight-line type vacuum apparatus the first transmission unit and second transmission unit in a film forming period altogether only need to expend the time of 3 actions, greatly reduced the carrying number of times of substrate, also correspondingly reduced the waiting time of substrate in reaction chamber, thereby the transmission time that makes substrate in vacuum apparatus no longer becomes the bottleneck of its work, therefore production capacity and the production efficiency of equipment have been improved.
2) by the method for stacking a plurality of sub-reaction chambers vertically in the reaction chamber of this vacuum apparatus, can make a plurality of sub-reaction cavity parallel processing film deposition processes, it is the disposable overlay film that completes multi-piece substrate, the space of greatly improved the intensive degree of equipment capacity and equipment, having reduced device layout, has reduced the production cost of equipment.Particularly a plurality of sub-reaction chamber in reaction chamber can share an air feeder and vacuum system, thus the manufacturing cost of further having saved equipment.
3) on the sidewall of described vacuum apparatus, be provided with maintenance window, maintenance personnel can only need open maintenance window when equipment failure occurring and need to safeguard, to in described sub-reaction chamber slave unit, take out, without to reaction chamber or enter sheet chamber or slice chamber is removed and assembled, time saving and energy saving.On the other hand, in reaction chamber, only have a sub-reaction chamber to break down while needing repairing, can change in time another standby sub-reaction chamber, shorten the servicing time of equipment, thereby improved the service efficiency of this equipment.
4) this double-cavity structure that sub-reaction chamber is set in reaction chamber, can guarantee the generation temperature uniformity of chemical vapour deposition reaction and the stability of film forming environment in sub-reaction chamber, thereby improve quality of forming film.
5) in possibility, can be for a plurality of at the reaction chamber entering between sheet chamber and slice chamber, to carry out different coating techniques, like this can be so that substrate just completes the different films of required preparation in a vacuum system, avoided crossed contamination, and this scheme only need utilize a set of vacuum apparatus can complete all required film-forming process, can reduce R&D costs.
Accompanying drawing explanation
Fig. 1 is the structural representation of cluster formula vacuum apparatus in prior art.
Fig. 2 is that the cluster formula equipment shown in Fig. 1 is along the cross-sectional view of III-III line.
Fig. 3 is the structural representation of straight-line type vacuum apparatus in the present invention.
Fig. 4 enters sheet chamber internal structure schematic diagram in the present invention.
Fig. 5 is slice chamber internal structure schematic diagram in the present invention.
Fig. 6 is the structural representation of reaction chamber inside in the present invention
Fig. 7 is the schematic diagram of the maintenance window that in the present invention, reaction chamber arranges.
Fig. 8 is the using method schema of straight-line type multi-cavity lamination parallel processing vacuum apparatus of the present invention
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Set forth in the following description a lot of details so that fully understand the present invention, but the present invention can also adopt other to be different from additive method described here, implement, so the present invention has not been subject to the restriction of following public specific embodiment.
As described in background technology, in industrial production in conventional cluster formula vacuum apparatus, because mechanical manipulator is arranged in the transmission cavity of cluster formula equipment central authorities, so corresponding to the film process each time in this PECVD equipment, mechanical manipulator in transmission cavity has to move 10 times, this for some film-forming process time compared with for short chemical vapor deposition processes, the process time of for example preparing silicon based hetero-junction solar cell is generally the situation that is less than 3 minutes, the substrate that completes coating technique can only continue to wait for completing of Manipulator Transportation action in reaction chamber, therefore reduced the utilising efficiency of equipment, the board carrying overlong time of visible mechanical manipulator has become the bottleneck that restriction vacuum apparatus production efficiency improves, be unfavorable for the increase of production capacity in industrial mass production.
The invention provides a kind of vacuum apparatus of straight-line type multi-cavity lamination parallel processing, by stacking a plurality of sub-reaction chamber vertically in the vacuum apparatus reaction chamber in straight-line type, the first transmission unit and the second transmission unit are set respectively in entering sheet chamber and slice chamber, and in sub-reaction chamber both sides, closing device is set respectively, the number of times of Manipulator Transportation substrate be can reduce, thereby production capacity and the production efficiency of equipment improved.
Below in conjunction with accompanying drawing, the layout of vacuum apparatus of the present invention and framework and using method thereof are described in detail.
Fig. 3 shows according to the schematic layout pattern of the straight-line type vacuum apparatus of a specific embodiment of the present invention.Described vacuum apparatus 1 can be the vacuum apparatus that carries out chemical vapour deposition reaction, as is typically chemical vapour deposition (PECVD) vacuum apparatus that plasma body strengthens, and the substrate that described vacuum apparatus is processed can be for being greater than 0.6m
2the large-size substrate of area, as can process flat pannel display 1.1m*1.3m the 5th generation substrate, described substrate can be glass substrate, graphite substrate, metal substrate or ceramic substrate etc.PECVD equipment 1 in Fig. 3 comprise be arranged in a linear successively enter sheet chamber 10, reaction chamber 20 and slice chamber 30, between described each cavity, rely on family of power and influence's (not shown) to realize isolable connection.Fig. 4 and Fig. 5 are respectively the internal structure schematic diagram in sheet chamber and slice chamber that enters in Fig. 3 vacuum apparatus, in Fig. 4 and Fig. 5, shown in described in enter in sheet chamber 10 and slice chamber 30 to be respectively arranged with the first transmission unit 101 and the second transmission unit 301, the every action of described the first and second transmission unit needed transfer time scope is once 5-30 second.Particularly, described the first and second transmission units can or be roller devices for mechanical manipulator, and preferably, described the first and second transmission units are mechanical manipulator.Described the first transmission unit 101 is for pending substrate is entered to sheet chamber 10 and reaches in described reaction chamber 20 from described, and described the second transmission unit 301 is for reaching processed substrate in described slice chamber 30 from described reaction chamber 20.What Fig. 6 showed is the internal structure schematic diagram of reaction chamber 30 in Fig. 3 vacuum apparatus, the inside of described reaction chamber 20 includes the sub-reaction chamber 201 that number is no less than 2, described each sub-reaction chamber 201 in the vertical direction stacked arrangement, so that a plurality of sub-reaction chamber 201 can parallel processing film deposition process.Particularly, the number of described sub-reaction cavity can, for 2-20, include 3 sub-reaction chambers 201 in reaction chamber described in the present embodiment.Described each sub-reaction chamber 201 can share one or more airing system or vacuum system.Described each sub-reaction chamber 201 enters a side in sheet chamber and is respectively arranged with closing device 202 in the face of the side in described slice chamber described in facing, so that the first transmission unit 101 and the second transmission unit 301 in slice chamber 30 that enter in sheet chamber 10 can pass in and out inside and outside described sub-reaction chamber 201, and the closing device 202 of same sub-reaction chamber both sides can be realized and open simultaneously or close simultaneously, preferably, the single or double acting door of described closing device 202 for can open or close simultaneously.Correspondingly, the family of power and influence who plays buffer action between described each cavity also can with the together opening and closing of described closing device 202.In addition, because each the sub-reaction chamber 201 in described reaction chamber 20 is a plurality of and vertical stacking setting, corresponding, described enter sheet chamber 10 with in slice chamber 30, also should have with each sub-reaction chamber 201 positions corresponding can multilayer vertical stacking substrate holder so that described the first transmission unit 101 and the second transmission unit 301 can once capture multi-piece substrate and this multi-piece substrate imported into or spread out of described reaction chamber 20 simultaneously.Particularly, described in, enter the number of sheet chamber 10 and the substrate holder of described slice chamber 30 interior settings can be with the number of described sub-reaction chamber 201 identical or be its multiple.
In possibility, described reaction chamber 20 with on entering the sidewall that sheet chamber 10 or slice chamber 30 be connected can also not be provided with one or some maintenance window 203, as shown in Figure 7, described sub-reaction chamber, corresponding to size and the position of described sub-reaction chamber, is taken out in its size and position during for maintenance of the equipment.When described maintenance window 203 is one, as shown in Figure 7 (a), its size and position are corresponding to integral body size and the integral position of whole sub-reaction chambers; When described maintenance window 203 is while being a plurality of, as shown in Figure 7 (b) shows, wherein the size of a certain maintenance window and position can be corresponding to one of them or a plurality of sub-reaction chamber size and positions.
In possibility, the number of described reaction chamber 20 can be one or mutual several that connect successively, its quantitative range is 1-5, variant reaction chamber can be respectively used to deposit different thin-film techniques, preferably, the number of reaction chamber 20 is 3, is used for respectively P layer, I layer or the N layer of deposition of amorphous silicon films.
Straight-line type multi-cavity lamination parallel processing vacuum apparatus provided by the present invention is suitable for utilizing chemical gaseous phase depositing process to prepare required film, preferably, adopts PECVD method to prepare required film.Utilize film-forming process time that described vacuum apparatus carries out conventionally in 10 minutes, particularly, described vacuum apparatus can be for silicon based hetero-junction manufacture of solar cells equipment, for the production of silicon based hetero-junction solar cell.
For the multi-cavity lamination parallel processing vacuum apparatus of disclosed this straight-line type, Figure 8 shows that the using method schema of this equipment, it uses step as follows:
Step S1, after the film-forming process in described sub-reaction chamber on substrate completes, the closing device of described sub-reaction chamber both sides is opened simultaneously;
Step S2, the second transmission unit in described slice chamber transfers to substrate in described slice chamber from described sub-reaction chamber, and meanwhile, described in enter the first transmission unit in sheet chamber substrate entered sheet chamber to transfer in described sub-reaction chamber from described;
Step S3, the closing device of closing described sub-reaction chamber both sides, makes, in described sub-reaction chamber, chemical vapour deposition reaction occurs and prepares required film.During this period, the Handling device outside described vacuum apparatus takes out the processed substrate in slice chamber, and another Handling device outside described vacuum apparatus enters sheet chamber described in pending substrate is put into.
For this step, be elaborated below.
For step S1, film-forming process in described sub-reaction chamber can be shorter for the process time, for example be less than the film-forming process of 10 minutes, preferably, can carry out the amorphous silicon membrane technique in silicon based hetero-junction solar cell, the thickness of the amorphous silicon membrane in silicon based hetero-junction solar cell only has nanometer scale, and its corresponding film-forming process is generally the PECVD film-forming process of 2-3 minute, and described sub-reaction chamber can be used for preparing intrinsic layer, P layer or the N layer of described amorphous silicon membrane.When completing after the preparation of required film in described sub-reaction chamber, the closing device of described sub-reaction chamber both sides will open to prepare to carry out board transport simultaneously, similarly, the family of power and influence who plays buffer action between described each cavity also can together open with described closing device 202;
For step S2, when described closing device 202 is all opened with the described family of power and influence, transmission Unit 301, in described slice chamber second transfer to substrate in described slice chamber 30 from described sub-reaction chamber 201, and meanwhile,, entering the first transmission unit 101 in sheet chamber 10 enters substrate sheet chamber 10 to transfer in described sub-reaction chamber 20 from described.
Preferably, described the first transmission unit 101 and the second transmission unit 301 are robot device, aforementionedly processed substrate is taken out from sub-reaction chamber and pending substrate is put into the process of sub-reaction chamber and can be decomposed into following subprocess:
The first step, the second mechanical 301 hands in described slice chamber 30 first extend in described sub-reaction chamber 201 from described slice chamber 30, and these process second mechanical manipulator 301 actions are once;
Second step, described the second mechanical manipulator 301 is retracted in described slice chamber after sub-reaction chamber captures substrate from sub-reaction chamber, simultaneously, described the first mechanical manipulator 101 entering in sheet chamber is carrying pending substrate and from enter sheet chamber, is stretching in described sub-reaction chamber, and all action is simultaneously once for this process first mechanical manipulator 101 and the second mechanical manipulator 301;
The 3rd step, enters in sheet chamber described in described the first mechanical manipulator 101 is retracted to again after substrate being put down in sub-reaction chamber from sub-reaction chamber, and this process first manipulator behavior 101 once.
This shows, in time sequence, aforementioned three steps have been equivalent to expend 3 opening times of mechanical manipulator.Known according to background technology part, the time that the mechanical manipulator of common industrial employing often completes one-off is about 10-20 second, if we suppose the every motion of mechanical manipulator once 15 seconds consuming time, at the equipment of PECVD described in specific embodiment, often carry out in the cycle of one-pass film-forming, be approximately 45 seconds the opening time of mechanical manipulator.
For step S3, after new pending substrate imports in group reaction chamber, close the closing device of its both sides and the isolation family of power and influence between each cavity, make chemical vapour deposition reaction to occur to prepare required film in described sub-reaction chamber.During this period, the Handling device outside described vacuum apparatus takes out the processed substrate in slice chamber, and another Handling device outside described vacuum apparatus enters sheet chamber described in pending substrate is put into.
In the present embodiment, by the vacuum apparatus topological design of straight-line type and face into the two ends in sheet chamber and slice chamber closing device is set respectively at sub-reaction chamber, can after film forming completes, realize the slice of substrate in sub-reaction chamber simultaneously and enter sheet process, due to the vacuum of this straight-line type, there is not the individual transmission chamber of Cluster Structures equipment simultaneously, can avoid the spinning movement of mechanical manipulator in transmission cavity, and by the time decreased that often completes 10 Manipulator Transportations that a film forming period just has to carry out in Cluster Structures equipment to 3 handling times in the present embodiment, greatly reduced the carrying number of times of substrate, also correspondingly reduced the waiting time of substrate in reaction chamber, thereby overcome in prior art board transport overlong time to the restriction of enhancing production capacities, production capacity and the production efficiency of this vacuum apparatus have been improved.
In the present embodiment, by the way of stacking a plurality of sub-reaction chambers vertically in the reaction chamber of this vacuum apparatus, can disposablely complete multi-piece substrate film forming, greatly improve the intensive degree of equipment capacity and equipment, reduced arrangement space, reduce device fabrication cost.Particularly a plurality of sub-reaction chamber in reaction chamber can share an air feeder and vacuum system, the manufacturing cost of further having saved equipment.In addition, this " dual cavity " structure that sub-reaction chamber forms is set in reaction chamber inside, can guarantees the generation temperature uniformity of chemical vapour deposition reaction and the stability of film forming environment in sub-reaction chamber, thereby improve quality of forming film.
In possibility, on the sidewall of described vacuum apparatus, be provided with maintenance window, maintenance personnel can only need open maintenance window when equipment failure occurring and need to safeguard, to in described sub-reaction chamber slave unit, take out, without to reaction chamber or enter sheet chamber or slice chamber is removed and assembled, time saving and energy saving.On the other hand, in reaction chamber, only have a sub-reaction chamber to break down while needing repairing, can change in time another standby sub-reaction chamber, shorten the servicing time of equipment, thereby improved the service efficiency of this equipment.
In possibility, at the reaction chamber entering between sheet chamber and slice chamber, can, for a plurality of, to carry out different coating techniques, can, so that substrate just completes the different films of required preparation in a vacuum system, avoid crossed contamination like this.Meanwhile, only need utilize a set of vacuum apparatus can complete all required film-forming process, can reduce R&D costs.
Although this law is bright, with preferred embodiment, disclose as above, the present invention is not defined in this.Any those skilled in the art, within not departing from the bright spirit and scope of this law, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with claim limited range.
Claims (15)
1. a straight-line type multi-cavity lamination parallel processing vacuum apparatus, comprise: linearly formula connects successively enters sheet chamber, reaction chamber and slice chamber, it is characterized in that: described in enter in sheet chamber and slice chamber, to be respectively arranged with the first transmission unit and the second transmission unit for board transport, the inner vertical stacking of described reaction chamber is provided with number and is no less than the sub-reaction chamber of 2 for the preparation of required film, and described each sub-reaction chamber enters a side in sheet chamber and is respectively arranged with closing device in the face of the side in described slice chamber described in facing.
2. straight-line type multi-cavity lamination parallel processing vacuum apparatus according to claim 1, is characterized in that: described in enter between sheet chamber, reaction chamber and slice chamber, to rely on the family of power and influence to realize can to isolate connection, the closing device that described each sub-reaction chamber both sides arrange is single or double acting door.
3. straight-line type multi-cavity lamination parallel processing vacuum apparatus according to claim 1, is characterized in that: the closing device arranging in described same sub-reaction chamber both sides can be realized and open simultaneously or close simultaneously.
4. straight-line type multi-cavity lamination parallel processing vacuum apparatus according to claim 1, is characterized in that: described in to enter the first transmission unit and the second transmission unit that in sheet chamber and slice chamber, arrange can be mechanical manipulator or roller devices.
5. straight-line type multi-cavity lamination parallel processing vacuum apparatus according to claim 1, is characterized in that: in described reaction chamber, the number range of the described sub-reaction chamber of vertical stacking setting is 2-20.
6. straight-line type multi-cavity lamination parallel processing vacuum apparatus according to claim 1, is characterized in that: described in enter the substrate holder that is provided with vertical stacking in sheet chamber and slice chamber, described substrate holder position is corresponding with described sub-reaction chamber position.
7. straight-line type multi-cavity lamination parallel processing vacuum apparatus according to claim 1, is characterized in that: the number of described reaction cavity can be one or mutual several that connect successively, and its quantitative range is 1-5.
8. straight-line type multi-cavity lamination parallel processing vacuum apparatus according to claim 1, is characterized in that: in described sub-reaction chamber, by chemical gaseous phase depositing process, on substrate, prepare film.
9. straight-line type multi-cavity lamination parallel processing vacuum apparatus according to claim 1, is characterized in that: the chemical gaseous phase depositing process strengthening by plasma in described sub-reaction chamber is prepared film on substrate.
10. straight-line type multi-cavity lamination parallel processing vacuum apparatus according to claim 1, is characterized in that: the substrate area that described vacuum apparatus is processed is greater than 0.6m
2.
11. straight-line type multi-cavity lamination parallel processing vacuum apparatuss according to claim 1, it is characterized in that: the process time of substrate film forming in described sub-reaction chamber, described the first transmission unit and the every action of the second transmission unit required transfer time scope was once 5-30 second in 10 minutes.
12. straight-line type multi-cavity lamination parallel processing vacuum apparatuss according to claim 1, is characterized in that: described a plurality of sub-reaction chambers can share one or more airing system or vacuum system.
13. straight-line type multi-cavity lamination parallel processing vacuum apparatuss according to claim 1, it is characterized in that: at described reaction chamber, with on entering the sidewall that sheet chamber or slice chamber be connected be not provided with one or some maintenance windows, described sub-reaction chamber, corresponding to size and the position of described sub-reaction chamber, is taken out in its size and position during for maintenance of the equipment.
14. straight-line type multi-cavity lamination parallel processing vacuum apparatuss according to claim 1, is characterized in that: described vacuum apparatus is silicon based hetero-junction manufacture of solar cells equipment, for the production of silicon based hetero-junction solar cell.
The using method of the straight-line type multi-cavity lamination parallel processing vacuum apparatus described in 15. 1 kinds of claim 1-14, comprising:
The first step, after the film-forming process in described sub-reaction chamber on substrate completes, the closing device of described sub-reaction chamber both sides is opened simultaneously;
Second step, the second transmission unit in described slice chamber transfers to substrate in described slice chamber from described sub-reaction chamber, and meanwhile, described in enter the first transmission unit in sheet chamber substrate entered sheet chamber to transfer in described sub-reaction chamber from described;
The 3rd step, the closing device of closing described sub-reaction chamber both sides, makes, in described sub-reaction chamber, chemical vapour deposition reaction occurs and prepares required film.
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| CN105420686A (en) * | 2015-12-31 | 2016-03-23 | 清远先导材料有限公司 | Graphite depositing device for chemical vapor deposition furnace |
| CN107587111A (en) * | 2017-09-30 | 2018-01-16 | 京东方科技集团股份有限公司 | Evaporated device |
| CN109195931A (en) * | 2016-06-02 | 2019-01-11 | 应用材料公司 | For method and apparatus of the deposition materials on continuous substrate |
| CN109980042A (en) * | 2018-12-19 | 2019-07-05 | 黄剑鸣 | HIT heterojunction solar battery manufacturing equipment |
| CN110828273A (en) * | 2018-08-09 | 2020-02-21 | 北京北方华创微电子装备有限公司 | Plasma apparatus and plasma system |
| CN112391608A (en) * | 2020-11-13 | 2021-02-23 | 宁波沁圆科技有限公司 | CVD processing system and processing method |
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