CN103094402B - PECVD legal system is for the cluster formula equipment and process of two-sided heterojunction solar battery - Google Patents
PECVD legal system is for the cluster formula equipment and process of two-sided heterojunction solar battery Download PDFInfo
- Publication number
- CN103094402B CN103094402B CN201110335191.3A CN201110335191A CN103094402B CN 103094402 B CN103094402 B CN 103094402B CN 201110335191 A CN201110335191 A CN 201110335191A CN 103094402 B CN103094402 B CN 103094402B
- Authority
- CN
- China
- Prior art keywords
- deposition
- carrier
- silicon chip
- intrinsic layer
- room
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
PECVD legal system, for a cluster formula equipment for two-sided heterojunction solar battery, comprises deposition chambers, and this deposition chambers comprises turnover sheet room that cluster formula arranges, preheating and central transfer chamber, intrinsic layer deposition room, p-type settling chamber and N-shaped settling chamber.PECVD legal system, for a technique for two-sided heterojunction solar battery, adopts PECVD legal system to implement for the cluster formula equipment of two-sided heterojunction solar battery, can complete the intrinsic layer deposition on the positive and negative two sides to silicon chip in the same chamber.PECVD legal system of the present invention can either save the operation of silicon wafer turnover for the cluster formula equipment and process of two-sided heterojunction solar battery, saves device fabrication cost and production time, can be good at again realizing the double-edged deposition of silicon chip.
Description
Technical field
The present invention relates to solar cell, particularly a kind of PECVD legal system is for the cluster formula equipment and process of two-sided heterojunction solar battery.
Background technology
Thin film silicon/crystalline silicon heterojunction solar battery is a kind of high efficiency crystalline silicon solar cell that low cost can be adopted to realize.This solar cell utilizes doping film silicon layer in crystalline silicon substrate, make pn knot.This layer film silicon layer only has tens nanometer thickness usually, and can using plasma enhancing chemical vapour deposition (CVD) (PECVD) technique deposit below 200 DEG C.Therefore, compared to traditional solar cell tied for pn by diffusion, needed for thin film silicon/crystalline silicon heterojunction solar battery, Energy input is few, and has higher open circuit voltage, thus causes very large concern.
Because thin film silicon/crystalline silicon heterojunction solar battery has positive and negative symmetrical structure, the particularity of this structure certainly will propose higher requirement to equipment.Realize the double-sided deposition of HIT battery, have two kinds of method: Yi Zhongshi at present, after the complete one side of substrate deposition, shift out vacuum chamber upset, and then send into vacuum chamber continuation deposition one side in addition; Another kind is, switching mechanism is positioned at chamber, and because switching mechanism requisite space is comparatively large, vacuum chamber must have enough headspaces or increase separately a vacuum upset chamber.These two kinds of ways have its limitation, and the first will destroy vacuum environment and take out substrate, extends battery preparation time, and the one side prepared easily impurity in oxidized or absorbed air, finally affect battery performance; The second adds equipment investment, and if cause fragment in switching process, also need to take vacuum chamber apart and clear up.
Summary of the invention
Object of the present invention, is the problems referred to above solving prior art existence, provides a kind of PECVD legal system for the cluster formula equipment and process of two-sided heterojunction solar battery.
The object of the present invention is achieved like this: a kind of PECVD legal system is for the cluster formula equipment of two-sided heterojunction solar battery, comprise deposition chambers, silicon chip carrier, air-path control system, electric-control system and vacuum pump set, deposition chambers is connected with air-path control system, electric-control system and vacuum pump set respectively, and electric-control system is connected with air-path control system; Silicon chip carrier is for carrying silicon chip turnover deposition chambers; Be characterized in:
Described deposition chambers comprises turnover sheet room that cluster formula arranges, preheating and central transfer chamber, intrinsic layer deposition room, p-type settling chamber and N-shaped settling chamber, preheating and central transfer chamber are arranged on centre, and turnover sheet room, intrinsic layer deposition room, p-type settling chamber and N-shaped settling chamber are connected to the surrounding of preheating and central transfer chamber; Top electrode and bottom electrode is respectively equipped with in intrinsic layer deposition room, p-type settling chamber and N-shaped settling chamber; The top electrode and bottom electrode of intrinsic layer deposition room are connected to air inlet; The top electrode of p-type settling chamber is connected with air inlet; The bottom electrode of N-shaped settling chamber is connected with air inlet; Manipulator connecting gear is provided with in preheating and central transfer chamber.
Described intrinsic layer deposition indoor are provided with reciprocating mechanism, and this reciprocating mechanism is connected with the driving mechanism being arranged on intrinsic layer deposition outdoor, and reciprocating mechanism moves up and down and silicon chip carrier can be driven to move up and down under the driving of driving mechanism.
PECVD legal system, for a technique for two-sided heterojunction solar battery, adopts PECVD legal system to implement for the cluster formula equipment of two-sided heterojunction solar battery, comprises the following steps:
A, by cleaning after silicon slice loading on carrier, put into turnover sheet room, shut turnover sheet room dodge gate and vacuumize;
B, reach after certain numerical value until vacuum degree, carrier is sent to preheating and central transfer chamber, and set temperature, preheat;
C, after preheating half an hour, carrier is sent to intrinsic layer deposition room, and pumping high vacuum, then carrier is moved to and be close together with bottom electrode, pole passes into gas source from power on, starts radio-frequency power supply, the front of silicon chip is carried out to the deposition of intrinsic layer, after completing the deposition to front side of silicon wafer, carrier is moved to and is close together with top electrode, pass into gas source from bottom electrode, start radio-frequency power supply, intrinsic layer deposition is carried out to the back side of silicon chip, completes the deposition to silicon chip back side;
D, complete two-sided intrinsic layer deposition after, carrier is sent to p-type settling chamber, and pumping high vacuum, allow carrier and bottom electrode be close together, pole passes into gas source from power on, starts radio-frequency power supply, front side of silicon wafer is carried out to the deposition of p-type amorphous silicon membrane;
E, complete p-type amorphous silicon membrane deposition after, carrier is sent to N-shaped settling chamber, and pumping high vacuum, allows carrier and top electrode be close together, pass into gas source from bottom electrode, start radio-frequency power supply, silicon chip back side is carried out to the deposition of N-shaped amorphous silicon membrane;
F, complete N-shaped amorphous silicon membrane deposition after, carrier is sent to turnover sheet room, is down to after room temperature until temperature, take out silicon chip, close the door and vacuumize;
G, follow-uply utilize that magnetron sputtering apparatus is two-sided on silicon chip prepares ito thin film respectively, and evaporate silver grating line electrode thereon respectively, complete the preparation of two-sided heterojunction solar battery.
PECVD legal system of the present invention can complete the intrinsic layer deposition on the positive and negative two sides to silicon chip in the same chamber for the cluster formula equipment and process of two-sided heterojunction solar battery, without the need to increasing extra chamber, silicon chip is overturn, be conducive to the production process simplifying photovoltaic device, reduce production cost, also simplify the manufacture process of heterojunction solar battery.
Compared with conventional H IT battery process route, first present invention process route carries out intrinsic layer deposition to the tow sides of silicon chip, after can effectively avoiding first depositing one-sided silicon wafer on the one hand, during deposition opposite side, the one side deposited is introduced to the possibility of impurity thereupon, be unfavorable for the deposition of opposite side; On the other hand, be close to and silicon chip both sides deposited simultaneously, the heterojunction boundary density of states can be reduced, thus improve the quality of HIT battery.
Accompanying drawing explanation
Fig. 1 is the typical structure schematic diagram of the two-sided heterojunction solar cell taking n-type silicon chip as substrate.
Fig. 2 PECVD of the present invention legal system is for the basic structure schematic diagram of the deposition chambers in the cluster formula equipment of two-sided heterojunction solar battery;
Fig. 3 is the basic structure schematic diagram of the intrinsic layer deposition room in the present invention;
Fig. 4 is the basic structure schematic diagram of the p-type settling chamber in the present invention;
Fig. 5 is the basic structure schematic diagram of the N-shaped settling chamber in the present invention.
Embodiment
PECVD legal system of the present invention is for the cluster formula equipment of two-sided heterojunction solar battery, comprise deposition chambers, silicon chip carrier, air-path control system, electric-control system and vacuum pump set, deposition chambers is connected with air-path control system, electric-control system and vacuum pump set respectively, and electric-control system is connected with air-path control system; Silicon chip carrier is for carrying silicon chip turnover deposition chambers; Above-mentioned air-path control system, electric-control system and vacuum pump set are all prior art.
See Fig. 2, coordinate see Fig. 3, Fig. 4, Fig. 5, deposition chambers in the present invention comprises turnover sheet room 1 that cluster formula arranges, preheating and central transfer chamber 2, intrinsic layer deposition room 3, p-type settling chamber 4 and N-shaped settling chamber 5, preheating and central transfer chamber 2 are arranged on centre, and turnover sheet room 1, intrinsic layer deposition room 3, p-type settling chamber 4 and N-shaped settling chamber 5 are connected to the four directions all around of preheating and central transfer chamber; Top electrode 31 and bottom electrode 32 is provided with in intrinsic layer deposition room 3; Top electrode 41 and bottom electrode 42 is provided with in p-type settling chamber 4; Top electrode 51 and bottom electrode 52 is provided with in N-shaped settling chamber 5; The top electrode 31 and bottom electrode 32 of intrinsic layer deposition room 3 are connected to air inlet 33,34; The top electrode 41 of p-type settling chamber 4 is connected with air inlet 43; On the bottom electrode of N-shaped settling chamber 5,51 are connected with air inlet 53; Manipulator connecting gear (out not shown) is provided with in preheating and central transfer chamber 2.
Coordinate see Fig. 3, reciprocating mechanism 7 is provided with in intrinsic layer deposition room 3 in the present invention, this reciprocating mechanism 7 is connected with the driving mechanism 8 be arranged on outside intrinsic layer deposition room 3, and reciprocating mechanism 7 moves up and down and silicon chip carrier can be driven to move up and down under the driving of driving mechanism 8.
PECVD legal system, for a technique for two-sided heterojunction solar battery, adopts above-mentioned PECVD legal system to implement for the cluster formula equipment of two-sided heterojunction solar battery, comprises the following steps:
A, by cleaning after silicon slice loading on carrier, put into turnover sheet room, shut turnover sheet room dodge gate and vacuumize;
B, reach after certain numerical value until vacuum degree, carrier is sent to preheating and central transfer chamber, and set temperature, preheat;
C, after preheating half an hour, carrier is sent to intrinsic layer deposition room, and pumping high vacuum, then carrier is moved to and be close together with bottom electrode, a depositing system is formed with top electrode, pole passes into gas source from power on, under certain sedimentary condition, start radio-frequency power supply, the front of silicon chip is carried out to the deposition of intrinsic layer, after completing the deposition to front side of silicon wafer, carrier is moved to and is close together with top electrode, a depositing system is formed with bottom electrode, gas source is passed into from bottom electrode, start radio-frequency power supply, intrinsic layer deposition is carried out to the back side of silicon chip, complete the deposition to silicon chip back side,
D, complete two-sided intrinsic layer deposition after, carrier is sent to p-type settling chamber, and pumping high vacuum, carrier and bottom electrode is allowed to be close together, form a depositing system with top electrode, pole passes into gas source from power on, under certain sedimentary condition, start radio-frequency power supply, front side of silicon wafer is carried out to the deposition of p-type amorphous silicon membrane;
E, complete p-type amorphous silicon membrane deposition after, carrier is sent to N-shaped settling chamber, and pumping high vacuum, carrier and top electrode is allowed to be close together, form a depositing system with bottom electrode, pass into gas source from bottom electrode, under certain sedimentary condition, start radio-frequency power supply, silicon chip back side is carried out to the deposition of N-shaped amorphous silicon membrane;
F, complete N-shaped amorphous silicon membrane deposition after, carrier is sent to turnover sheet room, is down to after room temperature until temperature, take out silicon chip, close the door and vacuumize;
G, follow-uply utilize that magnetron sputtering apparatus is two-sided on silicon chip prepares ito thin film respectively, and evaporate silver grating line electrode thereon respectively, complete the preparation of two-sided heterojunction solar battery.
Fig. 1 is the typical structure schematic diagram of the two-sided heterojunction solar cell taking n-type silicon chip as substrate.
Adopt the two-sided HIT solar cell prepared by equipment and process of the present invention, at analog light source AM1.5,100mW/cm
2etalon optical power irradiate under, battery conversion efficiency reaches more than 18%.
Silicon chip carrier adopts Embedded mode to place silicon chip, and silicon chip is embedded by downside, has fixed support on the upside of carrier, and downside is provided with flexible geometrical clamp, facilitates the embedding of silicon chip.
Claims (2)
1. a PECVD legal system is for the cluster formula equipment of two-sided heterojunction solar battery, comprise deposition chambers, silicon chip carrier, air-path control system, electric-control system and vacuum pump set, deposition chambers is connected with air-path control system, electric-control system and vacuum pump set respectively, and electric-control system is connected with air-path control system; Silicon chip carrier is for carrying silicon chip turnover deposition chambers; It is characterized in that:
Described deposition chambers comprises turnover sheet room that cluster formula arranges, preheating and central transfer chamber, intrinsic layer deposition room, p-type settling chamber and N-shaped settling chamber, preheating and central transfer chamber are arranged on centre, and turnover sheet room, intrinsic layer deposition room, p-type settling chamber and N-shaped settling chamber are connected to the surrounding of preheating and central transfer chamber; Top electrode and bottom electrode is respectively equipped with in intrinsic layer deposition room, p-type settling chamber and N-shaped settling chamber; The top electrode and bottom electrode of intrinsic layer deposition room are connected to air inlet; The top electrode of p-type settling chamber is connected with air inlet; The bottom electrode of N-shaped settling chamber is connected with air inlet; Manipulator connecting gear is provided with in preheating and central transfer chamber;
Described intrinsic layer deposition indoor are provided with reciprocating mechanism, and this reciprocating mechanism is connected with the driving mechanism being arranged on intrinsic layer deposition outdoor, and reciprocating mechanism moves up and down and silicon chip carrier can be driven to move up and down under the driving of driving mechanism.
2. PECVD legal system is for a technique for two-sided heterojunction solar battery, it is characterized in that, adopts PECVD legal system to implement for the cluster formula equipment of two-sided heterojunction solar battery, comprises the following steps:
A, by cleaning after silicon slice loading on carrier, put into turnover sheet room, shut turnover sheet room dodge gate and vacuumize;
B, reach after certain numerical value until vacuum degree, carrier is sent to preheating and central transfer chamber, and set temperature, preheat;
C, after preheating half an hour, carrier is sent to intrinsic layer deposition room, and pumping high vacuum, then carrier is moved to and be close together with bottom electrode, pole passes into gas source from power on, starts radio-frequency power supply, the front of silicon chip is carried out to the deposition of intrinsic layer, after completing the deposition to front side of silicon wafer, carrier is moved to and is close together with top electrode, pass into gas source from bottom electrode, start radio-frequency power supply, intrinsic layer deposition is carried out to the back side of silicon chip, completes the deposition to silicon chip back side;
D, complete two-sided intrinsic layer deposition after, carrier is sent to p-type settling chamber, and pumping high vacuum, allow carrier and bottom electrode be close together, pole passes into gas source from power on, starts radio-frequency power supply, front side of silicon wafer is carried out to the deposition of p-type amorphous silicon membrane;
E, complete p-type amorphous silicon membrane deposition after, carrier is sent to N-shaped settling chamber, and pumping high vacuum, allows carrier and top electrode be close together, pass into gas source from bottom electrode, start radio-frequency power supply, silicon chip back side is carried out to the deposition of N-shaped amorphous silicon membrane;
F, complete N-shaped amorphous silicon membrane deposition after, carrier is sent to turnover sheet room, is down to after room temperature until temperature, take out silicon chip, close the door and vacuumize;
G, follow-uply utilize that magnetron sputtering apparatus is two-sided on silicon chip prepares ito thin film respectively, and evaporate silver grating line electrode thereon respectively, complete the preparation of two-sided heterojunction solar battery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110335191.3A CN103094402B (en) | 2011-10-28 | 2011-10-28 | PECVD legal system is for the cluster formula equipment and process of two-sided heterojunction solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110335191.3A CN103094402B (en) | 2011-10-28 | 2011-10-28 | PECVD legal system is for the cluster formula equipment and process of two-sided heterojunction solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103094402A CN103094402A (en) | 2013-05-08 |
| CN103094402B true CN103094402B (en) | 2016-04-27 |
Family
ID=48206753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110335191.3A Active CN103094402B (en) | 2011-10-28 | 2011-10-28 | PECVD legal system is for the cluster formula equipment and process of two-sided heterojunction solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103094402B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810771A (en) * | 2016-05-12 | 2016-07-27 | 南昌大学 | Back crystal silicon heterojunction two-sided solar cell and preparation method therefor |
| CN110838530A (en) * | 2018-08-17 | 2020-02-25 | 中智(泰兴)电力科技有限公司 | 7-cavity horizontal PECVD-PVD integrated equipment for solar cell manufacturing |
| CN112952000A (en) * | 2019-12-10 | 2021-06-11 | 中国科学院大连化学物理研究所 | Cluster type deposition system for preparing perovskite solar cell |
| CN113088929B (en) * | 2021-03-01 | 2022-05-20 | 中山德华芯片技术有限公司 | MOCVD reaction chamber and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101796481A (en) * | 2007-08-31 | 2010-08-04 | 应用材料股份有限公司 | Photovoltaic production line |
| CN202308007U (en) * | 2011-10-28 | 2012-07-04 | 上海太阳能工程技术研究中心有限公司 | Cluster-type device for preparing double-sided heterojunction solar battery by plasma enhanced chemical vapor deposition (PECVD) method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030141820A1 (en) * | 2002-01-30 | 2003-07-31 | Applied Materials, Inc. | Method and apparatus for substrate processing |
| US20080271675A1 (en) * | 2007-05-01 | 2008-11-06 | Applied Materials, Inc. | Method of forming thin film solar cells |
| US20090208668A1 (en) * | 2008-02-19 | 2009-08-20 | Soo Young Choi | Formation of clean interfacial thin film solar cells |
-
2011
- 2011-10-28 CN CN201110335191.3A patent/CN103094402B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101796481A (en) * | 2007-08-31 | 2010-08-04 | 应用材料股份有限公司 | Photovoltaic production line |
| CN202308007U (en) * | 2011-10-28 | 2012-07-04 | 上海太阳能工程技术研究中心有限公司 | Cluster-type device for preparing double-sided heterojunction solar battery by plasma enhanced chemical vapor deposition (PECVD) method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103094402A (en) | 2013-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103094403B (en) | PECVD prepares string type equipment and the technique of two-sided heterojunction solar battery | |
| CN104409405B (en) | Cell conveying mechanism for preparing HIT (Heterojunction with Intrinsic Thinlayer) solar battery with flat plate-type PECVD (Plasma Enhanced Chemical Vapor Deposition) and method thereof | |
| CN104584237B (en) | Photovoltaic element and its manufacture method | |
| CN103094402B (en) | PECVD legal system is for the cluster formula equipment and process of two-sided heterojunction solar battery | |
| KR101324292B1 (en) | High efficiency solar cell and manufacturing method thereof, and solar cell manufacturing apparatus for the same | |
| CN102208477B (en) | Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof | |
| CN103325879B (en) | Efficient triple stack layers hetero-junction thin-film solar cell and its preparation method | |
| CN104795463A (en) | PECVD device for producing heterojunction solar cells and working method of device | |
| CN202308007U (en) | Cluster-type device for preparing double-sided heterojunction solar battery by plasma enhanced chemical vapor deposition (PECVD) method | |
| JP2009536455A (en) | Photovoltaic device using lateral crystallization process and manufacturing method thereof | |
| CN202307808U (en) | Serial device for preparing double-sided heterojunction solar battery by PECVD (Plasma Enhanced Chemical Vapor Deposition) method | |
| KR20150078549A (en) | Apparatus for manufacturing integrated thin film solar cell | |
| CN103258919A (en) | Method for passivating amorphous silicon and polycrystalline silicon film interfaces and manufacturing single junction polycrystalline silicon amorphous silicon (SPA) structure heterojunction with intrinsic thin-layer (HIT) cell | |
| CN201323204Y (en) | Antapex contact heterojunction solar battery | |
| CN105154852A (en) | Method for overcoming boron pollution in PECVD technology of heterojunction solar cell | |
| KR20090012916A (en) | Solar cell and method for the same | |
| CN201667340U (en) | Laminated solar battery | |
| CN101702413B (en) | Manufacturing method of gallium arsenide/gallium antimonide solar battery | |
| CN102842634A (en) | Back emitting electrode heterojunction solar cell and preparation method | |
| CN201990728U (en) | Low-pressure chemical vapor deposition reaction equipment | |
| CN102064236A (en) | Manufacture method of thin-film solar cell | |
| KR101212486B1 (en) | Hetero-junction solar cell and method for fabricating the same | |
| CN105336807A (en) | Heterojunction solar cell and preparation method thereof and solar cell module | |
| CN102024676A (en) | Method for manufacturing semiconductor device in single-chamber reactor | |
| CN101707218B (en) | Preparation method of common pole-type thin film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Li Hongbo Inventor after: Zhang Yuancheng Inventor after: Chen Yishun Inventor after: Liu Qin Inventor after: Zhang Yingqing Inventor before: Guo Qunchao Inventor before: Wang Lingyun Inventor before: Liu Qin Inventor before: Zhang Yuancheng Inventor before: Zhang Yingqing Inventor before: Li Hongbo |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: GUO QUNCHAO WANG LINGYUN LIU QIN ZHANG YUANCHENG ZHANG YINGQING LI HONGBO TO: LI HONGBO ZHANG YUANCHENG CHEN YISHUN LIU QIN ZHANG YINGQING |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |