CN101702413B - Manufacturing method of gallium arsenide/gallium antimonide solar battery - Google Patents
Manufacturing method of gallium arsenide/gallium antimonide solar battery Download PDFInfo
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- CN101702413B CN101702413B CN2009100951383A CN200910095138A CN101702413B CN 101702413 B CN101702413 B CN 101702413B CN 2009100951383 A CN2009100951383 A CN 2009100951383A CN 200910095138 A CN200910095138 A CN 200910095138A CN 101702413 B CN101702413 B CN 101702413B
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- gaas
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- epitaxial growth
- molecular beam
- gasb
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a manufacturing method of a gallium arsenide/gallium antimonide solar battery, comprising the following steps: a gallium arsenide single crystal is used as a substrate, and sub battery adsorptive layers are grown on the gallium arsenide substrate by utilizing the molecular beam epitaxy (MBE) growth technology; special processes include: (A) a GaAs buffering layer is grown on the GaAs substrate at 580 DEG C; (B) a GaSb layer is grown on the GaAs buffering layer at 450 DEG C; (C) a top electrode is manufactured on the GaAs layer, and a back electrode is manufactured on the GaSb layer; (D) the battery manufacturing is carried out, and the battery is packed to obtain finished product.
Description
Technical field
The present invention relates to a kind of manufacture method of gallium arsenide/gallium antimonide solar battery.Especially the manufacture method that relates to a kind of III-V family semi-conducting material solar cell.
Background technology
Along with the exhaustion of fossil energy and increasingly sharpening of global warming, the utilization of solar energy is just receiving the many attention of People more and more.Solar cell is to be the core devices of electric energy with conversion of solar energy.Efficient solar battery has important purposes at aspects such as Aero-Space, space explorations.The large-scale application of efficient solar battery can alleviating energy crisis cheaply, reduces greenhouse gas emission, and the offspring benefits future generations.Therefore, the efficient solar battery technology is the particularly research fields of developed country's emphasis support of various countries always.
There are the mechanical laminated battery of GaSb/GaAs, GaInP/GaAs battery etc. in the space with efficient solar battery at present.The efficient of the GaInP/GaAs/Ge three joint solar cells that the SPECTROLAB of Boeing wholly-owned subsidiary produces reaches 28.3%, by 2006, has sold 2,000,000.GaSb/GaAs machinery laminated battery photoelectric conversion efficiency has reached 37% (AM1.5), is the higher compound semiconductor solar cell of efficient.(application number: 200510084937.2) adopt high-quality GaSb and GaAs single-chip is that raw material are made GaSb/GaAs machinery laminated battery to patent, but because it needs high-quality GaSb, GaAs body material, so cost is high, power-weight ratio is than big.Utilize growing technologies such as molecular beam epitaxy, metal organic chemical vapor deposition and the liquid phase epitaxy GaSb layer of on gallium arsenide single-crystal wafer, growing; And with this material gallium arsenide/gallium antimonide solar battery; Because material only comprises III, V group element, can an extension obtain; GaAs, GaSb, be the direct band gap material, absorption coefficient is big, and capability of resistance to radiation is strong, and the life-span is long; Each layer is the film of several micron thick in the material, and the consumption of rare elements such as Ga, As, Sb is few, and be lower than GaSb/GaAs machinery laminated battery cost.These have all determined the gallium arsenide/gallium antimonide material to be fit to very much make efficient solar battery.The present invention is based on above advantage, a kind of manufacture method of new and effective solar cell is provided, can be spacecraft the high-performance power supply is provided.This technology greatly reduces the battery cost, to ground universal significant with the high-efficiency photovoltaic electrification system.
Summary of the invention
To the problem that background technology proposes, the object of the present invention is to provide a kind of manufacture method of gallium arsenide/gallium antimonide solar battery.With the gallium arsenide single-crystal wafer is substrate, utilizes molecular beam epitaxy (MBE) growing technology, the sub-battery obsorbing layer of growth on gallium arsenide substrate, detailed process comprises: A) under 580 ℃ of conditions on the GaAs substrate growth GaAs resilient coating; B) under 450 ℃ of conditions on the GaAs resilient coating of growth growth GaSb layer; C) on the GaAs layer, make top electrode, on the GaSb layer, make back electrode; D) device is encapsulated, accomplish the making of battery.In order to make the efficient solar battery device.
The present invention implements according to the following steps:
A) under 580 ℃, epitaxial growth GaAs resilient coating on GaAs single-chip substrate;
B) under 450 ℃, epitaxial growth gallium antimonide GaSb layer on the GaAs resilient coating;
C) make top electrode on the GaAs surface, make back electrode, accomplish the making of solar cell at the GaSb laminar surface;
D) solar cell of accomplishing is encapsulated, obtain the solar cell finished product.
The present invention has following beneficial effect:
1, each layer is the film of several micron thick in the material, and the consumption of rare elements such as Ga, As, Sb is few, and be lower than GaSb/GaAs machinery laminated battery cost.
2, the GaSb/GaAs material only comprises III, V group element among the present invention, can an extension obtain.
3, GaAs, GaSb are the direct band gap material, and absorption coefficient is big, and capability of resistance to radiation is strong, and the life-span is long.
Description of drawings
Fig. 1 is a process chart of the present invention.
Embodiment
Embodiment:
Comprise the steps:
The N that (1) will exempt to clean
+-GaAs single-chip substrate is placed on molecular beam epitaxy (MBE) the growth room specimen holder, high temperature deoxidation under 580 ℃ of conditions, and the GaAs underlayer temperature risen to 630 ℃ of high-temperature degassing, and then underlayer temperature is reduced to 580 ℃, open Ga, As source stove shutter, carry out doped n
+The growth of-GaAs resilient coating, doping content are n
+3～5 * 10
18The molecular beam epitaxial growth chamber is at n
+Be in vacuum state before the GaAs layer growth, pressure is 5 * 10
-9Mbar; The molecular beam epitaxial growth chamber is at n
+In the GaAs buffer growth process, the molecular beam epitaxial growth chamber pressure is 5～8 * 10
-8Mbar; n
+GaAs buffer growth thickness is 500nm.
(2) close Ga, As source stove shutter, the single-chip underlayer temperature is reduced to 450 ℃, open Ga, Sb source stove shutter, carry out the growth of p-GaSb layer, doping content is p 1～3 * 10
18The molecular beam epitaxial growth chamber is in p-GaSb layer growth process, and the molecular beam epitaxial growth chamber pressure is 3～5 * 10
-8Mbar; P-GaSb layer growth thickness is 2950nm;
(3) carry out p
+The growth of GaSb layer, doping content are p
+1～2 * 10
19The molecular beam epitaxial growth chamber is at p
+In the GaSb layer growth process, the molecular beam epitaxial growth chamber pressure is 3～5 * 10
-8Mbar; p
+GaSb layer growth thickness is 50nm; Close Ga, Sb source stove shutter, accomplish p
+The growth of GaSb layer;
(4) at N
+-GaAs single-chip surface makes top electrode;
(5) at p
+-GaSb laminar surface is made back electrode;
(6) encapsulate, obtain solar cell.
Claims (1)
1. the manufacture method of a gallium arsenide/gallium antimonide solar battery; With the gallium arsenide single-crystal wafer is substrate; Utilize the molecular beam epitaxial growth technology, the sub-battery obsorbing layer of growth is made solar cell on gallium arsenide substrate; Its step is A) under 580 ℃, epitaxial growth GaAs resilient coating on GaAs single-chip substrate; B) under 450 ℃, epitaxial growth gallium antimonide GaSb layer on the GaAs resilient coating; C) make top electrode at GaAs single-chip substrate surface, make back electrode, accomplish the making of solar cell at the GaSb laminar surface; D) solar cell of accomplishing is encapsulated, obtains the solar cell finished product,
It is characterized in that:
Described is that the GaAs single-chip substrate of exempting to clean is placed on the specimen holder of molecular beam epitaxial growth chamber at epitaxial growth GaAs resilient coating on the GaAs single-chip substrate; High temperature deoxidation under 580 ℃ of conditions; And GaAs single-chip underlayer temperature risen to 630 ℃ of high-temperature degassing; Then the single-chip underlayer temperature is reduced to 580 ℃, open Ga, As source stove shutter, carry out doped n
+The growth of-GaAs resilient coating, doping content are n
+3～5 * 10
18, the molecular beam epitaxial growth chamber is at n
+Be in vacuum state before the-GaAs buffer growth, pressure is 5 * 10
-9Mbar, the molecular beam epitaxial growth chamber is at n
+In-GaAs buffer growth the process, the molecular beam epitaxial growth chamber pressure is 5～8 * 10
-8Mbar, n
+-GaAs buffer growth thickness is 500nm; N will grow
+The single-chip underlayer temperature of-GaAs resilient coating is reduced to 450 ℃, opens Ga, Sb source stove shutter, carries out the growth of p-GaSb layer, and doping content is p1～3 * 10
18, the molecular beam epitaxial growth chamber is in p-GaSb layer growth process, and the molecular beam epitaxial growth chamber pressure is 3～5 * 10
-8Mbar, p-GaSb layer growth thickness is 2950nm; Carry out p afterwards
+The growth of GaSb layer, doping content are p
+1～2 * 10
19, the molecular beam epitaxial growth chamber is at p
+In the GaSb layer growth process, the molecular beam epitaxial growth chamber pressure is 3～5 * 10
-8Mbar, p
+GaSb layer growth thickness is 50nm;
Described at GaSb laminar surface making back electrode, be at p
+The GaSb laminar surface is made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100951383A CN101702413B (en) | 2009-11-05 | 2009-11-05 | Manufacturing method of gallium arsenide/gallium antimonide solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100951383A CN101702413B (en) | 2009-11-05 | 2009-11-05 | Manufacturing method of gallium arsenide/gallium antimonide solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101702413A CN101702413A (en) | 2010-05-05 |
| CN101702413B true CN101702413B (en) | 2012-05-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009100951383A Expired - Fee Related CN101702413B (en) | 2009-11-05 | 2009-11-05 | Manufacturing method of gallium arsenide/gallium antimonide solar battery |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659123B (en) * | 2013-11-25 | 2018-08-21 | 华中科技大学 | Compound film solar cell and preparation method thereof |
| CN108807584A (en) * | 2018-05-30 | 2018-11-13 | 华南理工大学 | A kind of GaAs- antimony alkene heterojunction solar battery and preparation method thereof |
| CN111362590A (en) * | 2020-03-25 | 2020-07-03 | 四川猛犸半导体科技有限公司 | Thin film device |
| CN114855269B (en) * | 2022-04-29 | 2024-03-29 | 杭州富加镓业科技有限公司 | Method for preparing homoepitaxial gallium oxide film on high-resistance gallium oxide substrate and molecular beam epitaxy equipment |
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