CN101702414B - Manufacturing method of semiconductor solar cell - Google Patents
Manufacturing method of semiconductor solar cell Download PDFInfo
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- CN101702414B CN101702414B CN2009100951398A CN200910095139A CN101702414B CN 101702414 B CN101702414 B CN 101702414B CN 2009100951398 A CN2009100951398 A CN 2009100951398A CN 200910095139 A CN200910095139 A CN 200910095139A CN 101702414 B CN101702414 B CN 101702414B
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- growth
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- ingaassb
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
The invention discloses a manufacturing method of a semiconductor solar cell. The method takes a single crystal wafer doped with gallium arsenide as a substrate and utilizes a growth technology of molecular beam epitaxy (MBE). A sub-cell absorbing layer grows on a gallium arsenide substrate. The manufacturing method comprises the following steps: growing a GaAs buffer layer and a p+GaAsSb/n+GaAsSb tunneling junction on the GaAs substrate at the temperature of 580 DEG C; growing a GaSb layer and a p+GaAsSb/n+InAsSb tunneling junction at the temperature of 430; growing an InGaAsSb alloy layer at the temperature of 430 DEG C; manufacturing a top electrode on the surface of gallium arsenide single crystal wafer substrate; manufacturing a back electrode on the surface of the InGaAsSb alloy layer, and then encapsulating to finish the manufacturing of the solar cells.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor solar cell, especially relate to the manufacture method that a kind of III-V family semi-conducting material is tied efficient solar battery more.
Background technology
Along with the exhaustion of fossil energy and increasingly sharpening of global warming, the utilization of solar energy just is being subjected to people and is more and more paying attention to.Solar cell is to be the core devices of electric energy with conversion of solar energy.Efficient solar battery has important purposes at aspects such as Aero-Space, space explorations.The large-scale application of efficient solar battery can alleviating energy crisis cheaply, reduces greenhouse gas emission, and the offspring benefits future generations.Therefore, the efficient solar battery technology is the particularly research fields of developed country's emphasis support of various countries always.
There are the mechanical laminated battery of GaSb/GaAs, GaInP/GaAs battery etc. in the space with efficient solar battery at present.The efficient of the GaInP/GaAs/Ge three joint solar cells that the SPECTROLAB of Boeing wholly-owned subsidiary produces reaches 28.3%, by 2006, has sold 2,000,000.GaSb/GaAs machinery laminated battery photoelectric conversion efficiency has reached 37% (AM1.5), is the higher compound semiconductor solar cell of efficient, but because it needs high-quality GaSb, GaAs body material, so the cost height, power-weight ratio is than big.The GaInP/GaAs battery can only absorb the photon of energy greater than 1.4eV, can not cover infrared band, so can't further improve photoelectric conversion efficiency.The GaInAsSb/GaSb/GaAs material can absorb the solar radiation of 0.5-1.4eV wave band, is the expansion to the GaInP/GaAs absorption region.Combine with the GaInP/GaAs novel solar cell material that obtains of GaInAsSb/GaSb/GaAs can be absorbed the solar radiation of 0.5-1.9eV scope, the conversion efficiency of solar cell is improved greatly.The GaInAsSb/GaSb/GaAs material only comprises III, V group element, can an extension obtain; GaAs, GaSb, GaInAsSb are the direct band gap material, and absorption coefficient is big, and capability of resistance to radiation is strong, and the life-span is long; Each layer is the film of several micron thickness in the material, and the consumption of rare elements such as Ga, In, Sb is few, and is lower than GaSb/GaAs laminated battery cost.These have all determined the GaInAsSb/GaSb/GaAs material to be fit to very much make efficient solar battery.The present invention is based on above advantage, a kind of manufacture method of new and effective solar cell is provided, can be spacecraft the high-performance power supply is provided.This technology has further reduced the battery cost, and is significant with the popularization of high-efficiency photovoltaic electrification system to ground.
Summary of the invention
Problem at the background technology proposition, the object of the present invention is to provide a kind of manufacture method of semiconductor solar cell, with the undoped gallium arsenide single-chip is substrate, utilize molecular beam epitaxy (MBE) growing technology, the sub-battery obsorbing layer of growth on gallium arsenide substrate, encapsulate then, finish the making of battery.
Concrete implementation step of the present invention is:
1) be substrate with the undoped gallium arsenide single-chip, utilize molecular beam epitaxy (MBE) growing technology, under 580 ℃, growth GaAs resilient coating on the GaAs substrate;
2) p that on the GaAs resilient coating, grows
+GaAsSb/n
+The GaAsSb tunnel junctions;
3) under 450 ℃, at p
+GaAsSb/n
+Growth GaSb layer on the GaAsSb tunnel junctions;
4) p that on the GaSb layer, grows
+GaSb/n
+The InAsSb tunnel junctions;
5) under 430 ℃, at p
+GaSb/n
+Growth InGaAsSb alloy-layer on the InAsSb tunnel junctions;
6) make top electrode at the gallium arsenide single-crystal wafer substrate surface, make back electrode on InGaAsSb alloy-layer surface.
The present invention has following beneficial effect:
1, utilizes the present invention, the spectral absorption scope of solar cell is extended to the 0.5-1.4eV wave band, particularly increased absorption, be highly profitable for the conversion efficiency that improves solar cell to infrared part.
2, the GaInAsSb/GaSb/GaAs material only comprises III, V group element among the present invention, can an extension obtain.
3, GaAs, GaSb, GaInAsSb are the direct band gap material, and absorption coefficient is big, and capability of resistance to radiation is strong, and the life-span is long.
Embodiment
Embodiment
1) N that will exempt to clean
+-GaAs substrate is placed on the specimen holder of molecular beam epitaxial growth chamber, high temperature deoxidation under 580 ℃ of conditions, and with N
+-GaAs underlayer temperature rises to 630 ℃ of high-temperature degassing, underlayer temperature is reduced to 580 ℃ then; Open Ga, As source stove shutter, at N
+Carry out the growth of p-GaAs resilient coating on the-GaAs substrate, doping content is p3～5 * 10
18, described molecular beam epitaxial growth chamber is in vacuum state before the p-GaAs layer growth, and pressure is 5 * 10
-9Mbar, growth room pressure in p-GaAs buffer growth process is 7～8.5 * 10
-8Mbar, p-GaAs buffer growth thickness are 0.5 μ m, and the As of p-GaAs resilient coating when growth: Ga line ratio is 20: 1;
2) growth p
+GaAsSb/n
+GaAsSb tunnel junctions, tunnel junctions comprise that p type doping content is 1～3 * 10
19, thickness is that GaAsSb layer and the n type doping content of 0.015 μ m is 5～6 * 10
19, thickness is the GaAsSb layer of 0.015 μ m;
3) close Ga source stove shutter, underlayer temperature is reduced to about 450 ℃, close As source stove shutter, open Ga, Sb source stove shutter, carry out the growth of n-GaSb layer, doping content is n 1～3 * 10
18, the molecular beam epitaxial growth chamber is in n-GaSb layer growth process, and the molecular beam epitaxial growth chamber pressure is 3～5 * 10
-8Mbar, n-GaSb layer growth thickness are 1 μ m; Sb in the n-GaSb layer growth process: Ga line ratio is 5.5: 1;
Carry out the growth of p-GaSb layer, doping content is p 1～3 * 10
18, the molecular beam epitaxial growth chamber is in p-GaSb layer growth process, and the molecular beam epitaxial growth chamber pressure is 3～5 * 10
-8Mbar, p-GaSb layer growth thickness are 1 μ m; Sb in the p-GaSb layer growth process: Ga line ratio is 5.5: 1;
4) growth p
+GaSb/n
+InAsSb tunnel junctions, tunnel junctions comprise that p type doping content is 1～3 * 10
19, thickness is that GaSb layer and the n type doping content of 0.015 μ m is 5～6 * 10
19, thickness is the InAsSb layer of 0.015 μ m;
5) close Ga source stove shutter, underlayer temperature drops to 430 ℃, opens In, Ga, As source stove shutter simultaneously, growth n-InGaAsSb alloy-layer, and doping content is n 2～4 * 10
18, the molecular beam epitaxial growth chamber is in n-InGaAsSb layer growth process, and the molecular beam epitaxial growth chamber pressure is 6～7 * 10
-8Mbar, the growth thickness of n-InGaAsSb alloy-layer are 1.5 μ m, As: Sb: Ga in the n-InGaAsSb layer growth process: In line ratio is 20: 4: 1: 1;
Carry out p
+The growth of-InGaAsSb alloy-layer, doping content are p
+7～8 * 10
18The molecular beam epitaxial growth chamber is at p
+In-InGaAsSb layer growth the process, the molecular beam epitaxial growth chamber pressure is 6～7 * 10
-8Mbar, p
+The growth thickness of-InGaAsSb alloy-layer is 1.5 μ m, p
+As: Sb: Ga in the-InGaAsSb layer growth process: In line ratio is 20: 4: 1: 1;
6) make top electrode at the GaAs substrate surface, at p
+-InGaAsSb alloy-layer surface makes back electrode;
7) encapsulate, finish the making of solar cell.
Claims (1)
1. the manufacture method of a semiconductor solar cell is characterized in that: its concrete implementation step is,
1) N that will exempt to clean
+-GaAs substrate is placed on the specimen holder of molecular beam epitaxial growth chamber, high temperature deoxidation under 580 ℃ of conditions, and with N
+-GaAs underlayer temperature rises to 630 ℃ of high-temperature degassing, underlayer temperature is reduced to 580 ℃ then; Open Ga, As source stove shutter, at N
+Carry out the growth of p-GaAs resilient coating on the-GaAs substrate, doping content is p3～5 * 10
18, described molecular beam epitaxial growth chamber is in vacuum state before the p-GaAs layer growth, and pressure is 5 * 10
-9Mbar, growth room pressure in p-GaAs buffer growth process is 7～8.5 * 10
-8Mbar, p-GaAs buffer growth thickness are 0.5 μ m, and the As of p-GaAs resilient coating when growth: Ga line ratio is 20: 1;
2) growth p
+GaAsSb/n
+The GaAsSb tunnel junctions, it comprises that p type doping content is 1～3 * 10
19, thickness is that GaAsSb layer and the n type doping content of 0.015 μ m is 5～6 * 10
19, thickness is the GaAsSb layer of 0.015 μ m;
3) close Ga source stove shutter, underlayer temperature is reduced to about 450 ℃, close As source stove shutter, open Ga, Sb source stove shutter, carry out the growth of n-GaSb layer, doping content is n 1～3 * 10
18, the molecular beam epitaxial growth chamber is in n-GaSb layer growth process, and the molecular beam epitaxial growth chamber pressure is 3～5 * 10
-8Mbar, n-GaSb layer growth thickness are 1 μ m; Sb in the n-GaSb layer growth process: Ga line ratio is 5.5: 1;
Carry out the growth of p-GaSb layer, doping content is p 1～3 * 10
18, the molecular beam epitaxial growth chamber is in p-GaSb layer growth process, and the molecular beam epitaxial growth chamber pressure is 3～5 * 10
-8Mbar, p-GaSb layer growth thickness are 1 μ m; Sb in the p-GaSb layer growth process: Ga line ratio is 5.5: 1;
4) growth p
+GaSb/n
+InAsSb tunnel junctions, tunnel junctions comprise that p type doping content is 1～3 * 10
19, thickness is that GaSb layer and the n type doping content of 0.015 μ m is 5～6 * 10
19, thickness is the InAsSb layer of 0.015 μ m;
5) close Ga source stove shutter, underlayer temperature drops to 430 ℃, opens In, Ga, As source stove shutter simultaneously, growth n-InGaAsSb alloy-layer, and doping content is n 2～4 * 10
18, the molecular beam epitaxial growth chamber is in n-InGaAsSb layer growth process, and the molecular beam epitaxial growth chamber pressure is 6～7 * 10
-8Mbar, the growth thickness of n-InGaAsSb alloy-layer are 1.5 μ m, As: Sb: Ga in the n-InGaAsSb layer growth process: In line ratio is 20: 4: 1: 1;
Carry out p
+The growth of-InGaAsSb alloy-layer, doping content are p
+7～8 * 10
18The molecular beam epitaxial growth chamber is at p
+In-InGaAsSb layer growth the process, the molecular beam epitaxial growth chamber pressure is 6～7 * 10
-8Mbar, p
+The growth thickness of-InGaAsSb alloy-layer is 1.5 μ m, p
+As: Sb: Ga in the-InGaAsSb layer growth process: In line ratio is 20: 4: 1: 1;
6) make top electrode at the GaAs substrate surface, at p
+-InGaAsSb alloy-layer surface makes back electrode;
7) encapsulate, finish the making of solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100951398A CN101702414B (en) | 2009-11-05 | 2009-11-05 | Manufacturing method of semiconductor solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100951398A CN101702414B (en) | 2009-11-05 | 2009-11-05 | Manufacturing method of semiconductor solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN101702414A CN101702414A (en) | 2010-05-05 |
| CN101702414B true CN101702414B (en) | 2011-05-04 |
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| CN2009100951398A Expired - Fee Related CN101702414B (en) | 2009-11-05 | 2009-11-05 | Manufacturing method of semiconductor solar cell |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184999B (en) * | 2011-04-02 | 2013-12-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
| CN102943241B (en) * | 2012-11-23 | 2017-05-03 | 中国电子科技集团公司第十八研究所 | Method for manufacturing sodium-doped absorbing layer on reel-to-reel flexible polyimide (PI) substrate |
| CN103474501B (en) * | 2013-09-13 | 2016-01-20 | 中国科学技术大学 | A kind of selective emitter gallium antimonide infrared cell and preparation method thereof |
| CN104916725A (en) * | 2015-04-22 | 2015-09-16 | 中国科学院半导体研究所 | Three-junction laminated solar cell and manufacturing method thereof |
| CN105990463A (en) * | 2016-05-11 | 2016-10-05 | 河海大学 | Selective emitter GaInAsSb thermophotovoltaic cell and preparation method thereof |
| CN113990973A (en) * | 2021-11-02 | 2022-01-28 | 苏州镓港半导体有限公司 | Silicon-based thermal photovoltaic cell and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1120244A (en) * | 1994-06-11 | 1996-04-10 | 李国昌 | Manufacturing technology and using of efficient solar energy conversion to compound photoelectric pol |
| CN1431721A (en) * | 2003-01-14 | 2003-07-23 | 河北科技大学 | Solar energy conversion photocell with multi-junction and poles joined |
| CN101425548A (en) * | 2008-12-16 | 2009-05-06 | 长春理工大学 | InAs quantum point material preparing method and application thereof in solar cell |
-
2009
- 2009-11-05 CN CN2009100951398A patent/CN101702414B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1120244A (en) * | 1994-06-11 | 1996-04-10 | 李国昌 | Manufacturing technology and using of efficient solar energy conversion to compound photoelectric pol |
| CN1431721A (en) * | 2003-01-14 | 2003-07-23 | 河北科技大学 | Solar energy conversion photocell with multi-junction and poles joined |
| CN101425548A (en) * | 2008-12-16 | 2009-05-06 | 长春理工大学 | InAs quantum point material preparing method and application thereof in solar cell |
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| CN101702414A (en) | 2010-05-05 |
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Granted publication date: 20110504 Termination date: 20111105 |