TWI802280B - Substrate processing system and substrate processing method - Google Patents

Abstract

The disclosure provides a substrate processing system and method. The processing system includes a sub-module frame provided with an opening, a tray, and a film. Wherein the sub-module frame is movably arranged on the tray; the thin film is coupled to the sub-module frame and covers the opening, the film is provided with a installation opening, the area of the installation opening is less than or equal to the area of the opening, and the installation opening is used for coupling a substrate; wherein an area of the installation opening is smaller than an area of the substrate, and when the substrate is coupled to the film, the substrate covers the installation opening. In the present disclosure , the sub-module frame is movably arranged on the tray and totally covering the tray surface exposed to the reactants, so that the substrate processing system can realize the flipping and switching of the upper surface and the lower surface of the substrate when processing the substrate. At the same time, it avoids the problem that the processing tray needs to be switched in the process room of the system, and there is no need to place different trays in different categories, which reduces the production cost, and more importantly, avoids cross contamination of the substrate.

Description

Substrate processing system and method

The invention relates to the technical field of photoelectricity and solar cells, in particular to a substrate processing system and method.

Currently, the process for heterojunction cell processing is broken down into three separate systems. For example, the process system for processing substrates needs to form a rough surface on both sides of the substrate, and use plasma-enhanced chemical vapor deposition and physical vapor deposition to deposit three layers of thin films on both sides of the substrate, and then place the processed substrate in substrate cassettes and loaded onto trays or conveyor systems to be processed, after which finished substrates are collected in substrate cassettes and turned over to enter another system.

Because each system has its own way of transporting substrates, the trays used by each system are often different, allowing dopants to contaminate substrates with each other during substrate processing. Moreover, in the daily management process, it is also necessary to ensure that the pallets used from one system to another are not mixed together, so it is necessary to operate to separate different substrate pallet groups, which greatly increases the inventory cost.

The purpose of the present invention is to provide a substrate processing system and method, which reduces the manufacturing cost and reduces the possibility of contamination by dopants during substrate processing.

To achieve the above object, the present invention provides a substrate processing system in a first aspect, comprising a submodule frame with openings, a tray, and a film. Wherein, the sub-module frame is movably arranged on the tray; the film is coupled to the sub-module frame and covers the opening, the film is provided with an installation opening, and the area of the installation opening is less than or equal to The area of the opening, the installation port is used for coupling the substrate.

Wherein, the area of the installation opening is smaller than the area of the substrate, and when the substrate is coupled with the thin film, the substrate covers the installation opening.

The beneficial effect of the substrate processing system provided by the present invention lies in that: by movably disposing the sub-module frame on the tray, it is convenient for the substrate processing system to realize flipping and switching between the upper surface and the lower surface of the substrate when processing the substrate. At the same time, it avoids the need to switch the substrate processing surface in the process room of the system to replace different trays, and does not need to place different trays in different categories, which reduces production costs and, more importantly, avoids contamination of the substrate.

Optionally, it also includes a transport track, a pallet loading station, a preheating station, a processing station, a cooling station and a pallet unloading station, the pallet loading station, the preheating station, the processing station, the cooling station and all The pallet unloading stations are arranged in sequence, and the transfer track is used to move the pallets provided with the substrates to the pallet loading station, the preheating station, the processing station, the cooling station and the A tray unloading station; wherein, the processing station includes several turning stations, and the turning stations are used to turn the submodule frame in the tray in the vacuum chamber of the turning station. The beneficial effect is that: by sequentially setting up the tray loading station, preheating station, processing station, cooling station and tray unloading station, the transfer track is realized to sequentially transfer the substrates to be processed to each process station in the system for processing. More importantly, the processing station includes a number of turning stations, the turning station is used to frame the sub-modules in the tray in the vacuum of the turning station Turning over in the chamber realizes the automatic turning and switching of the upper surface and the lower surface of the substrate, improves the efficiency of substrate processing, and avoids the possible pollution caused by replacing the tray when taking the substrate in and out.

Optionally, the processing station includes at least the PECVD station and the PVD station in an etching station, a plasma-enhanced chemical vapor deposition PECVD station, and a physical vapor deposition PVD station, and the etching station is used for processing the dry etching of the substrate; the PECVD station is used for PECVD deposition of the substrate; the PVD station is used for PVD deposition of the substrate; wherein, the etching station, the PECVD station and the PVD station are all equipped with the described flip station. The beneficial effect is that: by setting the turning station in the etching station, the PECVD station and the PVD station, the upper surface and the lower surface of the substrate can be switched in the working vacuum environment, without cooling the substrate out of the vacuum environment and reheating the substrate into the vacuum environment Among them, the waste of energy is reduced, the efficiency of processing the substrate is further improved, and the pollution that may be caused by replacing the tray when the substrate is taken in and out is avoided, and the production cost is reduced.

Optionally, the film is provided with several installation ports at intervals, and several of the installation ports are used to sequentially couple and set the substrate. When several of the installation ports are coupled to the substrate, the upper surface of the substrate and the submount The distance between the upper surface of the module frame and the distance between the lower surface of the substrate and the lower surface of the sub-module frame is equal. The beneficial effect is that a group of substrates can be processed, and the production efficiency is improved, and the distance between the upper surface of the substrate and the upper surface of the sub-module frame is equal to the distance between the lower surface of the substrate and the lower surface of the sub-module frame, ensuring that the upper surface of the substrate is processed Uniform consistency on surface and subsurface.

Optionally, the tray further includes a radio frequency gasket and a purging device, the radio frequency gasket forms a ground loop between the tray and the chamber body of the processing station, and the purging device is used to form an air wall to separate the substrate and the tray. The beneficial effect is that: by setting the purge device to separate the processing area and the tray of the substrate, the process gas is prevented from contaminating the tray and being deposited in unnecessary areas, and the equipment gasket is set to form a grounding loop, which improves the stability during production and processing sex.

Optionally, the system further includes a loading lock and an unloading lock, the loading lock is arranged between the tray loading station and the preheating station, the loading lock is used to remove the substrate from the atmosphere Environment sent to In a vacuum environment in the system; the unloading lock is provided between the processing station and the cooling station, and the unloading lock is used to transfer the substrate from the vacuum environment in the system to the atmospheric environment . The beneficial effect is that: by setting the loading lock and the unloading lock, the reaction chamber in the system is always in a vacuum environment, ensuring good conditions for production and processing, and improving the reliability of the system for processing substrates.

In a second aspect, the present invention provides a method for processing a substrate. Based on the above-mentioned system, the method includes: coupling the substrate to the installation port; sequentially forming a first I layer and an N-type ion layer on the upper surface of the substrate ; The overturning station overturns the submodule frame, and sequentially forms a second I layer and a P-type ion layer on the lower surface of the substrate.

The beneficial effect of the processing method of the substrate provided by the present invention is that: a unified tray is adopted, and by turning over the sub-module frame, the switching of the upper surface and the lower surface of the substrate is realized, and the first substrate is sequentially formed on the upper surface of the substrate. The I layer and the N type ion layer form the second I layer and the P type ion layer sequentially on the lower surface of the substrate, which improves the efficiency of processing the substrate and reduces the production cost.

Optionally, before sequentially forming the first I layer and the N-type ion layer on the upper surface of the substrate, the method includes: roughening the upper surface of the substrate and the lower surface of the substrate. The beneficial effect is that: the upper surface and the lower surface of the substrate are roughened, which improves the reliability of the subsequent processing of the substrate.

Optionally, the overturning station overturns the submodule frame, after sequentially forming the second I layer and the P-type ion layer on the lower surface of the substrate, including: forming a first conductive layer on the lower surface of the substrate ; the overturning station overturns the sub-module frame; forming a second conductive layer on the upper surface of the substrate. The beneficial effect is that the conductive layer is produced by turning over the upper surface and the lower surface of the substrate, which improves the production efficiency and reduces the possibility of polluting the substrate.

Optionally, after the second conductive layer is formed on the upper surface of the substrate, it further includes: forming a first bus bar connected between the first conductive layer and the lower surface of the film, The layer and the upper surface of the film form a communicating second bus bar. The beneficial effect is that by forming a bus bar and a second bus bar on the substrate and the film, it facilitates the generation of subsequent conductive lines.

Optionally, when forming a group of modules, a first conductive line is formed on the first bus bar, and a second conductive line is formed on the second bus bar. Or, when forming more than two groups of modules, more than two films are stacked in sequence, the films have a first side and a second side that are oppositely arranged, and the second side of the film on the top is stacked fit to the first edge of the lower film, and the first bus bar of the upper film forms a through hole with the second bus bar of the lower film, and the first A first conductive line is formed on the bus bar, and a second conductive line is formed on the second bus bar. The beneficial effect lies in: realizing the setting of conductive wires for one group of modules or more than two groups of modules. It is worth noting that, when two or more modules are formed in this way, the entire substrate is exposed to sunlight, which increases the light receiving area.

Optionally, a first polymer film and a first glass are sequentially disposed on the upper surface of the group of modules, and a second polymer film and second glass are sequentially disposed on the lower surface of the group of modules. Or, the first polymer film and the first glass are arranged sequentially on the upper surfaces of the two or more modules, and the second polymer film and the second glass are arranged sequentially on the lower surfaces of the two or more modules. The beneficial effect is that the manufacture of solar modules is realized.

Optionally, when forming a module of two or more modules, the upper film is glued to the lower film. The beneficial effect is that multiple thin films are connected by means of gluing connection, which is simple, does not need to use precision connecting wires to stack and weld the busbars, and will not affect the power generation surface.

Optionally, the first conductive layer is a first tin-doped indium oxide ITO layer, and the second conductive layer is a second tin-doped indium oxide ITO layer. The beneficial effect is that: the tin-doped indium oxide ITO layer is used as the first conductor The electric layer and the second conductive layer improve the reliability of the conduction of the substrate.

1: film

2: Submodule framework

3: Substrate

4: Push end

5: sealed end

10: Pallet loading station

23: Preheating station

24: Pressure buffer chamber

30: Flip Station

40: tray

41: RF Gasket

42: Purging device

50:Loading lock

60: Uninstall lock

70: Pallet unloading station

80: cooling station

103: The first bus bar

104: Second bus bar

105: first glass

106: second glass

1011: First polymer film

1021: second polymer film

211: The first former PECVD station

212: The second former PECVD station

213: First post-PECVD station

214: Second post-PECVD station

221: The first physical vapor deposition station

222: The second physical vapor deposition station

251: The first texturing room

252: Second Texturing Room

In order to make the above and other purposes, features, advantages and embodiments of the present invention more clearly understood, the accompanying drawings are described as follows: Fig. 1 is a schematic structural view of the substrate disclosed by the present invention being arranged on the module frame through a film; Fig. 2 is a schematic structural view of the pallet disclosed in the present invention; FIG. 3 is a cross-sectional view of the sub-module frame disclosed in the present invention after the substrate is installed; FIG. 4 is a system diagram of the substrate treated by the method of dry etching texturing disclosed in the present invention; FIG. 5 It is a system diagram of preparing solar cells by wet etching texturing method disclosed in the present invention; FIG. 6 is another system diagram of solar cells prepared by wet etching texturing method disclosed in the present invention; FIG. 7 is a PECVD method disclosed in the present invention The structural diagram of the working state of the station; FIG. 8 is a structural schematic diagram of the non-working state of the PECVD station disclosed by the present invention; FIG. 9 is a flow chart of the substrate processing method disclosed in the present invention; FIG. The structure schematic diagram of the group module including the front view and the side view; Fig. 11 is the structure diagram including the front view and the side view of the two groups of modules disclosed in the present invention; Fig. 12 is the structure diagram of the solar cell module disclosed in the present invention.

In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are part of the present invention Examples, not all examples. Based on the present invention Embodiments, all other embodiments obtained by persons of ordinary skill in the art without creative work, all belong to the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. The words "comprising" and the like used herein mean that the elements or items appearing before the word include the elements or items listed after the word and their equivalents, without excluding other elements or items.

At present, the process of heterojunction cell processing is broken down into three separate systems, each system has its own mode of transportation, so the trays used by each system cause substrates to be surface-treated in different systems, and dopants may vary. contaminate the substrate with each other. Moreover, in the daily management process, it is necessary to ensure that the pallets used from one system to another system are not mixed together, so it is necessary to separate different substrate pallet groups, which greatly increases the inventory cost and labor cost.

Aiming at the existing problems, an embodiment of the present invention provides a substrate processing system, as shown in FIG. 1 and FIG. 2 , the system includes a submodule frame 2 with an opening, a tray 40 , and a film 1 . Wherein, the sub-module frame 2 is movably arranged on the tray 40, the film 1 is coupled to the sub-module frame 2, and covers the opening, the film 1 is provided with an installation port, and the area of the installation port is smaller than or equal to the opening area of the film 1, and the film 1 The provided installation port is used for coupling the substrate 3 . In addition, the area of the installation opening is smaller than the area of the substrate 3 , and when the substrate 3 is coupled with the film 1 , the substrate 3 covers the installation opening of the film 1 .

It should be noted that, as shown in FIG. 3 , generally, a plurality of installation ports are arranged at intervals on the film 1, and the plurality of installation ports are used to couple and arrange the substrate 3 sequentially. The distance between the upper surface of the module frame 2 and the distance between the lower surface of the substrate 3 and the lower surface of the sub-module frame 2 is equal, a group of substrates 3 can be processed, and the production efficiency is improved, and the upper surface of the substrate 3 is the same as the upper surface of the sub-module frame 2 The distance is equal to the distance between the lower surface of the substrate 3 and the lower surface of the sub-module frame 2, ensuring uniformity when processing the upper and lower surfaces of the substrate 3.

In this embodiment, by movably disposing the submodule frame 2 on the tray 40 , it is convenient for the substrate 3 processing system to switch over the upper surface and the lower surface of the substrate 3 when processing the substrate 3 . at the same time It avoids the need to switch the processing surface of the substrate 3 and replace different trays 40 in the process chamber of the system, and does not need to place different trays 40 in different categories, which reduces production costs and, more importantly, avoids contamination of the substrate 3 .

Optionally, the system also transports rails, pallet loading station 10, preheating station 23, processing station, cooling station 80 and pallet unloading station 70, as shown in Fig. 4, pallet loading station 10, preheating station 23, processing station , the cooling station 80 and the pallet unloading station 70 are arranged in sequence, and the transport track is used to move the pallet 40 provided with the substrate 3 to the pallet loading station 10, the preheating station 23, the processing station, the cooling station 80 and the pallet unloading station 70 in turn. processing. It should be noted that the processing station includes a plurality of inverting stations 30 for inverting the submodule frame 2 in the tray 40 in the vacuum chamber of the inverting station 30 .

By arranging the tray loading station 10, preheating station 23, processing station, cooling station 80 and tray unloading station 70 in sequence, the transfer track is realized to transfer the substrates 3 to be processed to each process station in the system for processing. More importantly, the processing station includes a number of turning stations 30. The turning stations 30 are used to turn the submodule frame 2 in the tray 40 in the vacuum chamber of the turning station 30, so as to realize the automatic turning of the upper surface of the substrate 3. The flipping switch with the lower surface improves the processing efficiency of the substrate 3 and avoids possible pollution caused by replacing the tray 40 when the substrate 3 is brought in and taken out.

Optionally, the processing station includes at least an etching station, a plasma enhanced chemical vapor deposition PECVD station and a PECVD station and a PVD station in a physical vapor deposition PVD station, the etching station is used for dry etching the substrate 3, and the PECVD station is used for The substrate is deposited by 3PECVD, and the PVD station is used for 3PVD deposition on the substrate, wherein, the etching station, the PECVD station and the PVD station are all provided with an inversion station 30 .

By setting the turning station 30 in the etching station, the PECVD station and the PVD station, the upper surface and the lower surface of the substrate can be switched in the working vacuum environment, without cooling the substrate to exit the vacuum environment and reheating the substrate to enter the vacuum environment, reducing the Energy is wasted, the production cost is reduced, the efficiency of processing the substrate 3 is further improved, and the pollution that may be caused by replacing the tray 40 when the substrate 3 is taken in and taken out is avoided. It should be noted that, in this embodiment, dry etching is used for texturing, and the configuration of the etching station is to process the substrate 3 by the method of dry etching texturing, and the etching station is arranged between the preheating station 23 and the loading lock 50, etching The station includes a first texturing room 251 and a second texturing room 252, and a turning station 30 is arranged between the first texturing room 251 and the second texturing room 252, and the first texturing room 251 is used for substrate 3 The lower surface of the substrate 3 is roughened, the inversion station 30 is used to invert the substrate 3 , and the second texturing chamber 252 is used to roughen the upper surface of the substrate 3 . As shown in FIG. 5, FIG. 5 is a schematic structural diagram of a system using wet etching. It should be noted that when wet texturing is used, the substrate 3 will be textured in advance, so no etching station is configured in the system.

Optionally, as shown in FIG. 2 , the tray 40 also includes a radio frequency gasket 41 and a purging device 42. The radio frequency gasket 41 forms a ground loop between the tray 40 and the chamber body of the processing station, and the purging device 42 is used to form an air wall. The substrate 3 and the tray 40 are separated. The purge device 42 is used to separate the processing area of the substrate 3 from the tray 40 to prevent the process gas from contaminating the tray 40, and the RF gasket 41 is provided to form a ground loop, which improves the stability during production and processing.

Further, in order to ensure good conditions for production and processing and improve the reliability of the system for processing substrates, the system also includes a loading lock 50 and an unloading lock 60, and the loading lock 50 is arranged between the tray loading station 10 and the preheating station 23 , the loading lock 50 is used to transfer the substrate 3 from the atmospheric environment to the vacuum environment in the system, the unloading lock 60 is arranged between the processing station and the cooling station 80, and the unloading lock 60 is used to transfer the substrate 3 from the vacuum environment in the system Transmit to atmosphere. By setting the loading lock 50 and the unloading lock 60, the reaction chamber in the system is always in a vacuum environment.

In yet another embodiment disclosed by the present invention, a substrate 3 processing system is provided, as shown in FIG. Station 70 and transport mechanism (not shown). Wherein, the pallet loading station 10 is used for placing the pallet 40, and the pallet 40 is arranged on a transport mechanism, and the transport mechanism is used for moving the pallet 40 from the pallet loading station 10 to the processing station. The processing station includes an inversion station 30. When the tray 40 moves to the inversion station 30, the tray 40 will be overturned in the vacuum chamber in the inversion station 30 to realize the inversion conversion of the upper surface and the lower surface of the substrate 3. The processing station is used for Processing the substrate 3, and forming a first intrinsic amorphous silicon layer (first I layer) and An N-type ion layer, a second intrinsic amorphous silicon layer (second I layer) and a P-type ion layer are formed on the lower surface of the substrate 3 . The tray unloading station 70 is used for storing or unloading the processed substrate 3 , so as to facilitate subsequent processing of the substrate 3 .

Specifically, the processing station includes a plasma-enhanced chemical vapor deposition PECVD station, and the PECVD station further includes a first pre-PECVD station 211, a second pre-PECVD station 212, a first post-PECVD station 213 and a second post-PECVD station 214, sequentially Set the first front PECVD station 211, the second front PECVD station 212, the flipping station 30, the first rear PECVD station 213 and the second rear PECVD station 214, and first form the first I-layer and N-type ion layer on the upper surface of the substrate 3 Finally, the surface to be treated of the substrate 3 is rotated into the lower surface by the turning station 30, and then the second I layer and the P-type ion layer are formed on the lower surface.

It should be noted that, in some embodiments, as shown in FIG. The second front PECVD station 212 forms a first I layer and an N-type ion layer on the upper surface of the substrate 3 , and forms a second I layer and a P-type ion layer on the lower surface of the substrate 3 .

As shown in FIG. 7 and FIG. 8, when the tray 40 is moved to the PECVD station on the transport mechanism, it enters the working state, and the pushing end 4 of the PECVD station pushes the tray 40, so that the tray 40 and the sealing end 5 fit to form a reaction seal Cavity and grounding circuit, the reaction sealed chamber can accommodate the reaction gas, and the process is carried out on the surface of the substrate 3. When it enters the non-working state after completion, the push end 4 moves back, so that the tray 40 returns to the track of the transport mechanism and moves to the next step. station for processing.

By setting the inverting station 30 between the first pre-PECVD station 211, the second pre-PECVD station 212, the first post-PECVD station 213 and the second post-PECVD station 214, the substrate 3 in the tray 40 is placed on the upper surface by the inverting station 30. The flipping switch with the lower surface improves the processing efficiency of the substrate 3 and avoids the adverse effect caused when the tray 40 needs to be replaced.

Optionally, the processing station also includes a physical vapor deposition PVD station, and the PVD station further includes a first physical vapor deposition station 221 and a second physical vapor deposition station 222, and the first physical vapor deposition station 221 and the second physical vapor deposition station 221 The vapor deposition station 222 is sequentially arranged after the PECVD station. A turning station 30 is configured in the first Between the physical vapor deposition station 221 and the second physical vapor deposition station 222, the first physical vapor deposition station 221 is used to form the first conductive layer on the P-type ion layer, and the second physical vapor deposition station 222 is used for A second conductive layer is formed on the N-type ion layer. By configuring the inversion station 30 between the first physical vapor deposition station 221 and the second physical vapor deposition station 222 , the efficiency of forming the first conductive layer and the second conductive layer on the substrate 3 is improved.

In addition, the system also includes an unloading lock 60 and a loading lock 50. Since the processing station is a vacuum environment, and in order to ensure that the substrate 3 is transported without destroying the vacuum environment in the processing station, the loading lock 50 is set in the pallet loading station 10. Between the preheating station 23, it is used to ensure that the substrate 3 is transferred from the atmospheric environment to the vacuum environment in the processing station, so as to avoid destroying the vacuum environment in the processing station. The unloading lock 60 is arranged between the cooling station 80 and the processing station, for The substrate 3 is transferred from the vacuum environment in the processing station to the atmospheric environment, so as to ensure that the substrate 3 has a better working environment in the processing station, and further improve the reliability of the system for processing the substrate 3 .

Further, the processing station also includes a pressure buffer chamber 24, wherein the pressure buffer chamber 24 is arranged between the PECVD station and the PVD station, and the pressure buffer chamber 24 is used to adjust the atmospheric pressure of the substrate 3 entering the PVD station from the PECVD station, because the processing The individual process chambers within the station may have different pressures. The preheating station 23 is arranged between the load lock 50 and the PECVD, and is used for adjusting the temperature of the substrate 3 entering the PECVD station. By configuring the preheating station 23, the substrate 3 is heated in advance before entering the processing station, which improves the efficiency of the PECVD station when forming the intrinsic amorphous silicon layer and ion layer on the surface of the substrate 3, and ensures the reliability of the formation. The pressure buffer chamber 24 is arranged between the PECVD station and the PVD station to ensure the pressure requirement for the substrate 3 entering the PVD station, and further ensure the efficiency and reliability of forming the conductive layer on the substrate 3 .

It is worth noting that the cooling station 80 is located between the pallet unloading station 70 and the unloading lock 60. The cooling station 80 is used to cool the substrate 3 naturally through the atmosphere, and then move it to the pallet unloading station 70 through the transport mechanism to avoid the temperature of the substrate 3. Too high a safety hazard.

In another embodiment disclosed by the present invention, a method for processing a substrate is provided, which is based on the system disclosed in the above embodiments, as shown in FIG. 9 , the method includes:

S901: Coupling the substrate 3 to the installation port.

In this step, it should be noted that if wet etching is used for texturing, the upper surface of the substrate and the lower surface of the substrate need to be roughened in advance, and then the processed substrate is coupled to the mounting port.

S902: sequentially forming a first I layer and an N-type ion layer on the upper surface of the substrate.

Before this step, the upper surface of the substrate and the lower surface of the substrate are roughened. If the dry etching method is used for texturing, before the first I layer and the N-type ion layer are sequentially formed on the upper surface of the substrate, the substrate is moved by the tray in advance. to etch station for processing.

S903: the overturning station overturns the submodule frame, and sequentially forms a second I layer and a P-type ion layer on the lower surface of the substrate.

S904: Form a first conductive layer on the lower surface of the substrate, and turn over the submodule frame at the turning station to form a second conductive layer on the upper surface of the substrate.

In this step, a first conductive layer is first formed on the lower surface of the substrate, and then the sub-module frame is turned over by an inversion station to form a second conductive layer on the upper surface of the substrate.

S905: Form a connected first bus bar on the lower surface of the first conductive layer and the film, and form a connected second bus bar on the upper surface of the second conductive layer and the film.

S906: Form a first conductive line on the first bus bar, and form a second conductive line on the second bus bar.

In this step, with specific reference to FIGS. 10 to 11 , it should be noted that when producing a set of modules, the first conductive lines are formed on the first bus bar 103 , and the second conductive lines are formed on the second bus bar 104 . line. If it is desired to produce more than two sets of modules, more than two films 1 are stacked in sequence. The film 1 has a first side and a second side oppositely arranged, and the second side of the film 1 on the top is superimposed on the film below. 1, and the first bus bar 103 of the upper film 1 forms a through hole with the second bus bar 104 of the lower film 1, the first conductive line is formed on the first bus bar 103, and the second A second conductive line is formed on the bus bar 104 .

S907: sequentially disposing the first polymer film and the first glass on the upper surface of the substrate, and sequentially disposing the second polymer film and the second glass on the lower surface of the substrate.

In this step, as shown in FIG. 12, the first polymer film 1011 and the first glass 105 are sequentially arranged on the upper surface of the group of modules, and the second polymer film 1011 is sequentially arranged on the lower surface of the group of modules. film 1021 and second glass 106 . Or, the first polymer film 1011 and the first glass 105 are sequentially arranged on the upper surface of the two or more modules, and the second polymer film 1021 and the second glass are arranged in sequence on the lower surface of the two or more modules. 106.

It should be noted that the first conductive layer is the first tin-doped indium oxide ITO layer, and the second conductive layer is the second tin-doped indium oxide ITO layer. The underlying film is glued together in a simple way that does not interfere with the generating surface.

The above is only the specific implementation of the embodiment of the application, but the protection scope of the embodiment of the application is not limited thereto, and any changes or replacements within the technical scope disclosed in the embodiment of the application shall be covered by this application. Within the scope of protection of the application examples. Therefore, the protection scope of the embodiments of the present application should be based on the protection scope of the claims.

10: Pallet loading station

23: Preheating station

24: Pressure buffer chamber

30: Flip Station

40: tray

50:Loading lock

60: Uninstall lock

70: Pallet unloading station

80: cooling station

211: The first former PECVD station

212: The second former PECVD station

213: First post-PECVD station

214: Second post-PECVD station

221: The first physical vapor deposition station

222: The second physical vapor deposition station

251: The first texturing room

252: Second Texturing Room

Claims (14)

A substrate processing system, comprising: a submodule frame with an opening, a tray, and a film; the submodule frame is movably arranged on the tray; the film is coupled to the submodule frame and covers the Opening, the film is provided with an installation opening, the area of the installation opening is less than or equal to the area of the opening, and the installation opening is used to couple the substrate; wherein, the area of the installation opening is smaller than the area of the substrate, when the When the substrate is coupled with the thin film, the substrate covers the installation opening. The substrate processing system according to claim 1, further comprising a transport track, a tray loading station, a preheating station, a processing station, a cooling station, and a tray unloading station; the tray loading station, the preheating station, and the processing station , the cooling station and the pallet unloading station are arranged in sequence, and the transport track is used to move the pallet provided with the substrate to the pallet loading station, the preheating station, the processing station, the cooling station and the pallet unloading station; wherein the processing station includes a plurality of turning stations for placing the submodule frame in the tray in the vacuum chamber of the turning station to flip. The substrate processing system according to claim 2, wherein the processing station includes at least the PECVD station and the PVD station in an etching station, a plasma-enhanced chemical vapor deposition PECVD station, and a physical vapor deposition PVD station; The etching station is used for dry etching the substrate; the PECVD station is used for PECVD deposition of the substrate; the PVD station is used for PVD deposition of the substrate; wherein, the etching station, the PECVD station The turning station is arranged in the PVD station. The substrate processing system according to claim 1, wherein the thin film is provided with several installation ports at intervals, and the several installation ports are used to sequentially couple and set the substrate; when several of the installation ports are coupled to set the substrate, The distance between the upper surface of the substrate and the upper surface of the sub-module frame is equal to the distance between the lower surface of the substrate and the lower surface of the sub-module frame. The substrate processing system according to claim 2 or 3, wherein the tray further includes a radio frequency gasket and a purging device, the radio frequency gasket forms a ground loop between the tray and the chamber body of the processing station, the The purging device is used to form an air wall separating the substrate and the tray. The substrate processing system according to claim 2 or 3, further comprising a loading lock and an unloading lock; the loading lock is arranged between the tray loading station and the preheating station, and the loading lock is used for transferring the substrate from an atmospheric environment to a vacuum environment in the system; the unload lock is provided between the processing station and the cooling station, the unload lock is used to remove the substrate from the system The vacuum environment in the air is transferred to the atmospheric environment. A method for processing a substrate, based on the system described in claim 2 or 3 above, the method comprising: coupling the substrate to the mounting port; sequentially forming a first I-layer and an N-type ion layer on the upper surface of the substrate; The overturning station overturns the frame of the submodule, and sequentially forms a second I layer and a P-type ion layer on the lower surface of the substrate. The substrate processing method according to claim 7, wherein, before sequentially forming the first I layer and the N-type ion layer on the upper surface of the substrate, it includes: performing a process on the upper surface of the substrate and the lower surface of the substrate Roughening treatment. The substrate processing method according to claim 8, wherein, the inverting station inverts the submodule frame, after sequentially forming the second I layer and the P-type ion layer on the lower surface of the substrate, including: A first conductive layer is formed on the lower surface of the substrate; the overturning station turns over the sub-module frame; and a second conductive layer is formed on the upper surface of the substrate. The substrate processing method according to claim 9, wherein, after forming the second conductive layer on the upper surface of the substrate, further comprising: forming a connected first bus on the first conductive layer and the lower surface of the film a bar, forming a second bus bar in communication with the upper surface of the second conductive layer and the film. The substrate processing method according to claim 10, wherein when forming a group of modules, a first conductive line is formed on the first bus bar, and a second conductive line is formed on the second bus bar; or , when forming more than two groups of modules, stack more than two films in sequence, the films have a first side and a second side oppositely arranged, and the second sides of the films above are superimposed On the first edge of the lower film, the first bus bar of the upper film and the second bus bar of the lower film form a through hole, and the first bus bar of the lower film forms a through hole. A first conductive line is formed on the bus bar, and a second conductive line is formed on the second bus bar. The substrate processing method according to claim 11, wherein the first polymer film and the first glass are sequentially arranged on the upper surface of the group of modules, and the second polymer film is sequentially arranged on the lower surface of the group of modules. material film and second glass; or, the first polymer film and the first glass are sequentially arranged on the upper surface of the two or more modules, and the second polymer film is arranged successively on the lower surface of the two or more modules and second glass. The substrate processing method according to claim 12, wherein when forming the modules of the two or more modules, the upper film is glued to the lower film. The substrate processing method according to claim 13, wherein the first conductive layer is a first tin-doped indium oxide ITO layer, and the second conductive layer is a second tin-doped indium oxide ITO layer.

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