CN114005775A - Substrate processing system and method - Google Patents

Substrate processing system and method Download PDF

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Publication number
CN114005775A
CN114005775A CN202111276826.7A CN202111276826A CN114005775A CN 114005775 A CN114005775 A CN 114005775A CN 202111276826 A CN202111276826 A CN 202111276826A CN 114005775 A CN114005775 A CN 114005775A
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CN
China
Prior art keywords
station
substrate
film
tray
processing
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Pending
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CN202111276826.7A
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Chinese (zh)
Inventor
雷仲礼
金浩
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Dehong Semiconductor Equipment Zhejiang Co ltd
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Dehong Semiconductor Equipment Zhejiang Co ltd
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Priority to CN202111276826.7A priority Critical patent/CN114005775A/en
Publication of CN114005775A publication Critical patent/CN114005775A/en
Priority to TW111106130A priority patent/TWI802280B/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a processing system and a processing method of a substrate. Wherein the sub-module frame is movably arranged on the tray; the film is coupled to the sub-module frame and covers the opening, the film is provided with a mounting opening, the area of the mounting opening is smaller than or equal to that of the opening, and the mounting opening is used for coupling a substrate; wherein the area of the mounting opening is smaller than the area of the substrate, the substrate covering the mounting opening when the substrate is coupled with the film. The sub-module frame is movably arranged on the tray, so that the substrate processing system can conveniently realize the turnover switching of the upper surface and the lower surface of the substrate when processing the substrate. Meanwhile, the problem that different trays are replaced by switching the substrate processing surfaces in a process chamber of the system is avoided, the different trays do not need to be placed in a classified mode, the production cost is reduced, and more importantly, the pollution to the substrates is avoided.

Description

Substrate processing system and method
Technical Field
The invention relates to the technical field of photovoltaic and solar cells, in particular to a system and a method for processing a substrate.
Background
Currently, the process of heterojunction cell processing is broken down into three separate systems. Such as processing systems for processing substrates, require textured surfaces on both sides of the substrate and deposition of three layers of thin film on both sides of the substrate using plasma enhanced chemical vapor deposition and physical vapor deposition, then placing the processed substrate in a cassette and loading onto a tray or conveyor system to be processed, and then collecting the completed substrate in a cassette and flipping into another system.
Since each system has its own way of transporting substrates, the trays used by each system are often different, so that the dopants can contaminate the substrates with each other during processing of the substrates. In addition, in the daily management process, trays used in entering from one system to another system are not mixed together, so that different substrate tray groups are required to be separated, and the inventory cost is greatly increased.
Disclosure of Invention
The invention aims to provide a substrate processing system and a substrate processing method, which reduce the production and manufacturing cost and reduce the possibility of being polluted by a dopant during substrate processing.
To achieve the above object, in a first aspect, the present invention provides a substrate processing system including a sub-module frame provided with an opening, a tray, and a film. Wherein the sub-module frame is movably arranged on the tray; the film is coupled to the sub-module frame and covers the opening, the film is provided with a mounting opening, the area of the mounting opening is smaller than or equal to that of the opening, and the mounting opening is used for coupling a substrate; wherein the area of the mounting opening is smaller than the area of the substrate, the substrate covering the mounting opening when the substrate is coupled with the film.
The substrate processing system provided by the invention has the beneficial effects that: the sub-module frame is movably arranged on the tray, so that the substrate processing system can conveniently realize the turnover switching of the upper surface and the lower surface of the substrate when processing the substrate. Meanwhile, the problem that different trays are replaced by switching the substrate processing surfaces in a process chamber of the system is avoided, the different trays do not need to be placed in a classified mode, the production cost is reduced, and more importantly, the pollution to the substrates is avoided.
Optionally, the substrate processing device further comprises a conveying track, a tray loading station, a preheating station, a processing station, a cooling station and a tray unloading station, wherein the tray loading station, the preheating station, the processing station, the cooling station and the tray unloading station are sequentially arranged, and the conveying track is used for sequentially moving the tray provided with the substrate to the tray loading station, the preheating station, the processing station, the cooling station and the tray unloading station; wherein the processing stations include a plurality of flipping stations for flipping the sub-module frames in the trays within a vacuum chamber of the flipping stations. The beneficial effects are that: the tray loading station, the preheating station, the processing station, the cooling station and the tray unloading station are sequentially arranged, so that the substrates to be processed are sequentially conveyed into each process station in the system by the conveying rail for processing. More importantly, including a plurality of upset stations in the processing station, the upset station is arranged in overturning the sub-module frame in the tray in the vacuum chamber of upset station, realizes automatic upset switching with substrate upper surface and lower surface, has improved the efficiency that the substrate was handled, and avoids taking in the pollution that replacement tray probably brought when taking out the substrate.
Optionally, the processing stations include at least one of an etching station for dry etching the substrate, a PECVD station and a PVD station of a Plasma Enhanced Chemical Vapor Deposition (PECVD) station and a Physical Vapor Deposition (PVD) station; the PECVD station is used for carrying out PECVD deposition on the substrate; the PVD station is used for PVD deposition on the substrate; wherein the etching station, the PECVD station and the PVD station are all provided with the overturning station. The beneficial effects are that: through all setting up the upset station in etching station, PECVD station and PVD station, realize switching the upper surface and the lower surface of base plate in the vacuum environment of work, need not to withdraw from the vacuum environment and reheat base plate gets into the vacuum environment through cooling the base plate, reduced the energy waste, further improved the efficiency of handling the substrate, and avoided taking in the substrate and taken out the pollution that replacement tray probably brought, reduced manufacturing cost.
Optionally, a plurality of mounting ports are formed in the film at intervals, the mounting ports are used for sequentially coupling the substrate, and when the mounting ports are coupled with the substrate, the distance between the upper surface of the substrate and the upper surface of the sub-module frame is equal to the distance between the lower surface of the substrate and the lower surface of the sub-module frame. The beneficial effects are that: the distance between the upper surface of the substrate and the upper surface of the sub-module frame is equal to the distance between the lower surface of the substrate and the lower surface of the sub-module frame, so that the uniformity of the upper surface and the lower surface of the substrate can be ensured.
Optionally, the tray further comprises a radio frequency gasket for forming a ground loop between the tray and the chamber body of the processing station, and a purging device for forming a gas wall for separating the substrate and the tray. The beneficial effects are that: the purging device is used for separating the processing area and the tray of the substrate, so that process gas is prevented from polluting the tray and depositing in unnecessary areas, and the equipment gasket is arranged to form a grounding loop, so that the stability in production and processing is improved.
Optionally, the system further comprises a load lock and an unload lock, the load lock disposed between the tray loading station and the pre-heating station, the load lock for transferring the substrate from an atmospheric environment to a vacuum environment in the system; the unload lock is disposed between the processing station and the cooling station, the unload lock being configured to transfer the substrate from a vacuum environment to an atmospheric environment in the system. The beneficial effects are that: by arranging the loading lock and the unloading lock, the reaction chamber in the system is always in a vacuum environment, good conditions of production and treatment are guaranteed, and the reliability of the system for treating the substrate is improved.
In a second aspect, the present invention provides a method for processing a substrate, which comprises, based on the above system:
coupling a substrate to the mounting opening; sequentially forming a first I layer and an N-type ion layer on the upper surface of the substrate; and the overturning station overturns the sub-module frame, and a second I layer and a P-type ion layer are sequentially formed on the lower surface of the substrate.
The substrate processing method provided by the invention has the beneficial effects that: adopt unified tray, and through overturning to submodule frame, realized the switching to substrate upper surface and lower surface, accomplish and form first I layer and N type ion layer in proper order at the upper surface of substrate, form second I layer and P type ion layer in proper order at the lower surface of substrate, improved the efficiency of handling the substrate, reduced manufacturing cost.
Optionally, before the sequentially forming the first I layer and the N-type ion layer on the upper surface of the substrate, the method includes: texturing the upper surface of the substrate and the lower surface of the substrate. The beneficial effects are that: the texturing processing is carried out on the upper surface and the lower surface of the substrate, so that the reliability of the subsequently processed substrate is improved.
Optionally, the flipping station flips the sub-module frame, and after a second I layer and a P-type ion layer are sequentially formed on the lower surface of the substrate, the flipping station includes: forming a first conductive layer on the lower surface of the substrate; the overturning station overturns the sub-module frame; and forming a second conductive layer on the upper surface of the substrate. The beneficial effects are that: the conductive layers are produced on the upper surface and the lower surface of the substrate through the overturning station, so that the production efficiency is improved, and the possibility of substrate pollution is reduced.
Optionally, after forming the second conductive layer on the upper surface of the substrate, the method further includes: and forming a first bus bar communicated with the lower surface of the film on the first conductive layer, and forming a second bus bar communicated with the upper surface of the film on the second conductive layer. The beneficial effects are that: by forming a bus bar and a second bus bar on the substrate and the film, the subsequent formation of the conductive line is facilitated.
Optionally, when forming a set of modules, a first conductive line is formed on the first bus bar and a second conductive line is formed on the second bus bar. Or, when more than two groups of modules are formed, more than two films are stacked in sequence, each film is provided with a first edge and a second edge which are arranged oppositely, the second edge of the film positioned above is overlapped with the first edge of the film positioned below, the first bus bar of the film positioned above and the second bus bar of the film positioned below form a through hole, a first conductive wire is formed on the first bus bar, and a second conductive wire is formed on the second bus bar. The beneficial effects are that: the arrangement of the conducting wires of one group of modules or more than two groups of modules is realized. It is worth noting that when more than two groups of modules are formed in this way, the whole substrate is exposed to the sun, and the light receiving area is increased.
Optionally, a first polymer film and a first glass are sequentially disposed on the upper surfaces of the group of modules, and a second polymer film and a second glass are sequentially disposed on the lower surfaces of the group of modules. Or a first polymer film and first glass are sequentially arranged on the upper surfaces of the more than two groups of modules, and a second polymer film and second glass are sequentially arranged on the lower surfaces of the more than two groups of modules. The beneficial effects are that: the manufacture of the solar module is realized.
Optionally, when the modules of the two or more groups are formed, the film located above is bonded to the film located below by gluing. The beneficial effects are that: the connection of a plurality of films is realized through the form of gluing connection, and the connection mode is simple, does not need to use accurate connecting wires to stack up the welding to the generating line, can not influence the electricity generation surface.
Optionally, the first conductive layer is a first tin-doped indium oxide ITO layer, and the second conductive layer is a second tin-doped indium oxide ITO layer. The beneficial effects are that: the tin-doped indium oxide ITO layer is used as the first conducting layer and the second conducting layer, so that the conducting reliability of the substrate is improved.
Drawings
FIG. 1 is a schematic structural diagram of a substrate disposed on a module frame through a film according to the present disclosure;
FIG. 2 is a schematic structural view of a tray disclosed in the present invention;
FIG. 3 is a cross-sectional view of a sub-module frame of the present disclosure after mounting a substrate thereto;
FIG. 4 is a diagram of a system for processing a substrate using a dry etching texturing process according to the present disclosure;
FIG. 5 is a system diagram of a solar cell fabricated by the wet texture texturing method according to the present disclosure;
FIG. 6 is a system diagram illustrating another method of wet texture texturing to fabricate a solar cell according to the present disclosure;
FIG. 7 is a schematic structural view of a PECVD station according to the present disclosure in an operating state;
FIG. 8 is a schematic non-operational view of a PECVD station according to the present disclosure;
FIG. 9 is a flow chart of a method of processing a substrate as disclosed herein;
FIG. 10 is a schematic diagram of a set of modules including a front view and a side view according to the present disclosure;
FIG. 11 is a schematic structural view of a two-pack module including a front view and a side view according to the present disclosure;
fig. 12 is a schematic structural diagram of a solar cell module disclosed in the present invention.
Reference numerals:
the film comprises a film 1, a sub-module frame 2, a substrate 3, a pushing end 4 and a sealing end 5;
a tray loading station 10; a first front PECVD station 211, a second front PECVD station 212, a first back PECVD station 213, a second back PECVD station 214, a first physical vapor deposition station 221, a second physical vapor deposition station 222, a preheating station 23, a pressure buffer chamber 24, a first texturing chamber 251, and a second texturing chamber 252; a flipping station 30; a tray 40, a radio frequency gasket 41 and a purging device 42; a load lock 50; the lock 60 is unloaded; a tray unloading station 70, a cooling station 80;
a first polymer film 101, a second polymer film 102, a first bus bar 103, a second bus bar 104, a first glass 105, a second glass 106.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and similar words are intended to mean that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items.
Currently, the process of heterojunction cell processing is broken down into three separate systems, each with its own mode of transport, so that the trays used in each system can contaminate the substrates with each other as they are surface processed in different systems. In addition, in the daily management process, trays used in entering from one system to another system are not mixed together, so that different substrate tray sets are required to be separated, and the inventory cost and the labor cost are greatly increased.
In view of the problems that exist at present, an embodiment of the present invention provides a substrate processing system, which is shown in fig. 1 and 2, and includes a sub-module frame 2 provided with an opening, a tray 40, and a film 1. The sub-module frame 2 is movably arranged on the tray 40, the film 1 is coupled with the sub-module frame 2 and covers the opening, the film 1 is provided with a mounting opening, the area of the mounting opening is smaller than or equal to the area of the opening of the film 1, and the mounting opening arranged on the film 1 is used for coupling the substrate 3. In addition, the area of the mounting opening is smaller than that of the substrate 3, and the substrate 3 covers the mounting opening of the film 1 when the substrate 3 is coupled with the film 1.
It should be noted that, as shown in fig. 3, a plurality of mounting ports are generally arranged on the film 1 at intervals, the plurality of mounting ports are used for sequentially coupling and setting the substrates 3, when the plurality of mounting ports couple and set the substrates 3, the distance between the upper surface of the substrate 3 and the upper surface of the sub-module frame 2 is equal to the distance between the lower surface of the substrate 3 and the lower surface of the sub-module frame 2, a group of substrates 3 can be processed, so that the production efficiency is improved, and the distance between the upper surface of the substrate 3 and the upper surface of the sub-module frame 2 is equal to the distance between the lower surface of the substrate 3 and the lower surface of the sub-module frame 2, so as to ensure the uniformity when the upper surface and the lower surface of the substrate 3 are processed.
In the embodiment, the sub-module frame 2 is movably arranged on the tray 40, so that the substrate 3 processing system can conveniently realize the turnover switching of the upper surface and the lower surface of the substrate 3 when processing the substrate 3. Meanwhile, the problem that different trays 40 are replaced by switching the processing surfaces of the substrates 3 in a process chamber of the system is avoided, the different trays 40 do not need to be placed in a classified mode, the production cost is reduced, and more importantly, the pollution to the substrates 3 is avoided.
Optionally, the system further includes a transfer track, a tray loading station 10, a preheating station 23, a processing station, a cooling station 80, and a tray unloading station 70, as shown in fig. 4, the tray loading station 10, the preheating station 23, the processing station, the cooling station 80, and the tray unloading station 70 are sequentially disposed, and the transfer track is used to sequentially move the tray 40 provided with the substrate 3 into the tray loading station 10, the preheating station 23, the processing station, the cooling station 80, and the tray unloading station 70 for processing. It should be noted that the processing stations include a plurality of flipping stations 30, and the plurality of flipping stations 30 are used for flipping the sub-module frames 2 in the tray 40 in the vacuum chamber of the flipping station 30.
By arranging the tray loading station 10, the preheating station 23, the processing station, the cooling station 80 and the tray unloading station 70 in sequence, the transfer rail is realized to sequentially transfer the substrates 3 to be processed into each process station in the system for processing. More importantly, the processing station comprises a plurality of overturning stations 30, and the overturning stations 30 are used for overturning the sub-module frames 2 in the tray 40 in the vacuum chamber of the overturning stations 30, so that the automatic overturning switching of the upper surface and the lower surface of the substrate 3 is realized, the processing efficiency of the substrate 3 is improved, and the possible pollution caused by replacing the tray 40 when the substrate 3 is taken in and out is avoided.
Optionally, the processing stations at least include a PECVD station and a PVD station of an etching station, a plasma enhanced chemical vapor deposition PECVD station and a physical vapor deposition PVD station, the etching station is used for dry etching of the substrate 3, the PECVD station is used for PECVD deposition of the substrate 3, and the PVD station is used for PVD deposition of the substrate 3, wherein the etching station, the PECVD station and the PVD station are all provided with the flipping station 30 therein.
By arranging the turning stations 30 in the etching station, the PECVD station and the PVD station, the upper surface and the lower surface of the substrate can be switched in the working vacuum environment without cooling the substrate to exit the vacuum environment and reheating the substrate to enter the vacuum environment, so that the energy waste is reduced, the production cost is reduced, the efficiency of processing the substrate 3 is further improved, and the pollution possibly caused by replacing the tray 40 when the substrate 3 is taken out is avoided. It should be noted that in the present embodiment, dry etching texturing is adopted, the etching station is configured to process the substrate 3 by using a dry etching texturing method, the etching station is configured between the preheating station 23 and the loading lock 50, the etching station comprises a first texturing chamber 251 and a second texturing chamber 252, a turning station 30 is configured between the first texturing chamber 251 and the second texturing chamber 252, the first texturing chamber 251 is used for texturing the lower surface of the substrate 3, the turning station 30 is used for turning the substrate 3, and the second texturing chamber 252 is used for texturing the upper surface of the substrate 3. Referring to fig. 5, fig. 5 is a schematic structural diagram of a system using wet etching, and it should be noted that when wet etching is used, the etching process is performed on the substrate 3 in advance, so that no etching station is configured in the system.
Optionally, and with particular reference to fig. 2, the tray 40 further comprises a radio frequency gasket 41 and a purging device 42, the radio frequency gasket 41 forming a ground circuit between the tray 40 and the chamber body of the processing station, the purging device 42 being adapted to form a gas wall separating the substrate 3 from the tray 40. The purging device 42 is arranged for separating the processing area of the substrate 3 from the tray 40, so that the tray 40 is prevented from being polluted by the process gas, and the radio frequency gasket 41 is arranged to form a grounding loop, so that the stability in production and processing is improved.
Further, in order to ensure good conditions for the production process and to improve the reliability of the system for processing the substrates, the system further comprises a load lock 50 and an unload lock 60, the load lock 50 is disposed between the tray loading station 10 and the preheating station 23, the load lock 50 is used for transferring the substrates 3 from the atmosphere to the vacuum environment in the system, the unload lock 60 is disposed between the processing station and the cooling station 80, and the unload lock 60 is used for transferring the substrates 3 from the vacuum environment in the system to the atmosphere. By providing the load lock 50 and the unload lock 60, the reaction chamber in the system is always in a vacuum environment.
In yet another embodiment of the present disclosure, a system for processing substrates 3 is provided, as shown in fig. 6, which includes a tray loading station 10, a preheating station 23, a processing station, trays 40, a cooling station 80, and a tray unloading station 70 and a transport mechanism (not shown). Wherein the tray loading station 10 is used for placing the tray 40, the tray 40 is arranged on a transportation mechanism, and the transportation mechanism is used for moving the tray 40 from the tray loading station 10 to the processing station. The processing station includes an inversion station 30, and when the tray 40 moves to the inversion station 30, the tray 40 is inverted in the vacuum chamber of the inversion station 30 to perform inversion transformation of the upper surface and the lower surface of the substrate 3, and the processing station is used to process the substrate 3 and form a first intrinsic amorphous silicon layer (first I layer) and an N-type ion layer on the upper surface of the substrate 3 and a second intrinsic amorphous silicon layer (second I layer) and a P-type ion layer on the lower surface of the substrate 3. The tray unloading station 7070 is used to store or unload the processed substrates 3, facilitating the subsequent processing of the substrates 3.
Specifically, the processing station includes a plasma enhanced chemical vapor deposition PECVD station, the PECVD station further includes a first front PECVD station 211, a second front PECVD station 212, a first rear PECVD station 213, and a second rear PECVD station 214, the first front PECVD station 211, the second front PECVD station 212, the turning station 30, the first rear PECVD station 213, and the second rear PECVD station 214 are sequentially disposed, after a first I layer and an N-type ion layer are formed on the upper surface of the substrate 3, the surface to be processed of the substrate 3 is rotated into a lower surface through the turning station 30, and then a rear second I layer and a P-type ion layer are formed on the lower surface.
It should be noted that, in some embodiments, referring to fig. 5, a first I layer and an N-type ion layer are formed on the upper surface of the substrate 3 and a second I layer and a P-type ion layer are formed on the lower surface of the substrate 3 by sequentially disposing the first front PECVD station 211, the inversion station 30, the first rear PECVD station 213, the second rear PECVD station 214, the inversion station 30, and the second front PECVD station 212.
Referring to fig. 7 and 8, when the tray 40 is moved to the PECVD station on the transport mechanism, the PECVD station enters a working state, the pushing end 4 of the PECVD station pushes the tray 40 to make the tray 40 and the sealing end 5 fit together to form a reaction sealed cavity and a grounding loop, the reaction sealed cavity can contain reaction gas, the surface of the substrate 3 is processed, and when the PECVD station enters a non-working state after completion, the pushing end 4 moves back to make the tray 40 return to the track of the transport mechanism to move to the next station for processing.
By arranging the turning station 30 among the first front PECVD station 211, the second front PECVD station 212, the first rear PECVD station 213 and the second rear PECVD station 214, the turning station 30 switches the upper surface and the lower surface of the substrate 3 in the tray 40, so that the processing efficiency of the substrate 3 is improved, and the adverse effect caused when the tray 40 needs to be replaced is avoided.
Optionally, the processing stations further comprise a PVD station, and the PVD station further comprises a first PVD station 221 and a second PVD station 222, and the first PVD station 221 and the second PVD station 222 are sequentially disposed after the PECVD station. One flipping station 30 is disposed between a first pvd station 221 and a second pvd station 222, the first pvd station 221 for forming a first conductive layer on the P-type ion layer and the second pvd station 222 for forming a second conductive layer on the N-type ion layer. By disposing the flipping station 30 between the first physical vapor deposition station 221 and the second physical vapor deposition station 222, the efficiency of forming the first conductive layer and the second conductive layer on the substrate 3 is improved.
In addition, the system further comprises an unloading lock 60 and a loading lock 50, wherein the loading lock 50 is arranged between the tray loading station 10 and the preheating station 23 for ensuring that the substrates 3 are transferred from the atmospheric environment to the vacuum environment in the processing station and the vacuum environment in the processing station is not destroyed due to the vacuum environment in the processing station and the substrates 3 are not destroyed during transportation, and the unloading lock 60 is arranged between the cooling station 80 and the processing station for transferring the substrates 3 from the vacuum environment in the processing station to the atmospheric environment, so that the substrates 3 have a better working environment in the processing station and the reliability of the system for processing the substrates 3 is further improved.
Further, the processing station also comprises a pressure buffer chamber 24, wherein the pressure buffer chamber 24 is provided between the PECVD station and the PVD station, and the pressure buffer chamber 24 is used for adjusting the atmospheric pressure of the substrate 3 entering the PVD station from the PECVD station, since the pressure of the individual processing chambers in the processing stations may be different. A preheat station 23 is provided between the load lock 50 and the PECVD chamber for adjusting the temperature of the substrates 3 entering the PECVD chamber. By configuring the preheating station 23, the substrate 3 is heated in advance before entering the processing station, so that the efficiency of the PECVD station in forming an intrinsic amorphous silicon layer and an ion layer on the surface of the substrate 3 is improved, and the forming reliability is ensured. The pressure buffer chamber 24 is arranged between the PECVD station and the PVD station, so that the pressure requirement of the substrate 3 entering the PVD station is ensured, and the efficiency and the reliability of forming the conductive layer on the substrate 3 are further ensured.
It should be noted that the cooling station 80 is disposed between the tray unloading station 70 and the unloading lock 60, and the cooling station 80 is used to naturally cool the substrate 3 through the atmosphere and then move the substrate into the tray unloading station 70 through the transportation mechanism, so as to avoid the safety hazard caused by the over-temperature of the substrate 3.
In another embodiment disclosed in the present invention, there is provided a method for processing a substrate, the method being based on the system disclosed in the above embodiment, and referring to fig. 9, the method comprising:
s901: the substrate 3 is coupled to the mounting opening.
In this step, it should be noted that, if wet etching is used for texturing, texturing needs to be performed on the upper surface of the substrate and the lower surface of the substrate in advance, and then the processed substrate needs to be coupled to the mounting opening.
S902: and sequentially forming a first I layer and an N-type ion layer on the upper surface of the substrate.
Before the step, texturing processing is carried out on the upper surface of the substrate and the lower surface of the substrate, and if dry etching is adopted for texturing, the substrate is moved to an etching station for processing through a tray in advance before a first I layer and an N-type ion layer are sequentially formed on the upper surface of the substrate.
S903: and the overturning station overturns the sub-module frame, and a second I layer and a P-type ion layer are sequentially formed on the lower surface of the substrate.
S904: and forming a first conductive layer on the lower surface of the substrate, overturning the sub-module frame by the overturning station, and forming a second conductive layer on the upper surface of the substrate.
In the step, a first conductive layer is formed on the lower surface of the substrate, and then the sub-module frame is turned over by the turning station, and a second conductive layer is formed on the upper surface of the substrate.
S905: and forming a first bus bar communicated with the lower surface of the film on the first conductive layer, and forming a second bus bar communicated with the upper surface of the film on the second conductive layer.
S906: forming a first conductive line on the first bus bar and a second conductive line on the second bus bar.
In this step, as shown in fig. 10 to 11, it should be noted that, when a set of modules is produced, a first conductive line may be formed on the first bus bar 103, and a second conductive line may be formed on the second bus bar 104. When more than two groups of modules are produced, more than two films 1 are stacked in sequence, the films 1 are provided with a first side and a second side which are arranged oppositely, the second side of the film 1 positioned on the upper side is overlapped with the first side of the film 1 positioned on the lower side, the first bus bar 103 of the film 1 positioned on the upper side and the second bus bar 104 of the film 1 positioned on the lower side form a through hole, a first conductive wire is formed on the first bus bar 103, and a second conductive wire is formed on the second bus bar 104.
S907: a first polymer film and first glass are sequentially arranged on the upper surface of the substrate, and a second polymer film and second glass are sequentially arranged on the lower surface of the substrate.
In this step, as shown in fig. 12, a first polymer film 1011 and a first glass 105 are sequentially disposed on the upper surface of the set of modules, and a second polymer film 1021 and a second glass 106 are sequentially disposed on the lower surface of the set of modules. Alternatively, a first polymer film 1011 and a first glass 105 are sequentially disposed on the upper surfaces of the two or more modules, and a second polymer film 1021 and a second glass 106 are sequentially disposed on the lower surfaces of the two or more modules.
It should be noted that the first conductive layer is a first tin-doped indium oxide ITO layer, the second conductive layer is a second tin-doped indium oxide ITO layer, when a module with more than two groups of modules is formed, the film located above and the film located below are connected by gluing, and the connection mode is simple and does not affect the surface of power generation.
The above description is only a specific implementation of the embodiments of the present application, but the scope of the embodiments of the present application is not limited thereto, and any changes or substitutions within the technical scope disclosed in the embodiments of the present application should be covered by the scope of the embodiments of the present application. Therefore, the protection scope of the embodiments of the present application shall be subject to the protection scope of the claims.

Claims (14)

1. A substrate processing system, comprising: the sub-module frame is provided with an opening, a tray and a thin film;
the sub-module frame is movably arranged on the tray;
the film is coupled to the sub-module frame and covers the opening, the film is provided with a mounting opening, the area of the mounting opening is smaller than or equal to that of the opening, and the mounting opening is used for coupling a substrate;
wherein the area of the mounting opening is smaller than the area of the substrate, the substrate covering the mounting opening when the substrate is coupled with the film.
2. The system of claim 1, further comprising a transfer track, a pallet loading station, a pre-heating station, a processing station, a cooling station, and a pallet unloading station;
the tray loading station, the preheating station, the processing station, the cooling station and the tray unloading station are arranged in sequence, and the conveying track is used for sequentially moving the trays provided with the substrates to the tray loading station, the preheating station, the processing station, the cooling station and the tray unloading station;
wherein the processing stations comprise a number of flipping stations for flipping the sub-module frames in the trays in a vacuum chamber of the flipping station.
3. The system of claim 2, wherein the processing stations include at least the PECVD station and the PVD station of an etch station, a plasma enhanced chemical vapor deposition PECVD station, and a physical vapor deposition PVD station;
the etching station is used for dry etching the substrate; the PECVD station is used for carrying out PECVD deposition on the substrate; the PVD station is used for PVD deposition on the substrate;
wherein the etching station, the PECVD station and the PVD station are all provided with the overturning station.
4. The system of claim 1, wherein the film is provided with a plurality of mounting ports at intervals, and the mounting ports are used for coupling and arranging the substrates in sequence;
when the substrates are arranged through the mounting openings in a coupling mode, the distance between the upper surface of each substrate and the upper surface of the sub-module frame is equal to the distance between the lower surface of each substrate and the lower surface of the sub-module frame.
5. The system of claim 1, wherein the tray further comprises a radio frequency gasket that forms a ground loop with a chamber body of the processing station and a purge device for forming a gas wall separating the substrate and the tray.
6. The system of claim 2 or 3, further comprising a load lock and an unload lock;
the load lock is arranged between the tray loading station and the preheating station, and the load lock is used for transferring the substrate from an atmospheric environment to a vacuum environment in the system;
the unload lock is disposed between the processing station and the cooling station, the unload lock being configured to transfer the substrate from a vacuum environment to an atmospheric environment in the system.
7. A method for processing a substrate, based on the system of any of the preceding claims 1 to 6, the method comprising:
coupling a substrate to the mounting opening;
sequentially forming a first I layer and an N-type ion layer on the upper surface of the substrate;
and the overturning station overturns the sub-module frame, and a second I layer and a P-type ion layer are sequentially formed on the lower surface of the substrate.
8. The method of claim 7, wherein prior to sequentially forming a first I-layer and an N-type ion layer on the top surface of the substrate, comprising:
texturing the upper surface of the substrate and the lower surface of the substrate.
9. The method of claim 8, wherein the flipping station flips the sub-module frame after sequentially forming a second I-layer and a P-type ion layer on the lower surface of the substrate, comprising:
forming a first conductive layer on the lower surface of the substrate;
the overturning station overturns the sub-module frame;
and forming a second conductive layer on the upper surface of the substrate.
10. The method of claim 9, further comprising, after forming the second conductive layer on the upper surface of the substrate:
and forming a first bus bar communicated with the lower surface of the film on the first conductive layer, and forming a second bus bar communicated with the upper surface of the film on the second conductive layer.
11. The method of claim 10, wherein when forming a set of modules, forming a first conductive line on the first bus bar and a second conductive line on the second bus bar;
or, when more than two groups of modules are formed, more than two films are stacked in sequence, each film is provided with a first edge and a second edge which are arranged oppositely, the second edge of the film positioned above is overlapped with the first edge of the film positioned below, the first bus bar of the film positioned above and the second bus bar of the film positioned below form a through hole, a first conductive wire is formed on the first bus bar, and a second conductive wire is formed on the second bus bar.
12. The method of claim 11, wherein a first polymer film and a first glass are sequentially disposed on an upper surface of the set of modules, and a second polymer film and a second glass are sequentially disposed on a lower surface of the set of modules;
or a first polymer film and first glass are sequentially arranged on the upper surfaces of the more than two groups of modules, and a second polymer film and second glass are sequentially arranged on the lower surfaces of the more than two groups of modules.
13. A method according to claim 12, wherein the film located above is adhesively bonded to the film located below when forming the modules of the two or more groups of modules.
14. The method of claim 13, wherein the first conductive layer is a first tin-doped indium oxide (ITO) layer and the second conductive layer is a second tin-doped indium oxide (ITO) layer.
CN202111276826.7A 2021-10-29 2021-10-29 Substrate processing system and method Pending CN114005775A (en)

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US8071165B2 (en) * 2008-08-08 2011-12-06 International Solar Electric Technology, Inc. Chemical vapor deposition method and system for semiconductor devices
US10679883B2 (en) * 2012-04-19 2020-06-09 Intevac, Inc. Wafer plate and mask arrangement for substrate fabrication
KR102072872B1 (en) * 2012-04-26 2020-02-03 인테벡, 인코포레이티드 System architecture for vacuum processing
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JP6522667B2 (en) * 2014-02-20 2019-05-29 インテヴァック インコーポレイテッド Substrate double sided processing system and method

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CN115142022A (en) * 2022-06-23 2022-10-04 拉普拉斯(无锡)半导体科技有限公司 Vacuum coating equipment

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