CN112708868A

CN112708868A - Film coating equipment

Info

Publication number: CN112708868A
Application number: CN202011616393.0A
Authority: CN
Inventors: 李时俊; 陈麒麟; 刘兵吉
Original assignee: SC New Energy Technology Corp
Current assignee: SC New Energy Technology Corp
Priority date: 2020-12-30
Filing date: 2020-12-30
Publication date: 2021-04-27

Abstract

The invention discloses a coating device which can be used for coating a substrate in a hot filament chemical vapor deposition method, and comprises at least two process lines for coating the substrate, wherein the process lines are connected through a transmission device, the process lines comprise a first process line, and in the first process line, only a first coating cavity for coating a P-type doped silicon-based thin film on one surface of the substrate is arranged as a coating cavity. According to the coating equipment provided by the invention, one independent process line (namely the first process line) is used for coating the P-type doped silicon-based film on one surface of the substrate, so that cross contamination between the P-type doped silicon-based film coated on one surface of the substrate and other coating processes can be prevented.

Description

Film coating equipment

Technical Field

The invention relates to the technical field of solar panel manufacturing, in particular to coating equipment.

Background

In the fabrication process of the intrinsic amorphous silicon thin film and the doped amorphous silicon thin film of the SHJ solar cell, two methods are generally known, namely Plasma Enhanced Chemical Vapor Deposition (PECVD) and Hot Wire Chemical Vapor Deposition (HWCVD).

In the prior art, the performance of the solar cell panel is considered to be reduced when the solar cell panel is influenced by water vapor, oxygen, dust and the like in the air, and therefore, an integrated process line for simultaneously finishing the coating lamination of the single-sided intrinsic amorphous silicon thin film and the doped (n or p) amorphous silicon thin film of the solar cell panel is designed. However, the integrated process line has the technical problem of cross contamination among different coating processes.

Disclosure of Invention

The present invention aims to solve, at least to some extent, the technical problems existing in the known art. Therefore, the invention provides a coating device which can effectively reduce the technical problem of cross contamination among coating processes.

According to an embodiment of an aspect of the present invention, a coating apparatus may be used for coating a substrate in a hot filament chemical vapor deposition method, the coating apparatus includes at least two process lines for coating the substrate, the process lines are connected by a transmission device, the process lines include a first process line, and in the first process line, only a first coating cavity for coating a P-type doped silicon-based thin film on one side of the substrate is provided as a coating cavity.

The coating equipment provided by the invention at least has the following beneficial effects: because an independent process line (namely a first process line) is used for plating the P-type doped silicon-based film on one surface of the substrate, cross contamination between the process line and other film plating processes when the P-type doped silicon-based film is plated on one surface of the substrate can be prevented.

In some embodiments, the process line further comprises a second process line, and the second process line is provided with a second film plating cavity for plating the n-type doped silicon-based film on the other side of the substrate.

In some embodiments, the second process line is further provided with a third plating cavity for plating an intrinsic amorphous silicon thin film on one surface of the substrate, and a fourth plating cavity for plating an intrinsic amorphous silicon thin film on the other surface of the substrate, and the third plating cavity and the fourth plating cavity are respectively arranged at the front end of the second plating cavity.

In some embodiments, the process lines are respectively configured to coat each side of a plurality of spaced-apart side-by-side substrates.

In some embodiments, a first coating source is disposed within the first coating chamber, the first coating source comprising a plurality of filaments disposed along a transport direction of the substrate; the substrate comprises two pieces, and when the substrate is plated with the P-type doped silicon-based thin film, the two pieces of substrates are respectively positioned on two sides of the first film plating source.

In some embodiments, a second coating source is disposed within the second coating chamber, the second coating source comprising a plurality of filaments disposed along the transport direction of the substrate; the substrate comprises two pieces, and when the substrate is plated with the n-type doped silicon-based thin film, the two pieces of substrates are respectively positioned on two sides of the second film plating source.

In some embodiments, one of the third coating chamber and the fourth coating chamber is provided with a third coating source, and the third coating source comprises a plurality of hot wires arranged along the conveying direction of the substrate; the substrate comprises two pieces, and when one surface of the substrate is plated with the intrinsic amorphous silicon thin film, the two pieces of the substrate are respectively positioned at two sides of the third film plating source.

In some embodiments, two fourth coating sources are arranged in the other of the third coating chamber and the fourth coating chamber, the two fourth coating sources are arranged side by side, and each of the two fourth coating sources comprises a plurality of hot wires arranged along the conveying direction of the substrate; the substrate comprises two pieces, and when the intrinsic amorphous silicon thin film is plated on the other surface of the substrate, the two pieces of substrates are respectively positioned on the outer sides of the two fourth film plating sources.

In some embodiments, further comprising: a first tray loading the substrate positioned at the first process line; a second tray loading the substrate positioned at the second process line; and a transfer unit disposed between the second process line and the first process line, for transferring the substrate loaded on the second tray to the first tray.

In some embodiments, the first tray is a shielding tray and the second tray is a hollowed-out tray.

Drawings

FIG. 1 is a schematic view of one embodiment of a plating apparatus of the present invention.

Fig. 2 is a schematic view of a first tray.

Fig. 3 is a schematic view of a second tray.

Fig. 4 is a schematic view of an embodiment of a product related to the plating device of the present invention.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.

In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.

In the description of the present invention, the meaning of a plurality of means is one or more, the meaning of a plurality of means is two or more, and larger, smaller, larger, etc. are understood as excluding the number, and larger, smaller, inner, etc. are understood as including the number. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.

In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.

In the following description of fig. 1, the front-back direction may be understood as the sequence of the plating process, for example, the position of the device in the preceding step may be referred to as "front", and the position of the device in the subsequent step may be referred to as "back". A direction parallel to the paper is understood as "horizontal direction", and a direction perpendicular to the paper is understood as "vertical direction".

Fig. 1 is a schematic diagram of an embodiment of a coating apparatus 100, the coating apparatus 100 according to an embodiment of an aspect of the present invention may be used for coating a substrate 201 (refer to fig. 4, described later) in a hot filament chemical vapor deposition method, the coating apparatus 100 includes at least two process lines 101 for coating the substrate 201, the process lines 101 are connected by a transmission device 102, one first process line 103 is included in the process lines 101, and only a first coating chamber 104 for coating a P-type doped silicon-based thin film 203 on one surface of the substrate 201 is disposed in the first process line 103 as a coating chamber.

In the embodiment, since a separate process line (i.e., the first process line 103) is used to plate the P-doped silicon-based film 203 on one side of the substrate 201, cross contamination between the plating of the P-doped silicon-based film 203 on one side of the substrate 201 and other plating processes can be prevented.

Fig. 4 is a schematic view of a solar cell panel 200 manufactured by the plating apparatus 100. Referring to fig. 4, specifically, the substrate 201 to be plated may be, for example, an n-type single crystal silicon base layer of the solar cell panel 200, wherein one of two sides of the n-type single crystal silicon base layer is provided with an intrinsic amorphous silicon thin film 202, a P-type doped silicon base thin film 203, a TCO layer 204 (transparent conductive layer) and an electrode 205 in sequence from the base layer to the outside, and the other of the two sides of the n-type single crystal silicon base layer is provided with an intrinsic amorphous silicon thin film 202, an n-type doped silicon base thin film 206, a TCO layer 204 and an electrode 205 in sequence. The material and shape of the substrate 201 are not particularly limited as long as they can be used as the solar cell panel 200.

Although it is considered that the performance of the solar cell panel 200 is degraded by water vapor, oxygen, dust, etc. in the air in the prior art. However, the inventors have demonstrated that water vapor, oxygen, dust, and the like in the air have not been found to exert an influence on the solar cell panel 200 enough to cause a performance degradation thereof. In addition, in actual production, the production environment of the solar cell panel 200 can be secured by strengthening the management of the production plant, for example, the production of the solar cell panel 200 in a clean room. In contrast, the inventors of the present invention have fully demonstrated that the problem of cross-contamination between coating processes is more realistic, since the contamination of the doped (p) amorphous silicon thin film coating stack to other thin film coatings is severe. Therefore, in the present embodiment, the plating process for plating the P-type doped silicon-based film 203 on the substrate 201 is performed on a different process line 101 than other plating processes, such as plating the intrinsic amorphous silicon film 202 and the n-type doped silicon-based film 206, so as to prevent cross contamination between the plating process for plating the P-type doped silicon-based film 203 and other plating processes, and further improve the photoelectric conversion efficiency of the solar cell panel 200.

Specifically, the first process line 103 may include, for example, in addition to the first plating chamber 104: a first feeding cavity 105, a first heating cavity 106, a first discharging cavity 107 and a transport device 102 for transporting substrates 201 between them. Wherein, the first feeding cavity 105, the first heating cavity 106, the first coating cavity 104 and the first discharging cavity 107 are arranged from front to back in sequence. The first feed chamber 105 interfaces with other process lines 101 (e.g., a second process line 108 described below) via the transfer device 102. The first heating cavity 106 is arranged behind the first feeding cavity 105 and is used for heating the substrate 201 to be coated. The first film coating cavity 104 is arranged behind the first heating cavity 106, and plates the P-type doped silicon-based film 203 on the preheated substrate 201. The first discharging cavity 107 is arranged behind the first film coating cavity 104 and discharges the substrate 201 which is coated with the P-type doped silicon-based film 203. The transfer device 102 may be, for example, a roll line for transferring a tray (e.g., a first tray 109 described later) loaded with the substrate 201 among the first feeding chamber 105, the first heating chamber 106, the first coating chamber 104, and the first discharging chamber 107. The chambers are connected in series by, for example, a vacuum lock (not shown) as is well known to those skilled in the art. In addition, each cavity can be provided with a heating device and a heat preservation device. The electric partition plates 110 are respectively arranged at the joints of the cavities, so that the cavities are mutually independent.

In some embodiments, to realize the plating of the doped (n) amorphous silicon thin film on the other side of the substrate 201, the process line 101 further comprises a second process line 108, and the second process line 108 is provided with a second plating cavity 111 for plating the n-type doped silicon-based thin film 206 on the other side of the substrate 201. Specifically, the second process line 108 is independent from the first process line 103, for example, the second process line 108 is provided with a second discharging cavity 112 (described below) behind the second plating cavity 111, and the substrate 201 is discharged through the second discharging cavity 112 after the second plating cavity 111 finishes the plating of the n-type doped silicon-based thin film 206.

In order to achieve a transfer of the substrate 201 from the second process line 108 to the first process line 103, between the second process line 108 and the first process line 103, a transfer section 113 may be provided, for example comprising a six-axis robot for gripping the substrate 201, the transfer section 113 transferring the substrate 201 from the second process line 108 to the first process line 103. Specifically, the first process line 103 includes a first tray 109 for loading the substrate 201 located in the first process line 103, and the second process line 108 includes a second tray 114 for loading the substrate 201 located in the second process line 108. After the second tray 114 loaded with the substrate 201 is discharged through the second discharging chamber 112, the substrate 201 on the second tray 114 is held by, for example, a six-axis robot of the transfer unit 113 and transferred to the first tray 109.

In some embodiments, the second process line 108 is further provided with a third plating chamber 115 for plating the intrinsic amorphous silicon thin film 202 on one side of the substrate 201, and a fourth plating chamber 116 for plating the intrinsic amorphous silicon thin film 202 on the other side of the substrate 201, and the third plating chamber 115 and the fourth plating chamber 116 are respectively disposed at the front end of the second plating chamber 111. As described above, since the intrinsic amorphous silicon thin film 202 and the P-type doped silicon-based thin film 203 are sequentially disposed on one side of the substrate 201 from inside to outside, and the intrinsic amorphous silicon thin film 202 and the n-type doped silicon-based thin film 206 are sequentially disposed on the other side from inside to outside, the intrinsic amorphous silicon thin films 202 need to be plated on two sides of the substrate 201 before the n-type doped silicon-based thin film 206 and the P-type doped silicon-based thin film 203 are plated.

In addition, the second process line 108 may include, for example, in addition to the second plating chamber 111, the third plating chamber 115, and the fourth plating chamber 116: a second feeding cavity 117, a second heating cavity 118, a second discharging cavity 112 and a transport device 102 for transporting the substrate 201 therebetween. Wherein, the second feeding cavity 117, the second heating cavity 118, the fourth coating cavity 116, the third coating cavity 115, the second coating cavity 111 and the second discharging cavity 112 are sequentially arranged from front to back. A second feed chamber 117 is provided at the front end of the second process line 108 and interfaces with a loading device (not shown) of the substrates 201 through the transport device 102. The second heating cavity 118 is arranged behind the second feeding cavity 117 and is used for heating the substrate 201 to be coated. The fourth film coating cavity 116 and the third film coating cavity 115 are arranged behind the second heating cavity 118, and plate the intrinsic amorphous silicon thin film 202 on the preheated substrate 201. The position of the third plating chamber 115 and the fourth plating chamber 116 with respect to each other is not particularly limited as long as it is disposed between the second plating chambers 111. The second plating chamber 111 is disposed behind the third plating chamber 115 and the fourth plating chamber 116. The second discharging cavity 112 is arranged behind the second film coating cavity 111, and is used for discharging the substrate 201 which is coated with the n-type doped silicon-based film 206.

In addition, although the example in which the intrinsic amorphous silicon thin film 202 plating both surfaces of the substrate 201 and the n-type doped silicon based thin film 206 plating one surface of the substrate 201 are integrated in one process line (i.e., the second process line 108) has been described above, the present invention is not limited thereto. These coating processes can also be carried out in a number of different process lines. In addition, although the example in which the intrinsic amorphous silicon thin films 202 on both sides of the plating substrate 201 are plated by the two plating chambers (the third plating chamber 115 and the fourth plating chamber 116) has been described above, the present invention is not limited thereto. The coating of the intrinsic amorphous silicon thin film 202 on both sides of the substrate 201 can also be completed by using only one coating chamber.

In some embodiments, in order to improve the production efficiency and reduce the number of coating chambers, the process lines 101 (i.e., the first process line 103 and the second process line 104) are respectively configured to coat each side of a plurality of spaced-apart substrates 201. Specifically, for example, plating of one surface of the plurality of substrates 201 is completed in each plating chamber.

The following is a detailed description of each plating chamber that completes plating of one side of each of the two substrates 201.

In some embodiments, a first coating source 119 is disposed within the first coating chamber 104, the first coating source 119 comprising a plurality of filaments 120 disposed along the transport direction of the substrate 201. When the substrate 201 is plated with the P-type doped silicon-based thin film 203, the two substrates 201 are respectively located at two sides of the first plating source 119. Specifically, the hot wire 120 as the first coating source 119 is not particularly limited as long as it can realize non-directional heating, and the substrates 201 on both sides thereof are coated. For example, a tungsten filament commonly used in hot filament chemical vapor deposition for heating the reaction gas to a process temperature for coating on the surface of the substrate 201. The heating of these filaments 120 is non-directional and the substrate 201 on both sides thereof can be processed simultaneously. Therefore, the hot wire 120 in the first coating cavity 104 can simultaneously coat the opposite surfaces of the substrates 201 on the two sides. The first coating source 119 may include three sets of the hot wires 120 or four sets of the hot wires 120, thereby improving coating efficiency. The plurality of sets of filaments 120 of the first coating source 119 may be spaced apart from each other along the transport direction (front-back direction) of the substrate 201, and each of the filaments 120 may be arranged to extend along the vertical direction (vertical coating, i.e. the coating surface of the substrate 201 is perpendicular to the horizontal direction), or have a certain inclination angle with respect to the vertical direction. Further, each of the hot wires 120 of the first coating source 119 may be disposed to extend in a horizontal direction (horizontal coating, i.e., coating surface of the substrate 201 is parallel to the horizontal direction), or to have a certain inclination angle with respect to the horizontal direction. Here, the horizontal direction may be a direction parallel to the ground (in the drawing, the paper plane), and the vertical direction may be a direction of gravity (in the drawing, the vertical direction is perpendicular to the paper plane). The hot wire 120 may be extended in a longitudinal direction substantially in a vertical direction or in a substantially horizontal direction, as long as it can be visually recognized.

Fig. 2 is a schematic view of the first tray 109 for holding the substrates 201 in a vertical state, and referring to fig. 2 with continued reference to fig. 1, in addition, in order to prevent the first plating source 119 from generating contamination, wraparound plating, and the like on one surface of the substrates 201 when plating the other surface of the substrates 201, the first tray 109 of the first process line 103 may be a shadow type tray. Specifically, the shielding tray is not particularly limited as long as it can prevent the plating material from contaminating the other surface of the substrate 201, and for example, the first accommodation groove 122 for accommodating the substrate 201 may be opened in the first base plate 121 of the first tray 109, and the accommodation groove 122 may be provided so as not to penetrate through the first base plate 121. This prevents contamination of one surface of the substrate 201 when the P-doped silicon-based thin film 203 is plated on the other surface of the substrate 201.

In some embodiments, a second coating source 123 is disposed within the second coating chamber 111, the second coating source 123 comprising a plurality of filaments 120 disposed along the transport direction of the substrate 201. When the substrate 201 is coated with the n-type doped silicon-based thin film 206, the two substrates 201 are respectively located at two sides of the second coating source 123. Specifically, the second coating source 123 may be disposed with reference to the first coating source 119, and will not be described in detail herein. In addition, it should be noted that, since only one coating source is disposed in each of the first coating chamber 104 and the second coating chamber 111, and the substrate 201 on both sides of the coating source is coated on the surface opposite to the substrate 201, before the substrate 201 is transferred from the second coating chamber 111 to the first coating chamber 104, the substrate 201 needs to be turned over. Specifically, the transfer section 113 may further include a turn-over mechanism (not shown) for turning over the substrate 201, and the turn-over mechanism may be a turn-over mechanism known to those skilled in the art and will not be described in detail herein.

In some embodiments, one of the third coating chamber 115 and the fourth coating chamber 116 is provided with a third coating source 124, and the third coating source 124 includes a plurality of hot wires 120 arranged along the transport direction of the substrate 201. When plating the intrinsic amorphous silicon thin film 202 on one side of the substrate 201, two substrates 201 are respectively located on both sides of the third plating source 124. Specifically, the third coating chamber 115 may be adjacent to the second coating chamber 111, with the third coating source 124 disposed within the third coating chamber 115. In addition, the third coating source 124 may be disposed with reference to the first coating source 119, and will not be described in detail herein.

In addition, two fourth coating sources 125 are arranged in the other of the third coating chamber 115 and the fourth coating chamber 116, the two fourth coating sources 125 are arranged side by side, and the two fourth coating sources 125 respectively comprise a plurality of hot wires 120 arranged along the transmission direction of the substrate 201. When the other side of the substrate 201 is plated with the intrinsic amorphous silicon thin film 202, the two substrates 201 are respectively located outside the two fourth plating sources 125. Specifically, the fourth coating chamber 116 may be located in front of the third coating chamber 115, and the fourth coating source 125 is disposed within the fourth coating chamber 116. In the fourth coating chamber 116, two fourth coating sources 125 may be spaced apart along the horizontal direction of the fourth coating chamber 116 or along the vertical direction of the fourth coating chamber 116 according to the process requirement. In addition, when the two fourth film plating sources 125 are used for plating a film on the surface of the substrate 201 opposite to the first film plating source 125, the two fourth film plating sources 125 may be used for simultaneously plating a film on the surface of the substrate 201 opposite to the first film plating source 125, or sequentially plating the film on the surface of the substrate 201, and a person skilled in the art may control the fourth film plating sources 125 by using a control system for controlling the on or off of the fourth film plating sources 125 as required.

Fig. 3 is a schematic diagram of the second tray 114 for carrying the substrate 201 in a vertical state, referring to fig. 3 and continuing to refer to fig. 1, and in addition, in the second process line 108, the second tray 114 is configured as a hollow tray for coating the two sides of the substrate 201. Specifically, the second tray 114 is not particularly limited as long as it can perform double-sided plating of the substrate 201, and for example, a through notch 127 may be formed in the second base plate 127 of the second tray 114 in addition to the second receiving groove 126 for receiving the substrate 201, thereby performing double-sided plating of the substrate 201.

It should be noted that, in the above embodiments, the shapes and configurations of the components not specifically described in detail can be regarded as known by those skilled in the art. For example, the configuration of a vacuum system for controlling the vacuum pressure in each coating chamber, the configuration of an ultrapure gas path system for controlling the gas in each coating chamber, the installation manner of a vacuum lock, the installation manner of the electric partition plate 110, the installation manner of a heating module and a heat-insulating module provided in each chamber, and the like can be installed by those skilled in the art according to actual needs.

A process of manufacturing the solar cell panel 200 using the plating apparatus 100 of the above embodiment will be described below. Specifically, the coating apparatus 100 is used for manufacturing a double-sided intrinsic amorphous silicon thin film 202 and a doped amorphous silicon thin film stack (P-type doped silicon-based thin film 203, n-type doped silicon-based thin film 206) on two sides (hereinafter, referred to as a left side and a right side) of an n-type single crystal silicon-based layer (hereinafter, referred to as a substrate 201).

Specifically, the plating apparatus 100 is substantially U-shaped, and includes a second process line 108, a first process line 103, and a transfer section 113 connecting a rear end of the second process line 108 and a front end of the first process line 103. The second process line 108 comprises a second feeding cavity 117, a second heating cavity 118, a fourth coating cavity 116, a third coating cavity 115, a second coating cavity 111 and a second discharging cavity 112 from front to back in sequence. The chambers are separated by an electrically powered partition 110. The chambers are connected by a transport device 102, such as a roller line. The transfer device 102 simultaneously transfers two second trays 114 that are side by side in the left-right direction. The second trays 114 are hollow trays, and each second tray 114 carries a substrate 201. The substrate 201 is placed on the second tray 114 in a direction perpendicular to the horizontal plane. The first process line 103 sequentially comprises a first feeding cavity 105, a first heating cavity 106, a first film coating cavity 104 and a first discharging cavity 107 from front to back. The chambers are separated by an electrically powered partition 110. The chambers are connected by a transport device 102, such as a roller line. The transport device 102 simultaneously transports two first trays 109 side by side in the left-right direction. The first trays 109 are shadow type trays, and each first tray 109 carries the substrate 201 from the second tray 114. The substrate 201 is placed on the first tray 109 in a direction perpendicular to the horizontal plane. The vacuum system, gas path system, and heating system (heating unit and heat-insulating unit) of the plating equipment 100 are not shown.

After entering the second process line 108 from the second feeding chamber 117, the second tray 114 enters the fourth coating chamber 116 through the preheating of the second heating chamber 118. In the fourth coating chamber 116, the two substrates 201 are located between the two fourth coating sources 125 in the left-right direction, the fourth coating source 125 on the right side coats the intrinsic amorphous silicon thin film 202 on the right side of the substrate 201 on the right side, and the fourth coating source 125 on the left side coats the intrinsic amorphous silicon thin film 202 on the left side of the substrate 201 on the left side.

After the fourth coating chamber 116 finishes coating one side of the two substrates 201, the transfer device 102 transfers the second tray 114 to the third coating chamber 115. In the third coating chamber 115, the two substrates 201 are respectively located at the two sides of the third coating source 124 in the left-right direction, and the third coating source 124 respectively coats the intrinsic amorphous silicon thin film 202 on the left side surface of the substrate 201 at the right side and coats the intrinsic amorphous silicon thin film 202 on the right side surface of the substrate 201 at the left side.

After the fourth plating chamber 116 and the third plating chamber 115 complete the plating of the intrinsic amorphous silicon thin films 202 on both sides of the substrate 201, the transfer device 102 transfers the second tray 114 to the second plating chamber 111. In the second coating chamber 111, the two substrates 201 are respectively located at two sides of the second coating source 123 in the left-right direction, and the third coating source 124 respectively coats the n-type doped silicon-based thin film 206 on the left side surface of the substrate 201 on the right side and coats the n-type doped silicon-based thin film 206 on the right side surface of the substrate 201 on the left side.

After the second coating cavity 111 finishes coating the n-type doped silicon-based thin film 206 on one side of each substrate 201, the conveying device 102 transfers the second tray 114 to the second discharging cavity 112. After the second discharging chamber 112 is evacuated, the transfer unit 113 takes the substrate 201 from the second tray 114 and turns it upside down, and then places the first tray 109.

After the first tray 109 obtains the substrate 201, the transporting device 102 of the first process line 103 transports the first tray 109 to the first feeding cavity 105 and the first heating cavity 106, respectively. After the first heating cavity 106 is preheated, the transfer device 102 transfers the first tray 109 to the first coating cavity 104. In the first coating cavity 104, the two substrates 201 are respectively located at two sides of the first coating source 119 in the left-right direction, the first coating source 119 respectively coats the P-type doped silicon-based thin film 203 on the left side surface of the substrate 201 on the right side, and coats the P-type doped silicon-based thin film 203 on the right side surface of the substrate 201 on the left side.

After the first coating cavity 104 finishes coating the P-type doped silicon-based thin film 203 on one side of each substrate 201, the conveying device 102 transfers the first tray 109 to the first discharging cavity 107. Thus, the plating of the double-sided intrinsic amorphous silicon thin film 202 on the n-type single crystal silicon-based layer (substrate 201) of the solar cell panel 200, the n-type doped silicon-based thin film 206 on one side and the P-type doped silicon-based thin film 203 on the other side are completed.

Therefore, in the coating equipment 100 of the present invention, one independent process line 101 (i.e., the first process line 103) is used to plate the P-type doped silicon-based thin film 203 on one surface of the substrate 201, so that cross contamination between the P-type doped silicon-based thin film 203 plated on one surface of the substrate 201 and other coating processes can be prevented, and the photoelectric conversion efficiency of the solar cell panel 200 can be further improved.

In addition, the coating equipment 100 of the invention can simultaneously coat a plurality of substrates 201, thereby reducing the number of process chambers and reducing the equipment cost.

While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. The coating equipment is characterized by comprising at least two process lines for coating the substrate, wherein the process lines are connected through a transmission device, the process lines comprise a first process line, and in the first process line, only a first coating cavity for coating a P-type doped silicon-based thin film on one surface of the substrate is arranged as a coating cavity.

2. The plating apparatus according to claim 1, wherein the process line further comprises a second process line provided with a second plating chamber for plating the other side of the substrate with the n-type doped silicon-based thin film.

3. The plating apparatus according to claim 2, wherein the second process line is further provided with a third plating chamber for plating an intrinsic amorphous silicon thin film on one side of the substrate and a fourth plating chamber for plating an intrinsic amorphous silicon thin film on the other side of the substrate, and the third plating chamber and the fourth plating chamber are respectively provided at the front end of the second plating chamber.

4. The plating apparatus according to claim 3, wherein the process lines are respectively arranged to plate respective sides of a plurality of the substrates which are spaced apart side by side.

5. The coating apparatus according to claim 4, wherein a first coating source is provided in said first coating chamber, said first coating source comprising a plurality of hot wires arranged along a transport direction of said substrate;

the substrate comprises two pieces, and when the substrate is plated with the P-type doped silicon-based thin film, the two pieces of substrates are respectively positioned on two sides of the first film plating source.

6. The coating apparatus according to claim 4, wherein a second coating source is provided in said second coating chamber, said second coating source comprising a plurality of hot wires arranged along a transport direction of said substrate;

the substrate comprises two pieces, and when the substrate is plated with the n-type doped silicon-based thin film, the two pieces of substrates are respectively positioned on two sides of the second film plating source.

7. The coating apparatus according to claim 4, wherein one of said third coating chamber and said fourth coating chamber is provided with a third coating source comprising a plurality of hot wires arranged along a transport direction of said substrate;

the substrate comprises two pieces, and when one surface of the substrate is plated with the intrinsic amorphous silicon thin film, the two pieces of the substrate are respectively positioned at two sides of the third film plating source.

8. The coating apparatus according to claim 7, wherein two fourth coating sources are provided to the other of said third coating chamber and said fourth coating chamber, said two fourth coating sources being arranged side by side, said two fourth coating sources each comprising a plurality of hot wires arranged along a transport direction of said substrate;

the substrate comprises two pieces, and when the intrinsic amorphous silicon thin film is plated on the other surface of the substrate, the two pieces of substrates are respectively positioned on the outer sides of the two fourth film plating sources.

9. The plating device according to claim 4, further comprising:

a first tray loading the substrate positioned at the first process line;

a second tray loading the substrate positioned at the second process line;

and a transfer unit disposed between the second process line and the first process line, for transferring the substrate loaded on the second tray to the first tray.

10. The plating apparatus according to claim 9, wherein the first tray is a shadow type tray, and the second tray is a hollow type tray.