CN102943251B - Device for enhancing uniformity of PECVD (plasma enhanced chemical vapour deposition) coating film - Google Patents
Device for enhancing uniformity of PECVD (plasma enhanced chemical vapour deposition) coating film Download PDFInfo
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- CN102943251B CN102943251B CN201210515182.7A CN201210515182A CN102943251B CN 102943251 B CN102943251 B CN 102943251B CN 201210515182 A CN201210515182 A CN 201210515182A CN 102943251 B CN102943251 B CN 102943251B
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Abstract
The invention relates to the technical field of production of solar cells, and in particular relates to a device for enhancing the uniformity of a PECVD (plasma enhanced chemical vapour deposition) coating film. The device for enhancing the uniformity of the PECVD coating film comprises a deposition cavity, a radio frequency electrode and an air inlet system and also comprises a vacuum system arranged below the deposition cavity, wherein the deposition cavity is a tubular vacuum cavity, and the air inlet system adopts a longitudinal air inlet manner and comprises an air inlet device arranged at one side of the deposition cavity. The air inlet manner of the device used for enhancing the uniformity of the PECVD coating film provided by the invention is changed into the longitudinal air inlet manner from the original horizontal air inlet of the deposition cavity, and the air outlet manner of the device is changed into the manner that one air outlet is arranged on the deposition cavity, so that properties of the film are enhanced, and utilization rate of process gas in a PECVD film preparation process is effectively improved.
Description
Technical field
The present invention relates to the production technical field of solar cell, being specifically related to a kind of device for promoting PECVD plated film uniformity.
Background technology
Solar cell, as a kind of device that solar radiant energy can be converted into electric energy, has obtained accreditation and the concern of people, and worldwide promotion and application rapidly.
In the production process of crystal silicon solar energy battery, need to make at battery surface to reduce the antireflective coating of light at silicon chip surface reflectivity, the transformation efficiency of crystal silicon solar energy battery can be significantly improved.Current crystal silicon solar energy battery makes antireflective coating equipment in producing generally adopts tubular type PECVD filming equipment, and in the process making antireflective coating, process gas all adopts the air inlet of deposit cavity one end, the mode of movement that the other end is bled.Like this, when process gas by inlet end move to bleed end time, composition changes, and concentration also declines thereupon, affects deposition effect.Main manifestations is: one, the thickness evenness of film is poor; Two, the refractive index of film to taper off trend with the direction of air-flow.Add the generation probability of battery defective products so to a certain extent, increase the distributed area of the short circuit current of solar cell, open-circuit voltage and battery efficiency simultaneously.At present, its improving countermeasure is to provide abundant reacting gas to ensure the performance of film, certainly will cause the waste of gas like this.
Summary of the invention
Object of the present invention is exactly defect for above-mentioned existence and provides a kind of device for promoting PECVD plated film uniformity.Intake method of the present invention changes longitudinal air inlet into by the horizontal air inlet of original deposit cavity, the mode of giving vent to anger changes the mode of giving vent to anger deposition chamber being arranged a gas outlet into, so both improve the performance of film, also effectively raise the utilization rate to process gas in PECVD membrane-film preparation process.
A kind of device technique scheme for promoting PECVD plated film uniformity of the present invention is, comprise deposit cavity, radio-frequency electrode and gas handling system, also comprise the vacuum system be arranged at below deposit cavity, deposit cavity is tube type vacuum cavity, gas handling system adopts the mode of longitudinal air inlet, comprises the inlet duct being positioned at deposit cavity side.
Inlet duct connects the air jet pipe being positioned at deposit cavity inner upper.
Air jet pipe is provided with more than one.
Beneficial effect of the present invention is: a kind of intake method for promoting PECVD device of the present invention changes longitudinal air inlet into by the horizontal air inlet of original deposit cavity, the mode of giving vent to anger changes the mode of giving vent to anger deposition chamber being arranged a gas outlet into, like this equipment is improved, ensure that the uniformity of gas field in deposit cavity, stability, not only improve the uniformity of film thickness, also effectively improve the uniformity of film refractive index, make the distributed area Relatively centralized of the short circuit current of solar cell, open-circuit voltage and battery efficiency, decrease the generation probability of bad simultaneously; In addition, this deposition process effectively raises the utilization rate to process gas in PECVD membrane-film preparation process
accompanying drawing illustrates:
Figure 1 shows that structural representation of the present invention;
Figure 2 shows that the structural representation of prior art.
In figure, 1. deposit cavity, 2. gas handling system, 3. vacuum system, 4. radio-frequency electrode, 5. graphite boat, 6. power-supply system.
detailed description of the invention:
In order to understand the present invention better, describe technical scheme of the present invention in detail below in conjunction with accompanying drawing, but the present invention is not limited thereto.
Embodiment 1
A kind of device for promoting PECVD plated film uniformity of the present invention, comprise deposit cavity 1, radio-frequency electrode 4 and gas handling system 2, also comprise the vacuum system 3 be arranged at below deposit cavity 1, deposit cavity 1 is tube type vacuum cavity, gas handling system 2 adopts the mode of longitudinal air inlet, comprises the inlet duct being positioned at deposit cavity 1 side.Be provided with graphite boat 5 in deposit cavity 1, radio-frequency electrode 4 connects power-supply system 6.
Embodiment 2
A kind of device for promoting PECVD plated film uniformity of the present invention, comprise deposit cavity 1, radio-frequency electrode 4 and gas handling system 2, also comprise the vacuum system 3 be arranged at below deposit cavity 1, deposit cavity 1 is tube type vacuum cavity, gas handling system 2 adopts the mode of longitudinal air inlet, comprise the inlet duct being positioned at deposit cavity 1 side, inlet duct connects the air jet pipe being positioned at deposit cavity 1 inner upper.Be provided with graphite boat 5 in deposit cavity 1, radio-frequency electrode 4 connects power-supply system 6.
Claims (1)
1. one kind for promoting the device of PECVD plated film uniformity, comprise deposit cavity, radio-frequency electrode and gas handling system, it is characterized in that, also comprise the vacuum system be arranged at below deposit cavity, deposit cavity is tube type vacuum cavity, gas handling system adopts the mode of longitudinal air inlet, comprises the inlet duct being positioned at deposit cavity side; Inlet duct connects the air jet pipe being positioned at deposit cavity inner upper, and air jet pipe is provided with more than one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210515182.7A CN102943251B (en) | 2012-12-05 | 2012-12-05 | Device for enhancing uniformity of PECVD (plasma enhanced chemical vapour deposition) coating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210515182.7A CN102943251B (en) | 2012-12-05 | 2012-12-05 | Device for enhancing uniformity of PECVD (plasma enhanced chemical vapour deposition) coating film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102943251A CN102943251A (en) | 2013-02-27 |
| CN102943251B true CN102943251B (en) | 2015-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210515182.7A Active CN102943251B (en) | 2012-12-05 | 2012-12-05 | Device for enhancing uniformity of PECVD (plasma enhanced chemical vapour deposition) coating film |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105483647B (en) * | 2016-01-07 | 2018-08-21 | 深圳市捷佳伟创新能源装备股份有限公司 | A kind of plasma enhanced chemical vapor deposition equipment |
| CN105568257B (en) * | 2016-03-03 | 2018-08-07 | 深圳市捷佳伟创新能源装备股份有限公司 | Electrode graphite boat and chemical vapor depsotition equipment before and after a kind of |
| CN106756884B (en) * | 2016-12-13 | 2018-10-23 | 温州海旭科技有限公司 | A kind of PECVD coating apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101148756A (en) * | 2007-10-31 | 2008-03-26 | 苏州大学 | Vacuum plasma reactor used for large area film growth |
| EP2045358A2 (en) * | 2007-09-11 | 2009-04-08 | Näbauer, Anton | Reducing the consumption of process gases during chemical gas phase separation of silicon layers during which hydrogen is produced in addition to the separating layer as a reaction product |
| CN101880867A (en) * | 2010-07-02 | 2010-11-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma enhanced chemical vapor deposition device |
| CN203049033U (en) * | 2012-12-05 | 2013-07-10 | 山东力诺太阳能电力股份有限公司 | Device for improving uniformity of plasma enhanced chemical vapor deposition (PECVD) coating films |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62151565A (en) * | 1985-12-25 | 1987-07-06 | Sharp Corp | Film forming device for photoconductor |
| US5133986A (en) * | 1990-10-05 | 1992-07-28 | International Business Machines Corporation | Plasma enhanced chemical vapor processing system using hollow cathode effect |
| US20050178336A1 (en) * | 2003-07-15 | 2005-08-18 | Heng Liu | Chemical vapor deposition reactor having multiple inlets |
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2012
- 2012-12-05 CN CN201210515182.7A patent/CN102943251B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2045358A2 (en) * | 2007-09-11 | 2009-04-08 | Näbauer, Anton | Reducing the consumption of process gases during chemical gas phase separation of silicon layers during which hydrogen is produced in addition to the separating layer as a reaction product |
| CN101148756A (en) * | 2007-10-31 | 2008-03-26 | 苏州大学 | Vacuum plasma reactor used for large area film growth |
| CN101880867A (en) * | 2010-07-02 | 2010-11-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma enhanced chemical vapor deposition device |
| CN203049033U (en) * | 2012-12-05 | 2013-07-10 | 山东力诺太阳能电力股份有限公司 | Device for improving uniformity of plasma enhanced chemical vapor deposition (PECVD) coating films |
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| CN102943251A (en) | 2013-02-27 |
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