CN203295602U - Device for coating antireflection film - Google Patents
Device for coating antireflection film Download PDFInfo
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- CN203295602U CN203295602U CN2013203728308U CN201320372830U CN203295602U CN 203295602 U CN203295602 U CN 203295602U CN 2013203728308 U CN2013203728308 U CN 2013203728308U CN 201320372830 U CN201320372830 U CN 201320372830U CN 203295602 U CN203295602 U CN 203295602U
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Abstract
The utility model provides a device for coating antireflection film. The device comprises a feeding chamber, a preheating chamber, a process chamber, a cooling chamber and a discharging chamber. At least one gas purging apparatus is arranged at the top of each of the feeding chamber, the preheating chamber, the process chamber, the cooling chamber and the discharging chamber, and at least one debris discharging port is formed in the bottom of each of the feeding chamber, the preheating chamber, the process chamber, the cooling chamber and the discharging chamber. Before antireflection film is coated on a batch of silicon wafers, nitrogen purging cleaning is performed on the three chambers, the internal cleanliness of the chambers is guaranteed, the cleanliness of film coating surfaces of every batch of silicon wafers placed in the chambers is guaranteed, chromatic aberration is reduced, the qualified rate of antireflection film coating is improved, and the qualified rate of solar cell improving is further improved.
Description
Technical field
The utility model relates to technical field of solar batteries, more particularly, relates to a kind of coated with antireflection film device.
Background technology
Solar cell, also claim photovoltaic cell, is the semiconducter device that a kind of luminous energy with the sun is converted into electric energy., because it is Green Product, can not cause environmental pollution, and sun power is renewable resources, so under current energy starved situation, solar cell is a kind of novel energy that arranged wide development prospect.Silicon chip is carried out the coated with antireflection film preparing the solar cell process need, general antireflective coating mostly is silicon nitride film, and the silicon nitride film color be blueness.The effect of coated with antireflection film is exactly to reduce reflection of light, has increased the absorption intensity to light, can also play passivation effect simultaneously.
In existing solar cell preparation process, usually adopt PECVD(Plasma Enhanced Chemical Vapour Deposition, plasma reinforced chemical vapour deposition) coated with antireflection membrane method, the method is a kind of chemical gaseous phase depositing process that carrys out deposit film by increasing energy of plasma, usually adopts Roth﹠amp; The chain type PECVD coated with antireflection film device of RAU.This coated with antireflection film device inside comprises five chambers, is followed successively by the charging chamber, preheating chamber, processing chamber, cooling chamber and discharging chamber.The contriver finds, in preparing the solar cell process, often occurring that the inhomogeneous and antireflective coating of antireflective coating is surperficial has an aberration, and product qualified rate is low.
The utility model content
In view of this, the utility model provides a kind of coated with antireflection film device, and the coated with antireflection film device that adopts the utility model to provide has improved the uniformity coefficient of antireflective coating, has reduced the situation that the antireflective coating aberration occurs, has improved the solar battery sheet product qualified rate.
For achieving the above object, the utility model provides following technical scheme:
A kind of coated with antireflection film device, comprise charging chamber, preheating chamber, processing chamber, cooling chamber and discharging chamber, the top of described charging chamber, described preheating chamber and described processing chamber all is provided with a gas purging device at least, and the bottom of described charging chamber, described preheating chamber and described processing chamber all is provided with a chip relief outlet at least.
Preferably, the top of described cooling chamber and described discharging chamber all is provided with a gas purging device at least, and described cooling chamber and described discharging cavity bottom all are provided with a chip relief outlet at least.
Preferably, the center of top zone of described charging chamber, described preheating chamber, described processing chamber, described cooling chamber and described discharging chamber is provided with a gas purging device.
Preferably, the center of top zone of described charging chamber, described preheating chamber, described processing chamber, described cooling chamber and described discharging chamber and each position, angle, top are provided with a gas purging device.
Preferably, each position, angle, bottom of described charging chamber, described preheating chamber, described processing chamber, described cooling chamber and described discharging chamber is provided with a chip relief outlet.
Preferably, each fringe region of bottom of described charging chamber, described preheating chamber, described processing chamber, described cooling chamber and described discharging chamber all is provided with a chip relief outlet at least.
Preferably, described gas purging device is nitrogen purging device.
Compared with prior art, technical scheme provided by the utility model has the following advantages:
Coated with antireflection film device provided by the utility model, before a collection of silicon chip is carried out the coated with antireflection film, at first the charging chamber in the coated with antireflection film device, preheating chamber and processing chamber are cleared up, avoided the last consignment of silicon chip in the inner transport process of coated with antireflection film device because vibrations make the low die crack of physical strength, the situation that chip remains on chamber inner wall and track occurs.Guaranteed the cleaning of coated with antireflection film inner cavity chamber, guaranteed the cleaning of coated surface when the coated with antireflection film of every a collection of silicon chip, thereby reduced the situation that the aberration sheet occurs, improved the qualification rate of antireflective coating, and then improved the product qualified rate of solar battery sheet.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
A kind of coated with antireflection film device structural representation that Fig. 1 provides for the utility model embodiment;
The another kind of coated with antireflection film device structural representation that Fig. 2 provides for the utility model embodiment;
Another coated with antireflection film device structural representation that Fig. 3 provides for the utility model embodiment;
Another coated with antireflection film device structural representation that Fig. 4 provides for the utility model embodiment;
Another coated with antireflection film device structural representation that Fig. 5 provides for the utility model embodiment.
Embodiment
Just as stated in the Background Art, in preparing the solar cell process, often occurring that the inhomogeneous and antireflective coating of antireflective coating is surperficial has an aberration, has reduced the solar cell product qualified rate.The contriver studies discovery, causes one of the reason of this defect for the coated surface of silicon chip is stained with chip, affects the uniformity coefficient of antireflective coating in the coated with antireflection membrane process, the aberration sheet even occurs, and then has affected the product qualified rate of solar cell.
In the coated with antireflection membrane process, a collection of silicon chip need to be put into the coated with antireflection film device and carry out the coated with antireflection film.This batch silicon chip is in the inner transport process of coated with antireflection film, carry the vibrations of the support plate of silicon chip due to inside, make the die crack of bad mechanical strength in this batch silicon chip, if cleaning not in time, when the next batch silicon chip carries out the coated with antireflection film, chip will stick on silicon chip, and the coated with antireflection membrane process is impacted, the situations such as antireflective coating is inhomogeneous occur, and then cause loss economically.If when the inhomogeneous silicon chip of antireflective coating is carried out the printing-sintering of electrode,, because the antireflective coating at the position of covering chip is thinner, be easy to penetrate PN junction in sintering process, cause the solar cell electric leakage, and then affect the qualification rate of solar battery sheet.
Based on this, the utility model provides a kind of coated with antireflection film device, the problems referred to above that exist to overcome prior art, comprise charging chamber, preheating chamber, processing chamber, cooling chamber and discharging chamber, the top of described charging chamber, described preheating chamber and described processing chamber all is provided with a gas purging device at least, and the bottom of described charging chamber, described preheating chamber and described processing chamber all is provided with a chip relief outlet at least.
The coated with antireflection film device that the utility model provides, before silicon chip is carried out the coated with antireflection film, at first the charging chamber of coated with antireflection film device, preheating chamber and processing chamber are cleared up, chip of remaining in the cracked silicon chip in chamber etc. is cleaned out, prevent that chip from adhering on a collection of silicon chip that will put into the coated with antireflection film device, guarantee that the antireflective coating uniformity coefficient is high, quality of reflection reduction film is high.
Be more than core concept of the present utility model, for making above-mentioned purpose of the present utility model, feature and advantage, can more become apparent, below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail.
A lot of details have been set forth in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here and implement, those skilled in the art can be in the situation that do similar popularization without prejudice to the utility model intension, so the utility model is not subjected to the restriction of following public specific embodiment.
Secondly, the utility model is described in detail in conjunction with schematic diagram, when the utility model embodiment is described in detail in detail; for ease of explanation; the sectional view of indication device structure can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of the utility model protection at this.The three-dimensional space that should comprise in addition, length, width and the degree of depth in actual fabrication.
Embodiment one
The present embodiment provides a kind of coated with antireflection film device, improves on traditional chain type PECVD coated with antireflection film device.This coated with antireflection film device inside comprises five chambers, is followed successively by the charging chamber, preheating chamber, processing chamber, cooling chamber and discharging chamber.The top of described charging chamber, described preheating chamber and described processing chamber all is provided with a gas purging device at least, the bottom of described charging chamber, described preheating chamber and described processing chamber all is provided with a chip relief outlet at least, wherein, the chip relief outlet is vacuum state, is not subjected to other gases affects while guaranteeing the coated with antireflection film.
In charging chamber, preheating chamber and processing chamber, gas purging device is set, a collection of silicon chip is being put into before the coated with antireflection film device carries out the coated with antireflection film, at first adopt compressed nitrogen to purge cleaning to charging chamber, preheating chamber and processing chamber, guarantee the cleaning of charging chamber, preheating chamber and processing chamber, avoided chip to adhere on this batch silicon chip, reduced the situation that the aberration sheet occurs, improve the qualification rate of coated with antireflection film, and then improved the qualification rate of making solar cell.
Quality for the follow-up printing-sintering operation that guarantees to prepare solar cell, can also all be provided with at least a gas purging device in described cooling chamber and described discharging chamber roof, described cooling chamber and described discharging cavity bottom all are provided with a chip relief outlet at least, while preventing that silicon chip after the coated with antireflection film is through cooling chamber and discharging chamber, chip in described cooling chamber and described discharging chamber adheres on antireflective coating, to follow-up, prints electrode and sintering circuit generation detrimentally affect.
As shown in Figure 1, a kind of coated with antireflection film device structural representation that provides for the present embodiment.The center of top zone of described charging chamber 1, described preheating chamber 2, described processing chamber 3, described cooling chamber 4 and described discharging chamber 5 is provided with a gas purging device 11.Each position, angle, bottom of described charging chamber 1, described preheating chamber 2, described processing chamber 3, described cooling chamber 4 and described discharging chamber 5 is provided with a chip relief outlet 12.
As shown in Figure 2, the another kind of coated with antireflection film device structural representation that provides for the present embodiment.The center of top zone of described charging chamber 1, described preheating chamber 2, described processing chamber 3, described cooling chamber 4 and described discharging chamber 5 is provided with a gas purging device 11.Each fringe region of bottom of described charging chamber 1, described preheating chamber 2, described processing chamber 3, described cooling chamber 4 and described discharging chamber 5 all is provided with a chip relief outlet 12 at least.
As shown in Figure 3, another the coated with antireflection film device structural representation that provides for the present embodiment.The center of top zone of described charging chamber 1, described preheating chamber 2, described processing chamber 3, described cooling chamber 4 and described discharging chamber 5 and each position, angle, top are provided with a gas purging device 11.Each position, angle, bottom of described charging chamber 1, described preheating chamber 2, described processing chamber 3, described cooling chamber 4 and described discharging chamber 5 is provided with a chip relief outlet 12.
As shown in Figure 4, another the coated with antireflection film device structural representation that provides for the present embodiment.The center of top zone of described charging chamber 1, described preheating chamber 2, described processing chamber 3, described cooling chamber 4 and described discharging chamber 5 and each position, angle, top are provided with a gas purging device 11.Each fringe region of bottom of described charging chamber 1, described preheating chamber 2, described processing chamber 3, described cooling chamber 4 and described discharging chamber 5 all is provided with a chip relief outlet 12 at least.
Need to prove, in the coated with antireflection film device, the quantity of gas purging device and chip relief outlet and position are not limited in several modes that above-described embodiment provides, and the circle that provides in figure is provided the chip relief outlet, can be the shapes such as rectangle.And the quantity of the blow device in each chamber and chip relief outlet and position can be not identical yet, can design according to practical situation, are not limited in above-mentioned several embodiment.
Another coated with antireflection film device structural representation for example shown in Figure 5, as to provide for the present embodiment:
The center of top zone of described charging chamber 1, described preheating chamber 2, described processing chamber 3 is provided with a gas purging device 11, each position, angle, bottom of described charging chamber 1, described preheating chamber 2, described processing chamber 3 is provided with a chip relief outlet 12, and the chip outlet 12 of wherein said charging chamber 1, described preheating chamber 2, described processing chamber 3 is circular.Center of top zone and each position, angle, top of described cooling chamber 4 and described discharging chamber 5 are provided with a gas purging device 11, each fringe region of bottom of described cooling chamber 4 and described discharging chamber 5 all is provided with a chip relief outlet 12 at least, wherein, the chip relief outlet 12 that is positioned at each fringe region of bottom of described cooling chamber 4 and described discharging chamber 5 is bar shaped.
in above-mentioned design, the coated with antireflection film device is divided for two portions, charging chamber in first part, the quantity of the gas purging device in preheating chamber and processing chamber and chip relief outlet and position are all identical, gas purging device in second section in cooling chamber and discharging chamber and the quantity of chip outlet are all identical with position, and the quantity of the gas purging device of first part and second section is different with position, and the quantity of chip outlet, position and shape are all different, as long as can clean out coated with antireflection film device inner cavity chamber, be not limited to its design.
The gas purging device that the present embodiment provides is nitrogen purging device, charging chamber in the coated with antireflection film device, preheating chamber and processing chamber are carried out the nitrogen purging cleaning, avoided the last consignment of silicon chip in the inner transport process of coated with antireflection film device because vibrations make the low silicon chip of physical strength chipping, the situation that chip remains on chamber inner wall and track occurs, and has guaranteed the cleaning of coated with antireflection film internal chamber; Cooling chamber and discharging chamber to described coated with antireflection film device carry out the nitrogen purging cleaning, improved the making quality of the follow-up printing-sintering operation for preparing solar cell, guaranteed that electrode and silicon chip form good ohmic contact, have improved the qualification rate of solar cell.Wherein, described nitrogen purging time range is 30s-120s, comprises endpoint value; Described nitrogen purging flow range is 5L/min-50L/min, comprises endpoint value.
adopt above-mentioned coated with antireflection film device, before a collection of silicon chip is carried out the coated with antireflection film, at first to the charging chamber in the coated with antireflection film device, preheating chamber and processing chamber are cleared up, avoided the last consignment of silicon chip in the inner transport process of coated with antireflection film device because vibrations make the low silicon chip of physical strength chipping, the situation that chip remains on chamber inner wall and track occurs, guaranteed the cleaning of coated with antireflection film internal chamber, thereby make the cleaning of coated surface when the coated with antireflection film of silicon chip, improved the qualification rate of antireflective coating, and then improved the product qualified rate of solar battery sheet.
, to the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the utility model.Multiple modification to these embodiment will be apparent for those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from spirit or scope of the present utility model, realization in other embodiments.Therefore, the utility model will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. coated with antireflection film device, comprise charging chamber, preheating chamber, processing chamber, cooling chamber and discharging chamber, it is characterized in that, the top of described charging chamber, described preheating chamber and described processing chamber all is provided with a gas purging device at least, and the bottom of described charging chamber, described preheating chamber and described processing chamber all is provided with a chip relief outlet at least.
2. coated with antireflection film device according to claim 1, it is characterized in that, the top of described cooling chamber and described discharging chamber all is provided with a gas purging device at least, and described cooling chamber and described discharging cavity bottom all are provided with a chip relief outlet at least.
3. coated with antireflection film device according to claim 2, is characterized in that, the center of top zone of described charging chamber, described preheating chamber, described processing chamber, described cooling chamber and described discharging chamber is provided with a gas purging device.
4. coated with antireflection film device according to claim 2, it is characterized in that, the center of top zone of described charging chamber, described preheating chamber, described processing chamber, described cooling chamber and described discharging chamber and each position, angle, top are provided with a gas purging device.
5. coated with antireflection film device according to claim 2, is characterized in that, each position, angle, bottom of described charging chamber, described preheating chamber, described processing chamber, described cooling chamber and described discharging chamber is provided with a chip relief outlet.
6. coated with antireflection film device according to claim 2, is characterized in that, each fringe region of bottom of described charging chamber, described preheating chamber, described processing chamber, described cooling chamber and described discharging chamber all is provided with a chip relief outlet at least.
7. according to claim 1-6 described coated with antireflection film devices of any one claim, is characterized in that, described gas purging device is nitrogen purging device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203728308U CN203295602U (en) | 2013-06-26 | 2013-06-26 | Device for coating antireflection film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203728308U CN203295602U (en) | 2013-06-26 | 2013-06-26 | Device for coating antireflection film |
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| Publication Number | Publication Date |
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| CN203295602U true CN203295602U (en) | 2013-11-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2013203728308U Expired - Lifetime CN203295602U (en) | 2013-06-26 | 2013-06-26 | Device for coating antireflection film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110517988A (en) * | 2019-09-16 | 2019-11-29 | 富芯微电子有限公司 | A kind of igbt chip and its processing technology and process equipment with compound grid structure |
| CN115305460A (en) * | 2022-08-02 | 2022-11-08 | 江苏微导纳米科技股份有限公司 | Semiconductor processing chamber and PECVD (plasma enhanced chemical vapor deposition) coating equipment |
-
2013
- 2013-06-26 CN CN2013203728308U patent/CN203295602U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110517988A (en) * | 2019-09-16 | 2019-11-29 | 富芯微电子有限公司 | A kind of igbt chip and its processing technology and process equipment with compound grid structure |
| CN115305460A (en) * | 2022-08-02 | 2022-11-08 | 江苏微导纳米科技股份有限公司 | Semiconductor processing chamber and PECVD (plasma enhanced chemical vapor deposition) coating equipment |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131120 |