CN108091722A - A kind of automatic loading/unloading and automatic flaps system and its method of work - Google Patents
A kind of automatic loading/unloading and automatic flaps system and its method of work Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000011068 loading method Methods 0.000 title claims abstract description 28
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 68
- 238000006243 chemical reaction Methods 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 91
- 229910052710 silicon Inorganic materials 0.000 claims description 88
- 239000010703 silicon Substances 0.000 claims description 88
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 81
- 229910052757 nitrogen Inorganic materials 0.000 claims description 41
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 230000003749 cleanliness Effects 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 26
- 230000005540 biological transmission Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 4
- 230000007306 turnover Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 206010021143 Hypoxia Diseases 0.000 description 2
- 239000000809 air pollutant Substances 0.000 description 2
- 231100001243 air pollutant Toxicity 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000009365 direct transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 208000018875 hypoxemia Diseases 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of automatic loading/unloading and automatic flaps systems and its method of work, the slitless connection of the system and PECVD device, automatic flaps process between the PECVD device loading and unloading process of two-sided heterojunction solar battery and two PECVD systems provides the working environment of a high-cleanness, high, low humidity, low oxygen content, solves the difficulty that production capacity and battery conversion efficiency cannot be taken into account simultaneously in two-sided heterojunction solar battery preparation process.
Description
Technical field：
It is more particularly to therein the present invention relates to the volume production PECVD device field for preparing film/silicon/crystalline silicon heterojunction solar battery
A kind of automatic loading/unloading and automatic flaps system and its method of work.
Background technology：
Film/silicon/crystalline silicon heterojunction solar battery (hereinafter referred to as heterojunction solar battery) belongs to third generation high-efficiency solar electricity
Pool technology, it combines the advantage of first generation crystal silicon and second generation silicon thin film, has the spies such as high conversion efficiency, temperature coefficient be low
Point, particularly two-sided heterojunction solar battery transfer efficiency can reach more than 26%, have a vast market prospect.
The pecvd process section of two-sided heterojunction solar battery is being prepared, to avoid cross contamination, it is necessary to which 2 PECVD are set
It is standby, an I/N overlay film for being used for silicon chip one side, another overlay film for being used for silicon chip another side I/P.Between two PECVD devices
Linking, conventional method is using manual delivery and turn-over, however this method has shortcomings, when can increase fragment rate and
Unstability；Second is that since the preparation condition of heterojunction solar battery in itself will strictly much compared with other batteries, work
Skill processing procedure is high to the clean level requirement of silicon chip surface, and silicon chip is easily aoxidized and polluted at high temperature, so working as silicon
Piece goes out from PECVD device should make silicon temperature be down to room temperature when piece chamber comes out, and otherwise battery efficiency will decline.Obviously, cool down
Process can consume a longer time, influence the production capacity of equipment.
On the other hand, since the effect of heterojunction solar battery crystal silicon part is to absorb luminous energy, so would generally be in silicon
Piece surface prepares suede structure to enhance light absorpting ability；And the film portion of heterojunction solar battery includes to build
N or P layers and I layers of the passivation layer for compensating dangling bonds of internal electric field, so film portion thickness usually only has 3-15nm, especially
It is that I layers of amorphous silicon film thickness are generally less than 10nm, this is much smaller than hundred nanometer scale thickness of general thin solar cell.Very
The thin film thickness inevitable requirement very short coating technique time, if the process time of I layers of amorphous silicon membrane is 10-60s.Very short work
The skill time makes it possible the raising of industrial production capacity, but this require other steps of battery take must good matching technique when
Between.At this point, the time expended when being waited described in leading portion because cooling down obviously becomes the bottleneck for promoting production capacity.Therefore, if silicon can be omitted
Piece temperature-fall period makes its direct high temperature transmission and not oxidized and pollution, will realize the purpose of high production capacity high conversion efficiency, band
Carry out huge commercial value.
The content of the invention：
It to solve the above-mentioned problems, should the present invention provides a kind of automatic loading/unloading and automatic flaps system and its method of work
The slitless connection of system and PECVD device is the PECVD device loading and unloading process and Liang Tai of two-sided heterojunction solar battery
Automatic flaps process between PECVD system provides a high-cleanness, high, low humidity, the working environment of low oxygen content, solution
The difficulty that production capacity and battery conversion efficiency cannot be taken into account simultaneously in two-sided heterojunction solar battery preparation process of having determined.
For this purpose, the present invention provides a kind of automatic loading/unloading and automatic flaps system, applied to two containing it is independent into
Piece chamber goes out in piece chamber and the PECVD device of reaction chamber, the system comprises：Nitrogen room is less than or equal to for providing cleanliness factor
0.5 100 grades of micron particles object, oxygen content are less than 10% nitrogen environment less than 5%, relative humidity；Two sets of automatic charging devices,
It is docked respectively with two PECVD devices into piece chamber, the silicon chip feeding for completing to the PECVD device works；Two
Automatic blanking device is covered, the piece chamber that goes out with two PECVD devices is docked respectively, for completing to the PECVD device
Silicon slice charging works；
Automatic face-overturning device is arranged between two adjacent PECVD devices, for completing the overturning work of the silicon chip；Institute
Automatic charging device, automatic blanking device, automatic face-overturning device is stated to be respectively positioned in the nitrogen room；The PECVD device is used for
Prepare two-sided film/silicon/crystalline silicon heterojunction solar battery.
Optionally, the reaction chamber technological temperature of the PECVD device is 160-280 DEG C.
Optionally, the automatic charging device carries out the temperature of silicon chip feeding work higher than 60 DEG C.
Optionally, the automatic blanking device carries out the temperature of silicon slice charging work higher than 80 DEG C.
Optionally, the nitrogen room is less than 15 minutes since initial inflated with nitrogen to the time for reaching the nitrogen environment,
The nitrogen room since being discharged nitrogen to reach oxygen content be 20% time be less than 10 minutes.
Optionally, belt transport process, the belt are contained in the silicon chip feeding of the PECVD device or blanking work
The port number of transmission is 1-10, and the automatic face-overturning device number and the port number of the belt transport are consistent.
In addition, the present invention also provides a kind of automatic loading/unloading and the method for work of automatic flaps system, this method applications
During two-sided film/silicon/crystalline silicon heterojunction solar battery is prepared, the automatic loading/unloading and automatic flaps system are located at
Cleanliness factor is less than or equal to 100 grades of 0.5 micron particles object, and oxygen content is less than 5%, and relative humidity is less than in 10% nitrogen environment,
The method of work comprises the following steps：
The first step, first set automatic charging device are completed to work to the silicon chip feeding of First PECVD device into piece chamber；
Second step completes N layers or I layers P layers of the I layers of the silicon chip one side in the reaction chamber of the First PECVD device
Amorphous silicon membrane overlay film；
3rd step, the completion of first set automatic blanking device go out the First PECVD device silicon slice charging work of piece chamber；
4th step, automatic face-overturning device complete the overturning work of the silicon chip；
5th step, second set of automatic charging device are completed to work to the silicon chip feeding of second PECVD device into piece chamber；
6th step completes P layers or I layers N of I layers of the silicon chip another side in the reaction chamber of second PECVD device
The amorphous silicon membrane overlay film of layer；
7th step, second set of automatic blanking device completion go out second PECVD device the silicon slice charging work of piece chamber.
Optionally, the First and the reaction chamber technological temperature of second PECVD device are 160-280 DEG C, described
The temperature that first set and second set of automatic charging device carry out silicon chip feeding work is above 60 DEG C, the first set and second set
The temperature that automatic blanking device carries out silicon slice charging work is above 80 DEG C.
Compared with the prior art, presently disclosed technological means has following technique effect：
1, by the way that automatic loading/unloading and automatic flaps system are arranged in the nitrogen room of hypoxemia, low humidity, high-cleanness, high, can keep away
Exempt from high temperature silicon chip to contact directly with air during loading and unloading, turn-over etc., run into oxygen, steam so as to overcome wafer high temperature
The problem of being aoxidized and being easily polluted by the external foreign matters, while the direct transmission of high temperature silicon chip is realized again, silicon chip is avoided because of temperature change needs
Time caused by and wastes, and economic benefit is apparent.
2, on the one hand automatic face-overturning device can reduce the fragment rate of silicon chip and reduce unstability, while can also be at certain
There is breakage when failures in piece or some silicon chips, without stopping entire processing procedure, play preferable buffering, do not influence entire different
The production of matter joint solar cell.
3, it is mounted in automatic loading/unloading and the nitrogen room of automatic flaps system full of cleaning of the purity for 99.9%, drying
Nitrogen, and the cleanliness factor passed through in the self-circulation system nitrogen room of gas in nitrogen room reaches 0.5 micron particles object 100
Grade, can cause the air pollutants in nitrogen room to be preferably minimized, so that the air pollutants in nitrogen room and each department are not
Same pollution situation is unrelated, only related to the nitrogen gas purity of filling.Therefore manufacturing enterprise need not transform workshop, economic effect
Substantially.
4, multi-channel structure is designed to the automatic corresponding transmission belt of feeding, discharge device to reduce the transmission of belt speed
Degree, the harmful effect that belt is made to be generated when meeting and overcoming silicon chip and belt because relative motion while carrying capacity requirement,
The making herbs into wool face of significantly reducing damaged condition.
5, by the time control of the initial inflated with nitrogen in nitrogen room nitrogen environment to required by reaching within 15 minutes, nitrogen room
Discharge nitrogen within 10 minutes, can effectively shorten plant maintenance, maintenance, guarantor to the time control that oxygen content is 20%
The foster time improves equipment operating efficiency.
Description of the drawings：
Fig. 1：The structure diagram of pecvd process section in two-sided heterojunction solar battery producing line is produced in one embodiment of the invention
Fig. 2：The structure diagram of first set automatic charging device in one embodiment of the invention
Fig. 3：The structure diagram of first set automatic blanking device in one embodiment of the invention
Fig. 4：Automatic face-overturning device operating diagram in the present invention
Fig. 5：Automatic loading/unloading and automatic flaps system method of work flow diagram in the present invention
Specific embodiment：
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the tool of the present invention
Body embodiment is described in detail.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still the present invention can be with
Implemented using other different from other methods described here, therefore the present invention is from the limit of following public specific embodiment
System.
Fig. 1, which is shown, produces pecvd process section in two-sided heterojunction solar battery producing line in one embodiment of the invention
Structure diagram has been directed to First PECVD device 100, second PECVD devices 200 and automatic loading/unloadings and automatic
Flaps system.The automatic loading/unloading and automatic flaps service system include 500, two sets of nitrogen room, 301 and of automatic charging device
401st, two sets of automatic blanking devices 302 and 402, automatic face-overturning devices 601.Wherein, automatic charging device 301 and 401, it is automatic under
Material device 302 and 402, automatic face-overturning device 601 are in nitrogen room 500, in order to farthest reduce pollutant, nitrogen
Nitrogen gas purity requirement provides cleanliness factor higher than 99.9%, in the nitrogen room less than or equal to 100 grades of 0.5 micron particles object, oxygen in room
Gas content is less than 5%, relative humidity be less than 10% nitrogen environment, the pressure in nitrogen room is slightly above external pressure, as pressure difference is
10mbar.In the present invention, the initial inflated with nitrogen in nitrogen room is set smaller than 15 minutes to the dynamically balanced time is reached, discharge
Nitrogen to the time that oxygen content is 20% is set smaller than 10 minutes, and such time, which is set, can effectively shorten equipment
It safeguards, overhaul, the time of maintenance, improving equipment operating efficiency.
Automatic charging device 301,401 is respectively with First PECVD device 100 into piece chamber 101, second in Fig. 1
PECVD device 200 is docked into piece chamber 201, for completing to work to silicon chip feeding；Automatic blanking device 302,402 respectively with
The piece chamber 202 that goes out for going out 102, second PECVD devices 200 of piece chamber of First PECVD device 100 is docked, for completing to silicon
The blanking work of piece；Automatic face-overturning device 601 is arranged at adjacent First PECVD device 100 and second PECVD device
Between 200, for overturning silicon chip.
First PECVD device 100 and second PECVD device 200 can realize the overlay film of I layers P layers or I layers N layers, such as
Can making the reaction chamber 103 in First PECVD device, reaction chamber 104 is used for N layers of overlay film for I layers of overlay film；It can make second
For reaction chamber 203 in PECVD device for I layers of overlay film, reaction chamber 204 is used for P layers of overlay film, naturally it is also possible to have other overlay films
It arranges.The reaction chamber Process temperature ranges of First PECVD device 100 and second PECVD device 200 are 160-280 DEG C.This
The structure of two PECVD devices does not do particular/special requirement in invention, can be U-shaped, can be that cluster formula is polygonal, it might even be possible to be
In-line arrangement, as long as ensureing that there is PECVD device independent vacuum to go out piece chamber into piece chamber and vacuum.
Fig. 2 show the structure diagram of first set automatic charging device 301, assumes responsibility for removing silicon chip from the gaily decorated basket 311
It is transported to the task into piece chamber 101, the gaily decorated basket 311 can carry the pending silicon chip of multi-disc, such as 100 156mm*156mm of carrying
Silicon chip, the first set automatic charging device 301 include telescoping mechanism（It is not shown）, for silicon chip to be taken from the gaily decorated basket 311
Go out to be placed on transmission belt 312, be sent after belt transport into 101 vicinity of piece chamber, then by sucker manipulator 313 by silicon chip
It is carried to successively on pallet, subsequently into piece chamber 101.When the pallet of carrying silicon chip is successively by reaction chamber 103, transmission
After chamber, reaction chamber 104, it can finally be taken out of using piece chamber 102 is gone out by first set automatic blanking device 302 to First PECVD
Outside equipment 100.The above process is coherent process, and is not required to especially reserve the time of silicon chip cooling or heating.Due to hetero-junctions
Reaction chamber coated temperature is generally 160-280 DEG C in solar battery process, there are certain thermal loss in pallet transmit process,
So when pallet is from when going out the taking-up of piece chamber 102, the temperature range of pallet is such as common for 80-180 DEG C higher than 80 DEG C.Shown in Fig. 3
For the structure diagram of first set automatic blanking device 302, with 301 structure of first set automatic charging device in Fig. 2 just on the contrary,
For by silicon chip, from going out in piece chamber 102 to take out of and be placed in the gaily decorated basket 312, in this process, sucker manipulator 313 first will
Silicon chip takes out from pallet and puts to transmission belt 322, then is loaded into after belt transport and send into the gaily decorated basket 321.And take sky
Pallet afterwards is then transported back to first set automatic charging device 301（Reference can be made to Fig. 1）, to repeat the carrying of follow-up silicon chip
And transport.Due in pallet transmit process there are thermal loss, so when pallet is entered in subsequent cycle into piece chamber 101
When temperature be generally greater than 60 DEG C, such as it is common for 70-90 DEG C.It should be noted that the application is to automatic charging device and certainly
The concrete structure of dynamic blanking device is not limited, except above-mentioned belt transport, vacuum suction mode in addition to, it can also be taken
His mode.
So far, the silicon chip in the gaily decorated basket 321 has been only completed the overlay film of one side, such as has completed the overlay film of I layers and N layers, also
The I layers and P layers of overlay film, automatic face-overturning device 601 for needing progress another side realize the function of overturning the gaily decorated basket 321, and Fig. 4 is
The operating diagram of automatic face-overturning device 601, it can be seen that by overturning, the position of silicon chip 501 and 510 occurs to overturn, up and down
Surface also changes correspondingly so that silicon chip can carry out the plated film of another side in second PECVD device 200.It is this for whole
A gaily decorated basket carries out the design of turn-over, can flexibly be overhauled when breakage failure occur in certain piece or some silicon chips, without stopping
Entire processing procedure, as long as and remove the gaily decorated basket equipped with problem silicon chip, preferable cushioning effect can be played, do not influenced entire heterogeneous
The production of joint solar cell.
By after turn-over, silicon chip can be sent in second PECVD device 200 silicon chip by second set of automatic charging device 401
Overlay film is carried out, is then drawn off by second set of automatic blanking device 421.This process is with silicon chip in First PECVD device
It is completely the same in 100, it has been documented above, details are not described herein again.
The present invention also provides a kind of automatic loading/unloading and the method for work of automatic flaps system, this method is applied to prepare
During two-sided heterojunction solar battery, Fig. 5 shows the flow diagram of this method of work, with reference to Fig. 1, the method
Comprise the following steps：
The first step, first set automatic charging device 301 complete the silicon chip feeding work into piece chamber 101 to First PECVD device 100
Make；
Second step completes N layers of the I layers of the silicon chip one side in the reaction chamber 103,104 of the First PECVD device 100
Or I layers P layers of amorphous silicon membrane overlay film；
3rd step, first set automatic blanking device 302 are completed under the silicon chip of piece chamber 102 the First PECVD device 100
Expect work；
4th step, automatic face-overturning device 601 complete the overturning work of the silicon chip；
5th step, second set of automatic charging device 401 complete the silicon chip feeding work into piece chamber 201 to second PECVD device 200
Make；
6th step completes the I layers P of the silicon chip another side in the reaction chamber 203,204 of second PECVD device 200
Layer or I layers N layers of amorphous silicon membrane overlay film；
7th step, second set of automatic blanking device 402 are completed under the silicon chip of piece chamber 202 second PECVD device 200
Expect work.
In this method of work, the automatic loading/unloading and automatic flaps system should be micro- less than or equal to 0.5 positioned at cleanliness factor
100 grades of rice grain object, oxygen content are less than 5%, and relative humidity is less than in 10% nitrogen environment.Reaction chamber in above-mentioned second step
103rd, 104 and the 6th the Process temperature ranges of reaction chamber 203,204 in step be 160-280 DEG C.Due to being deposited in pallet transmit process
In certain thermal loss, so in the third step when pallet is from when going out the taking-up of piece chamber 102, the temperature range of pallet and silicon chip is basic
Be maintained at 80-180 DEG C, after silicon slice charging is completed, empty pallet can be transported back to automatic charging device 301 sentence carry out it is next
The carrying and transmission of batch silicon chip, the temperature range when pallet is again introduced into piece chamber 101 is generally at 60-160 DEG C.Same road
Reason, when the 5th step automatic charging device 401 carries out feeding work to silicon chip, the temperature range for carrying silicon chip pallet is also 60-
160℃。
In this application, since automatic loading/unloading and automatic flaps system are provided in hypoxemia（Less than 5%）, low humidity（Relatively
Humidity is less than 10%）, high-cleanness, high（Less than or equal to 100 grades of 0.5 micron particles object）Nitrogen room in, even so silicon chip from
It is higher temperature to go out temperature when piece chamber is taken out（80 DEG C or more）, can also silicon chip be avoided to be contacted directly with air, overcome silicon
A series of problems that piece high temperature runs into oxygen, steam is aoxidized and is easily polluted by the external foreign matters, meanwhile, and since silicon chip keeps high temperature direct
Transmission is allowed to save time waste caused by due to temperature change, it is possible to greatly improve production capacity.
Further, since the I layer amorphous silicon film overlay film thickness of heterojunction solar battery is generally less than 10nm, corresponding technique
Time is very short（About 10-60s）, in order to improve production capacity, it is necessary to so that taking for other steps of battery being capable of the matching technique time.In
It is the transmission speed that can industrially attempt to improve belt, however, cell photoelectric transfer efficiency can be caused by improving belt transport speed
Decline, for this purpose, in a preferred approach, multi-channel structure being designed to transmission belt and reduces its transmission speed, such as can be set
The belt transport of 1-10 passages is counted into, belt is made to overcome silicon chip while carrying capacity requirement is met with belt because of opposite fortune
Dynamic and generation harmful effect, significantly reduces making herbs into wool face damaged condition.It is pointed out that automatic face-overturning device at this time
Number, the number of support plate mechanism should be all consistent with the channel number of belt.
It is disclosed as above with preferred embodiment although this law is bright, present invention is not limited to this.Any this field skill
Art personnel are not departing from the bright spirit and scope of this law, can make various changes or modifications, therefore protection scope of the present invention
It should be subject to claim limited range.
Claims (8)
1. a kind of automatic loading/unloading and automatic flaps system, applied to two containing it is independent into piece chamber, go out piece chamber and reaction
In the PECVD device of chamber, it is characterised in that：The system comprises：
Nitrogen room is small less than 5%, relative humidity less than or equal to 100 grades of 0.5 micron particles object, oxygen content for providing cleanliness factor
In 10% nitrogen environment；
Two sets of automatic charging devices dock respectively with two PECVD devices into piece chamber, for completing to the PECVD
The silicon chip feeding work of equipment；
Two sets of automatic blanking devices, respectively the piece chamber that goes out with two PECVD devices dock, for complete to the PECVD
The silicon slice charging work of equipment；
Automatic face-overturning device is arranged between two adjacent PECVD devices, for completing the overturning work of the silicon chip；
The automatic charging device, automatic blanking device, automatic face-overturning device are respectively positioned in the nitrogen room；
The PECVD device is used to prepare two-sided film/silicon/crystalline silicon heterojunction solar battery.
2. a kind of automatic loading/unloading according to claim 1 and automatic flaps system, it is characterised in that：The PECVD is set
Standby reaction chamber technological temperature is 160-280 DEG C.
3. a kind of automatic loading/unloading according to claim 2 and automatic flaps system, it is characterised in that：The automatic charging
The temperature that device carries out silicon chip feeding work is higher than 60 DEG C.
4. a kind of automatic loading/unloading according to claim 2 and automatic flaps system, it is characterised in that：The automatic blanking
The temperature that device carries out silicon slice charging work is higher than 80 DEG C.
5. a kind of automatic loading/unloading according to claim 4 and automatic flaps system, it is characterised in that：The nitrogen room from
Initial inflated with nitrogen starts to the time for reaching the nitrogen environment to be less than 15 minutes, the nitrogen room since being discharged nitrogen to up to
It is less than 10 minutes to the time that oxygen content is 20%.
6. a kind of automatic loading/unloading according to claim 1 and automatic flaps system, it is characterised in that：The PECVD is set
Containing belt transport process in standby silicon chip feeding or blanking work, the port number of the belt transport is 1-10, it is described from
Dynamic slice turning device number and the port number of the belt transport are consistent.
7. the method for work of a kind of automatic loading/unloading according to claim 1 and automatic flaps system, this method are applied to
During preparing two-sided film/silicon/crystalline silicon heterojunction solar battery, it is characterised in that：The automatic loading/unloading and automatic flaps
System is located at cleanliness factor less than or equal to 100 grades of 0.5 micron particles object, and oxygen content is less than 5%, and relative humidity is less than 10% nitrogen
In environment, the method for work comprises the following steps：
The first step, first set automatic charging device are completed to work to the silicon chip feeding of First PECVD device into piece chamber；
Second step completes N layers or I layers P layers of the I layers of the silicon chip one side in the reaction chamber of the First PECVD device
Amorphous silicon membrane overlay film；
3rd step, the completion of first set automatic blanking device go out the First PECVD device silicon slice charging work of piece chamber；
4th step, automatic face-overturning device complete the overturning work of the silicon chip；
5th step, second set of automatic charging device are completed to work to the silicon chip feeding of second PECVD device into piece chamber；
6th step completes P layers or I layers N of I layers of the silicon chip another side in the reaction chamber of second PECVD device
The amorphous silicon membrane overlay film of layer；
7th step, second set of automatic blanking device completion go out second PECVD device the silicon slice charging work of piece chamber.
8. the method for work of a kind of automatic loading/unloading according to claim 7 and automatic flaps system, it is characterised in that：Institute
The reaction chamber technological temperature for stating First and second PECVD device is 160-280 DEG C, and the first set and second set are automatic
The temperature that feeding device carries out silicon chip feeding work is above 60 DEG C, and the first set and second set of automatic blanking device carry out silicon
The temperature of piece blanking work is above 80 DEG C.
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