CN111118478A - PECVD equipment for preparing heterojunction battery thin film - Google Patents
PECVD equipment for preparing heterojunction battery thin film Download PDFInfo
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- CN111118478A CN111118478A CN201911421169.3A CN201911421169A CN111118478A CN 111118478 A CN111118478 A CN 111118478A CN 201911421169 A CN201911421169 A CN 201911421169A CN 111118478 A CN111118478 A CN 111118478A
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses PECVD equipment for preparing a heterojunction battery film, which comprises a material carrying plate, a laminated carrier, a first preheating cavity, a first process cavity group, a first unloading cavity, a sheet overturning area, a second preheating cavity, a second process cavity group and a second unloading cavity which are sequentially butted, wherein the first process cavity group comprises at least two process cavities which are sequentially butted, the second process cavity group comprises at least two process cavities which are sequentially butted, a transmission mechanism for transmitting the material carrying plate is arranged in each cavity, the laminated carrier is arranged on the material carrying plate, the laminated carrier comprises a plurality of layers of carrier sheets, a discharging station and a feeding station are arranged in the sheet overturning area, the discharging station and the feeding station are both provided with the transmission mechanisms, a piece taking and placing turnover device which takes out the slide glass of the laminated carrier on the discharging station, turns the slide glass 180 degrees and then places the slide glass on the laminated carrier on the feeding station is arranged between the feeding station and the discharging station. The invention has the advantages of small integral occupied area of the equipment, low cost and small maintenance difficulty.
Description
Technical Field
The invention relates to solar cell preparation, in particular to PECVD equipment for preparing a heterojunction cell film.
Background
The energy problem gradually becomes a main factor for restricting the development of the global social economy. Solar energy is inexhaustible clean energy. The amorphous silicon/crystalline silicon heterojunction solar cell is concerned by a plurality of countries internationally due to the characteristics of high conversion efficiency, relatively simple structure, less process flow, low temperature, low energy consumption, small temperature coefficient and the like, and has wide market prospect. The HIT amorphous silicon/crystalline silicon heterojunction solar cell, first proposed by the japan ocean corporation, is mainly composed of an electrode, an oxidized transparent conductive layer, an intrinsic amorphous silicon thin film layer, and a doped amorphous silicon thin film layer.
Pecvd (plasma Enhanced Chemical Vapor deposition) is a short term for plasma Enhanced Chemical Vapor technology, and is a major technique for preparing intrinsic amorphous silicon thin films/doped amorphous silicon thin films at present. The preparation method utilizes glow discharge plasma to decompose SiH4 and other gas source molecules, thereby realizing the preparation of the amorphous silicon film. The principle is as follows: electrons in the reaction gas are accelerated in an external electric field to obtain energy to perform primary reaction with the reaction gas, so that gas molecules are ionized and decomposed to form plasma. A large number of chemically active ions, neutral atoms and molecular products in the plasma are transported to the film growth surface while undergoing secondary reactions with each other. The various primary reaction products and secondary reaction products reaching the film growth surface are adsorbed by the substrate and react with the surface, and other products are released out at the same time, and finally the film is formed.
PECVD equipment for preparing amorphous silicon thin films in the current market is of a plate structure and mainly comprises the following steps: cluster type PECVD equipment, chain type PECVD equipment and U type PECVD equipment, the main shortcoming has:
(1) the plate-type PECVD equipment for preparing the amorphous silicon thin film is imported equipment, is expensive, causes high production cost and maintenance cost, and is not beneficial to popularization and application of heterojunction battery industrialization.
(2) The traditional plate type PECVD equipment slide glass carrier plate is in a single-layer plane graphite frame form, has large area, integral forming, advanced material and complex process, needs to be imported from abroad, needs to replace the whole carrier plate if the carrier plate is damaged by collision, and has high maintenance cost.
(3) The existing plate type PECVD equipment is limited by the structural form of a carrier plate, so that the size of each cavity is large, the occupied area of the equipment is large, and the high utilization rate layout of a production workshop is not facilitated.
(4) In order to reduce the production cost, large-size silicon wafers are gradually popularized and applied in the market, but the structural form of the existing plate-type PECVD equipment is compatible with the production of the large-size silicon wafers under the condition of not reducing the carrying quantity of the carrying plates, and the carrying plate area of the carrying plates needs to be further increased, so that the size of a cavity, the occupied area of the equipment, the manufacturing cost and the maintenance difficulty are increased.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides the PECVD equipment for preparing the heterojunction battery thin film, which has the advantages of small integral occupied area, low cost, small maintenance difficulty and contribution to high-utilization-rate layout of a production workshop.
In order to solve the technical problems, the invention adopts the following technical scheme:
a PECVD device for preparing heterojunction battery films comprises a material carrying plate, a laminated carrier, a first preheating cavity, a first process cavity group, a first unloading cavity, a wafer turning region, a second preheating cavity, a second process cavity group and a second unloading cavity which are sequentially butted, the first process cavity group comprises at least two process cavities which are sequentially butted, the second process cavity group comprises at least two process cavities which are sequentially butted, a transmission mechanism for transmitting the material carrying plate is arranged in each cavity, the laminated carrier is arranged on the material carrying plate and comprises a plurality of layers of carrier pieces, a discharging station and a feeding station are arranged in the piece turning area, the conveying mechanism is arranged on each of the discharging station and the feeding station, and a piece taking and placing turnover device which is used for taking out a slide glass of the laminated carrier on the discharging station, turning the slide glass by 180 degrees and then placing the slide glass on the laminated carrier on the feeding station is arranged between the discharging station and the feeding station.
As a further improvement of the above technical solution:
the laminated carrier further comprises a base and an insulating support rod, the insulating support rod is fixed on the base, the multiple layers of carrier pieces are installed on the insulating support rod, every two adjacent odd layers of carrier pieces are connected through a first electrode block from top to bottom, every two adjacent even layers of carrier pieces are connected through a second electrode block from top to bottom, a top layer electrode block is arranged on the first layer of carrier pieces, a second top layer electrode block is arranged on the second layer of carrier pieces, a first electrode jack is arranged on the top layer electrode block, and a second electrode jack is arranged on the second top layer of carrier pieces.
The first layer of carrier piece is provided with an avoidance groove for avoiding the secondary top layer of electrode block; the insulating support rod comprises a ceramic support rod and a plurality of ceramic isolation sleeves sleeved on the ceramic support rod, the carrier pieces are sleeved on the ceramic support rod, and two adjacent layers of carrier pieces are separated through one ceramic isolation sleeve.
The laminated carrier comprises a plurality of layers of carrier pieces, and the carrier pieces corresponding to the middle layer number in each layer are mutually connected; the material of the laminated carrier is one of graphite, aluminum alloy, titanium alloy, steel, ceramic and quartz.
The technical scheme includes that an electrode assembly is arranged on the outer side of a technical cavity and comprises a first electrode rod, a second electrode rod and a vertical reciprocating electric cylinder, the vertical reciprocating electric cylinder is arranged on a fixed seat of the technical cavity, the first electrode rod and the second electrode rod are connected with an electric cylinder sliding block of the vertical reciprocating electric cylinder, one end of the first electrode rod is connected with a radio frequency power supply, the other end of the first electrode rod penetrates through the technical cavity and is connected with a first electrode jack on a laminated carrier in an inserting mode, one end of the second electrode rod is connected with the radio frequency power supply, the other end of the second electrode rod penetrates through the technical cavity and is connected with a second electrode jack on the laminated carrier in an inserting mode, the first electrode rod and the second electrode rod are respectively provided with a corrugated pipe, the corrugated pipes are sleeved on the first electrode rod or the second electrode rod and are abutted to the technical cavity, and one of the first electrode rod and the second electrode rod.
The first preheating cavity, the first process cavity group, the first unloading cavity, the sheet turning area, the second preheating cavity, the second process cavity group and the second unloading cavity are distributed in a U-shaped structure, the sheet turning area is located at the bottom of the U-shaped structure, plate heaters are arranged in the first preheating cavity, the second preheating cavity and the process cavities, the first unloading cavity and the second unloading cavity are respectively provided with an air inlet system, and each process cavity is respectively provided with an air inlet system.
The air intake system of process cavity includes intake pipe, shower and flow equalizing plate, one side of process cavity is located to the intake pipe, the flow equalizing plate is located the process cavity, the shower is towards the flow equalizing plate, the intake pipe passes the process cavity and is connected with the shower, the shower is equipped with a plurality of fumaroles, be equipped with a plurality of flow equalizing holes on the flow equalizing plate, one side that the intake pipe was kept away from to the process cavity is equipped with the exhaust tube, the exhaust tube even has a vacuum pumping system.
An electrode assembly is arranged on the outer side of the process cavity, the electrode assembly comprises a positive electrode rod, one end of the positive electrode rod is connected with the positive electrode of a radio frequency power supply, the other end of the positive electrode rod is connected with the flow equalizing plate, and the cavity of the process cavity is grounded to serve as the negative electrode of the power supply.
The laminated carrier further comprises a base and an insulating supporting rod, the insulating supporting rod is fixed on the base, the multiple layers of carrier pieces are installed on the insulating supporting rod, the two adjacent layers of carrier pieces are connected through electrode blocks, a top layer electrode block is arranged on the first layer of carrier piece, and electrode jacks are formed in the top layer electrode block.
The technical scheme includes that an electrode assembly is arranged on the outer side of the technical cavity and comprises a positive electrode rod and a vertical reciprocating electric cylinder, the vertical reciprocating electric cylinder is arranged on a fixed seat of the technical cavity, the positive electrode rod is connected with an electric cylinder sliding block of the vertical reciprocating electric cylinder, one end of the positive electrode rod is connected with a radio frequency power supply, the other end of the positive electrode rod penetrates through the technical cavity and is connected with an electrode jack on the laminated carrier in an inserting mode, the positive electrode rod is provided with a corrugated pipe, the corrugated pipe is sleeved on the positive electrode rod and abutted to the technical cavity, and the technical cavity is grounded and serves as a power supply negative electrode.
Compared with the prior art, the invention has the advantages that:
according to the PECVD equipment for preparing the heterojunction battery film, the laminated carrier is of a multilayer structure, the single-layer area is small, the manufacturing difficulty is small, the cost is low, more carrier plates can be borne, the size of each cavity does not need to be increased, the overall occupied area of the equipment is small, the cost is low, the maintenance difficulty is small, and the high-utilization-rate layout of a production workshop is facilitated. And the structure of the laminated carrier has the advantages that if a single carrier piece is replaced due to damage, the maintenance cost is low, the size of the carrier piece is only slightly increased when the laminated carrier is compatible with a large-size silicon wafer, and along with the arrival of the age of the large-size silicon wafer, the novel PECVD equipment has obvious advantages in popularization and application compared with the existing equipment.
Drawings
FIG. 1 is a schematic top view of a PECVD apparatus of embodiment 1 of the present invention.
Fig. 2 is a schematic front view of a stacked carrier in embodiment 1 of the present invention.
Fig. 3 is a schematic top view of a stacked carrier in embodiment 1 of the present invention.
Fig. 4 is a schematic view of an electric field distribution of the stacked carrier in embodiment 1 of the present invention.
Fig. 5 is a schematic front view of a process chamber in embodiment 1 of the present invention.
Fig. 6 is a left side view schematically illustrating a structure of a process chamber in embodiment 1 of the present invention.
Fig. 7 is a left side view schematically illustrating a structure of a process chamber in embodiment 2 of the present invention.
Fig. 8 is a left side view schematically illustrating a structure of a process chamber in embodiment 3 of the present invention.
The reference numerals in the figures denote:
1. a material carrying plate; 2. a laminated carrier; 21. a carrier sheet; 211. an avoidance groove; 22. a base; 23. an insulating support rod; 231. a ceramic support rod; 232. a ceramic spacer sleeve; 24. a first electrode block; 26. a top layer electrode block; 261. a first electrode insertion hole; 262. an electrode insertion hole; 27. a secondary top layer electrode block; 271. a second electrode receptacle; 28. an electrode block; 31. a first preheating chamber; 32. a second preheating chamber; 41. a first unloading chamber; 42. a second unloading chamber; 5. a sheet turning area; 51. a feed station; 52. a discharge station; 6. a process chamber; 7. an electrode assembly; 71. a first electrode rod; 72. a second electrode rod; 73. vertically reciprocating the electric cylinder; 731. an electric cylinder slider; 74. a fixed seat; 75. a bellows; 76. a positive electrode rod; 8. a plate heater; 91. an air inlet pipe; 92. a shower pipe; 93. a flow equalizing plate; 94. and an air exhaust pipe.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples of the specification.
Example 1
As shown in fig. 1 to 6, the PECVD apparatus for preparing a heterojunction battery thin film of the embodiment includes a material-carrying plate 1, a stacked carrier 2, and a first preheating chamber 31, a first process chamber group, a first unloading chamber 41, a sheet-turning region 5, a second preheating chamber 32, a second process chamber group, and a second unloading chamber 42 which are sequentially butted with each other, the first process chamber group includes at least two process chambers 6 which are sequentially butted with each other, the second process chamber group includes at least two process chambers 6 which are sequentially butted with each other, a transmission mechanism (not shown in the figure) for transmitting the material-carrying plate 1 is arranged in each chamber, the stacked carrier 2 is arranged on the material-carrying plate 1, the stacked carrier 2 includes a plurality of carrier sheets 21, a discharging station 51 and a feeding station 52 are arranged in the sheet-turning region 5, the discharging station 51 and the feeding station 52 are both provided with a transmission mechanism (not shown in the figure), a transmission mechanism (not shown in the figure) is arranged between the discharging station 51 and the feeding station 52 for taking out a carrier sheet of the stacked carrier 2 on the discharging A pick-and-place sheet turning device (not shown).
The first process cavity group and the second process cavity group take two process cavities 6 as an example, the process cavities 6 are arranged according to the coating layer number and the coating type, and the four process cavities 6 are respectively a first process cavity 6, a second process cavity 6, a third process cavity 6 and a fourth process cavity 6 along the feeding direction. The laminated carrier 10 loaded with the carrier glass is preheated by a first preheating cavity 31, enters an upstream process cavity 6 of a first process cavity group, carries out coating of a first layer of intrinsic amorphous silicon thin film on the front surface of the carrier glass, then enters a downstream process cavity 6, carries out coating of a second layer of doped amorphous silicon thin film on the front surface of the carrier glass, then enters a first unloading cavity 41, then enters a glass turning area 5 to reach a discharging station 51, a glass taking and placing turning device takes out the carrier glass of the laminated carrier 2 of the discharging station 51 and turns 180 degrees, then is placed on the laminated carrier 2 of the feeding station 52, then the laminated carrier 2 of the feeding station 52 enters a second preheating cavity 32 to be preheated, then enters a front process cavity 6 and a rear process cavity 6 of a second process cavity group to carry out coating of a first layer of intrinsic amorphous silicon thin film and a second layer of doped amorphous silicon thin film on the back surface, and finally enters a second unloading cavity 42, and the laminated carrier 2 is taken out. The piece taking and placing overturning device is preferably a piece taking and placing manipulator. The laminated carrier 2 is conveyed by the conveying mechanism in each cavity. The transport mechanism is preferably a transport roller shaft.
In the PECVD equipment structure provided by the embodiment, the laminated carrier 2 is of a multilayer structure, the single-layer area is small, the manufacturing difficulty is small, the cost is low, more carrier wafers can be borne, the size of each cavity does not need to be increased, the whole occupied area of the equipment is small, the cost is low, the maintenance difficulty is small, and the high-utilization-rate layout of a production workshop is facilitated. And the structure of the laminated carrier 2 has the advantages that if a single carrier piece 21 is damaged and replaced, the maintenance cost is low, the size of the carrier piece 21 is only slightly increased when the laminated carrier is compatible with a large-size silicon wafer, and along with the arrival of the age of the large-size silicon wafer, the popularization and application of the novel PECVD equipment have obvious advantages compared with the existing equipment.
In this embodiment, the first preheating chamber 31, the first process chamber group, the first unloading chamber 41, the wafer flipping zone 5, the second preheating chamber 32, the second process chamber group, and the second unloading chamber 42 are distributed in a U-shaped configuration, and the wafer flipping zone 5 is located at the bottom of the U-shaped configuration. Each cavity adopts the distribution of U-shaped structure, turns over piece district 5 and is the flex point, and this kind of overall arrangement is reasonable, and compact structure has shortened equipment occupation space greatly.
In this embodiment, the first preheating chamber 31, the second preheating chamber 32 and each process chamber 6 are provided with a plate heater 8, the first preheating chamber 31, the second preheating chamber 32, the first unloading chamber 41 and the second unloading chamber 42 are provided with an air intake system, each process chamber 6 is provided with an air intake system, and the air intake system in the process chamber 6 introduces process gas into the process chamber 6 for a coating reaction. The gas inlet systems of the first preheating chamber 31 and the second preheating chamber 32 are used for introducing inert gas or nitrogen into the preheating chambers, so that the pressure of the preheating chambers can be kept consistent with the pressure of the unloading chamber or the process chamber, and the transportation of the laminated carrier 2 is facilitated. The air inlet systems of the first unloading cavity 41 and the second unloading cavity 42 are used for introducing inert gas or nitrogen into the unloading cavities, so that the pressure of the unloading cavities is increased to the normal pressure value. The first preheating chamber 31, the second preheating chamber 32, the first unloading chamber 41, the second unloading chamber 42 and each process chamber 6 are evacuated during operation. For this purpose, the first preheating chamber 31, the second preheating chamber 32, the first unloading chamber 41, the second unloading chamber 42 and each process chamber 6 are provided with a vacuum pumping system. The plate heater 8 comprises a mounting plate and an armored heating wire which is laid on the mounting plate in an S shape, wherein the armored heating wire comprises a metal protection pipe, a heating body which is sleeved in the metal protection pipe in an inner mode and an insulating layer which is arranged between the metal protection pipe and the heating body. The armored heating wire is formed by high-density compression, and has the advantages of pressure resistance, shock resistance, flexibility, energy conservation, high impermeability, radiation resistance, explosion resistance, safety, reliability, convenience in installation, high mechanical strength, long service life and the like.
In this embodiment, the stacked carrier 2 further includes a base 22 and an insulating support rod 23, the insulating support rod 23 is fixed on the base 22, the multiple layers of carrier pieces 21 are mounted on the insulating support rod 23, in each odd layer of carrier pieces 21 from top to bottom, two adjacent odd layers of carrier pieces 21 are connected through a first electrode block 24, in each even layer of carrier pieces 21 from top to bottom, two adjacent even layers of carrier pieces 21 are connected through a second electrode block (not shown in the drawings, blocked by the first electrode block 24 in fig. 2, and located below the second top layer electrode block 27 in fig. 3), the first layer of carrier pieces 21 are provided with a top layer electrode block 26, the second layer of carrier pieces 21 are provided with a second top layer electrode block 27, the top layer of electrode block 26 is provided with a first electrode insertion hole 261, and the second top layer of electrode block 27 is provided with a second electrode insertion hole 271. The odd-numbered layers of carrier pieces 21 are electrically connected through the first electrode block 24, and the even-numbered layers of carrier pieces 21 are electrically connected through the second electrode block. As long as the first electrode insertion hole 261 of the top electrode block 26 is connected with the positive electrode (or the negative electrode), the second electrode insertion hole 271 of the second top electrode block 27 is connected with the negative electrode (or the positive electrode), so that each odd-layer carrier piece 21 is connected with the positive electrode (or the negative electrode), each even-layer carrier piece 21 is connected with the negative electrode (or the positive electrode), that is, two adjacent carrier pieces 21 are connected with different electrodes to form a discharge circuit, the schematic electric field diagram is shown in fig. 4, the left side is the carrier pieces 21 of the odd-layer, and the right side is the carrier pieces 21 of the even-layer.
In this embodiment, the first layer carrier sheet 21 is provided with a avoiding groove 211 for avoiding the sub-top layer electrode block 27. The insulating support rod 23 comprises a ceramic support rod 231 and a plurality of ceramic isolation sleeves 232 sleeved on the ceramic support rod 231, the carrier pieces 21 are sleeved on the ceramic support rod 231, the two adjacent layers of carrier pieces 21 are separated by one ceramic isolation sleeve 232, and the two adjacent boat pieces 21 are separated by a fixed distance by the ceramic isolation sleeves 232.
In this embodiment, the laminated carrier 2 is exemplified by a laminated graphite boat, and the corresponding carrier sheet 21 is a graphite boat sheet. It should be noted that, in other embodiments, the material of the stacked carrier 2 may be replaced by other materials, such as: metal materials such as aluminum alloy, titanium alloy and steel or high-temperature-resistant low-activity nonmetal materials such as ceramic and quartz. Of course, two or more materials among these materials may be selected and combined for the material of the laminated carrier 2.
In the specific application example, the laminated carrier 2 is arranged in a structure of a plurality of layers and a plurality of rows according to the size of the space in the equipment cavity, and the carrier pieces 21 corresponding to the number of layers in each row are connected with each other. In the present embodiment, the stacked carrier 2 is preferably five rows, each row is composed of multiple carrier sheets 21, and each layer is only a single carrier sheet 21. The carrier pieces 21 of each row at the same layer interval are connected with the same electrode, the carrier piece is horizontally placed on each carrier piece 21, a discharge loop is formed between the adjacent upper and lower carrier pieces 21, the process gas is ionized by glow discharge, a required thin film structure and thickness are formed on the surface of the carrier piece, the coating uniformity of the structural form is good, no winding coating is generated, and the excellent rate is improved.
In this embodiment, an electrode assembly 7 is disposed outside the process chamber 6, the electrode assembly 7 includes a first electrode rod 71, a second electrode rod 72, and a vertically reciprocating cylinder 73, the vertically reciprocating cylinder 73 is disposed on a fixed seat 74 of the process chamber 6, the first electrode rod 71, the second electrode rods 72 are connected with the cylinder sliding blocks 731 of the vertically reciprocating cylinders 73, one end of each first electrode rod 71 is connected with a radio frequency power supply, the other end of each first electrode rod passes through the process cavity 6 to be connected with a first electrode jack 261 on the laminated carrier 2 in an inserting mode, one end of each second electrode rod 72 is connected with the radio frequency power supply, the other end of each second electrode rod passes through the process cavity 6 to be connected with a second electrode jack 271 on the laminated carrier 2 in an inserting mode, the first electrode rods 71 and the second electrode rods 72 are provided with corrugated pipes 75, the corrugated pipes 75 are sleeved on the first electrode rods 71 or the second electrode rods 72 and are connected with the process cavity 6 in an abutting mode, and one of the first electrode rods 71 and the second electrode rods 72 is a positive pole and. The vertically reciprocating electric cylinder 73 drives the first electrode rod 71 and the second electrode rod 72 to move downwards, and the first electrode jack 261 and the second electrode jack 271 corresponding to the stacked carrier 2 are inserted, the first electrode rod 71 is communicated with each odd layer carrier piece 21 of the stacked carrier 2, the second electrode rod 72 is communicated with each even layer carrier piece 21 of the stacked carrier 2, and the stacked carrier 2 forms a discharge loop.
In this embodiment, the air intake system of the process chamber 6 includes an air intake pipe 91, a shower 92 and a flow equalizing plate 93, the air intake pipe 91 is disposed on one side of the process chamber 6, the flow equalizing plate 93 is located in the process chamber 6, the shower 92 faces the flow equalizing plate 93, the air intake pipe 91 penetrates the process chamber 6 and is connected with the shower 92, the shower 92 is provided with a plurality of air injection holes (not shown in the figure), the flow equalizing plate 93 is provided with a plurality of flow equalizing holes (not shown in the figure), one side of the process chamber 6 away from the air intake pipe 91 is provided with an air exhaust pipe 94, and the air exhaust pipe 94. The arrangement of the spray pipe 19 is to ensure the process gas entering the cavity to be fully and uniformly mixed, the flow equalizing plate 93 is arranged to ensure that the gas field in the cavity is more uniform and stable, and the combination of the spray pipe 19 and the flow equalizing plate 93 greatly improves the uniformity and stability of the gas field, thereby being beneficial to improving the film coating quality of the silicon wafer.
The process flow of the PECVD equipment for preparing the heterojunction battery thin film is as follows:
(1) the laminated carriers 2 loaded with the slide glass are arranged on the material carrying plates 1, the material carrying plates 1 are conveyed to the first preheating cavity 31 by the conveying mechanism at the beginning of the process, and the material carrying plates 1 are conveyed to the first process cavity 6 by the conveying mechanism when the laminated carriers 2 and the slide glass reach the preset temperature.
(2) After the laminated carrier 2 is transmitted to the first process chamber 6, the required process gas is introduced, the positive electrode rod and the negative electrode rod (the first electrode rod 71 and the second electrode rod 72) are inserted, after the pressure is constant, the radio frequency power supply is started, the discharge time is set according to the thickness of the required film layer, and the first intrinsic amorphous silicon film coating on the front surface of the carrier is finished.
(3) The transmission mechanism transmits the laminated carrier 2 from the first process chamber 6 to the second process chamber 6, required process gas is introduced, the positive electrode rod and the negative electrode rod are inserted, after the pressure is constant, the radio frequency power supply is started, the discharge time is set according to the thickness of a required film layer, and the second layer of P-type doped amorphous silicon film coating is completed on the first layer of intrinsic amorphous silicon film on the front surface of the carrier.
(4) The transmission mechanism transmits the laminated carrier 2 from the second process chamber 6 to the first unloading chamber 41, nitrogen or other inert gases are introduced, the laminated carrier 2 is taken out from the chamber after the pressure of the first unloading chamber 41 is increased to normal pressure, and the slide glass with the front coated is taken out from the laminated carrier 2 at the discharging station 51 and turned over to the back in the slide turning area 5, and then the slide glass is placed in the laminated carrier 2 at the feeding station 52.
(5) The conveying mechanism conveys the laminated carrier 2 at the feeding station 52 to the second preheating chamber 32, and when the laminated carrier 2 and the carrier glass reach a preset temperature, the conveying mechanism conveys the laminated carrier 2 to the third process chamber 6.
(6) And (3) after the laminated carrier 2 is transmitted to the third process chamber 6, introducing required process gas, inserting the positive and negative electrode rods, starting a radio frequency power supply after the pressure is constant, setting the discharge time according to the thickness of a required film layer, and finishing the coating of the first intrinsic amorphous silicon film on the back surface of the carrier.
(7) The transmission mechanism transmits the laminated carrier 2 from the third process chamber 6 to the fourth process chamber 6, required process gas is introduced, the positive and negative electrode rods are inserted, after the pressure is constant, the radio frequency power supply is started, the discharge time is set according to the thickness of a required film layer, and the coating of a second N-type doped amorphous silicon film is completed on the first intrinsic amorphous silicon film on the back of the carrier.
(8) The transmission mechanism transmits the laminated carrier 2 from the fourth process chamber 6 to the second unloading chamber 42, nitrogen or other inert gases are introduced, and after the pressure of the second unloading chamber 42 rises to normal pressure, the laminated carrier 2 and the material carrying plate 1 are taken out from the second unloading chamber 42 and placed on a blanking platform.
The comparison of the existing plate-type PECVD equipment and the PECVD equipment for preparing the heterojunction battery film of the invention in the aspects of floor area, market price, slide quantity and the like under the condition of the same production energy is as follows:
Example 2
As shown in fig. 7, the PECVD apparatus for preparing a heterojunction cell thin film of this embodiment is different from that of embodiment 1 in that:
in this embodiment, the structure of the electrode assembly 7 is different from that of embodiment 1, the structure of the process chamber 6 is the same as that of embodiment 1, and the laminated carrier 2 is different from the laminated carrier 2 of embodiment 1.
In this embodiment, the electrode assembly 7 includes a positive electrode rod 76, one end of the positive electrode rod 76 is connected to the positive electrode of the rf power supply, the other end is connected to the current equalizing plate 93, and the cavity of the process chamber 6 is grounded as the negative electrode of the power supply. The outer shell of the cavity is grounded as the negative electrode of a power supply, the flow equalizing plate 93 is connected with the positive electrode of a radio frequency power supply, an electric field is formed in the area of the air inlet and the flow equalizing plate 93, and after the gas is ionized in the area of the air inlet, the gas moves to the air extraction opening and deposits a film on a slide glass on the laminated carrier plate 2.
In the embodiment, the laminated carrier 2 includes a plurality of carrier sheets 21, and the adjacent two carrier sheets 21 do not need to be connected through an electrode block.
The rest is basically the same as embodiment 1, and the description is omitted here.
Example 3
As shown in fig. 8, the PECVD apparatus for preparing a heterojunction cell thin film of this embodiment is different from that of embodiment 1 in that:
in this embodiment, the structure of the electrode assembly 7 is different from that of embodiment 1, the structure of the process chamber 6 is the same as that of embodiment 1, and the laminated carrier 2 is different from the laminated carrier 2 of embodiment 1.
In this embodiment, the stacked carrier 2 further includes a base 22 and an insulating support rod 23, the insulating support rod 23 is fixed on the base 22, the multiple layers of carrier sheets 21 are mounted on the insulating support rod 23, two adjacent layers of carrier sheets 21 are connected by the electrode block 28, the first layer of carrier sheet 21 is provided with a top layer electrode block 26, and the top layer electrode block 26 is provided with an electrode insertion hole 262. That is, the laminated carrier 2 is not divided into odd and even layers, and two adjacent carrier sheets 21 are conducted through the electrode block 28 from top to bottom, and all the carrier sheets 21 in the layers are conducted to form a whole. Only one electrode is communicated with the electrode inserting hole 262 of the top layer electrode block 26, and all the layer carrier pieces 21 are the same electrode.
Correspondingly, an electrode assembly 7 needs to be improved, the electrode assembly 7 includes a positive electrode rod 76 and a vertically reciprocating electric cylinder 73, the vertically reciprocating electric cylinder 73 is disposed on a fixed seat 74 of the process chamber 6, the positive electrode rod 76 is connected with an electric cylinder slide 731 of the vertically reciprocating electric cylinder 73, one end of the positive electrode rod 76 is connected with a radio frequency power supply, the other end of the positive electrode rod 76 passes through the process chamber 6 and is inserted into an electrode insertion hole 262 on the laminated carrier 2, the positive electrode rod 76 is provided with a corrugated tube 75, the corrugated tube 75 is sleeved on the positive electrode rod 76 and is abutted against the process chamber 6, and the chamber body of the process chamber 6 is grounded to serve as a negative. The outer shell of the cavity is grounded as the cathode of a power supply, all the carrier pieces 21 are connected with the anode of a radio frequency power supply, an electric field is formed between the laminated carrier 2 and the cavity wall, and a film is deposited on a slide glass of the laminated carrier pieces 21 after gas ionization.
The rest is basically the same as embodiment 1, and the description is omitted here.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (10)
1. A PECVD equipment for preparing heterojunction battery thin films is characterized in that: including carrying flitch (1), stromatolite formula carrier (2) and the first preheating chamber (31), first process chamber group, first unloading chamber (41), turn over piece district (5), second preheating chamber (32), second process chamber group and the second unloading chamber (42) of butt joint in proper order, first process chamber group is including at least two process chamber (6) of butt joint in proper order, second process chamber group is equipped with the transmission device who is used for transmitting flitch (1) in each cavity including at least two process chamber (6) of butt joint in proper order, stromatolite formula carrier (2) are located on flitch (1), stromatolite formula carrier (2) is including multilayer carrier piece (21), be equipped with ejection of compact station (51) and feeding station (52) in turn over piece district (5), ejection of compact station (51) and feeding station (52) all are equipped with transmission device, be equipped with the year formula carrier (2) of carrying on ejection of compact station (51) between ejection of compact station (51) and feeding station (52) The piece taking and placing overturning device is used for taking out the piece and overturning the piece for 180 degrees and then placing the piece on the laminated carrier (2) of the feeding station (52).
2. The PECVD apparatus for preparing a heterojunction cell thin film according to claim 1, wherein: laminated carrier (2) still includes base (22) and insulating support pole (23), insulating support pole (23) are fixed on base (22), multilayer carrier piece (21) are installed on insulating support pole (23), from last each odd number layer carrier piece (21) down, connect through first electrode piece (24) between two adjacent odd number layer carrier pieces (21), from last each even number layer carrier piece (21) down, connect through the second electrode piece between two adjacent even number layer carrier pieces (21), be equipped with top layer electrode piece (26) on first layer carrier piece (21), be equipped with second top layer electrode piece (27) on second layer carrier piece (21), be equipped with first electrode jack (261) on top layer electrode piece (26), second top layer electrode piece (27) are equipped with second electrode jack (271).
3. The PECVD apparatus for preparing a heterojunction cell thin film according to claim 2, wherein: the first layer of carrier sheet (21) is provided with an avoidance groove (211) for avoiding the secondary top layer electrode block (27); insulating bracing piece (23) include ceramic bracing piece (231) and cover a plurality of pottery spacer bushes (232) on ceramic bracing piece (231), carrier piece (21) cover is on ceramic bracing piece (231), and adjacent two-layer carrier piece (21) separate through a pottery spacer bush (232).
4. The PECVD apparatus for preparing a heterojunction cell thin film according to claim 2, wherein: the laminated carrier (2) comprises a plurality of layers and a plurality of rows of carrier sheets (21), and the carrier sheets (21) corresponding to the middle layers of the rows are mutually connected; the laminated carrier (2) is made of at least one of graphite, aluminum alloy, titanium alloy, steel, ceramic and quartz.
5. PECVD apparatus for preparing heterojunction cell thin films as in any of claims 2 to 4, wherein: the outer side of the process cavity (6) is provided with an electrode assembly (7), the electrode assembly (7) comprises a first electrode rod (71), a second electrode rod (72) and a vertical reciprocating electric cylinder (73), the vertical reciprocating electric cylinder (73) is arranged on a fixed seat (74) of the process cavity (6), the first electrode rod (71) and the second electrode rod (72) are connected with an electric cylinder sliding block (731) of the vertical reciprocating electric cylinder (73), one end of the first electrode rod (71) is connected with a radio frequency power supply, the other end of the first electrode rod (71) penetrates through the process cavity (6) and is inserted into a first electrode jack (261) on the laminated carrier (2), one end of the second electrode rod (72) is connected with the radio frequency power supply, the other end of the second electrode rod (72) penetrates through the process cavity (6) and is inserted into a second electrode jack (271) on the laminated carrier (2), and corrugated pipes (75) are respectively arranged on the first electrode rod (71) and the second electrode rod (72), the corrugated pipe (75) is sleeved on the first electrode rod (71) or the second electrode rod (72) and is abutted against the process cavity (6), and one of the first electrode rod (71) and the second electrode rod (72) is a positive electrode and the other is a negative electrode.
6. PECVD apparatus for preparing heterojunction cell thin films as in any of claims 1 to 4, wherein: the device comprises a first preheating cavity (31), a first process cavity group, a first unloading cavity (41), a sheet turning area (5), a second preheating cavity (32), a second process cavity group and a second unloading cavity (42), wherein the sheet turning area (5), the second preheating cavity, the second process cavity group and the second unloading cavity (42) are distributed in a U-shaped structure, the sheet turning area (5) is located at the bottom of the U-shaped structure, plate heaters (8) are arranged in the first preheating cavity (31), the second preheating cavity (32) and each process cavity (6), the first unloading cavity (41) and the second unloading cavity (42) are respectively provided with an air inlet system, and each process cavity (6) is respectively provided with an air inlet system.
7. PECVD apparatus for preparing heterojunction cell thin films as in claim 6 wherein: the air intake system of process chamber (6) includes intake pipe (91), shower (92) and flow equalizing plate (93), one side of process chamber (6) is located in intake pipe (91), flow equalizing plate (93) are located process chamber (6), shower (92) are towards flow equalizing plate (93), intake pipe (91) pass process chamber (6) and are connected with shower (92), shower (92) are equipped with a plurality of fumaroles, be equipped with a plurality of flow equalizing holes on flow equalizing plate (93), one side that intake pipe (91) were kept away from in process chamber (6) is equipped with exhaust tube (94), exhaust tube (94) even have a vacuum pumping system.
8. PECVD apparatus for preparing heterojunction cell thin films as in claim 7 wherein: an electrode assembly (7) is arranged on the outer side of the process cavity (6), the electrode assembly (7) comprises an anode rod (76), one end of the anode rod (76) is connected with the anode of a radio frequency power supply, the other end of the anode rod is connected with the flow equalizing plate (93), and the cavity of the process cavity (6) is grounded and serves as the cathode of the power supply.
9. The PECVD apparatus for preparing a heterojunction cell thin film according to claim 1, wherein: laminated carrier (2) still includes base (22) and insulating support pole (23), insulating support pole (23) are fixed on base (22), multilayer carrier piece (21) are installed on insulating support pole (23), connect through electrode block (28) between adjacent two-layer carrier piece (21), are equipped with top layer electrode block (26) on first layer carrier piece (21), be equipped with electrode jack (262) on top layer electrode block (26).
10. The PECVD apparatus for preparing a heterojunction cell thin film of claim 9, wherein: the technical scheme is that an electrode assembly (7) is arranged on the outer side of the technical cavity (6), the electrode assembly (7) comprises an anode rod (76) and a vertical reciprocating electric cylinder (73), the vertical reciprocating electric cylinder (73) is arranged on a fixing seat (74) of the technical cavity (6), the anode rod (76) is connected with an electric cylinder sliding block (731) of the vertical reciprocating electric cylinder (73), one end of the anode rod (76) is connected with a radio frequency power supply, the other end of the anode rod passes through the technical cavity (6) to be inserted into an electrode jack (262) on the laminated carrier (2), the anode rod (76) is provided with a corrugated pipe (75), the corrugated pipe (75) is sleeved on the anode rod (76) and abutted against the technical cavity (6), and the cavity of the technical cavity (6) is grounded to serve as a power supply cathode.
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Cited By (1)
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|---|---|---|---|---|
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Application publication date: 20200508 |