CN219470193U - Box-type expandable stack PECVD system - Google Patents

Box-type expandable stack PECVD system Download PDF

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Publication number
CN219470193U
CN219470193U CN202320308921.9U CN202320308921U CN219470193U CN 219470193 U CN219470193 U CN 219470193U CN 202320308921 U CN202320308921 U CN 202320308921U CN 219470193 U CN219470193 U CN 219470193U
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reaction
cavity
electrode
stack
reaction cavity
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杨与胜
曲永鹏
曾清华
程序
黄发明
林海奕
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Goldstone Fujian Energy Co Ltd
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Goldstone Fujian Energy Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The utility model relates to a box-type expandable stack PECVD system which comprises a reaction cavity, an air supply assembly for supplying air to the reaction cavity, a vacuum pump set for sucking air in the reaction cavity, a plurality of stack reaction bearing assemblies which can be transversely arranged and/or longitudinally arranged in the reaction cavity, and heating assemblies which are arranged in the reaction cavity and distributed beside the stack reaction bearing assemblies. The utility model aims to provide a box-type expandable stack PECVD system which has high coating uniformity, small equipment occupation area and high productivity and can greatly reduce equipment cost.

Description

Box-type expandable stack PECVD system
Technical Field
The utility model relates to a box-type expandable stack PECVD system.
Background
The heterojunction solar cell preparation process has the advantages of simple steps, low process temperature, high power generation quantity, high stability, no attenuation and low cost, and along with the continuous technological progress and policy promotion of the industry, the heterojunction solar cell has the advantages of cost performance and the like, and is possible to replace a crystalline silicon solar cell to become a next generation mainstream photovoltaic cell.
Currently, one of the main challenges faced in heterojunction solar cell industrialization is that the equipment cost is high, the one-time investment is large, and particularly, the PECVD equipment for amorphous silicon or microcrystalline silicon coating in the core process accounts for more than 50% of the total equipment cost. Currently, PECVD equipment for heterojunction preparation adopts a flat plate type coating structure, namely a certain number of silicon wafers are tiled on a carrier plate and are transferred into a vacuum cavity for coating. With the demand of large capacity of large silicon wafer in the market, a single tiling mode of silicon wafer is adopted to carry out PECVD film plating, and a very large cavity area is required, so that various problems are brought to equipment and process, such as film plating uniformity problems, electrode plate design, gas distribution box design, power supply selection and heating uniformity problems and the like. In addition, in order to promote productivity, flat PECVD equipment can reduce the technology beat through the mode that a plurality of cavitys are established ties, leads to the area of equipment big, and the PECVD equipment length of a 500MW production line often needs hundred meters, brings more problems and difficulty for factory building construction and equipment operation and maintenance. The tubular PECVD equipment has higher single-batch productivity, but because the tubular PECVD equipment generally uses a low-frequency power supply, a high-frequency or very-high-frequency power supply cannot be adopted, and the silicon wafer is damaged during film coating; and the tubular PECVD airflow enters from one end of the quartz tube, so that the process gas is unevenly distributed; the heterojunction battery has very high quality requirements on an intrinsic passivation layer (I layer) and a doped semiconductor layer (N layer/P layer), and the tubular PECVD equipment generally cannot meet the coating requirements of the heterojunction solar battery.
Disclosure of Invention
The utility model aims to provide a box-type expandable stack PECVD system which has high coating uniformity, small equipment occupation area and high productivity and can greatly reduce equipment cost.
The aim of the utility model is realized by the following technical scheme:
a box-type expandable stack PECVD system comprises a reaction cavity, an air supply assembly for supplying air to the reaction cavity, a vacuum pump set for sucking air in the reaction cavity, a plurality of stack reaction bearing assemblies which can be transversely arranged and/or longitudinally arranged in the reaction cavity, and heating assemblies which are arranged in the reaction cavity and distributed beside the stack reaction bearing assemblies.
Compared with the prior art, the utility model has the advantages that:
(1) The stacking type reaction bearing assembly has the advantages that the number of the single assemblies can bear silicon wafers or substrates is large, and the stacking type reaction bearing assembly is transversely arranged and/or longitudinally stacked in the reaction cavity, so that the number of the silicon wafers or the substrates can be greatly increased, the productivity of PECVD equipment is greatly improved, the occupied area is small, and the equipment cost can be greatly reduced;
(2) In the stack reaction bearing component, the electrode and the single silicon wafer or the substrate form an independent coating unit, the independent coating unit has small area, high electric field uniformity, large process window and good coating uniformity, and is beneficial to improving the conversion efficiency of the heterojunction battery;
(3) Each group of electrodes of the stack type reaction bearing assembly are independently driven and controlled, so that the problems of multi-piece grid-connected radio frequency crosstalk, nonuniform plasma starting, glow jump or non-starting of individual areas are avoided, the circuit control difficulty is low, the selectable range of core components such as a power supply is wide, and standing wave effects and the like are avoided due to the problem of overlarge electrode area;
(4) The PECVD equipment of the stack type reaction bearing component is particularly suitable for the application of the high-efficiency microcrystalline heterojunction battery with the characteristics of the current high-power density process, the electrode areas of the coating areas are small and are respectively and independently controlled, and the difficulties of equipment design, manufacturing and the like caused by the need of using a very large power source are avoided;
(5) The PECVD equipment formed by the stack type reaction bearing component is simple and convenient to maintain.
Drawings
FIG. 1 is a schematic diagram of an embodiment of the present utility model.
Fig. 2 is a schematic diagram of another view of fig. 1.
Fig. 3 is a top view of fig. 1.
FIG. 4 is a schematic diagram of an embodiment of a stacked reaction carrier assembly.
Fig. 5a is a partial schematic view of the structure of fig. 4.
FIG. 5b is a schematic view of a portion of the stacked reaction carrier assembly mated with a heating assembly.
FIG. 5c is a schematic diagram of an embodiment of a self-contained coating unit.
Fig. 6 is a side view of fig. 5 c.
Fig. 7 is a front view of fig. 5 c.
Fig. 8 is a top view of fig. 5 c.
FIG. 9 is a schematic perspective view of a stacked reaction carrier assembly comprising a plurality of independent coating units.
FIG. 10 is a schematic structural view of a stacked reaction carrier assembly composed of a plurality of independent coating units.
FIG. 11 is a schematic diagram of the internal structure of a plurality of stacked reaction carrier components in a lateral expansion mode.
FIG. 12 is a side view of a reaction chamber mated with a stacked reaction carrier assembly.
FIG. 13 is a schematic view of the internal structure of a plurality of stacked reaction carrier components with longitudinal expansion.
FIG. 14 is a side view of a stacked reaction carrier assembly mated with a reaction chamber when longitudinally expanded.
FIG. 15 is a schematic view of the internal structure of a plurality of stacked reaction carrier components with lateral and longitudinal expansion.
FIG. 16 is a schematic view showing a partial operation state of the reaction chamber when PECVD operation is performed.
Figure 17 is a schematic view of the structure of one embodiment of a gas shield for a movable chamber door.
Fig. 18 is a schematic diagram of the structure of an embodiment of the present utility model.
Fig. 19 is a schematic view of another view of fig. 18.
Fig. 20 is a top view of fig. 18.
FIG. 21 is a schematic diagram of an embodiment of a self-contained plating cell.
Fig. 22 is an exploded view of fig. 21.
FIG. 23 is a schematic diagram of an embodiment of a stacked reaction carrier assembly.
FIG. 24 is a schematic structural view of a stacked reaction carrier assembly composed of a plurality of independent coating units.
FIG. 25 is a schematic view of the internal structure of a plurality of stacked reaction carrier elements in lateral expansion.
FIG. 26 is a side view of a reaction chamber mated with a stacked reaction carrier assembly.
FIG. 27 is a schematic view of the internal structure of a plurality of stacked reaction carrier components with lateral and longitudinal expansion.
FIG. 28 is a side view of a stacked reaction carrier assembly mated with a reaction chamber when expanded laterally and longitudinally.
FIG. 29 is a schematic view showing a partial operation state of the reaction chamber when PECVD operation is performed.
Fig. 30 is a schematic diagram of the structure of an embodiment of the present utility model.
Fig. 31 is a schematic view of another view of fig. 30.
Fig. 32 is a top view of fig. 31.
Description of the reference numerals: 11. the plasma generating device comprises a first electrode, 12, a second electrode, 13, a silicon wafer, 14, an insulating support column, 15, an electrode connecting end, 21, a stacked reaction bearing component, 22, a heating plate, 23, a reaction cavity, 24, a special gas pipeline, 25, a movable cavity door, 26, an air exhaust pipeline, 27, a glow plasma region, 28, a reaction unit, 29, a fixed seat component, 30, a base, 31, a special gas holder, 32, an electric cabinet, 33, a vacuum pump group, 34, a spray header, 35, a spoiler A,36, a spoiler B,37 and a plasma generating electrode.
Detailed Description
A box-type expandable stack PECVD system comprises a reaction cavity, an air supply assembly for supplying air to the reaction cavity, a vacuum pump set for sucking air in the reaction cavity, a plurality of stack reaction bearing assemblies which can be transversely arranged and/or longitudinally arranged in the reaction cavity, and heating assemblies which are arranged in the reaction cavity and distributed beside the stack reaction bearing assemblies.
The reaction cavity is of a vertical structure and comprises a vertical reaction cavity shell forming a cavity and a cavity door which is matched with the vertical reaction cavity shell to open and close the cavity, and the stack type reaction bearing assembly is vertically arranged in the cavity of the reaction cavity shell; or the reaction cavity is of a horizontal structure, and comprises a horizontal reaction cavity shell forming a cavity and a cavity door matched with the horizontal reaction cavity shell to open and close the cavity, and the stack reaction bearing assembly is horizontally arranged in the cavity of the reaction cavity shell.
The air supply assembly comprises an air supply pipeline connected with the reaction cavity through an air supply port and an air supply cabinet connected with an air inlet of the air supply pipeline.
The vacuum pump set comprises an air extraction pipeline with an air extraction opening connected with the reaction cavity and vacuum pump equipment connected with an air outlet of the air extraction pipeline.
The stack type reaction bearing component mainly comprises more than one first electrode and more than one second electrode with the polarity opposite to that of the first electrode; adjacent first electrodes and second electrodes are arranged at intervals, the plate surfaces of the adjacent first electrodes and second electrodes are opposite to each other to form a coating interval, and the plate surfaces of the first electrodes and/or the second electrodes in the coating interval are used for bearing a substrate; the reaction cavity is provided with an air inlet structure and an air outlet structure which are mutually matched to enable air to flow through a coating interval, the air inlet structure is connected with an air supply assembly, and the air outlet structure is connected with a vacuum pump set.
The first electrode and the second electrode are of a polar plate type structure, and are provided with protruding parts serving as electrode connecting ends.
The stacked reaction bearing assembly comprises a plurality of spliced coating units which are correspondingly spliced, wherein each spliced coating unit comprises more than one first electrode, more than one second electrode and an insulating support column for fixing the first electrode and the second electrode at intervals; or, the stack reaction bearing component comprises an end coating unit and more than one splicing coating unit correspondingly connected with the end coating unit, the end coating unit comprises more than one end first electrode, more than one end second electrode and end insulation support columns for fixing the end first electrodes and the end second electrodes at intervals, and the splicing coating unit comprises more than one splicing first electrode, more than one splicing second electrode and splicing insulation support columns for fixing the splicing first electrodes and the splicing second electrodes at intervals and enabling one ends of the splicing insulation support columns to extend out to form cantilevers for butt joint with the end coating units or adjacent splicing coating units.
The air inlet structure comprises more than one spoiler for separating the space between the inner cavity wall and the outer cavity wall of the reaction cavity to form more than two uniform air cavities; the spoiler and the inner cavity wall of the reaction cavity are sequentially arranged from outside to inside, and air homogenizing holes are formed from sparse to dense; the outer cavity wall of the reaction cavity is provided with an air inlet connected with an air supply assembly.
The air homogenizing holes on the inner cavity wall of the reaction cavity adopt a spray type structure.
1. The stack type reaction bearing component is provided with a plurality of independent coating units, each coating unit is independently controlled in a partitioned mode, and the independent coating units can be arranged in a free transverse or longitudinal array mode, so that the single machine productivity is greatly improved.
2. The stacked reaction bearing assembly can be transversely expanded, longitudinally expanded or bidirectionally expanded to a plurality of groups of transversely arranged and/or longitudinally stacked, and the stacked reaction bearing assembly is arranged in the reaction cavity in a multi-layer manner so as to bear more silicon wafers or substrates.
3. The independent coating unit is composed of a first electrode and a second electrode with opposite polarities, and an independent coating area is formed; the first electrode and the second electrode are insulated and fixed by an insulating support column; the material of the insulating support column can be any one of ceramics, quartz or PEEK.
4. The surface of the electrode of the stack reaction bearing component can be provided with a silicon wafer or a substrate used for coating; each radio frequency access electrode is independently driven and controlled, a matcher and a radio frequency power supply are arranged, and the capacitance value of the electrode plate is matched with the frequency section of the radio frequency power supply.
5. The stack type reaction bearing component is extensible, the electrode non-parallel structure is independently controlled, the limit of the number of coating films in the stack type reaction bearing component is small, and different designs can be realized according to the productivity requirement, and the number of the coating films can be from 2 to 100.
6. The stack reaction bearing component can be fixed in the cavity, can be easily assembled and disassembled and is flexible to use.
7. The coating heating design is on both sides of the reaction box, the temperature is easy to control, the heat conduction is quick, and no extra preheating cavity or external preheating is needed. The heating plate may be a resistance wire heating structure and/or an infrared heating structure.
8. Each film-coated electrode can be independently controlled by a power supply, the process flexibility is high, the distance between each electrode is 15-50mm, and the application requirements of different film structures can be ensured.
9. The area of the grounding terminal electrode is larger than that of the radio frequency access terminal electrode, so that crosstalk between two adjacent electrodes is prevented, plasma crosstalk jumping is generated, and unstable coating is caused.
10. The special gas supply uniformity is good, each silicon wafer film coating area is provided with a corresponding gas inlet and gas exhaust loop, and the gas inlet adopts a multi-layer gas homogenizing structure, so that the gas uniformly balances to pass through the film coating area, and the film coating uniformity and the high doping efficiency are ensured.
11. The electrode size of the stacked reaction bearing component can be designed according to the common silicon wafer size in the market, the electrode size can be 220 x 120mm or 190 x 190mm or 220 x 220mm or 240 x 240mm, and the corresponding silicon wafer placement size is 210 half pieces/182 mm/210mm/230mm and the like.
12. The PECVD apparatus uses RF or VHF power as the excitation power source.
13. The vacuum cavity is made of aluminum materials, so that pollution is avoided.
14. The vacuum cavity and the stack reaction bearing component can be cleaned and maintained by RPS and NF3, and the self-cleaning function is realized.
A box-type expandable stack PECVD system comprises a reaction cavity 23 with a movable cavity door 25, a special gas cabinet 31 for supplying gas to the reaction cavity 23 through a special gas pipeline 24, a vacuum pump set 33 for sucking gas in the reaction cavity 23 through a gas suction pipeline 26, a plurality of stack type reaction bearing components 21 which are arranged in the reaction cavity 23 through a fixed seat component 29 and can be transversely arranged and/or longitudinally arranged, heating components distributed beside the stack type reaction bearing components 21 and an electric cabinet 32 for providing electric power support for electric equipment.
Example 1
As shown in fig. 1 to 3, the reaction cavity of the PECVD equipment is vertically arranged, the silicon wafer in the stacked reaction bearing assembly is horizontally arranged on the electrode plate, and the stacked reaction bearing assembly can be independently and parallelly arranged in the reaction cavity and can be expanded to a multi-layer arrangement; the movable cavity door horizontally moves to the opening of the reaction cavity, forms a closed space with the reaction cavity, and is pumped by the vacuum pump set to meet the requirement of vacuum conditions; the heating component comprises heating plates 22 arranged at the left side and the right side of the stacked reaction bearing component, the coating temperature can be maintained within a set requirement range, and the heating plates can select resistance wire heating structures and/or infrared heating structures; in the process, the movable cavity door is provided with a gas distribution cover with a multi-layer gas distribution structure, and special gas enters the stack reaction bearing assembly from uniformly distributed gas distribution holes, so that the gas uniformly balances to pass through a coating area, and the uniformity of coating and high doping efficiency are ensured. The inner wall of the reaction cavity is made of aluminum materials, so that pollution is avoided.
As shown in fig. 4 and 5a, the stacked reaction-bearing assembly includes first electrodes 11 and second electrodes 12 alternately arranged at intervals, and the first electrodes and the second electrodes are insulated and fixed by insulating support columns 14; the material of the insulating support column 14 can be any one of ceramics, quartz or PEEK; the convex part on the electrode is an electrode connecting end; the first electrode 11 is grounded, the second electrode 12 is connected with a power matcher and an excitation power supply, and the excitation power supply can be an RF or VHF power supply; a silicon wafer 13 is placed on the second electrode 12.
As shown in fig. 5c and fig. 6 to 8, the stacked reaction carrier assembly includes a plurality of stacked independent coating units. The independent coating unit comprises a first electrode 11 and a second electrode 12 with opposite polarities, and a silicon wafer 13 is arranged on the second electrode 12 and matched with the first electrode 11 to form an independent coating area; the first electrode 11 has a larger external dimension than the second electrode 12. In a preferred scheme, as shown in fig. 9, the independent coating unit comprises more than two first electrodes 11 and second electrodes 12 arranged between two adjacent first electrodes 11 and opposite to the first electrodes 11 in polarity, one surface of the electrode positioned at the outermost side, which is close to the inner side, can respectively bear a piece of silicon wafer 13, and the upper side and the lower side of the other first electrodes 11 and the upper side and the lower side of the second electrodes 12 can be used for bearing the silicon wafer 13; each independent film plating unit can bear more than 4 silicon wafers; each radio frequency access electrode (such as the second electrode 12 in the figure) is independently driven and controlled, and is provided with a matcher and a radio frequency power supply, and the capacitance value of the electrode plate is matched with the frequency range of the radio frequency power supply. The electrode spacing born by the stacked reaction bearing component can be designed according to the process requirement, the electrode spacing is generally 15-50mm, the typical value is about 30mm, and the stacked reaction bearing component can be suitable for the i/n/p coating requirement of a heterojunction battery. The electrode size of the stack type reaction bearing component can be designed according to the size of a silicon wafer commonly used in the market; the electrode size of the stacked reaction bearing component can be 220 x 120mm or 190 x 190mm or 220 x 220mm or 240 x 240mm, and the corresponding silicon wafer placement size is 210 half-wafer/182 mm/210mm/230mm, etc. As shown in FIG. 5b, heating plates are arranged on two sides of the independent coating area to maintain the independent coating area, particularly the silicon wafer, within a set temperature range and ensure the coating quality.
As shown in fig. 10, the stacked reaction carrier assembly 21 is formed by arranging a plurality of independent coating units in a longitudinal array, the number of the loadable silicon wafers or substrates can be designed to be different according to the capacity requirement, and the number of the loadable silicon wafers or substrates can be 2-100 per independent coating unit.
As shown in fig. 11 and 12, the stacked reaction carrier assembly can be laterally spread and arranged for carrying a plurality of silicon wafers or substrates, and the stacked reaction carrier assembly can be fixed in the reaction cavity by welding or locking, or can be connected by arranging an electrode plug seat on the inner wall of the reaction cavity to be matched with the electrode connection end in a plug-in connection manner. For example, a single stacked reaction carrier assembly may carry 50 wafers and by extending laterally to M columns, e.g., 10 columns, a stacked reaction carrier assembly may carry 500 wafers.
As shown in fig. 13 and 14, the stacked type reaction carrier assembly can be longitudinally stacked by more than two, for carrying a plurality of silicon wafers or substrates. For example, a single stacked reaction carrier component can carry 40 silicon wafers, the number of stacked reaction carrier components is fixed to be 6 columns, and the stacked reaction carrier component can carry 720 silicon wafers by extending to 3 layers longitudinally.
As shown in fig. 15, the stacked, stacked reaction carrier assembly is capable of bi-directional expansion for carrying multiple electrodes and substrates. For example, if a single stacked reaction bearing component can bear 30 silicon wafers, the number of columns of the stacked reaction bearing component is transversely expanded to 10 columns, and longitudinally expanded to 4 layers, the stacked reaction bearing component can bear 1200 silicon wafers;
referring to fig. 16, after being subjected to pre-process texturing and cleaning, a silicon wafer 13 for a heterojunction solar cell is transferred into the stacked reaction bearing assembly 21, the stacked reaction bearing assembly 21 is transferred into a reaction cavity 23 through an automatic structure, a movable cavity door 25 forms a sealed reaction cavity after moving the sealed reaction cavity 23, the reaction cavity 23 is vacuumized to about 1.5Pa, and meanwhile, heating plates 22 on two sides heat the stacked reaction bearing assembly 21 and the silicon wafer 13 placed on the stacked reaction bearing assembly to 150-200Due to the small size of the electrodes and the silicon wafer, the silicon wafer 13 can be quickly heated to a preset temperature through the heating plates 22 on the two sides; siH is fed from the off-gas line 24 4 、H 2 、PH 3 、B 2 H 6 And CO 2 The mixed gases form a glow plasma region 27 in the electrode space for depositing the intrinsic amorphous silicon layer and doping the amorphous or microcrystalline silicon layer, and the redundant gases and reaction products are pumped to an exhaust gas treatment system through a pumping pipeline 26; as shown in fig. 17, the extra gas enters the gas distribution cover on the movable cavity door through the extra gas pipeline; the gas distribution cover is provided with a multilayer gas distribution structure, the multilayer gas distribution structure is sequentially provided with a spoiler B36, a spoiler A35 and a spray header 34 according to the sequence direction from a special gas inlet to a cavity, wherein the number of gas inlets on the spoiler A35 is 4 times that of the spoiler B36, and the number of gas inlets on the spray header 34 is 4 times that of the spoiler A35, so that the special gas passes through the spoiler B36 and the spoiler A35 before and after, and then passes through the spray header 34 to enter the reaction cavity, the gas is uniformly balanced to pass through a film coating area, and the uniformity and high doping efficiency of film coating are ensured.
In order to avoid cross-contamination effects, the stacked reaction carrier assembly may be transferred to a reaction chamber that is vented with different gases. For depositing i layer, introducing SiH into the special gas inlet 4 And H 2 The air pressure of the mixed gas is 30-150Pa, and the thickness of the coating is 5-10nm; for depositing n layers, introducing SiH into the special gas inlet 4 、H 2 、PH 3 And CO 2 The mixed gas can control the air pressure to be 30-150Pa for depositing an amorphous n layer, the thickness of a coating film to be 4-7nm, and control the air pressure to be 150-500Pa for depositing a microcrystalline n layer, and the thickness of the coating film to be 7-20nm; for depositing p layer, introducing SiH into the special gas inlet 4 、H 2 、B 2 H 6 And CO 2 The mixed gas can control the air pressure to be 30-150Pa to deposit an amorphous p layer, the thickness of a coating film is 7-12nm, the air pressure to be 150-500Pa to deposit a microcrystalline p layer, and the thickness of the coating film is 10-30nm; design adjustment can also be carried out according to the process requirement.
Example 2
As shown in fig. 18 to 20, the reaction cavity of the PECVD apparatus is vertically arranged, the silicon wafer in the stacked reaction bearing assembly is vertically placed on the surface of the electrode plate in the stacked reaction bearing assembly, and the stacked reaction bearing assembly can be independently and parallelly arranged in the reaction cavity and can be expanded to a multi-layer arrangement; the movable cavity door horizontally moves to the opening of the reaction cavity, forms a closed space with the reaction cavity, and is pumped by the vacuum pump set to meet the requirement of vacuum conditions; the heating component comprises heating plates 22 arranged on the upper side and the lower side of the stacked reaction bearing component, the coating temperature can be maintained within a set requirement range, and the heating plates can be provided with resistance wire heating structures and/or infrared heating structures; in the process, a gas distribution cover with a multi-layer gas distribution structure is arranged on the movable cavity door, and special gas enters the stack reaction bearing assembly from uniformly distributed gas distribution holes, so that the gas uniformly balances to pass through a coating area, and the uniformity of coating and high doping efficiency are ensured;
as shown in fig. 21 and 22, the stacked reaction carrier assembly includes a plurality of independent coating units arranged transversely, each independent coating unit includes a first electrode 11 and a second electrode 12 with opposite polarities, a silicon wafer 13 is placed on the second electrode 12 and cooperates with the first electrode 11 to form an independent coating area, and the first electrode and the second electrode are insulated and fixed by an insulating support column 14; the material of the insulating support column 14 can be any one of ceramics, quartz or PEEK; the convex part on the electrode is an electrode connecting end; the first electrode 11 is grounded, the second electrode 12 is connected with a power matcher and an excitation power supply, and the excitation power supply can be an RF or VHF power supply; the first electrode 11 has a larger external dimension than the second electrode 12; one side of the outermost electrode close to the inner side can respectively bear a silicon wafer 13, and two sides of the other electrode plates can be used for bearing the silicon wafer 13; as shown in fig. 2.4, each independent coating unit can bear 4 silicon wafers; each radio frequency access electrode is independently driven and controlled, a matcher and a radio frequency power supply are arranged, and the capacitance value of the electrode plate is matched with the frequency section of the radio frequency power supply. The electrode spacing born by the stacked reaction bearing component can be designed according to the process requirement, the electrode spacing is generally 15-50mm, the typical value is about 30mm, and the stacked reaction bearing component can be suitable for the i/n/p coating requirement of a heterojunction battery. The electrode size of the stack type reaction bearing component can be designed according to the size of a silicon wafer commonly used in the market; the electrode size of the stacked reaction bearing component can be 220 x 120mm or 190 x 190mm or 220 x 220mm or 240 x 240mm, and the corresponding silicon wafer placement size is 210 half-wafer/182 mm/210mm/230mm, etc.
As shown in fig. 23 and 24, the stacked reaction carrier assembly 21 is formed by arranging a plurality of independent coating units in a transverse array, the number of loadable silicon wafers or substrates can be designed to be different according to the capacity requirement, and the number of the loadable silicon wafers can be 2-100 per stacked reaction carrier assembly.
As shown in fig. 25 and 26, the stacked reaction carrier assembly is capable of being laterally expanded for carrying a plurality of electrodes and substrates. If the number of the silicon wafers can be carried by a single stacked reaction carrying component is 50, the stacked reaction carrying component can carry 500 silicon wafers by transversely arranging and expanding the silicon wafers to M rows, such as 10 rows.
As shown in fig. 27 and 28, the stacked reaction carrier assembly is capable of bi-directional expansion for carrying a plurality of electrodes and substrates. If the number of the silicon wafers can be carried by a single stacked reaction carrying component is 30, the number of the stacked reaction carrying component columns is expanded to 10 columns through transverse arrangement, and the number of the silicon wafers can be carried by the stacked reaction carrying component to 1200 through longitudinal expansion to 4 layers.
Referring to fig. 29, after being subjected to a pre-process texturing and cleaning, a silicon wafer 13 for a heterojunction solar cell is transferred into the stacked reaction carrier assembly 21, the stacked reaction carrier assembly 21 is fixed by using the clamping points of the first electrode 11 and the second electrode 12 of the stacked reaction carrier assembly, the stacked reaction carrier assembly 21 is transferred into the reaction cavity 23 through an automatic structure, the movable cavity door 25 forms a sealed reaction cavity after moving the sealed reaction cavity 23, and the electrode connecting end 15 on the electrode is connected with the plasma generating electrode 37 on the inner wall of the reaction cavity 23; the reaction cavity 23 is vacuumized to about 1.5Pa, meanwhile, the heating plates 22 at two sides heat the stack reaction bearing component 21 and the silicon wafer 13 arranged on the stack reaction bearing component to 150-200 ℃, and the silicon wafer 13 can be quickly heated to a preset temperature through the heating plates at two sides due to the small sizes of the electrode plates and the silicon wafer; siH is fed from the off-gas line 24 4 、H 2 、PH 3 、B 2 H 6 And CO 2 The mixed gases form a glow plasma region 27 in the electrode space for depositing intrinsic non-characteristicsThe crystalline silicon layer and the doped amorphous or microcrystalline silicon layer, and the excess gases and reaction products are pumped to an exhaust gas treatment system via a pumping line 26.
Example 3: horizontal PECVD equipment with expandable stack type stack reaction bearing component
The horizontal PECVD device comprises a reaction cavity 23, a stacked reaction bearing component 21, a heating plate 22, a special gas pipeline 24, a gas exhaust pipeline 26, a movable cavity door 25, a fixed seat component 29, a special gas cabinet 31, an electric cabinet 32 and a vacuum pump set 33.
As shown in fig. 30 to 32, the reaction chamber of the PECVD apparatus is horizontally arranged, the silicon wafer in the stacked reaction carrier is vertically placed on the surface of the electrode plate in the stacked reaction carrier, and the stacked reaction carrier can be independently and parallelly arranged in the reaction chamber and can be expanded to a multi-layer arrangement; the movable cavity door moves to the opening of the reaction cavity in the vertical direction and forms a closed space with the reaction cavity, and the vacuum condition requirement is met by pumping air through the vacuum pump set; the heating plates are arranged at the left side and the right side of the stacked reaction bearing assembly, can maintain the coating temperature within a set requirement range, and can select a resistance wire heating structure and/or an infrared heating structure; in the process, the movable cavity door is provided with a gas distribution cover with a multi-layer gas distribution structure, and special gas enters the stack reaction bearing assembly from uniformly distributed gas distribution holes, so that the gas uniformly balances to pass through a coating area, and the uniformity of coating and high doping efficiency are ensured.

Claims (9)

1. A box-type expandable stack PECVD system, characterized in that: the device comprises a reaction cavity, an air supply assembly for supplying air to the reaction cavity, a vacuum pump set for sucking air in the reaction cavity, a plurality of stack type reaction bearing assemblies which can be transversely arranged and/or longitudinally arranged in the reaction cavity, and heating assemblies which are arranged in the reaction cavity and distributed beside the stack type reaction bearing assemblies.
2. The box-type expandable stack PECVD system according to claim 1, wherein: the reaction cavity is of a vertical structure and comprises a vertical reaction cavity shell forming a cavity and a cavity door which is matched with the vertical reaction cavity shell to open and close the cavity, and the stack type reaction bearing assembly is vertically arranged in the cavity of the reaction cavity shell; or the reaction cavity is of a horizontal structure, and comprises a horizontal reaction cavity shell forming a cavity and a cavity door matched with the horizontal reaction cavity shell to open and close the cavity, and the stack reaction bearing assembly is horizontally arranged in the cavity of the reaction cavity shell.
3. The box-type expandable stack PECVD system according to claim 1, wherein: the air supply assembly comprises an air supply pipeline connected with the reaction cavity through an air supply port and an air supply cabinet connected with an air inlet of the air supply pipeline.
4. The box-type expandable stack PECVD system according to claim 1, wherein: the vacuum pump set comprises an air extraction pipeline with an air extraction opening connected with the reaction cavity and vacuum pump equipment connected with an air outlet of the air extraction pipeline.
5. The box-type expandable stack PECVD system according to any of claims 1-4, wherein: the stack type reaction bearing component mainly comprises more than one first electrode and more than one second electrode with the polarity opposite to that of the first electrode; adjacent first electrodes and second electrodes are arranged at intervals, the plate surfaces of the adjacent first electrodes and second electrodes are opposite to each other to form a coating interval, and the plate surfaces of the first electrodes and/or the second electrodes in the coating interval are used for bearing a substrate; the reaction cavity is provided with an air inlet structure and an air outlet structure which are mutually matched to enable air to flow through a coating interval, the air inlet structure is connected with an air supply assembly, and the air outlet structure is connected with a vacuum pump set.
6. The box-type expandable stack PECVD system according to claim 5, wherein: the first electrode and the second electrode are of a polar plate type structure, and are provided with protruding parts serving as electrode connecting ends.
7. The box-type expandable stack PECVD system according to claim 5, wherein: the stacked reaction bearing assembly comprises a plurality of spliced coating units which are correspondingly spliced, wherein each spliced coating unit comprises more than one first electrode, more than one second electrode and an insulating support column for fixing the first electrode and the second electrode at intervals; or, the stack reaction bearing component comprises an end coating unit and more than one splicing coating unit correspondingly connected with the end coating unit, the end coating unit comprises more than one end first electrode, more than one end second electrode and end insulation support columns for fixing the end first electrodes and the end second electrodes at intervals, and the splicing coating unit comprises more than one splicing first electrode, more than one splicing second electrode and splicing insulation support columns for fixing the splicing first electrodes and the splicing second electrodes at intervals and enabling one ends of the splicing insulation support columns to extend out to form cantilevers for butt joint with the end coating units or adjacent splicing coating units.
8. The box-type expandable stack PECVD system according to claim 5, wherein: the air inlet structure comprises more than one spoiler for separating the space between the inner cavity wall and the outer cavity wall of the reaction cavity to form more than two uniform air cavities; the spoiler and the inner cavity wall of the reaction cavity are sequentially arranged from outside to inside, and air homogenizing holes are formed from sparse to dense; the outer cavity wall of the reaction cavity is provided with an air inlet connected with an air supply assembly.
9. The box-type expandable stack PECVD system of claim 8, wherein: the air homogenizing holes on the inner cavity wall of the reaction cavity adopt a spray type structure.
CN202320308921.9U 2023-01-20 2023-02-24 Box-type expandable stack PECVD system Active CN219470193U (en)

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