CN112159973A - Device for preparing passivation film layer of Topcon battery and process flow thereof - Google Patents
Device for preparing passivation film layer of Topcon battery and process flow thereof Download PDFInfo
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- CN112159973A CN112159973A CN202011160394.9A CN202011160394A CN112159973A CN 112159973 A CN112159973 A CN 112159973A CN 202011160394 A CN202011160394 A CN 202011160394A CN 112159973 A CN112159973 A CN 112159973A
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- 238000002161 passivation Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims description 27
- 238000000576 coating method Methods 0.000 claims abstract description 144
- 239000011248 coating agent Substances 0.000 claims abstract description 143
- 230000005540 biological transmission Effects 0.000 claims abstract description 29
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 28
- 238000011068 loading method Methods 0.000 claims abstract description 24
- 239000007888 film coating Substances 0.000 claims abstract description 16
- 238000009501 film coating Methods 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 70
- 229910052710 silicon Inorganic materials 0.000 claims description 69
- 239000010703 silicon Substances 0.000 claims description 69
- 235000012431 wafers Nutrition 0.000 claims description 59
- 235000012239 silicon dioxide Nutrition 0.000 claims description 35
- 239000000377 silicon dioxide Substances 0.000 claims description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 20
- 238000002360 preparation method Methods 0.000 claims description 16
- 238000005507 spraying Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 239000007921 spray Substances 0.000 claims description 6
- 230000005641 tunneling Effects 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 125000004122 cyclic group Chemical group 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 70
- 239000007789 gas Substances 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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Abstract
The invention discloses a device for preparing a passivation film layer of a Topcon battery, which comprises a loading cavity, a preheating cavity, a vacuum transmission cavity, a coating module and a loading-out cavity, wherein the loading cavity is connected with the preheating cavity, the preheating cavity is arranged at one side of the vacuum transmission cavity, a plurality of coating modules are arranged along the periphery of the vacuum transmission cavity, the coating modules are arranged in a cluster mode, the loading-out cavity is connected with the vacuum transmission cavity, a manipulator is arranged in the vacuum transmission cavity, and the coating module comprises an outer vacuum cavity and a coating cavity. The invention has the beneficial effects that: the cluster type multilayer stacked coating cavity can improve the productivity, reduce the occupied area, reduce the cost and reduce the deterioration of the coating uniformity; the plate type ALD and PECVD or plate type PEALD and PECVD combined film coating mode realizes on-line doping, improves the film coating speed, improves the productivity and meets the performance quality requirements of different passivation film layers of the Topcon battery.
Description
Device for preparing passivation film layer of Topcon battery and process flow thereof
Technical Field
The invention relates to the technical field of solar cell coating, in particular to a device for preparing a passivation film layer of a Topcon cell and a process flow thereof.
Background
Passivation tunneling silicon dioxide (SiO) layer for preparing Topcon solar cell on current market2) And the doped polycrystalline silicon film layer is mainly prepared by LPCVD equipment, tubular PEALD equipment and tubular PECVD equipment are adopted, and linear transmission plate type PECVD equipment is adopted.
The preparation method by adopting LPCVD equipment comprises the following steps: placing a silicon wafer in a quartz boat, transferring the quartz boat into a high-temperature quartz tube, vacuumizing the quartz tube, introducing process gas into the quartz boat, oxidizing the surface of the silicon wafer with high temperature to form a silicon dioxide layer film, and decomposing SiH at high temperature4Gas in SiO2And depositing amorphous and polycrystalline silicon film layer on the surface. The temperature and energy consumption required by the preparation of the LPCVD equipment are high, the process temperature is higher than 600 ℃, the quality of the silicon wafer can be damaged by the long-time high temperature, and meanwhile, the winding plating phenomenon is very serious when the LPCVD equipment is used for coating, so that the difficulty of the subsequent etching process is increased, the production yield is reduced, and the production cost is increased. When LPCVD equipment is used for preparing doped amorphous silicon and doped polysilicon, the coating rate is very low, and the doping uniformity is poor, so an off-line doping mode is generally adopted, that is, after a silicon dioxide layer and undoped amorphous silicon and undoped polysilicon are prepared by LPCVD, a diffusion furnace or ion implantation equipment is additionally adopted to dope the amorphous silicon film layer and the microcrystalline silicon film layer, and then high-temperature annealing is carried out to activate doping elements and form a polysilicon film with high crystallization rate, so that the process steps are increased, and the equipment cost is also increased.
The method for preparing the SiO2 and the doped polysilicon film layer by adopting the tubular PEALD and tubular PECVD equipment comprises the following steps: placing a silicon wafer in a graphite boat, then sending the silicon wafer into a tubular cavity, vacuumizing the cavity and heating the graphite boat and the silicon wafer; the graphite boat is connected with a power supply, every two boat sheets form a positive electrode and a negative electrode, process gas is introduced, and the power supply is turned on, so that plasma can be formed between the graphite boat sheets; the process gas is dissociated to deposit the desired film on the surface of the silicon wafer. Because the positive and negative electrodes of the graphite boat sheet are isolated and insulated by the insulating ceramic ring, the silicon wafer is placed in the graphite boat, and the insulating ceramic ring between the positive and negative electrodes of the graphite boat sheet is easily plated with the doped polycrystalline silicon layer to form conduction, the tubular PECVD can not realize the preparation of the online doped polycrystalline silicon layer; and the tubular PECVD generally adopts a 40KHz power supply, which cannot be matched with a high-frequency (13.56MHz) power supply, and the low-frequency power supply increases ion damage to the surface of a sample, thereby influencing the conversion efficiency of the Topcon solar cell.
The existing design scheme for preparing the silicon dioxide layer and the doped polysilicon layer of the Topcon solar cell by using the plate-type PECVD adopts a linear transmission mode, the used coating cavity is of a single-layer structure, the productivity is low, the capacity can be improved only by increasing the size of the cavity, but after the cavity is enlarged, the deformation of a spray plate, a heating plate and the like in the cavity is serious under the influence of the coating process temperature (250-400 ℃), the uniformity of the coating layer is obviously reduced, and the capacity is difficult to improve. And the cavities are connected together in a linear arrangement, and the tray carries silicon wafers to be transported through each process cavity. When the doped polycrystalline silicon layer of the Topcon battery is prepared, the film layer is thick, and a plurality of cavities are needed to prepare the doped polycrystalline silicon layer, for example, when three cavities which are linearly connected are used for preparing doped amorphous and polycrystalline cavities, each cavity only finishes the thickness of one third of the film layer, so that the tray can be ensured to be sequentially transmitted backwards at a certain takt time, the mechanical actions of the tray outside the transmission process and the film coating process among the cavities can be increased, the takt time is seriously influenced, the production performance is reduced, and meanwhile, the quality of the film layer is also influenced by the fact that the same film is coated in different cavities.
Disclosure of Invention
The invention aims to provide a device for preparing a passivation film layer of a Topcon battery and a process flow thereof, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: a device for preparing a passivation film layer of a Topcon battery comprises a loading cavity, a preheating cavity, a vacuum transmission cavity, a coating module and a loading-out cavity, wherein the loading cavity is connected with the preheating cavity, the preheating cavity is arranged on one side of the vacuum transmission cavity, a plurality of coating modules are arranged along the periphery of the vacuum transmission cavity and are arranged in a cluster manner, the loading-out cavity is connected with the vacuum transmission cavity, and a manipulator is arranged in the vacuum transmission cavity;
the coating module comprises an outer vacuum cavity and a coating cavity, wherein the coating cavities are stacked in the outer vacuum cavity, supporting legs are arranged below the coating cavities, valves connected with a vacuum transmission cavity are arranged on the side faces of the coating cavities, and air suction holes are formed in the coating cavities.
Preferably, the bottom of the coating cavity is provided with a heating plate, and the top of the coating cavity is provided with an insulating plate.
Preferably, a spraying plate is arranged in the coating cavity and is arranged below the insulating plate, the spraying plate is connected with an air inlet pipeline and an RF power feed-in connecting wire, and the RF power feed-in connecting wire is connected with an RF power.
Further preferably, a compensation air inlet spraying plate is arranged on the side face in the coating cavity.
Preferably, the loading chamber, the preheating chamber and the unloading chamber are designed to be of a multi-layer stacked structure, the number of layers is-one, and the manipulator is a multi-layer vacuum manipulator, and the number of layers is 1-10.
Further preferably, the coating mode of the coating cavity is any one of plate ALD and PECVD or a combination of plate PEALD and PECVD.
Further preferably, the outer vacuum cavity is a square cavity made of stainless steel, the coating cavity is made of aluminum, a heating wire is arranged in the cavity wall, and a switch door is arranged on the side surface, far away from the valve, of the coating cavity.
The invention also provides a process flow of the device for preparing the passivation film layer of the Topcon battery, which comprises the following steps:
1) transferring the tray loaded with the silicon wafer into a loading cavity, and vacuumizing the loading cavity;
2) conveying the tray and the silicon wafers in the tray into a preheating cavity for preheating, wherein the preheating temperature is 150-500 ℃;
3) conveying the preheated silicon wafer and the tray into a coating cavity of a coating module through a manipulator, and preparing a silicon dioxide film layer in a multi-cycle manner;
4) after the silicon chip finishes tunneling through the silicon dioxide layer, the silicon chip and the tray are conveyed into a coating cavity of another coating module through a manipulator, and the doped amorphous and microcrystalline silicon film layer is prepared;
5) and after the silicon wafer is doped with the amorphous and microcrystalline silicon film layer, taking out the silicon wafer and the tray through a manipulator, conveying the silicon wafer and the tray into a carrying-out cavity, breaking vacuum in the carrying-out cavity, taking out the tray and the silicon wafer, and completing preparation of the back passivated silicon dioxide and the doped amorphous and microcrystalline silicon film layer of the Topcon battery.
Further preferably, the number of the cyclic preparation of the silica film layer in the step is 5-25, and the coating mode of the silica film layer in the step is any one of ALD deposition or PEALD deposition.
Further preferably, the film plating mode of the amorphous and microcrystalline silicon film layer doped in the step is plate PECVD.
Advantageous effects
According to the device for preparing the passivation film layer of the Topcon battery, a cluster type multilayer stacked coating cavity structure is adopted, so that the productivity is improved, the occupied area is reduced, the cost is reduced, the size of a coating cavity is reduced, the problem of uniformity deterioration of a PEVCD coating is solved, a high-frequency power supply is adopted, the standing wave effect of the high-frequency power supply is avoided, and the uniformity of the coating thickness is improved; the RF power supply is favorable for improving the film coating speed, reducing ion damage, saving gas consumption and realizing on-line cleaning; the plate type PECVD film coating mode can realize online doping, improve the film coating speed and improve the productivity; the film coating mode combining plate type ALD and PECVD or plate type PEALD and PECVD meets the performance quality requirements of different passivation film layers of the Topcon battery.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for preparing a passivation film layer of a Topcon battery disclosed in the present invention;
FIG. 2 is a schematic structural diagram of a coating module according to the present disclosure;
FIG. 3 is a schematic structural diagram of a coating chamber disclosed in the present invention.
Reference numerals
1-loading cavity, 2-preheating cavity, 3-vacuum transmission cavity, 4-manipulator, 5-coating module, 51-outer vacuum cavity, 52-coating cavity, 521-heating plate, 522-insulating plate, 523-spraying plate, 524-air inlet pipeline, 525-RF power supply feed connecting line, 526-compensation air inlet spraying plate, 53-valve, 54-supporting leg, 6-unloading cavity and 7-tray.
Detailed Description
The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.
As shown in fig. 1-3, an apparatus for preparing a passivation film layer of a Topcon battery includes a loading chamber 1, a preheating chamber 2, a vacuum transmission chamber 3, a coating module 5 and a loading chamber 6, wherein the loading chamber 1 is connected to the preheating chamber 2, the preheating chamber 2 is disposed at one side of the vacuum transmission chamber 3, a plurality of coating modules 5 are disposed along the periphery of the vacuum transmission chamber 3, the plurality of coating modules 5 are arranged in a cluster manner, the loading chamber 6 is connected to the vacuum transmission chamber 3, and a manipulator 4 is disposed in the vacuum transmission chamber 3;
the coating module 5 comprises an outer vacuum cavity 51 and a coating cavity 52, wherein the coating cavities 52 are stacked in the outer vacuum cavity 51, supporting legs 54 are arranged below the coating cavities 52, a valve 53 connected with the vacuum transmission cavity 3 is arranged on the side surface of the coating cavity 52, and an air suction hole 55 is formed in the coating cavity 52.
Preferably, the bottom in the coating cavity 52 is provided with a heating plate 521 for heating the silicon wafer, the top in the coating cavity 52 is provided with an insulating plate 522 for insulating and isolating, the heating plate 521 is used for heating the tray 7 and the silicon wafer, the tray 7 adopts a solid tray structure design, the problem of plating winding generated by LPCVD coating can be greatly reduced, the cost of an etching section is reduced, the yield is improved, and the conversion efficiency is improved. And the structural design of the stacked coating cavity 52 can realize high productivity without making a large cavity, reduces the problem that the uniformity of coating is poor when the PEVCD cavity is made large, is beneficial to adopting a power supply with a frequency of VHF (40MHz) or above, avoids the standing wave effect of a high-frequency power supply, improves the uniformity of coating thickness, and can also improve the coating rate, reduce ion damage and save the gas consumption by adopting the VHF and higher-frequency power supplies.
Preferably, a spray plate 523 is arranged in the coating cavity 52 and is arranged below the insulating plate 522, the spray plate 523 is connected with an air inlet pipe 524 and an RF power supply feed connection line 525, and the RF power supply feed connection line 525 is connected with an RF power supply. Wherein, the inlets of the air inlet pipes 524 on the shower plate 523 are one or more to ensure the uniformity of the gas sprayed onto the surface of the silicon wafer, and the feeding points of the RF power feeding connection wires 525 on the shower plate 523 are one or more. The RF power supply fed into the RF power supply connected with the connecting line 525 can realize on-line cleaning, fluorine-containing gas is introduced into the film coating cavity 52, the fluorine-containing gas is dissociated by the RF power supply to react with the film layer deposited in the cavity, and the produced gas is pumped out through the pumping hole 55. The coating cavity 52 may further be connected to an RPS device, and when online cleaning is performed, the RPS dissociates the fluorine-containing gas to generate fluorine ions, which react with the film deposited in the cavity to generate gas, and the gas is then pumped away through the pumping hole 55.
Preferably, a compensation air inlet spray plate 526 is arranged on the side surface in the coating cavity 52 and is used for spray compensation.
Preferably, the loading chamber 1, the preheating chamber 2 and the unloading chamber 6 are all designed to be of a multi-layer stacked structure, the number of layers is 1-10, the manipulator 4 is a multi-layer vacuum manipulator, the number of layers is 1-10, a plurality of trays can be simultaneously conveyed, and the multi-layer vacuum manipulator is high in working speed and high in efficiency.
Preferably, the coating mode of the coating cavity 52 is any one of a plate ALD and a PECVD or a plate PEALD and a PECVD combination, wherein the plate ALD or the plate PEALD is a deposition coating of a silicon dioxide film, and the PECVD is a coating of a doped amorphous or microcrystalline silicon film, and meanwhile, the plate PECVD coating mode can be matched with a power supply with a higher frequency (2MHz-80MHz), so that ion damage of plasma to the surface of a silicon wafer is reduced, the coating rate is increased, and the productivity is increased. Meanwhile, the plate type PECVD film coating mode can well realize on-line doping, extra diffusion or ion implantation equipment is not needed, the process steps are saved, and the cost is saved. The plate type ALD and PECVD or plate type PEALD and PECVD coating modes do not need vacuum breaking in the middle, the process temperature difference between the plate type PEVCD and the plate type ALD and PEALD is small, the influence of temperature rise and fall can be reduced, and the perfect combination of the two coating modes is realized.
Preferably, the outer vacuum cavity 51 is a square cavity made of stainless steel, the coating cavity 52 is made of aluminum, a heating wire is arranged in the cavity wall, and a switch door is arranged on the side surface, far away from the valve 53, of the coating cavity 52, so that vacuum breaking maintenance can be conveniently carried out on a single coating module 5 or the single coating cavity 52, and coating operations of other coating modules 5 and the coating cavity 52 cannot be influenced. The embodiment also adopts the solid tray, so that the problem that the back surface of the silicon wafer is plated around can be reduced and even avoided;
example one
In this implementation, the coating mode of coating film chamber 52 is board-like ALD and PECVD, and is a plurality of coating film module 5 uses vacuum transmission chamber 3 to arrange according to the circumferencial direction as the centre of a circle, can set up four coating film modules 5 (coating film module 5 in fig. 1 is six) and carry out the coating film operation in step, and every coating film module 5 all adopts the structure of three stromatolite coating film chambers 52 (also can be more stromatolite coating film chambers 52), and is three coating film chambers 52 from the bottom up piles up in proper order and arranges, and every coating film chamber 52 is an independent vacuum coating cavity, and is three coating film chamber 52 places in an outer vacuum cavity 51, realizes interior two vacuum cavity structures. Two of the coating modules 5 are used for preparing ultrathin silicon dioxide film layers, and the other two coating modules 5 are used for preparing doped amorphous and microcrystalline silicon film layers.
The process flow of the device for preparing the passivation film layer of the Topcon battery comprises the following steps:
1) simultaneously transferring a plurality of trays 7 loaded with silicon wafers into the loading cavity 1, and vacuumizing the loading cavity 1;
2) the tray 7 and the silicon wafers in the tray are conveyed into a preheating cavity 2 for preheating, and the preheating temperature is 150-;
3) the preheated silicon wafer and the tray 7 are conveyed to a heating plate 521 in a coating cavity 52 of two coating modules 5 for preparing silicon dioxide films through a manipulator 4, a valve 53 is closed, process gases of ozone and silicon source steam are alternately introduced through an air inlet pipeline 524 and enter the coating cavity 52 through a spraying plate 523 to perform ALD deposition coating on the silicon wafer; firstly introducing silicon source steam for 1-10s, then independently introducing Ar gas, purging away silicon sources which are not adsorbed by the surface of the silicon wafer, wherein the purging time is 1-10s, then introducing ozone to react with a first precursor silicon source adsorbed by the surface of the silicon wafer to form a silicon dioxide film, and finally introducing Ar gas again to purge residual ozone and reaction byproducts, so that the process cycle of an ALD preparation mode is completed, the thickness of a silicon dioxide film layer formed on the surface of the silicon wafer is continuously increased along with the increase of cycle times, and the total cycle times are within the range of 5-25 cycles; wherein, the ozone can be prepared by an ozone generator, the silicon source vapor can be carried into the film coating cavity 52 by argon, and the flow rate of the argon is 500-;
4) after the silicon wafer finishes tunneling through the silicon dioxide layer, the silicon wafer and the tray 7 are conveyed to the heating plate 521 in the coating cavities 52 of the other two coating modules 5 by the manipulator 4, the preparation of the doped amorphous and microcrystalline silicon film layer is carried out by adopting a plate PECVD coating mode, firstly, the heating plate 521 is heated, the tray 7 and the silicon wafer therein are heated to 200-450 ℃, and process gas SiH is introduced through the air inlet pipeline 5244Ar or H2And pH3And H2The pressure of the mixed gas is 0.2-2torr, and then an RF power supply is started through an RF power supply feed-in connecting wire 525 to carry out film coating, so that the preparation of the doped amorphous and microcrystalline silicon film layer is completed; wherein is SiH4500-21000-3And H2The mixed gas is 500-5000sccm, the power supply power is 0.5-5KW, and the coating time is 60-180 s;
5) after the silicon wafer is doped with the amorphous and microcrystalline silicon film layer, the silicon wafer and the tray 7 are taken out through the manipulator 4 and are conveyed into the carrying-out cavity 6, the carrying-out cavity 6 is subjected to vacuum breaking, the tray 7 and the silicon wafer are taken out, and preparation of the back passivation silicon dioxide and the amorphous and microcrystalline silicon film layer of the Topcon battery is completed.
Putting the silicon wafer prepared in the steps 1), 2), 3), 4) and 5) into an annealing furnace at the temperature of 700-2O3And a SiNx layer is plated on the back surface of the silicon wafer, and finally screen printing is carried out to prepare front and rear electrodes of the battery.
Example two
In this implementation, the coating mode of coating film chamber 52 is board-like PEALD and PECVD, and is a plurality of coating film module 5 uses vacuum transmission chamber 3 to arrange according to the circumferencial direction as the centre of a circle, can set up four coating film modules 5 (coating film module 5 in fig. 1 is six) and carry out the coating film operation in step, and every coating film module 5 all adopts the structure of three stromatolite coating film chambers 52 (also can be more stromatolite coating film chambers 52), and is three coating film chambers 52 from the bottom up piles up in proper order and arranges, and every coating film chamber 52 is an independent vacuum coating chamber, and is three coating film chamber 52 places in an outer vacuum chamber 51, realizes interior two vacuum cavity structures. Two of the coating modules 5 are used for preparing ultrathin silicon dioxide film layers, and the other two coating modules 5 are used for preparing doped amorphous and microcrystalline silicon film layers.
The process flow of the device for preparing the passivation film layer of the Topcon battery comprises the following steps:
1) simultaneously transferring a plurality of trays 7 loaded with silicon wafers into the loading cavity 1, and vacuumizing the loading cavity 1;
2) the tray 7 and the silicon wafers in the tray are conveyed into a preheating cavity 2 for preheating, and the preheating temperature is 150-;
3) the preheated silicon wafer and the tray 7 are conveyed to a heating plate 521 in a coating cavity 52 of two coating modules 5 for preparing silicon dioxide films through a manipulator 4, a valve 53 is closed, process gas oxygen and silicon source steam are alternately introduced through an air inlet pipeline 524 and enter the coating cavity 52 through a spraying plate 523, and through RF power dissociation reaction with dissociation power of 200-6000W, PEALD deposition coating is carried out on the silicon wafer, wherein the oxygen flow is 100-10000 sccm;
4) after the silicon wafer finishes tunneling through the silicon dioxide layer, the silicon wafer and the tray 7 are conveyed to the heating plate 521 in the coating cavities 52 of the other two coating modules 5 through the manipulator 4, the preparation of the doped amorphous and microcrystalline silicon film layer is carried out by adopting a plate PECVD coating mode, firstly, the heating plate 521 is heated, the tray 7 and the silicon wafer therein are heated to 200-450 ℃, and the silicon wafer is introduced into the heating plate 521SiH as a process gas is introduced through an inlet line 5244Ar or H2And pH3And H2The pressure of the mixed gas is 0.2-2torr, then an RF power supply is started, the power supply power is fed into the film coating cavity 52 through an RF power supply feed-in connecting wire 525 for film coating, and the preparation of the doped amorphous and microcrystalline silicon film layer is completed; wherein is SiH4500-21000-3And H2The mixed gas is 500-5000sccm, the power supply power is 0.5-5KW, and the coating time is 60-180 s;
5) after the silicon wafer is doped with the amorphous and microcrystalline silicon film layer, the silicon wafer and the tray 7 are taken out through the manipulator 4 and are conveyed into the carrying-out cavity 6, the carrying-out cavity 6 is subjected to vacuum breaking, the tray 7 and the silicon wafer are taken out, and preparation of the back passivation silicon dioxide and the amorphous and microcrystalline silicon film layer of the Topcon battery is completed.
Putting the silicon wafer prepared in the steps 1), 2), 3), 4) and 5) into an annealing furnace at the temperature of 700-2O3And a SiNx layer is plated on the back surface of the silicon wafer, and finally screen printing is carried out to prepare front and rear electrodes of the battery.
EXAMPLE III
Different from the first embodiment and the second embodiment, in the second embodiment, the silicon dioxide layer is prepared by using a UV dissociation method, and in step 3) of the process flow of the apparatus for preparing the passivation film layer of the Topcon battery, the preheated silicon wafer and the tray 7 are conveyed to the heating plate 521 in the coating cavities 52 of the two coating modules 5 for preparing the silicon dioxide film layer by the manipulator 4, and the valve 53 is closed; firstly, 500 plus 5000sccm oxygen is introduced, ozone is generated through UV, so that the ozone and silicon atoms on the surface of the silicon wafer are subjected to oxidation reaction to form a silicon dioxide film layer, the silicon dioxide film layer generated by the oxidation of the surface of the silicon wafer is continuously thickened through the continuous introduction of the oxygen, and the preparation of the silicon dioxide film layer of the silicon wafer is completed after the oxygen is introduced for 10-120 s.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the content of the present invention within the scope of the protection of the present invention.
Claims (10)
1. The utility model provides a device of preparation Topcon battery passivation film layer which characterized in that: the loading device comprises a loading cavity (1), a preheating cavity (2), a vacuum transmission cavity (3), coating modules (5) and a loading-out cavity (6), wherein the loading cavity (1) is connected with the preheating cavity (2), the preheating cavity (2) is arranged on one side of the vacuum transmission cavity (3), a plurality of coating modules (5) are arranged along the periphery of the vacuum transmission cavity (3), the coating modules (5) are arranged in a cluster manner, the loading-out cavity (6) is connected with the vacuum transmission cavity (3), and a manipulator (4) is arranged in the vacuum transmission cavity (3);
coating film module (5) contain outer vacuum cavity (51), coating film chamber (52), and is a plurality of coating film chamber (52) stack is in outer vacuum cavity (51), the below of coating film chamber (52) is equipped with supporting leg (54), the side of coating film chamber (52) is equipped with valve (53) that are connected with vacuum transmission chamber (3), bleeder vent (55) have been seted up on coating film chamber (52).
2. An apparatus for preparing a passivation film layer of a Topcon battery according to claim 1, wherein: the bottom in the coating chamber (52) is equipped with hot plate (521), the top in coating chamber (52) is equipped with insulation board (522).
3. An apparatus for preparing a passivation film layer of a Topcon battery according to claim 2, wherein: the coating device is characterized in that a spraying plate (523) is arranged in the coating cavity (52) and arranged below the insulating plate (522), the spraying plate (523) is connected with an air inlet pipeline (524) and an RF power feed-in connecting wire (525), and the RF power feed-in connecting wire (525) is connected with an RF power supply.
4. An apparatus for preparing a passivation film layer of a Topcon battery according to claim 1, wherein: and a compensation air inlet spray plate (526) is arranged on the side surface in the coating cavity (52).
5. An apparatus for preparing a passivation film layer of a Topcon battery according to claim 1, wherein: the loading cavity (1), the preheating cavity (2) and the loading cavity (6) are all designed by adopting a multilayer stacked structure, the number of layers is 1-10, and the manipulator (4) is a multilayer vacuum manipulator, and the number of layers is 1-10.
6. An apparatus for preparing a passivation film layer of a Topcon battery according to claim 1, wherein: the coating mode of the coating cavity (52) is any one of plate ALD and PECVD or plate PEALD and PECVD combined coating mode.
7. An apparatus for preparing a passivation film layer of a Topcon battery according to claim 1, wherein: outer vacuum cavity (51) are the square cavity that stainless steel made, coating chamber (52) adopt the aluminium material to make, are equipped with the heater strip in its chamber wall, the side of keeping away from valve (53) on coating chamber (52) is equipped with the switch door.
8. A process flow of an apparatus for preparing a passivation film layer of a Topcon cell according to any one of claims 1 to 7, comprising the steps of:
1) transferring the tray (7) loaded with the silicon wafer into the loading cavity (1), and vacuumizing the loading cavity (1);
2) the tray (7) and the silicon wafers in the tray are conveyed into a preheating cavity (2) for preheating, wherein the preheating temperature is 150-500 ℃;
3) the preheated silicon wafer and the tray (7) are conveyed into a coating cavity (52) of a coating module (5) through a manipulator (4) to prepare a silicon dioxide film layer for multiple cycles;
4) after the silicon chip finishes tunneling the silicon dioxide layer, the silicon chip and the tray (7) are conveyed into a coating cavity (52) of another coating module (5) through the mechanical arm (4) to prepare a doped amorphous and microcrystalline silicon film layer;
5) after the silicon wafer is doped with the amorphous and microcrystalline silicon film layer, the silicon wafer and the tray (7) are taken out through the manipulator (4) and are conveyed into the carrying-out cavity (6), the carrying-out cavity (6) is subjected to vacuum breaking, the tray (7) and the silicon wafer are taken out, and preparation of the back passivation silicon dioxide and the doped amorphous and microcrystalline silicon film layer of the Topcon battery is completed.
9. An apparatus for preparing a passivation film layer of a Topcon battery according to claim 8, wherein: the number of the cyclic preparation times of the silicon dioxide film layer in the step 3) is 5-25, and the film coating mode of the silicon dioxide film layer in the step 3) is any one of the film coating modes of ALD deposition or PEALD deposition.
10. An apparatus for preparing a passivation film layer of a Topcon battery according to claim 8, wherein: the film coating mode of the amorphous and microcrystalline silicon film layer doped in the step 4) is plate-type PECVD.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113066904A (en) * | 2021-03-31 | 2021-07-02 | 上海钧乾智造科技有限公司 | Ozone oxidation process and ozone oxidation system |
| CN113122827A (en) * | 2021-03-19 | 2021-07-16 | 苏州晟成光伏设备有限公司 | Equipment and process for preparing back-passivated solar cell |
| CN113445050A (en) * | 2021-05-27 | 2021-09-28 | 苏州晟成光伏设备有限公司 | Device and process for preparing Topcon solar cell |
| CN115148619A (en) * | 2022-06-17 | 2022-10-04 | 浙江鸿禧能源股份有限公司 | Detection equipment for Topcon battery passivation film layer and use method thereof |
| CN115852335A (en) * | 2022-10-17 | 2023-03-28 | 江苏微导纳米科技股份有限公司 | Film coating equipment and film coating method |
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2020
- 2020-10-26 CN CN202011160394.9A patent/CN112159973A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113122827A (en) * | 2021-03-19 | 2021-07-16 | 苏州晟成光伏设备有限公司 | Equipment and process for preparing back-passivated solar cell |
| CN113066904A (en) * | 2021-03-31 | 2021-07-02 | 上海钧乾智造科技有限公司 | Ozone oxidation process and ozone oxidation system |
| CN113445050A (en) * | 2021-05-27 | 2021-09-28 | 苏州晟成光伏设备有限公司 | Device and process for preparing Topcon solar cell |
| CN113445050B (en) * | 2021-05-27 | 2024-03-26 | 苏州晟成光伏设备有限公司 | Equipment for preparing Topcon solar cell |
| CN115148619A (en) * | 2022-06-17 | 2022-10-04 | 浙江鸿禧能源股份有限公司 | Detection equipment for Topcon battery passivation film layer and use method thereof |
| CN115148619B (en) * | 2022-06-17 | 2023-08-22 | 浙江鸿禧能源股份有限公司 | Detection equipment for Topcon battery passivation film layer and application method thereof |
| CN115852335A (en) * | 2022-10-17 | 2023-03-28 | 江苏微导纳米科技股份有限公司 | Film coating equipment and film coating method |
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