CN220317951U - Chamber belt cleaning device - Google Patents
Chamber belt cleaning device Download PDFInfo
- Publication number
- CN220317951U CN220317951U CN202321601595.7U CN202321601595U CN220317951U CN 220317951 U CN220317951 U CN 220317951U CN 202321601595 U CN202321601595 U CN 202321601595U CN 220317951 U CN220317951 U CN 220317951U
- Authority
- CN
- China
- Prior art keywords
- chamber
- cleaning
- gas
- gas supply
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 98
- 230000007246 mechanism Effects 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 238000010926 purge Methods 0.000 claims abstract description 17
- 238000009826 distribution Methods 0.000 claims description 35
- 239000007921 spray Substances 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 5
- 239000013049 sediment Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000013469 resistive pulse sensing Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Abstract
The utility model provides a chamber cleaning device, which comprises: the chamber is arranged at the lower part of the chamber, and is provided with a heating support assembly and a carrier plate on the heating support assembly; a gas supply assembly disposed at the top of the chamber, the gas supply assembly being connected to a process gas supply mechanism and a purge gas supply mechanism; the cleaning gas supply mechanism is two or more. By adopting two or more cleaning gas supply mechanisms, the cleaning gas is uniformly distributed in the cavity, the cleaning efficiency is improved, the cleaning time is reduced, and the production efficiency of PECVD is improved. The chamber cleaning device can be widely applied to PECVD plasma enhanced chemical vapor deposition equipment, is beneficial to keeping the cleaning of the chamber, and improves the film forming quality and the service life of the equipment. It has higher practical value and wide application prospect.
Description
Technical Field
The utility model relates to the field of vacuum chamber cleaning, in particular to a chamber cleaning device.
Background
PECVD chambers form co-deposits on the inner walls of the chamber during film formation, which are likely to form particles due to stress shedding, affecting film formation quality, and therefore PECVD chambers typically require cleaning after performing multiple deposition processes to remove deposition residues formed on the chamber walls. To achieve higher etch rates during the cleaning of PECVD chambers, the chamber is typically cleaned using a single RPS remote plasma source of high volume, with the cleaning plasma being a fluorine-containing reactive group. With the increasing size and area of PECVD coating chambers, even with high capacity RPSs, the life cycle (life cycle) of the cleaning gas is short, so the time for cleaning the high capacity chamber increases significantly, and it becomes difficult to clean the corners of the chamber. In addition, in case of an increase in the cleaning time, the production efficiency (throughput) of PECVD is lowered. Therefore, it is necessary to provide a chamber cleaning device, which ensures the cleaning effect and improves the cleaning efficiency.
Disclosure of Invention
In order to solve the above problems, the present utility model provides a chamber cleaning device, which can reduce the cleaning time for cleaning a large-sized chamber for processing a large-area carrier plate, improve the cleaning efficiency of the chamber and the service life of parts in the chamber, and improve the utilization rate of equipment, thereby further providing the production efficiency of the equipment.
In order to achieve the above purpose, the utility model adopts the following technical scheme: a chamber cleaning apparatus, comprising: the chamber is arranged at the lower part of the chamber, and is provided with a heating support assembly and a carrier plate on the heating support assembly; a gas supply assembly disposed at the top of the chamber, the gas supply assembly being connected to a process gas supply mechanism and a purge gas supply mechanism; the cleaning gas supply mechanism is two or more.
Further, the cleaning gas supply mechanisms are arranged around the process gas supply mechanisms and are symmetrically distributed or equally spaced from each other.
Further, the cavity comprises a cavity, a sealing cavity cover arranged on the upper part of the cavity and a cavity inner space.
Further, the gas supply assembly comprises an insulating plate arranged at the top of the inner side of the chamber, a gas distribution plate connected with the lower surface of the insulating plate, a spray plate connected with the lower surface of the gas distribution plate at a certain distance and used for supplying gas to the chamber, and a space area formed between the spray plate and the spray plate; the spray plate is provided with spray holes, so that the process gas and the cleaning gas are uniformly distributed in the chamber, and the sediment in the chamber is ensured to be sufficiently cleaned.
Further, the heating support assembly comprises a base, a heating element and a servo drive linkage mechanism; the base is arranged above the bottom of the cavity and provides a platform for supporting the carrier plate; the heating element 22 is connected with the base 21 and is used for adjusting the temperature of the carrier plate 3; the servo drive linkage mechanism is connected with the base and the chamber, so that the heating support assembly moves along the up-down direction according to a set distance, and space adjustment of a process and a cleaning area in the chamber is realized.
Further, the process gas supply mechanism comprises a gas inlet pipe and is arranged at the middle of the cavity cover and is supplied with the gas supply assembly through the gas inlet pipe; specifically, the process gas supply mechanism penetrates the gas distribution plate through a gas inlet pipe, and supplies process gas to the space-apart region 43 of the gas supply assembly.
Further, the number of the cleaning gas supply mechanisms is two, and the cleaning gas supply mechanisms are symmetrically arranged above the cavity cover by taking the process gas supply mechanisms as the center.
Further, the cleaning gas supply mechanisms comprise a gas connection part, a gate valve, a connecting pipe and a remote plasma source in sequence; the air distribution plate penetrates through the insulating plate through a connecting pipe and is connected with the air distribution plate in a sealing way; the cleaning gas is uniformly supplied to the interval space region through the gas distribution plate, and is uniformly supplied to all corners of the chamber through the spray plate.
Further, the gas distribution plate comprises a through hole connected with the process gas inlet pipe, a cleaning gas interface 422 which is symmetrically arranged by taking the process gas inlet pipe as a center and is coupled with the gas connection part, a first gas distribution channel which is symmetrically arranged at the cleaning gas interface, and a second gas distribution channel and a cleaning gas outlet which are vertically and equidistantly arranged at two sides of the first gas distribution channel.
Further, the widths of the first air dividing channel and the second air dividing channel are equal and arc-tangent; the cleaning gas outlets are distributed at equal intervals by taking the cleaning gas interface as the center.
The chamber cleaning device of the utility model has the following advantages:
1) By adopting two or more cleaning gas supply mechanisms, the cleaning gas is uniformly distributed in the cavity, the cleaning efficiency is improved, the cleaning time is reduced, and the production efficiency of PECVD is improved.
2) The design structure of the air distribution plate and the spray plate is simple, the operation is convenient, and the cost is low.
3) The heated support assembly may be adjusted as needed to provide better introduction of the cleaning gas into the corners or edges of the chamber during the cleaning process.
4) The chamber cleaning device can adapt to substrates with various sizes and meet different production requirements. The cavity and the cavity cover are made of high-temperature-resistant and corrosion-resistant materials so as to ensure normal operation in a high-temperature and high-corrosion process environment.
5) The setting of insulation board can play the effect of keeping apart electric current and protection cavity inner structure, improves the security and the stability of equipment.
In summary, the chamber cleaning device of the utility model can be widely applied to PECVD plasma enhanced chemical vapor deposition equipment, is beneficial to keeping the chamber clean, and improves the film forming quality and the service life of the equipment. It has higher practical value and wide application prospect.
Drawings
The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain the utility model. In the drawings:
fig. 1 is a schematic structural diagram of an embodiment of a chamber cleaning apparatus according to the present utility model.
Fig. 2 is a front view of a structure of a gas distribution plate in an embodiment of the chamber cleaning apparatus provided by the utility model.
Fig. 3 is a schematic structural view of a heating support assembly in an embodiment of a chamber cleaning apparatus according to the present utility model.
Fig. 4 is a schematic diagram of a spray plate structure with spray holes in an embodiment of the chamber cleaning device provided by the utility model.
Reference numerals illustrate: a chamber 1; a cavity 11; a cavity cover 12; a cavity inner space 13; heating the support assembly 2; a base 21; a heating element 22; a servo drive linkage 23; a carrier plate 3; a gas supply assembly 4; an insulating plate 41; a gas distribution plate 42; a through hole 421; a purge gas interface 422; an air outlet 423; a first branch air passage 424; a second shunt path 425; a space region 43; a shower plate 44; spray holes 441; a process gas supply mechanism 5; an intake pipe 51; a purge gas supply mechanism 6; a first purge gas supply mechanism 6A; a first gas connection 61A; a first gate valve 62A; a first connection pipe 63A; a remote plasma source 64A; a second purge gas supply mechanism 6B; a second gas connection 61B; a second gate valve 62B; a second connection pipe 63B; a second remote plasma source 64B.
Detailed Description
For the purpose of the present utility model; the technical scheme and advantages are more clearly understood, and the present utility model is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
Example 1:
as shown in fig. 1, the present utility model provides a chamber cleaning apparatus, comprising: a chamber 1, a heating support assembly 2 arranged at the lower part of the chamber and a carrier plate 3 arranged on the heating support assembly; a gas supply assembly 4 disposed at the top of the chamber, the gas supply assembly 4 being connected to a process gas supply mechanism 5 and a purge gas supply mechanism 6; the number of the cleaning gas supply mechanisms 6 is two.
Wherein the cleaning gas supply means 6 are arranged around the process gas supply means 5 and are symmetrically or equally spaced from each other. The chamber 1 includes a chamber body 11, a seal chamber cover 12 provided at an upper portion of the chamber body 1, and a chamber body internal space 13. The gas supply assembly comprises an insulating plate 41 arranged at the inner top of the chamber 1, a gas distribution plate 42 connected with the lower surface of the insulating plate 41, a spray plate 44 connected with the lower surface of the gas distribution plate 42 at a certain distance and supplying gas to the chamber, and a space region 43 formed between the spray plate and the spray plate; the shower plate 44 is provided with shower holes to uniformly distribute the process gas and the cleaning gas in the chamber, thereby ensuring that the sediment in the chamber 1 is sufficiently cleaned. The process gas supply mechanism 5 comprises a gas inlet pipe 51 and is arranged at the middle of the cavity cover 12 and is supplied to the gas supply assembly 4 through the gas inlet pipe 51; specifically, the process gas supply mechanism 5 penetrates the gas distribution plate 42 via a gas inlet pipe 51, and supplies the process gas to the space-apart region 43 of the gas supply assembly 4. The number of the cleaning gas supply mechanisms is two, namely a first cleaning gas supply mechanism 6A and a second cleaning gas supply mechanism 6B, and the cleaning gas supply mechanisms are symmetrically arranged above the cavity cover 12 by taking the process gas supply mechanism 5 as a center. The first cleaning gas supply mechanism 6A and the second cleaning gas supply mechanism 6B comprise a first gas connection portion 61A, a first gate valve 62A, a first connection pipe 63A, a first remote plasma source 64A, a second gas connection portion 61B, a second gate valve 62B, a second connection pipe 63B, and a second remote plasma source 64B, respectively; the insulating plate 41 is penetrated through the first connecting pipe 63A and the second connecting pipe 63B respectively, and is connected with the air distribution plate 42 in a sealing way; the cleaning gas is uniformly supplied to the space region 43 through the gas distribution plate 42, and is uniformly supplied to the corners of the chamber through the shower plate 44.
Example 2:
the structure of the gas distribution plate 42 of the gas supply assembly 4 is further optimized on the basis of embodiment 1. As shown in fig. 2, the gas distribution plate 42 includes a through hole 421 connected to the process gas inlet pipe 51, a purge gas port 422 coupled to the two gas connection parts 61A and 61B and symmetrically arranged around the process gas inlet pipe 51, a first gas distribution channel 424 symmetrically arranged on the purge gas port 422, and a second gas distribution channel 425 and a purge gas outlet 423 vertically and equidistantly arranged on both sides of the first gas distribution channel 424. The first shunt channel 424 and the second shunt channel 425 are equal in width and arc tangent. The cleaning gas outlets 423 are equidistantly distributed with the cleaning gas interface 422 as the center, so that the distance of the cleaning gas reaching the corners or edges in the chamber is shortened, and the cleaning time is shortened. L2=2 times L1 as shown; l4=2 times L3.
By uniformly supplying the purge gas to the space-apart regions 43 by the two purge gas supply units (6A, 6B) as compared with the single purge gas supply, the purge gas can be uniformly supplied into the chamber 1 through the shower plate 44, and further the purge gas can be sufficiently supplied to the corners or edges in the chamber 1, thereby improving the purge efficiency.
The chamber cleaning device can realize uniform distribution of cleaning gas in the chamber 1 by arranging more than two cleaning gas supply assemblies 6A and 6B, and effectively improve the cleaning effect and the cleaning efficiency. Meanwhile, the cleaning effect is further improved by adjusting the distance between the heating support assembly 2 and the gas supply assembly 4 and optimizing the structure of the gas distribution plate 42 so that the cleaning gas is more sufficiently supplied to the corners or edges in the chamber.
Example 3:
on the basis of example 2, the heating support assembly 2 was optimized. As shown in fig. 3, the heating support assembly 2 includes a base 21, a heating element 22, and a servo-drive linkage 23. The base 21 is disposed above the bottom of the chamber 1 and provides a platform for supporting the carrier plate 3. A heating element 22 is connected to the base 21 for adjusting the temperature of the carrier plate 3. The servo drive linkage mechanism 23 is connected with the base 21 and the chamber 1, so that the heating support assembly 2 can move along the up-down direction according to a set distance, and space adjustment of a process and cleaning area in the chamber 1 is realized.
Example 4:
the shower plate 44 of the gas supply assembly 4 was further optimized on the basis of example 3. As shown in fig. 4, the shower plate 44 includes a plurality of shower holes 441, and the shower holes 441 are arranged on the shower plate 44 in a specific arrangement so that the process gas and the cleaning gas are uniformly supplied to the process and cleaning regions. The number and arrangement of the spraying holes 441 can be adjusted according to practical application requirements, so as to achieve a better gas distribution effect.
The above description is illustrative of the preferred embodiment of the present utility model and is not intended to limit the present utility model, but is to be construed as including any modifications, equivalents, and improvements made within the spirit and principles of the present utility model.
Claims (8)
1. A chamber cleaning apparatus, comprising: the chamber is arranged at the lower part of the chamber, and is provided with a heating support assembly and a carrier plate on the heating support assembly; a gas supply assembly disposed at the top of the chamber, the gas supply assembly being connected to a process gas supply mechanism and a purge gas supply mechanism; the number of the cleaning gas supply mechanisms is two or more; the cleaning gas supply mechanisms are arranged around the process gas supply mechanisms and are symmetrically distributed or equally spaced; the cavity comprises a cavity, a sealing cavity cover arranged on the upper part of the cavity and a cavity inner space.
2. The chamber cleaning apparatus of claim 1, further characterized by: the gas supply assembly comprises an insulating plate arranged at the top of the inner side of the cavity, a gas distribution plate connected with the lower surface of the insulating plate, a spraying plate connected with the lower surface of the gas distribution plate at a distance and used for supplying gas to the cavity, and a space region formed between the spraying plate and the gas distribution plate; the spray plate is provided with spray holes, so that the process gas and the cleaning gas are uniformly distributed in the chamber, and the sediment in the chamber is ensured to be sufficiently cleaned.
3. The chamber cleaning apparatus of claim 1, further characterized by: the heating support assembly comprises a base, a heating element and a servo driving linkage mechanism; the base is arranged above the bottom of the cavity and provides a platform for supporting the carrier plate; the heating element is connected with the base and used for adjusting the temperature of the carrier plate; the servo drive linkage mechanism is connected with the base and the chamber, so that the heating support assembly moves along the up-down direction according to a set distance, and space adjustment of a process and a cleaning area in the chamber is realized.
4. The chamber cleaning apparatus of claim 1, further characterized by: the process gas supply mechanism comprises a gas inlet pipe and is arranged in the middle of the cavity cover and is supplied with the gas supply assembly through the gas inlet pipe.
5. The chamber cleaning apparatus of claim 1, further characterized by: the number of the cleaning gas supply mechanisms is two, and the cleaning gas supply mechanisms are symmetrically arranged above the cavity cover by taking the process gas supply mechanisms as the center.
6. The chamber cleaning apparatus of claim 2, further characterized by: the cleaning gas supply mechanisms comprise a gas connection part, a gate valve, a connecting pipe and a remote plasma source in sequence; the air distribution plate penetrates through the insulating plate through a connecting pipe and is connected with the air distribution plate in a sealing way; the cleaning gas is uniformly supplied to the interval space region through the gas distribution plate, and is uniformly supplied to all corners of the chamber through the spray plate.
7. The chamber cleaning apparatus of claim 2, further characterized by: the gas distribution plate comprises a through hole connected with the process gas inlet pipe, a cleaning gas interface which is symmetrically arranged by taking the process gas inlet pipe as a center and is coupled with the gas connecting part, a first gas distribution channel which is symmetrically arranged on the cleaning gas interface, and a second gas distribution channel and a cleaning gas outlet which are vertically and equidistantly arranged on two sides of the first gas distribution channel.
8. The chamber cleaning apparatus of claim 7, further characterized by: the first air dividing passage and the second air dividing passage are equal in width and arc-tangent; the cleaning gas outlets are distributed at equal intervals by taking the cleaning gas interface as the center.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321601595.7U CN220317951U (en) | 2023-06-21 | 2023-06-21 | Chamber belt cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321601595.7U CN220317951U (en) | 2023-06-21 | 2023-06-21 | Chamber belt cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220317951U true CN220317951U (en) | 2024-01-09 |
Family
ID=89416725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321601595.7U Active CN220317951U (en) | 2023-06-21 | 2023-06-21 | Chamber belt cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220317951U (en) |
-
2023
- 2023-06-21 CN CN202321601595.7U patent/CN220317951U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6240607B2 (en) | Gas delivery and distribution for homogeneous processes in a linear large area plasma reactor. | |
| JP5453543B2 (en) | Deposition box for silicon-based thin film solar cells | |
| KR20080105617A (en) | Chemical vapor deposition apparatus and plasma enhanced chemical vapor deposition apparatus | |
| KR101420709B1 (en) | Substrate supporting apparatus and substrate processing apparatus having the same | |
| KR20160057718A (en) | Substrate processing apparatus | |
| CN108149224A (en) | A kind of plasma-assisted atomic layer deposition apparatus | |
| KR101844325B1 (en) | Apparatus and method of processing substrate | |
| KR101373746B1 (en) | Apparatus for Processing Substrate Using Plasma | |
| CN220317951U (en) | Chamber belt cleaning device | |
| CN219470193U (en) | Box-type expandable stack PECVD system | |
| KR101351399B1 (en) | Apparatus and method of processing substrate | |
| KR20100052282A (en) | Vacuum processing apparatus | |
| KR100457455B1 (en) | Chemical Vapor Deposition Apparatus which deposition-speed control is possible | |
| CN114672768A (en) | Thin film deposition apparatus | |
| EP2290701B1 (en) | Apparatus for manufacturing thin film solar cell | |
| WO2021061123A1 (en) | Support bracket apparatus and methods for substrate processing | |
| CN113913790A (en) | Multi-section type electrode plate glow discharge device for flat plate type PECVD equipment | |
| WO2013102577A1 (en) | Heat transfer control in pecvd systems | |
| CN220012796U (en) | Film feeding chamber device of film plating equipment | |
| KR101994768B1 (en) | Substrate processing apparatus | |
| CN114875387B (en) | Film deposition device and gas distribution mechanism thereof | |
| KR20240035313A (en) | Apparatus for spraying gas, apparatus for processing substrate and method for depositing thin film | |
| WO2024054056A1 (en) | Gas spraying apparatus, substrate processing apparatus, and thin film deposition method | |
| KR101240538B1 (en) | Apparatus for Controlling Temperature of Substrate, Deposition Apparatus having the same and Method for Manufacturing Solar Cell using the same | |
| KR20240007595A (en) | Apparatus for spraying gas, apparatus for processing substrate and method for depositing thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |