KR101844325B1 - Apparatus and method of processing substrate - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method for preventing a plasma discharge from being transmitted to a substrate, thereby minimizing damage to the substrate and deterioration of film quality due to plasma discharge, A process chamber for providing a substrate; A substrate support disposed within the process chamber to support the substrate; A chamber lid provided on top of the process chamber to face the substrate support; And a first and a second gas buffer space provided on the lower surface of the chamber lid and spatially separated so that the first and second gases are separated and supplied to each other, Wherein the gas injection module comprises a ground electrode and a plasma electrode alternately arranged so as to be spaced apart from the upper surface of the substrate, wherein a distance between the substrate and the plasma electrode is different from a distance between the ground electrode Is greater than the distance between the plasma electrode and the plasma electrode.

Description

[0001] APPARATUS AND METHOD OF PROCESSING SUBSTRATE [0002]

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus and a substrate processing method capable of increasing the uniformity of deposition of a thin film deposited on a substrate.

Generally, in order to manufacture a solar cell, a semiconductor device, a flat panel display, etc., a predetermined thin film layer, a thin film circuit pattern, or an optical pattern must be formed on the surface of the substrate. For this purpose, A semiconductor manufacturing process such as a thin film deposition process, a photolithography process for selectively exposing a thin film using a photosensitive material, and an etching process for forming a pattern by selectively removing a thin film of an exposed portion are performed.

Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed for an optimum environment for the process, and recently, a substrate processing apparatus for performing a deposition or etching process using plasma is widely used.

Plasma-based substrate processing apparatuses include a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film using plasma, a plasma etching apparatus for patterning a thin film, and the like.

1 is a schematic view for explaining a conventional substrate processing apparatus.

Referring to FIG. 1, a general substrate processing apparatus includes a chamber 10, a plasma electrode 20, a susceptor 30, and a gas injection means 40.

The chamber 10 provides a reaction space for the substrate processing process. At this time, the bottom surface of one side of the chamber 10 communicates with the exhaust port 12 for exhausting the reaction space.

The plasma electrode 20 is installed on the upper part of the chamber 10 to seal the reaction space.

One side of the plasma electrode 20 is electrically connected to an RF (Radio Frequency) power source 24 through a matching member 22. At this time, the RF power supply 24 generates and supplies RF power to the plasma electrode 20.

Further, the central portion of the plasma electrode 20 communicates with the gas supply pipe 26 that supplies the process gas for the substrate processing process.

The matching member 22 is connected between the plasma electrode 20 and the RF power supply 24 to match the load impedance and the source impedance of the RF power supplied from the RF power supply 24 to the plasma electrode 20. [

The susceptor 30 is installed inside the chamber 10 to support a plurality of substrates S to be loaded from the outside. The susceptor 30 is electrically opposite to the plasma electrode 20 and is electrically grounded via a support shaft 32 that supports the susceptor 30. At this time, the support shaft 32 is surrounded by the support shaft 32 and the bellows 34 which seals the lower surface of the chamber 10.

The gas injection means 40 is installed below the plasma electrode 20 so as to face the susceptor 30. A gas buffer space 42 through which a process gas supplied from a gas supply pipe 26 passing through the plasma electrode 20 is supplied is formed between the gas injection means 40 and the plasma electrode 20. At this time, the process gas is mixed with a source gas and a reactive gas for forming a predetermined thin film on the substrate (S), and is supplied to the gas buffer space (42). The gas injection means 40 injects the process gas into the reaction space through a plurality of gas injection holes 44 communicated with the gas buffer space 42.

Such a general substrate processing apparatus loads the substrate S onto the susceptor 30 and then supplies RF power to the plasma electrode 20 while spraying a predetermined process gas into the reaction space of the chamber 10, A plasma discharge P is formed between the injecting means 40 and the susceptor 30 to deposit molecules of the process gas ionized by the plasma discharge P on the substrate S to form a predetermined To form a thin film.

However, in the conventional substrate processing apparatus, since the space in which the process gas is injected and the space in which the plasma discharge P are formed are the same, a plasma discharge P is formed on the substrate S, There is a problem that the substrate S is damaged by the film P and the film quality is deteriorated. In addition, in the conventional substrate processing apparatus, the process gas ionized by the plasma discharge (P) is deposited on the periphery of the gas injection hole (44) to form an abnormal thin film of the powder component, and the abnormal thin film induces particles .

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems and it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of preventing a plasma discharge from being transmitted to a substrate, .

According to an aspect of the present invention, there is provided a substrate processing apparatus comprising: a process chamber for providing a reaction space; A substrate support disposed within the process chamber to support the substrate; A chamber lid provided on top of the process chamber to face the substrate support; And a first and a second gas buffer space provided on the lower surface of the chamber lid and spatially separated so that the first and second gases are separated and supplied to each other, Wherein the gas injection module comprises a ground electrode and a plasma electrode alternately arranged so as to be spaced apart from the upper surface of the substrate, wherein a distance between the substrate and the plasma electrode is different from a distance between the ground electrode Is greater than the distance between the plasma electrode and the plasma electrode.

Wherein the gas injection module forms a plasma in a plasma discharge space between the ground electrode and the end of each of the plasma electrodes using a first gas supplied from the first gas buffer space, And a second gas is injected into the plasma discharge space to activate the plasma.

And the plasma electrode and the ground electrode are stepped to have a predetermined height difference.

Wherein the first gas supplied to the first gas buffer space is injected into a gas injection space provided between the ground electrode and the plasma electrode through the first gas injection member, And the gas is injected into the plasma discharge space through the second gas injection member formed inside the plasma electrode.

The first gas injection member has a first gas supply hole formed to have a first diameter and communicated with the first gas buffer space; And a first gas injection hole formed to have a second diameter smaller than the first diameter and communicated with the first gas supply hole and communicated with the gas injection space.

The gas injection member includes a second gas supply hole formed vertically inside the plasma electrode so as to communicate with the second gas buffer space; A second gas distribution hole formed in a lower portion of the plasma electrode along the longitudinal direction of the plasma electrode so as to communicate with the second gas supply hole; And a second gas injection hole formed at a lower portion of the plasma electrode to communicate with the second gas distribution hole and spraying the second gas toward the lower and both side portions.

The second gas injection hole is formed at the center of the lower surface of the plasma electrode so as to communicate with the second gas distribution hole and injects the second gas in a downward direction; And a pair of side holes formed on both side surfaces of the lower surface of the plasma electrode with respect to the center hole so as to communicate with the second gas distribution holes and spraying the second gas toward both side portions. do.

Wherein the gas injection module includes: a lower frame having the ground electrode and the plasma electrode protruded vertically alternately so as to be spaced apart from the upper surface of the substrate; An upper frame coupled to an upper surface of the lower frame to provide the first gas buffer space and coupled to a lower surface of the chamber lid such that the second gas buffer space is provided; A plasma power distributing member provided on a lower surface of the lower frame for distributing a plasma power and supplying the plasma power to the plasma electrode; A plurality of first gas injection holes formed in the lower frame to communicate with the first gas buffer space and injecting the first gas into a gas injection space between the ground electrode and the plasma electrode; And a plurality of second gas injection holes formed in each of the plurality of plasma electrodes to communicate with the second gas buffer space and to inject the second gas into the plasma discharge space.

And the plasma discharge space is between the ground electrode and the end of each of the plasma electrodes.

The gas injection module may further include a gas diffusion member installed on the lower surface of the upper frame for diffusing the first gas supplied to the first gas buffer space into the first gas buffer space. do.

According to another aspect of the present invention, there is provided a method for processing a substrate, the method comprising: placing at least one substrate on a substrate support disposed inside the process chamber; A plasma is generated in the plasma discharge space between the ground electrode and the plasma electrode alternately arranged so as to be spaced apart from the upper surface of the substrate by using the first gas supplied to the first gas buffer space of the gas injection module provided on the substrate supporting unit, ; And a second gas supplied to a second gas buffer space of the gas injection module spatially separated from the first gas buffer space is injected into the plasma discharge space to activate the second gas through the plasma, And a distance between the substrate and the plasma electrode is larger than a distance between the ground electrode and the plasma electrode.

And the plasma discharge space is between the ground electrode and the end of each of the plasma electrodes.

And the plasma discharge space is between the stepped ground electrode and the end of each of the plasma electrodes so as to have a predetermined height difference.

Wherein the first gas supplied to the first gas buffer space is injected into a gas injection space provided between the ground electrode and the plasma electrode and the second gas supplied to the second gas buffer space is injected into the inside of the plasma electrode And the second gas injection hole is formed in the plasma discharge space.

And the second gas is injected toward the lower and both sides of the plasma electrode by the second gas injection hole.

According to the solution of the above problems, the substrate processing apparatus and the substrate processing method according to the present invention have the following effects.

First, the first and second gas are separated through the spatially separated first and second gas buffer spaces, and the plasma is formed in the plasma discharge space spaced from the upper surface of the substrate, thereby preventing the plasma discharge from being transferred to the substrate It is possible to minimize the damage of the substrate and deterioration of the film quality due to the plasma discharge.

Second, since the first gas and the second gas are separated and injected, deposition of an abnormal thin film on the inner wall of the ground electrode and the plasma electrode can be minimized.

1 is a schematic view for explaining a conventional substrate processing apparatus.
2 is a view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
3 is an exploded perspective view schematically showing the chamber lid and the gas injection module shown in Fig.
4 is an exploded perspective view schematically showing the gas injection module shown in Fig.
5 is a cross-sectional view schematically showing a cross section of line II 'shown in FIG.
6 is a cross-sectional view schematically showing a cross section taken along a line II-II 'shown in FIG.
7 is a plan view conceptually showing a ground electrode and a plasma electrode alternately arranged on a substrate in the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 2 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention, FIG. 3 is an exploded perspective view schematically showing the chamber lid and the gas injection module shown in FIG. 2, 5 is a cross-sectional view schematically showing a cross section of a line II 'shown in FIG. 3, and FIG. 6 is a cross-sectional view schematically showing a cross section taken along a line II-II' shown in FIG. 3 .

2 to 6, a substrate processing apparatus according to an embodiment of the present invention includes a process chamber 110 for providing a reaction space, a substrate support 110 disposed inside the process chamber 110, A chamber lid 130 disposed on the upper portion of the process chamber 110 so as to face the substrate support 120 and a plasma electrode 130 disposed on the lower surface of the chamber lid 130 and not overlapping the upper surface of the substrate S, And a gas injection module 140 for forming a plasma P in a plasma discharge space PDS between the substrate PE and the ground electrode GE and activating the process gas PG to spray the substrate P onto the substrate S, do.

The process chamber 110 provides a reaction space for a substrate processing process (e.g., a thin film deposition process). The bottom surface and / or the side surface of the process chamber 110 may communicate with the exhaust pipe 112 for exhausting gas or the like in the reaction space.

The substrate support 120 is installed inside the process chamber 110 and supports a plurality of substrates S or one large-area substrate S. At this time, the area of each of the plurality of substrates S may have a quarter area on the one large area substrate S.

The substrate support 120 may be electrically floated or grounded. The substrate support 120 is supported by a support shaft 122 passing through the center bottom surface of the process chamber 110. At this time, the support shaft 122 exposed to the outside of the lower surface of the process chamber 110 is sealed by the bellows 124 installed on the lower surface of the process chamber 110.

The substrate support 120 may be elevated relative to the process conditions of the substrate processing process. In this case, the supporting shaft 122 of the substrate supporting part 120 is supported by the elevating shaft 126 of the elevating device 128. The upper surface of the substrate supporting portion 120 is positioned relatively close to the lower surface of the gas injection module 140 within the process condition range by the lifting and lowering of the lifting shaft 126 as the elevating device 128 is driven, Or relatively far away.

The chamber lid 130 is installed to cover the upper portion of the process chamber 110 to seal the reaction space. The chamber lid 130 supports the gas injection module 140. To this end, a module coupling groove is formed on the lower surface of the chamber lead 130, to which the gas injection module 140 is inserted.

First and second gas supply units 150 and 160 for supplying the process gas, that is, the first and second gases G1 and G2, separately to the gas injection module 140 are separately formed on the upper surface of the chamber lid 130. [ And a plasma power supply unit 170 for supplying a plasma power to the plasma electrode PE of the gas injection module 140 is installed.

The first gas supply unit 150 generates a first gas G1 for forming the plasma P in a space between the plasma electrode PE and the ground electrode GE and supplies the first gas G1 to the gas injection module 140. The second gas supply unit 160 generates a second gas G2 containing the material of the thin film to be deposited on the substrate S and supplies the second gas G2 to the gas injection module 140. Here, the first gas G1 may be a reaction gas that reacts with the second gas G2 to form the thin film, or may be a purge gas to purge (or clean) the second deposition gas G2, (Or cleaning gas). For example, when the silicon thin film is formed on the substrate S, the first gas G1 may be hydrogen (H2), and the second gas G2 may be silane (SiH4).

The plasma power supply unit 170 generates a plasma power for forming the plasma P in a space between the plasma electrode PE and the ground electrode GE and supplies the plasma power to the plasma electrode PE. At this time, the plasma power source may be a high frequency power or a radio frequency (RF) power, for example, LF (Low Frequency) power, MF (Middle Frequency), HF (High Frequency) power or VHF . At this time, the LF power has a frequency in the range of 3 kHz to 300 kHz, the MF power has a frequency in the range of 300 kHz to 3 MHz, the HF power has a frequency in the range of 3 MHz to 30 MHz, And may have a frequency in the range of 300 MHz.

The plasma power supply unit 170 may include an impedance matching circuit (not shown) for matching the source impedance of the plasma power source supplied to the plasma electrode PE with the load impedance. The impedance matching circuit may include at least two impedance elements (not shown) formed of at least one of a variable capacitor and a variable inductor.

The gas injection module 140 includes a ground electrode GE and a plasma electrode PE facing each other and inserted into a module coupling groove provided on the lower surface of the chamber lead 130. This gas injection module 140 forms a plasma P in the plasma discharge space PDS between the ends of each of the plasma electrode PE and the ground electrode GE to activate the process gas, that is, the second gas G2 And is sprayed onto the substrate S. That is, the gas injection module 140 applies a first gas G1 to the gas injection space provided between the ground electrode GE and the plasma electrode PE alternately arranged so as to be parallel to each other, A plasma P is formed in the plasma discharge space PDS by applying a plasma power and a second gas G2 is injected into the plasma discharge space PDS through the inside of the plasma electrode PE, The second gas G2 is activated and injected onto the substrate S. The gas injection module 140 includes a lower frame 210, a support frame 220, an upper frame 230, a plasma power distribution member 240, and a plurality of plasma electrodes PE.

The lower frame 210 includes a ground plate 211, a ground side wall 213, a plurality of ground electrodes GE, a plurality of electrode connecting members 215, a plurality of through holes 217, And an injection member 219.

The ground plate 211 is formed in a flat plate shape and is opposed to the substrate supporting portion 120.

The ground side wall 213 protrudes along the edge of the ground plate 211 to have a predetermined height. The ground side wall 213 is coupled to the lower edge of the upper frame 230 to separate the upper surface of the ground plate 211 and the lower surface of the upper frame 230 with a predetermined height difference. Accordingly, a first gas buffer space 142 is formed between the upper surface of the lower frame 210 and the lower surface of the upper frame 230.

The plurality of ground electrodes GE protrude from the lower surface of the ground plate 211 to have a first height and are disposed to be parallel to each other with a predetermined gap on the lower surface of the ground plate 211. Thus, a first gas injection space (GSS) is provided between a plurality of ground electrodes GE arranged side by side.

Each of the plurality of electrode connecting members 215 is provided on the upper surface of the ground plate 211 and is electrically connected to a plurality of plasma electrodes PE. At this time, each of the plurality of electrode connecting members 215 is installed on the upper surface of the ground plate 211 so as to be electrically insulated from the ground plate 211 by an insulator (not shown). Each of the plurality of electrode connecting members 215 is electrically connected to the plurality of plasma power supply members 240 to electrically connect the plurality of plasma power supply members 240 and the plurality of plasma electrodes PE.

Each of the plurality of through holes 217 is formed to penetrate through the ground plate 211 and overlapped with each of the plurality of plasma electrodes PE. At this time, three first through holes 217 may be formed at regular intervals on the ground plate 211 overlapping one plasma electrode (PE).

Each of the plurality of first gas injection members 219 is formed to penetrate the ground plate 211 and communicate with the first gas buffer space 142 and the first gas injection space GSS. Each of the plurality of first gas injection members 219 injects the first gas G1 flowing from the first gas buffer space 142 into the first gas injection space GSS at a predetermined pressure. To this end, each of the plurality of first gas injection members 219 includes a first gas inlet hole 219a and a first gas injection hole 219b as shown in FIG.

The first gas inlet hole 219a is formed to have a first diameter from the upper surface of the ground plate 211 so as to communicate with the first gas buffer space 142. [

The first gas injection hole 219b communicates with the first gas supply hole 219a to penetrate the ground plate 211 from the lower portion of the first gas injection hole 219b so as to communicate with the gas injection space GSS, do. At this time, the first gas injection hole 219b is formed to have a second diameter smaller than the first diameter of the first gas inlet hole 219a to inject the first gas G1 at a predetermined pressure. The height of the first gas inlet hole 219a may be higher than the height of the first gas injection hole 219b for smooth introduction of the first gas G1.

The first gas injection holes 219b are formed in two rows so as to be spaced apart from each other along the longitudinal direction of each of the gas injection spaces GSS.

5, the diameter of the first gas injection hole 219b is not limited to this, and the diameter of the first gas injection hole 219b is not limited to the diameter of the first gas injection hole 219b Can be increased toward the injection space (GSS). That is, when the first gas injection hole 219b is communicated with the first gas inlet hole 219a and communicates with the inlet having the second diameter and the gas injection space GSS, An outlet having a diameter, and an inclined surface between the inlet and the outlet.

2 and 5, the support frame 220 is mounted on the chamber wall of the process chamber 110 to support the lower inner wall of the module coupling groove of the chamber lid 130, And supports the edge portion. The support frame 240 is made of a metal material and electrically connects the lower frame 210 to the chamber lid 130 to electrically ground the lower frame 210.

The upper frame 230 includes an upper plate 231, an upper side wall 233, a plurality of power supply rods 235, a first tube coupling hole 237, and a plurality of tube insertion holes 239 .

The upper plate 231 is formed in a flat plate shape and is coupled to the upper surface of the lower frame 210. Accordingly, the first gas buffer space 142 is provided between the lower surface of the upper plate 231 and the upper surface of the lower frame 210.

The upper side wall 233 protrudes along the edge of the upper plate 231 to have a predetermined height. The upper sidewall 233 is coupled to the lower edge of the chamber lid 130 to separate the upper surface of the upper plate 233 and the lower surface of the chamber lid 130 by a predetermined height difference. Accordingly, a second gas buffer space 144 is formed between the upper surface of the upper frame 230 and the lower surface of the chamber lid 130.

The plurality of power supply rods 235 are formed so as to be surrounded by the insulator and are electrically connected to the plasma power supply member 240 by being installed to penetrate the upper plate 231. The plurality of power supply rods 235 are inserted into the bar through holes 131 formed in the chamber lid 130 and are electrically connected to the plasma power supply unit 170 described above. The plurality of power supply rods 235 transfer the plasma power supplied from the plasma power supply unit 170 to the plasma power supply member 240.

A tube coupling hole 237 is formed through the upper plate 132 to communicate with the first gas buffer space 142. A first gas supply pipe 238 connected to the first gas supply unit 150 and passing through the chamber lid 130 is coupled to the pipe connection hole 237. The first gas G1 is supplied from the first gas supply unit 150 through the first gas supply pipe 238 to the pipe coupling hole 237. [

The first gas G1 supplied to the tube coupling hole 237 is supplied to the first gas buffer space 142 and diffused in the first gas buffer space 142 to thereby prevent the lower frame 210, (GSS) through a plurality of first gas injection members 219 formed in the gas injection space GSS.

The gas injection module 140 includes a gas diffusion member 250 for diffusing the first gas G1 supplied to the first gas buffer space 142 into the entire interior region of the first gas buffer space 142, May be further included.

5, the gas diffusion member 250 is installed on the lower surface of the upper frame 230 so as to overlap the lower portion of the pipe coupling hole 237, 1 gas (G1) to the entire inner region of the first gas buffer space (142). The lower surface of the upper frame 230, which overlaps with the gas diffusion member 250, may be recessed.

Each of the plurality of tube insertion holes 239 is formed at regular intervals to penetrate the upper plate 231 and communicate with the second gas buffer space 144. Each of the plurality of pipe fitting holes 237 is overlapped with each of the plurality of pipe through holes 217 formed in the lower frame 210.

A second gas G2 is supplied from the second gas supply unit 160 to the second gas buffer space 144 through a plurality of second gas supply lines 133 formed in the chamber lid 130. [

The plasma power supply member 240 is inserted into the lower surface of the upper frame 230 and is electrically connected to the plurality of power supply rods 235 to supply plasma power delivered from the plurality of power supply rods 235 to a plurality of plasma To the electrode (PE). To this end, the plasma power distributing member 240 is composed of a line insulating member 242, and a power supply line 244.

The line insulating member 242 is made of an insulating material to electrically isolate the power supply line 244. That is, the line insulating member 242 electrically insulates the lower frame 210 from the power supply line 244.

The power supply line 244 is provided on the line insulating member 242 and is electrically connected to each of the plurality of power supply rods 235. The power supply line 244 is electrically connected to each of the plurality of electrode connecting members 215 passing through the line insulating member 242. The power supply line 244 transfers the plasma power supplied from each of the plurality of power supply rods 235 to each of the plurality of electrode connection members 215.

The power supply line 244 allows a uniform plasma power to be supplied to each plasma electrode PE irrespective of the position of the plurality of plasma electrodes PE. For this, the power supply line 244 may have a single-layer or multi-layer structure such that the line resistance according to the distance between each of the plurality of power supply rods 235 and each plasma electrode PE is compensated.

Each of the plurality of plasma electrodes PE is inserted into the gas injection space GSS so as to be spaced apart from the ground electrode GE of the lower frame 210 by a predetermined distance. Each of the plurality of plasma electrodes PE forms plasma P in the plasma discharge space PDS according to the plasma power supplied from the plasma power supply unit 170 and generates plasma P in the second gas buffer space 144, The gas G2 is injected into the plasma discharge space PDS to activate the second gas G2. To this end, each of the plurality of plasma electrodes PE includes an electrode frame 251, a plurality of second gas supply pipes 253, a second gas injection member 255, And a plurality of power connection portions 257.

The electrode frame 251 is formed so as to have a rectangular cross section having a predetermined length and inserted and disposed in the gas injection space GSS provided by the ground electrode GE. The lower surface of the electrode frame 251 is formed to have a semicircular cross section and is separated from the upper surface of the substrate supporting portion 120 by a predetermined distance Respectively. The electrode frame 251 is made of a metal material and generates a plasma P in a plasma discharge space PDS according to a plasma power source supplied from the plasma power supply unit 170.

The plasma discharge space (PDS) according to the present invention is formed not between the plasma electrode and the substrate but between the plasma electrode (PE) and the ground electrode (GE) facing each other. Therefore, according to the present invention, since the plasma discharge space PDS does not overlap with the thin film formed on the substrate S and / or the substrate S supported by the substrate supporter 120, The problem that the film S is damaged and the film quality deposited on the substrate S falls can be solved.

2, the distance d between the plasma electrode EP and the substrate S is greater than the distance between the plasma electrode PE and the ground electrode GE. In particular, as shown in the enlarged view of FIG. 2, ) Can be made larger, thereby solving the problem caused by the plasma discharge. If the distance d between the plasma electrode PE and the substrate S is made smaller than the distance between the plasma electrode PE and the ground electrode GE, A plasma discharge may be generated between the substrate supporting portions 120, and the substrate S may be adversely affected by the plasma discharge.

According to an embodiment of the present invention, since the plasma electrode PE and the ground electrode GE protrude perpendicularly to the upper surface of the substrate S, positive ions or electrons generated by the plasma discharge (PE) or the ground electrode (GE) in the direction parallel to the upper surface of the substrate S without moving to the (S) plane of the substrate S, and thus the influence of the substrate S by the plasma discharge can be minimized have.

The plasma electrode PE, that is, the lower surface of the electrode frame 251 and the ground electrode GE are arranged so as to have a predetermined height difference h. That is, the lower surface of the electrode frame 251 protrudes toward the substrate S so as to have a predetermined height h from the lower surface of the ground electrode GE. By forming the lower surface of the electrode frame 251 and the ground electrode GE so as to be stepped, a plasma discharge space PDS is not formed between the inner surfaces of the electrode frame 251 and the ground electrode GE, , A plasma discharge space (PDS) may be formed between the end portions of the stepped electrode frame 251 and the ground electrode GE. This makes it possible to prevent the abnormal thin film from being deposited on the inner surfaces of the electrode frame 251 and the ground electrode GE due to the plasma formed between the inner surfaces of the electrode frame 251 and the ground electrode GE have.

The plurality of second gas supply pipes 253 are vertically formed on the upper surface of the electrode frame 251 and inserted into the through holes 217 formed in the lower frame 210 so that the electrode frame 251 is inserted into the lower frame 210, As shown in FIG. At this time, three second gas supply pipes 253 having a predetermined gap may be formed on the upper surface of the electrode frame 251.

Since each of the plurality of second gas supply pipes 253 is formed in the electrode frame 251, the plurality of second gas supply pipes 253 are electrically connected to the electrode frame 251. In order to electrically insulate the lower frame 210 and the second gas supply pipe 253 from the ground state, each of the plurality of second gas supply pipes 253 is installed on the lower surface of the lower frame 210 And is electrically insulated from the lower frame 210 by the electrode insulating member 260 by being inserted into the through hole 217 through the electrode insulating member 260.

Each of the plurality of second gas supply pipes 253 communicates with the second gas buffer space 144 through a second gas transfer pipe 270 inserted into the pipe through hole 217.

The second gas transfer tube 270 is formed to be surrounded by an insulator and inserted into the tube through hole 217 vertically so as to be coupled to the second gas supply tube 253, Inserted into the tube insertion hole 239 formed in the upper frame 230, and communicated with the second gas buffer space 144. The second gas supply pipe 253 communicates with the second gas buffer space 144 through the second gas transfer pipe 270 so that the second gas supply pipe 160 is connected to the second gas buffer space 144 Is supplied to the inside of the electrode frame 251 through the second gas transfer pipe 270 and the second gas supply pipe 253.

The second gas supply pipe 253 and the second gas transfer pipe 270 may be sealed by a sealing member such as an O-ring or the like, The space between the insertion holes 239 can be sealed by the sealing member.

The second gas injection member 255 injects the second gas G2 formed in the electrode frame 251 and supplied through the second gas supply pipe 253 into the plasma discharge space PDS. To this end, the second gas injection member 255 includes a plurality of second gas supply holes 255a, a second gas distribution hole 255b, and a plurality of second gas injection holes 255c.

Each of the plurality of second gas supply holes 255a is vertically formed in the electrode frame 251 so as to communicate with each of the plurality of second gas supply pipes 253. Each of the plurality of second gas supply holes 255a communicates with the second gas buffer space 144 through the second gas supply pipe 253 and the second gas transfer pipe 270, And receives the second gas (G2) from the space (144).

The second gas distribution hole 255b is formed in the lower surface of the electrode frame 251 along the longitudinal direction of the electrode frame 251 and communicates with each of the plurality of second gas supply holes 255a. A second gas G2 supplied through the second gas supply hole 255a is supplied to the second gas distribution hole 255b.

Each of the plurality of second gas injection holes 255c is formed at regular intervals through the lower surface of the electrode frame 251 to communicate with the second gas distribution hole 255b. The plurality of second gas injection holes 255c inject the second gas G2 distributed by the second gas distribution hole 255b in the lower and both side directions. To this end, the second gas injection hole 255c includes a center hole CH and a pair of side holes SH1 and SH2.

The center hole CH is communicated with the second gas distribution hole 255b through the center of the lower surface of the electrode frame 251 so that the second gas G2, which is supplied through the second gas distribution hole 255b, And is sprayed in a downward direction perpendicular to the support portion 120. The second gas G2 injected through the center hole CH is formed in the plasma discharge space PDS by being sprayed to a part of the plasma discharge space PDS formed below the electrode frame 251 Is activated by the plasma (P) and is sprayed onto the substrate (S).

Each of the pair of side holes SH1 and SH2 is communicated with the second gas distribution hole 255b through the lower both sides of the electrode frame 251 with respect to the center hole CH, And the second gas G2 supplied through the second electrode 255b toward the end of the adjacent ground electrode GE. At this time, each of the pair of side holes SH1 and SH2 is formed to face the lower surface of the ground electrode GE.

The second gas G2 injected through each of the pair of side holes SH1 and SH2 is injected toward the lower surface of the ground electrode GE so that the end of each of the electrode frame 251 and the ground electrode GE, And is sprayed onto the substrate S by a plasma P formed in a plasma discharge space (PDS) The first gas G1 injected into the gas injection space between the ground electrode GE and the plasma electrode PE is prevented from stagnating or swirling at the lower surface and the lower surface of the ground electrode GE, It is possible to prevent an abnormal thin film from being deposited in the lower region of the substrate.

Each of the plurality of power connection portions 257 is vertically formed on the upper surface of the electrode frame 251 and inserted into and electrically connected to the electrode connection member 215 formed on the lower frame 210. Each of the plurality of power connection portions 257 supports the electrode frame 251 and supplies the plasma power to the electrode frame 251. 6, each of the plurality of power connection portions 257 is inserted into and coupled to the electrode connection member 215 formed on the lower frame 210, and is electrically connected to the plasma power distribution member 251 through the electrode connection member 215, The plasma power is supplied from the plasma power distributing member 240 to the electrode frame 251 by being electrically connected to the electrode 240.

The electrode connection member 215 and the lower frame 210 may be sealed by a sealing member such as an O-ring or the like between each of the plurality of power connection portions 257 and the electrode connection member 215, Can be sealed by the sealing member.

The gas injection module 140 as described above applies a plasma power to the plasma electrode PE while spraying the first gas G1 into the gas injection space provided between the ground electrode GE and the plasma electrode PE The plasma P is formed in the plasma discharge space PDS between the end portions of the ground electrode GE and the plasma electrode PE and the plasma P is discharged through the second gas spray hole 255 of the plasma electrode PE A second gas G2 activated by the plasma P of the plasma discharge space PDS is injected onto the substrate S by injecting the second gas G2 into the discharge space PDS. Accordingly, a predetermined thin film is deposited on the substrate S by the activated second gas G2. 7, since the ground electrode GE and the plasma electrodes PE are alternately arranged in parallel, the activated second gas G2 is formed on the upper surface of the substrate S, So that a thin film having a uniform thickness is formed over the entire area of the upper surface of the substrate S.

The substrate processing method using the substrate processing apparatus according to the embodiment of the present invention will be described as follows.

First, a plurality of substrates S or one large-area substrate S is loaded on the substrate support 120 to be placed thereon.

The first gas supply unit 150 supplies the first gas G1 to the first gas buffer space 142 of the gas injection module 140 to supply the first gas G1 to the first gas buffer space 142 through the first gas supply unit 150, The gas G1 is injected through the first gas injection hole 219 of the lower frame 210 into the gas injection space between the ground electrode GE and the plasma electrode PE. The plasma power is supplied to the plasma electrode PE through the plasma power supply unit 170 while the first gas G1 is being sprayed. Thereby, an electric field is generated in the plasma discharge space (PDS) between the end portions of the ground electrode GE and the plasma electrode PE by the ground electrode GE in a ground state and the plasma electrode PE supplied with a plasma power And a plasma (P) is formed in the plasma discharge space (PDS).

The second gas G2 is supplied to the second gas buffer space 144 through the second gas supply unit 160 and the second gas buffer space 144 is supplied through the second gas buffer space 144 to the plasma electrode The second gas G2 is injected into the plasma discharge space PDS through the second gas injection hole 255 by supplying the second gas G2 to the second gas injection hole 255 of the PE. The second gas G2 is activated by the plasma P formed in the plasma discharge space PD and is sprayed on the substrate S to be deposited on the upper surface of the substrate S to form a predetermined thin film do.

As described above, in the substrate processing apparatus and the substrate processing method according to the embodiment of the present invention, the first and second gas buffer spaces spatially separated from each other are provided in the gas injection module 140, The plasma P is formed in the plasma discharge space PDS spaced from the upper surface of the substrate S by using the first gas G1 and the second gas G supplied to the second gas buffer space is plasma It is possible to form a thin film having a uniform thickness over the entire area of the upper surface of the substrate S by spraying the gas G2 on the substrate S by activating the second gas G2 in accordance with the plasma P by spraying onto the discharge space PDS . Accordingly, the present invention can prevent the plasma discharge from being transferred to the substrate, minimizing the damage of the substrate and deterioration of the film quality due to the plasma discharge, and the separation of the first and second gases (G1, G2) Deposition of an abnormal thin film on the inner wall of the plasma electrode can be minimized.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

110: process chamber 120: substrate support
130: chamber lead 140: gas injection module
150: first gas supply unit 160: second gas supply unit
170: plasma power supply unit 210:
220: support frame 230: upper frame
GE: Ground electrode PE: Plasma electrode

Claims (15)

A process chamber providing a reaction space;
A substrate support disposed within the process chamber to support the substrate;
A chamber lid provided on top of the process chamber to face the substrate support; And
First and second gas buffer spaces provided on the lower surface of the chamber lid and spatially separated so that the first and second gases are supplied separately and a first and a second gas buffer space spaced apart from the upper surface of the substrate, And a gas injection module that includes a plasma electrode and activates the second gas to inject the gas onto the substrate,
Wherein the ground electrode protrudes from the chamber lead toward the substrate supporting portion and is provided with a gas injection space between a plurality of the ground electrodes,
A plurality of the plasma electrodes are respectively inserted into the gas injection space at predetermined intervals from the ground electrode,
Wherein the distance between the substrate and the plasma electrode is greater than the distance between the ground electrode and the plasma electrode. The method according to claim 1,
Wherein the gas injection module forms a plasma in a plasma discharge space between the ground electrode and the end of each of the plasma electrodes using a first gas supplied from the first gas buffer space, And a second gas is injected into the plasma discharge space to activate the substrate. [Claim 3 is abandoned upon payment of the registration fee.] The method according to claim 1,
Wherein the plasma electrode and the ground electrode are stepped to have a predetermined height difference. 3. The method of claim 2,
The first gas supplied to the first gas buffer space is injected through the first gas injection member into the gas injection space provided between the ground electrode and the plasma electrode,
Wherein the second gas supplied to the second gas buffer space is injected into the plasma discharge space through a second gas injection member formed inside the plasma electrode. [Claim 5 is abandoned upon payment of registration fee.] 5. The method of claim 4,
Wherein the first gas injection member comprises:
A first gas supply hole formed to have a first diameter and communicated with the first gas buffer space; And
And a first gas injection hole formed to have a second diameter smaller than the first diameter and communicated with the first gas supply hole and communicated with the gas injection space. [Claim 6 is abandoned due to the registration fee.] 5. The method of claim 4,
Wherein the gas injection member
A second gas supply hole vertically formed in the plasma electrode to communicate with the second gas buffer space;
A second gas distribution hole formed in a lower portion of the plasma electrode along the longitudinal direction of the plasma electrode so as to communicate with the second gas supply hole; And
And a second gas injection hole formed at a lower portion of the plasma electrode so as to communicate with the second gas distribution hole and spraying the second gas toward the lower and both side portions. [7] has been abandoned due to the registration fee. The method according to claim 6,
Wherein the second gas injection hole
A center hole formed at a center of a lower surface of the plasma electrode so as to communicate with the second gas distribution hole and spraying the second gas in a downward direction; And
And a pair of side holes formed on both side surfaces of the lower surface of the plasma electrode with respect to the center hole so as to communicate with the second gas distribution holes and spraying the second gas toward both side portions. / RTI > 3. The method of claim 2,
The gas injection module includes:
A lower frame which is alternately and vertically protruded so that the ground electrode and the plasma electrode are parallel to each other while being spaced apart from the upper surface of the substrate;
An upper frame coupled to an upper surface of the lower frame to provide the first gas buffer space and coupled to a lower surface of the chamber lid such that the second gas buffer space is provided;
A plasma power distributing member provided on a lower surface of the lower frame for distributing a plasma power and supplying the plasma power to the plasma electrode;
A plurality of first gas injection holes formed in the lower frame to communicate with the first gas buffer space and injecting the first gas into a gas injection space between the ground electrode and the plasma electrode; And
And a plurality of second gas injection holes formed in each of the plurality of plasma electrodes so as to communicate with the second gas buffer space to inject the second gas into the plasma discharge space. Device. [Claim 9 is abandoned upon payment of registration fee.] 9. The method of claim 8,
Wherein the plasma discharge space is between the ground electrode and the end of each of the plasma electrodes. [Claim 10 is abandoned upon payment of the registration fee.] 9. The method of claim 8,
The gas injection module may further include a gas diffusion member installed on the lower surface of the upper frame for diffusing the first gas supplied to the first gas buffer space into the first gas buffer space. . Placing at least one substrate on a substrate support disposed within the process chamber;
A plasma is generated in the plasma discharge space between the ground electrode and the plasma electrode alternately arranged so as to be spaced apart from the upper surface of the substrate by using the first gas supplied to the first gas buffer space of the gas injection module provided on the substrate supporting unit, ; And
A second gas supplied to the second gas buffer space of the gas injection module spatially separated from the first gas buffer space is injected into the plasma discharge space to activate the second gas through the plasma, And depositing a material on the substrate,
Wherein the ground electrode is protruded from the chamber lead toward the substrate support portion and is provided with a gas injection space between a plurality of the ground electrodes and the plurality of plasma electrodes are inserted into the gas injection space at a predetermined interval from the ground electrode, Wherein the distance between the substrate and the plasma electrode is greater than the distance between the ground electrode and the plasma electrode. 12. The method of claim 11,
Wherein the plasma discharge space is between the ground electrode and the end of each of the plasma electrodes. [13] has been abandoned due to the registration fee. 12. The method of claim 11,
Wherein the plasma discharge space is between the stepped ground electrode and the end of each of the plasma electrodes to have a predetermined height difference. 12. The method of claim 11,
The first gas supplied to the first gas buffer space is injected into a gas injection space provided between the ground electrode and the plasma electrode,
Wherein the second gas supplied to the second gas buffer space is injected into the plasma discharge space through a second gas injection hole formed in the inside of the plasma electrode. [Claim 15 is abandoned upon payment of registration fee] 15. The method of claim 14,
And the second gas is injected toward the lower and both sides of the plasma electrode by the second gas injection hole.

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