KR20050116230A - Plasma enhanced chemical vapor deposition apparutus - Google Patents

Abstract

It is an object of the present invention to provide a showerhead extension and a PECVD apparatus including the same that can improve supply and demand instability and increase manufacturing costs as the substrate for thin film deposition becomes large.

The present invention includes: a chamber lead and a chamber body positioned at upper and lower portions, respectively, to form a reaction region in a vacuum state which is blocked from an outer region; A susceptor installed at the chamber body and having a substrate mounted thereon; A shower head installed inside the chamber lid, spaced apart from the susceptor, uniformly injecting a reaction gas onto the substrate, and connected to an external power source to form a plasma with the susceptor; Provided is a plasma chemical vapor deposition apparatus positioned between the showerhead and the chamber lid, insulated the showerhead and the chamber lid made of ceramic, and comprising a showerhead extension comprising a plurality of dividers.

The present invention can improve the supply and demand problems according to the limitations of the ceramic processing by forming the showerhead extension portion in a divided structure, and in the case of a defect in the part can replace only the divided part that is defective can reduce the manufacturing cost It has an effect.

Description

Plasma Enhanced Chemical Vapor Deposition Apparutus

The present invention relates to a plasma chemical vapor deposition apparatus, and more particularly, to a plasma chemical vapor deposition apparatus including a showerhead extension.

In general, the plasma chemical vapor deposition apparatus is used to deposit a thin film on a substrate of a liquid crystal display device or a semiconductor device.

The liquid crystal display device refers to a non-light emitting device in which a liquid crystal is injected between an array substrate and a color filter substrate to obtain an image effect by using the characteristics thereof.

The array substrate and the color filter substrate are each manufactured through a plurality of deposition, patterning, and etching processes of a thin film on a transparent substrate made of a material such as glass, and the reaction and source materials are gaseous in a downstream manner from the upper part of the process chamber. In the case of the deposition or etching process, the showerhead assembly including a showerhead having a plurality of through-holes formed on the substrate may be used to uniformly distribute the reaction and source gas on the substrate. In particular, in recent years, a plasma enhanced chemical vapor deposition method (PECVD: Plasma Enhanced) is used to induce a chemical reaction between reaction gases in a state in which a reaction gas is excited in a plasma state by using high voltage energy outside the process chamber. Chemical Vapor Deposition) is widely used. The substrate deposition apparatus (PECVD apparatus) using the PECVD method is as follows.

In the PECVD apparatus using the PECVD method, a thin film deposition process is performed through a process chamber including an upper chamber lid and a lower chamber body.

Through the shower head formed inside the chamber lid, the reaction gas is uniformly sprayed onto the substrate seated on the upper surface of the susceptor formed in the chamber body, and a thin film is deposited. The reaction gas is a backing plate and a showerhead. The thin film deposition process is performed by being activated by radio frequency (RF) energy supplied by an upper electrode consisting of an upper electrode and a lower electrode consisting of a susceptor.

As described above, the shower head is supplied with RF power and functions as an upper electrode. The shower head is made of ceramic and extends from a ceramic head to prevent leakage of insulating gas and reactant gas. An additional intervening between the showerhead and the chamber lid is provided.

1 is a cross-sectional view showing a portion including a showerhead extension in a conventional PECVD apparatus.

As shown, the chamber lid 20 and the chamber body 14 are positioned at the upper and lower portions, respectively, and the backing plate 34 and the shower head 30 are installed inside the chamber lid so as to traverse the interior thereof. .

The reaction gas is supplied from the external gas supply source (not shown) to the internal space A between the backing plate and the showerhead through the center of the backing plate 34 via a gas line (not shown). The reaction gas supplied to the internal space A is uniformly injected into the reaction space S through the injection holes 32 formed in the shower head 30.

The showerhead extension 46 insulates the showerhead 30 and the chamber lid 20, and prevents the reaction gas located in the reaction space S from leaking between the showerhead 30 and the chamber lid 20. Done.

2 is a plan view illustrating a showerhead extension in a conventional PECVD apparatus.

As shown, the conventional showerhead extension 46 has a rectangular frame shape of which the inside is opened up and down. Showerhead extension 46 is integrally made of ceramic material for insulation.

Currently, thin film deposition substrates including substrates for liquid crystal display devices are enlarged and manufactured in size from 5th generation to 6th generation. Accordingly, showerheads and showerhead extensions, which are components of the PECVD apparatus, must also be large in area. The long side (LL) and short side (SL) of the showerhead extension in the case of the fifth generation thin film deposition substrate have a length of 2 m (meter) or less, and the long side (LL) and the short side of the showerhead extension in the case of the sixth generation substrate. SL) has a length of 2 m or more.

However, at present, the domestic processing limit of ceramic is less than 2m, and if it exceeds 2m, it is difficult to process ceramics, and the situation is required to import from abroad.

Therefore, as the substrate for thin film deposition becomes larger, the supply and demand of the integrated showerhead extension provided in the PECVD apparatus becomes unstable.

In addition, when a defect occurs in the integrated showerhead extension, the entire showerhead extension needs to be replaced, resulting in an increase in manufacturing cost.

SUMMARY OF THE INVENTION An object of the present invention for solving the above problems is to provide a showerhead extension and a PECVD apparatus including the same that can improve supply and demand instability and increase manufacturing costs as the substrate for thin film deposition becomes large. .

In order to achieve the object as described above, the present invention, the chamber lid and the chamber body which is located at the top and bottom, respectively, forming a reaction zone in a vacuum state that is isolated from the outer region; A susceptor installed at the chamber body and having a substrate mounted thereon; A shower head installed inside the chamber lid, spaced apart from the susceptor, uniformly injecting a reaction gas onto the substrate, and connected to an external power source to form a plasma with the susceptor; Provided is a plasma enhanced chemical vapor deposition apparatus positioned between the showerhead and the chamber lid, comprising a showerhead extension made of ceramic to insulate the showerhead and the chamber lid and comprising a plurality of splittable sections.

Here, the contact surfaces of the two divided portions coupled to each other among the plurality of divided portions may overlap in plan. The contact surface of the two divided parts coupled to each other may be one selected from the inclined surface and the tomographic surface corresponding to each other.

The showerhead extension may be coupled to a selected one of the showerhead and the chamber lid through a fastening means. It may further include a shielding means made of an insulating material covering the fastening means.

In another aspect, the present invention provides a showerhead extension that insulates a showerhead and a chamber lid of a plasma chemical vapor deposition apparatus, the showerhead extension comprising a plurality of dividers made of ceramic.

Here, the contact surfaces of the two divided portions coupled to each other among the plurality of divided portions may overlap in plan. The contact surface of the two divided parts coupled to each other may be one selected from the inclined surface and the tomographic surface corresponding to each other. The contact surfaces of the two division parts joined to each other may be spaced apart from each other.

In addition, the showerhead extension may have a long side and a short side of 2 m or more.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

3 is a schematic cross-sectional view of a plasma enhanced chemical vapor deposition (PECVD) apparatus according to an embodiment of the present invention.

In the PECVD apparatus according to the embodiment of the present invention, a substantial thin film deposition process is performed in the process chamber 100 which is blocked from the external region to form the reaction region S in a vacuum state. The process chamber 100 is divided into a lower chamber body 114 and an upper chamber lid 122, and a sealing member 116 such as an o-ring is interposed therebetween to cover an inner region of the process chamber 100. Seal from outside area.

The upper part is isolated from the outside by the chamber lid 122. The backing plate 134 and the shower head 130 are installed inside the chamber lid 122 so as to traverse the interior thereof.

The reaction gas is injected into the lower portion of the backing plate 134 by a gas inlet pipe 170 passing through the center of the backing plate 134 via a gas line (not shown) from an external gas supply source (not shown).

The reaction gas injected as described above is diffused into the inner space A between the backing plate 134 and the showerhead 130 by a baffle (not shown) as a diffusion plate under the backing plate 134. The diffused reaction gas is uniformly injected into the reaction space S through the injection holes 132 formed in the shower head 130, and then proceeds to the upper surface of the substrate T seated on the upper surface of the susceptor 160.

In particular, an RF power source 180 for supplying energy required to excite the injected reaction gas is connected to the backing plate 134 and the shower head 130 to plasmalize the reaction gas injected through the shower head 130. As a result, a thin film is formed on the substrate T. Thus, the backing plate 134 and the showerhead 130 function as upper electrodes.

Both sides of the chamber body 114 are coupled through the chamber lid 122 and the sealing member 116, and the inside of the chamber body 114 is spaced apart from the shower head 130 by a predetermined distance, and the substrate T on the upper surface thereof. The seated susceptor 160 is installed. The heater 162 is embedded in the susceptor 160 to raise the substrate T seated on the upper part of the susceptor 160 to a temperature suitable for deposition in the thin film deposition process. In addition, the susceptor 160 is electrically grounded to function as a lower electrode.

Lifting means (not shown) capable of moving the susceptor 160 up and down is connected to the lower end of the susceptor 160 as the substrate T is loaded or unloaded into the process chamber 100.

In addition, the upper surface of the susceptor 160 and the substrate T to adhere the substrate T to the susceptor 160 without the process material being deposited on the edge of the substrate T and the sidewall of the process chamber 100. An edge frame 164 is provided on the side surface to cover the edge of the substrate T.

An exhaust port 152 is provided below the chamber body 114 so that the reaction gas remaining in the process chamber 100 is discharged to the outside after the deposition reaction is completed.

Meanwhile, in order to insulate the shower head 130 and the chamber lid 122 and to prevent the reaction gas located in the reaction space S from leaking between the shower head 130 and the chamber lid 122, the shower head ( A showerhead extension 146 is located between 130 and chamber lid 122.

The showerhead 130 is connected to the backing plate 134 to function as an upper electrode, and a current may leak into the chamber lid 122 made of a metal material. Therefore, it is located between the chamber lead 122 and the shower head 130 to prevent leakage of current.

The showerhead extension 146 is made of ceramic that is an insulator to insulate and prevent leakage of reactive gases.

In order to more reliably insulate the shower head 130 and the chamber lid 122 and prevent leakage of the reactive gas, a plurality of insulating members 144 and 148 made of ceramic, Teflon, and the like are positioned.

Hereinafter, the showerhead extension 146 according to the embodiment of the present invention will be described in detail.

4 is a plan view illustrating a showerhead extension according to an exemplary embodiment of the present invention.

As shown, the showerhead extension 146 according to the embodiment of the present invention has a rectangular frame shape having an inside opening up and down, and the first, second, third, and fourth divisions 146a, 146b, 146c, and 146d. It consists of a split structure that can be separated.

The first, second, third, and fourth division parts 146a, 146b, 146c, and 146d have a structure in which two long sides LL and short sides SL of the showerhead extension 146 are divided into two. That is, the first, second, third, and fourth division parts 146a, 146b, 146c, and 146d are divided into one corner C (coner) and one corner C of the four corners of the showerhead extension 146. It consists of a long side (LL) and a short side (SL).

The showerhead extension 146 is made of ceramic, which is an insulating material. When the long side LL and the short side SL of the showerhead extension 146 are 2 m or more due to the processing limitations of the ceramic, such division is performed. The structure can be effectively applied to the showerhead extension 146. Of course, even when the long side LL and the short side SL are 2 m or less, the showerhead extension 146 may have a split structure.

Thus, when manufacturing the showerhead extension part 146 in a divided structure, the difficulty in ceramic processing can be improved, and the defect which generate | occur | produced when a defect generate | occur | produces in part of the showerhead extension part 146 is made. It is possible to reduce the manufacturing cost by replacing only the installment.

5 and 6 are cross-sectional views showing the engaging portions between the divided portions of the showerhead extension according to the embodiment of the present invention, respectively, along the cut line " D-D "

As shown in the drawing, the contact surfaces 150a and 150b of the first and second divisions are formed as inclined or tomographic surfaces corresponding to each other, so that the contact surfaces of the first and second divisions 146a and 146b overlap in a planar manner. This structure is similarly applied to the engaging portion between the second and third divisions 146b and 146c, the third and fourth divisions 146c and 146d, and the fourth and first divisions 146d and 146a.

Since the showerhead extension 146 must have insulation and reactive gas leakage preventing functions, the coupling portions between the divided portions are designed to overlap, thereby increasing the insulation and reactive gas leakage preventing effects.

On the other hand, since the showerhead extension 146 is expanded by the heat generated when the thin film deposition process is in progress, the free space E1 is provided in the coupling portion between the divisions in consideration of thermal expansion. Thus, in the coupling portion, the contact surfaces of the divisions are spaced apart, and in order to prevent leakage of the reaction gas through the spaced portions, the coupling portions between the divisions may be sealed by a sealing means made of an insulating material.

7 is a cross-sectional view illustrating a coupling structure of a shower head extension and a chamber lid according to an exemplary embodiment of the present invention.

As shown, the showerhead extension 146 is fastened using the chamber lid 122 and fastening means 156, such as a bolt. The fastening means 156 penetrates the fastening groove 157 formed in the shower head extension 146. The free space E2 is left.

On the other hand, when the metal material is used as the fastening means 156, such as bolts, the fastening means 156 is exposed to the plasma can cause arcing (arcing), it is sealed to an insulating material such as ceramic to prevent this The fastening means 156 is covered with the means 155 to shield the fastening means 156 from the plasma. On the other hand, the sealing means 155 also serves to seal the free space between the fastening groove 157 and the fastening means 156.

The showerhead extension 146 coupled to the chamber lid 122 in the above structure may be coupled to the showerhead 130 (see FIG. 3) in the same coupling structure.

As described above, the present invention can improve the supply and demand problems according to the limitations of the ceramic processing by forming the showerhead extension portion in a divided structure, and in the case where a defect occurs in part, only the defective part having a defect can be replaced and manufactured. The cost can be reduced.

The present invention can also be applied to a showerhead extension of a size that can be manufactured in one piece in Korea.

In addition, although the embodiment of the present invention has been described with the showerhead extension having a quadrant structure, the showerhead extension may have a divided structure in various forms.

In the foregoing description, a preferred embodiment of the present invention has been described, but the present invention is not limited thereto, and various modifications and changes may be made. In particular, it will be apparent to those skilled in the art that such modifications and variations fall within the scope of the present invention without departing from the spirit of the present invention, and such facts will be more apparent through the appended claims. Will be.

The present invention can improve the supply and demand problems according to the limitations of the ceramic processing by forming the showerhead extension portion in a divided structure, and in the case of a defect in the part can replace only the divided part that is defective can reduce the manufacturing cost It has an effect.

1 is a cross-sectional view of a portion including a showerhead extension in a conventional PECVD apparatus.

2 is a plan view showing a showerhead extension in a conventional PECVD apparatus.

Figure 3 is a schematic cross-sectional view of a plasma chemical vapor deposition (PECVD) apparatus according to an embodiment of the present invention.

Figure 4 is a plan view showing a showerhead extension in accordance with an embodiment of the present invention.

5 and 6 are cross-sectional views showing the engaging portions between the divided portions of the showerhead extension according to the embodiment of the present invention, respectively, along the cut line " D-D "

7 is a cross-sectional view showing a coupling structure of the showerhead extension and the chamber lid according to an embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

146 shower head extension

146a, 146b, 146c, and 146d: first, second, third and fourth divisions

LL, SL: Long and short sides of the showerhead extension

C: corner of showerhead extension

Claims (10)

Chamber lids and chamber bodies positioned at upper and lower portions, respectively, to form a reaction zone in a vacuum state that is isolated from an outer region; A susceptor installed at the chamber body and having a substrate mounted thereon; A shower head installed inside the chamber lid, spaced apart from the susceptor, uniformly injecting a reaction gas onto the substrate, and connected to an external power source to form a plasma with the susceptor; A showerhead extension part disposed between the showerhead and the chamber lid and made of ceramic to insulate the showerhead and the chamber lid and include a plurality of splittable parts; Plasma enhanced chemical vapor deposition apparatus comprising a. The method of claim 1, Plasma enhanced chemical vapor deposition apparatus that the contact surface of the two divided parts of the plurality of partitions coupled to each other overlap in plan. The method of claim 2, The contact surface of the two divided portions coupled to each other is plasma enhanced chemical vapor deposition apparatus consisting of a selected one of the inclined surface and tomographic surface corresponding to each other. The method of claim 1, And the showerhead extension unit is coupled to the selected one of the showerhead and the chamber lid through a fastening means. The method of claim 4, wherein Plasma enhanced chemical vapor deposition apparatus further comprises a shielding means made of an insulating material covering the fastening means. A showerhead extension for insulating a showerhead and a chamber lid of a plasma enhanced chemical vapor deposition apparatus, A showerhead extension comprising a plurality of splits made of ceramic and splittable. The method of claim 6, The showerhead extension of the plurality of partitions coupled to each other the contact surface of the two partitions overlapping in plan. The method of claim 7, wherein The contact surface of the two divided parts coupled to each other is a showerhead extension portion consisting of a selected one of the inclined surface and tomographic surface corresponding to each other. The method of claim 7, wherein The contact surface of the two divided parts coupled to each other is a showerhead extension spaced apart from each other. The method of claim 6, The showerhead extension portion has a long side and short sides of more than 2m showerhead extension.