CN220012796U - Film feeding chamber device of film plating equipment - Google Patents
Film feeding chamber device of film plating equipment Download PDFInfo
- Publication number
- CN220012796U CN220012796U CN202321525248.0U CN202321525248U CN220012796U CN 220012796 U CN220012796 U CN 220012796U CN 202321525248 U CN202321525248 U CN 202321525248U CN 220012796 U CN220012796 U CN 220012796U
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- China
- Prior art keywords
- feeding chamber
- holes
- gas distribution
- distribution box
- wafer
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- 238000007747 plating Methods 0.000 title claims description 13
- 235000012431 wafers Nutrition 0.000 claims abstract description 57
- 238000009826 distribution Methods 0.000 claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 230000000712 assembly Effects 0.000 claims abstract description 9
- 238000000429 assembly Methods 0.000 claims abstract description 9
- 238000005086 pumping Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000007888 film coating Substances 0.000 abstract description 4
- 238000009501 film coating Methods 0.000 abstract description 4
- 238000003475 lamination Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 9
- 238000000605 extraction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 239000010356 tongguan Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a film feeding chamber device of film coating equipment, which comprises: the wafer feeding chamber comprises a wafer feeding chamber body, wherein at least one group of gas distribution box assemblies are arranged in the wafer feeding chamber body, a certain distance is reserved between the gas distribution box assemblies and a carrier plate carrying silicon wafers, each gas distribution box assembly comprises two gas distribution boxes which are symmetrically distributed, a certain gap is formed between the two gas distribution boxes which are symmetrically distributed, a first through hole is formed in the bottom of the wafer feeding chamber body corresponding to the gap, second through holes and third through holes are symmetrically formed in two sides of the first through hole and perpendicular to the direction of the gap, the first through holes are larger than the second through holes and the third through holes, the first through holes are used for connecting coarse suction pipelines, and the second through holes and the third through holes are respectively used for connecting first fine suction pipelines and second fine suction pipelines. The utility model has the advantages that: the risk of substrate chipping, lamination, chipping during evacuation can be reduced. The vacuum of the sheet feeding chamber can be realized rapidly, the feeding beat is promoted, and the bottleneck work station is eliminated.
Description
Technical Field
The utility model relates to the technical field of semiconductor coating, in particular to a film feeding chamber device of coating equipment.
Background
The film plating inlet chamber in the film plating equipment provides a vacuum environment for film plating of silicon wafers and glass, and the film plating process can be started only after the vacuum environment is achieved. The method comprises the steps that a wafer is loaded on a carrier plate to be fed, a gate valve in a wafer feeding chamber is opened, a standard atmosphere environment (1.01x105pa) is adopted in the wafer feeding chamber at the moment, after the carrier plate is loaded on the carrier plate and the wafer is conveyed to a film coating wafer feeding chamber, the gate valve in the wafer feeding chamber is closed, and the wafer feeding chamber needs to be pumped to a high vacuum state so as to expire and reach the vacuum environment of the next process chamber, so that continuous production is realized.
In the actual production process, when the vacuum is pumped to a high vacuum state in a standard atmospheric environment, the silicon wafer is very sensitive to the flow of air flow, the air is directly conveyed to the upper part or the lower part of the silicon wafer in the related air flow, the air flow difference and the pressure difference of the air flow on the upper surface and the lower surface of the silicon wafer are large, so that the upper surface and the lower surface of the silicon wafer bear large pressure difference, the silicon wafer is extremely easy to crack, the thickness is only 100 micrometers due to the large size 210mm x 210mm of the silicon wafer, the silicon wafer is oscillated due to the air flow difference and the pressure difference, the silicon wafer falls off, the bad production of lamination and the like occurs, and the production quality is influenced. In addition, in order to avoid the above problems, in the actual production process, the speed of evacuating the wafer feeding chamber is generally reduced as much as possible, and the time required for reaching the process vacuum condition in the cavity of the wafer feeding chamber is long, so that the beat is prolonged, and the wafer feeding chamber becomes a bottleneck station of the film plating equipment.
Disclosure of Invention
The utility model provides a film feeding chamber device of film coating equipment, which solves the technical problems existing in the prior art.
According to one aspect of the present utility model, there is provided a film feeding chamber device of a film plating apparatus, characterized by comprising: the wafer feeding chamber comprises a wafer feeding chamber body, wherein at least one group of gas distribution box assemblies are arranged in the wafer feeding chamber body, a certain distance is reserved between the gas distribution box assemblies and a carrier plate carrying silicon wafers, each gas distribution box assembly comprises two gas distribution boxes which are symmetrically distributed, a certain gap is formed between the two gas distribution boxes which are symmetrically distributed, a first through hole is formed in the bottom of the wafer feeding chamber body corresponding to the gap, second through holes and third through holes are symmetrically formed in two sides of the first through hole and perpendicular to the direction of the gap, the first through holes are larger than the second through holes and the third through holes, the first through holes are used for connecting a rough pumping pipeline, the second through holes and the third through holes are respectively used for connecting a first fine pumping pipeline and a second fine pumping pipeline, and ports of the first fine pumping pipeline and the second fine pumping pipeline are converged and connected to the rough pumping pipeline.
Further, the rough pumping pipeline is provided with a rough pumping butterfly valve.
Further, the first fine suction pipeline and the second fine suction pipeline are respectively provided with a fine suction butterfly valve.
Further, the port of the rough pumping pipeline is connected with the vacuumizing main pipeline.
Further, a through groove is formed in the side portion of the wafer inlet chamber.
Further, the distance between the gas distribution box assembly and the carrier plate carrying the silicon wafers is 20-25 mm.
According to the technical scheme provided by the utility model, when the vacuum pump is used for vacuumizing, the air flow extracted from the vacuum pipeline assembly to the wafer inlet chamber is uniformly split through the air distribution box, the negative pressure air flow can only flow out from the uniformly distributed air holes of the air distribution box assembly, the distance between the carrier plate carrying the silicon wafer and the air distribution box assembly is only 20-25mm, and then the air in the wafer inlet chamber is extracted through the air distribution box assembly and the air extraction assembly at the bottom of the air inlet chamber, the air flow forms negative pressure from the gap between the air distribution box of the wafer inlet chamber and the carrier plate and the gap between the carrier plate and the split assembly, the flow of the air flow in the air inlet chamber is relaxed, the fluctuation of the air flow is small, the flow and the pressure of the air flow on the surfaces of two sides of the silicon wafer to be plated are uniform, so that the air pressures born by the two sides of the substrate to be plated are close, and the risks of substrate fragments, lamination and wafer falling in the vacuumizing process can be reduced. In addition, the vacuum pipelines of the air extraction assembly are selected to be two groups, one group is large in diameter, the other group is small in diameter, the stop valve of the vacuum pipeline is controlled to be switched through software, rough vacuumizing is performed firstly, then fine vacuumizing is performed, and vacuum in the film feeding chamber can be rapidly achieved, so that the vacuumizing time in the air feeding chamber is shortened, the feeding beat is improved, and the bottleneck station is eliminated.
The foregoing description is only an overview of the technology of the present utility model, and it is to be understood that the present utility model may be embodied in the form of specific details for the purpose of providing a more thorough understanding of the present utility model, and is to be understood as being a more complete description of the present utility model, as embodied in the following specific examples.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the utility model. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a schematic diagram showing an exploded structure of a film feeding chamber device of a film plating apparatus according to the present utility model;
FIG. 2 is a schematic structural view showing the working state of the film feeding chamber device of the film plating equipment;
FIG. 3 is a schematic bottom view of the film feeding chamber device of the film plating apparatus shown in FIG. 2.
Reference numerals indicate
1-a wafer inlet chamber 2-a gas distribution box component 3-a first through hole 4-a second through hole
5-vacuumizing main pipeline 6-through groove 7-rough pumping pipeline 8-rough pumping butterfly valve
9-third through hole 10-first fine extraction pipeline 11-second fine extraction pipeline
12-rough pumping pipeline 13-fine pumping butterfly valve
Detailed Description
Exemplary embodiments of the present utility model will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present utility model are shown in the drawings, it should be understood that the present utility model may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the utility model to those skilled in the art.
The film feeding chamber device of the film coating equipment provided by the utility model is described in detail below. What is not described in detail in the embodiments of the present utility model belongs to the prior art known to those skilled in the art. The specific conditions are not noted in the examples of the present utility model and are carried out according to the conditions conventional in the art or suggested by the manufacturer.
Referring to fig. 1 to 3, a film feeding chamber device of a film plating apparatus according to the present utility model includes: the wafer inlet chamber 1 is provided with at least one group of gas distribution box assemblies 2 in the wafer inlet chamber 1, the gas distribution box assemblies 2 and a carrier plate (not shown) carrying silicon wafers are provided with a certain distance, the gas distribution box assemblies 2 comprise two gas distribution boxes which are symmetrically distributed, a certain gap is formed between the two gas distribution boxes which are symmetrically distributed, a first through hole 3 is formed in the bottom of the wafer inlet chamber corresponding to the gap, two sides of the first through hole 3 are symmetrically provided with a second through hole 4 and a third through hole 9 perpendicular to the direction of the gap, the first through hole 3 is larger than the second through hole 4 and the third through hole 9, the first through hole 3 is used for connecting a rough pumping pipeline 12, the second through hole 4 and the third through hole 9 are respectively used for connecting a first fine pumping pipeline 10 and a second fine pumping pipeline 11, and the ports of the first fine pumping pipeline 10 and the second fine pumping pipeline 11 are converged and connected to the rough pumping pipeline 12.
Specifically, the rough pumping pipeline 12 is provided with a rough pumping butterfly valve 8.
Specifically, the first fine suction pipeline 10 and the second fine suction pipeline 11 are respectively provided with a fine suction butterfly valve 13.
Specifically, the port of the rough pumping pipeline 12 is connected with the vacuumizing main pipeline 5.
Specifically, a through groove 6 is formed at the side of the tablet inlet chamber 1.
Specifically, the distance between the gas distribution box assembly 2 and the carrier plate carrying the silicon wafers is 20-25 mm.
As a specific embodiment, the gas distribution box is of a conductive hollow structure, the gas distribution box is parallel to the electrode plates and is opposite to the electrode plates, and a plurality of deposition ports for ionized gas to pass through are formed in the bottom of the gas distribution box in a penetrating manner.
As a specific embodiment, the carrier plate is parallel to the gas distribution box and is opposite to the gas distribution box.
As a specific embodiment, two poles of the power supply are respectively and correspondingly electrically connected with the electrode plate and the gas distribution box.
As a specific embodiment, the chamber of the tablet inlet chamber is provided with an air outlet pipe and an air inlet pipe, the end parts of the air outlet pipe and the air inlet pipe are respectively communicated with the atmosphere, and at least one vacuum valve is respectively arranged on the pipe bodies of the air outlet pipe and the air inlet pipe.
As a specific embodiment, a first filter screen is arranged on the first through hole, so that the deflation speed is further reduced.
As a specific embodiment, a second filter screen is arranged on the second through hole, so that the deflation speed is further reduced.
As a specific embodiment, a third filter screen is arranged on the third through hole, so that the deflation speed is further reduced.
As a specific embodiment, the main vacuumizing pipeline is provided with a mechanical pump, a Luo Qianbeng and a butterfly valve, the speed of air suction and air discharge is further controlled by using the butterfly valve, the time of air suction and air discharge is increased, the fragment rate is reduced, and the product processing yield is improved.
As a specific embodiment, the gas distribution box comprises a gas distribution frame and a gas distribution plate close to the substrate side, and a closed box body is formed.
As a specific embodiment, the air inlet pipe penetrates through one side air distribution frame to be communicated with Fang Tongguan arranged in the air distribution box, the flow guide pipeline is arranged between one side pipeline connected with the air inlet pipe and the other side pipeline parallel to the side pipeline, two ends of the flow guide pipeline are communicated with Fang Tongguan, the flow guide pipeline is a circular pipe, and the pipe diameter of the flow guide pipeline is smaller than that of Fang Tongguan.
As a specific embodiment, a plurality of groups of gas distribution micropores are uniformly distributed on the flow guide pipeline, and each group of gas distribution micropores consists of a plurality of gas distribution micropores uniformly distributed on the circumference of the flow guide pipeline.
As a specific embodiment, a plurality of air nozzles are distributed on the air distribution plate, and the aperture of the air inlet end of each air nozzle is larger than that of the air outlet end.
As a specific embodiment, the uniformly distributed area of the air nozzles on the air distribution plate is larger than the area of the substrate, and the air nozzles in four corner areas on the air distribution plate are denser than other positions.
As a specific embodiment, the air distribution plate is also provided with cooling water channels distributed in a serpentine shape.
As a specific embodiment, a transmission roller is arranged in the chamber of the wafer feeding chamber, and a silicon wafer carrier plate is supported on the transmission roller.
As a specific embodiment, the gas distribution box extends along the length direction of the transmission roller, the gas distribution box is divided into a plurality of groups along the length direction, and a plurality of small holes are formed in the bottom of the gas distribution box and used for spraying gas.
When the vacuum-pumping device is used for vacuumizing, the air flow pumped from the vacuum pipeline assembly to the wafer inlet chamber is uniformly split through the air distribution box, negative pressure air flow can only flow out from uniformly distributed air holes of the air distribution box assembly, the distance between the carrier plate carrying the silicon wafer and the air distribution box assembly is only 20-25mm, and then air in the wafer inlet chamber is pumped out through the space between the air distribution box assembly and the air suction assembly at the bottom of the air inlet chamber, the air flow forms negative pressure from the space between the air distribution box of the wafer inlet chamber and the carrier plate and the space between the carrier plate and the split assembly, the flow of the air flow in the air inlet chamber is relaxed, the fluctuation of the air flow is small, the flow and the pressure of the air flow on the surfaces of two sides of the silicon wafer to be plated are uniform, so that the air pressure borne by the two sides of the substrate to be plated is close, and the risks of fragments, lamination and wafer dropping of the substrate in the vacuumizing process can be reduced. In addition, the vacuum pipelines of the air extraction assembly are selected to be two groups, one group is large in diameter, the other group is small in diameter, the stop valve of the vacuum pipeline is controlled to be switched through software, rough vacuumizing is performed firstly, then fine vacuumizing is performed, and vacuum in the film feeding chamber can be rapidly achieved, so that the vacuumizing time in the air feeding chamber is shortened, the feeding beat is improved, and the bottleneck station is eliminated.
It should be understood that the utility model is not limited to the particular arrangements and instrumentality described above and shown in the drawings. For the sake of brevity, a detailed description of known methods is omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method processes of the present utility model are not limited to the specific steps described and shown, and those skilled in the art can make various changes, modifications and additions, or change the order between steps, after appreciating the spirit of the present utility model.
Claims (6)
1. A film feeding chamber device of a film plating device, comprising: the wafer feeding chamber comprises a wafer feeding chamber body, wherein at least one group of gas distribution box assemblies are arranged in the wafer feeding chamber body, a certain distance is reserved between the gas distribution box assemblies and a carrier plate carrying silicon wafers, each gas distribution box assembly comprises two gas distribution boxes which are symmetrically distributed, a certain gap is formed between the two gas distribution boxes which are symmetrically distributed, a first through hole is formed in the bottom of the wafer feeding chamber body corresponding to the gap, second through holes and third through holes are symmetrically formed in two sides of the first through hole and perpendicular to the direction of the gap, the first through holes are larger than the second through holes and the third through holes, the first through holes are used for connecting a rough pumping pipeline, the second through holes and the third through holes are respectively used for connecting a first fine pumping pipeline and a second fine pumping pipeline, and ports of the first fine pumping pipeline and the second fine pumping pipeline are converged and connected to the rough pumping pipeline.
2. The film feeding chamber device of claim 1, wherein the rough suction pipeline is provided with a rough suction butterfly valve.
3. The film feeding chamber device of claim 1, wherein the first and second fine suction pipes are respectively provided with a fine suction butterfly valve.
4. The film feeding chamber device of claim 1, wherein the port of the rough pumping pipeline is connected with a vacuum pumping main pipeline.
5. The film feeding chamber device of claim 1, wherein a through groove is formed at a side portion of the film feeding chamber.
6. The film feeding chamber device of claim 1, wherein the distance between the gas distribution box assembly and the carrier plate carrying the silicon wafers is 20 to 25mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321525248.0U CN220012796U (en) | 2023-06-15 | 2023-06-15 | Film feeding chamber device of film plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321525248.0U CN220012796U (en) | 2023-06-15 | 2023-06-15 | Film feeding chamber device of film plating equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220012796U true CN220012796U (en) | 2023-11-14 |
Family
ID=88686057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321525248.0U Active CN220012796U (en) | 2023-06-15 | 2023-06-15 | Film feeding chamber device of film plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220012796U (en) |
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2023
- 2023-06-15 CN CN202321525248.0U patent/CN220012796U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant |