CN114875387B - Film deposition device and gas distribution mechanism thereof - Google Patents
Film deposition device and gas distribution mechanism thereof Download PDFInfo
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- CN114875387B CN114875387B CN202210325415.0A CN202210325415A CN114875387B CN 114875387 B CN114875387 B CN 114875387B CN 202210325415 A CN202210325415 A CN 202210325415A CN 114875387 B CN114875387 B CN 114875387B
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- 238000009826 distribution Methods 0.000 title claims abstract description 52
- 230000008021 deposition Effects 0.000 title claims abstract description 24
- 238000005507 spraying Methods 0.000 claims abstract description 96
- 239000007921 spray Substances 0.000 claims abstract description 58
- 238000000427 thin-film deposition Methods 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 21
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 5
- 238000013073 enabling process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 39
- 239000007789 gas Substances 0.000 description 54
- 238000010438 heat treatment Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
Abstract
The application discloses a film deposition device and a gas distribution mechanism thereof, wherein the gas distribution mechanism comprises a spray backboard, a gas equalization board, a uniform flow board and a spray board which are sequentially arranged along a first direction; the spray backboard and the spray board jointly form a spray header, the air homogenizing board and the air homogenizing board are positioned in the spray header, a first air homogenizing cavity is formed between the air homogenizing board and the spray backboard, a second air homogenizing cavity is formed between the air homogenizing board and the spray board, and the air homogenizing board is arranged in the first air homogenizing cavity; the spraying backboard is provided with a first through hole at a position facing the air homogenizing board; the air equalizing plate is provided with a through air equalizing hole; the uniform flow plate is provided with a through uniform flow hole which is used for enabling the process gas to enter the second uniform air cavity from the first uniform air cavity; the spray plate is provided with a through spray hole. The film deposition device and the gas distribution mechanism thereof can improve the gas distribution uniformity, thereby improving the film deposition uniformity.
Description
Technical Field
The application relates to the technical field of photovoltaic production, in particular to a thin film deposition device and an air distribution mechanism thereof.
Background
With the popularization of solar power generation, the demand of photovoltaic products is increasing, and the requirements on equipment for manufacturing the photovoltaic products are increasing. The equipment for manufacturing the photovoltaic product is required to increase the productivity, the silicon wafer is larger and larger in size, and the requirement on the efficiency of the battery piece is higher and higher.
The heterojunction battery piece process theoretical efficiency reaches more than 28%, is the process route with the highest theoretical efficiency at present, has simple process route procedures and only 4 processes, reduces more than 5 processes compared with the current main-stream PERC (Passivated Emitter and Rear Cell, emitter passivation and back electrode) and TOPCON (Tunnel Oxide Passivated Contact, tunneling oxide passivation contact) process route, and has excellent development prospect.
The 4 working procedures of the heterojunction battery process flow are respectively texturing cleaning, amorphous silicon film deposition, conductive film deposition and screen printing of electrodes. Wherein the amorphous silicon film may be deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition ).
In the prior art, in order to improve productivity, some PECVD thin film deposition devices make the cavity large, but after the cavity is enlarged, the uniformity of thin film deposition is reduced.
Disclosure of Invention
The application mainly solves the technical problem of providing a film deposition device and a gas distribution mechanism thereof, which can improve the gas distribution uniformity, thereby improving the film deposition uniformity.
In order to solve the technical problems, the application adopts a technical scheme that: provided is a gas distribution mechanism of a thin film deposition apparatus, comprising:
the device comprises a spraying backboard, an air homogenizing board, a uniform flow board and a spraying board which are sequentially arranged along a first direction;
the spray backboard and the spray board jointly form a spray header, the air homogenizing board and the flow homogenizing board are positioned in the spray header, a first air homogenizing cavity is formed between the flow homogenizing board and the spray backboard, a second air homogenizing cavity is formed between the flow homogenizing board and the spray board, and the air homogenizing board is arranged in the first air homogenizing cavity; the spraying backboard is provided with a first through hole at a position facing the air homogenizing board; the air equalizing plate is provided with a through air equalizing hole; the flow homogenizing plate is provided with a through flow homogenizing hole, and the flow homogenizing hole is used for enabling the process gas to enter the second air homogenizing cavity from the first air homogenizing cavity; the spray plate is provided with a through spray hole.
Further, the air distribution mechanism of the film deposition device further comprises a first air inlet pipe and an air inlet flange, an outlet of the first air inlet pipe is connected with the air inlet flange, and the first air inlet pipe and the air inlet flange are positioned on one side of the spraying backboard, which is away from the air homogenizing plate; the first through hole and the inner wall of the air inlet flange form an air inlet; in the first direction, the diameter of the air inlet is gradually increased, the air equalizing holes are staggered with the uniform flow holes, and the uniform flow holes are staggered with the spraying holes.
Further, the gas distribution mechanism of the thin film deposition device further comprises at least two first connecting components, wherein the first connecting components are used for fixedly connecting the uniform flow plate, the spraying plate and the spraying backboard.
Further, the first connecting assembly comprises a first fastening piece, the spraying backboard is provided with a second through hole for installing the first fastening piece, the uniform flow board is provided with a third through hole for the first fastening piece to pass through, and the spraying board is provided with a fourth through hole for installing the first fastening piece;
the fourth through hole is coincident with the spraying hole, at least two inclined holes are formed in the periphery of the fourth through hole in the spraying plate, one end of each inclined hole is communicated with the cavity between the uniform flow plate and the spraying plate, and the other end of each inclined hole is communicated with the fourth through hole.
Further, the first connection assembly further includes:
the boss is positioned between the spraying backboard and the uniform flow plate, and the height of the boss is larger than or equal to the distance between the spraying backboard and the uniform flow plate in the first direction; the boss is provided with a fifth through hole for the first fastener to penetrate through;
the positioning ring is positioned between the uniform flow plate and the spray plate, and the height of the positioning ring in the first direction is larger than or equal to the distance between the uniform flow plate and the spray plate; the positioning ring is provided with a sixth through hole for the first fastening piece to penetrate through.
Further, the gas distribution mechanism of the thin film deposition device further comprises an insulating plate group positioned on the periphery sides of the spraying plate and the spraying back plate, one end of the insulating plate group is aligned with the surface of the spraying back plate, which is away from the spraying plate, in the first direction, and the other end of the insulating plate group exceeds the surface of the spraying plate, which is away from the spraying back plate;
and/or the insulating board group comprises a first insulating board and a second insulating board, wherein the first insulating board extends along the first direction, and the second insulating board extends perpendicular to the first direction.
The application adopts another technical scheme that: provided is a thin film deposition apparatus including:
the air distribution mechanism according to any one of the above embodiments;
the main body is internally provided with a reaction cavity, and at least part of the gas distribution mechanism is positioned in the reaction cavity; the main body comprises a cavity cover, and the cavity cover is fixedly connected with the spraying backboard;
the carrier plate is used for containing a product to be processed; the support plate is positioned in the reaction cavity and is positioned at one side of the spraying plate, which is away from the spraying backboard.
Further, the side length of the reaction cavity is at least 2 meters.
Further, the thin film deposition apparatus further includes a second connection assembly for connecting the chamber cover and the shower back plate, the second connection assembly including:
a second fastener;
the first insulating ring is positioned between the cavity cover and the spraying backboard, and the second fastening piece penetrates through the cavity cover and the first insulating ring to be fixed on the spraying backboard;
a first spacer disposed between the second fastener and the cavity cover;
the first cover plate is arranged on one side of the cavity cover, which is away from the spraying backboard, and is connected with the first isolation piece.
Further, the thin film deposition apparatus further comprises a third connection assembly for connecting the chamber cover and the shower back plate; the third connecting component is positioned at the end part of the spraying backboard; the third connection assembly includes:
the spraying backboard is provided with a seventh through hole for the third fastener to penetrate through;
the second insulating ring is positioned between the cavity cover and the spraying backboard; the third fastener penetrates through the spraying backboard and the second insulating ring to be fixed on the cavity cover;
the insulating sleeve is arranged in the seventh through hole, and the outer diameter of one side of the insulating sleeve facing the spray plate is larger than the outer diameter of one side of the insulating sleeve facing away from the spray plate; the inner wall of the insulating sleeve and the third fastener have a first gap in a second direction; the second direction intersects the first direction;
and the second isolation piece is arranged between the third fastening piece and the spraying plate.
Further, the second insulating ring comprises a first ring part and a second ring part, the second ring part is positioned on the periphery side of the first ring part, a first cavity is formed between the first ring part and the second ring part, and the first cavity is communicated with the outside of the second insulating ring.
Unlike the prior art, the application has the beneficial effects that: according to the gas distribution mechanism of the thin film deposition device, the spraying backboard, the gas distribution plate, the uniform flow plate and the spraying plate are sequentially arranged along the first direction, the gas distribution plate is provided with the through gas distribution holes, the uniform flow plate is provided with the through uniform flow holes, the spraying plate is provided with the through spraying holes, and process gas can sequentially pass through the gas distribution holes, the uniform flow holes and the spraying holes and enter the reaction cavity to react with a product to be processed, so that the gas distribution uniformity of the gas distribution mechanism can be improved, and the thin film deposition uniformity is improved.
In addition, in the first direction, the air equalizing holes are staggered with the air equalizing holes, and the air equalizing holes are staggered with the spraying holes, so that uneven air distribution caused by local small hole overlapping can be prevented, and the air distribution uniformity is further improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. Wherein:
fig. 1 is a schematic structural diagram of a thin film deposition apparatus and an air distribution mechanism thereof according to the present embodiment;
fig. 2 is a schematic structural diagram of a first connecting component provided in the present embodiment;
fig. 3 is a schematic structural diagram of an insulating board set according to the present embodiment;
fig. 4 is a schematic structural diagram of a third connection assembly according to the present embodiment.
Reference numerals illustrate:
1. a cavity cover; 9. a second fastener; 10. a first air inlet pipe; 11. an air inlet flange; 13. a first insulating ring; 14. a second insulating ring; 15. a third fastener; 16. an insulating sleeve; 17. a gasket; 18. a first insulating plate; 19. a second spacer; 20. a second insulating plate; 21. a first screw; 22. a spray plate; 23. a flow homogenizing plate; 24. a boss; 25. a second air equalizing cavity; 26. spraying holes; 27. a first connection assembly; 28. a uniform flow hole; 29. a gas equalizing plate; 30. a spacer ring; 31. a first air equalizing cavity; 33. spraying a backboard; 35. a third cover plate; 36. a first fastener; 37. a second screw; 38. a positioning ring; 39. inclined holes; 40. an air inlet; 41. a gasket; 42. an insulating cap; 43. a first sharp corner; 44. a third sharp corner; 45. a second sharp corner; 46. a border; 47. a border; 48. a first ring portion; 49. a second ring portion; 50. a first cavity; 51. a first gap; 52. a second gap; 53. a common edge; 54. a beveled edge; 55. a border; 57. a third gap;
x: a first direction;
y: a second direction.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Please refer to fig. 1. The embodiment of the application provides an air distribution mechanism of a film deposition device, which comprises a spray backboard 33, an air homogenizing plate 29, an air homogenizing plate 23 and a spray plate 22 which are sequentially arranged along a first direction X.
Wherein the shower back plate 33 and the shower plate 22 together form a shower header, and the air homogenizing plate 29 and the air homogenizing plate 23 are positioned in the shower header. A first air-homogenizing cavity 31 is formed between the homogenizing plate 23 and the spraying back plate 33, a second air-homogenizing cavity 25 is formed between the homogenizing plate 23 and the spraying plate 22, and the air-homogenizing plate 29 is arranged in the first air-homogenizing cavity 31. The shower back plate 33 is provided with a first through hole at a position facing the gas-equalizing plate 29. The gas-equalizing plate 29 is provided with a through gas-equalizing hole (not shown). The flow homogenizing plate 23 is provided with through flow homogenizing holes 28, and the flow homogenizing holes 28 are used for allowing the process gas to enter the second gas homogenizing chamber 25 from the first gas homogenizing chamber 31. The shower plate 22 is provided with shower holes 26 therethrough.
According to the gas distribution mechanism of the film deposition device, process gas can sequentially pass through the gas equalizing holes, the gas equalizing holes 28 and the spraying holes 26 and enter the reaction cavity to react with a product to be processed, so that the gas distribution mechanism can improve gas distribution uniformity, and further improve film deposition uniformity.
In the present embodiment, the area of the gas uniformity plate 29 is larger than or equal to the area of the first through holes, so that all the process gases flowing out of the first through holes can be uniformly distributed. The area described in this embodiment means an area of a surface perpendicular to the first direction X. Preferably, the central lines of the spraying backboard 33, the air homogenizing board 29, the air homogenizing board 23 and the spraying board 22 can be overlapped, so that the air distribution mechanism is symmetrically distributed, and the air distribution is more uniform.
Preferably, the air distribution mechanism further comprises a first air inlet pipe 10 and an air inlet flange 11. The outlet of the first inlet pipe 10 is connected to an inlet flange 11. The first air inlet pipe 10 and the air inlet flange 11 are located on the side of the shower back plate 33 facing away from the air equalization plate 29. The first through hole of the shower backplate 33 and the inner wall of the air intake flange 11 form an air intake 40. In the first direction X, the diameter of the air inlet 40 gradually increases, i.e. the air inlet flange 11 tapers. The intake flange 11 may be a water cooled flange. A space ring 30 is arranged between the air equalizing plate 29 and the spraying backboard 33, so that the air equalizing plate 29 is fixedly connected with the spraying backboard 33.
In the present embodiment, in the first direction X, the air-equalizing holes and the air-equalizing holes 28 are staggered, and the air-equalizing holes 28 and the shower holes 26 are staggered, so that uneven air distribution caused by local small hole overlapping can be prevented, and air distribution uniformity can be further improved.
The process gas enters the gas inlet 40 from the first gas inlet pipe 10 through the gas inlet flange 11 and then enters the first gas equalizing cavity 31. The first inlet pipe 10 has a relatively high inflow speed, and the process gas enters the inlet flange 11, and the process gas diffuses to the periphery due to the gradual expansion of the volume, so that the speed is reduced, and a first gas equalizing layer is formed.
The process gas continues to flow to the gas-equalizing plate 29, a small gap is formed between the gas-equalizing plate 29 and the spray backboard 33, the process gas is blocked by the gas-equalizing plate 29 and then diffuses to the periphery through the gap, and meanwhile, the process gas can diffuse downwards from the gas-equalizing holes, and the gas-equalizing plate 29 forms a second gas-equalizing layer.
Thereafter, the process gas is diffusion-filled in the first gas-equalizing chamber 31, gradually and uniformly, and then flows into the second gas-equalizing chamber 25 through the gas-equalizing holes 28 of the gas-equalizing plate 23, and the gas-equalizing plate 23 forms a third gas-equalizing layer.
Finally, the process gas is uniformly diffused and filled in the second air-equalizing cavity 25, then is sprayed out through the spraying holes 26 of the spraying plate 22, uniformly flows to the product to be processed on the surface of the carrier plate, and the spraying plate 22 forms a fourth air-equalizing layer.
According to the four-layer gas-equalizing layer, the gas distribution mechanism is guaranteed to have excellent gas distribution uniformity, so that the flow field uniformity of process gas in the film deposition device is improved, and the film deposition uniformity is improved.
In this embodiment, a uniform plasma field is formed between the lower surface of the shower plate 22 and the carrier plate, and the gap between the lower surface of the shower plate 22 and the carrier plate is required to be uniform, so that the flatness of the lower surface of the shower plate 22 is required to be high, and the deformation of the shower plate 22 is required to be small. While the shower plate 22 has a large area (for example, a surface thereof perpendicular to the first direction X may be square, and a side length may be 2 to 5 meters), and the shower plate 22 has a high temperature (for example, may be 200 to 300 c), and the shower plate 22 is extremely susceptible to thermal deformation or sagging.
Thus, the air distribution mechanism further comprises at least two first connection assemblies 27. The first connection assembly 27 is located on the peripheral side of the gas-equalizing plate 29 and is located approximately at the intermediate position of the gas-equalizing plate 23 and the shower plate 22. The first connecting assembly 27 can fixedly connect the uniform flow plate 23, the spray plate 22 and the spray back plate 33, can prevent sagging deformation of the middle parts of the uniform flow plate 23 and the spray plate 22, ensures the flatness of the lower surface of the spray plate 22, improves the uniformity of an electric field and improves the uniformity of film deposition.
Specifically, as shown in FIG. 2, the first connection assembly 27 may include a first fastener 36. The shower back plate 33 is provided with a second through hole for installing the first fastening piece 36, the uniform flow plate 23 is provided with a third through hole for the first fastening piece 36 to pass through, and the shower plate 22 is provided with a fourth through hole for installing the first fastening piece 36. The first fastener 36 may be a screw or other fastener having a securing effect. A third cover plate 35 may be disposed on the side of the shower back plate 33 facing away from the shower plate 22, where the third cover plate 35 covers the second through hole and may reinforce the shower back plate 33.
Wherein the fourth through hole coincides with the location of one of the shower holes 26 where the mounting of the first fastener 36 would result in uneven distribution of process gas. Therefore, the shower plate 22 is provided with at least two inclined holes 39 on the peripheral side of the fourth through hole, and the extending direction of the inclined holes 39 intersects the first direction X. One end of the inclined hole 39 is communicated with a cavity (namely the second air equalizing cavity 25) between the uniform flow plate 23 and the spray plate 22, and the other end is communicated with the fourth hole, so that process gas can enter the spray holes 26 below the first fastening pieces 36 through the inclined hole 39, the influence caused by the first fastening pieces 36 is eliminated, and the uniformity of gas distribution is ensured.
In addition, to prevent compression deformation of the shower backing 33, the flow distributor plate 23, and the shower plate 22 when the first fastener 36 is tightened, the first connection assembly 27 further includes the boss 24 and the retaining ring 38. The boss 24 is located between the shower back plate 33 and the flow homogenizing plate 23. In the first direction X, the height of the boss 24 is greater than or equal to the distance between the shower backplate 33 and the uniform flow plate 23. The boss 24 is provided with a fifth through hole through which the first fastener 36 is inserted. The retaining ring 38 is located between the flow uniformity plate 23 and the shower plate 22. In the first direction X, the height of the positioning ring 38 is greater than or equal to the distance between the uniform flow plate 23 and the shower plate 22. The positioning ring 38 is provided with a sixth through hole through which the first fastener 36 is inserted. By providing the boss 24 and the positioning ring 38, the shower back plate 33, the uniform flow plate 23, and the shower plate 22 can be fixed to each other with a gap in the first direction X at the time of tightening the first fastener 36 without being deformed by buckling. Wherein, the positioning ring 38 can be fixedly connected with the uniform flow plate 23 and the boss 24 through the second screw 37.
In this embodiment, the high frequency voltage is fed from the conductive plate to the shower back plate 33 and then conducted to the shower plate 22, and the lower surface of the shower plate 22 and the grounded carrier plate form a plasma field. The spraying back plate 33, the spraying plate 22 and the internal metal parts thereof are all provided with high-frequency voltage, so that unnecessary and harmful arcing discharge is easily formed with the peripheral metal parts, particularly at the sharp corners of the edges, and special insulation treatment is needed.
As shown in fig. 1 and 3, the present air distribution mechanism further includes an insulating plate group located on the peripheral sides of the shower plate 22 and the shower back plate 33. The insulation plate set may be fixedly mounted to the shower plate 22. In the first direction X, one end of the insulating plate group is aligned with the surface of the shower back plate 33 facing away from the shower plate 22, and the other end is beyond the surface of the shower plate 22 facing away from the shower back plate 33.
Specifically, the insulating plate group includes a first insulating plate 18 and a second insulating plate 20, the first insulating plate 18 extending in the first direction X, and the second insulating plate 20 extending perpendicular to the first direction X. The first insulating plate 18 and the second insulating plate 20 have high temperature resistance characteristics. The edges and sharp corners of the shower plate 22 may be completely wrapped by the first and second insulating plates 18, 20, the common edge 53 of the first and second insulating plates 18, 20 nested within each other may wrap the first sharp corner 43 of the shower plate 22, the edges 46, 47 of the second insulating plate 20 may wrap the second sharp corner 45 of the shower plate 22, and the edges 47, 55 of the second insulating plate 20 may wrap the third sharp corner 44 of the shower plate 22. The sloping side 54 of the second insulating plate 20 smoothly transitions from the bottom side of the second insulating plate 20 to the bottom side of the shower plate 22, preventing disturbance of the gas flow, preventing formation of vortex, etc.
Further, the second insulating plate 20 may be mounted to the shower plate 22 by the first screw 21. Since the first screw 21 is made of metal, and is connected to the shower plate 22 with high-frequency voltage, the first screw 21 also has high-frequency voltage. Therefore, the head of the first screw 21 is provided with a threaded hole, and the elongated thread inside the insulating cap 42 fastens the insulating cap 42 on the head of the first screw 21, so as to insulate and protect the first screw 21 and prevent the first screw 21 from arcing with the bottom metal piece. A washer 41 is provided between the insulating cap 42 and the first screw 21.
Please refer to fig. 1. The embodiment of the application also provides a thin film deposition device which comprises a main body, a carrier plate (not shown) and an air distribution mechanism. The air distribution mechanism may be an air distribution mechanism as described in any embodiment, and the present application is not described herein.
The main body is internally provided with a reaction cavity (not shown), and at least part of the gas distribution mechanism is positioned in the reaction cavity. The main body comprises a cavity cover 1, and the cavity cover 1 is fixedly connected with a spraying backboard 33. The carrier plate is used for containing products to be processed. The carrier plate is located within the reaction chamber and on the side of the shower plate 22 facing away from the shower back plate 33.
In this embodiment, the thin film deposition apparatus further includes a second connection assembly for connecting the chamber lid 1 and the shower backboard 33. The second connection assembly comprises a second fastener 9, a first insulating ring 13, a first spacer and a first cover plate. The second fastener 9 may be a screw or other fastener having a fixing effect.
The first insulating ring 13 is located between the chamber cover 1 and the spraying backboard 33, and the second fastening piece 9 penetrates through the chamber cover 1 and the first insulating ring 13 to be fixed on the spraying backboard 33. The first spacer is provided between the second fastener 9 and the chamber cover 1. The first cover plate is arranged on one side of the cavity cover 1, which faces away from the spraying backboard 33, and is connected with the first isolating piece.
A third insulating ring may be provided between the side of the second fastener 9 remote from the shower backplate 33 and the first cover plate. The first spacer and the third insulating ring insulate the second fastener 9 with the high frequency voltage, preventing the high frequency voltage from being conducted to the chamber cover 1. The first cover plate plays a role in pressing the third insulating ring and simultaneously plays a role in reinforcing the grooving of the cavity cover 1.
In this embodiment, the thin film deposition apparatus further includes a third connection assembly for connecting the chamber lid 1 and the shower backboard 33. Preferably, the second connection assembly is located on the peripheral side of the first connection assembly 27, and the second connection assembly is located approximately in the middle portion of the shower backplate 33. The third connection assembly is located at the end of the shower backplate 33 and the second connection assembly is closer to the first connection assembly 27 than the third connection assembly.
As shown in fig. 4, the third connection assembly includes a third fastener 15, a second insulating ring 14, an insulating sleeve 16, and a second spacer 19. The third fastener 15 may be a screw or other fastener having a fixing function. In the present embodiment, the shower back plate 33 is mounted and fastened to the chamber cover 1 by the second fastening member 9 and the third fastening member 15. Wherein the second fastening member 9 and the third fastening member 15 are oppositely oriented, so that the connection is more stable and convenient.
The shower back plate 33 is provided with a seventh through hole through which the third fastening member 15 is penetrated. The second insulating ring 14 is located between the chamber lid 1 and the shower backplate 33. The third fastening piece 15 is arranged through the spraying backboard 33 and the second insulating ring 14 and is fixed on the cavity cover 1. The insulating sleeve 16 is arranged in the seventh through hole, the outer diameter of the side of the insulating sleeve 16 facing the shower plate 22 is larger than the outer diameter of the side facing away from the shower plate 22, i.e. the insulating sleeve 16 may be stepped. The inner wall of the insulating sleeve 16 and the third fastener 15 have a first gap 51 in the second direction Y. The second spacer 19 is disposed between the third fastener 15 and the shower plate 22. The second direction Y intersects the first direction X. Preferably, the second direction Y is perpendicular to the first direction X. In this embodiment, the first direction X is a vertical direction, and the second direction Y is a horizontal direction.
Because the size of the spray backboard 33 is larger, the temperature difference between the spray backboard 33 and the cavity cover 1 is larger, and the thermal deformation relative displacement is larger. The shower backplate 33 and the chamber cover 1 are fixedly connected by a second connection assembly, which is approximately in the middle of the shower backplate 33, so that the expansion of the shower backplate 33 is mainly manifested at the ends/surroundings, whereby the third connection assembly is provided with a first gap 51.
Preferably, a spacer 17 may be provided between the third fastener 15 and the insulating sleeve 16. The inner wall of the insulating sleeve 16 and the spacer 17 are provided with a second gap 52 in the second direction Y. When the spray backboard 33 is heated and expanded to shift left, the third fastening piece 15 and the gasket 17 are relatively fixed, and due to the existence of the first gap 51 and the second gap 52, the insulating sleeve 16 is driven to move left, the thermal expansion displacement is released, the spray backboard 33 and the spray board 22 are prevented from being damaged by themselves or other parts caused by huge thermal stress and thermal deformation due to the limitation of the thermal expansion deformation, the flatness of the lower surface of the spray board 22 is ensured, the electric field uniformity is improved, and the film deposition uniformity is improved. The insulating sleeve 16 may be circular in shape so as to have a good compensation for thermal expansion deformations of 360 degrees.
In the present embodiment, the shower back plate 33 is provided with a high-frequency voltage, and the chamber cover 1 is grounded, and the high-frequency voltage of the shower back plate 33 cannot be transmitted to the chamber cover 1, so that an insulating process is performed between the shower back plate 33 and the chamber cover 1. The first insulating ring 13 and the second insulating ring 14 are made of a high temperature resistant nonmetallic material, and prevent conduction between the shower back plate 33 and the chamber cover 1. Meanwhile, the first insulating ring 13 has a sealing structure, and seals the space between the spray backboard 33 and the cavity cover 1 to form a vacuum sealing area.
Although the second spacer is an insulating material, the outer surface of the second spacer is deposited with a thin film for a long time, and the film layer has conductivity, so the second spacer has a special design. The second insulating ring 14 includes a first ring portion 48 and a second ring portion 49, the second ring portion 49 being located on a peripheral side of the first ring portion 48, a first cavity 50 being provided between the first ring portion 48 and the second ring portion 49, the first cavity 50 communicating with an outside of the second insulating ring 14. In this way, the risk of film deposition inside the first cavity 50 is greatly reduced, so that the outer surface of the second isolation ring is prevented from being deposited by the film to conduct the spray backboard 33 and the cavity cover 1, and the electric field stability is ensured.
Because the spraying backboard 33 carries high-frequency voltage, the cavity cover 1 is grounded, the spraying backboard and the cavity cover cannot be conducted, and the third fastening piece 15 is made of metal and has a conductor function. Thus, the insulating sleeve 16 is made of a high temperature resistant insulating material, preventing the third fastener 15 from electrically conducting between the shower backplate 33 and the chamber cover 1. The second spacer 19 is installed between the head of the third fastener 15 and the charged shower plate 22, insulating the third fastener 15 from the shower plate 22. In this way, the high-frequency voltage carried by the shower back plate 33 and the shower plate 22 is prevented from being transmitted to the chamber cover 1.
In this embodiment, the parts such as the shower back plate 33, the shower plate 22 and the flow homogenizing plate 23 are easily polluted by the film deposition and dust particles during the process, so that a heating part can be arranged in the shower back plate 33 to heat the parts such as the shower back plate 33, the shower plate 22 and the flow homogenizing plate 23 and the internal gas thereof, on one hand, the temperature of the gas distribution mechanism can be increased, the surface film deposition and dust adhesion can be reduced, and on the other hand, the process gas can be heated to reach or approach the process temperature before the process is performed, the film deposition uniformity and the film deposition efficiency can be improved, and the cost can be reduced. The heating portion may be a heater nested on the upper surface of the shower backplate 33.
Meanwhile, since the spraying backboard 33 is provided with high-frequency voltage, the outgoing line of the heating part of the spraying board 22 is connected with the filter, so that the interaction between the high-frequency voltage of the spraying backboard 33 and the heating part and the temperature measuring sensor of the heating part can be eliminated. The cavity cover 1 can be provided with an insulating sleeve through which the outgoing line passes. The insulating sleeve is made of high-temperature resistant insulating materials, and high-frequency voltage of the outgoing line of the heating part is prevented from being transmitted to the cavity cover 1.
In the present embodiment, a third gap 57 is provided between the chamber lid 1 and the shower back plate 33. The thin film deposition apparatus may further include a second air inlet pipe and a second cover plate. The second air inlet pipe is used for conveying inert gas. The second cover plate is arranged on one surface of the cavity cover 1 facing the spraying backboard 33, and the second cover plate and the cavity cover 1 form a blowing cavity. The outlet of the second air inlet pipe is connected with the purging cavity. The second cover plate is provided with a plurality of purge holes for communicating the purge chamber with the third gap 57.
The inert gas enters the purging cavity from the second air inlet pipe and flows into a third gap 57 formed among the cavity cover 1, the spraying backboard 33 and the first insulating ring 13, the process gas is blown away from the third gap 57, dust particle pollution formed by thin film deposition of the process gas on the surface of the third gap 57 is prevented, and arcing discharge between the lower surface of the cavity cover 1 and the upper surface of the spraying backboard 33 is prevented.
The shape of the main body is not limited only, but also can be cuboid, cylinder or other three-dimensional shapes. Accordingly, the cross section of the body may be rectangular, circular or otherwise in a direction perpendicular to the first direction X. In this embodiment, the cross section may be square and have a side length of at least 2 meters. I.e. the reaction chamber has a side length of at least 2 meters. The embodiment has a large-area cavity, so that a large-area carrier plate and a spray plate 22 can be arranged, and the large-area carrier plate can contain more objects to be treated, so that the productivity can be improved, and the cost can be reduced.
The thin film deposition device provided by the embodiment of the application is used for depositing the thin film of the photovoltaic cell slice in the heterojunction process, the process efficiency reaches more than 25%, and compared with the existing mainstream process and equipment, the thin film deposition device is high in efficiency, and the efficiency of the photovoltaic cell slice can be greatly improved. Therefore, the film deposition device improves the efficiency of the battery piece, reduces the processing procedures and reduces the equipment cost.
It should be noted that, in the description of the present specification, the terms "first," "second," and the like are used for descriptive purposes only and to distinguish between similar objects, and there is no order of preference therebetween, nor should it be construed as indicating or implying relative importance. In addition, in the description of the present specification, unless otherwise indicated, the meaning of "a plurality" is two or more.
Any numerical value recited herein includes all values of the lower and upper values that are incremented by one unit from the lower value to the upper value, as long as there is a separation of at least two units between any lower value and any higher value. For example, if it is stated that the number of components or the value of a process variable (e.g., temperature, pressure, time, etc.) is from 1 to 90, preferably from 20 to 80, more preferably from 30 to 70, then the purpose is to explicitly list such values as 15 to 85, 22 to 68, 43 to 51, 30 to 32, etc. in this specification as well. For values less than 1, one unit is suitably considered to be 0.0001, 0.001, 0.01, 0.1. These are merely examples that are intended to be explicitly recited in this description, and all possible combinations of values recited between the lowest value and the highest value are believed to be explicitly stated in the description in a similar manner.
Unless otherwise indicated, all ranges include endpoints and all numbers between endpoints. "about" or "approximately" as used with a range is applicable to both endpoints of the range. Thus, "about 20 to 30" is intended to cover "about 20 to about 30," including at least the indicated endpoints.
The term "consisting essentially of …" describing a combination shall include the identified element, ingredient, component or step as well as other elements, ingredients, components or steps that do not substantially affect the essential novel features of the combination. The use of the terms "comprises" or "comprising" to describe combinations of elements, components, or steps herein also contemplates embodiments consisting essentially of such elements, components, or steps. By using the term "may" herein, it is intended that any attribute described as "may" be included is optional.
Multiple elements, components, parts or steps can be provided by a single integrated element, component, part or step. Alternatively, a single integrated element, component, part or step may be divided into separate plural elements, components, parts or steps. The disclosure of "a" or "an" to describe an element, component, section or step is not intended to exclude other elements, components, sections or steps.
The foregoing description is only of embodiments of the present application, and is not intended to limit the scope of the application, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present application or directly or indirectly applied to other related technical fields are included in the scope of the present application.
Claims (10)
1. The air distribution mechanism of the film deposition device is characterized by comprising a spraying backboard, an air homogenizing board, a uniform flow board and a spraying board which are sequentially arranged along a first direction;
the spray backboard and the spray board jointly form a spray header, the air homogenizing board and the flow homogenizing board are positioned in the spray header, a first air homogenizing cavity is formed between the flow homogenizing board and the spray backboard, a second air homogenizing cavity is formed between the flow homogenizing board and the spray board, and the air homogenizing board is arranged in the first air homogenizing cavity; the spraying backboard is provided with a first through hole at a position facing the air homogenizing board; the air equalizing plate is provided with a through air equalizing hole; the flow homogenizing plate is provided with a through flow homogenizing hole, and the flow homogenizing hole is used for enabling process gas to enter the second air homogenizing cavity from the first air homogenizing cavity; the spray plate is provided with a through spray hole;
the third connecting component is used for connecting the spraying backboard with the cavity cover, is positioned at the end part of the spraying backboard and is provided with a first gap;
the air equalizing holes are staggered with the air equalizing holes, and the air equalizing holes are staggered with the spraying holes;
the spray plate is fixedly connected with the spray backboard, and the spray backboard is fixedly connected with the uniform flow plate;
the novel spraying device comprises a spraying plate, an insulating plate group, a spraying back plate, a spraying plate and a spray plate, wherein the insulating plate group is positioned on the periphery of the spraying plate and the periphery of the spraying back plate, one end of the insulating plate group is aligned with the surface of the spraying back plate, which is away from the spraying plate, in the first direction, and the other end of the insulating plate group is beyond the surface of the spraying back plate, which is away from the spraying back plate.
2. The gas distribution mechanism of the thin film deposition apparatus according to claim 1, further comprising a first gas inlet pipe and a gas inlet flange, wherein an outlet of the first gas inlet pipe is connected with the gas inlet flange, and the first gas inlet pipe and the gas inlet flange are positioned at one side of the spray backboard away from the gas equalization plate; the first through hole and the inner wall of the air inlet flange form an air inlet; in the first direction, the diameter of the air inlet gradually increases.
3. The gas distribution mechanism of the thin film deposition apparatus according to claim 1, wherein the first connection assembly comprises a first fastener, the shower back plate is provided with a second through hole for installing the first fastener, the uniform flow plate is provided with a third through hole for the first fastener to pass through, and the shower plate is provided with a fourth through hole for installing the first fastener;
the fourth through hole is coincident with the spraying hole, at least two inclined holes are formed in the periphery of the fourth through hole in the spraying plate, one end of each inclined hole is communicated with the cavity between the uniform flow plate and the spraying plate, and the other end of each inclined hole is communicated with the fourth through hole.
4. The gas distribution mechanism of the thin film deposition apparatus according to claim 3, wherein the first connection assembly further comprises:
the boss is positioned between the spraying backboard and the uniform flow plate, and the height of the boss is larger than or equal to the distance between the spraying backboard and the uniform flow plate in the first direction; the boss is provided with a fifth through hole for the first fastener to penetrate through;
the positioning ring is positioned between the uniform flow plate and the spray plate, and the height of the positioning ring in the first direction is larger than or equal to the distance between the uniform flow plate and the spray plate; the positioning ring is provided with a sixth through hole for the first fastening piece to penetrate through.
5. The gas distribution mechanism of the thin film deposition apparatus according to claim 1, wherein the insulating plate group includes a first insulating plate extending in the first direction and a second insulating plate extending perpendicular to the first direction.
6. A thin film deposition apparatus, comprising:
the air distribution mechanism of any one of claims 1-5;
the main body is internally provided with a reaction cavity, and at least part of the gas distribution mechanism is positioned in the reaction cavity; the main body comprises a cavity cover, and the cavity cover is fixedly connected with the spraying backboard;
the carrier plate is used for containing a product to be processed; the support plate is positioned in the reaction cavity and is positioned at one side of the spraying plate, which is away from the spraying backboard.
7. The thin film deposition apparatus according to claim 6, wherein the reaction chamber has a side length of at least 2 meters.
8. The thin film deposition apparatus of claim 6, further comprising a second connection assembly for connecting the chamber lid and the shower backplate, the second connection assembly comprising:
a second fastener;
the first insulating ring is positioned between the cavity cover and the spraying backboard, and the second fastening piece penetrates through the cavity cover and the first insulating ring to be fixed on the spraying backboard;
a first spacer disposed between the second fastener and the cavity cover;
the first cover plate is arranged on one side of the cavity cover, which is away from the spraying backboard, and is connected with the first isolation piece.
9. The thin film deposition apparatus of claim 6, wherein the third connection assembly comprises:
the spraying backboard is provided with a seventh through hole for the third fastener to penetrate through;
the second insulating ring is positioned between the cavity cover and the spraying backboard; the third fastener penetrates through the spraying backboard and the second insulating ring to be fixed on the cavity cover;
the insulating sleeve is arranged in the seventh through hole, and the outer diameter of one side of the insulating sleeve facing the spray plate is larger than the outer diameter of one side of the insulating sleeve facing away from the spray plate; the inner wall of the insulating sleeve and the third fastener have a first gap in a second direction; the second direction intersects the first direction;
and the second isolation piece is arranged between the third fastening piece and the spraying plate.
10. The thin film deposition apparatus according to claim 9, wherein the second insulating ring includes a first ring portion and a second ring portion, the second ring portion being located at a circumferential side of the first ring portion, a first cavity being provided between the first ring portion and the second ring portion, the first cavity being in communication with an outside of the second insulating ring.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311681267.7A CN117737704A (en) | 2022-03-29 | 2022-03-29 | Thin film deposition apparatus |
| CN202210325415.0A CN114875387B (en) | 2022-03-29 | 2022-03-29 | Film deposition device and gas distribution mechanism thereof |
| CN202311676422.6A CN117737703A (en) | 2022-03-29 | 2022-03-29 | Thin film deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210325415.0A CN114875387B (en) | 2022-03-29 | 2022-03-29 | Film deposition device and gas distribution mechanism thereof |
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| CN202311676422.6A Division CN117737703A (en) | 2022-03-29 | 2022-03-29 | Thin film deposition apparatus |
| CN202311681267.7A Division CN117737704A (en) | 2022-03-29 | 2022-03-29 | Thin film deposition apparatus |
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| CN114875387A CN114875387A (en) | 2022-08-09 |
| CN114875387B true CN114875387B (en) | 2023-11-17 |
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| CN202311681267.7A Pending CN117737704A (en) | 2022-03-29 | 2022-03-29 | Thin film deposition apparatus |
| CN202311676422.6A Pending CN117737703A (en) | 2022-03-29 | 2022-03-29 | Thin film deposition apparatus |
| CN202210325415.0A Active CN114875387B (en) | 2022-03-29 | 2022-03-29 | Film deposition device and gas distribution mechanism thereof |
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| CN202311676422.6A Pending CN117737703A (en) | 2022-03-29 | 2022-03-29 | Thin film deposition apparatus |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6302057B1 (en) * | 1998-09-15 | 2001-10-16 | Tokyo Electron Limited | Apparatus and method for electrically isolating an electrode in a PECVD process chamber |
| CN111304632A (en) * | 2020-03-17 | 2020-06-19 | 常州捷佳创精密机械有限公司 | Spraying device and process chamber |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100505367B1 (en) * | 2003-03-27 | 2005-08-04 | 주식회사 아이피에스 | Reactor for depositing thin film on wafer |
| KR100965758B1 (en) * | 2003-05-22 | 2010-06-24 | 주성엔지니어링(주) | Showerhead Assembly of Plasma Enhanced Chemical Vapor Deposition for Liquid Crystal Display Device |
| CN1669796B (en) * | 2004-02-23 | 2012-05-23 | 周星工程股份有限公司 | Device for manufacturing display basic board and blow head combination assemblaging therein |
| US20060137608A1 (en) * | 2004-12-28 | 2006-06-29 | Choi Seung W | Atomic layer deposition apparatus |
| US8092606B2 (en) * | 2007-12-18 | 2012-01-10 | Asm Genitech Korea Ltd. | Deposition apparatus |
| JP2019054189A (en) * | 2017-09-19 | 2019-04-04 | 東芝メモリ株式会社 | Deposition device and deposition method |
-
2022
- 2022-03-29 CN CN202311681267.7A patent/CN117737704A/en active Pending
- 2022-03-29 CN CN202311676422.6A patent/CN117737703A/en active Pending
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6302057B1 (en) * | 1998-09-15 | 2001-10-16 | Tokyo Electron Limited | Apparatus and method for electrically isolating an electrode in a PECVD process chamber |
| CN111304632A (en) * | 2020-03-17 | 2020-06-19 | 常州捷佳创精密机械有限公司 | Spraying device and process chamber |
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| CN117737703A (en) | 2024-03-22 |
| CN114875387A (en) | 2022-08-09 |
| CN117737704A (en) | 2024-03-22 |
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