CN203839396U - Device for preparing anti-PID (potential induced degradation) thin film - Google Patents
Device for preparing anti-PID (potential induced degradation) thin film Download PDFInfo
- Publication number
- CN203839396U CN203839396U CN201420237360.9U CN201420237360U CN203839396U CN 203839396 U CN203839396 U CN 203839396U CN 201420237360 U CN201420237360 U CN 201420237360U CN 203839396 U CN203839396 U CN 203839396U
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- air inlet
- accommodation space
- ozone generator
- communicated
- homogenizing plate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
A device for preparing anti-PID (potential induced degradation) thin films includes an ozone generator and a box. The box has enclosed accommodation space inside. The ozone generator has a gas outlet, a gas inlet and a gas injection mouth. The gas outlet of the ozone generator is communicated with the accommodation space through a gas intake pipe. The gas inlet of the ozone generator is communicated with the accommodation space through an exhaust pipe. A gas injection pipe is disposed at the gas injection mouth of the ozone generator. A first flow equalizing plate, a cell-carrying plate and a second flow equalizing plate are arranged in the accommodation space. Flow equalizing holes are disposed in both the first flow equalizing plate and the second flow equalizing plate. A replacement gas inlet pipe which is communicated with the accommodation space is also included. The device for preparing anti-PID thin films can rapidly and efficiently prepare anti-PID thin film with no ozone leakage, is suitable for all conventional solar cell production lines, has good maneuverability and practicality, and is adapted to promotion and application.
Description
Technical field
The utility model relates to application of solar, relates in particular to a kind of device for the preparation of anti-PID film.
Background technology
High pressure induction attenuation effect (Potential Induced Degradation is called for short PID effect) is the newer attenuation effect that photovoltaic recent years field occurs.Along with applying gradually of photovoltaic parallel in system, system voltage is more and more higher, and conventional have 600V and a 1000V.Component internal cell piece is more and more higher with respect to the pressure of the earth, and what have even reaches 600-1000V.The aluminium frame of general assembly all requires ground connection, has just formed like this high pressure of 600-1000V between cell piece and aluminium frame.In general, in the lamination process of component package, structure is 5 layers, and cell piece is in the middle of EVA, and glass and backboard are at outermost layer, and in lamination process, EVA has formed material transparent, electric insulation.But, any plastic material is impossible 100% insulation all, and all there is certain conductivity, particularly in the larger environment of humidity, have leakage current and pass through cell piece, at encapsulating material, glass, backboard, aluminium frame, if form high voltage between internal circuit and aluminium frame, leakage current will reach microampere or milliampere rank, the high pressure inductive effect of Here it is solar cell, PID effect worsens battery surface passivation effect and forms loop of electric leakage, causes fill factor, curve factor, open circuit voltage, short circuit current to reduce, and makes assembly property lower than design standard.When serious, PID effect can make component power decline more than 30%.
The key that solves PID problem is to produce the solar battery sheet with anti-PID ability.There are some researches show, between the silicon nitride of conventional crystal silicon solar cell sheet and crystal silicon chip, increasing by a layer dielectric is effective anti-PID means, and wherein, using ozone to make silicon chip surface form one deck silicon oxide film is comparatively economic process reliably.But ozone has certain injury effect to human body.Therefore, design a kind of device for the preparation of anti-PID film, both can make in a large number, fast, equably silicon chip surface form silicon oxide film, realize and avoid ozone leakage in workshop condition again, there is realistic meaning.
Summary of the invention
The utility model object is to provide one both can make silicon chip surface form silicon oxide film in a large number, fast, equably, can avoid again ozone leakage to the device for the preparation of anti-PID film in workshop condition.
For achieving the above object, the technical solution adopted in the utility model is: a kind of device for the preparation of anti-PID film, comprise ozone generator and casing, and in casing, there is airtight accommodation space; Described casing is provided with door;
Described ozone generator has gas outlet, air inlet and gas injection port;
The gas outlet of described ozone generator is communicated with accommodation space by air inlet pipe, and the air inlet of described ozone generator is communicated with accommodation space by blast pipe; The gas injection port place of ozone generator is provided with air injection pipe;
In described accommodation space, be provided with the first homogenizing plate, slide glass plate and the second homogenizing plate, on described the first homogenizing plate and the second homogenizing plate, offer equal discharge orifice; On described slide glass plate, offer pore;
Also be provided with substitution gas air inlet pipe, substitution gas air inlet pipe is communicated with described accommodation space.
Above, described equal discharge orifice is preferably and is uniformly distributed on the first homogenizing plate and the second homogenizing plate.Percent opening on described the first homogenizing plate and the second homogenizing plate is 0.1% ~ 10%.
On described slide glass plate, offer pore, preferred, pore is uniformly distributed on slide glass plate, and percent opening is 10% ~ 99%.
The quantity of described ozone generator is at least 1.
In technique scheme, described ozone generator is ultraviolet ozonizer or electric arc ozone generator.
In technique scheme, also comprise heater.This heater can heat casing, and the temperature range of heating is 15 DEG C ~ 80 DEG C.
In technique scheme, described the first homogenizing plate and the second homogenizing plate horizontal arrangement, the first homogenizing plate is located at the second homogenizing plate top, and the distance at the first homogenizing plate distance described accommodation space top is 3 ~ 15 centimetres, and the distance of the described accommodation space of the second homogenizing plate distance bottom is 3 ~ 15 centimetres.
In technique scheme, described slide glass plate has 1 ~ 5 row, and every row's slide glass plate is all horizontally disposed with, and the superjacent air space of every row's slide glass plate is 18 ~ 40 centimetres, and the distance of below slide glass plate distance the second homogenizing plate is 3 ~ 15 centimetres.
In technique scheme, one end of described air inlet pipe is communicated with the gas outlet of ozone generator, and the other end of air inlet pipe separates at least 2 air inlet isocons, and each air inlet isocon is communicated with accommodation space.Preferably, each air inlet isocon caliber is identical, and length is identical, each air inlet isocon with on accommodation space, be communicated with or lower connection, air inlet isocon with accommodation space be communicated with density be 4 ~ 100 pieces/square metre.
In technique scheme, one end of described blast pipe is communicated with the air inlet of ozone generator, and the other end of blast pipe separates at least 2 exhaust shunt tube, and each exhaust shunt tube is communicated with accommodation space.Preferably, the other end of blast pipe separates exhaust shunt tube, and each exhaust shunt tube caliber is identical, and length is identical, each exhaust shunt tube with under accommodation space, be communicated with or upper connection, air inlet isocon with accommodation space be communicated with density be 4 ~ 100 pieces/square metre.
In technique scheme, the output of described blast pipe separates 2 tunnels; Wherein 1 tunnel is connected with the air inlet of ozone generator, and another 1 tunnel is in communication with the outside.Be in communication with the outside Yi road for exhaust emissions.
Preferably, the gas outlet of described substitution gas air inlet pipe is located on the pipeline of air inlet pipe.
Described casing side can arrange Yishanmen, also can respectively be provided with in both sides Yishanmen, and the quantity of door can arrange according to the needs of actual production.The effect that both sides respectively arrange Yishanmen is to replace traditional pass-through box, make this device can from different production process combinations, and do not take additional space.
Because technique scheme is used, the utlity model has following advantages:
1, the utility model has designed a kind of device for the preparation of anti-PID film, go for all conventional solar cell slice assembly lines at present, this device can directly be processed the silicon chip that is loaded in the large gaily decorated basket or small basket of flowers the inside, without any additional fluctuating plate operation (at present, before solar battery sheet filming process, silicon slice loading is in 100 large gailys decorated basket or be loaded in the small basket of flowers the inside of 25); Therefore can not increase fragment risk;
2, in existing technique, the operation before solar battery sheet plated film has divider wall conventionally, and silicon chip is contained in the gaily decorated basket and transmits by the pass-through box on wall; Device of the present utility model, by a traditional pass-through box of replacement is set, had both met traditional biography sheet demand, had realized again the growth of silicon oxide film; And without taking new space, also without any additional operation;
3, the utility model once can be processed 600 ~ 3000 silicon chips, and 5～30 minutes single treatment time, production capacity is high;
4, experimental results show that: use device of the present utility model, all silicon chips can fully contact with ozone, and the film of preparation is even, ozone free leakage problem;
5, practical application proves, uses anti-film prepared by this device can meet the demand of anti-PID.
Brief description of the drawings
Accompanying drawing 1 is the structural representation of the utility model embodiment.
Wherein: 1, ozone generator; 2, casing; 3, accommodation space; 4, gas outlet; 5, air inlet; 6, air inlet pipe; 7, blast pipe; 8, the first homogenizing plate; 9, slide glass plate; 10, the second homogenizing plate; 11, equal discharge orifice; 12, air inlet isocon; 13, exhaust shunt tube; 14, pore; 15, air injection pipe; 16, substitution gas air inlet pipe; 17, tail comb.
Embodiment
Below in conjunction with drawings and Examples, the utility model is further described:
Embodiment mono-
Shown in Figure 1, a kind of device for the preparation of anti-PID film, comprises ozone generator 1 and casing 2, is formed with airtight accommodation space 3 in casing 2;
Described ozone generator 1 has gas outlet 4, air inlet 5 and gas injection port 15;
On described casing 2, be provided with two fan doors, be opened in respectively on the relative sidewall of casing;
Described gas outlet 4 is communicated with accommodation space 3 by air inlet pipe 6, and described air inlet 5 is communicated with accommodation space 3 by blast pipe 7; The gas injection port place of ozone generator is provided with air injection pipe 15;
In described accommodation space 3, be provided with the first homogenizing plate 8, slide glass plate 9 and the second homogenizing plate 10, on described the first homogenizing plate 8 and the second homogenizing plate 10, offer equal discharge orifice 11, all discharge orifice 11 is uniformly distributed on the first homogenizing plate and the second homogenizing plate;
Also be provided with substitution gas air inlet pipe 16, substitution gas air inlet pipe is communicated with described accommodation space.
Described ozone generator 1 is ultraviolet ozonizer or electric arc ozone generator.
Also comprise the heater that casing is heated, the temperature of heating is 40 DEG C.
Described the first homogenizing plate 8 and the second homogenizing plate 10 horizontal arrangement, the first homogenizing plate 8 is located at the second homogenizing plate 10 tops, the distance at the first homogenizing plate 8 distance described accommodation space 3 tops is 8 centimetres, and the distance of the second homogenizing plate 10 distance described accommodation space 3 bottoms is 8 centimetres.
Described slide glass plate 9 has 2 rows, all horizontal arrangement, and every row's slide glass plate 9 superjacent air spaces are 30 centimetres, the distance of below slide glass plate 9 distance the second homogenizing plates 10 is 10 centimetres.
On described slide glass plate 9, offer pore 14, pore 14 is uniformly distributed on slide glass plate 9, and percent opening is 50%.
One end of described air inlet pipe 6 is connected with the gas outlet 4 of ozone generator 1, and the other end of air inlet pipe 6 separates three air inlet isocons 12, and each air inlet isocon 12 is communicated with described accommodation space 3; Each air inlet isocon 12 calibers are identical, and length is identical.
One end of described blast pipe 7 is connected with the air inlet 5 of ozone generator 1, and the other end of blast pipe 7 separates three exhaust shunt tube 13, and each exhaust shunt tube 13 is communicated with described accommodation space 3; Each exhaust shunt tube 13 calibers are identical, and length is identical.
The output of described blast pipe 7 separates two-way, and a road is connected with the air inlet 5 of described ozone generator 1, and another road is in communication with the outside, for exhaust emissions.
The quantity of described ozone generator 1 can be that one, two are even more.
Percent opening on described the first homogenizing plate 8 and the second homogenizing plate 10 is 1%.
Described air inlet isocon 12 is connected to the top of casing 2 equably, and described exhaust shunt tube 13 is connected to the bottom of casing 2 equably, and the distribution density of air inlet isocon 12 and exhaust shunt tube 13 is 16 pieces/square metre.
The course of work of the present utility model is as follows:
While preparing anti-PID film: open the door of casing 2 one sides, the gaily decorated basket that silicon chip is housed is placed on slide glass plate 9, close the door;
Close substitution gas air inlet pipe 16, open air inlet 5, air injection pipe 15, in air injection pipe 15, pass into oxygen-containing gas, open ozone generator 1, the opening time is 3 ~ 30 minutes;
Close ozone generator, close air inlet 5 and air injection pipe 15, open substitution gas air inlet pipe 16, in substitution gas air inlet pipe 16, pass into compressed air, process continues 3 ~ 15 minutes;
Above-mentioned NM pipeline is in normally open;
Then, open the door of casing 2 opposite sides, the gaily decorated basket that silicon chip is housed is taken out, close the door.
Because technique scheme is used, can prepare quickly and efficiently anti-PID film, ozone free leaks, and is applicable to all existing conventional solar cell slice assembly lines.
Claims (10)
1. for the preparation of a device for anti-PID film, it is characterized in that: comprise ozone generator and casing, in casing, there is airtight accommodation space; Described casing side is provided with door;
Described ozone generator has gas outlet, air inlet and gas injection port;
The gas outlet of described ozone generator is communicated with accommodation space by air inlet pipe, and the air inlet of described ozone generator is communicated with accommodation space by blast pipe; The gas injection port place of ozone generator is provided with air injection pipe;
In described accommodation space, be provided with the first homogenizing plate, slide glass plate and the second homogenizing plate, on described the first homogenizing plate and the second homogenizing plate, offer equal discharge orifice; On described slide glass plate, offer pore;
Also be provided with substitution gas air inlet pipe, substitution gas air inlet pipe is communicated with described accommodation space.
2. the device for the preparation of anti-PID film according to claim 1, is characterized in that: described ozone generator is ultraviolet ozonizer or electric arc ozone generator.
3. the device for the preparation of anti-PID film according to claim 1, is characterized in that: also comprise heater.
4. the device for the preparation of anti-PID film according to claim 1, it is characterized in that: described the first homogenizing plate and the second homogenizing plate horizontal arrangement, the first homogenizing plate is located at the second homogenizing plate top, the first homogenizing plate is 3 ~ 15 centimetres apart from the distance at accommodation space top, and the second homogenizing plate is 3 ~ 15 centimetres apart from the distance of accommodation space bottom.
5. the device for the preparation of anti-PID film according to claim 1, it is characterized in that: described slide glass plate has 1 ~ 5 row, every row's slide glass plate is all horizontally disposed with, and the superjacent air space of every row's slide glass plate is 18 ~ 40 centimetres, and the distance of below slide glass plate distance the second homogenizing plate is 3 ~ 15 centimetres.
6. the device for the preparation of anti-PID film according to claim 1, it is characterized in that: one end of described air inlet pipe is communicated with the gas outlet of ozone generator, the other end of air inlet pipe separates at least 2 air inlet isocons, each air inlet isocon caliber is identical, length is identical, each air inlet isocon with on accommodation space, be communicated with or lower connection, air inlet isocon with accommodation space be communicated with density be 4 ~ 100 pieces/square metre.
7. the device for the preparation of anti-PID film according to claim 1, it is characterized in that: one end of described blast pipe is communicated with the air inlet of ozone generator, the other end of blast pipe separates at least 2 exhaust shunt tube, each exhaust shunt tube caliber is identical, length is identical, each exhaust shunt tube with under accommodation space, be communicated with or upper connection, air inlet isocon with accommodation space be communicated with density be 4 ~ 100 pieces/square metre.
8. the device for the preparation of anti-PID film according to claim 1, is characterized in that: the output of described blast pipe separates 2 tunnels; Wherein 1 tunnel is connected with the air inlet of ozone generator, and another 1 tunnel is in communication with the outside.
9. the device for the preparation of anti-PID film according to claim 1, is characterized in that: the gas outlet of described substitution gas air inlet pipe is located on the pipeline of air inlet pipe.
10. the device for the preparation of anti-PID film according to claim 1, is characterized in that: the both sides of described casing are respectively provided with Yishanmen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420237360.9U CN203839396U (en) | 2014-05-09 | 2014-05-09 | Device for preparing anti-PID (potential induced degradation) thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420237360.9U CN203839396U (en) | 2014-05-09 | 2014-05-09 | Device for preparing anti-PID (potential induced degradation) thin film |
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| Publication Number | Publication Date |
|---|---|
| CN203839396U true CN203839396U (en) | 2014-09-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420237360.9U Expired - Fee Related CN203839396U (en) | 2014-05-09 | 2014-05-09 | Device for preparing anti-PID (potential induced degradation) thin film |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600159A (en) * | 2015-01-22 | 2015-05-06 | 江西瑞晶太阳能科技有限公司 | High-frequency discharge preparation method of rejection PID crystalline silicon cell |
| CN105118894A (en) * | 2015-09-11 | 2015-12-02 | 国网天津市电力公司 | PID-resistant crystalline silicon cell preparation method |
| CN105839194A (en) * | 2016-05-20 | 2016-08-10 | 苏州中世太新能源科技有限公司 | Passivation gas spraying assembly for silicon wafer surface of photovoltaic cell and gas passivation equipment |
| CN107369640A (en) * | 2017-08-10 | 2017-11-21 | 江苏格林保尔光伏有限公司 | The anti-decay surface processing device of solar battery sheet |
| CN109285921A (en) * | 2018-12-03 | 2019-01-29 | 乐山新天源太阳能科技有限公司 | Gas mixing homogenizer for the anti-PID equipment of solar battery |
| CN111118478A (en) * | 2019-12-31 | 2020-05-08 | 湖南红太阳光电科技有限公司 | PECVD equipment for preparing heterojunction battery thin film |
-
2014
- 2014-05-09 CN CN201420237360.9U patent/CN203839396U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600159A (en) * | 2015-01-22 | 2015-05-06 | 江西瑞晶太阳能科技有限公司 | High-frequency discharge preparation method of rejection PID crystalline silicon cell |
| CN105118894A (en) * | 2015-09-11 | 2015-12-02 | 国网天津市电力公司 | PID-resistant crystalline silicon cell preparation method |
| CN105839194A (en) * | 2016-05-20 | 2016-08-10 | 苏州中世太新能源科技有限公司 | Passivation gas spraying assembly for silicon wafer surface of photovoltaic cell and gas passivation equipment |
| CN107369640A (en) * | 2017-08-10 | 2017-11-21 | 江苏格林保尔光伏有限公司 | The anti-decay surface processing device of solar battery sheet |
| CN109285921A (en) * | 2018-12-03 | 2019-01-29 | 乐山新天源太阳能科技有限公司 | Gas mixing homogenizer for the anti-PID equipment of solar battery |
| CN109285921B (en) * | 2018-12-03 | 2024-01-26 | 乐山新天源太阳能科技有限公司 | Gas mixing and homogenizing device for PID (potential induced degradation) resistant equipment of solar cell |
| CN111118478A (en) * | 2019-12-31 | 2020-05-08 | 湖南红太阳光电科技有限公司 | PECVD equipment for preparing heterojunction battery thin film |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140917 Termination date: 20210509 |