CN211788949U - Process cavity of silicon wafer and silicon wafer processing equipment - Google Patents

Abstract

The utility model provides a technology cavity, silicon chip processing equipment and silicon chip processing method of silicon chip, wherein, the technology cavity includes: a housing having a chamber therein; the vacuum gate valve is used for allowing a carrier plate to enter and exit the cavity through the vacuum gate valve, and the carrier plate is used for bearing the silicon wafer; the transmission assembly is used for transmitting the carrier plate; and a plurality of jacking devices are respectively arranged on two sides of the cavity in the inlet and outlet directions of the carrier plate. Through the technical scheme of the utility model, set up the both sides at the cavity with the jacking device to the transmission subassembly that has set up, the support plate of being convenient for is reciprocating transmission in the process chamber, and it is long when long and the turnover of transmission that has reduced the support plate, is favorable to shortening non-process time, has still reduced support plate and atmospheric contact, has promoted the stability of support plate temperature and the cleanliness factor of support plate, is favorable to promoting production efficiency and product quality.

Description

Process cavity of silicon wafer and silicon wafer processing equipment

Technical Field

The utility model relates to a solar cell produces technical field, particularly, relates to a technology cavity and a silicon chip processing equipment of silicon chip.

Background

In the batch preparation process of the silicon wafer films of the solar cells, a plurality of silicon wafers are required to be placed on a support plate, and then the support plate enters process equipment to complete the deposition of the silicon wafer films.

At present, a silicon wafer is loaded in an atmospheric environment by a carrier plate, the silicon wafer is subjected to a device and then a silicon wafer film deposition process is completed, then the silicon wafer is discharged to the external atmosphere for silicon wafer unloading, the carrier plate is subjected to circulation from low temperature to high temperature and then to low temperature, so that a large amount of heat dissipation and cooling enters a cavity again for heating, energy consumption is greatly wasted, the cooling consistency of each carrier plate discharged to the atmospheric environment is difficult to ensure, the temperature consistency of each carrier plate is difficult to ensure, the stability of the process is very unfavorable, the non-process time is prolonged for reheating the carrier plate, and the production efficiency is reduced; in addition, the support plate repeatedly comes in and goes out the outside atmospheric environment of equipment, and dust particle, aqueous vapor etc. can float on the support plate, cause the pollution and the interference of follow-up technology to the silicon chip, are unfavorable for product quality and performance, and in some technology cavitys, the climbing mechanism setting of support plate is central at the cavity, and the space of lower floor's support plate transmission is not convenient for set up to this kind of structure, has reduced production efficiency.

SUMMERY OF THE UTILITY MODEL

The present invention is directed to at least one of the problems of the prior art or the related art.

In view of the above, an object of the present invention is to provide a process chamber for silicon wafer.

Another object of the present invention is to provide a silicon wafer processing apparatus.

Still another object of the present invention is to provide a method for processing silicon wafers.

In order to achieve the above object, the present invention provides a technical solution of a first aspect of a silicon wafer, including: a housing, a chamber being provided in the housing; the vacuum gate valves are respectively arranged on two sides of the shell and are used for sealing the cavity; the carrier plate enters and exits the cavity through the vacuum gate valve and is used for bearing the silicon wafer; the transmission assembly is arranged in the cavity and is used for transmitting the carrier plate; the heating plate is used for bearing a support plate with a silicon wafer and heating the support plate; the jacking device is connected with the heating plate and is used for jacking the heating plate; wherein, in the direction of the support plate, a plurality of jacking devices are respectively arranged on two sides of the cavity.

In the technical scheme, the vacuum gate valves are respectively arranged on the two sides of the shell, so that the process cavity can be conveniently sealed, the process cavity can be vacuumized, the thermal convection in the cavity is reduced, the temperature stability of the carrier plate and the silicon wafer is conveniently kept, the cleanliness in the cavity is also conveniently kept, the pollution to the silicon wafer is reduced, and the process treatment effect is improved; the setting of transmission assembly can let the support plate automatic circulation in the process chamber, and the jacking device sets up in both sides, is favorable to setting up the transmission assembly of multilayer or multirow, promotes the efficiency of support plate transmission and turnover in finite space, reduces non-process time, promotes product production efficiency, and the support plate can transmit through the clearance between the jacking device of both sides moreover.

The carrier plate can enter and exit the cavity through the vacuum gate valve, so that the carrier plate can be moved to other process cavities through the transmission assembly, the silicon wafer can enter different process cavities for processing, the carrier plate does not need to be replaced in the middle process, and the stability of the temperature of the silicon wafer is favorably kept; the heating plate is arranged, so that the carrier plate can be kept at a stable temperature by heating, and the stability and consistency of the temperature of the silicon wafer are improved; the jacking device jacks the heating plate, and the heating plate bears the support plate with the silicon wafer, so that the support plate can lift along with the heating plate, the support plate is convenient to keep continuously heated, and the temperature stability of the support plate and the silicon wafer is ensured; the jacking devices are arranged on two sides of the cavity, the carrier plate can smoothly pass through a gap between the jacking devices on the two sides, so that the purpose of conveying the carrier plate between the process cavity and other process cavities is realized, and the jacking devices are arranged on two sides of the cavity, so that a plurality of layers or rows of conveying assemblies are favorably arranged, the full-load carrier plate and the no-load carrier plate can be conveniently and respectively circulated, the production efficiency is improved, and the non-process time is reduced; the arrangement of the plurality of jacking devices is beneficial to improving the balance when the heating plate is lifted, and the accidents that the silicon wafer falls off and the like caused by the fact that the support plate is inclined are reduced.

In the above technical solution, the transmission assembly includes: the first conveying device is used for conveying the carrier plate; the second transmission device is used for transmitting the carrier plate, the second transmission device is arranged at the bottom of the first transmission device, and the transmission directions of the first transmission device and the second transmission device are opposite.

In the technical scheme, one part of the jacking device extends out of the shell; the process chamber further comprises: the servo motor is arranged outside the shell and connected with the jacking device, and is used for driving the jacking device; each jacking device is connected with a servo motor through the transmission connecting rod and the steering gear; or a synchronous belt and a steering gear which are connected with each other, and each jacking device is connected with the servo motor through the synchronous belt and the steering gear.

In the above technical solution, the jacking device includes a jacking column; the corrugated pipe is arranged in the cavity, part of the jacking column is arranged in the corrugated pipe, and the corrugated pipe is used for sealing the jacking column; the other part of the jacking column extends out of the shell and is connected with a servo motor, and the servo motor is used for driving the jacking column to lift.

In the technical scheme, the jacking device comprises a cam and a dynamic seal, the cam is connected with a servo motor, and the dynamic seal is used for sealing the cam.

In any one of the above technical solutions, the process chamber of the silicon wafer further includes: the heating plate supporting block and the heat insulation cushion block are arranged between the jacking device and the heating plate, the heat insulation cushion block is arranged between the heating plate supporting block and the heat insulation cushion block, the heating plate supporting block is used for supporting the heating plate, and the heat insulation cushion block is used for insulating heat.

In any of the above solutions, the transmission assembly includes a plurality of rollers or belt conveying mechanisms; or the transmission assembly comprises a mechanical arm, a first supporting device and a second supporting device, the first supporting device and the second supporting device are used for supporting the carrier plate, and the mechanical arm is used for moving the carrier plate.

In any one of the above technical solutions, the process chamber of the silicon wafer further includes: and the electrode unit is arranged at the top of the cavity and used for processing the silicon wafer.

The utility model discloses technical scheme of second aspect provides a silicon chip processing equipment, include: the loading and unloading cavity is used for providing loading and unloading space for the silicon wafer; in the process chamber of the silicon wafer in any one of the first aspect, at least one end of the process chamber is connected with a loading and unloading chamber; the material conveying device can enter and exit the loading and unloading cavity and is used for conveying the silicon wafers; and the loading and unloading device is arranged in the loading and unloading cavity and is used for loading and unloading the silicon wafers between the material conveying device and the support plate of the process cavity.

In the technical scheme, by adopting the process cavity of the silicon wafer of any one of the technical schemes, all beneficial effects of the technical scheme are achieved, and further description is omitted; through the arrangement of the material conveying device and the loading and unloading device, the silicon wafers are conveniently conveyed into the loading and unloading cavity for loading and unloading, so that the carrier plate does not need to be transferred to the silicon wafer processing equipment, the contact with the outside atmosphere is reduced, and the temperature stability and the cleanliness of the carrier plate and the silicon wafers on the carrier plate are favorably improved.

Specifically, the material conveying device can enter and exit the loading and unloading cavity, so that the carrier plate can be left in the loading and unloading cavity to avoid contacting with the external atmosphere, namely the carrier plate can load and unload the silicon wafer in the atmospheric environment no longer, but load and unload the silicon wafer in the loading and unloading cavity, thereby reducing the situation that the temperature is greatly reduced when the carrier plate is in the atmospheric environment, being beneficial to keeping the original temperature of the carrier plate, reducing the requirement on heating, being beneficial to saving energy and reducing waste; the carrier plate can keep the original temperature or only reduce the temperature by a small amount, so that the heating time can be reduced, the non-process time can be shortened, and the production efficiency can be improved; the carrier plates can keep the original temperature or only slightly cool, and more uniform temperatures of a plurality of carrier plates can be kept, so that the uniformity of the temperature of the silicon wafers on the carrier plates is improved, and the stability of the processing quality of the silicon wafers is improved; in addition, the carrier plate does not need to be loaded and unloaded to and from the atmospheric environment, and impurities such as dust particles, water vapor and the like attached to the carrier plate can be reduced, so that the pollution to the silicon wafer is reduced, and the quality and the performance of the product are improved.

In the above technical solution, the silicon wafer processing apparatus further includes: the third conveying device is arranged in the loading and unloading cavity and is used for conveying the carrier plate with the first conveying device of the process cavity; the fourth transmission device is arranged in the loading and unloading cavity and is used for transmitting the carrier plate with the second transmission device of the process cavity; and the carrier plate transposition device is used for conveying the carrier plate between the third conveying device and the fourth conveying device or conveying the carrier plate between the first conveying device and the second conveying device.

In the technical scheme, the third transmission device, the fourth transmission device and the support plate transposition device are arranged, so that the circulating circulation of the support plate in the silicon wafer processing equipment is convenient to realize, the circulation efficiency of the support plate is favorably improved, and the non-process time is saved.

The utility model discloses technical scheme of third aspect provides a silicon chip processing method for silicon chip processing equipment in the above-mentioned second aspect, include: acquiring a silicon wafer processing instruction; controlling a first material conveying device to convey silicon wafers into a first loading and unloading cavity according to the silicon wafer processing instruction; controlling a loading and unloading device in the first loading and unloading cavity to transfer the silicon wafer on the first material conveying device to a carrier plate on a third conveying device; controlling a third transmission device to transmit the carrier plate to a first transmission device of the process cavity, and executing the process treatment of the silicon wafer; after the process treatment is finished, controlling the first conveying device to convey the carrier plate to a third conveying device in the second loading and unloading cavity; controlling a loading and unloading device in a second loading and unloading cavity to transfer the silicon wafers on the support plate to a second material conveying device; controlling a second conveying device to convey the silicon wafer out of the second loading and unloading cavity, controlling a carrier plate transposition device in the second loading and unloading cavity to move, and conveying the unloaded carrier plate from a third conveying device to a fourth conveying device in the second loading and unloading cavity; controlling a fourth transmission device in the second loading and unloading cavity to reversely transmit the carrier plate from the second loading and unloading cavity to the fourth transmission device in the first loading and unloading cavity through the second transmission device in the process cavity; and controlling a carrier plate transposition device in the first loading and unloading cavity to transmit the carrier plate from the fourth transmission device to the third transmission device.

In the technical scheme, the silicon wafers are loaded and unloaded in the loading and unloading cavity, so that the carrier plate does not need to be transferred to the outside of the silicon wafer processing equipment, and the contact with the outside atmosphere is reduced, thereby being beneficial to improving the temperature stability and the cleanliness of the carrier plate and the silicon wafers on the carrier plate; the loading and unloading of the silicon wafers on the support plate are respectively carried out at two ends of the process cavity, and the circulation of the support plate is carried out in the silicon wafer processing equipment through the first transmission device, the second transmission device, the third transmission device, the fourth transmission device and the support plate transposition device, so that on one hand, the circulation of the support plate in the silicon wafer processing equipment can be ensured, the circulation efficiency of the support plate can be improved, and the non-process time can be saved.

Additional aspects and advantages of the invention will be set forth in part in the description which follows, or may be learned by practice of the invention.

Drawings

Fig. 1 is a schematic longitudinal sectional structural view of a process chamber and a carrier plate outside the process chamber according to an embodiment of the present invention;

fig. 2 is a schematic longitudinal sectional structural view of a process chamber according to an embodiment of the present invention;

fig. 3 is a schematic cross-sectional structural view of a process chamber according to an embodiment of the present invention;

FIG. 4 is a partial enlarged view of the portion A in FIG. 3;

fig. 5 is a schematic cross-sectional structural view of a process chamber according to an embodiment of the present invention;

FIG. 6 is a partial enlarged view of the portion B in FIG. 5;

fig. 7 is a schematic partial perspective view of a process chamber according to an embodiment of the present invention;

fig. 8 is a schematic cross-sectional structural view of a process chamber according to an embodiment of the present invention;

FIG. 9 is an enlarged partial view of the portion C of FIG. 8;

fig. 10 is a schematic cross-sectional structural view of a process chamber according to an embodiment of the present invention;

FIG. 11 is an enlarged partial view of the portion D of FIG. 10;

fig. 12 is a schematic partial perspective view of a process chamber according to an embodiment of the present invention;

fig. 13 is a schematic longitudinal sectional structural view of a silicon wafer processing apparatus according to an embodiment of the present invention;

FIG. 14 is a schematic view of a loading/unloading chamber of a silicon wafer processing apparatus according to an embodiment of the present invention;

fig. 15 is a schematic process flow diagram of a silicon wafer processing method according to an embodiment of the present invention.

Wherein, the correspondence between the reference numbers and the part names in fig. 1 to 14 is:

10 process chambers, 110 shells, 120 vacuum gate valves, 130 carrier plates, 140 first conveying devices, 150 second conveying devices, 160 heating plates, 170 lifting columns, 172 corrugated pipes, 174 servo motors, 176 transmission connecting rods, 178 diverters, 180 cams, 182 dynamic seals, 184 heating plate supporting blocks, 186 heat insulation cushion blocks, 188 electrode units, 20 first loading and unloading chambers, 200 first hangers, 201 second hangers, 202 silicon wafer lifting mechanisms, 204 carrier plate lifting mechanisms, 206 third conveying devices, 208 fourth conveying devices, 22 second loading and unloading chambers and 30 silicon wafers.

Detailed Description

In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings, which are illustrated in the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.

Some embodiments of the present invention are described below with reference to fig. 1 to 15.

In recent years, the rapid development of solar cell technology, especially the prospect of thin film silicon/crystalline silicon Heterojunction cell (HIT) has been highlighted by various manufacturers and industry experts, because the technology combines the first generation monocrystalline silicon technology with the second generation thin film silicon cell technology, the cell conversion efficiency is greatly improved, and the technology has the characteristics of a double-sided structure, low temperature coefficient (effective output at high temperature), few steps of the whole process, low temperature process, high stability and the like, and becomes the main development direction of the future solar cell technology.

To complete the batch thin film preparation of the silicon wafers, a plurality of silicon wafers are required to be placed on a carrier plate, and then the carrier plate enters a process device (PECVD, Plasma Enhanced Chemical Vapor Deposition (PECVD)) to complete the Deposition of the silicon wafer thin film; the HIT technology is different from the amorphous silicon cell preparation, wherein the film thickness of an intrinsic layer (I layer) and a doped layer (P layer or N layer) is more than 200nm, and the film thickness of an amorphous silicon passivation layer (I layer) and the film thickness of the doped layer (P layer or N layer) of the heterojunction silicon-based solar energy are relatively thin and are about 5nm to 10 nm. Therefore, the time for depositing the film is very short, how to improve the ratio of the film deposition time of the process in the takt time is the key point for releasing the productivity of the equipment, how to reduce the non-process time is the key point for improving the productivity and fully exerting the capacity of the equipment and reducing the cost, wherein how to reduce the heating time of the carrier plate is particularly important for improving the productivity.

At present, the mainstream HIT PECVD carrier plate is discharged to the outside atmosphere for unloading after silicon wafers are loaded in the atmosphere environment by equipment, the silicon wafers are subjected to a silicon wafer film deposition process, the carrier plate is circulated from low temperature to high temperature and then to low temperature, the carrier plate is subjected to a large amount of heat dissipation and cooling and then enters a cavity again for heating, so that the energy consumption is greatly wasted, the consistency of the cooling of each carrier plate from the outside to the atmosphere environment is difficult to ensure, the temperature consistency of each carrier plate is difficult to ensure, and the stability of the process is very unfavorable. How to ensure the temperature maintenance (less temperature reduction) of the carrier plate in the recycling process is also important for the process stability and the energy consumption reduction.

The HIT technology is different from the traditional crystalline silicon battery which adopts a diffusion method to prepare PN junctions, but prepares PN junctions on the surface of a silicon wafer, so that the requirement on the state of the surface of the silicon wafer is extremely high, and the key is that the protection on the surface of the silicon wafer is realized in the whole process from the silicon wafer after texturing to the PECVD working section, and the final product quality is realized. One important step is the contamination of the carrier plate to the surface of the silicon wafer, and how to keep the carrier plate clean in the recycling process is very important.

The traditional HIT PECVD method generally enables a carrier plate with a silicon wafer to enter equipment from an atmospheric environment through a wafer inlet cavity, then the carrier plate enters a vacuum environment through the atmosphere and vacuum isolation of the wafer inlet cavity, the carrier plate enters the vacuum environment, is preheated and then enters one or more process cavities to carry out corresponding film layer preparation, the carrier plate bearing the prepared film layer reenters the atmospheric environment through a wafer outlet cavity to carry out silicon wafer unloading, and a no-load plate which finishes the silicon wafer unloading can return to a silicon wafer loading area through a return transmission channel below the equipment or a return transmission channel at the side of the equipment to carry out the recycling of the carrier plate. The carrier plate can be influenced by air convection heat dissipation when entering the atmospheric environment, the path of the carrier plate returning to the transmission channel is long, the carrier plate can return to the equipment again after waiting for a plurality of stations after going out of the atmospheric environment, the cycle time is too long, and therefore the temperature of the carrier plate can be obviously reduced. Usually, the temperature of the waste gas is reduced to about 50 ℃ from about 180 ℃ of the waste gas discharged from the equipment after circulation in the atmospheric environment. The carrier plate carries the silicon chip and needs rapid heating again before the next process, which causes energy consumption waste. After the carrier plate reenters the atmospheric environment from the vacuum environment, dust particles can float on the carrier plate, and the carrier plate can adsorb gas and moisture in the atmospheric environment again to cause pollution to the silicon chip and interference to subsequent processes, which is not beneficial to the promotion and stability of product quality and performance.

In order to solve the above problems of the HIT battery in the preparation of the PECVD workshop section, the utility model provides a process cavity of PECVD equipment, the PECVD equipment adopting the process cavity can realize that the support plate can be always kept in the vacuum cavity for recycling.

As shown in fig. 1 to 12, a process chamber 10 for a silicon wafer according to an embodiment of the present invention includes a housing 110, a vacuum gate valve 120, a carrier plate 130, a transfer assembly, a heating plate 160, and a jacking device.

Specifically, a chamber is arranged in the housing 110, as shown in fig. 2, two sides of the housing 110 are respectively provided with a vacuum gate valve 120, and the vacuum gate valves 120 are used for sealing the chamber; a carrier plate 130 enters and exits the chamber through the vacuum gate valve 120, and the carrier plate 130 is used for carrying a silicon wafer; the transmission assembly is arranged in the chamber and is used for transmitting the carrier plate 130; as shown in fig. 2, 3 and 4, a heating plate 160 is also disposed in the chamber, the heating plate 160 is used for carrying the carrier plate 130 with the silicon wafer and heating the carrier plate 130 with the silicon wafer; a lifting device connected to the heating plate 160 and used for lifting the heating plate 160; wherein, in the direction of the carrier 130, a plurality of jacking devices are respectively disposed on two sides of the cavity.

In this embodiment, the vacuum gate valves 120 are respectively disposed on two sides of the housing 110, so as to facilitate sealing the process chamber 10, further perform vacuum pumping on the process chamber 10, and reduce thermal convection in the chamber, thereby facilitating maintaining the temperature stability of the carrier plate 130 and the silicon wafer, and facilitating maintaining cleanliness in the chamber, thereby reducing contamination of the silicon wafer and improving the process effect; the transmission components are arranged, so that the carrier plate 130 can automatically flow in the process cavity, the jacking devices are arranged on two sides, the arrangement of multi-layer or multi-row transmission components is facilitated, the transmission and turnover efficiency of the carrier plate 130 is improved in a limited space, the non-process time is reduced, and the production efficiency of products is improved; and the carrier plate 130 can be transmitted through the gap between the jacking devices at both sides, avoiding interference with the jacking devices.

The carrier plate 130 can enter and exit the chamber through the vacuum gate valve 120, so that the carrier plate 130 can be moved to other process chambers through the transmission assembly, and the silicon wafer can enter different process chambers 10 for processing, and the carrier plate 130 does not need to be replaced in the middle process, which is beneficial to maintaining the stability of the temperature of the silicon wafer; the heating plate 160 is arranged to keep the temperature of the carrier plate 130 stable by heating, so as to improve the stability and consistency of the temperature of the silicon wafer; the jacking device jacks the heating plate 160, and because the heating plate 160 bears the support plate 130 with the silicon wafer, the support plate 130 can lift along with the heating plate 160, so that the support plate 130 can be continuously heated, and the temperature stability of the support plate 130 and the silicon wafer is ensured; the jacking devices are respectively arranged on two sides of the cavity, the support plate 130 can smoothly pass through the gap between the jacking devices on the two sides, so that the purpose of conveying the support plate 130 between the process cavity 10 and other process cavities is realized, and the jacking devices are arranged on the two sides of the cavity, so that a plurality of layers or rows of conveying assemblies can be arranged, the full-load support plate and the no-load support plate can be conveniently and respectively circulated, the production efficiency is improved, and the non-process time is reduced; the arrangement of the plurality of jacking devices is beneficial to improving the balance when the heating plate 160 is lifted and lowered, and the accidents that the silicon wafer falls off and the like caused by the fact that the support plate 130 is inclined are reduced.

It is understood that the direction of the carrier 130 in and out refers to the direction indicated by the line between the two vacuum gate valves 120, i.e., the direction from one vacuum gate valve 120 to the other vacuum gate valve 120; in the entering and exiting direction of the carrier plate 130, a plurality of jacking devices are respectively arranged on two sides of the cavity, that is, in the transverse direction of the entering and exiting direction of the carrier plate 130, a plurality of jacking devices are respectively arranged on two sides of the cavity; it is also understood that the chamber has a front side and a back side, each of which is provided with a vacuum gate valve 120, and the in-out direction of the carrier plate 130, i.e., the front-back direction of the chamber; for front side and rear side, the cavity still has left side and right side, and on the business turn over direction of support plate 130, the both sides of cavity are equipped with a plurality of jacking devices respectively, just also can understand that the left side of cavity is equipped with a plurality of jacking devices, and the right side of cavity also is equipped with a plurality of jacking devices.

In the above embodiment, the distance between the jacking devices respectively located at the two sides of the chamber in the direction transverse to the entering and exiting direction of the carrier 130 is greater than the width of the carrier 130 in the direction transverse to the entering and exiting direction, that is, the distance between the jacking device at one side and the jacking device at the other side in the direction transverse to the entering and exiting direction of the carrier 130 is greater than the width of the carrier 130 in the direction transverse to the entering and exiting direction, so as to facilitate the transportation of the carrier 130 and avoid interference.

Further, in the above embodiment, the transmission assembly includes: a first conveying device 140 for conveying the carrier board 130; a second transfer device 150 for transferring the carrier plates 130, wherein the second transfer device 150 is disposed at the bottom of the first transfer device 140, and the transfer directions of the first transfer device 140 and the second transfer device 150 are opposite, so that the carrier plates 130 with the silicon wafers 30 and the empty carrier plates 130 can be conveniently and separately transported, the first transfer device 140 can be used for transferring the carrier plates 130 with the silicon wafers 30, and the second transfer device 150 is used for transferring the empty carrier plates 130; of course, it is also possible to transport the carrier plate 130 with the silicon wafer 30 to be processed and the carrier plate 130 with the processed silicon wafer 30 separately, for example, the first transport device 140 is used to transport the carrier plate 130 with the silicon wafer 30 to be processed, and the second transport device 150 is used to transport the carrier plate 130 with the processed silicon wafer 30.

As shown in fig. 3 and 5, in the above embodiment, the process chamber 10 of the silicon wafer further includes: and the servo motor 174 is arranged outside the shell 110 and connected with the jacking device, and the servo motor 174 is used for driving the jacking device.

In this embodiment, the servo motor 174 is adopted to drive the jacking device, which is beneficial to the automation level of the lifting equipment.

As shown in fig. 3, in the above embodiment, the process chamber 10 of the silicon wafer further includes: each jacking device is connected with the servo motor 174 through the transmission connecting rod 176 and the steering gear 178, so that the number of the servo motors 174 can be reduced, one servo motor 174 can drive a plurality of jacking devices, and the plurality of jacking devices can be ensured to synchronously lift, so that the balance of the support plate 130 is favorably ensured, and the silicon wafer falling caused by the deflection in the lifting process is avoided.

Specifically, each jacking device is connected with a transmission connecting rod 176, the servo motor 174 is provided with the transmission connecting rod 176, the transmission connecting rod 176 connected to the jacking device and the transmission connecting rod 176 on the servo motor 174 are connected through a steering gear 178, so that the torque of the servo motor 174 can be steered through the steering gear 178 and then transmitted to the jacking device through the transmission connecting rod 176, the jacking device acts to drive the heating plate 160 to drive the support plate 130 to lift.

In other embodiments, a synchronous belt is connected to each jacking device, a synchronous belt is also arranged on the servo motor 174, the synchronous belt connected to the jacking device and the synchronous belt connected to the servo motor 174 are connected through the steering gear 178, and as a result, synchronous lifting of a plurality of jacking devices can be ensured.

As shown in fig. 3 and 4, in any of the above embodiments, the jacking device comprises a jacking post 170; a bellows 172 disposed in the chamber, wherein a portion of the jacking leg 170 is disposed in the bellows 172, and the bellows 172 is configured to seal the jacking leg 170; another portion of the lifting column 170 extends out of the housing 110 and is connected to a servo motor 174, and the servo motor 174 is used for driving the lifting column 170 to ascend and descend.

In this embodiment, the bellows 172 and the jacking column 170 are arranged, so that the lifting process of the jacking column 170 is performed in the bellows 172, which is beneficial to reducing fine particles generated by friction and wear when the jacking column 170 is lifted and lowered into a chamber, thereby reducing pollution to a silicon wafer and improving the quality and performance of a product, and the jacking column 170 moves along a straight line to push the heating plate 160 and the carrier plate 130 to lift and lower, so that the moving direction of the jacking column 170 is consistent with the lifting direction of the heating plate 160, which is beneficial to reducing the lateral stress of the jacking column 170, improving the smoothness and balance of the carrier plate 130 in the lifting process, and reducing the vibration of the silicon wafer; a part of the jacking pillars 170 is connected to the servo motor 174 outside the housing 110, that is, the servo motor 174 is disposed outside the housing 110, so as to reduce the volume of the housing 110 and the occupied space, reduce the volume of the chamber in the housing 110, reduce the workload of vacuum pumping of the chamber, and also facilitate maintaining the temperature stability of the carrier plate 130 and the silicon wafer.

Fig. 3 and 4 show the lowered state of the jacking leg 170, when the bellows 172 is compressed; fig. 5 and 6 show the raised state of the jacking leg 170, with the bellows 172 relaxed.

As shown in fig. 8 to 12, in any of the above embodiments, the jacking device includes a cam 180 and a dynamic seal 182, the cam 180 is connected with the servo motor 174, and the dynamic seal 182 is used for sealing the cam 180, so that the jacking device occupies a small space, which is beneficial to reducing the volume of the chamber, reducing the difficulty of vacuum pumping, and maintaining the vacuum state in the chamber.

Fig. 8 and 9 show a state in which the cam 180 rotates to raise the heating plate 160; fig. 10 and 11 show a state in which the cam 180 rotates to lower the heating plate 160.

As shown in fig. 4, 7, and 12, in any of the above embodiments, the process chamber 10 of the silicon wafer further includes: the heating plate supporting block 184 and the heat insulation pad 186 are disposed between the jacking device and the heating plate 160, the heat insulation pad 186 is disposed between the heating plate supporting block 184 and the heat insulation pad 186, the heating plate supporting block 184 is used for supporting the heating plate 160, and the heat insulation pad 186 is used for heat insulation.

In this embodiment, by providing the heating plate supporting block 184, it is convenient to increase the contact area of the jacking device and the heating plate 160, thereby improving the stability of supporting the heating plate 160 and the carrier plate 130; through setting up thermal-insulated cushion 186, be favorable to reducing the heat transfer between jacking device and the hot plate 160, both can promote the homogeneity of the temperature on the hot plate 160 to promote the homogeneity of support plate 130 temperature, can also reduce calorific loss, reduce the energy waste, realize energy saving and consumption reduction.

As shown in fig. 1 and 2, in any of the above embodiments, the conveying assembly includes a plurality of rollers, the plurality of rollers are divided into an upper layer and a lower layer, the upper layer of the plurality of rollers forms the first conveying device 140, and the lower layer of the plurality of rollers forms the second conveying device 150; the rollers on each layer are arranged in the cavity symmetrically by taking a connecting line between one vacuum gate valve 120 and the other vacuum gate valve 120 as a symmetry axis, and are fixedly connected with the wall of the cavity through a fixing device, at least the rollers on the upper layer have a contraction function, the rollers can realize the function of conveying the carrier plate 130 and can also support the carrier plate 130, the bearing capacity is strong, the carrier plate 130 with larger volume can be conveniently supported, the number of components can be reduced, the structure in the cavity is simplified, and the rollers rotate in situ in the roller conveying mode without extra movable space, so that the space occupied by the shell 110 is favorably reduced; in addition, the rollers can be driven independently and can also roll synchronously through the transmission parts, and the driving mode is flexible and easy to maintain.

In other embodiments, the transfer assembly includes a belt conveying mechanism, and the first conveyor 140 and the second conveyor 150 of the transfer assembly are both belt conveying mechanisms, so that the carrier plate 130 can be transferred and supported without additional moving space.

In still other embodiments, the first transfer device 140 and the second transfer device 150 are both manipulators, so as to directly grasp the carrier plate 130, and further, the manipulators can replace the jacking devices to some extent, and also play a role of reducing components, and it can be understood that, when the manipulators are adopted, the transfer assembly further comprises: the first supporting device is used for supporting the carrier plate 130 with the silicon wafer, the second supporting device is used for supporting the empty carrier plate 130, and the second supporting device is arranged at the bottom of the first supporting device, so that the carrier plate 130 can be temporarily supported by the first supporting device and the second supporting device, and the robot can conveniently switch the carrier plate 130.

In any of the above embodiments, as shown in fig. 2, the process chamber 10 for processing silicon wafers further comprises an electrode unit 188 disposed at the top of the chamber, wherein the electrode unit 188 is used for processing the silicon wafers.

As shown in fig. 13, an embodiment of the second aspect of the present invention provides a silicon wafer processing apparatus, including: a first loading and unloading cavity 20 and a second loading and unloading cavity 22 which are used for providing loading and unloading space for the silicon wafers; in the silicon wafer process chamber 10 according to any one of the first aspect, there are a plurality of process chambers 10, among the plurality of process chambers 10, the process chamber 10 located at the beginning of the process route is connected to a first loading and unloading chamber 20, and the process chamber 10 located at the end of the process route is connected to a second loading and unloading chamber 22; the material transporting device comprises a first hanger 200 and a second hanger 201, the first hanger can enter and exit the first loading and unloading cavity 20, the second hanger 201 can enter and exit the second loading and unloading cavity 22, and the material transporting device is used for transporting the silicon wafer 30; the loading and unloading device, such as a silicon wafer jacking mechanism 202, the first loading and unloading cavity 20 and the second loading and unloading cavity 22 are respectively provided with a silicon wafer jacking mechanism 202, and the silicon wafer jacking mechanism 202 is used for loading and unloading the silicon wafer 30 between the material conveying device and the support plate of the process cavity 10; a third transfer device 206, wherein the first loading and unloading chamber 20 and the second loading and unloading chamber 22 are respectively provided with the third transfer device 206, and the third transfer device 206 is used for transferring the carrier plate 130 with the first transfer device 140 of the process chamber 10; a fourth transfer device 208, wherein the fourth transfer device 208 is disposed in each of the first loading and unloading chamber 20 and the second loading and unloading chamber 22, the fourth transfer device 208 is used for transferring the carrier plates 130 with the second transfer device 150 of the process chamber 10, and correspondingly, the fourth transfer device 208 is disposed at the bottom of the third transfer device 206; a carrier plate lift-up mechanism 204 is disposed in each of the carrier plate indexing device, such as the carrier plate lift-up mechanism 204, the first loading/unloading chamber 20 and the second loading/unloading chamber 22, and the carrier plate lift-up mechanism 204 is used for conveying carrier plates between the third conveying device 206 and the fourth conveying device 208.

In this embodiment, by using the process chamber 10 of the silicon wafer 30 of any one of the embodiments, all the beneficial effects of the embodiments are achieved, and are not described herein again; through the arrangement of the material conveying device and the loading and unloading device, the silicon wafer 30 is conveniently conveyed to the first loading and unloading cavity 20 or the second loading and unloading cavity 22 for loading and unloading, so that the carrier plate is recycled in the vacuum environment of the silicon wafer processing equipment without being transferred to the outside of the silicon wafer processing equipment, and the contact with the outside atmosphere is reduced, thereby being beneficial to improving the temperature stability and the cleanliness of the carrier plate and the silicon wafer 30 on the carrier plate; through the arrangement of the third transmission device 206, the fourth transmission device 208 and the carrier plate transposition device, the carrier plate can be circularly transferred in the vacuum environment in the silicon wafer processing equipment, the transfer efficiency of the carrier plate can be improved, and the non-process time can be saved.

It is understood that the material transporting device is not limited to the first hanger 200 and the second hanger 201, and may be any one of a suction cup and a manipulator; similarly, the handling device is not limited to the silicon wafer lifting mechanism 202, and may be a robot, a suction cup, or the like; the carrier plate transposition device can also be a mechanical arm, a suction cup or other transportation mechanisms.

Specifically, the first hanger 200 can enter and exit the first loading and unloading cavity 20, and the second hanger 201 can enter and exit the second loading and unloading cavity 22, so that the carrier 130 can be left in the silicon wafer processing equipment to avoid contacting with the external atmosphere, that is, the carrier 130 can no longer load and unload the silicon wafer 20 in the atmospheric environment, but load and unload the silicon wafer 30 in the first loading and unloading cavity 20 or the second loading and unloading cavity 22, thereby reducing the situation that the temperature is greatly reduced when the carrier 130 enters the atmospheric environment, being beneficial to the carrier 130 to maintain the original temperature, reducing the demand on heating, being beneficial to saving energy and reducing waste; in addition, the carrier plate 130 can keep the original temperature or only reduce the temperature by a small amount, so that the heating time can be reduced, the non-process time can be shortened, and the production efficiency can be improved; the carrier plates 130 can keep the original temperature or only slightly cool down, and more uniform temperatures of a plurality of carrier plates 130 can be kept, so that the uniformity of the temperatures of the silicon wafers on the carrier plates 130 is improved, and the stability of the processing quality of the silicon wafers is improved; in addition, the carrier plate 130 does not need to be loaded and unloaded to and from the atmospheric environment, and impurities such as dust particles and moisture attached to the carrier plate 130 can be reduced, so that pollution to the silicon wafer 30 is reduced, and the product quality and performance can be improved.

As shown in fig. 14, more specifically, in the above embodiment, the handling apparatus includes a silicon wafer lift-up mechanism 202 arranged to be lifted up and down, the silicon wafer lift-up mechanism 202 being used to lift up the silicon wafer 30 and transfer the silicon wafer 30 between the material transporting apparatus and the carrier plate 130; therefore, the silicon wafer 30 on the material conveying device can be lifted by the silicon wafer jacking mechanism 202, so that the silicon wafer 30 is separated from the material conveying device, the carrier plate 130 is lifted by the carrier plate jacking mechanism 204, and meanwhile, the silicon wafer jacking mechanism 202 descends, so that the silicon wafer 30 falls onto the carrier plate 130, and the transfer of the silicon wafer 30 between the material conveying device and the carrier plate 130 is realized; it can be understood that a plurality of through holes are formed on the carrier plate 130 to avoid the jacking pillars on the silicon wafer jacking mechanism 202.

When the carrier plate jacking mechanism 204 drives the empty carrier plate to move upwards, the first conveyor 140 retracts, and when the carrier plate 130 is higher than the first conveyor 140, the first conveyor 140 extends out, and the carrier plate jacking mechanism 204 descends, so that the carrier plate 130 falls onto the first conveyor 140 for further conveyance, and the silicon wafer 30 is conveyed to the next chamber.

In other embodiments, a plurality of process chambers 10 are connected to each other, only the process chamber 10 at the beginning of the process route is connected to the first loading/unloading chamber 20, a carrier plate transposition device, i.e., a carrier plate jacking mechanism 204, is disposed in the process chamber 10 at the end of the process route and is used for transporting the carrier plate 130 between the first transporting device 140 and the second transporting device 150, the silicon wafer 30 after the process treatment is reversely transferred back to the process chamber 10 at the beginning of the process route along with the carrier plate 130 and then to the first loading/unloading chamber 20, the carrier plate 130 transported to the fourth transporting device 208 is transported to the third transporting device 206 by the carrier plate transposition device in the first loading/unloading chamber 20, and then the silicon wafer 30 is taken off from the carrier plate 130 by the loading/unloading device (the silicon wafer jacking mechanism 202) and is transported to the second hanger 201.

In other embodiments, there is only one process chamber 10, and the process chamber 10 has a first loading/unloading chamber 20 and a second loading/unloading chamber 22 at its two ends.

It is understood that the first and second load lock chambers 20, 22 are identical in construction, but differ in location.

As shown in fig. 15, an embodiment of the third aspect of the present invention provides a silicon wafer processing method for the silicon wafer processing apparatus in the second aspect, including:

step S100: acquiring a silicon wafer processing instruction;

step S102: controlling a first hanger to carry the silicon wafer into a first loading and unloading cavity according to the silicon wafer processing instruction;

step S104: controlling a silicon wafer jacking mechanism in the first loading and unloading cavity to transfer the silicon wafer on the first hanging tool to a support plate on a third transfer device;

step S106: controlling a third transmission device to transmit the carrier plate to a first transmission device of the process cavity, and executing the process treatment of the silicon wafer;

step S108: after the process treatment is finished, controlling the first conveying device to convey the carrier plate to a third conveying device in the second loading and unloading cavity;

step S110: controlling a silicon wafer jacking mechanism in the second loading and unloading cavity to transfer the silicon wafer on the support plate to a second hanger;

step S112: controlling a second hanger to convey the silicon wafer out of the second loading and unloading cavity, controlling a support plate jacking mechanism in the second loading and unloading cavity to move, and conveying the unloaded support plate from the third conveying device to a fourth conveying device in the second loading and unloading cavity;

step S114: controlling a fourth transmission device in the second loading and unloading cavity to reversely transmit the carrier plate from the second loading and unloading cavity to the fourth transmission device in the first loading and unloading cavity through the second transmission device in the process cavity;

step S116: and controlling a carrier plate jacking mechanism in the first loading and unloading cavity to transfer the carrier plate from the fourth conveying device to the third conveying device.

In the embodiment, the silicon wafers are loaded and unloaded in the loading and unloading cavity, so that the carrier plate does not need to be transferred to the outside of the silicon wafer processing equipment, and the contact with the outside atmosphere is reduced, thereby being beneficial to improving the temperature stability and cleanliness of the carrier plate and the silicon wafers on the carrier plate; the loading and unloading of the silicon wafers on the support plate are respectively carried out at the two ends of the process cavity, and the circulation of the support plate is carried out in the silicon wafer processing equipment through the first transmission device, the second transmission device, the third transmission device, the fourth transmission device and the support plate jacking mechanism, so that on one hand, the circulation of the support plate in the silicon wafer processing equipment can be ensured, the circulation efficiency of the support plate can be promoted, and the non-process time can be saved.

In order to further understand the utility model, the inside circulation production line of the vacuum cavity of the support plate realized by the present invention is necessarily illustrated with reference to fig. 13. The placement of the silicon wafer 30 onto the carrier plate 130 or the unloading of the silicon wafer having completed the film deposition from the carrier plate 130 are performed under the silicon wafer loading vacuum chamber (first loading and unloading chamber 20) and the silicon wafer vacuum unloading chamber (second loading and unloading chamber 22), respectively.

As shown in fig. 14, taking the example of placing the silicon wafer 30 on the carrier plate 130, the first hanger 200 for loading the silicon wafer 30 under the atmosphere enters the loading vacuum chamber of the silicon wafer 30, then the silicon wafer jacking mechanism 202 ascends to lift the silicon wafer 30 to separate from the supporting surface of the first hanger 200, the first hanger 200 withdraws from the loading vacuum chamber (the first loading and unloading chamber 20) of the silicon wafer, the silicon wafer jacking mechanism 202 descends, and simultaneously the carrier plate jacking mechanism 204 ascends to drop the silicon wafer 30 into the groove of the carrier plate 130 at one time, so as to achieve the purpose of loading the silicon wafer 30 on the carrier plate 130. The unloading of the silicon wafer 30 in the wafer unloading chamber (the second loading and unloading chamber 22) can be performed in reverse order. Therefore, the carrier plate 130 can be recycled in the vacuum transmission between the silicon wafer loading vacuum chamber and the silicon wafer vacuum unloading chamber, and the carrier plate 130 is kept from leaving the atmospheric environment.

The process chamber 10 for silicon wafers according to the embodiments of the present application has the following features:

(1) the jacking means of the heating plate 160 is disposed at the side to leave a space for transporting the lower carrier plate 130.

(2) The upper and lower double-layer rollers, i.e., the first transmission device and the second transmission device, can realize the simultaneous transmission of the upper and lower carrier plates 130.

(3) Since the lifting device of the heating plate 160 is disposed at the side, when the upper layer carrier 130 reaches the process position after being lifted by the heating plate 160 for process deposition, the lower layer can store one carrier 130 at the same time.

(4) The lower layer is used as a transmission channel for returning the carrier plate 130, so that after the carrier plate 130 finishes unloading the silicon wafer in the vacuum chamber, the idle plate 130 can flow back to the vacuum process chamber 10 through the lower layer of rollers for loading the silicon wafer.

(5) The carrier plate 130 is always located in the vacuum cavity during the circulation process, the temperature of the carrier plate 130 is effectively maintained, the carrier plate 130 can not adsorb the gas in the atmospheric environment, and the influence of atmospheric dust on the cleanliness of the carrier plate 130 is also avoided.

The first embodiment:

as shown in fig. 1 and 2, the process chamber 10 has upper and lower two-layer conveying devices, and before the carrier 130 is transferred into the process chamber 10, the vacuum gate valves 120 on both sides of the carrier 10 are opened, and the heating plate 160 for lifting the upper carrier 130 is lowered to be lower than the upper first conveying device 140 by using a conveying method such as a roller or a belt.

As shown in fig. 1, the upper carrier 130 carries the silicon wafer 30 to be subjected to film deposition in the process chamber 10, and enters the process chamber 10 from the left side to the right side along the direction indicated by the hollow arrow, and the lower carrier 130 unloads the silicon wafer, is in an idle state, and enters the process chamber 10 from the right side to the left side along the direction indicated by the dotted hollow arrow. Two layers of carrier boards 130 can enter the process chamber 10 through the transfer device at the same time, that is, the upper layer of carrier board 130 enters the process chamber 10 from the left side through the first transfer device 140, and the lower layer of carrier board 130 enters the process chamber 10 from the right side through the second transfer device 150; then, the vacuum gate valves 120 on both sides of the process chamber 10 are closed, the lifting device drives the heating plate 160 to ascend, so as to lift the carrier 130 on the first conveying device 140 to the height of the film deposition position (process position), and the height of the process position can be adjusted by the ascending and descending height position of the heating plate 160, as shown in fig. 2, this height position determines the distance D between the carrier 130 and the upper rf electrode plate, that is, the distance D from the electrode unit 188, and the size of the distance D is related to the final deposition quality.

It is understood that the transfer of the carrier plate 130 in the process chamber 10 may be performed by means of a robot disposed in a unit at both sides of the process chamber 10, and only the first and second supporting means may be disposed instead of the first and second transferring means 140 and 150, respectively, at the positions of the first and second transferring means 140 and 150 shown in fig. 2.

As shown in fig. 3 to 6, in the process chamber 10, the synchronous lifting/lowering jacking pillars 170 are disposed on two sides of the chamber to achieve the lifting/lowering scheme of the carrier plate 130, four (or more) jacking pillars 170 are respectively sealed with the vacuum chamber by four bellows 172 to achieve dynamic vacuum, the four jacking pillars 170 support the heating plate 160 through the heating plate supporting block 184 and the heat insulation pad 186, and the synchronous lifting/lowering transmission mechanism is located in the atmospheric environment, i.e., the transmission link 176 and the diverter 178; in order to ensure the synchronous operation of the four jacking pillars 170, the present embodiment uses a servo motor 174 to realize the synchronous lifting of the four jacking pillars 170 through a transmission link 176 and a power commutator and lifter.

The four synchronous lifting columns 170 leave a space in the width direction of the carrier 130 (perpendicular to the transport direction of the carrier 130, or the in-out direction) larger than the width of the carrier 130, so that the carrier 130 can transport by using the space.

The second embodiment:

as shown in fig. 8 to 12, four (or more) cams 180 provided at both sides of the chamber support the heating plate 160 through a heating plate supporting block 184 and a heat insulating spacer 186. The four cams 180 rotate synchronously to achieve different height positions of the carrier plate 130. The rotation of the cams 180 may be achieved by driving each cam 180 with a single servo motor 174, or by externally implementing power transmission through a transmission link 176, a timing belt, etc., so that the synchronous lifting function can be implemented by driving one servo motor 174. The rotary dynamic seal 182 of the cam 180 can be a magnetic fluid seal or a rubber seal dynamic seal 182. The transmission path and the manner of the carrier board 130 are the same as those of the first embodiment, and will not be described again.

Above combine the figure to describe in detail the technical scheme of the utility model, through the utility model discloses a technical scheme sets up the both sides at the cavity with the jacking device to the transmission assembly who has set up, the support plate of being convenient for is reciprocating transmission in the process chamber, and it is long when long with the turnover to have reduced the transmission of support plate, is favorable to shortening non-process time, has still reduced support plate and atmospheric contact, has promoted the stability of support plate temperature and the cleanliness factor of support plate, thereby is favorable to promoting production efficiency and product quality.

In the present application, the terms "first", "second", are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the term "plurality" means two or more unless expressly limited otherwise. The terms "mounted," "connected," "fixed," and the like are to be construed broadly, and for example, "connected" may be a fixed connection, a removable connection, or an integral connection; "coupled" may be direct or indirect through an intermediary. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the description of the present invention, it should be understood that the terms "upper", "lower", "left", "right", "front", "back", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or unit indicated must have a specific direction, be constructed and operated in a specific orientation, and therefore, should not be construed as limiting the present invention.

In the description of the present specification, the description of the terms "one embodiment," "some embodiments," "specific embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A process chamber of a silicon wafer is characterized by comprising:

a housing having a chamber therein;

the vacuum door valve is arranged on each of two sides of the shell and used for sealing the cavity;

the carrier plate enters and exits the chamber through the vacuum gate valve, and the carrier plate is used for carrying a silicon wafer;

the transmission assembly is arranged in the cavity and is used for transmitting the carrier plate;

the heating plate is used for bearing the support plate with the silicon wafer and heating the support plate;

the jacking device is connected with the heating plate and is used for jacking the heating plate;

and a plurality of jacking devices are respectively arranged on two sides of the cavity in the entering and exiting direction of the carrier plate.

2. The process chamber for silicon wafers of claim 1,

the transmission assembly includes: the first conveying device is used for conveying the carrier plate;

the second transmission device is used for transmitting the carrier plate, the second transmission device is arranged at the bottom of the first transmission device, and the transmission directions of the first transmission device and the second transmission device are opposite.

3. The process chamber for the silicon wafer of claim 2, further comprising:

the servo motor is connected with the jacking device and is used for driving the jacking device;

each jacking device is connected with the servo motor through the transmission connecting rod and the steering gear; or

The synchronous belt and the steering gear are connected with each other, and each jacking device passes through the synchronous belt and the steering gear is connected with the servo motor.

4. The process chamber for silicon wafers of claim 3,

the jacking device comprises a jacking column;

the corrugated pipe is arranged in the cavity, part of the jacking column is arranged in the corrugated pipe, and the corrugated pipe is used for sealing the jacking column;

and the other part of the jacking column extends out of the shell and is connected with the servo motor, and the servo motor is used for driving the jacking column to lift.

5. The process chamber for silicon wafers of claim 3,

the jacking device comprises a cam and a dynamic seal, the cam is connected with the servo motor, and the dynamic seal is used for sealing the cam.

6. The process chamber for the silicon wafer of any one of claims 1 to 5, further comprising:

the heating plate supporting block and the heat insulation cushion block are arranged between the jacking device and the heating plate, the heat insulation cushion block is arranged between the heating plate supporting block and the heat insulation cushion block, the heating plate supporting block is used for supporting the heating plate, and the heat insulation cushion block is used for insulating heat.

7. The process chamber for silicon wafers according to any one of claims 1 to 5,

the conveying assembly comprises a plurality of roller or belt conveying mechanisms, or

The transmission assembly comprises a mechanical arm, a first supporting device and a second supporting device, the first supporting device and the second supporting device are used for supporting the carrier plate, and the mechanical arm is used for moving the carrier plate.

8. The process chamber for the silicon wafer of any one of claims 1 to 5, further comprising:

and the electrode unit is arranged at the top of the cavity and used for processing the silicon wafer.

9. A silicon wafer processing apparatus, comprising:

the loading and unloading cavity is used for providing loading and unloading space for the silicon wafer;

the silicon wafer process chamber of any one of claims 1 to 8, wherein at least one end of the process chamber is connected to the loading and unloading chamber;

the material conveying device can enter and exit the loading and unloading cavity and is used for conveying the silicon wafers;

and the loading and unloading device is arranged in the loading and unloading cavity and is used for loading and unloading the silicon wafer between the material conveying device and the support plate of the process cavity.

10. The silicon wafer processing apparatus as set forth in claim 9, further comprising:

the third conveying device is arranged in the loading and unloading cavity and is used for conveying the carrier plate with the first conveying device of the process cavity;

the fourth transmission device is arranged in the loading and unloading cavity and is used for transmitting the carrier plate with the second transmission device of the process cavity;

and the carrier plate transposition device is used for transmitting the carrier plate between the third transmission device and the fourth transmission device or transmitting the carrier plate between the first transmission device and the second transmission device.

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