CN111540809A - Solar cell silicon chip drying and curing integrated equipment - Google Patents
Solar cell silicon chip drying and curing integrated equipment Download PDFInfo
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- CN111540809A CN111540809A CN202010287139.4A CN202010287139A CN111540809A CN 111540809 A CN111540809 A CN 111540809A CN 202010287139 A CN202010287139 A CN 202010287139A CN 111540809 A CN111540809 A CN 111540809A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 104
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 101
- 239000010703 silicon Substances 0.000 title claims abstract description 101
- 238000001035 drying Methods 0.000 title claims abstract description 78
- 238000010438 heat treatment Methods 0.000 claims abstract description 60
- 238000007599 discharging Methods 0.000 claims abstract description 40
- 230000007246 mechanism Effects 0.000 claims abstract description 39
- 230000005540 biological transmission Effects 0.000 claims abstract description 21
- 238000005086 pumping Methods 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 85
- 239000003921 oil Substances 0.000 claims description 3
- 238000007664 blowing Methods 0.000 abstract description 8
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000010992 reflux Methods 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 39
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 28
- 229910052709 silver Inorganic materials 0.000 description 24
- 239000004332 silver Substances 0.000 description 24
- 239000007789 gas Substances 0.000 description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 238000007639 printing Methods 0.000 description 9
- 239000000969 carrier Substances 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- Computer Hardware Design (AREA)
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- Drying Of Solid Materials (AREA)
Abstract
The invention discloses solar cell silicon wafer drying and curing integrated equipment which comprises a feeding conveying line, a feeding table, a loading cavity, at least two linear drying ovens, a blanking table, a blanking conveying line and a support plate backflow mechanism, wherein the at least two linear drying ovens, the blanking table and the loading cavity are arranged in parallel; the feeding transmission line corresponds to the feeding end of the feeding table, and the discharging end of the feeding table corresponds to the feeding end of the loading cavity; the feeding end of the blanking table corresponds to the last discharging end of the box body, and the discharging end of the blanking table corresponds to the blanking transmission line. The invention realizes uniform and rapid drying and curing by automatic feeding and discharging and online conveying and silicon wafer lying type double-sided simultaneous heating, and can realize the reflux reuse of the carrier plate; the volatilized organic gas can be uniformly and effectively pumped out in a vacuum air pumping and air inlet mode without a large amount of air blowing, so that the air blowing energy consumption is effectively reduced; and linear feeding and discharging has the advantages of high productivity and small occupied area.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to solar cell silicon wafer drying and curing integrated equipment.
Background
Photovoltaic power generation has become a technology that can replace fossil energy, relying on the ever-decreasing production costs and the increase in photoelectric conversion efficiency in recent years. Solar cells can be roughly classified into two types according to the material of the photovoltaic cell sheet: one is a crystalline silicon solar cell, including a monocrystalline silicon solar cell, a polycrystalline silicon solar cell; the other type is a thin film solar cell, which mainly comprises an amorphous silicon solar cell, a cadmium telluride solar cell, a copper indium gallium selenide solar cell and the like. At present, crystalline silicon solar cells using high-purity silicon materials as main raw materials are mainstream products, and account for more than 80%.
In a crystalline silicon solar power generation system, one of the most central steps for realizing photoelectric conversion is a process of processing crystalline silicon into a cell for realizing photoelectric conversion, so that the photoelectric conversion efficiency of the cell also becomes a key index for embodying the technical level of the crystalline silicon solar power generation system.
Improving cell efficiency and establishing passivation contacts is critical. Because photogenerated carriers move rapidly in the silicon wafer, once the photogenerated carriers contact the surface, the photogenerated carriers are recombined and cannot be collected into current to generate power. If a special protective film is plated on the surface, such as silicon oxide, silicon nitride, aluminum oxide, amorphous silicon and the like, because of saturation of surface crystalline silicon surface chemical bonds and a charge field formed between the film and crystalline silicon, the special protective film can effectively prevent minority carriers from being compounded on the surface.
To further improve efficiency, new cell theory simulations require full coverage of the passivation layer, with carriers reaching the conductive layer overlying the passivation layer through tunneling. The HIT battery is a new battery designed based on this concept. The HIT battery is characterized in that a layer of thin amorphous silicon (3-5 nm) covers the front side and the back side of a silicon wafer, and then the surface of the amorphous silicon is plated with phosphorus-doped amorphous silicon and boron-doped amorphous silicon respectively. Due to the fact that the amorphous silicon has excellent passivation performance, the conversion efficiency of the HIT battery is greatly improved. However, the amorphous silicon passivation can only bear a low-temperature process, the amorphous silicon passivation effect is immediately lost at a temperature above 250 ℃, and the conventional silver paste needs to be sintered at 800 ℃ to achieve good conductivity and adhesion, which is not suitable for printing silver paste which is mature in application on conventional batteries. Therefore, the low-temperature silver paste is specially developed for the HIT battery, the paste is transferred to the surface of the silicon wafer through screen printing by using the low-temperature silver paste to form silver lines, the silver paste needs to be dried after being printed to remove an organic solvent carrier, and finally needs to be solidified. The drying temperature and the curing temperature of the low-temperature silver paste are only 200 ℃ or below, and the low-temperature silver paste and the silicon chip are combined through a binder in the silver paste. Generally, the low-temperature silver paste needs to be dried at 80-150 ℃ for about 10 minutes before entering the next printing process after being dried and cured, and hot air or infrared heating or combination of the hot air and the infrared heating is adopted for drying and heating (because organic gas is volatilized in the drying process, the air needs to be blown out).
Because the silver wire printing adopts a screen printing technology, the capacity of a single printer can reach 3000 pieces/hour or more, the HIT battery production needs to print silver wires (main grids and fine grids) which are arranged for many times, the next printing can be carried out after drying is needed in each printing, and after the last printing, the printing and the curing (curing at 200 ℃ for 30-60 minutes) are needed to achieve the best conductive performance of the silver wires. The printing process and the drying and curing process of one production line are connected together, so that the printing capacity and the drying and curing capacity are best matched.
In order to increase the drying and curing capacity, the prior art generally adopts a plurality of tracks of chain type to convey silicon wafers, the silicon wafers are horizontally laid on a conveying chain, and the conveying chain is dried and cured through a high temperature setting area.
There are also proposed improvements: 1. the silicon wafer is vertically placed between two clamping strips, and a plurality of rails continuously pass through a heating zone forwards in a parallel chain manner, so that the density of the silicon wafer placed in unit length is greatly increased, but the silicon wafer placed vertically is easy to break in the running process between the clamping strips, and the silver wire adhesive force is uneven due to uneven heating in the vertical direction; 2. the silicon chip is placed in the basket of flowers, once can put 50 ~ 100, and the basket of flowers is placed and is passed through the zone of heating on a chain track, and the chain is continuous forward motion in the oven, and its shortcoming is that it is difficult for getting rid of to be heated unevenly and between the silicon chip in the basket of flowers in the same silicon chip, and organic solvent stops and need a large amount of air blowing to flow between the silicon chip and the extravagant energy.
Disclosure of Invention
In order to solve the technical problem, the invention provides solar cell silicon wafer drying and curing integrated equipment which comprises a feeding conveying line, a feeding table, a loading cavity, at least two linear drying ovens arranged in parallel, a discharging table, a discharging conveying line and a support plate backflow mechanism, wherein the feeding conveying line, the feeding table, the loading cavity, the at least two linear drying ovens arranged in parallel are sequentially arranged;
the oven comprises a box body with a drying chamber, wherein the box body is provided with a first plate inlet door valve corresponding to a feeding end and a first plate outlet door valve corresponding to a discharging end; the box body is also provided with an air inlet pipeline and an air outlet pipeline which are communicated with the drying chamber inside; a lifting bearing mechanism is arranged in the drying chamber; the lifting and supporting mechanism comprises a lifting driving mechanism, a lifting rod driven by the lifting driving mechanism to vertically lift, and a plurality of rows of support plate supports used for supporting the support plate, wherein the support plate supports are arranged in parallel along the vertical direction of the lifting rod; heating plates are arranged corresponding to the upper side and the lower side of each row of the support plate bracket;
a second plate inlet door valve is arranged at the feeding end of the loading cavity, a second plate outlet door valve is arranged at the discharging end of the loading cavity, and the second plate outlet door valve at the discharging end of the loading cavity corresponds to the first plate inlet door valve at the feeding end of the first drying oven;
the feeding transmission line corresponds to the feeding end of the feeding table, and the discharging end of the feeding table corresponds to the second plate inlet valve of the loading cavity;
the feeding end of the blanking table corresponds to the first discharge gate valve at the last discharge end of the box body, and the discharge end of the blanking table corresponds to the blanking transmission line;
the silicon wafers on the feeding conveying line are grabbed and placed on the support plates of the feeding table through a manipulator, the support plates of the feeding table are conveyed to the loading cavity through a support plate conveying mechanism, the support plates in the loading cavity are conveyed to a first oven through a support plate conveying mechanism for drying, the support plates in the first oven are sequentially conveyed to a subsequent oven through the support plate conveying mechanism for curing, the support plates in the last oven are conveyed to the discharging table through the support plate conveying mechanism, the silicon wafers on the support plates of the discharging table are transferred to the discharging conveying line through the manipulator, and the support plates above the discharging table flow back to the feeding table through a support plate backflow mechanism for repeated feeding;
the specification of the carrier plate is M multiplied by N; wherein M is the number of silicon wafer rows in the moving direction of the carrier plate, namely M silicon wafers in each row; n is the number of silicon chip rows of the carrier plate perpendicular to the moving direction, namely N silicon chips in each row; the loading transmission line horizontally conveys and arranges one silicon wafer printed with silver paste into 1 row of M silicon wafers, the silicon wafers are grabbed by the manipulator once and transferred to the support plate of the loading table to form a row, the rest is done, after the N rows of silicon wafers are placed, the support plate is conveyed to the loading cavity by the loading table, and the loading table receives the next empty support plate which is returned by the support plate return mechanism and starts to load the silicon wafers; the dried silicon wafers filled on the support plate of the blanking table are taken down by M pieces in each row through a manipulator and are placed on a blanking transmission line, the no-load plate on the blanking table after unloading the silicon wafers is transmitted back to the feeding table through the support plate backflow mechanism, and the support plate is sequentially recycled.
Wherein, the lifting driving mechanism is any one of hydraulic pressure, oil pressure and a lifting motor.
The heating plate is a heating wire or a plurality of heating lamps are arranged, the longitudinal length of the heating plate is larger than that of the support plate, and the transverse length of the heating plate is larger than that of the support plate. Therefore, the carrier plate is uniformly heated up and down by a vertical heating mode and the heating area is larger than the area of the carrier plate.
Wherein, the heating lamp is an infrared lamp, a visible light lamp or an ultraviolet lamp. The silicon chip on the support plate is heated by heat generated by the light emitted by the heating lamps, and the heating plate can be provided with LED light-emitting lamps which are densely arranged or other light-emitting lamps or lamp tubes in a plane form.
The drying and curing integrated equipment with the structure has the advantages that the drying oven can simultaneously support a plurality of rows of carrier plates provided with silicon wafers by utilizing a plurality of rows of carrier plate supports which are vertically arranged, and heating sources are arranged on the upper side and the lower side corresponding to each row of carrier plates, so that the simultaneous heating, drying or curing of the plurality of rows of carrier plates can be effectively realized (wherein, the drying oven communicated with the loading cavity is mainly used for drying the silicon wafers, the heating temperature is set to be about 80-150 ℃ for drying 10 minutes for drying low-temperature silver paste, the subsequent drying oven is mainly used for curing the low-temperature silver paste on the silicon wafers, the heating temperature is set to be 200 ℃ for curing 30-60 minutes, therefore, a plurality of drying ovens for curing are generally required to be linearly arranged in parallel, the carrier plates are usually stayed in each drying oven for curing for 10 minutes, and if the requirement of curing for 60 minutes is met, 6 drying, integrated equipment needs linear 7 ovens that set up promptly just can satisfy the demand of above-mentioned stoving and solidification, specifically carries out quantity and time setting as required), and opens the realization through inlet channel and the valve of the pipeline of giving vent to anger when stoving or solidification and blow in order in time to discharge out the box with volatilizing organic gas on the silicon chip to realize the batch stoving or the solidification of silicon chip fast.
The silicon wafer loading device comprises a box body, a support plate support, a chain type roller conveying line, a lifting roller conveying line and a stacking roller conveying line, wherein the support plate support is arranged in a lifting mode, and support plates loaded with silicon wafers can be conveyed into the box body one by utilizing the chain type roller conveying line and stacked one by one in a; moreover, each heating plate can be set to be independently controlled in temperature, and the heating mode can be a heating plate heated by distributed heating resistance wires or a heating lamp arranged to heat by light so as to enable the surface of the silicon wafer on the carrier plate to be uniformly heated up and down.
Wherein, each heating plate corresponding to the carrier plate can be respectively set for temperature and independently controlled, and the target temperature is generally set to be 80-200 ℃ so that the silicon chip on each carrier plate can be respectively controlled for heating.
The number of the carrier plates which can be stored in the box body is the number of layers on the carrier plate support, the number of the carrier plates can be matched with the time required for drying, the number of the layers is more, and the stay time of each carrier plate in the box body can be longer in order to achieve the preset capacity. For example, if 40 silicon wafers are placed on each carrier, in order to ensure that the drying time of each silicon wafer reaches 10 minutes and meet the throughput of 3600 wafers/hour, the carrier supports need to be set to 9 layers, that is, 9 carriers can be placed in the box body at the same time.
Wherein, the inlet line on the box and the pipeline of giving vent to anger all are equipped with the valve, and the valve of opening the inlet line can let gas such as air, nitrogen gas get into, and the valve of opening the pipeline of giving vent to anger can let gas outgoing such as air, nitrogen gas that mix to have volatile organic gas to realize drying while exhausting.
And the loading cavity is also communicated to a vacuum pumping device through a first vacuum valve.
And the air outlet pipeline of the first oven is communicated to the loading cavity through a second vacuum valve.
In the structure, the loading cavity is connected with the drying oven for drying through the chain type roller conveying line, the carrier plate loaded with the silicon wafers enters from the second plate inlet door valve of the loading cavity through the chain type roller conveying line, then the second plate inlet door valve, the second plate outlet door valve and the second vacuum valve are closed, and the first vacuum valve is opened to vacuumize the loading cavity through the vacuum pump; then opening a second vacuum valve of an air outlet pipeline connected between the loading cavity and the box body to enable the air in the box body to backfill into the loading cavity to enable the air pressure between the loading cavity and the oven to be balanced, and then opening a second plate outlet valve of the loading cavity and a first plate inlet valve of the box body to transfer the support plate to a support plate bracket in the box body; the steps are repeated to realize the stacking loading of the carrier plates on the carrier plate support, the carrier plates can be heated by correspondingly controlled heating plates while being loaded, and the carrier plates can also be heated together after being loaded in multiple layers.
After the carrier plate is transferred to the loading cavity through the rollers, the carrier plate can be vacuumized to reach a set vacuum degree (50-40000 Pa); when the carrier plate is taken out of the oven, an air inlet pipeline valve on the box body is opened to be connected with the atmosphere and clean air (CDA) is injected to the atmospheric pressure. The air exhaust and air intake mode of the oven is beneficial to realizing the rapid emission of organic gas uniformly volatilized in the oven, namely the organic gas of the oven is emitted to a tail gas treatment center through a vacuum pump communicated with the loading cavity, and the air exhaust and air intake cycle period of the oven is the cycle period of the carrier plate entering and exiting the oven, and the cycle period is about 30-60 seconds to realize the synchronous proceeding of loading, air exhaust and air intake and keep the consistent beat; the support plate can be moved out of the oven layer by layer through the chain type roller transmission line after being dried in the oven for a certain time, the support plate enters the oven for subsequent curing after being moved out of the oven for drying to be cured, the support plate is moved out of the oven and enters the blanking table after the curing is finished, then the support plate enters the blanking conveying line from the blanking table, and the efficient linear feeding, discharging, drying and curing of the low-temperature silver paste on the silicon chip after the screen printing are finished.
Through the technical scheme, the invention has the following advantages:
1) the feeding of the silicon wafers to the carrier plate on the feeding transmission line, the feeding of the carrier plate provided with the silicon wafers on the feeding transmission line to the feeding table, the feeding of the carrier plate provided with the silicon wafers on the feeding table to the loading cavity, the multilayer arrangement feeding of the loading cavity to the oven, the drying of low-temperature silver paste on the silicon wafers in the oven for drying, the curing of the low-temperature silver paste on the silicon wafers in the oven which are linearly arranged in parallel and used for curing, the discharging of the carrier plate in the oven to the discharging table, the discharging of the carrier plate on the discharging table to the discharging transmission line and the repeated use of the backflow of the carrier plate between the discharging table and the feeding table can be realized, so that the automatic on-line feeding, drying and discharging can be realized;
2) the silicon wafer is placed horizontally, heated and dried, and the two sides of the silicon wafer are heated simultaneously, so that the silicon wafer can be uniformly heated, and the silicon wafer can be quickly and uniformly dried;
3) the volatilized organic gas can be uniformly and effectively pumped out in a vacuum air pumping and air inlet mode, so that a large amount of air blowing is not needed, and the air blowing energy consumption is effectively reduced;
4) the box-type structure multilayer loading and drying mode has the advantages of high productivity and small occupied area, the productivity can be matched with that of silver wire screen printing through the optimization of the structure of the carrier plate and the optimization of the number of the carrier plate layers in the oven, and the productivity can reach 3000 pieces/hour or more.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
Fig. 1 is a schematic structural diagram of a drying and curing integrated apparatus disclosed in an embodiment of the present invention.
The figures in the drawings represent: 10. a box body; 11. a drying chamber; 121. a first plate inlet valve; 122. a first plate outlet valve; 131. an air intake duct; 132. an air outlet pipe; 14. a lifting drive mechanism; 15. a lifting rod; 16. a support plate bracket; 17. heating plates; 18. a lamp tube; 20. a loading chamber; 211. a second plate inlet valve; 212. a second plate outlet valve; 22. a vacuum pump; 221. a first vacuum valve; 222. a second vacuum valve; 30. a carrier plate; 40. a silicon wafer; 51. a feeding conveying line; 52. a blanking conveying line; 61. a feeding table; 62. a blanking table.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1, the invention provides a solar cell silicon wafer drying and curing integrated device, which comprises a feeding conveyor line 51, a feeding table 61, a loading cavity 20, at least two linear ovens arranged in parallel, a discharging table 62, a discharging conveyor line 52 and a support plate backflow mechanism, which are arranged in sequence;
the oven comprises a box body 10 with a drying chamber 11, wherein the box body 10 is provided with a first plate inlet door valve 121 corresponding to the feeding end and a first plate outlet door valve 122 corresponding to the discharging end; the cabinet 10 further has an air inlet duct 131 and an air outlet duct 132 communicating with the inner drying chamber; a lifting bearing mechanism is arranged in the drying chamber; the lifting and supporting mechanism comprises a lifting driving mechanism 14, a lifting rod 15 driven by the lifting driving mechanism 14 to vertically lift, and a plurality of rows of carrier plate supports 16 arranged in parallel along the vertical direction of the lifting rod 15 and used for supporting the carrier plate 30; heating plates 17 are arranged corresponding to the upper side and the lower side of each row of carrier plate supports 16;
a second plate inlet door valve 211 is arranged at the feeding end of the loading cavity 20, a second plate outlet door valve 212 is arranged at the discharging end of the loading cavity 20, and the second plate outlet door valve 212 at the discharging end of the loading cavity 20 corresponds to the first plate inlet door valve 121 at the feeding end of the first oven;
the feeding transmission line corresponds to the feeding end of the feeding table 61, and the discharging end of the feeding table 61 corresponds to the second plate feeding door valve 211 of the loading cavity 20;
the feeding end of the blanking table 62 corresponds to the first discharge gate valve 122 at the discharge end of the last box body 10, and the discharge end of the blanking table 62 corresponds to the blanking transmission line;
the silicon wafers on the feeding conveying line 51 are grabbed and placed on the carrier plates 30 of the feeding table 61 through a manipulator, the carrier plates 30 of the feeding table 61 are conveyed to the loading cavity 20 through a carrier plate conveying mechanism, the carrier plates 30 in the loading cavity 20 are conveyed to a first oven through the carrier plate conveying mechanism for drying, the carrier plates 30 in the first oven are sequentially conveyed to subsequent ovens through the carrier plate conveying mechanism for curing, the carrier plates 30 in the last oven are conveyed to the blanking table 62 through the carrier plate conveying mechanism, the silicon wafers on the carrier plates 30 of the blanking table 62 are transferred to the blanking conveying line 52 through the manipulator, and the carrier plates 30 above the blanking table 62 flow back to the feeding table 61 through a carrier plate backflow mechanism arranged for repeated feeding;
the specification of the carrier plate 30 is mxn; wherein M is the number of rows of silicon wafers 40 in the moving direction of the carrier plate 30, i.e., M silicon wafers 40 in each row; n is the number of the silicon chip 40 rows of the carrier plate 30 perpendicular to the moving direction, namely N silicon chips 40 in each row; the loading transmission line horizontally conveys and arranges one silicon wafer 40 printed with silver paste into 1 row of M silicon wafers, the silicon wafers are grabbed by the manipulator once and transferred to the support plate 30 of the loading table 61 to form a row, and the like, after the silicon wafers 40 with N rows are placed, the support plate 30 is conveyed to the loading cavity 20 by the loading table 61, and the loading table 61 receives the next empty support plate 30 which is returned by the support plate backflow mechanism and starts to load the silicon wafers 40; the dried silicon wafers 40 filled on the carrier plate 30 of the blanking table 62 are taken down by M pieces per row through a manipulator and placed on a blanking transmission line, the empty load plate 30 with the silicon wafers 40 unloaded on the blanking table 62 is transmitted back to the loading table 61 through a carrier plate backflow mechanism, and the carrier plate 30 is sequentially recycled.
The lift driving mechanism 14 is any one of hydraulic pressure, oil pressure, and a lift motor. The heating plate 17 is a heating wire or a plurality of heating lamps are arranged, the longitudinal length of the heating plate 17 is greater than that of the support plate 30, the transverse length of the heating plate 17 is greater than that of the support plate 30, and therefore the support plate 30 is uniformly heated up and down by means of up-and-down heating and the heating area is greater than that of the support plate 30. The heating lamp is an infrared lamp, a visible light lamp or an ultraviolet lamp. The silicon wafer 40 on the carrier plate 30 is heated by the heat generated by the heating lamps, and the heating plate 17 may be formed by densely arranged LED lamps or other planar lamps or tubes 18. The loading cavity 20 is also communicated to the vacuum pump 22 through a first vacuum valve 221; the outlet pipe 132 of the first oven is connected to the loading chamber 20 through the second vacuum valve 222.
In this embodiment 1, a plurality of rows of vertically arranged carrier supports 16 are utilized to simultaneously support a plurality of rows of carrier plates 30 with silicon wafers 40, and heating sources are respectively disposed at upper and lower sides of each row of carrier plates 30, so as to effectively achieve simultaneous heating, drying, or curing of the plurality of rows of carrier plates 30 (wherein, the first oven communicated with the loading cavity 20 is mainly used for drying the silicon wafers 40 at a heating temperature of 80-150 ℃ for about 10 minutes for drying low-temperature silver paste; wherein, the subsequent ovens are mainly used for curing the low-temperature silver paste on the silicon wafers 40 at a heating temperature of 200 ℃ for 30-60 minutes, therefore, a plurality of ovens for curing are generally required to be linearly arranged in parallel, usually, the carrier plates 30 stay in each oven for curing for 10 minutes, and if the requirement of curing for 60 minutes is met, 6 ovens for curing are required to be linearly arranged in parallel, that is, the integrated equipment needs 7 linearly-arranged ovens to meet the requirements of drying and curing, and specifically, the number and time are set according to the requirements), and the valves of the air inlet pipeline 131 and the air outlet pipeline 132 are opened to realize blowing so as to discharge the organic gas volatilized from the silicon wafer 40 out of the box body 10 in time during drying or curing, thereby rapidly realizing batch drying or curing of the silicon wafer 40.
The carrier plate supports 16 are arranged in a lifting manner, and the carrier plates 30 with the silicon wafers 40 can be conveyed into the box body 10 one by utilizing a chain type roller conveying line and stacked one by one in a one-to-one correspondence manner through the lifting of the carrier plate supports 16; moreover, each heating plate 17 can be set to independently control the temperature, and the heating mode can be a heating plate 17 heated by distributed heating wires or can be a heating lamp arranged to heat the silicon wafer 40 on the carrier plate 30 up and down uniformly by using light.
Wherein, each heating plate 17 corresponding to the carrier plate 30 can be set with temperature and independently controlled, and the target temperature is generally set to 80-200 ℃ so that the silicon wafer 40 on each carrier plate 30 can be controlled to be heated.
The number of the carrier plates 30 that can be stored in the housing 10 is the number of layers on the carrier plate support 16, and the number of the carrier plates can be designed to match the time required for drying, and the larger the number of the layers, the longer the residence time of each carrier plate 30 in the housing 10 can be for the predetermined productivity. For example, if 40 silicon wafers 40 are placed on each carrier 30, in order to ensure that the drying time of each silicon wafer 40 reaches 10 minutes and meet the throughput of 3600 wafers/hour, the carrier supports 16 need to be set to 9 layers, that is, 9 carriers 30 can be placed in the box 10 at the same time.
Wherein, the inlet line 131 and the outlet line 132 on the box 10 are all provided with valves, the valve of opening the inlet line 131 can let air, nitrogen gas and other gases enter, the valve of opening the outlet line 132 can let the air, nitrogen gas and other gases mixed with volatile organic gases discharge, thereby realizing drying and exhausting.
The loading cavity 20 and the box body 10 are connected through a chain type roller conveying line, the carrier plate 30 loaded with the silicon wafers 40 enters from a second plate inlet valve 211 of the loading cavity 20 through the chain type roller conveying line, then the second plate inlet valve 211, a second plate outlet valve 212 and a second vacuum valve are closed, and the first vacuum valve is opened so as to vacuumize the loading cavity 20 through a vacuum pump; then opening a second vacuum valve connected with the air outlet pipeline 132 between the loading cavity 20 and the box body 10 to enable the gas in the box body 10 to backfill into the loading cavity 20 to enable the air pressure between the loading cavity 20 and the oven to be balanced, and then opening a second plate outlet valve of the loading cavity 20 and a first plate inlet valve of the box body 10 to transfer the carrier plate 30 to the carrier plate bracket 16 in the box body 10; the above steps are repeated to realize the stacking loading of the carrier plates 30 on the carrier plate support 16, and the carrier plates can be heated by the correspondingly controlled heating plate 17 while loading, or heated together after being loaded in multiple layers.
After the carrier plate 30 is transferred to the loading cavity 20 through the rollers, the carrier plate can be vacuumized to reach a set vacuum degree (50-40000 Pa); when the carrier plate 30 exits the oven, the inlet duct 131 on the chamber 10 is opened to connect to the atmosphere and inject clean air (CDA) to atmospheric pressure. The air exhaust and air intake mode of the oven is beneficial to realizing the rapid emission of organic gas uniformly volatilized in the oven, namely the organic gas of the oven is emitted to a tail gas treatment center through a vacuum pump communicated with the loading cavity 20, and the air exhaust and air intake cycle period of the oven is the cycle period of the carrier plate 30 entering and exiting the oven, and the cycle period is about 30-60 seconds to realize the synchronous proceeding of loading, air exhaust and air intake and keep the consistent beat; the carrier plate 30 can be moved out of the oven layer by layer through the chain type roller transmission line after being dried in the oven for a certain time, the carrier plate 30 enters the oven for subsequent curing after being moved out of the oven for drying to be cured, after the curing is finished, the carrier plate 30 is moved out of the oven and enters the blanking table 62, and then enters the blanking transmission line 52 from the blanking table 62, namely, the efficient linear feeding, discharging, drying and curing of the low-temperature silver paste on the silicon chip 40 after the screen printing are finished.
Through the technical scheme, the invention can realize the feeding of the silicon wafer 40 to the carrier plate 30 on the feeding transmission line, the feeding of the carrier plate 30 provided with the silicon wafer 40 on the feeding transmission line to the feeding table 61, the feeding of the carrier plate 30 provided with the silicon wafer 40 on the feeding table 61 to the loading cavity 20, the multi-layer arrangement feeding of the loading cavity 20 to the oven, the low-temperature silver paste drying on the silicon wafer 40 in the oven for drying, the low-temperature silver paste curing on the silicon wafer 40 in the oven for curing in a plurality of linear parallel arrangement, the blanking of the carrier plate 30 in the oven to the blanking table 62, the blanking of the carrier plate 30 on the blanking table 62 to the blanking transmission line 52 and the backflow reuse of the carrier plate 30 between the blanking table 62 and the feeding table 61, thereby realizing the automatic on-line feeding, drying and blanking; the silicon wafer 40 is placed horizontally, heated and dried, and the two sides of the silicon wafer are heated simultaneously, so that the silicon wafer 40 can be uniformly heated, and the silicon wafer can be quickly and uniformly dried; the volatilized organic gas can be uniformly and effectively pumped out in a vacuum air pumping and air inlet mode, so that a large amount of air blowing is not needed, and the air blowing energy consumption is effectively reduced; the box-type structure multilayer loading and drying mode has the advantages of high productivity and small occupied area, and the productivity can be matched with that of silver wire screen printing by optimizing the structure of the carrier plate 30 and optimizing the number of the layers of the carrier plate 30 in the oven, and the productivity can reach 3000 pieces/hour or more.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to the above-described embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. The solar cell silicon wafer drying and curing integrated equipment is characterized by comprising a feeding conveying line, a feeding table, a loading cavity, at least two linear drying ovens arranged in parallel, a discharging table, a discharging conveying line and a support plate backflow mechanism, wherein the feeding conveying line, the feeding table and the loading cavity are sequentially arranged;
the oven comprises a box body with a drying chamber, wherein the box body is provided with a first plate inlet door valve corresponding to a feeding end and a first plate outlet door valve corresponding to a discharging end; the box body is also provided with an air inlet pipeline and an air outlet pipeline which are communicated with the drying chamber inside; a lifting bearing mechanism is arranged in the drying chamber; the lifting and supporting mechanism comprises a lifting driving mechanism, a lifting rod driven by the lifting driving mechanism to vertically lift, and a plurality of rows of support plate supports used for supporting the support plate, wherein the support plate supports are arranged in parallel along the vertical direction of the lifting rod; heating plates are arranged corresponding to the upper side and the lower side of each row of the support plate bracket;
a second plate inlet door valve is arranged at the feeding end of the loading cavity, a second plate outlet door valve is arranged at the discharging end of the loading cavity, and the second plate outlet door valve at the discharging end of the loading cavity corresponds to the first plate inlet door valve at the feeding end of the first drying oven;
the feeding transmission line corresponds to the feeding end of the feeding table, and the discharging end of the feeding table corresponds to the second plate inlet valve of the loading cavity;
the feeding end of the blanking table corresponds to the first discharge gate valve at the last discharge end of the box body, and the discharge end of the blanking table corresponds to the blanking transmission line;
the silicon wafers on the feeding conveying line are grabbed and placed on the support plates of the feeding table through a manipulator, the support plates of the feeding table are conveyed to the loading cavity through a support plate conveying mechanism, the support plates in the loading cavity are conveyed to a first oven through a support plate conveying mechanism for drying, the support plates in the first oven are sequentially conveyed to a subsequent oven through the support plate conveying mechanism for curing, the support plates in the last oven are conveyed to the discharging table through the support plate conveying mechanism, the silicon wafers on the support plates of the discharging table are transferred to the discharging conveying line through the manipulator, and the support plates above the discharging table flow back to the feeding table through a support plate backflow mechanism for repeated feeding;
the specification of the carrier plate is M multiplied by N; wherein M is the number of silicon wafer rows in the moving direction of the carrier plate, namely M silicon wafers in each row; and N is the number of silicon chip rows of the carrier plate perpendicular to the movement direction, namely N silicon chips in each row.
2. The solar cell silicon wafer drying and curing integrated equipment as claimed in claim 1, wherein the lifting driving mechanism is any one of hydraulic pressure, oil pressure and a lifting motor.
3. The integrated solar cell silicon wafer drying and curing device as claimed in claim 1, wherein the heating plate is a thermal resistance wire heating or a plurality of heating lamps are arranged, the longitudinal length of the heating plate is greater than the longitudinal length of the carrier plate, and the transverse length of the heating plate is greater than the transverse length of the carrier plate.
4. The integrated solar cell silicon wafer drying and curing device as claimed in claim 3, wherein the heating lamp tube is an infrared light tube, a visible light tube or an ultraviolet light tube.
5. The integrated drying and curing device for solar cell silicon wafers as claimed in claim 1, wherein the loading chamber is further communicated to a vacuum pumping device through a vacuum valve.
6. The solar cell silicon wafer drying and curing integrated equipment as claimed in claim 5, wherein an air outlet pipeline of the first oven is communicated to the loading cavity through a second vacuum valve.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010287139.4A CN111540809A (en) | 2020-04-13 | 2020-04-13 | Solar cell silicon chip drying and curing integrated equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010287139.4A CN111540809A (en) | 2020-04-13 | 2020-04-13 | Solar cell silicon chip drying and curing integrated equipment |
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| CN111540809A true CN111540809A (en) | 2020-08-14 |
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| CN202010287139.4A Pending CN111540809A (en) | 2020-04-13 | 2020-04-13 | Solar cell silicon chip drying and curing integrated equipment |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111960080A (en) * | 2020-08-20 | 2020-11-20 | 江门龙浩智能装备有限公司 | Parallel feeding and discharging system and method |
| CN112389949A (en) * | 2020-12-01 | 2021-02-23 | 无锡市云之杰自控设备有限公司 | Solar photovoltaic module curing line conveying system |
| CN113539895A (en) * | 2021-06-17 | 2021-10-22 | 深圳米飞泰克科技有限公司 | Chip baking and curing method and chip mounting method |
| CN113894027A (en) * | 2021-11-23 | 2022-01-07 | 东莞市鑫华智能制造有限公司 | UV curing equipment |
| CN114383388A (en) * | 2021-12-19 | 2022-04-22 | 马明阳 | Solar cell silicon wafer drying equipment |
| WO2022242124A1 (en) * | 2021-05-20 | 2022-11-24 | 浙江大学台州研究院 | Automatic curing device for side frame substrate |
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2020
- 2020-04-13 CN CN202010287139.4A patent/CN111540809A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111960080A (en) * | 2020-08-20 | 2020-11-20 | 江门龙浩智能装备有限公司 | Parallel feeding and discharging system and method |
| CN112389949A (en) * | 2020-12-01 | 2021-02-23 | 无锡市云之杰自控设备有限公司 | Solar photovoltaic module curing line conveying system |
| WO2022242124A1 (en) * | 2021-05-20 | 2022-11-24 | 浙江大学台州研究院 | Automatic curing device for side frame substrate |
| CN113539895A (en) * | 2021-06-17 | 2021-10-22 | 深圳米飞泰克科技有限公司 | Chip baking and curing method and chip mounting method |
| CN113894027A (en) * | 2021-11-23 | 2022-01-07 | 东莞市鑫华智能制造有限公司 | UV curing equipment |
| CN113894027B (en) * | 2021-11-23 | 2024-03-22 | 东莞市鑫华智能制造有限公司 | UV curing equipment |
| CN114383388A (en) * | 2021-12-19 | 2022-04-22 | 马明阳 | Solar cell silicon wafer drying equipment |
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