CN214152925U - Integrated equipment for coating and light injection of solar cell - Google Patents
Integrated equipment for coating and light injection of solar cell Download PDFInfo
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- CN214152925U CN214152925U CN202023169566.7U CN202023169566U CN214152925U CN 214152925 U CN214152925 U CN 214152925U CN 202023169566 U CN202023169566 U CN 202023169566U CN 214152925 U CN214152925 U CN 214152925U
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Abstract
The utility model discloses an integrated equipment for solar wafer coating film and light injection, including integrative TCO coating film chamber and the light injection annealing chamber that sets gradually, correspond the conveying mechanism in TCO coating film chamber and light injection annealing chamber to and set up the support plate that is used for the silicon chip to bear on conveying mechanism. The utility model integrates two procedures of TCO coating and light injection annealing into one device, thereby reducing the device investment and the battery manufacturing cost; the silicon wafers are conveyed by the aid of the horizontal support plates to achieve chain-type continuous operation, the process integration degree is improved, the process period is shortened, the problems of turnover, equipment maintenance and the like of feeding and discharging of the silicon wafers are solved, labor cost is reduced, and production efficiency and product yield are improved; the light injection annealing is completed before the silver wire is printed, so that the curing condition of the silver wire is easily optimized to be optimal, and the problem of the reduction of the bonding strength between the silver wire and the silicon wafer caused by the light injection annealing process in the prior art is solved.
Description
Technical Field
The utility model relates to a solar cell technical field, in particular to an integrated equipment that is used for solar wafer coating film and light to pour into.
Background
Photovoltaic power generation has become a technology that can replace fossil energy, relying on the ever-decreasing production costs and the increase in photoelectric conversion efficiency in recent years. Solar cells can be roughly classified into two types according to the material of the photovoltaic cell sheet: one is a crystalline silicon solar cell, including a monocrystalline silicon solar cell, a polycrystalline silicon solar cell; the other type is a thin film solar cell, which mainly comprises an amorphous silicon solar cell, a cadmium telluride solar cell, a copper indium gallium selenide solar cell and the like. At present, crystalline silicon solar cells using high-purity silicon materials as main raw materials are mainstream products, and account for more than 80%.
In a crystalline silicon solar power generation system, one of the most central steps for realizing photoelectric conversion is a process of processing crystalline silicon into a cell for realizing photoelectric conversion, so that the photoelectric conversion efficiency of the cell also becomes a key index for embodying the technical level of the crystalline silicon solar power generation system.
Improving cell efficiency and establishing passivation contacts is critical. Because photogenerated carriers move rapidly in the silicon wafer, once the photogenerated carriers contact the surface, the photogenerated carriers are recombined and cannot be collected into current to generate power. If a special protective film is plated on the surface, such as silicon oxide, silicon nitride, aluminum oxide, amorphous silicon and the like, because of saturation of surface crystalline silicon surface chemical bonds and a charge field formed between the film and crystalline silicon, the special protective film can effectively prevent minority carriers from being compounded on the surface.
To further improve efficiency, new cell theory simulations require full coverage of the passivation layer, with carriers reaching the conductive layer overlying the passivation layer through tunneling. The HIT battery is a new battery designed based on this concept, and has the advantages of high power generation amount and low power consumption cost.
HIT cells are also called heterojunction cells, which are all called crystalline silicon heterojunction solar cells. The HIT battery was first developed by the japan ocean corporation and then successively followed by Kaneka in japan, Solarcity in the united states, and other related companies. Compared with the traditional solar cell, the HIT cell adopts a structure of a monocrystalline silicon substrate and an amorphous silicon thin film heterojunction innovatively, and the method of depositing the amorphous silicon thin film on the crystalline silicon enables the HIT cell to have the advantages of a crystalline silicon cell and a thin film cell. The HIT battery has the characteristics of simple structure, high stability, low battery cost, low process temperature, high photoelectric conversion efficiency, good temperature characteristic, double-sided power generation and the like, and the HIT battery component is an ultimate solution of future battery technology acknowledged by battery industry practitioners and is also known as the next air port of the photovoltaic battery industry.
The HIT cell is used as a high-efficiency solar cell, and the conventional preparation process comprises the following steps: 1. cleaning and texturing; 2. coating amorphous silicon; 3. TCO film coating; 4. and printing silver wires. However, recent research shows that after the solar cell is manufactured, the photoelectric conversion efficiency of the cell can be further improved by 0.2-1.0% by irradiating the surface of the solar cell with strong light for a period of time at a temperature higher than 200 ℃. Therefore, in order to further improve the conversion efficiency of the HIT cell, a light injection process is added after the process of printing the silver wires, namely, the cell is irradiated by high-intensity visible light (2-10 times of sunlight) at a certain temperature, and the cell conversion efficiency is increased after a period of time.
In the prior art, in order to further improve the battery conversion efficiency, an independent device (light injection annealing furnace) is often required to be added after the silver lines are printed to complete the light injection process, which has the following disadvantages:
1. from the process point of view, the battery with the structure can generate electricity on the front side and the back side simultaneously after being formed, is a natural double-sided battery, has high electricity generation efficiency, and the highest electricity generation efficiency reaches more than 25 percent, but the HIT double-sided battery has the defect that conductive silver paste needs to be solidified for about 30 minutes at the temperature of below 200 ℃, so low-temperature silver paste needs to be used, but the optimal temperature for light injection is more than 200 ℃, and if a silicon wafer is subjected to light injection after silver lines are printed, the process temperature of higher than 200 ℃ tends to cause the rapid reduction of the bonding strength between the silver lines and the silicon wafer;
2. from the production perspective, in the battery manufacturing process, a separate device is added to complete light injection, namely a battery manufacturing process is added in the HIT process, the device investment is additionally increased, and the battery manufacturing cost is increased; in addition, problems such as turnover of feeding and discharging of silicon wafers and equipment maintenance are involved, so that labor cost is increased and production efficiency is low, and the yield of the battery plate is adversely affected due to the extension of the battery manufacturing process period.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides an integrated equipment for solar wafer coating film and light injection, including integrative TCO coating film chamber and the light injection annealing chamber that sets gradually, correspond the conveying mechanism in TCO coating film chamber and light injection annealing chamber, and set up the last support plate that is used for the silicon chip to bear of conveying mechanism.
The feeding end of the TCO coating cavity is also provided with a loading vacuum cavity; and the discharge end of the light injection annealing cavity is also provided with an unloading vacuum cavity.
Wherein, the feeding end of the loading vacuum cavity is also provided with a silicon wafer feeding mechanism; and the discharge end of the unloading vacuum cavity is also provided with a silicon wafer unloading mechanism.
The silicon wafer unloading device is characterized by further comprising a support plate rotating mechanism, wherein an inlet end of the support plate rotating mechanism is communicated to the silicon wafer unloading mechanism, and an outlet end of the support plate rotating mechanism is communicated to the silicon wafer loading mechanism, so that a no-load plate after the silicon wafer is unloaded is rotated to the silicon wafer loading mechanism from the silicon wafer unloading mechanism for reuse.
The conveying mechanism corresponding to the TCO coating cavity and the light injection annealing cavity is a chain type conveying mechanism, and the support plate is a flat lying type support plate.
The length of the incident light source adopted in the light injection annealing cavity along the advancing direction of the carrier plate is determined by the time required by annealing and the running speed of the carrier plate, the width of the incident light source is consistent with the width of the carrier plate, and the incident light source covers the silicon wafer on the whole carrier plate in the direction vertical to the moving direction of the carrier plate.
The process for coating the solar cell and injecting light based on the integrated equipment comprises the following steps:
s1, horizontally placing the amorphous silicon coated silicon wafer on a horizontally lying support plate according to an M multiplied by N arrangement mode by using a silicon wafer loading mechanism for loading;
s2, conveying the loaded carrier plate into a loading vacuum cavity by a chain type conveying mechanism, and heating the silicon wafer to 100-300 ℃ in a vacuum environment;
s3, the carrier plate enters a TCO coating cavity, and TCO coating is carried out on the surface of the silicon wafer;
s4, the carrier plate enters a light injection annealing cavity, and light injection annealing treatment is carried out on the silicon wafer subjected to TCO coating, wherein the light injection annealing treatment comprises front side light injection and back side light injection or only single side light injection; the process temperature of the light injection annealing cavity is 150-300 ℃, the pressure is vacuum or atmospheric pressure, and the process gas is N2、O2、H2One or more of Ar and Ar are mixed;
s5, the support plate enters an unloading vacuum cavity and is backfilled to atmospheric pressure;
s6, adopting a silicon wafer blanking mechanism to blank the silicon wafer which is subjected to TCO coating and light injection annealing;
and S7, returning the empty carrier plate to the feeding end through the carrier plate rotating mechanism.
The carrier plate with the MxN specification is prepared from a high-temperature-resistant material, stainless steel or a carbon fiber plate, wherein M is 3-10, and N is 6-12.
In the step S3, the TCO coating method adopts PVD or RPD to sequentially complete the upper coating and the lower coating; or finishing the upper coating and the lower coating at the same time, and enabling the carrier plate to continuously run through the TCO coating cavity or to temporarily stay in the TCO coating cavity as required.
In step S4, the incident light source of the light injection annealing process is a flat visible light source, the flat visible light source is formed by arranging a plurality of fluorescent lamps or LED bulbs in parallel, and the intensity of the incident light is 2-10 times of the intensity of the sunlight; the incident light source can be arranged above or below the carrier plate, or partially arranged above and partially arranged below; in addition, the silicon chip releases heat during the light injection annealing process, the temperature is controlled within the range of 200 +/-20 ℃, if an incident light source is arranged above the carrier plate, an aluminum plate can be placed below the carrier plate, and the temperature of the aluminum plate is controlled within the range of 20-150 ℃ in a heating or cooling mode.
Through the technical scheme, the utility model discloses an it is integrated in an equipment with TCO coating film and light injection annealing twice process, it has following advantage:
1. the equipment investment is reduced, and the manufacturing cost of the battery is reduced;
2. the silicon wafers are conveyed by the aid of the horizontal support plates to achieve chain-type continuous operation, the process integration degree is improved, the process period is shortened, the problems of turnover, equipment maintenance and the like of feeding and discharging of the silicon wafers are solved, labor cost is reduced, and production efficiency and product yield are improved;
3. the light injection annealing is completed before the silver wire is printed, so that the curing condition of the silver wire is easily optimized to be optimal, and the problem of the reduction of the bonding strength between the silver wire and the silicon wafer caused by the light injection annealing process in the prior art is solved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly described below.
Fig. 1 is a schematic view of an integrated device disclosed in an embodiment of the present invention.
100. A silicon wafer feeding mechanism; 200. loading a vacuum cavity; 300, a TCO coating cavity; 400. injecting light into the annealing cavity; 500. unloading the vacuum cavity; 600. a silicon wafer blanking mechanism; 700. a carrier plate rotating mechanism.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1, the present invention provides an integrated apparatus for solar cell film coating and light injection, which includes a TCO film coating chamber 300 and a light injection annealing chamber 400, which are sequentially disposed in an integrated manner, a conveying mechanism corresponding to chain transmission of the TCO film coating chamber 300 and the light injection annealing chamber 400, and a silicon wafer-bearing support plate disposed on the conveying mechanism in a horizontal-lying manner; the feeding end of the TCO coating cavity 300 is also provided with a loading vacuum cavity 200, and the discharging end of the light injection annealing cavity 400 is also provided with an unloading vacuum cavity 500; the feeding end of the loading vacuum cavity 200 is also provided with a silicon wafer feeding mechanism 100, and the discharging end of the unloading vacuum cavity 500 is also provided with a silicon wafer discharging mechanism 600; the silicon wafer unloading device is further provided with a support plate rotating mechanism 700, an inlet end of the support plate rotating mechanism 700 is communicated to the silicon wafer unloading mechanism 600, and an outlet end of the support plate rotating mechanism 700 is communicated to the silicon wafer loading mechanism 100, so that an empty support plate after the silicon wafer is unloaded is rotated to the silicon wafer loading mechanism 100 from the silicon wafer unloading mechanism 600 for reuse.
The length of the incident light source used in the light injection annealing chamber 400 along the advancing direction of the carrier is determined by the time required for annealing and the running speed of the carrier, and the width of the incident light source is consistent with the width of the carrier and covers the silicon wafer on the whole carrier in the direction perpendicular to the moving direction of the carrier.
The process for coating the solar cell and injecting light based on the integrated equipment comprises the following steps:
s1, horizontally placing the silicon wafer subjected to amorphous silicon coating on a horizontally-lying carrier plate according to an M multiplied by N arrangement mode by using a silicon wafer loading mechanism 100 for loading; wherein, M is 3-10, N is 6-12, and the carrier plate is prepared by high temperature resistant material, stainless steel or carbon fiber plate;
s2, conveying the loaded carrier plate into a loading vacuum cavity 200 by a chain type conveying mechanism, and heating the silicon wafer to 100-300 ℃ in a vacuum environment;
s3, the carrier plate enters the TCO coating cavity 300, and TCO coating is carried out on the surface of the silicon wafer; wherein, the TCO film plating mode adopts PVD or RPD to complete the upper film plating and the lower film plating in turn; or the upper coating and the lower coating are completed simultaneously, and the carrier plate continuously runs through or temporarily stays in the TCO coating cavity 300 as required;
s4, the carrier plate enters a light injection annealing chamber 400, and light injection annealing treatment is carried out on the silicon wafer subjected to TCO coating, wherein the light injection annealing treatment comprises front light injection and back light injection; or only single-sided light injection; the process temperature of the light injection annealing cavity is 150-300 ℃, the pressure is vacuum or atmospheric pressure, and the process gas is N2、O2、H2One or more of Ar and Ar are mixed; wherein, the incident light source of the light injection annealing process adopts a flat visible light source which is formed by arranging a plurality of fluorescent lamps or LED lamp bulbs in an array way in parallel, and the intensity of the incident light reaches the sunlight2-10 times stronger; the incident light source can be arranged above or below the carrier plate, or partially arranged above and partially arranged below; in addition, the silicon wafer releases heat in the light injection annealing process, the temperature is controlled within the range of 200 +/-20 ℃, if an incident light source is arranged above the carrier plate, an aluminum plate can be placed below the carrier plate, and the temperature of the aluminum plate is controlled to be 20-150 ℃ in a heating or cooling mode;
s5, the carrier plate enters an unloading vacuum cavity 500 and is backfilled to atmospheric pressure;
s6, adopting a silicon wafer blanking mechanism 600 to blank the silicon wafer which is subjected to TCO coating and light injection annealing;
and S7, returning the empty carrier plate to the feeding end through the carrier plate rotating mechanism 700.
The utility model integrates two procedures of TCO coating and light injection annealing into one device, thereby reducing the device investment and the battery manufacturing cost; the silicon wafers are conveyed by the aid of the horizontal support plates to achieve chain-type continuous operation, the process integration degree is improved, the process period is shortened, the problems of turnover, equipment maintenance and the like of feeding and discharging of the silicon wafers are solved, labor cost is reduced, and production efficiency and product yield are improved; the light injection annealing is completed before the silver wire is printed, so that the curing condition of the silver wire is easily optimized to be optimal, and the problem of the reduction of the bonding strength between the silver wire and the silicon wafer caused by the light injection annealing process in the prior art is solved.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to the above-described embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. The integrated equipment for solar cell film coating and light injection is characterized by comprising a TCO film coating cavity (300) and a light injection annealing cavity (400) which are integrally and sequentially arranged, a conveying mechanism corresponding to the TCO film coating cavity (300) and the light injection annealing cavity (400), and a support plate arranged on the conveying mechanism and used for bearing a silicon wafer.
2. The integrated equipment for solar cell coating and light injection according to claim 1, wherein the feeding end of the TCO coating cavity (300) is further provided with a loading vacuum cavity (200); the discharging end of the light injection annealing cavity (400) is also provided with an unloading vacuum cavity (500).
3. The integrated equipment for solar cell coating and light injection according to claim 2, wherein the feeding end of the loading vacuum chamber (200) is further provided with a silicon wafer feeding mechanism (100); and a silicon wafer discharging mechanism (600) is also arranged at the discharging end of the unloading vacuum cavity (500).
4. The integrated equipment for solar cell coating and light injection as claimed in claim 3, further comprising a carrier plate rotating mechanism (700), wherein an inlet end of the carrier plate rotating mechanism (700) is connected to the silicon wafer unloading mechanism (600), and an outlet end of the carrier plate rotating mechanism (700) is connected to the silicon wafer loading mechanism (100), so as to rotate the unloaded silicon wafer from the silicon wafer unloading mechanism (600) to the silicon wafer loading mechanism (100) for reuse.
5. The integrated apparatus for solar cell coating and light injection according to any one of claims 1-4, wherein the conveying mechanisms corresponding to the TCO coating chamber (300) and the light injection annealing chamber (400) are chain conveying mechanisms, and the carrier plate is a flat-lying carrier plate.
6. The integrated equipment for solar wafer coating and light injection as claimed in any one of claims 1-4, wherein the length of the incident light source used in the light injection annealing chamber (400) along the advancing direction of the carrier plate is determined by the time required for annealing and the running speed of the carrier plate, and the width of the incident light source is consistent with the width of the carrier plate and covers the silicon wafer on the whole carrier plate in the direction perpendicular to the moving direction of the carrier plate.
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| CN202023169566.7U CN214152925U (en) | 2020-12-24 | 2020-12-24 | Integrated equipment for coating and light injection of solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116014036A (en) * | 2023-01-30 | 2023-04-25 | 通威太阳能（成都）有限公司 | Solar cell, preparation method thereof, light injection device and light injection system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116014036A (en) * | 2023-01-30 | 2023-04-25 | 通威太阳能（成都）有限公司 | Solar cell, preparation method thereof, light injection device and light injection system |
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