CN202626285U - Equipment for preparing two-dimensional nano-film - Google Patents
Equipment for preparing two-dimensional nano-film Download PDFInfo
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- CN202626285U CN202626285U CN 201220287247 CN201220287247U CN202626285U CN 202626285 U CN202626285 U CN 202626285U CN 201220287247 CN201220287247 CN 201220287247 CN 201220287247 U CN201220287247 U CN 201220287247U CN 202626285 U CN202626285 U CN 202626285U
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- deposition chamber
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Abstract
The utility model discloses equipment for preparing a two-dimensional nano-film. The equipment comprises a physical vapor deposition chamber, a feed chamber, a chemical vapor deposition chamber and a sample transmission device. Valves are arranged among the chambers. Samples are transmitted among the chambers through the sample transmission device. The chemical vapor deposition chamber is provided with a heating device, a gas connector and a sample lifting device. The physical vapor deposition chamber is provided with a physical vapor deposition system, a sample lifting device and a gas connector. The feed chamber is provided with a sample treatment device. The chambers are additionally provided with vacuumizing devices and sample rotating devices. The equipment has the advantages of simple structure and high working reliability, and can be used for preparing even and high-performance graphene, metal chalcogenide, silylene, germylene or boron nitride two-dimensional nano-films or the like by adopting different technical methods.
Description
Technical field
The utility model relates to a kind of device for preparing novel material, particularly relates to the device of novel two-dimensional nano films such as a kind of continuous preparation Graphene, metal chalcogenide compound, silene, germanium alkene, SP 1.
Background technology
Graphene has remarkable two-dimentional electricity, optics, calorifics, mechanical property and chemicalstability, and Graphene is with a wide range of applications at aspects such as ultrafast opto-electronic device, clear energy sources, transmitters.Electronics transmission speed in Graphene is 150 times of silicon, and leading companys such as IBM have prepared the supper-fast opto-electronic device that speed can reach Terahertz, and California, USA university utilizes Graphene to be developed into the optical modulation detuner, is expected to network speed is improved 10,000 times; The demand of the annual semi-conductor crystal silicon in the whole world is about 2500 tons, if the crystal silicon of Graphene alternative 1/10th is processed high-end unicircuit such as radio circuit, market capacity is at least more than 5,000 hundred million yuan.Because Graphene has only 2.3% photoabsorption; This makes Graphene can be used for preparing the flexible and transparent electrode of opto-electronic device such as display device, solar cell, touch panel etc., thereby replaces cost costliness, resource scarcity, what can not freely fold is the ITO nesa coating of staple by indium.It is reported that the demand of global ITO nesa coating in 2011 is at 8,500 ten thousand-9,500 ten thousand, like this, the development space of the alternative ITO nesa coating of Graphene is huge.Because the electron transport property that Graphene is unique, as transmitter, it has monomolecular susceptibility.Through fast development in recent years, the Graphene product appears on the touch-screen applications.Therefore, the Graphene good commercial is worth and vast market has represented dawn, and the industrialization of grapheme material will be the revolution property change to material, information, energy industry!
Except Graphene, the novel two-dimensional nano film of type Graphene also has its unique photoelectron performance, is with a wide range of applications.The novel two-dimensional nano film of class Graphene comprises the class graphene film that other element of the 4th main group constitutes in lamellated metal chalcogenide compound (metal chalcogenides), SP 1 (boron nitride), silene (silicene), germanium alkene (germanene) or the periodic table of elements etc.
Chemical Vapor deposition process (CVD) and carbon segregation (surface segregation) method is the technological method of two-dimensional nano films such as present large-area preparation Graphene; The equipment that adopts these two kinds of methods to prepare the two-dimensional nano film all is that [Science 324,1312-1314 (2009) for quartz tube furnace basically; Nature Nanotechnology 5,574 (2010); Nano Lett.11,297-303 (2011)].But quartz tube furnace only possesses the simple function of synthetic two-dimensional nano film on existing metal catalytic layer, can not realize to substrate material surface treatment, on substrate synthetic required Catalytic Layer, the two-dimensional nano film synthetic quasi-continuous process of two-dimensional nano of preparation.And, adopt quartz tube furnace synthetic two-dimensional nano film to have textural defect, cause electronic transmission performance relatively poor, quartz tube furnace has seriously restricted the application of two-dimensional nano film such as graphene film.
The utility model content
To the deficiency of prior art, the utility model provides a kind of equipment that can the novel two-dimensional nano film of large-area preparation, characteristics such as that this equipment has is simple in structure, simple to operate, security is good; Can accomplish each required process step of preparation two-dimensional nano film continuously, comprise the synthetic required substrate/Catalytic Layer of two-dimensional nano film is carried out pre-treatment, preparation Catalytic Layer, synthetic two-dimensional nano film etc.Adopt this equipment to prepare that the technology of two-dimensional nano film is simple, cost is lower, the film of preparing has good structure and performance.
The technical scheme that the utility model adopts is following:
A kind of equipment for preparing the two-dimensional nano film comprises the charging chamber, chemical vapor deposition chamber, physical vapor deposition chamber and sample transfer device;
Putting in order of said physical vapor deposition chamber, charging chamber and chemical vapor deposition chamber can be that physical vapor deposition chamber, charging chamber and chemical vapor deposition chamber are arranged in order according to preparation technology's the different permutation and combination of carrying out; Perhaps charging chamber, physical vapor deposition chamber and chemical vapor deposition chamber are arranged in order; Perhaps charging chamber, chemical vapor deposition chamber and physical vapor deposition chamber are arranged in order.
Be respectively equipped with valve between described charging chamber, chemical vapor deposition chamber, each chamber of physical vapor deposition chamber, the charging chamber is provided with the valve with atmosphere.
As preferably, physical vapor deposition chamber is provided with the valve with atmosphere, picks and places sample so that under the situation that does not influence other chamber, can open.
As preferably, chemical vapor deposition chamber is provided with the valve with atmosphere, picks and places sample so that under the situation that does not influence other chamber, can open.
The equipment of described preparation two-dimensional nano film is provided with the sample transfer device, and described sample transfer device is through power-actuated mode sample to be taken off to cross on the specimen holder that valve is delivered to another chamber from the specimen holder of a chamber; As preferably, the handing-over of sample for ease or pick and place, described sample transfer device can also be provided with mechanical manipulator.The mode of sample transmission mainly comprises: 1) through magnetic force external impetus is delivered to and makes it to be converted into mode of motion such as straight line, rotation in the chamber; 2) rely on the form of dynamic seal (mainly being O shape circle, filler, magnetic fluid etc.) that power is directly delivered in the chamber; 3) rely on metallic bellows and the mechanical system that adopts etc.
Described chemical vapor deposition chamber is provided with heating unit and the gas communication port more than or two; Heating unit has the function of sample being carried out heat treated, comprises resistive heating device, infrared heating device and laser heating device etc., can make the temperature of sample be controlled at 20 ~ 2000 ° of C.
Described chemical vapor deposition chamber, heating unit and gas communication port can constitute a thermal chemical vapor deposition system.
As preferably; Described chemical vapor deposition chamber is provided with chemical gas-phase deposition system, and described chemical gas-phase deposition system comprises any one or the combination more than two kinds in plasma reinforced chemical vapor deposition system, microwave plasma CVD system, aerosol assistant chemical vapor deposition system, the inductively coupled plasma chemical gas-phase deposition system.
Described physical vapor deposition chamber is provided with the gas communication port more than or two.
Described physical vapor deposition chamber is provided with physics vapour deposition system, and described physics vapour deposition system comprises any one or the combination more than two kinds in ion beam depositing system, sputtering depositing system, electron beam deposition system, hot vapor deposition system, laser deposition system, the ion implant systems.
As preferably, physical vapor deposition chamber is provided with heating unit, and heating unit has the function of sample being carried out heat treated, comprises resistive heating device, infrared heating device and laser heating device etc., can make the temperature of sample be controlled at 20 ~ 2000 ° of C.
As preferably, in order heat to be concentrated on the sample place, and reduce to the place that does not need heat and transmit, be provided with the thermal stabilization shield system in the chamber of described chemical vapor deposition chamber and/or physical vapor deposition chamber; Especially be higher than 150 ° of C when above when the temperature of chamber,, be provided with the thermal stabilization shield system in the chamber as preferably.
In order to make the device security steady running, the chamber wall of described chemical vapor deposition chamber and/or physical vapor deposition chamber is provided with cooling system, and cooling system can be double-deck water-cooling system; Especially be higher than 150 ° of C when above when the temperature of chamber, as preferably, the chamber wall of chamber is provided with cooling system.
Physical vapor deposition chamber, heating unit and gas communication port can constitute a thermal chemical vapor deposition system.
Described charging chamber, physical vapor deposition chamber and chemical vapor deposition chamber are equipped with the sample lifting device; Can regulate the position of sample through the sample lifting device, sample is handed off on the sample transfer device easily in vertical direction.
As preferably; Described charging chamber is provided with sample processing device; Sample processing device comprises the plasma sample processing device, can realize sample is carried out the device of modification, the described ionize that can under the vacuum high frequency condition, realize gas to the coil of gas ionization to the coil of gas ionization or heating unit etc.; Heating unit has the function of sample being carried out heat treated, comprises resistive heating device, infrared heating device and laser heating device etc., can make the temperature of sample be controlled at 20 ~ 2000 ° of C.
As preferably, described charging chamber is provided with the gas communication port.
The communication port that the described gas communication port of the utility model can be a kind of gas, the gas communication port also can be connected with gas mixing box; The inlet of gas mixing box is parallel with two or more gas circuits at least, can make two or more gas get into gas mixing box simultaneously; As preferably, each gas circuit separate connection has metering and flow regulation devices such as mass flowmeter, electromagnet cut off valve, so that the flow of independent each gas of accurately control.The gas that feeds can be selected from rare gas element such as Ar and N
2, reducing gas such as H
2, oxidizing gas such as O
2, synthetic required precursor gas such as the CH of two-dimensional nano film
4, C
2H
4, C
2H
2, NH
3, B
3N
3H
6Or alcoholic acid steam etc., according to the difference of institute's synthetic two-dimensional film, can suitably select different gas or gaseous mixture.
At least one chamber in described charging chamber, physical vapor deposition chamber and the chemical vapor deposition chamber is provided with vacuum extractor; As preferably; The charging chamber; Chemical vapor deposition chamber and physical vapor deposition chamber are respectively equipped with independently vacuum extractor; Each vacuum extractor comprises various vacuum pumps, vacuum pipe, vacuum valve, vacuumometer etc., can make the vacuum tightness of each chamber remain on normal pressure to 1.0 * 10 through vacuum extractor
-10Between the Pa.
As preferably; Described physical vapor deposition chamber and/or chemical vapor deposition chamber are provided with the sample swivel arrangement; Described sample swivel arrangement is to rely on modes such as magnetic force, dynamic seal, corrugated tube to be delivered to external impetus in the chamber and be converted into the device that rotatablely moves; Driving the specimen holder rotation through the sample swivel arrangement correspondingly rotates sample; Realize the accurate location of sample in chamber, its effect is: 1) when carrying out deposit film, make the deposition of film on substrate and/or Catalytic Layer more even through rotatablely moving; 2) owing to realized the accurate location of sample in chamber, can be at the different zones growth different sorts two-dimensional nano film of substrate and/or Catalytic Layer, and made things convenient for sample picking and placeing on specimen holder.As preferably, physical vapor deposition chamber, charging chamber and chemical vapor deposition chamber are equipped with the sample swivel arrangement.
As preferably; Described charging chamber; Chemical vapor deposition chamber and physical vapor deposition chamber are equipped with viewing window, can be observed the condition of production such as synthetic of preparation, the two-dimensional nano film of pre-treatment, the Catalytic Layer of substrate/Catalytic Layer through viewing window, in time understand production status.
Described two-dimensional nano film comprises class graphene film etc. and the film formed of other element of the 4th main group in Graphene, metal chalcogenide compound, SP 1, silene, germanium alkene or the periodic table of elements.
The primary process of preparation two-dimensional nano film comprises: will synthesize required substrate of two-dimensional nano film and/or Catalytic Layer and put into the charging chamber; Under certain atmosphere; Substrate and/or Catalytic Layer are carried out pre-treatment at the charging chamber, and sample is passed to chemical vapor deposition chamber and utilizes chemical gaseous phase depositing process to prepare the two-dimensional nano film then.
The primary process of preparation two-dimensional nano film also comprises: will synthesize required substrate of two-dimensional nano film and/or Catalytic Layer and put into the charging chamber; Under certain atmosphere; Substrate and/or Catalytic Layer are carried out pre-treatment at the charging chamber, and sample is passed to physical vapor deposition chamber and utilizes physical gas-phase deposite method to prepare the two-dimensional nano film then.
The primary process of preparation two-dimensional nano film also comprises: will synthesize required substrate of two-dimensional nano film and/or Catalytic Layer and put into the charging chamber; Under certain atmosphere; Substrate and/or Catalytic Layer are carried out pre-treatment at the charging chamber, by the sample transfer device substrate and/or Catalytic Layer are delivered to physical vapor deposition chamber then; In physical vapor deposition chamber, utilize physical gas phase deposition technology to prepare Catalytic Layer; After the Catalytic Layer preparation, sample is passed to chemical vapor deposition chamber and utilizes chemical gaseous phase depositing process to prepare the two-dimensional nano film.
The primary process of preparation two-dimensional nano film also comprises: will synthesize required substrate of two-dimensional nano film and/or Catalytic Layer and put into the charging chamber; Under certain atmosphere; Substrate and/or Catalytic Layer are carried out pre-treatment at the charging chamber, by the sample transfer device substrate and/or Catalytic Layer are delivered to physical vapor deposition chamber then; In physical vapor deposition chamber, utilize physical gas-phase deposite method to prepare Catalytic Layer; After the Catalytic Layer preparation, utilize physical gas-phase deposite method on Catalytic Layer, to prepare the presoma of two-dimensional nano material at physical vapor deposition chamber; At physical vapor deposition chamber the presoma process of two-dimensional nano material is handled and formation two-dimensional nano film then; Perhaps, behind the presoma of preparation two-dimensional nano material, be delivered to chemical vapor deposition chamber, the presoma of two-dimensional nano material be converted into the two-dimensional nano film in chemical vapor deposition chamber.
The presoma of two-dimensional nano material is the compound that contains the element of forming the two-dimensional nano material, is example with the synthesizing graphite alkene, and presoma comprises organism or the polymkeric substance of agraphitic carbon, amorphous carbon-film, carbon elements etc.; With synthetic MoS
2Be example, presoma comprises MoS
2, sulphur powder, MoO
3Powder, (NH
4)
2MoS
4Deng; With the silene is example, and presoma is a silicon chip etc.; With the SP 1 is example, and presoma can be B
3N
3H
6, NH
3-BH
3, Decaboron tetradecahydride/ammonia (decaborane/ammonia) etc.; With SnS is example, and presoma can be Sn powder and FeS
2Powder etc.
The equipment of the utility model is integrated, the multi-functional equipment of preparation two-dimensional nano film; Can realize that the pre-treatment from substrate and/or Catalytic Layer, the two-dimensional nano film synthetic that is prepared into of Catalytic Layer prepare process continuously, thereby prepare high performance two-dimensional nano film; Adopt the equipment of the utility model; Not only can utilize chemical gaseous phase depositing process to prepare the two-dimensional nano film; Also can utilize technological methods such as sputter, hot vapor deposition, ion implantation, plasma, laser to prepare the two-dimensional nano film; Help to set up the best-of-breed technology route of preparation two-dimensional nano film like this, help to explore the performances such as physics, chemistry, photoelectron of two-dimensional nano film; Utilize the equipment of the utility model can prepare the two-dimensional nano film of forming like the class graphene film of other element of the 4th main group in Graphene, metal chalcogenide compound, SP 1, silene, germanium alkene or the periodic table of elements; Help to realize the large-scale production of two-dimensional nano film, promote the application of two-dimensional nano film.
Description of drawings
Fig. 1 is the one-piece construction synoptic diagram of the preparation two-dimensional nano membrane equipment of the utility model; Physical vapor deposition chamber, charging chamber and chemical vapor deposition chamber are arranged in order; Wherein, Physical vapor deposition chamber is provided with sample lifting device, vacuum extractor, heating unit, sample swivel arrangement and physics vapour deposition system; Chemical vapor deposition chamber is provided with vacuum extractor, sample lifting device, heating unit and sample swivel arrangement, and the charging chamber is provided with vacuum extractor, sample lifting device and sample processing device.
Fig. 2 is the one-piece construction synoptic diagram of the preparation two-dimensional nano membrane equipment of the utility model; Physical vapor deposition chamber, charging chamber and chemical vapor deposition chamber are arranged in order; Wherein, The charging chamber is provided with sample processing device, sample swivel arrangement, heating unit, vacuum extractor and sample lifting device; Physical vapor deposition chamber is provided with heating unit, vacuum extractor, sample swivel arrangement, physics vapour deposition system and sample lifting device, and chemical vapor deposition chamber is provided with heating unit, sample swivel arrangement, thermal stabilization shield system, cooling system, vacuum extractor, sample lifting device and chemical gas-phase deposition system.
Fig. 3 is the one-piece construction synoptic diagram of the preparation two-dimensional nano membrane equipment of the utility model; Charging chamber, physical vapor deposition chamber and chemical vapor deposition chamber are arranged in order; Wherein, Physical vapor deposition chamber is provided with physics vapour deposition system, sample swivel arrangement, heating unit, cooling system, vacuum extractor and sample lifting device; Chemical vapor deposition chamber is provided with chemical gas-phase deposition system, thermal stabilization shield system, heating unit and sample lifting device, and the charging chamber is provided with sample processing device, vacuum extractor and sample lifting device.
Fig. 4 is the one-piece construction synoptic diagram of the preparation two-dimensional nano membrane equipment of the utility model; Charging chamber, chemical vapor deposition chamber and physical vapor deposition chamber are arranged in order; Wherein, The charging chamber is provided with sample processing device, sample swivel arrangement, heating unit, vacuum extractor and sample lifting device; Physical vapor deposition chamber is provided with heating unit, sample swivel arrangement, physics vapour deposition system, cooling system and sample lifting device, and chemical vapor deposition chamber is provided with heating unit, sample swivel arrangement, thermal stabilization shield system, cooling system, chemical gas-phase deposition system, vacuum extractor and sample lifting device.
Shown in the figure:
Embodiment
The technique effect that is produced in order more to be expressly understood the utility model and the utility model is done further explain below in conjunction with accompanying drawing to the utility model.
Embodiment 1:
Referring to Fig. 1, the equipment of the preparation two-dimensional nano film of the utility model comprises charging chamber 4, chemical vapor deposition chamber 2, physical vapor deposition chamber 6, sample transfer device 1 and 8.
Be provided with valve 9 between charging chamber 4 and the chemical vapor deposition chamber 2, transmit bar through sample transfer device 1 like magnetic, sample can transmit between charging chamber 4 and chemical vapor deposition chamber 2 back and forth.
Be provided with valve 10 between charging chamber 4 and the physical vapor deposition chamber 6, through sample transfer device 8, sample can transmit between charging chamber 4 and physical vapor deposition chamber 6 back and forth.
As preferably, physical vapor deposition chamber 6 is provided with the valve 61 with atmosphere, so that can directly pick and place sample from physical vapor deposition chamber.
Chemical vapor deposition chamber 2 is provided with vacuum extractor 25, sample lifting device 3, heating unit 11, sample swivel arrangement 50.
Sample processing device can be for the plasma sample processing device, can realize sample is carried out the device of modification, the described ionize that can under the vacuum high frequency condition, realize gas to the coil of gas ionization to the coil of gas ionization or heating unit etc.; Described heating unit comprises that resistive heating device, infrared heating device, laser heating device etc. can carry out the device of heat treated to sample, make the temperature of sample can be controlled at 20 ~ 2000 ° of C.
Physical vapor deposition chamber 6 is provided with sample lifting device 7, vacuum extractor 27, heating unit 13, sample swivel arrangement 51 and physics vapour deposition system 19, and described physics vapour deposition system comprises any one or the combination more than two kinds in ion beam depositing system, sputtering depositing system, electron beam deposition system, hot vapor deposition system, laser deposition system, the ion implant systems.Heating unit can be the device that resistive heating device, infrared heating device, laser heating device etc. can carry out heat treated to sample, makes the temperature of sample can be controlled at 20 ~ 2000 ° of C.
Described each vacuum extractor comprises various vacuum pumps, vacuum pipe, vacuum valve, vacuumometer etc., and the vacuum tightness that can make each chamber through vacuum extractor is in normal pressure to 1.0 * 10
-10Between the Pa.
Chemical vapor deposition chamber 2 is provided with gas communication port 30, and charging chamber 4 is provided with gas communication port 31, and physical vapor deposition chamber is provided with gas communication port 34; As preferably; Flow for accurate pilot-gas; Each gas communication port can be connected with mass flowmeter and control the flow of each gas, and the two ends of each mass flowmeter respectively are provided with an electromagnet cut off valve, and electromagnet cut off valve is connected with the gas communication port through pipeline with mass flowmeter.
Chemical vapor deposition chamber 2, heating unit 11 constitute a thermal chemical vapor deposition system with gas communication port 30.
Chemical vapor deposition chamber can also be provided with chemical gas-phase deposition system, and described chemical gas-phase deposition system comprises any one or the combination more than two kinds in plasma reinforced chemical vapor deposition system, microwave plasma CVD system, aerosol assistant chemical vapor deposition system, the inductively coupled plasma chemical gas-phase deposition system.
Physical vapor deposition chamber 6, heating unit 13 also can constitute a thermal chemical vapor deposition system with gas communication port 34.
As preferably, the chamber wall of charging chamber 4, chemical vapor deposition chamber 2, physical vapor deposition chamber 6 is equipped with viewing window.
The primary process of preparation two-dimensional nano film comprises: will synthesize required substrate of two-dimensional nano film and/or Catalytic Layer and be placed into charging chamber 4, and carry out pre-treatment at 4 pairs of substrates of charging chamber and/or Catalytic Layer, and be delivered to physical vapor deposition chamber 6 then; At physical vapor deposition chamber 6; Adopt physics vapour deposition system 19 as hot vapor deposition system on substrate and/or Catalytic Layer, to prepare Catalytic Layer; Then sample is delivered to charging chamber 4 from physical vapor deposition chamber 6, is delivered to chemical vapor deposition chamber 2 from charging chamber 4 again; In chemical vapor deposition chamber 2, adopt chemical gaseous phase depositing process on substrate and/or Catalytic Layer, to prepare the two-dimensional nano film; The two-dimensional nano film transfer that makes to charging chamber 4, is taken out from charging chamber 4 then.
Embodiment 2:
Referring to Fig. 2, the equipment of the preparation two-dimensional nano film of the utility model comprises charging chamber 4, chemical vapor deposition chamber 2, physical vapor deposition chamber 6, sample transfer device 1 and 8.
Be provided with valve 9 between charging chamber 4 and the chemical vapor deposition chamber 2, through sample transfer device 1, sample can transmit between charging chamber 4 and chemical vapor deposition chamber 2 back and forth.
As preferably, chemical vapor deposition chamber 2 is provided with the valve 62 with atmosphere, so that can directly pick and place sample from chemical vapor deposition chamber.
As preferably, physical vapor deposition chamber 6 is provided with the valve 61 with atmosphere, so that can directly pick and place sample from physical vapor deposition chamber.
Be provided with valve 10 between charging chamber 4 and the physical vapor deposition chamber 6, through sample transfer device 8, sample can transmit between charging chamber 4 and physical vapor deposition chamber 6 back and forth.
Chemical vapor deposition chamber 2 is provided with vacuum extractor 25, sample lifting device 3, heating unit 11, cooling system 14, thermal stabilization shield system 15, chemical gas-phase deposition system 17 and sample swivel arrangement 50.
Described chemical gas-phase deposition system 17 comprises any one or the combination more than two kinds in plasma reinforced chemical vapor deposition system, microwave plasma CVD system, aerosol assistant chemical vapor deposition system, the inductively coupled plasma chemical gas-phase deposition system.
Charging chamber 4 is provided with the valve 60 with atmosphere, also is provided with vacuum extractor 26, sample lifting device 5, heating unit 12, sample processing device 21 and sample swivel arrangement 52.
Sample processing device can be for the plasma sample processing device, can realize sample is carried out the device of modification, the described ionize that can under the vacuum high frequency condition, realize gas to the coil of gas ionization to the coil of gas ionization or heating unit etc.; Heating unit can be the device that resistive heating device, infrared heating device, laser heating device etc. can carry out heat treated to sample, makes the temperature of sample can be controlled at 20 ~ 2000 ° of C.
Physical vapor deposition chamber 6 is provided with sample lifting device 7, heating unit 13, cooling system 16, sample swivel arrangement 51, vacuum extractor 27 and physics vapour deposition system 19 and 20, and described physics vapour deposition system comprises any one or the combination more than two kinds in ion beam depositing system, sputtering depositing system, electron beam deposition system, hot vapor deposition system, laser deposition system, the ion implant systems.Heating unit comprises that resistive heating device, infrared heating device, laser heating device etc. can carry out the device of heat treated to sample, make the temperature of sample can be controlled at 20 ~ 2000 ° of C.
Chemical vapor deposition chamber 2 is provided with that gas communication port 30 and 38, gas communication port 38 are connected with gas mixing box 40, three gas communication ports 32,33 and 37 of the inlet of gas mixing box 40 parallel connection; Charging chamber 4 is provided with gas communication port 31, and physical vapor deposition chamber is provided with that gas communication port 34 and 39, gas communication port 39 are connected with gas mixing box 41, two gas communication ports 35 of the inlet of gas mixing box 41 parallel connection and 36; As preferably; Flow for accurate pilot-gas; Each gas communication port can be connected with mass flowmeter and control the flow of each gas, and the two ends of each mass flowmeter respectively are provided with an electromagnet cut off valve, and electromagnet cut off valve is connected with the gas communication port through pipeline with mass flowmeter.
Chemical vapor deposition chamber 2, heating unit 11 constitute a thermal chemical vapor deposition system with gas communication port 30 and/or 38.
Physical vapor deposition chamber 6, heating unit 13 also can constitute a thermal chemical vapor deposition system with gas communication port 34 and/or 39.
Described each vacuum extractor comprises various vacuum pumps, vacuum pipe, vacuum valve, vacuumometer etc., and the vacuum tightness that can make each chamber through vacuum extractor is in normal pressure to 1.0 * 10
-10Between the Pa.
As preferably, the chamber wall of charging chamber 4, chemical vapor deposition chamber 2, physical vapor deposition chamber 6 is equipped with viewing window.
The primary process of preparation two-dimensional nano film comprises: will synthesize required substrate of two-dimensional nano film and/or Catalytic Layer and be placed into charging chamber 4, and heat-treat at 4 pairs of substrates of charging chamber and/or Catalytic Layer, and be delivered to physical vapor deposition chamber 6 then; At physical vapor deposition chamber 6; Adopt physics vapour deposition system 19 as hot vapor deposition system on substrate and/or Catalytic Layer, to prepare Catalytic Layer, adopt physics vapour deposition system 20 to be deposited on the Catalytic Layer then like the presoma of sputtering depositing system with the two-dimensional nano material; Afterwards, under certain atmosphere, handle at the presoma of 6 pairs of two-dimensional nano materials of physical vapor deposition chamber and form the two-dimensional nano film; The two-dimensional nano film that makes is delivered to charging chamber 4 from physical vapor deposition chamber 6, takes out from charging chamber 4 then.
The primary process of preparation two-dimensional nano film also comprises: will synthesize the required substrate of two-dimensional nano film and be placed into charging chamber 4, and heat-treat at 4 pairs of substrates of charging chamber, and be delivered to physical vapor deposition chamber 6 then; At physical vapor deposition chamber 6, adopt physics vapour deposition system 19 on substrate, to prepare Catalytic Layer like electron beam deposition system, adopt physics vapour deposition system 20 to be injected in the Catalytic Layer then like the presoma of ion implant systems with the two-dimensional nano material; The sample that afterwards, will be injected with the presoma of two-dimensional nano material from physical vapor deposition chamber 6 is delivered to chemical vapor deposition chamber 2; Handle at the presoma of 2 pairs of two-dimensional nano materials of chemical vapor deposition chamber and form the two-dimensional nano film; The two-dimensional nano film that makes is delivered to charging chamber 4 from chemical vapor deposition chamber 2, takes out from charging chamber 4 then.
The primary process of preparation two-dimensional nano film can also be: will synthesize the required substrate of two-dimensional nano film and be placed into charging chamber 4, and heat-treat at 4 pairs of substrates of charging chamber, and be delivered to physical vapor deposition chamber 6 then; At physical vapor deposition chamber 6; Adopt physics vapour deposition system 19 as plasma-deposited system on substrate, to prepare first kind of Catalytic Layer, adopt physics vapour deposition system 20 on first kind of Catalytic Layer, to prepare in second kind of Catalytic Layer then like sputtering depositing system; Afterwards, there is the sample of Catalytic Layer to be delivered to chemical vapor deposition chamber 2 preparation from physical vapor deposition chamber 6; Adopt chemical gas-phase deposition system 17 to prepare the two-dimensional nano film in chemical vapor deposition chamber 2 like the microwave plasma chemical gas-phase deposition system; The two-dimensional nano film that makes is delivered to charging chamber 4 from chemical vapor deposition chamber 2, takes out from charging chamber 4 then.
The primary process of preparation two-dimensional nano film can also for: will synthesize required substrate of two-dimensional nano film and/or Catalytic Layer and be placed into charging chamber 4, heat-treat, be delivered to physical vapor deposition chamber 6 then at 4 pairs of substrates of charging chamber and/or Catalytic Layer; At physical vapor deposition chamber 6, the presoma ionization with the two-dimensional nano material is deposited on the Catalytic Layer like the ion gun depositing system to adopt physics vapour deposition system 19; Afterwards, under certain atmosphere, handle at the presoma of 6 pairs of two-dimensional nano materials of physical vapor deposition chamber and form the two-dimensional nano film; The two-dimensional nano film that makes is delivered to charging chamber 4 from physical vapor deposition chamber 6, takes out from charging chamber 4 then.
The presoma of described two-dimensional nano material is the compound that contains the element of forming the two-dimensional nano material, is example with the synthesizing graphite alkene, and presoma comprises organism or the polymkeric substance of agraphitic carbon, amorphous carbon-film, carbon elements etc.; With synthetic MoS
2Be example, presoma comprises MoS
2, sulphur powder, MoO
3Powder, (NH
4)
2MoS
4Deng; With the silene is example, and presoma is a silicon chip etc.; With the SP 1 is example, and presoma can be B
3N
3H
6, NH
3-BH
3, Decaboron tetradecahydride/ammonia (decaborane/ammonia) etc.; With SnS is example, and presoma can be Sn powder and FeS
2Powder etc.
Embodiment 3:
Referring to Fig. 3, the equipment of the preparation two-dimensional nano film of the utility model comprises charging chamber 4, chemical vapor deposition chamber 2, physical vapor deposition chamber 6, sample transfer device 1 and 8.
Be provided with valve 10 between charging chamber 4 and the physical vapor deposition chamber 6, through sample transfer device 8, sample can transmit between charging chamber 4 and physical vapor deposition chamber 6 back and forth.
Be provided with valve 9 between chemical vapor deposition chamber 2 and the physical vapor deposition chamber 6, through sample transfer device 1, sample can transmit between chemical vapor deposition chamber 2 and physical vapor deposition chamber 6 back and forth.
As preferably, chemical vapor deposition chamber 2 is provided with the valve 62 with atmosphere, so that can directly pick and place sample from chemical vapor deposition chamber.
Chemical vapor deposition chamber 2 is provided with sample lifting device 3, heating unit 11, thermal stabilization shield system 15 and chemical gas-phase deposition system 17.
Charging chamber 4 is provided with the valve 60 with atmosphere, also is provided with vacuum extractor 26, sample lifting device 5 and sample processing device 21.
Sample processing device can be for the plasma sample processing device, can realize sample is carried out the device of modification, the described ionize that can under the vacuum high frequency condition, realize gas to the coil of gas ionization to the coil of gas ionization or heating unit etc.; Heating unit comprises that resistive heating device, infrared heating device, laser heating device etc. can carry out the device of heat treated to sample, make the temperature of sample can be controlled at 20 ~ 2000 ° of C.
Physical vapor deposition chamber 6 is provided with sample lifting device 7, vacuum extractor 27, heating unit 13, sample swivel arrangement 51, cooling system 16 and physics vapour deposition system 19 and 20, and described physics vapour deposition system comprises any one or the combination more than two kinds in ion beam depositing system, sputtering depositing system, electron beam deposition system, hot vapor deposition system, laser deposition system, the ion implant systems.Heating unit comprises that resistive heating device, infrared heating device, laser heating device etc. can carry out the device of heat treated to sample, make the temperature of sample can be controlled at 20 ~ 2000 ° of C.
Described each vacuum extractor comprises various vacuum pumps, vacuum pipe, vacuum valve, vacuumometer etc., and the vacuum tightness that can make each chamber through vacuum extractor is in normal pressure to 1.0 * 10
-10Between the Pa.
Chemical vapor deposition chamber 2 is provided with gas communication port 30, and charging chamber 4 is provided with gas communication port 31, and physical vapor deposition chamber is provided with gas communication port 34; As preferably; Flow for accurate pilot-gas; Each gas communication port can be connected with mass flowmeter and control the flow of each gas, and the two ends of each mass flowmeter respectively are provided with an electromagnet cut off valve, and electromagnet cut off valve is connected with the gas communication port through pipeline etc. with mass flowmeter.
Chemical vapor deposition chamber 2, heating unit 11 constitute a thermal chemical vapor deposition system with gas communication port 30.
The chemical gas-phase deposition system that chemical vapor deposition chamber can also be provided with comprises any one or the combination more than two kinds in plasma reinforced chemical vapor deposition system, microwave plasma CVD system, aerosol assistant chemical vapor deposition system, the inductively coupled plasma chemical gas-phase deposition system.
Physical vapor deposition chamber 6, heating unit 13 also can constitute a thermal chemical vapor deposition system with gas communication port 34.
As preferably, the chamber wall of charging chamber 4, chemical vapor deposition chamber 2, physical vapor deposition chamber 6 is equipped with viewing window.
The primary process of preparation two-dimensional nano film comprises: will synthesize required substrate of two-dimensional nano film and/or Catalytic Layer and be placed into charging chamber 4, and carry out pre-treatment at 4 pairs of substrates of charging chamber and/or Catalytic Layer, and be delivered to physical vapor deposition chamber 6 then; At physical vapor deposition chamber 6, adopt physics vapour deposition system 19 as hot vapor deposition system on substrate and/or Catalytic Layer, to prepare Catalytic Layer, then sample is delivered to chemical vapor deposition chamber 2 from physical vapor deposition chamber 6; In chemical vapor deposition chamber 2, adopt chemical gas-phase deposition system 17 on substrate and/or Catalytic Layer, to prepare the two-dimensional nano film like the inductively coupled plasma chemical gas-phase deposition system; After the two-dimensional nano film preparation, with the sample taking-up of preparation.
The primary process of preparation two-dimensional nano film also comprises: will synthesize required substrate of two-dimensional nano film and/or Catalytic Layer and be placed into charging chamber 4, and carry out pre-treatment at 4 pairs of substrates of charging chamber and/or Catalytic Layer, and be delivered to physical vapor deposition chamber 6 then; At physical vapor deposition chamber 6, adopt physics vapour deposition system 19 like hot vapor deposition system the presoma ionization of two-dimensional nano material to be deposited on the Catalytic Layer with 20; Afterwards, under certain atmosphere, handle at the presoma of 6 pairs of two-dimensional nano materials of physical vapor deposition chamber and form the two-dimensional nano film; After the two-dimensional nano film preparation, the sample for preparing is delivered to charging chamber 4 from physical vapor deposition chamber 6, takes out from charging chamber 4 then.
The presoma of two-dimensional nano material is the compound that contains the element of forming the two-dimensional nano material, is example with the synthesizing graphite alkene, and presoma comprises organism or the polymkeric substance of agraphitic carbon, amorphous carbon-film, carbon elements etc.; With synthetic MoS
2Be example, presoma comprises MoS
2, sulphur powder, MoO
3Powder, (NH
4)
2MoS
4Deng; With the silene is example, and presoma is a silicon chip etc.; With the SP 1 is example, and presoma can be B
3N
3H
6, NH
3-BH
3, Decaboron tetradecahydride/ammonia (decaborane/ammonia) etc.; With SnS is example, and presoma can be Sn powder and FeS
2Powder etc.
Embodiment 4:
Referring to Fig. 4, the equipment of the preparation two-dimensional nano film of the utility model comprises charging chamber 4, chemical vapor deposition chamber 2, physical vapor deposition chamber 6, sample transfer device 1 and 8.
Be provided with valve 9 between charging chamber 4 and the chemical vapor deposition chamber 2, through sample transfer device 8, sample can transmit between charging chamber 4 and chemical vapor deposition chamber 2 back and forth.
As preferably, chemical vapor deposition chamber 2 is provided with the valve 62 with atmosphere, so that can directly pick and place sample from chemical vapor deposition chamber.
As preferably, physical vapor deposition chamber 6 is provided with the valve 61 with atmosphere, so that can directly pick and place sample from physical vapor deposition chamber.
Be provided with valve 10 between chemical vapor deposition chamber 2 and the physical vapor deposition chamber 6, through sample transfer device 1, sample can transmit between chemical vapor deposition chamber 2 and physical vapor deposition chamber 6 back and forth.
Chemical vapor deposition chamber 2 is provided with vacuum extractor 25, sample lifting device 3, heating unit 11, cooling system 14, thermal stabilization shield system 15, chemical gas-phase deposition system 17 and sample swivel arrangement 50.
Charging chamber 4 is provided with the valve 60 with atmosphere, also is provided with vacuum extractor 26, sample lifting device 5, heating unit 12, sample processing device 21 and sample swivel arrangement 52.
Sample processing device can be for the plasma sample processing device, can realize sample is carried out the device of modification, the described ionize that can under the vacuum high frequency condition, realize gas to the coil of gas ionization to the coil of gas ionization or heating unit etc.; Heating unit comprises that resistive heating device, infrared heating device, laser heating device etc. can carry out the device of heat treated to sample, make the temperature of sample can be controlled at 20 ~ 2000 ° of C.
Physical vapor deposition chamber 6 is provided with sample lifting device 7, heating unit 13, cooling system 16, sample swivel arrangement 51 and physics vapour deposition system 19 and 20, and described physics vapour deposition system comprises any one or the combination more than two kinds in ion beam depositing system, sputtering depositing system, electron beam deposition system, hot vapor deposition system, laser deposition system, the ion implant systems.Heating unit can carry out heat treated to sample.
Chemical vapor deposition chamber 2 is provided with that gas communication port 30 and 38, gas communication port 38 are connected with gas mixing box 40, three gas communication ports 32,33 and 37 of the inlet of gas mixing box 40 parallel connection; Charging chamber 4 is provided with gas communication port 31, and physical vapor deposition chamber is provided with that gas communication port 34 and 39, gas communication port 39 are connected with gas mixing box 41, two gas communication ports 35 of the inlet of gas mixing box 41 parallel connection and 36; As preferably; Flow for accurate pilot-gas; Each gas communication port can be connected with mass flowmeter and control the flow of each gas, and the two ends of each mass flowmeter respectively are provided with an electromagnet cut off valve, and electromagnet cut off valve is connected with the gas communication port through pipeline with mass flowmeter.
Chemical vapor deposition chamber 2, heating unit 11 constitute a chemical gas-phase deposition system with gas communication port 30 and/or 38.
Chemical vapor deposition chamber 2 can also be provided with chemical gas-phase deposition system, and described chemical gas-phase deposition system comprises any one or the combination more than two kinds in plasma reinforced chemical vapor deposition system, microwave plasma CVD system, aerosol assistant chemical vapor deposition system, the inductively coupled plasma chemical gas-phase deposition system.
Physical vapor deposition chamber 6, heating unit 13 also can constitute a thermal chemical vapor deposition system with gas communication port 34 and/or 39.
Described each vacuum extractor comprises various vacuum pumps, vacuum pipe, vacuum valve, vacuumometer etc., and the vacuum tightness that can make each chamber through vacuum extractor is in normal pressure to 1.0 * 10
-10Between the Pa.
As preferably, the chamber wall of charging chamber 4, chemical vapor deposition chamber 2, physical vapor deposition chamber 6 is equipped with viewing window.
The primary process of preparation two-dimensional nano film comprises: will synthesize required substrate of two-dimensional nano film and/or Catalytic Layer and be placed into charging chamber 4; Heat-treat at 4 pairs of substrates of charging chamber and/or Catalytic Layer; Be delivered to chemical vapor deposition chamber 2 then, be delivered to physical vapor deposition chamber 6 from chemical vapor deposition chamber 2 again; At physical vapor deposition chamber 6; Adopt physics vapour deposition system 19 as hot vapor deposition system on substrate and/or Catalytic Layer, to prepare Catalytic Layer, adopt physics vapour deposition system 20 to be deposited on the Catalytic Layer then like the presoma of sputtering depositing system with the two-dimensional nano material; Afterwards, under certain atmosphere, handle at the presoma of 6 pairs of two-dimensional nano materials of physical vapor deposition chamber and form the two-dimensional nano film; After the two-dimensional nano film preparation, with the sample taking-up of preparation.
The presoma of two-dimensional nano material is the compound that contains the element of forming the two-dimensional nano material, is example with the synthesizing graphite alkene, and presoma comprises organism or the polymkeric substance of agraphitic carbon, amorphous carbon-film, carbon elements etc.; With synthetic MoS
2Be example, presoma comprises MoS
2, sulphur powder, MoO
3Powder, (NH
4)
2MoS
4Deng; With the silene is example, and presoma is a silicon chip etc.; With the SP 1 is example, and presoma can be B
3N
3H
6, NH
3-BH
3, Decaboron tetradecahydride/ammonia (decaborane/ammonia) etc.; With SnS is example, and presoma can be Sn powder and FeS
2Powder etc.
The primary process of preparation two-dimensional nano film also comprises: will synthesize the required substrate of two-dimensional nano film and be placed into charging chamber 4, and heat-treat at 4 pairs of substrates of charging chamber, and transmit chemical vapor deposition chamber 2 then; Adopt chemical gas-phase deposition system 17 to prepare the two-dimensional nano film in chemical vapor deposition chamber 2 like plasma reinforced chemical vapor deposition system; After the two-dimensional nano film preparation, the two-dimensional nano film sample that makes is delivered to charging chamber 4 from chemical vapor deposition chamber 2, takes out from charging chamber 4 then.
The primary process of preparation two-dimensional nano film can also be: will synthesize the required substrate of two-dimensional nano film and be placed into charging chamber 4, and heat-treat at 4 pairs of substrates of charging chamber, and be delivered to physical vapor deposition chamber 6 through chemical vapor deposition chamber 2 then; At physical vapor deposition chamber 6; Adopt physics vapour deposition system 19 as plasma-deposited system on substrate, to prepare first kind of Catalytic Layer, adopt physics vapour deposition system 20 will on first kind of Catalytic Layer, prepare in second kind of Catalytic Layer then like sputtering depositing system; Afterwards, there is the sample of Catalytic Layer to be delivered to chemical vapor deposition chamber 2 preparation from physical vapor deposition chamber 6; Adopt chemical gas-phase deposition system 17 to prepare the two-dimensional nano film in chemical vapor deposition chamber 2 like the microwave plasma chemical gas-phase deposition system; After the two-dimensional nano film preparation, the two-dimensional nano film sample that makes is delivered to charging chamber 4 from chemical vapor deposition chamber 2, takes out from charging chamber 4 then.
The primary process of preparation two-dimensional nano film can also for: will synthesize required substrate of two-dimensional nano film and/or Catalytic Layer and be placed into charging chamber 4, heat-treat, be delivered to physical vapor deposition chamber 6 then at 4 pairs of substrates of charging chamber and/or Catalytic Layer; At physical vapor deposition chamber 6, the presoma ionization with the two-dimensional nano material is deposited on the Catalytic Layer like laser deposition system to adopt physics vapour deposition system 19; Afterwards, under certain atmosphere, handle at the presoma of 6 pairs of two-dimensional nano materials of physical vapor deposition chamber and form the two-dimensional nano film; After the two-dimensional nano film preparation, with the sample taking-up of preparation.
The presoma of two-dimensional nano material is the compound that contains the element of forming the two-dimensional nano material, is example with the synthesizing graphite alkene, and presoma comprises organism or the polymkeric substance of agraphitic carbon, amorphous carbon-film, carbon elements etc.; With synthetic MoS
2Be example, presoma comprises MoS
2, sulphur powder, MoO
3Powder, (NH
4)
2MoS
4Deng; With the silene is example, and presoma is a silicon chip etc.; With the SP 1 is example, and presoma can be B
3N
3H
6, NH
3-BH
3, Decaboron tetradecahydride/ammonia (decaborane/ammonia) etc.; With SnS is example, and presoma can be Sn powder and FeS
2Powder etc.
Though clearly show and described the utility model with reference to the example embodiment of the utility model; But be understood by those skilled in the art that; Can be under the situation that does not break away from spirit that the utility model that appended claims defines is arranged and scope, to this paper do on the various forms with details on change.
Claims (10)
1. an equipment for preparing the two-dimensional nano film comprises chemical vapor deposition chamber (2), charging chamber (4), and physical vapor deposition chamber (6) and sample transfer device (1) and (8) is characterized in that:
Be respectively equipped with valve between described charging chamber, chemical vapor deposition chamber, each chamber of physical vapor deposition chamber, the charging chamber is provided with the valve with atmosphere;
Described physical vapor deposition chamber (6) is provided with the gas communication port more than or two;
Described physical vapor deposition chamber (6) is provided with physics vapour deposition system;
Described chemical vapor deposition chamber (2) is provided with heating unit (11);
Described chemical vapor deposition chamber (2) is provided with the gas communication port more than or two;
Described charging chamber (4), physical vapor deposition chamber (6) and chemical vapor deposition chamber (2) are equipped with the sample lifting device;
At least one chamber in described charging chamber (4), physical vapor deposition chamber (6) and the chemical vapor deposition chamber (2) is provided with vacuum extractor.
2. the equipment of preparation two-dimensional nano film according to claim 1 is characterized in that described chemical vapor deposition chamber (2) is provided with any one or the combination more than two kinds in plasma reinforced chemical vapor deposition system, microwave plasma CVD system, aerosol assistant chemical vapor deposition system, the inductively coupled plasma chemical gas-phase deposition system.
3. the equipment of preparation two-dimensional nano film according to claim 1 is characterized in that being provided with in the described physical vapor deposition chamber (6) any one or the combination more than two kinds in ion beam depositing system, sputtering depositing system, electron beam deposition system, hot vapor deposition system, laser deposition system, the ion implant systems.
4. the equipment of preparation two-dimensional nano film according to claim 1 is characterized in that described physical vapor deposition chamber (6) is provided with heating unit (13).
5. the equipment of preparation two-dimensional nano film according to claim 1 is characterized in that the chamber wall of described chemical vapor deposition chamber (2) and/or physical vapor deposition chamber (6) is provided with cooling system.
6. the equipment of preparation two-dimensional nano film according to claim 1 is characterized in that being provided with the thermal stabilization shield system in the chamber of described chemical vapor deposition chamber (2) and/or physical vapor deposition chamber (6).
7. the equipment of preparation two-dimensional nano film according to claim 1 is characterized in that described charging chamber (4) is provided with sample processing device (21).
8. the equipment of preparation two-dimensional nano film according to claim 1 is characterized in that described charging chamber (4) is provided with the gas communication port.
9. the equipment of preparation two-dimensional nano film according to claim 1 is characterized in that described physical vapor deposition chamber (6) and/or chemical vapor deposition chamber (4) are provided with the sample swivel arrangement.
10. according to the equipment of each described preparation two-dimensional nano film of claim 1 to 9, it is characterized in that described two-dimensional nano film comprises the class graphene film that other element of the 4th main group constitutes in graphene film, metal chalcogenide compound film, boron nitride pellicle, silene film, germanium alkene film or the periodic table of elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220287247 CN202626285U (en) | 2012-06-18 | 2012-06-18 | Equipment for preparing two-dimensional nano-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220287247 CN202626285U (en) | 2012-06-18 | 2012-06-18 | Equipment for preparing two-dimensional nano-film |
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| Publication Number | Publication Date |
|---|---|
| CN202626285U true CN202626285U (en) | 2012-12-26 |
Family
ID=47379503
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220287247 Expired - Lifetime CN202626285U (en) | 2012-06-18 | 2012-06-18 | Equipment for preparing two-dimensional nano-film |
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|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732834A (en) * | 2012-06-18 | 2012-10-17 | 徐明生 | Apparatus for preparing two-dimensional nanometer film |
| WO2013149572A1 (en) * | 2012-04-02 | 2013-10-10 | Xu Mingsheng | Equipment for large-scale continuous preparation of two-dimensional nanometer thin film |
| CN104630737A (en) * | 2013-11-13 | 2015-05-20 | 中国科学院沈阳科学仪器股份有限公司 | Transmission system used in five-chamber automatic electron beam deposition system |
| CN107036837A (en) * | 2016-10-15 | 2017-08-11 | 湖北喵喵智能物联网科技有限公司 | One kind prepares nano film device rapid sampling attachment |
-
2012
- 2012-06-18 CN CN 201220287247 patent/CN202626285U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013149572A1 (en) * | 2012-04-02 | 2013-10-10 | Xu Mingsheng | Equipment for large-scale continuous preparation of two-dimensional nanometer thin film |
| CN102732834A (en) * | 2012-06-18 | 2012-10-17 | 徐明生 | Apparatus for preparing two-dimensional nanometer film |
| CN104630737A (en) * | 2013-11-13 | 2015-05-20 | 中国科学院沈阳科学仪器股份有限公司 | Transmission system used in five-chamber automatic electron beam deposition system |
| CN107036837A (en) * | 2016-10-15 | 2017-08-11 | 湖北喵喵智能物联网科技有限公司 | One kind prepares nano film device rapid sampling attachment |
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Granted publication date: 20121226 Effective date of abandoning: 20131120 |
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