WO2022151644A1

WO2022151644A1 - Ion beam coating device and coating method therefor

Info

Publication number: WO2022151644A1
Application number: PCT/CN2021/098527
Authority: WO
Inventors: 范江华; 佘鹏程; 周立平; 巴塞; 袁祖浩; 程文进
Original assignee: 中国电子科技集团公司第四十八研究所
Priority date: 2021-01-18
Filing date: 2021-06-07
Publication date: 2022-07-21
Also published as: CN112899633B; CN112899633A

Abstract

Disclosed are an ion beam coating device and a coating method therefor. The device comprises a conveying chamber (2), and a sheet loading/unloading chamber (1), a coating chamber (3), and a cleaning chamber (4) that are connected to the conveying chamber, isolation valves (5) being provided between said chambers, and a transfer mechanism (21) being disposed within the conveying chamber (2). The coating method employs the described device for coating processing. In the present invention, the sheet loading/unloading chamber (1) is used for storing substrates of different types; the conveying chamber (2) transfers substrates between the sheet loading/unloading chamber (1), the coating chamber (3), and the cleaning chamber (4); the coating chamber (3) can simultaneously coat a plurality of substrates and can prepare a plurality of types of film layers; and the cleaning chamber (4) can remove dirt and oxide on the surface of a substrate, thereby improving the adhesive force between a thin film and the substrate. According to the ion beam coating device of the present invention, the continuous cleaning and continuous coating of a substrate can be achieved, and continuous production can be achieved, thus the production efficiency is improved, production costs are reduced, and the requirements of a substrate (such as an infrared device) for a large-size, low-damage and low-temperature coating process can be met.

Description

A kind of ion beam coating equipment and coating method thereof

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based on the Chinese patent application with the filing date of "2021-1-18", the application number of "202110063794.6", and the invention-creation title of "An Ion Beam Coating Equipment and Its Coating Method", and claims its priority, The full text of the Chinese patent application is incorporated herein by reference as a part of the present application.

【Technical field】

The invention relates to an ion beam coating equipment and a coating method thereof.

【Background technique】

Ion beam sputtering coating technology is one of the most important technologies in various coating technologies, and is widely used in the fields of optical components, aero-engines, microelectronic devices and material surface treatment.

The substrate metallization and passivation/insulation layer process requires good adhesion between the film and the substrate, as well as maintaining a low temperature during the deposition process of the substrate and a large uniform area of the deposited film. Therefore, it is necessary to remove the impurity material on the surface of the substrate before coating. However, in the existing coating equipment, cleaning and coating are completed in two different equipment, and there are the following defects: (1) Only a single substrate can be coated, and multiple substrates cannot be coated at the same time. It can realize the simultaneous preparation of different types of films, which cannot be mass-produced; (2) It does not have the function of independent loading and unloading chambers, and the process chamber needs to be opened for each cleaning and coating completion. The vacuum establishment time is long, the effective working time is short, and the coating efficiency is low. (3) Most of the existing ion beam coating equipment are small-sized substrates and manual scientific research equipment, which do not have the automatic adjustment function of cleaning angle and coating angle, nor the online monitoring function of coating film layer; (4) Without a temperature control device and a cooling device, it is impossible to ensure that the infrared device is cleaned and coated at a lower temperature, and it is easy to cause the loss of the infrared device. This is because the infrared device substrate material HgCdTe has special properties and is heated by plasma bombardment. After reaching a certain temperature, mercury atoms can easily escape, which will cause chip damage. In addition, the existing ion beam coating equipment usually uses a multi-faceted target table for multilayer film preparation, which has the phenomenon of cross-contamination. At the same time, the workpiece table does not have an angle adjustment function, so it is difficult to meet the requirements of different crystal orientation materials for the deposition angle of the substrate. The existence of the above-mentioned defects makes it difficult for the existing ion beam coating equipment to meet the requirements of the substrates (such as infrared devices) for large size, high uniformity, low damage, and low temperature coating process.

[Content of the invention]

The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art, and to provide an ion beam coating device and a coating method thereof with simple structure, high film layer purity, and good adhesion between the film and the substrate.

In order to solve the above-mentioned technical problems, the present invention adopts the following technical solutions:

An ion beam coating equipment includes a loading and unloading chamber, a transfer chamber for transferring substrates, at least one coating chamber for substrate coating and a cleaning chamber; the loading and unloading chamber, coating chamber and cleaning The chambers are respectively connected to the transfer chamber; an isolation valve is provided between the loading and unloading chamber and the transfer chamber; an isolation valve is provided between the transfer chamber and the coating chamber; the transfer chamber is connected to the cleaning chamber An isolation valve is arranged between the chambers; a transfer mechanism for transferring substrates is arranged in the transfer chamber.

As a further improvement of the above technical solution:

The transfer chamber is a sphere, and the chip loading and unloading chamber, the coating chamber and the cleaning chamber are distributed around the transfer chamber; or, the transfer chamber is a polyhedron, and the chip loading and unloading chamber, the coating chamber and cleaning chambers are distributed on all sides of the transfer chamber.

The transfer mechanism is a vacuum manipulator; the number of the loading and unloading chambers is 1-2; the number of the coating chambers is 1-5; the number of the cleaning chambers is 1-2 .

Each of the coating chambers is provided with a first rotatable substrate workpiece table for placing substrates, a first regulating device for adjusting the swing angle of the first rotatable substrate workpiece table, and a swingable swing for placing targets. a target workpiece table and a sputtering ion source; the first rotatable substrate workpiece table is connected with a first temperature control device for adjusting the temperature of the substrate and a first monitoring device for monitoring the coating degree of the substrate; the The first temperature control device includes a cooling pipe and a cooling liquid circulating in the cooling pipe, and the cooling pipe is arranged inside or on the surface of the first rotatable substrate workpiece table; the cooling liquid is silicone oil; the temperature of the silicone oil is - 40°C to 150°C; the front side of the first rotatable substrate workpiece table is sequentially provided with a first rotatable substrate baffle mechanism and a movable beam correction plate; the front side of the swingable target workpiece table Equipped with a rotatable target baffle mechanism;

Each of the cleaning chambers is provided with a second rotatable substrate workpiece table for placing substrates, a second regulating device for adjusting the swing angle of the second rotatable substrate workpiece table, and a cleaning ion source; the second rotatable substrate workpiece table is provided with a cleaning ion source; The rotatable substrate workpiece table is connected with a second temperature control device for adjusting the temperature of the substrate and a second monitoring device for monitoring the cleaning degree of the substrate; the second temperature control device includes a cooling pipe and a cooling pipe circulating in the cooling pipe. Cooling liquid, the cooling pipe is arranged inside or on the surface of the second rotatable substrate workpiece table; the cooling liquid is silicone oil; the temperature of the silicone oil is -40°C to 150°C; the second rotatable substrate The front side of the workpiece table is provided with a second rotatable substrate shutter mechanism.

Each of the coating chambers is provided with a maintenance door, and the sputtering ion source is installed on the maintenance door; the side of the sputtering ion source located in the coating chamber is provided with a focusing or parallel grid; A neutralizer for emitting electrons and neutralizing positively charged ion beams is connected to the grid;

Each of the cleaning chambers is provided with a maintenance door, and the cleaning ion source is installed on the maintenance door; the side of the cleaning ion source located in the cleaning chamber is provided with a divergent or parallel grid; the grid A neutralizer for emitting electrons, neutralizing a beam of positively charged ions is connected to the network.

The loading and unloading chamber is provided with a lifting mechanism for lifting substrates; the lifting mechanism is provided with at least two trays for placing substrates; each of the trays is provided with several trays for fixing substrates the fastening hole; the shape of the tray is oval, circle, triangle or polygonal square.

It also includes a vacuuming device and an electronic control device; the vacuuming device and the electronic control device are respectively connected to the loading and unloading chamber, the transfer chamber, the coating chamber and the cleaning chamber.

As a general technical concept, the present invention also provides a coating method, wherein the above-mentioned ion beam coating equipment coats a substrate.

As a further improvement of the above technical solution:

Include the following steps:

S1. Preprocess the substrate;

S2, placing the pretreated substrate in step S1 in the loading and unloading chamber, and transporting it to the cleaning chamber through the transfer chamber for cleaning;

S3. Take out the cleaned substrate in step S2 from the cleaning chamber, and transport it to the coating chamber through the transfer chamber for coating treatment.

In step S1, during the cleaning process, the energy of the ion source is controlled to be 100eV to 500eV, the ion beam current is 50mA to 200mA, and the neutralization beam current is 1 to 2 times the ion beam current; during the cleaning process, The circumferential rotation speed of the substrate is 5rpm～60rpm, the left and right swing angle is -35°～35°, and the temperature is -20°C～80°C;

In step S2, before the coating treatment is performed on the substrate, the target material is also cleaned; during the cleaning treatment of the target material, the energy of the ion source is controlled to be 300eV to 1200eV, the beam current of the ion beam is 50mA to 500mA, and the neutralization beam is controlled. The beam current is 1 to 2 times that of the ion beam; during the cleaning process of the target, the left and right swing angle of the target is -35° to 35°, and the temperature is -20°C to 80°C; the coating treatment During the process, the energy of the ion source is controlled to be 300eV to 1200eV, the ion beam current is 50mA to 500mA, and the neutralization beam current is 1 to 2 times that of the ion beam current; during the coating treatment process, the circumferential rotation speed of the substrate is 5rpm～60rpm, the left and right swing angle is -35°～35°, and the temperature is -20°C～80°C; during the coating process, silicone grease or graphite is applied between the substrate and the first rotatable substrate workpiece table Floor.

Compared with the prior art, the advantages of the present invention are:

(1) The present invention provides an ion beam coating equipment, including a loading and unloading chamber, a transfer chamber for transferring substrates, at least one coating chamber for substrate coating and a cleaning chamber; a loading and unloading chamber, The coating chamber and the cleaning chamber are respectively connected to the transfer chamber; an isolation valve is provided between the loading and unloading chamber and the transfer chamber; an isolation valve is provided between the transfer chamber and the coating chamber; the transfer chamber and the cleaning chamber An isolation valve is arranged between the chambers; a transfer mechanism for transferring the substrate is arranged in the transfer chamber. In the present invention, a loading and unloading chamber is provided for storing different types of substrates, and a variety of different types of substrates can be placed in one loading and unloading. The transport between the chamber and the cleaning chamber is provided with at least one coating chamber, which can realize simultaneous coating of multiple substrates, and can also realize the preparation of various types of film layers. The provided cleaning chamber can be used for The substrate is cleaned to remove dirt and oxides on the surface of the substrate, which greatly improves the adhesion between the film and the substrate. In the present invention, the substrate is transported from the loading and unloading chamber to the cleaning chamber for cleaning through the transport mechanism provided in the transport chamber, and then the substrate is transported from the cleaning chamber to the coating chamber for coating. Finally, the coated substrate is transported from the coating chamber to the loading and unloading chamber. At the same time, during use, the loading and unloading chamber, the transfer chamber, the coating chamber and the cleaning chamber are connected and disconnected through the isolation valve. , When the isolation valve is closed, the loading and unloading chamber, transfer chamber, coating chamber and cleaning chamber will not be exposed to the atmosphere, which can not only ensure the loading and unloading of substrates under the same vacuum conditions, but also reduce the amount of substrates brought into the coating. The amount of water vapor in the chamber will not destroy the vacuum degree of the coating chamber and the cleaning chamber, which can realize the continuous cleaning and continuous coating of the substrate, and greatly reduce the problems of poor film quality caused by the contamination of the chamber and the substrate. It can realize continuous production, improve production efficiency and reduce production cost. The ion beam coating equipment of the invention can meet the requirements of the substrate (such as infrared devices) for large size, high uniformity, low damage and low temperature coating process, and is a simple structure, high purity of the film, and adhesion between the film and the substrate. Good batch ion beam coating equipment.

(2) In the present invention, the first rotatable substrate workpiece table, the swingable target workpiece table and the sputtering ion source are arranged opposite to each other, and the first rotatable substrate workpiece table can be realized by utilizing the swing adjustment effect of the first regulating device. The swing angle of the first rotatable substrate workpiece stage is -90°～65°, and the relative relationship between the substrate, the target and the sputtering ion source is changed by controlling the swing angle of the first rotatable substrate workpiece stage. The angle can be used to optimize the uniformity of the coating process, the coating area and the coating rate, which is beneficial to improve the uniformity and coating area of the coating. Angle, so that the coating angle can meet the coating requirements of materials with different crystal orientations, which is beneficial to improve the coating rate of the film layer.

(3) In the present invention, a first temperature control device is arranged inside or on the surface of the first rotatable substrate workpiece stage, and the first rotatable substrate workpiece stage is equipped with low temperature control control by utilizing the temperature adjustment effect of the first temperature control device. It can realize the adjustable temperature range of the rotatable workpiece table from -40°C to 150°C, which can meet the low temperature coating process requirements for infrared device substrates such as mercury cadmium telluride and substrates with photoresist.

(4) In the present invention, by connecting the first monitoring device on the first rotatable substrate workpiece stage, the coating chamber has the coating thickness monitoring function, which can realize the online accurate monitoring of the coating film thickness of the substrate, and solve the problem of inconsistent coating. Problems with uniform or overcoating.

(5) In the present invention, the first rotatable substrate baffle mechanism is located on the front side of the first rotatable substrate workpiece table, and is used to block or open the first rotatable substrate workpiece table, which can realize the protection of the first rotatable substrate workpiece table. The shielding or opening of the substrate workpiece table, when the first rotatable substrate workpiece table is blocked, the first rotatable substrate baffle mechanism is concentric with the first rotatable substrate workpiece table to protect the unstable beam during initial discharge of the ion source The flow damages the substrate, moving the first rotatable substrate shutter mechanism away from the front side of the first rotatable substrate workpiece stage during the coating process.

(6) In the present invention, the movable beam current correction plate is located on the front side of the first rotatable substrate baffle mechanism, and the distance between the movable beam current correction plate and the sputtering ion source can be adjusted, so that the partial area of the ion source beam current can be shielded, It has the function of adjusting the shape of the coating, which can improve the uniformity of the coating, and finally achieve a large-scale and high-uniform coating.

【Description of drawings】

To make the purposes, technical solutions, and advantages of the embodiments of the present invention clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention.

FIG. 1 is a schematic diagram of the layout of the ion beam coating equipment of the present invention.

FIG. 2 is a schematic diagram of the layout of the coating chamber in the ion beam coating apparatus of the present invention.

3 is a schematic diagram of the layout of the cleaning chamber in the ion beam coating apparatus of the present invention.

illustration:

1. Loading and unloading chamber; 2. Transfer chamber; 21. Transfer mechanism; 3. Coating chamber; 31. First rotatable substrate workpiece table; 32. First temperature control device; 33. First control device; 34. First rotatable substrate baffle mechanism; 35. Swingable target workpiece table; 36. Rotatable target baffle mechanism; 37. Sputtering ion source; 4. Cleaning chamber; 41. Second rotatable Substrate workpiece table; 42, second regulating device; 43, second rotatable substrate baffle mechanism; 44, cleaning ion source; 5, isolation valve.

【Detailed ways】

The present invention will be further described below with reference to the accompanying drawings and specific preferred embodiments, but the protection scope of the present invention is not limited thereby.

Example 1

As shown in FIG. 1, FIG. 2 and FIG. 3, the ion beam coating apparatus of this embodiment includes a loading and unloading chamber 1, a transfer chamber 2 for transferring substrates, and at least one coating chamber 3 for substrate coating And the cleaning chamber 4; the loading and unloading chamber 1, the coating chamber 3 and the cleaning chamber 4 are respectively connected to the transfer chamber 2; an isolation valve 5 is provided between the loading and unloading chamber 1 and the transfer chamber 2; the transfer chamber An isolation valve 5 is provided between the chamber 2 and the coating chamber 3 ; an isolation valve 5 is provided between the transfer chamber 2 and the cleaning chamber 4 ; the transfer chamber 2 is provided with a transfer mechanism 21 for transferring substrates.

In the present invention, a loading and unloading chamber 1 is provided for storing different types of substrates, and a variety of different types of substrates can be placed in one loading and unloading. 1. The transfer between the coating chamber 3 and the cleaning chamber 4, at least one coating chamber 3 is set up, which can realize simultaneous coating of multiple substrates, and can also realize the preparation of various types of film layers, and the set cleaning The chamber 4 can be used to clean the substrate, remove dirt and oxides on the surface of the substrate, and greatly improve the adhesion between the film and the substrate. In the present invention, the substrate is transported from the loading and unloading chamber 1 to the cleaning chamber 4 for cleaning through the transport mechanism 21 provided in the transport chamber 2, and then the substrate is transported from the cleaning chamber 4 to the coating chamber Coating is performed in chamber 3, and finally the coated substrate is transported from coating chamber 3 to loading and unloading chamber 1. At the same time, during use, the loading and unloading chamber 1 and transfer chamber 2 are realized through isolation valve 5. , When the coating chamber 3 and the cleaning chamber 4 are turned on and off, and the isolation valve 5 is closed, the loading and unloading chamber 1, the transfer chamber 2, the coating chamber 3 and the cleaning chamber 4 will not be exposed to the atmosphere. To ensure that the substrate is loaded and unloaded under the same vacuum conditions, the amount of water vapor brought into the coating chamber by the substrate is reduced, and the vacuum degree of the coating chamber 3 and the cleaning chamber 4 will not be damaged. Continuous cleaning and cleaning of the substrate can be achieved. Continuous coating can greatly reduce the problems of poor film quality caused by the contamination of the cavity and the substrate, which can realize continuous production, improve production efficiency and reduce production costs. The ion beam coating equipment of the invention can meet the requirements of the substrate (such as an infrared device) for the coating process of large size, low damage and low temperature.

In this embodiment, the transfer chamber 2 is a polyhedron, the chip loading and unloading chamber 1, the coating chamber 3 and the cleaning chamber 4 are distributed on each surface of the transfer chamber 2, wherein the number of the chip loading and unloading chambers 1 is one, It is located at the bottom of the transfer chamber 2; the number of coating chambers 3 is 4, which are located around and above the transfer chamber 2; the number of cleaning chambers 4 is 1, which is located around the transfer chamber 2. In addition, in the present invention, the transfer chamber 2 can also be a sphere, wherein the arrangement of the wafer loading and unloading chamber 1, the coating chamber 3 and the cleaning chamber 4 can be adjusted according to the actual situation, for example, the loading and unloading chamber 1, the coating The chamber 3 and the cleaning chamber 4 are distributed around the transfer chamber 2, including the bottom, the top and the periphery.

In this embodiment, the transfer mechanism 21 is a vacuum manipulator.

In this embodiment, each coating chamber 3 is provided with a first rotatable substrate workpiece table 31 for placing substrates, a first regulating device 33 for adjusting the swing angle of the first rotatable substrate workpiece table 31, A swingable target workpiece table 35 and a sputtering ion source 37 for placing the target; the first rotatable substrate workpiece table 31 is connected with a first temperature control device 32 for adjusting the temperature of the substrate and for monitoring the substrate The first monitoring device for the degree of coating; the first temperature control device 32 includes a cooling pipe and a cooling liquid circulating in the cooling pipe, and the cooling pipe is arranged inside or on the surface of the first rotatable substrate workpiece stage 31; the cooling liquid is silicone oil; silicone oil The temperature is -40°C to 150°C; the front side of the first rotatable substrate workpiece table 31 is sequentially provided with a first rotatable substrate baffle mechanism 34 and a movable beam correction plate; the swingable target workpiece table 35 There is a rotatable target baffle mechanism 36 on the front side of the . In the present invention, the first rotatable substrate workpiece table 31 , the swingable target workpiece table 35 and the sputtering ion source 37 are arranged opposite to each other, and the first rotatable substrate workpiece can be realized by using the swing adjustment effect of the first regulating device 33 The swing of the table 31, wherein the swing angle of the first rotatable substrate workpiece table 31 is -90°～65°, and then the substrate, the target material and the sputtering can be changed by controlling the swing angle of the first rotatable substrate workpiece table 31 The relative angle of the ion source can be used for optimal adjustment of the uniformity of the coating process, the coating area and the coating rate, which is beneficial to improve the uniformity and coating area of the coating; at the same time, by adjusting the rotation speed and The swing angle improves the coating angle, so that the coating angle can meet the coating requirements of materials with different crystal orientations, which is beneficial to improve the coating rate of the film layer. In the present invention, a first temperature control device 32 is arranged inside or on the surface of the first rotatable substrate workpiece table 31, and the first rotatable substrate workpiece table 31 is equipped with low temperature control by utilizing the temperature adjustment function of the first temperature control device 32. The control function can realize the temperature adjustable range of the rotatable workpiece table 31 to be -40°C to 150°C, which can meet the requirements of infrared device substrates such as mercury cadmium telluride and substrates with photoresist for low temperature coating process. In the present invention, by connecting the first monitoring device on the first rotatable substrate workpiece stage 31, the coating chamber 3 has the coating thickness monitoring function, which can realize the online accurate monitoring of the coating thickness of the substrate, and solve the problem of uneven coating. Or the problem of overcoating. In the present invention, the first rotatable substrate shutter mechanism 34 is located on the front side of the first rotatable substrate workpiece table 31, and is used to block or open the first rotatable substrate workpiece table 31, so as to realize the protection of the first rotatable substrate workpiece table 31. The blocking or opening of the substrate workpiece table 31, when the first rotatable substrate workpiece table 31 is blocked, the first rotatable substrate shutter mechanism 34 is concentric with the first rotatable substrate workpiece table 31 to protect the initial discharge of the ion source When the unstable beam damages the substrate, the first rotatable substrate shutter mechanism 34 is moved away from the front side of the first rotatable substrate workpiece stage 31 during the coating process. In the present invention, the movable beam current correction plate is located on the front side of the first rotatable substrate baffle mechanism 34, and the distance between the movable beam current correction plate and the sputtering ion source 37 can be adjusted, which can achieve partial area shielding of the ion source beam current. The function of adjusting the shape of the coating can improve the uniformity of the coating, and finally achieve a large-scale and high-uniform coating.

Each cleaning chamber 4 is provided with a second rotatable substrate workpiece table 41 for placing substrates, a second regulating device 42 for adjusting the swing angle of the second rotatable substrate workpiece table 41, and a cleaning ion source 44; The second rotatable substrate work table 41 is connected with a second temperature control device for adjusting the temperature of the substrate and a second monitoring device for monitoring the cleaning degree of the substrate; the second temperature control device includes a cooling pipe and a circulation in the cooling pipe Cooling liquid, the cooling pipe is arranged inside or on the surface of the second rotatable substrate workpiece table 41; the cooling liquid is silicone oil; the temperature of the silicone oil is -40°C to 150°C; the front side of the second rotatable substrate workpiece table 41 A second rotatable substrate shutter mechanism 43 is provided. In the present invention, the second rotatable substrate workpiece table 41 and the cleaning ion source 44 are arranged opposite to each other, and the swing adjustment effect of the second regulating device 42 can be used to realize the swing of the second rotatable substrate workpiece table 41, wherein the second rotatable substrate workpiece table 41 is oscillated. The swing angle of the rotating substrate workpiece table 41 is -90° to 65°, and the relative angle of the substrate, the target material and the cleaning ion source can be changed by controlling the swing angle of the second rotatable substrate workpiece table 41, which can be used in the cleaning process. The optimized adjustment of uniformity, cleaning area and cleaning rate is beneficial to improve cleaning uniformity and cleaning area; at the same time, by adjusting the rotation speed and swing angle of the second rotatable substrate workpiece table 41, the cleaning angle is improved, so that the cleaning angle It can meet the cleaning needs of materials with different crystal orientations, and is beneficial to improve the cleaning rate. In the present invention, a second temperature control device is arranged inside or on the surface of the second rotatable substrate workpiece table 41, and the second rotatable substrate workpiece table 41 has a low temperature control function by utilizing the temperature adjustment function of the second temperature control device. , the temperature of the second rotatable substrate workpiece stage 41 can be adjusted in the range of -40°C to 150°C, which can meet the low temperature cleaning process requirements for infrared device substrates such as mercury cadmium telluride and substrates with photoresist. In the present invention, by connecting the second monitoring device on the second rotatable substrate workpiece table 41, the cleaning chamber 4 has a cleaning condition monitoring function, which can realize online accurate monitoring of the substrate cleaning condition, and solve the problem of unclean or excessive cleaning. cleaning problem. In the present invention, the second rotatable substrate shutter mechanism 43 is located on the front side of the second rotatable substrate workpiece table 41, and is used to block or open the second rotatable substrate workpiece table 41, so as to realize the protection of the second rotatable substrate workpiece table 41. The blocking or opening of the substrate workpiece stage 41, when the second rotatable substrate workpiece stage 41 is blocked, the second rotatable substrate shutter mechanism 43 is concentric with the second rotatable substrate workpiece stage 41 to protect the initial discharge of the ion source When the unstable beam damages the substrate, the second rotatable substrate shutter mechanism 43 is moved away from the front side of the second rotatable substrate work table 41 during the coating process.

In this embodiment, each coating chamber 3 is provided with a maintenance door, and the sputtering ion source 37 is installed on the maintenance door; the side of the sputtering ion source 37 located in the coating chamber 3 is provided with a focusing grid; A neutralizer for emitting electrons and neutralizing a positively charged ion beam is connected to the grid. In the present invention, the sputtering ion source 37 is installed on the maintenance door of the coating chamber 3, and the maintenance space of the sputtering ion source 37 can be increased by moving the maintenance door, without taking the sputtering ion source 37 out of the chamber, The maintenance time of the sputtering ion source 37 is greatly shortened, and the production efficiency is improved. In the present invention, the grid provided on the side of the sputtering ion source 37 in the coating chamber 3 may also be a parallel-type (also referred to as a plane-type) grid.

Each cleaning chamber 4 is provided with a maintenance door, and the cleaning ion source 44 is installed on the maintenance door; the side of the cleaning ion source 44 located in the cleaning chamber 4 is provided with a diverging grid; , Neutralizer with positively charged ion beam. In the present invention, the cleaning ion source 44 is installed on the maintenance door of the cleaning chamber 4, the maintenance space of the cleaning ion source 44 can be increased by moving the maintenance door, and the cleaning ion source 44 does not need to be taken out of the chamber, which greatly shortens the The maintenance time of cleaning the ion source 44 is improved, and the production efficiency is improved. In the present invention, the grid provided on the side of the cleaning ion source 44 in the cleaning chamber 4 may also be a parallel type (also referred to as a plane type) grid.

In this embodiment, the loading and unloading chamber 1 is provided with a lifting mechanism for lifting substrates; the lifting mechanism is provided with at least two trays for placing substrates; each tray is provided with several trays for fixing substrates the fastening holes; the shape of the tray is circular. In the present invention, multiple trays are provided, not only can the pre-coated substrate and the coated substrate be placed separately to improve the cleaning and coating efficiency, but also different types of substrates can be placed separately, and a variety of different types can be realized by one loading The cleaning and coating of substrates have various functions. In the present invention, several fastening holes are arranged on the tray, which can realize the compatible loading of substrates of different specifications, such as the substrates that can be compatible with different rules such as round, square or special-shaped. In the present invention, the shape of the tray can also be oval, triangular or polygonal.

In this embodiment, a vacuuming device and an electric control device are also included; In the present invention, the vacuum degree required for cleaning and coating in the loading and unloading chamber 1, the transfer chamber 2, the coating chamber 3 and the cleaning chamber 4 is controlled by the vacuuming action of the vacuuming device; at the same time, through the electronic control device (such as computer and PLC) control the ion source, workpiece table, baffle mechanism, transfer mechanism, lifting mechanism, vacuum device, etc., and can automatically track and adjust the size of the ion beam according to the ion source parameters, without human intervention, reducing labor costs while improving the repeatability of the process.

A coating method, which uses the above-mentioned ion beam coating equipment to coat a substrate, comprising the following steps:

S1. Preprocess the substrate (infrared device);

S2, placing the pretreated substrate in step S1 in the loading and unloading chamber 1, and transporting it to the cleaning chamber 4 through the transfer chamber 2 for cleaning treatment, specifically:

S2-1. Transfer the pretreated substrate in step S1 to the cleaning chamber 4: (a) place the pretreated substrate in the tray in the loading and unloading chamber 1, and fix it with fastening holes; (b) vacuumize the loading and unloading chamber 1, transfer chamber 2, coating chamber 3, and cleaning chamber 4 with a vacuum device; (c) open the space between the loading and unloading chamber 1 and transfer chamber 2 Isolation valve 5 and transfer the substrate into the transfer chamber 2 under vacuum conditions through the lifting mechanism, then close the isolation valve 5 between the loading and unloading chamber 1 and the transfer chamber 2, and open the transfer chamber 2 and the cleaning chamber The isolation valve 5 between the chambers 4 uses a vacuum manipulator to transfer the substrate to the cleaning chamber 4 and is fixed on the second rotatable substrate workpiece table 41 to close the isolation between the transfer chamber 2 and the cleaning chamber 4 valve 5.

S2-2, cleaning the substrate fixed in the cleaning chamber 4, wherein during the cleaning process, the energy of the ion source is controlled to be 100eV～500eV, the beam current of the ion beam is 50mA～200mA, and the beam current of the neutralizing beam is the ion beam 1 to 2 times of the beam current, the circumferential rotation speed of the substrate is 5 rpm to 60 rpm, the left and right swing angle is -35° to 35°, and the temperature is -20°C to 80°C. Meanwhile, during the cleaning process, the second monitoring device is used to monitor the cleaning of the substrate surface until the impurity materials on the substrate surface are effectively removed.

S3. Take out the cleaned substrate in step S2 from the cleaning chamber 4, and transport it to the coating chamber 3 through the transfer chamber 2 for coating treatment, specifically:

S3-1. Transfer the cleaned substrate in step S2 to the coating chamber 3: open the isolation valve 5 between the cleaning chamber 4 and the transfer chamber 2, and transfer the substrate to a vacuum condition by a vacuum manipulator inside the coating chamber 3 and fixed on the first rotatable substrate workpiece stage 31, and a silicone grease is arranged between the substrate and the first rotatable substrate workpiece stage 31 to improve the The thermal conductivity between the sheet workpiece tables 31 is then closed, and then the isolation valve 5 between the cleaning chamber 4 and the transfer chamber 2 is closed.

S3-2. Clean the target fixed in the coating chamber 3. During the cleaning process of the target, the energy of the ion source is controlled to be 300eV～1200eV, the ion beam current is 50mA～500mA, and the beam current is neutralized It is 1 to 2 times the current of the ion beam, the left and right swing angle of the target is -35° to 35°, and the temperature is -20°C to 80°C. At the same time, the cleaning of the target is monitored during the cleaning process until the impurity materials on the surface of the target are effectively removed.

S3-3, using the target material cleaned in step S2 to perform coating treatment on the substrate fixed in the coating chamber 3, wherein the ion source energy is controlled to be 300eV～1200eV during the coating process, and the ion beam current is 50mA～500mA, The neutralization beam current is 1 to 2 times that of the ion beam current; during the coating process, the circumferential rotation speed of the substrate is 5rpm to 60rpm, the left and right swing angle is -35° to 35°, and the temperature is -20°C to 80°C. At the same time, during the coating process, the first monitoring device is used to monitor the coating degree of the substrate until the thickness of the coating reaches the set requirement.

S4. Step S3 is repeated to deposit different types of thin films on the same substrate.

S5. Open the isolation valve 5 between the transfer chamber 2 and the coating chamber 3, use a vacuum manipulator to transfer the substrate to the tray, take out the substrate through the loading and unloading chamber 1, and complete the coating on the substrate.

The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited to the above embodiments. All the technical solutions under the idea of the present invention belong to the protection scope of the present invention. It should be pointed out that for those skilled in the art, improvements and modifications without departing from the principles of the present invention should also be regarded as the protection scope of the present invention.

Claims

An ion beam coating equipment is characterized in that it comprises a loading and unloading chamber (1), a transfer chamber (2) for transferring substrates, at least one coating chamber (3) for substrate coating and a cleaning chamber (4); the tablet loading and unloading chamber (1), the coating chamber (3) and the cleaning chamber (4) are respectively connected to the transfer chamber (2); the tablet loading and unloading chamber (1) is connected to the transfer chamber An isolation valve (5) is arranged between the chambers (2); an isolation valve (5) is arranged between the transfer chamber (2) and the coating chamber (3); the transfer chamber (2) and the cleaning chamber An isolation valve (5) is arranged between the chambers (4); a transfer mechanism (21) for transferring substrates is arranged in the transfer chamber (2).
The ion beam coating equipment according to claim 1, characterized in that, the transfer chamber (2) is a sphere, the loading and unloading chamber (1), the coating chamber (3) and the cleaning chamber (4) Distributed around the transfer chamber (2); or, the transfer chamber (2) is a polyhedron, and the sheet loading and unloading chamber (1), the coating chamber (3) and the cleaning chamber (4) are distributed in the transfer chamber (2). on all sides of the chamber (2).
The ion beam coating equipment according to claim 2, wherein the transfer mechanism (21) is a vacuum manipulator; the number of the loading and unloading chambers (1) is 1-2; the coating chamber The number of (3) is 1 to 5; the number of the cleaning chambers (4) is 1 to 2.
The ion beam coating equipment according to any one of claims 1 to 3, characterized in that, each of the coating chambers (3) is provided with a first rotatable substrate workpiece table (31) for placing the substrates ), a first regulating device (33) for adjusting the swing angle of the first rotatable substrate workpiece table (31), a swingable target workpiece table (35) for placing the target, and a sputtering ion source (37) ; The first rotatable substrate workpiece table (31) is connected with a first temperature control device (32) for adjusting the temperature of the substrate and a first monitoring device for monitoring the coating degree of the substrate; the first control device (32) The temperature device (32) comprises a cooling pipe and a cooling liquid circulating in the cooling pipe, the cooling pipe is arranged inside or on the surface of the first rotatable substrate workpiece table (31); the cooling liquid is silicone oil; The temperature is -40°C to 150°C; the front side of the first rotatable substrate workpiece table (31) is sequentially provided with a first rotatable substrate baffle mechanism (34) and a movable beam correction plate; the The front side of the swingable target workpiece table (35) is provided with a rotatable target baffle mechanism (36);

Each of the cleaning chambers (4) is provided with a second rotatable substrate workpiece table (41) for placing substrates, and a second regulation for adjusting the swing angle of the second rotatable substrate workpiece table (41). A device (42) and a cleaning ion source (44); the second rotatable substrate workpiece table (41) is connected with a second temperature control device for adjusting the temperature of the substrate and a second temperature control device for monitoring the cleaning degree of the substrate Monitoring device; the second temperature control device comprises a cooling pipe and a cooling liquid circulating in the cooling pipe, the cooling pipe is arranged inside or on the surface of the second rotatable substrate workpiece table (41); the cooling liquid is silicone oil the temperature of the silicone oil is -40°C to 150°C; the front side of the second rotatable substrate workpiece table (41) is provided with a second rotatable substrate baffle mechanism (43).
The ion beam coating equipment according to claim 4, characterized in that, each coating chamber (3) is provided with a maintenance door, and the sputtering ion source (37) is installed on the maintenance door; the sputtering ion source (37) is installed on the maintenance door; One side of the radiation ion source (37) located in the coating chamber (3) is provided with a focusing or parallel grid; the grid is connected with a neutralizer for emitting electrons, neutralizing a positively charged ion beam;

Each cleaning chamber (4) is provided with a maintenance door, and the cleaning ion source (44) is installed on the maintenance door; a side of the cleaning ion source (44) located in the cleaning chamber (4) is provided with There are grids of diverging or parallel type; the grids are connected to neutralizers for emitting electrons, neutralizing a beam of positively charged ions.
The ion beam coating equipment according to any one of claims 1 to 3, wherein a lifting mechanism for lifting and lowering the substrate is provided in the loading and unloading chamber (1); the lifting mechanism is provided with at least Two trays for placing substrates; each of the trays is provided with several fastening holes for fixing the substrates; the trays are in the shape of an oval, a circle, a triangle or a polygonal square.
The ion beam coating equipment according to any one of claims 1 to 3, characterized in that, further comprising a vacuum pumping device and an electric control device; the vacuum pumping device and the electronic control device are respectively connected to the loading and unloading chambers (1 ), transfer chamber (2), coating chamber (3) and cleaning chamber (4).
A coating method, characterized in that, the coating method is to use the ion beam coating equipment according to any one of claims 1 to 7 to coat a substrate.
coating method according to claim 8, is characterized in that, comprises the following steps:

S1. Preprocess the substrate;

S2, placing the pretreated substrate in step S1 in the loading and unloading chamber (1), and transporting it to the cleaning chamber (4) through the transfer chamber (2) for cleaning;

S3. The substrate cleaned in step S2 is taken out from the cleaning chamber (4), and transported through the transfer chamber (2) to the coating chamber (3) for coating treatment.
The coating method according to claim 9, wherein in step S1, during the cleaning process, the energy of the ion source is controlled to be 100eV～500eV, the beam current of the ion beam is 50mA～200mA, and the beam current of the neutralizing beam is the ion beam 1 to 2 times the beam current; during the cleaning process, the circumferential rotation speed of the substrate is 5rpm to 60rpm, the left and right swing angle is -35° to 35°, and the temperature is -20°C to 80°C;

In step S2, before the coating treatment is performed on the substrate, the target material is also cleaned; during the cleaning treatment of the target material, the energy of the ion source is controlled to be 300eV to 1200eV, the beam current of the ion beam is 50mA to 500mA, and the neutralization beam is controlled. The beam current is 1 to 2 times that of the ion beam; during the cleaning process of the target, the left and right swing angle of the target is -35° to 35°, and the temperature is -20°C to 80°C; the coating treatment During the process, the energy of the ion source is controlled to be 300eV～1200eV, the beam current of the ion beam is 50mA～500mA, and the beam current of the neutralization beam is 1～2 times of the beam current of the ion beam; during the coating treatment process, the circumferential rotation speed of the substrate is 5 rpm to 60 rpm, the left and right swing angles are -35° to 35°, and the temperature is -20° C. to 80° C. During the coating process, silicon is coated between the substrate and the first rotatable substrate workpiece stage (31). grease or graphite layer.