CN115612980B - Dual-purpose device of ion beam cleaning and ion beam sputter coating - Google Patents
Dual-purpose device of ion beam cleaning and ion beam sputter coating Download PDFInfo
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- CN115612980B CN115612980B CN202211074818.9A CN202211074818A CN115612980B CN 115612980 B CN115612980 B CN 115612980B CN 202211074818 A CN202211074818 A CN 202211074818A CN 115612980 B CN115612980 B CN 115612980B
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 66
- 238000004140 cleaning Methods 0.000 title claims abstract description 37
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000012546 transfer Methods 0.000 claims abstract description 31
- 230000007246 mechanism Effects 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims abstract description 28
- 238000007747 plating Methods 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 23
- 238000001816 cooling Methods 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 12
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 15
- 238000007733 ion plating Methods 0.000 abstract description 10
- 230000002285 radioactive effect Effects 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 238000004381 surface treatment Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 238000000605 extraction Methods 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000012857 radioactive material Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000007769 metal material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000011824 nuclear material Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001196 time-of-flight mass spectrum Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a surface treatment device, in particular to a device for cleaning by an ion beam and sputtering and coating by the ion beam, which comprises an ion source, a chamber and a vacuum system; the chamber comprises a sample transfer mechanism and a sample delivery door; the sample transfer mechanism is fixed on the top wall of the chamber and is used for transferring the substrate and the target; the sample feeding door is arranged on the side wall of the cavity and is used for feeding the substrate and the target into or taking out of the cavity; the side wall of the chamber is also provided with an opening for passing the ion beam and an air exhaust hole; the ion source is communicated with the cavity through the opening, and an ion beam led out from the ion source is injected into the cavity through the opening; the vacuum system is communicated with the cavity through the air suction hole. Compared with the prior art, the device can be used for pretreatment of a coating process and surface radioactive metal coating. The ion plating and ion cleaning can be carried out without damaging vacuum conditions in actual operation, the ion cleaning and the ion plating are effectively combined into a whole, and the treatment efficiency of the plating process is greatly improved.
Description
Technical Field
The invention relates to a surface treatment device, in particular to a device for cleaning by an ion beam and coating by sputtering by the ion beam.
Background
The method for cleaning the metal surface coating can be generally divided into a chemical method and a physical cleaning method, wherein the chemical method generally refers to water treatment, acid reacts with a stainless steel matrix or a special material, then a target material is extracted by methods such as filtration and extraction, the reaction is complex, and side reactants are more likely to pollute the environment. Physical methods include surface grinding, abrasive machining, laser ablation, ion cleaning, and the like.
When the plating plate is coated, in order to form a film with good uniformity and high bonding strength, the surface of the plating plate needs to be pretreated, and the surface of a substrate is rough after polishing or laser ablation, so that the requirement of coating can not be met. The ion cleaning method has small influence on the surface structure of the plating plate, and meanwhile, the surface scratches and impurities can be cleaned, so that the ion cleaning method is suitable for the surface pretreatment of the plating plate before plating; meanwhile, sputtering particles generated by ion cleaning can be combined with a plating plate to form a compact film, and the durability is good, so that the ion cleaning and the ion plating are two complementary technical processes.
The radioactive metal material can not directly contact with human body due to its own radioactivity, chemical activity, toxicity and the like, and brings great inconvenience to operators when manufacturing devices related to the radioactive metal material; the ion cleaning is used as a material surface treatment method, has the advantages of small damage to a substrate and clean treatment, and simultaneously can well solve the problems of removing and collecting radioactive materials on the surface of a device because metal particles generated by ion sputtering can form a compact film with a plating plate.
In the prior art, there are few devices for combining ion cleaning and ion plating, and the devices are generally not suitable for ion cleaning or ion plating of materials such as radioactive metal materials, so that a device which can be suitable for materials such as radioactive metal materials and can integrate ion cleaning and ion plating needs to be designed.
Disclosure of Invention
The present invention has been made to solve at least one of the above problems, and an object of the present invention is to provide an ion beam cleaning and ion beam sputtering coating apparatus which can be used for pretreatment of coating process and surface-emitting metal coating. The ion plating and ion cleaning can be carried out without damaging vacuum conditions in actual operation, the ion cleaning and the ion plating are effectively combined into a whole, and the treatment efficiency of the plating process is greatly improved.
The aim of the invention is achieved by the following technical scheme:
An ion beam cleaning and ion beam sputtering coating dual-purpose device comprises an ion source, a chamber and a vacuum system;
the cavity comprises a sample transferring mechanism and a sample delivering door; the sample transfer mechanism is fixed on the top wall of the cavity and is used for transferring the substrate and the target; the sample feeding door is arranged on the side wall of the cavity and is used for feeding or taking out the base material and the target material into or from the cavity; the side wall of the chamber is also provided with an opening for passing the ion beam and an air exhaust hole;
The ion source is communicated with the cavity through the opening, and an ion beam led out from the ion source is injected into the cavity through the opening; the vacuum system is communicated with the cavity through the air suction hole;
when the device performs ion beam cleaning, the sample transfer mechanism transfers the substrate to the front of the ion beam;
When the device is used for ion beam sputtering coating, the sample transfer mechanism transfers the substrate to the side edge of the chamber, transfers the target to the front of the ion beam, and turns the target to enable the substrate to be positioned in front of the sputtering particle beam formed by sputtering.
Preferably, the ion source gas used in the ion source is Kr gas.
Preferably, the filament current of the ion source is 5-10A, the ion beam energy of the extracted ion beam is 800-1500eV, and the beam intensity is 0.1A.
Preferably, the vacuum system is a two-stage pump set of a mechanical pump and a molecular pump.
Preferably, when the device is operated, the pressure in the cavity is pumped to 3X 10 -4 Pa through a vacuum system, and then the ion source gas is introduced to enable the vacuum degree of the cavity to be 1.5-2.2X 10 -2 Pa.
Preferably, the chamber further comprises a plating plate, and the plating plate is fixed on the side wall of the chamber; when the device is used for ion beam sputtering coating, the sample transfer mechanism transfers the substrate to the front of the plating plate.
Preferably, in the ion beam sputtering coating process of the device, the target is suspended below the sample transfer mechanism, and the angle between the target and the ion beam is regulated to be 30-60 degrees by controlling the sample transfer mechanism. The micro motor is arranged in the sample transferring mechanism, and the movement of the base material and the target material on the sample transferring mechanism and the rotation of the target material are controlled by controlling the micro motor.
Preferably, the device further comprises a cooling system penetrating into the cavity for cooling the substrate and the target during ion beam sputtering coating.
Preferably, the cooling system adopts a water cooling mode for cooling.
Preferably, the device is disposed within a glove box.
The working principle of the invention is as follows:
The device obtains vacuum through a mechanical pump and a molecular pump, the chamber is vacuumized to be below 3 multiplied by 10 -4 Pa through the two-stage pump, then small flow Kr gas is introduced into an ionization chamber of an ion source to be used as ion source gas, the vacuum is maintained between 1.5 and 2.2 multiplied by 10 -2 Pa at the moment, the filament current is maintained between 5 and 10A through adjusting an ion source controller, and Kr ion beam with the energy of 800eV and the beam intensity of 0.1A is obtained through adjusting the ion extraction voltage, and the Kr ion beam is extracted to perform sputtering reaction with a material on the surface of a substrate, so that pollutants on the surface of the substrate are cleaned; when the ion beam is coated, a Kr ion beam with the beam energy of 1500eV and the beam intensity of 0.1A is obtained by adopting the same method, and the sputtering effect of the ion beam ensures that the sputtering of target particles has higher energy and can be combined with a base material to form a compact film.
Compared with the prior art, the invention has the following beneficial effects:
The device combines two emerging technologies of ion beam cleaning and ion beam coating, can pretreat a base material and coat a radioactive material, and effectively improves the quality and the working efficiency of the coated film of the base material after the surface coating treatment process; in addition, the device is operated in the glove box, so that the contact between operators and radioactive materials is avoided, and the operators are protected from being influenced by irradiation.
The device is used for pretreatment of a coating process and surface radioactive metal coating, and can carry out ion coating and ion cleaning without damaging vacuum conditions in actual operation, so that the ion cleaning and the ion coating are effectively combined into a whole, and the treatment efficiency of the coating process is greatly improved.
The device combines the advantages of two treatment technologies of ion plating and ion cleaning, and effectively solves the problems of pretreatment of the surface of a substrate and plating of radioactive materials.
Drawings
FIG. 1 is a schematic view of the structure of a chamber of the device;
FIG. 2 is a schematic top view of the interior of the chamber of the present apparatus;
in the figure: 1-a chamber; 2-a sample transfer mechanism; 3-sample feeding gate; 4-an air suction hole; 5-target material; 6-a substrate; 7-plating a plate; 8-perforating; 9-ion beam; 10-sputtering the particle beam.
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples.
Example 1
An ion beam cleaning and ion beam sputtering coating device is shown in fig. 1 and 2, and comprises an ion source, a chamber 1 and a vacuum system;
The chamber 1 comprises a sample transfer mechanism 2 and a sample feeding door 3; the sample transferring mechanism 2 is fixed on the top wall of the chamber 1 and is used for transferring the substrate 6 and the target 5; the sample feeding door 3 is arranged on the side wall of the chamber 1 and is used for feeding the substrate 6 and the target 5 into or out of the chamber 1; the side wall of the chamber 1 is also provided with an opening 8 for passing an ion beam 9 and an air extraction hole 4;
The ion source is communicated with the chamber 1 through the opening 8, and an ion beam 9 led out from the ion source is injected into the chamber 1 through the opening 8; the vacuum system is communicated with the chamber 1 through the air suction hole 4;
when the device is used for ion beam cleaning, the sample transferring mechanism 2 transfers the substrate 6 to the front of the ion beam 9;
When the ion beam sputtering coating is carried out on the device, the sample transferring mechanism 2 transfers the substrate 6 to the side edge of the interior of the chamber 1, transfers the target 5 to the front of the ion beam 9, and turns the target 5 to enable the substrate 6 to be positioned in front of a sputtering particle beam 10 formed by sputtering.
More specifically, in the present embodiment:
the device is arranged in the glove box, an operator operates through the glove box, so that the operator is prevented from being directly contacted with the radioactive material, and the operator is protected from being damaged by irradiation.
The device is integrally composed of an ion source, a chamber 1 and a vacuum system.
The top of the chamber 1 is provided with a sample transfer mechanism 2, a sample feeding door 3 and an opening 8 for passing an ion beam 9 are arranged on the side wall, and the bottom is provided with an air extraction hole 4 communicated with a vacuum system. The sample transfer mechanism 2 is H-shaped and transversely arranged, the sample feeding door 3 is arranged on the right side wall of the chamber 1 and is aligned with the tail end of the sample transfer mechanism 2; an aperture 8 is provided in a central position on the left side wall of the chamber 1, an ion source is provided towards the centre of the chamber 1, and an ion beam 9 drawn from the ion source passes through the aperture 8 into the chamber 1. A plating plate 7 is also fixed on the front side wall of the chamber 1, a base material 6 and a target 5 are hung and fixed below the sample transfer mechanism 2, and a micro motor for driving the base material 6 and the target 5 to move along the shape of the sample transfer mechanism 2 and rotate according to the requirement is arranged inside the sample transfer mechanism 2. During ion beam cleaning, the substrate 6 is transferred to the center of the sample transfer mechanism 2, the ion beam 9 is emitted to the surface of the substrate 6 by the ion source to perform ion beam cleaning, particles sputtered from the surface of the substrate 6 bombarded by the ion beam 9 are emitted to the plating plate 7, and a plating film is formed on the surface of the plating plate 7 (the plating film is used for collecting the particles sputtered from the surface of the substrate 6, and the bonding strength of the plating film is different according to different ion beam intensity selections); in ion beam sputtering, the substrate 6 is transferred to the front of the plating plate 7, the target 5 is transferred to the center position of the sample transfer mechanism 2, and the angle is adjusted to 60 °, so that the sputtered particle beam 10 formed on the surface of the target 5 is directed to the surface of the substrate 6 to perform plating.
The ion source ionization chamber inside the ion source is communicated with the chamber 1 through the opening 8, and meanwhile, the ion source ionization chamber is communicated with an external gas cylinder through a fine tuning valve. The ion source gas used in the ion source is Kr gas, which, after entering the ion source ionization chamber, interacts with electrons to produce Kr +, which ultimately forms the ion beam 9. The filament current is maintained at 5-10A by adjusting the ion source controller, and the Kr ion beam 9 with the beam energy of 800-1500eV and the beam intensity of 0.1A is obtained by adjusting the ion extraction voltage.
When the vacuum system is used, the chamber 1 is firstly vacuumized to be below 3 multiplied by 10 -4 Pa through the two-stage pump group, and then the small-flow Kr gas is introduced into the ionization chamber of the ion source as the ion source gas, so that the vacuum of the chamber 1 is maintained between 1.5 and 2.2 multiplied by 10 -2 Pa.
The apparatus is also provided with a cooling system which cools the substrate 6 and the target 5 in a water-cooled manner, preventing both from overheating and melting in the event of bombardment by the ion beam 9 and the sputtered particle beam 10. In addition, the device can be externally connected with a Faraday cage and a time-of-flight mass spectrum as required for continuous monitoring.
Taking titanium plate surface ion cleaning and nuclear material ion plating as examples:
1) Before the test, checking the states of all systems, respectively feeding the prepared nuclear target material, the titanium plate of the base material 6 and the plating plate 7 into the cavity through the sample feeding door 3 to form the arrangement shown in figure 1, and respectively starting a vacuum system and a cooling system;
2) Starting a mechanical pump and a molecular pump in sequence, and obtaining vacuum through a vacuum pipeline to ensure that the vacuum degree in the chamber 1 reaches 3 multiplied by 10 -4 Pa;
3) Introducing Kr gas into an ionization chamber of an ion source, starting the ion source when the vacuum degree reaches 2.0X10 -2 Pa, adjusting the current of a filament to 7A, adjusting the energy of the ion beam to 800eV, and adjusting the intensity of the ion beam to 0.1A, so as to form stable ion source beam for ion cleaning;
4) After the ion is cleaned for 1 hour, the filament current of the ion source, the loading bias voltage and the Kr gas fine tuning valve are sequentially closed, and the ion source is continuously cooled for half an hour;
5) Moving the titanium plate to the front of the plating plate 7 through the sample transfer mechanism 2, plating a film on the surface of the titanium plate, and adjusting the angle of the nuclear target to 60 degrees through the transfer mechanism 2, as shown in fig. 2;
6) Introducing ion source gas into an ion source ionization chamber, starting the ion source when the vacuum degree reaches 2.0X10 -2 Pa, adjusting the filament current to 8A, adjusting the ion beam energy to 1500eV and the beam intensity to 0.1A, forming stable ion source beam at the moment for ion sputtering coating, and depositing a sputtering particle beam 10 on the surface of a titanium plate of a substrate 6 to form a coating;
7) After coating for 2 hours, the filament current of the ion source filament, the loading bias voltage and the Kr gas fine tuning valve are sequentially closed, after cooling for 12 hours, the vacuum is released to take out the sample plate, and the sample plate is stored in an inert gas glove box.
The method is as follows: the device obtains vacuum through a mechanical pump and a molecular pump, the chamber 1 is vacuumized to be below 3 multiplied by 10 -4 Pa through the two-stage pump, then small flow Kr gas is introduced into an ionization chamber of an ion source to be used as ion source gas, the vacuum is maintained between 1.5 and 2.2 multiplied by 10 -2 Pa at the moment, the filament current is maintained between 5 and 10A through adjusting an ion source controller, and Kr ion beam 9 with the energy of 800eV and the beam intensity of 0.1A is obtained through adjusting the ion extraction voltage, and the extracted Kr ion beam 9 and target surface materials are subjected to sputtering reaction, so that the target surface pollutants are cleaned; when the ion beam 9 is coated, the Kr ion beam 9 with the beam energy of 1500eV and the beam intensity of 0.1A is obtained by adopting the same method, and the sputtering effect of the ion beam 9 ensures that the sputtering of target particles has higher energy and can be combined with the base material 6 to form a compact film.
The previous description of the embodiments is provided to facilitate a person of ordinary skill in the art in order to make and use the present invention. It will be apparent to those skilled in the art that various modifications can be readily made to these embodiments and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the above-described embodiments, and those skilled in the art, based on the present disclosure, should make improvements and modifications without departing from the scope of the present invention.
Claims (8)
1. The device for cleaning and sputtering coating by using the ion beam is characterized by comprising an ion source, a chamber (1) and a vacuum system;
The chamber (1) comprises a sample transferring mechanism (2) and a sample delivering door (3); the sample transferring mechanism (2) is fixed on the top wall of the chamber (1) and is used for transferring the substrate (6) and the target (5) and rotating the target (5); the sample feeding door (3) is arranged on the side wall of the chamber (1) and is used for feeding the substrate (6) and the target (5) into or taking out of the chamber (1); the side wall of the chamber (1) is also provided with an opening (8) and an air suction hole (4) for passing through the ion beam (9);
The ion source is communicated with the chamber (1) through the opening (8), and an ion beam (9) led out from the ion source is injected into the chamber (1) through the opening (8); the vacuum system is communicated with the cavity (1) through the air suction hole (4);
The chamber (1) further comprises a plating plate (7), and the plating plate (7) is fixed on the side wall of the chamber (1);
When the device is used for ion beam cleaning, the sample transferring mechanism (2) transfers the substrate (6) to the front of the ion beam (9);
When the device is used for ion beam sputtering coating, the sample transfer mechanism (2) transfers the substrate (6) to the side edge in the chamber (1) and the front of the plating plate (7), transfers the target (5) to the front of the ion beam (9), and turns the target (5) to 30-60 degrees to enable the substrate (6) to be positioned in front of a sputtering particle beam (10) formed by sputtering.
2. The apparatus of claim 1, wherein the ion source gas used for the ion source is Kr gas.
3. The apparatus for cleaning and sputter coating by ion beam according to claim 2, wherein the filament current of the ion source is 5-10A, the ion beam energy of the extracted ion beam (9) is 800-1500eV, and the beam intensity is 0.1A.
4. The apparatus of claim 1, wherein the vacuum system is a two-stage pump set of a mechanical pump and a molecular pump.
5. The apparatus according to claim 1 or 4, wherein the apparatus is operated by pumping the pressure in the chamber (1) to 3 x 10 -4 Pa by a vacuum system and then introducing the ion source gas to make the vacuum degree of the chamber (1) 1.5-2.2 x 10 -2 Pa.
6. The apparatus of claim 1, further comprising a cooling system penetrating into the chamber (1) for cooling the substrate (6) and the target (5) during ion beam sputter coating.
7. The apparatus for ion beam cleaning and ion beam sputter coating according to claim 6, the cooling system is characterized in that the cooling system adopts a water cooling mode for cooling.
8. The apparatus for ion beam cleaning and ion beam sputter coating according to claim 1, the device is characterized in that the device is arranged in a glove box.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211074818.9A CN115612980B (en) | 2022-09-02 | 2022-09-02 | Dual-purpose device of ion beam cleaning and ion beam sputter coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211074818.9A CN115612980B (en) | 2022-09-02 | 2022-09-02 | Dual-purpose device of ion beam cleaning and ion beam sputter coating |
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| CN115612980A CN115612980A (en) | 2023-01-17 |
| CN115612980B true CN115612980B (en) | 2024-09-10 |
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| CN202211074818.9A Active CN115612980B (en) | 2022-09-02 | 2022-09-02 | Dual-purpose device of ion beam cleaning and ion beam sputter coating |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09235670A (en) * | 1996-02-29 | 1997-09-09 | Hitachi Ltd | Ion beam sputtering device |
| CN218491836U (en) * | 2022-08-24 | 2023-02-17 | 中核四0四有限公司 | Target table structure for plate surface treatment |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2399400Y (en) * | 1999-12-22 | 2000-10-04 | 中国科学院沈阳科学仪器研制中心 | Ion beam sputtering film coating machine |
| TWI251030B (en) * | 2002-01-11 | 2006-03-11 | Jeng-Jung Li | Method of manufacturing, plated hybrid optic film by using ion beam to sputter dual target materials |
| CN101880863A (en) * | 2009-05-06 | 2010-11-10 | 中国科学院微电子研究所 | Multifunctional ion beam sputtering deposition and etching equipment |
| CN203144505U (en) * | 2013-04-09 | 2013-08-21 | 北京京东方光电科技有限公司 | Cleaning device |
| CN111676450B (en) * | 2020-06-24 | 2021-11-02 | 吉林大学 | Hexagonal boron nitride thick film based on ion beam sputtering deposition and preparation method and application thereof |
| US20220049345A1 (en) * | 2020-08-17 | 2022-02-17 | Kla Corporation | Fluorine-doped optical materials for optical components |
| CN112481595A (en) * | 2020-11-20 | 2021-03-12 | 中国电子科技集团公司第四十八研究所 | Ion beam sputtering coating equipment |
| CN114577506A (en) * | 2020-11-30 | 2022-06-03 | 核工业理化工程研究院 | Sampling device and sampling method for vacuum coating sample |
| CN112899633B (en) * | 2021-01-18 | 2022-07-12 | 中国电子科技集团公司第四十八研究所 | Ion beam coating equipment and coating method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09235670A (en) * | 1996-02-29 | 1997-09-09 | Hitachi Ltd | Ion beam sputtering device |
| CN218491836U (en) * | 2022-08-24 | 2023-02-17 | 中核四0四有限公司 | Target table structure for plate surface treatment |
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| CN115612980A (en) | 2023-01-17 |
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