CN216808951U - Unbalanced magnetron sputtering tantalum plating device - Google Patents
Unbalanced magnetron sputtering tantalum plating device Download PDFInfo
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- CN216808951U CN216808951U CN202123188605.2U CN202123188605U CN216808951U CN 216808951 U CN216808951 U CN 216808951U CN 202123188605 U CN202123188605 U CN 202123188605U CN 216808951 U CN216808951 U CN 216808951U
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Abstract
The utility model provides an unbalanced magnetron sputtering tantalum plating device, which relates to the field of electroplating and comprises a box body, wherein the box body is provided with a cavity for film plating, a cylindrical negative pole wiring board is arranged in the cavity, the negative pole wiring board is connected with a sputtering power supply with a PWM (pulse-width modulation) controller, one side of the negative pole wiring board, which is close to the circle center, is provided with a cylindrical tantalum metal target, a first permanent magnet and a second permanent magnet which are fixed on the negative pole wiring board at intervals are arranged between the negative pole wiring board and the tantalum metal target, and the first permanent magnet and the second permanent magnet are opposite in magnetism; an argon injection port and a vacuum pumping port are also arranged in the cavity; the base station sets up in the cavity, is provided with the support frame that is used for installing the material of treating processing on the base station, and this application adopts the permanent magnet to realize treating the full cover of material of processing, is favorable to treating the deposit on material of processing surface, and the tantalum metal thin film structure that can obtain is fine and close, is applicable to porous or anomalous metal treat that the material of processing combines closely, can realize no dead angle tantalum plating.
Description
Technical Field
The utility model relates to the field of electroplating, in particular to a non-equilibrium magnetron sputtering tantalum plating device.
Background
The implanted interventional medical instrument product needs good biocompatibility and mechanical strength, at present, tantalum metal is a metal material with the best biocompatibility recognized in the medical field, the mechanical strength is high, and the medical instrument prepared from pure tantalum is heavy, so that the medical instrument product with a porous structure becomes an important product structure of the implanted interventional instrument for orthopedics. The Jiemi medical company in America adopts a chemical vapor deposition method to deposit tantalum metal on the surface of a porous support, and the technical monopoly is carried out, but the chemical vapor deposition process is complex, the cost is high, and the environmental pollution can be generated. Aiming at the occurrence of porous medical apparatus products of porous pure titanium metal, titanium alloy and cobalt-chromium alloy through 3D printing in China, the biocompatibility of the titanium alloy and the cobalt-chromium alloy has certain difference compared with that of tantalum metal, the strength is low, and particularly, a bone implantation medical apparatus with a supporting function can be worn to generate metal particles to cause inflammation or even has a carcinogenic effect.
Plating metal on the surface of a product or a workpiece is a common surface modification technology, and the purposes of surface oxidation resistance, decoration and strengthening can be achieved through plating metal. The technology for plating metal on the surface of a product is not only electrochemical deposition, but also physical deposition technology, wherein the electrochemical deposition has the defects of environmental pollution, complex process and the like, the physical deposition technology commonly uses plasma spraying, magnetron sputtering, thermal evaporation technology and the like, the plasma spraying and the thermal evaporation have large energy consumption, and the magnetron sputtering is the physical deposition technology which has low cost, simple process, low sputtering temperature and easy control. However, the existing magnetron sputtering device can only carry out film coating on a plane generally, and for a complex multi-cavity workpiece, the utility model designs a non-equilibrium magnetron sputtering tantalum plating device, which can realize the tantalum plating on the surface of a complex-structure plant intervention medical instrument and improve the biocompatibility and wear resistance of the complex-structure plant intervention medical instrument.
SUMMERY OF THE UTILITY MODEL
The utility model provides an unbalanced magnetron sputtering tantalum plating device, and aims to solve the problem that uniform tantalum plating cannot be performed on porous workpieces and irregular workpieces in the prior art.
In order to achieve the above object, an embodiment of the present invention provides an unbalanced magnetron sputtering tantalum plating apparatus, including:
the device comprises a box body, a cylindrical negative terminal board is arranged in the cavity, the negative terminal board is connected with a sputtering power supply with a PWM (pulse-width modulation) controller, a cylindrical tantalum target is arranged on one side, close to the circle center, of the negative terminal board, a first permanent magnet and a second permanent magnet are arranged between the negative terminal board and the tantalum target, the first permanent magnet and the second permanent magnet are equal in number and the total number is not less than 4, the first permanent magnet and the second permanent magnet are uniformly distributed between the tantalum target and the negative terminal board, and the polarities of the adjacent first permanent magnet and the second permanent magnet are opposite; an argon injection port connected with argon and a vacuum pumping port for pumping vacuum are also arranged in the cavity;
the base station, set up in the cavity, be provided with the support frame that is used for installing the material of treating processing on the base station, the support frame can be in the horizontal rotation of cavity.
Preferably, the longitudinal sections of the negative electrode wiring board and the tantalum metal target are major arcs, and a chord formed by the major arcs of the tantalum metal target extends into a space surrounded by the tantalum metal target.
Preferably, the unbalanced magnetron sputtering tantalum plating device further comprises a barometer, and the barometer detects the pressure in the cavity.
Preferably, a motor is arranged on the base platform, and the output end of the motor is connected with the support frame to drive the support frame to rotate.
Preferably, the motor is connected with a motor power supply.
Preferably, unbalanced magnetron sputtering tantalum plating device still includes the argon gas pump, argon gas pump intercommunication has the argon gas pipe, the argon gas pipe with argon gas filling opening intercommunication, be provided with argon gas valve and argon gas flowmeter on the argon gas pipe, the argon gas flowmeter is compared in the argon gas valve and is more close to the argon gas filling opening.
Preferably, the unbalanced magnetron sputtering tantalum plating device further comprises a vacuum pump, the vacuum pump is communicated with a vacuum tube, the vacuum tube is communicated with the vacuum pumping hole, and a vacuum valve is arranged on the vacuum tube.
Preferably, the box body further comprises a metal box door, the box door is hinged to the box body, an observation window is arranged on the box door, and a locking switch for locking the box door and the box body is arranged on the box door.
The scheme of the utility model has the following beneficial effects:
this application adopts the permanent magnet to realize waiting to process the full coverage of material, and the magnetic field intensity outside is higher than the middle part, is favorable to waiting to process the deposit on material surface for ion concentration and ion density increase in the region that tantalum metal target material encircles, adopt the technical scheme of this application, the tantalum metal film structure that can obtain is compact, is applicable to porous or anomalous metal wait to process the material and combine closely, can realize that no dead angle plates tantalum, and the mechanical strength and the wearability of work piece are treated in the reinforcing.
Drawings
FIG. 1 is a schematic diagram of the working principle of the present invention;
figure 2 is a schematic view of a door.
[ description of reference ]
The device comprises a cavity 1, a cathode wiring board 2, a PWM controller 3, a sputtering power supply 4, a tantalum metal target 5, a first permanent magnet 6, a second permanent magnet 7, a base station 8, a support frame 9, a barometer 10, a motor 11, a motor power supply 12, an argon pump 13, an argon valve 14, an argon flowmeter 15, a vacuum pump 16, a vacuum valve 17, a box door 18, an observation window 19 and a locking switch 20.
Detailed Description
In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1-2, an embodiment of the present invention provides an unbalanced magnetron sputtering tantalum plating device, which includes a box body and a box door 18, wherein the box door 18 and the box body are both made of metal materials, the box door 18 is hinged on the box body, an observation window 19 and a locking switch 20 are disposed on the box door 18, wherein the observation window 19 is used for observing the working state inside the box body, and the locking switch 20 is used for locking the box door 18 and the box body.
Further, a cavity 1 is arranged in the box body, and the cavity 1 is a working area for coating. Specifically, a cylindrical negative electrode wiring board 2 is arranged in the cavity 1, a sputtering power supply 4 is electrically connected to the negative electrode wiring board 2, and a PWM controller 3 is electrically connected between the sputtering power supply 4 and the negative electrode wiring board 2. A tantalum metal target 5 is also arranged in the inner wall direction of the negative electrode wiring board 2, and the tantalum metal target 5 is also cylindrical. The tantalum metal target 5 is preferably coaxially disposed with the negative terminal plate 2. First permanent magnets 6 and second permanent magnets 7 are further arranged between the negative electrode wiring board 2 and the tantalum metal target 5, the number of the first permanent magnets 6 is equal to that of the second permanent magnets 7, the total number of the first permanent magnets 6 is not less than 4, the first permanent magnets 6 and the second permanent magnets 7 are uniformly arranged, and the polarities of the first permanent magnets 6 and the second permanent magnets 7 which are adjacent to each other are opposite. In the present embodiment, each of the first permanent magnet 6 and the second permanent magnet 7 is provided with 3. Preferably, the longitudinal sections of the cathode wiring board 2 and the tantalum metal target 5 are major arcs, a support frame 9 is arranged at a chord formed by the major arcs of the tantalum metal target 5, and the support frame 9 can rotate in a space surrounded by the tantalum metal target 5.
Furthermore, an argon injection port and a vacuum extraction port are arranged on the box body, wherein the argon injection port is communicated with an argon pipe, and the argon pipe is communicated with the argon pump 13. An argon valve 14 and an argon flow meter 15 are provided on the argon gas pipe, wherein the argon flow meter 15 is close to the argon gas injection port relative to the argon valve 14. The vacuum pumping port is communicated with a vacuum tube which is communicated with a vacuum pump 16, and a vacuum valve 17 is arranged on the vacuum tube.
In order to make the supporting frame 9 rotate better, a base station 8 is further arranged in the box body, the base station 8 is arranged in the cavity 1, and the supporting frame 9 is arranged on the base station 8. A motor 11 is further arranged on the base station 8, and the output end of the motor 11 is connected with the support frame 9 so as to drive the support frame 9 to horizontally rotate. The motor 11 is connected with a motor power supply 12. The rotating speed of the motor 11 is adjustable, so that the rotating speed of the support frame 9 is adjustable.
Preferably, in order to better understand the pressure in the cavity 1, the present application further includes a barometer 10, wherein the detection end of the barometer 10 is disposed in the cavity 1, and the display end is disposed outside the box.
The working process of the application is as follows:
the box door 18 is opened, the workpiece to be plated with tantalum is fixed on the support frame 9, the workpiece to be plated with tantalum is connected with a lead and grounded, the box door 18 is closed, and the locking switch 20 is locked. The vacuum pump 16 is turned on and the degree of the barometer 10 is observed, when the vacuum pump 16 pumps the pressure in the chamber 1 to 1 x 10-4When the pressure in the chamber 1 is 0.1-3pa, the vacuum pump 16 and the vacuum valve 17 are closed, the argon pump 13 and the argon valve 14 are opened, and the chamber 1 is filled with argon, and the argon pump 13 and the argon valve 14 are closed.
Further, the motor power supply 12 is turned on, the motor 11 drives the support frame 9 to horizontally rotate at a constant speed in the cavity 1, the sputtering power supply 4 is turned on, the negative pole wiring board 2 is negatively charged at the moment, and the workpiece to be plated with tantalum is grounded, so that potential difference exists between the workpiece to be plated with tantalum and the negative pole wiring board 2, and glow discharge is formed. Argon gas existing in the cavity 1 is ionized into argon ions, and the argon ions in the cavity 1 accelerate spiral motion to collide against the inner surface of the tantalum metal target 5 under the action of the Lorentz force of the electric field and the orthogonal magnetic field. Because the tantalum metal target 5 is cylindrical, tantalum atoms on the tantalum metal target 5 are bombarded and fly to a workpiece to be plated with tantalum from all directions, and the surface of the workpiece is uniformly covered with a tantalum metal film along with the horizontal rotation of the workpiece. The thickness of the tantalum metal film is 100nm-10 um. The thickness of the tantalum metal film can be controlled by voltage and coating time.
When the tantalum plating device is used, not only can the workpieces with uniform surfaces be plated with tantalum, but also the workpieces with irregular shapes and/or multiple holes can be plated with films, the first permanent magnet 6 and the second permanent magnet 7 realize the full coverage of the magnetic induction lines on the workpieces, the magnetic field intensity is higher than the middle part outside, the deposition of a workpiece body is facilitated, the ion concentration and the ion concentration in the area surrounded by the tantalum metal target 5 are increased, the tantalum plating thickness is 100nm-20 mu m, the pore blockage of a porous structure cannot be caused, and the performance of the porous structure is not influenced. The device has simple tantalum plating process, controllable film thickness and low tantalum plating temperature and energy consumption, can realize the tantalum plating of various complex structures or personalized workpieces, and improves the wear resistance and biocompatibility of the implanted medical appliance product.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the utility model as defined in the appended claims.
Claims (8)
1. An unbalanced magnetron sputtering tantalum plating device is characterized by comprising
The device comprises a box body, wherein the box body is provided with a cavity (1) for coating, a cylindrical negative terminal board (2) is arranged in the cavity (1), the negative terminal board (2) is connected with a sputtering power supply (4) with a PWM controller (3), one side, close to the circle center, of the negative terminal board (2) is provided with a cylindrical tantalum metal target (5), a first permanent magnet (6) and a second permanent magnet (7) are arranged between the negative terminal board (2) and the tantalum metal target (5), the first permanent magnet (6) and the second permanent magnet (7) are equal in number and not less than 4 in total number, the first permanent magnet (6) and the second permanent magnet (7) are uniformly distributed between the tantalum metal target (5) and the negative terminal board (2), and the polarities of the adjacent first permanent magnet (6) and the second permanent magnet (7) are opposite; an argon injection port connected with argon and a vacuum pumping port for pumping vacuum are also arranged in the cavity (1);
the base station (8) is arranged in the cavity (1), a support frame (9) used for installing materials to be processed is arranged on the base station (8), and the support frame (9) can horizontally rotate in the cavity (1).
2. The unbalanced magnetron sputtering tantalum plating device according to claim 1, wherein: the longitudinal sections of the negative electrode wiring board (2) and the tantalum metal target (5) are major arcs, and a chord part formed by the major arcs of the tantalum metal target (5) of the support frame (9) extends into a space surrounded by the tantalum metal target (5).
3. The unbalanced magnetron sputtering tantalum plating apparatus according to claim 2, wherein: the unbalanced magnetron sputtering tantalum plating device further comprises a barometer (10), wherein the barometer (10) is used for detecting the pressure in the cavity (1).
4. The unbalanced magnetron sputtering tantalum plating apparatus according to claim 3, wherein: the base station (8) is provided with a motor (11), the output end of the motor (11) is connected with the support frame (9) to drive the support frame (9) to rotate, the rotation is uniform speed rotation along the direction parallel to the horizontal plane, and the speed is adjustable.
5. The unbalanced magnetron sputtering tantalum plating device according to claim 4, wherein: the motor (11) is connected with a motor power supply (12).
6. The unbalanced magnetron sputtering tantalum plating apparatus according to claim 4 or 5, wherein: unbalanced magnetron sputtering tantalum plating device still includes argon gas pump (13), argon gas pump (13) intercommunication has the argon gas pipe, the argon gas pipe with argon gas filling opening intercommunication, be provided with argon gas valve (14) and argon gas flowmeter (15) on the argon gas pipe, argon gas flowmeter (15) are compared in argon gas valve (14) and are more close to the argon gas filling opening.
7. The unbalanced magnetron sputtering tantalum plating device according to claim 6, wherein: the unbalanced magnetron sputtering tantalum plating device further comprises a vacuum pump (16), the vacuum pump (16) is communicated with a vacuum tube, the vacuum tube is communicated with the vacuum pumping hole, and a vacuum valve (17) is arranged on the vacuum tube.
8. The unbalanced magnetron sputtering tantalum plating device according to claim 1, wherein: the box body further comprises a metal box door (18), the box door (18) is hinged to the box body, an observation window (19) is arranged on the box door (18), and a locking switch (20) for locking the box door (18) and the box body is arranged on the box door (18).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123188605.2U CN216808951U (en) | 2021-12-17 | 2021-12-17 | Unbalanced magnetron sputtering tantalum plating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123188605.2U CN216808951U (en) | 2021-12-17 | 2021-12-17 | Unbalanced magnetron sputtering tantalum plating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216808951U true CN216808951U (en) | 2022-06-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202123188605.2U Active CN216808951U (en) | 2021-12-17 | 2021-12-17 | Unbalanced magnetron sputtering tantalum plating device |
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| Country | Link |
|---|---|
| CN (1) | CN216808951U (en) |
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2021
- 2021-12-17 CN CN202123188605.2U patent/CN216808951U/en active Active
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230118 Address after: 410600 room 205, building 1, Hunan University Science and Technology Industrial Park, No. 001, Jinzhou North Road, Ningxiang high tech Industrial Park, Changsha City, Hunan Province Patentee after: Hunan Huaxiang Medical Technology Co.,Ltd. Address before: 410600 Room 1012, Building 1, Science and Technology Industrial Park, Hunan University, 001 Jinzhou North Road, Ningxiang County, Changsha City, Hunan Province Patentee before: Hunan Printer Medical Devices Co.,Ltd. |