CN112575299A - Magnetron sputtering system suitable for infrared passivation film layer - Google Patents
Magnetron sputtering system suitable for infrared passivation film layer Download PDFInfo
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- CN112575299A CN112575299A CN201910923769.3A CN201910923769A CN112575299A CN 112575299 A CN112575299 A CN 112575299A CN 201910923769 A CN201910923769 A CN 201910923769A CN 112575299 A CN112575299 A CN 112575299A
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 73
- 238000002161 passivation Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 111
- 238000004140 cleaning Methods 0.000 claims abstract description 59
- 238000001035 drying Methods 0.000 claims abstract description 29
- 238000011068 loading method Methods 0.000 claims abstract description 28
- 239000000110 cooling liquid Substances 0.000 claims abstract description 26
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 abstract description 19
- 230000008569 process Effects 0.000 abstract description 18
- 239000011159 matrix material Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 28
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910004613 CdTe Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- Chemical Kinetics & Catalysis (AREA)
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- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a magnetron sputtering system suitable for an infrared passivation film layer, which comprises a magnetron sputtering cavity, a loading and unloading piece cavity, a cleaning and drying cavity and a transmission cavity, wherein vacuum generating devices are respectively arranged in the magnetron sputtering cavity, the loading and unloading piece cavity, the cleaning and drying cavity and the transmission cavity, the magnetron sputtering cavity, the loading and unloading piece cavity and the cleaning and drying cavity are respectively butted with the transmission cavity through a transmission valve, a vacuum manipulator is arranged in the transmission cavity, a substrate table is arranged in the magnetron sputtering cavity, a cleaning table is arranged in the cleaning and drying cavity, and a cooling liquid flow channel is arranged in each of the substrate table and the cleaning table and is provided with a cooling liquid inflow connector and a cooling liquid outflow connector. The invention has the advantages of simple structure, good adhesion between the film and the substrate, and capability of meeting the low-temperature process requirements of the tellurium-cadmium-mercury matrix material of the infrared device.
Description
Technical Field
The invention relates to magnetron sputtering coating equipment, in particular to a magnetron sputtering system suitable for an infrared passivation film layer.
Background
The magnetron sputtering coating technology is one of important coating technologies and is widely applied to the fields of microelectronics, optical films and material surface treatment. The HgCdTe infrared detector is the first choice of the infrared detector technology, but the HgCdTe material has the following inherent characteristics: (1) hg atoms cannot be collided by ions with higher energy, and even if the energy is low at about 1keV, the Hg atoms are sputtered out, so that the chemical composition of the first atomic layer is obviously changed, and an electroactive defect is formed; (2) the mercury cadmium telluride cannot be heated too much, and Hg atoms in the mercury cadmium telluride can escape when the temperature reaches about 80 ℃.
In order to overcome the low-energy and low-temperature characteristics of the infrared device substrate material, special requirements are put forward on the surface passivation process of the device. At present, the preparation of the ZnS/CdTe composite passive film adopts a thermal evaporation technology at the earliest, but the compactness of the film is not ideal, particularly the adhesion of the thermal evaporation ZnS and a mercury cadmium telluride substrate is not good, and the film is difficult to grow thick. The ion beam sputtering deposition is adopted to easily cause component segregation to the growth of a multi-component (compound) material, so that element deposition is caused, and the performance and the application of the film are influenced. In contrast, the magnetron sputtering deposition technology is adopted to realize the low-temperature low-energy growth of the ZnS and CdTe thin film on the surface of the HgCdTe thin film, and the component uniformity is good.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a magnetron sputtering system which has a simple structure and good adhesion between a film and a substrate and can meet the low-temperature process requirement of an infrared device mercury cadmium telluride base material and is suitable for an infrared passivation film layer.
In order to solve the technical problems, the invention adopts the following technical scheme:
the magnetron sputtering system comprises a magnetron sputtering cavity, a loading and unloading piece cavity, a cleaning and drying cavity and a conveying cavity, wherein vacuum generating devices are respectively arranged in the magnetron sputtering cavity, the loading and unloading piece cavity, the cleaning and drying cavity and the conveying cavity, the magnetron sputtering cavity, the loading and unloading piece cavity and the cleaning and drying cavity are respectively in butt joint with the conveying cavity through a transmission valve, a vacuum manipulator is arranged in the conveying cavity, a substrate table is arranged in the magnetron sputtering cavity, a cleaning table is arranged in the cleaning and drying cavity, and cooling liquid flow channels are arranged in the substrate table and the cleaning table and are provided with a cooling liquid inflow joint and a cooling liquid outflow joint.
As a further improvement of the above technical solution: the magnetron sputtering device comprises at least two magnetron sputtering cavities, wherein the conveying cavity is of a polygonal structure, and the loading and unloading cavity, the cleaning and drying cavity and each magnetron sputtering cavity are arranged around the conveying cavity.
As a further improvement of the above technical solution: the magnetron sputtering device comprises a magnetron sputtering cavity, a substrate table and a rotary baffle plate, wherein a sputtering cathode target and the rotary baffle plate for shielding or opening the substrate table are arranged in the magnetron sputtering cavity, the substrate table and the rotary baffle plate are positioned at the upper part of the magnetron sputtering cavity, and the sputtering cathode target is positioned at the lower part of the magnetron sputtering cavity.
As a further improvement of the above technical solution: the axis of the substrate table is parallel to the axis of the sputtering cathode target and is eccentrically arranged, and the eccentric distance and the vertical distance between the sputtering cathode target and the substrate table are both adjustable.
As a further improvement of the above technical solution: the cleaning platform is a rotary cleaning platform.
As a further improvement of the above technical solution: the loading and unloading cavity is internally provided with a lifting substrate frame, and the lifting substrate frame is provided with a plurality of layers of substrate supports.
As a further improvement of the above technical solution: the substrate sheet support is of a circular structure, and a plurality of fastening holes are formed in the surface of the substrate sheet support.
As a further improvement of the above technical solution: and a photoelectric sensor for detecting whether a substrate is arranged on the vacuum manipulator or not is arranged in the conveying cavity.
Compared with the prior art, the invention has the advantages that: the invention discloses a magnetron sputtering system suitable for an infrared passivation film layer, which can realize the low-temperature and low-energy growth of ZnS and CdTe films on the surfaces of the HgCdTe films by adopting a magnetron sputtering deposition mode, has good component uniformity, is provided with a single cleaning and drying cavity, can clean and dry a substrate, remove dirt and oxides on the surface of the substrate, greatly improve the adhesive force of the films and the substrate, is provided with a vacuum generating device in each cavity, realizes partition or communication through a transmission valve, is not exposed in the atmospheric environment in the cleaning and drying cavity, the transmission cavity and the magnetron sputtering cavity, can continuously deposit the films in the vacuum environment, greatly reduces the fundamental problem of poor film quality caused by the pollution of the cavities and the substrate, is provided with a cooling liquid flow channel in each substrate table and each cleaning table, and is provided with a cooling liquid inflow joint and a cooling liquid outflow joint, the cooling liquid is controlled to be at a target temperature through heating or refrigeration, then enters the cooling liquid flow channel through the cooling liquid inflow joint, exchanges heat, and then flows out through the cooling liquid outflow joint, so that the cleaning table and the substrate table have a substrate low-temperature control function, and the low-temperature process requirements of the tellurium-cadmium-mercury matrix material of the infrared device can be met.
Drawings
FIG. 1 is a schematic top view of a magnetron sputtering system suitable for an infrared passivation film layer according to the present invention.
FIG. 2 is a schematic structural diagram of a magnetron sputtering chamber and a loading/unloading plate chamber in the present invention.
The reference numerals in the figures denote: 1. a magnetron sputtering cavity; 11. a substrate stage; 12. a coolant flow passage; 13. a coolant inflow fitting; 14. a coolant outflow joint; 15. sputtering a cathode target; 16. rotating the baffle; 2. loading and unloading the piece cavity; 21. lifting the substrate holder; 22. a substrate sheet holder; 3. cleaning the drying cavity; 4. a transfer chamber; 41. a vacuum manipulator; 6. a transfer valve.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples of the specification.
Fig. 1 to 2 show an embodiment of the present invention, a magnetron sputtering system suitable for an infrared passivation film layer in this embodiment includes a magnetron sputtering chamber 1, a loading and unloading piece chamber 2, a cleaning and drying chamber 3, and a transfer chamber 4, the magnetron sputtering chamber 1, the loading and unloading piece chamber 2, the cleaning and drying chamber 3, and the transfer chamber 4 are all configured with vacuum generating devices, the magnetron sputtering chamber 1, the loading and unloading piece chamber 2, and the cleaning and drying chamber 3 are respectively butted with the transfer chamber 4 through a transfer valve 6, a vacuum manipulator 41 is arranged in the transfer chamber 4, a substrate table 11 is arranged in the magnetron sputtering chamber 1, a cleaning table (not shown in the figure) is arranged in the cleaning and drying chamber 3, and a cooling liquid flow channel 12 is arranged in each of the substrate table 11 and the cleaning table and is configured with a cooling liquid inflow joint 13 and a cooling liquid outflow joint.
The magnetron sputtering system suitable for the infrared passivation film layer can realize the low-temperature low-energy growth of ZnS and CdTe thin films on the surfaces of the HgCdTe thin films by adopting a magnetron sputtering deposition mode, has good component uniformity, is provided with the independent cleaning and drying cavity 3 which can clean and dry the substrate and remove dirt and oxides on the surface of the substrate, greatly improves the adhesive force of the thin films and the substrate, each cavity is provided with a vacuum generating device and is separated or communicated by the transmission valve 6, the cleaning and drying cavity 3, the transmission cavity 4 and the magnetron sputtering cavity 1 can not be exposed in the atmospheric environment, the cleaning process and the multilayer thin films can be continuously deposited in the vacuum environment, the fundamental problem of poor quality of the thin films caused by the pollution of the cavities and the substrate is greatly reduced, the substrate table 11 and the cleaning table are both provided with the cooling liquid flow channel 12 and are provided with the cooling liquid inflow joint 13 and the cooling liquid outflow joint 14, cooling liquid (such as silicon oil) is controlled to be at a target temperature through heating or refrigeration, then enters the cooling liquid flow channel 12 through the cooling liquid inflow joint 13, exchanges heat, and then flows out through the cooling liquid outflow joint 14, so that the cleaning table and the substrate table 11 have a substrate low-temperature control function, the requirements of infrared device mercury cadmium telluride base material low-temperature process can be met, and the infrared device process temperature is generally-20-100 ℃.
Preferably, in this embodiment, two magnetron sputtering cavities 1 are provided, and certainly, in other embodiments, the number of magnetron sputtering cavities 1 can be further increased, targets can be freely configured in each magnetron sputtering cavity 1 according to the requirement of the process material of the passivation film layer of the infrared device, so that sputtering deposition of each film layer is performed in a separate process cavity, cross contamination among different processes is thoroughly avoided, the conveying cavity 4 is of a polygonal structure, and the loading and unloading piece cavity 2, the cleaning and drying cavity 3 and each magnetron sputtering cavity 1 are arranged around the conveying cavity 4.
Further, in this embodiment, a sputtering cathode target 15 and a rotating baffle 16 for shielding or opening the substrate stage 11 are disposed in the magnetron sputtering chamber 1, the substrate stage 11 and the rotating baffle 16 are disposed at the upper portion of the magnetron sputtering chamber 1, and the sputtering cathode target 15 is disposed at the lower portion of the magnetron sputtering chamber 1. When the rotating shutter 16 rotates to block the substrate stage 11 below the substrate stage 11, the rotating shutter 16 is concentric with the substrate stage 11 to prevent deposition of film material on the substrate when the sputtering cathode target 15 is pre-sputtered.
Furthermore, in the present embodiment, the axis of the substrate stage 11 is parallel to the axis of the sputtering cathode target 15 and is eccentrically disposed, and the eccentricity and the vertical distance between the sputtering cathode target 15 and the substrate stage 11 are both adjustable. The eccentricity and the vertical distance between the sputtering cathode target 15 and the substrate table 11 are both adjustable, and the method can be used for optimizing and adjusting the uniformity of the magnetron sputtering process and solving the problem of poor uniformity.
Preferably, in this embodiment, the wash station is a rotary wash station. The substrate is rotated in the cleaning process, which is beneficial to improving the cleaning uniformity. A set of radio frequency cleaning table can be arranged at the upper part in the cleaning and drying cavity 3, the radio frequency power can be loaded on the cleaning table, the cleaning power is preferably 50 w-500 w, the plasma cleaning of the substrate is realized, the dirt and the oxide on the surface of the substrate are removed, and the adhesive force of the film and the substrate is greatly improved.
Furthermore, in the present embodiment, a lifting substrate holder 21 is disposed in the loading/unloading wafer chamber 2, and a multi-layer substrate holder 22 is disposed on the lifting substrate holder 21. Each layer of substrate holders 22 can hold a substrate and can hold a plurality of substrates. The substrate support 22 is preferably a circular structure with a plurality of fastening holes (e.g., threaded mounting holes) in the surface for mounting substrates, compatible with circular, square and shaped substrates, and capable of mounting circular substrates with a maximum diameter of 200 mm. Before magnetron sputtering coating, an operator firstly places a substrate on a substrate support 22, and then places a lifting substrate frame 21 on a lifting table of a loading and unloading piece cavity 2. Each substrate support is taken out to each magnetron sputtering cavity 1 for sputtering process, and then returns to the corresponding layer position after being finished, so that a plurality of substrates can be continuously processed without opening a cavity door, and the substrates are taken out together after being completely plated, thereby saving the film plating time. As the preferred technical scheme, only 1 lifting substrate frame 21 is arranged in the loading and unloading piece cavity 2, the substrate returns to the substrate support 22 layers before sputtering after sputtering is finished (namely the number of layers before and after sputtering is kept unchanged), compared with the mode that one substrate frame enters and the other substrate frame exits, the volume of the loading and unloading piece cavity 2 can be saved, the vacuum time is shortened, the vacuum can be conveniently and quickly established, and the productivity is improved
Further, in this embodiment, a photoelectric sensor (not shown) for detecting whether there is a substrate on the vacuum robot 41 is disposed in the transfer chamber 4. The vacuum manipulator 41 can realize the substrate transfer among the lifting substrate frame 21, the cleaning and drying cavity 3 and the magnetron sputtering cavities 1 in the loading and unloading piece cavity 2, the photoelectric sensor is used for detecting whether the substrate exists on the vacuum manipulator 41, and the vacuum manipulator 21 needs to perform substrate inspection before the loading and unloading piece cavity 2 or the magnetron sputtering cavity 1 takes and puts pieces, so that the collision of taking and putting pieces is prevented.
The coating method based on the magnetron sputtering system suitable for the infrared passivation film layer comprises the following steps: the preparation method comprises the steps of preparing a process, loading the substrate into a loading and unloading cavity 2, obtaining the loading and unloading cavity 2 in vacuum, transferring the substrate to be coated to a cleaning and drying cavity 3, obtaining the cleaning and drying cavity 3 in vacuum, controlling the temperature of the substrate, cleaning the substrate by radio frequency plasma, transferring the substrate to a substrate table 11 of a first magnetron sputtering cavity 1, obtaining the cleaning and drying cavity 3 in vacuum, controlling the temperature of the substrate, pre-sputtering, sputtering a passivation film layer, completing the preparation of a first layer of film material, transferring the substrate to the substrate table 11 of a second magnetron sputtering cavity 1, sequentially completing the preparation of a second layer … … N layer (N is more than or equal to 2) of film material, and completing the process.
The preparation method comprises the steps of cleaning the substrate by alcohol, cleaning the substrate by acetone, cleaning the substrate by ultrasonic waves, pre-baking the substrate and the like.
In the pre-sputtering and sputtering processes, the substrate table 11 drives the substrate to rotate, and the rotation speed is preferably 0-60 rpm.
Controlling the temperature of the substrate, preferably controlling the temperature of the substrate by heating or refrigerating the silicone oil to a target temperature and then introducing the silicone oil into a cleaning table or a substrate table 11 to realize the temperature control of the substrate, wherein the process temperature of the infrared device is generally-20-100 ℃.
The RF plasma cleaning is to eliminate the dirt and oxide on the surface of the substrate under the condition of controlling the temperature of the substrate at-20 deg.C to 100 deg.C, and the cleaning power is generally 50w to 500 w.
During the process of pre-sputtering and sputtering the passivation film layer, the film is sputtered and coated under the condition that the temperature of the substrate is controlled to be-20-100 ℃, and the sputtering power is generally 100-1000 w.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (8)
1. A magnetron sputtering system suitable for infrared passivation film layer which characterized in that: the device comprises a magnetron sputtering cavity (1), a loading and unloading piece cavity (2), a cleaning and drying cavity (3) and a conveying cavity (4), wherein the magnetron sputtering cavity (1), the loading and unloading piece cavity (2), the cleaning and drying cavity (3) and the conveying cavity (4) are all provided with vacuum generating devices, the magnetron sputtering cavity (1), the loading and unloading piece cavity (2) and the cleaning and drying cavity (3) are respectively butted with the conveying cavity (4) through a transmission valve (6), a vacuum mechanical arm (41) is arranged in the conveying cavity (4), a substrate table (11) is arranged in the magnetron sputtering cavity (1), a cleaning table is arranged in the cleaning and drying cavity (3), and cooling liquid runners (12) are arranged in the substrate table (11) and the cleaning table and are provided with a cooling liquid inflow connector (13) and a cooling liquid outflow connector (14).
2. The magnetron sputtering system suitable for the infrared passivation film layer as claimed in claim 1, wherein: the magnetron sputtering device is characterized in that at least two magnetron sputtering cavities (1) are arranged, the conveying cavity (4) is of a polygonal structure, and the loading and unloading piece cavity (2), the cleaning and drying cavity (3) and each magnetron sputtering cavity (1) are arranged around the conveying cavity (4).
3. The magnetron sputtering system suitable for the infrared passivation film layer as claimed in claim 1 or 2, wherein: the magnetron sputtering device is characterized in that a sputtering cathode target (15) and a rotating baffle (16) used for shielding or opening the substrate table (11) are arranged in the magnetron sputtering cavity (1), the substrate table (11) and the rotating baffle (16) are positioned at the upper part of the magnetron sputtering cavity (1), and the sputtering cathode target (15) is positioned at the lower part of the magnetron sputtering cavity (1).
4. The magnetron sputtering system suitable for the infrared passivation film layer as claimed in claim 3, wherein: the axis of the substrate platform (11) is parallel to the axis of the sputtering cathode target (15) and is eccentrically arranged, and the eccentric distance and the vertical distance between the sputtering cathode target (15) and the substrate platform (11) are both adjustable.
5. The magnetron sputtering system suitable for the infrared passivation film layer as claimed in claim 1 or 2, wherein: the cleaning platform is a rotary cleaning platform.
6. The magnetron sputtering system suitable for the infrared passivation film layer as claimed in claim 1 or 2, wherein: a lifting substrate frame (21) is arranged in the loading and unloading piece cavity (2), and a multi-layer substrate piece support (22) is arranged on the lifting substrate frame (21).
7. The magnetron sputtering system suitable for the infrared passivation film layer as claimed in claim 6, wherein: the substrate sheet support (22) is of a circular structure, and a plurality of fastening holes are formed in the surface of the substrate sheet support.
8. The magnetron sputtering system suitable for the infrared passivation film layer as claimed in claim 1 or 2, wherein: and a photoelectric sensor for detecting whether a substrate exists on the vacuum manipulator (41) is arranged in the conveying cavity (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910923769.3A CN112575299A (en) | 2019-09-27 | 2019-09-27 | Magnetron sputtering system suitable for infrared passivation film layer |
Applications Claiming Priority (1)
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Application publication date: 20210330 |