CN112159967B - Ion beam deposition equipment for infrared metal film and film deposition method - Google Patents

Ion beam deposition equipment for infrared metal film and film deposition method Download PDF

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CN112159967B
CN112159967B CN202011064841.0A CN202011064841A CN112159967B CN 112159967 B CN112159967 B CN 112159967B CN 202011064841 A CN202011064841 A CN 202011064841A CN 112159967 B CN112159967 B CN 112159967B
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target
substrate
chamber
film
sputtering
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CN112159967A (en
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罗超
胡凡
范江华
程文进
陈特超
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CETC 48 Research Institute
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses ion beam deposition equipment for an infrared metal film and a film deposition method. The thin film deposition method adopts the equipment to deposit the thin film. According to the invention, the arranged loading and unloading piece chamber can reduce the cavity opening and the vacuumizing times of the sputtering chamber, shorten the vacuumizing time, improve the productivity, keep the vacuum environment in the sputtering chamber all the time, reduce the target burning times and improve the utilization rate of the target material. The ion beam deposition equipment has the advantages of high productivity, high utilization rate of the target material and the like, can be widely used for depositing the infrared metal film, and has high use value and application prospect.

Description

Ion beam deposition equipment for infrared metal film and film deposition method
Technical Field
The invention relates to ion beam deposition equipment for an infrared metal film and a film deposition method.
Background
The ion beam film deposition technology is one of the most important technologies in various coating technologies, and is widely applied to the fields of sensors, microelectronics, optical films and material surface treatment. The infrared focal plane detector is a key device of a modern infrared thermal imaging system and comprises an infrared detector array and a reading circuit. With the wider detection range and higher detection precision of the infrared focal plane detector, the requirements on the detector core component array and the reading circuit are higher and higher. At present, a metal film (namely an infrared metal film) of an infrared detection device chip is mainly prepared by a magnetron sputtering and evaporation coating method, and a small part of the metal film is prepared by an ion beam deposition method. However, the ion beam sputtering apparatuses used when the ion beam deposition method is used to produce the infrared metal film are small-sized substrates and manual research type apparatuses, and have the following problems: (1) The device does not have the function of independently assembling and disassembling the film chamber, and the chamber door of the film deposition chamber (sputtering chamber) needs to be opened after sputtering is finished every time, so that the problems of long vacuum establishing time, short effective working time and the like exist; meanwhile, the target material is often exposed in the atmospheric environment in the loading and unloading process, so that the target material is easy to oxidize, the target material needs to be burnt to remove an oxide layer before each use, the target material is wasted, and the utilization rate is low; (2) The feeding and discharging are inconvenient, the substrate has a single shape, and the substrate is difficult to be compatible with various special-shaped sheets with different specifications; (3) The size of the workpiece table is small, so that the workpiece table can only bear a substrate with a small size, and a large-area film is difficult to prepare; (4) The uniformity correction system is not provided, and the uniformity of film deposition is poor; (5) The target material antifouling system is not available, so that cross contamination is caused in the film deposition process; (6) The deposition temperature of the conventional ion beam deposition equipment is increased along with the increase of sputtering energy and time, is difficult to control, is easy to damage an infrared substrate, and cannot be applied to the preparation of an infrared material metal film. The above disadvantages make it difficult for the existing ion beam deposition equipment to meet the production requirements of large size, high uniformity and high productivity on a large production line.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide ion beam deposition equipment and a film deposition method for an infrared metal film, which have high productivity and high target utilization rate.
In order to solve the technical problem, the invention adopts the following technical scheme:
the ion beam deposition equipment for the infrared metal film comprises a loading and unloading piece chamber and a sputtering chamber, wherein a first high-vacuum isolation valve is arranged between the loading and unloading piece chamber and the sputtering chamber; the loading and unloading piece cavity is provided with a vacuum sealing door, a pushing rod penetrates through the vacuum sealing door, and one end, on the inner side of the vacuum sealing door, of the pushing rod is provided with a workpiece table; a pushing mechanism for pushing the pushing rod is arranged on the outer side of the vacuum sealing door; the loading and unloading piece chamber is connected with a first vacuumizing device.
As a further improvement of the above technical solution: the propelling mechanism comprises a propelling motor, a rotating shaft of the propelling motor is connected with a screw rod, the screw rod is provided with a sliding block, and the sliding block is connected with a propelling rod; a temperature control mechanism is arranged outside the workpiece table; the temperature control mechanism comprises a cooling pipe and cooling liquid circulating in the cooling pipe; the cooling liquid is silicone oil; the workpiece table is in a circular plate shape; the workpiece table is provided with a fixing hole for mounting a substrate.
As a further improvement of the above technical solution: a rotating mechanism for rotating the pushing rod is further arranged on the outer side of the vacuum sealing door; the rotating mechanism comprises a rotating motor arranged on the sliding block, and a rotating shaft of the rotating motor is connected with the pushing rod; and a corrugated pipe for sealing the push rod is arranged between the rotating motor and the vacuum sealing door.
As a further improvement of the technical scheme: the ion beam deposition equipment also comprises a turnover mechanism used for turning over the vacuum sealing door; the turnover mechanism comprises a turnover cylinder, a turnover rod is connected to a rotation shaft of the turnover cylinder, and the turnover rod is connected with the outer side of the vacuum sealing door.
As a further improvement of the above technical solution: a rotatable four-surface target table and a target material antifouling plate for shielding the target surface of the rotatable four-surface target table are arranged in the sputtering chamber; the rotatable four-side target table is connected with a fixed point swing mechanism for regulating and controlling the ion emergent angle of the target material; the target antifouling plate is connected with a cylinder driving connecting rod mechanism.
As a further improvement of the above technical solution: a correction plate for correcting the uniformity of the film is arranged in the sputtering chamber and is positioned between the workpiece table and the rotatable four-side target table; the correction plate is connected with a cylinder driving connecting rod mechanism; and a substrate anti-fouling plate is arranged between the rotary four-surface target table and the correction plate.
As a further improvement of the above technical solution: the top of the sputtering chamber is provided with a cleaning ion source for cleaning a substrate on the workpiece table, and the cleaning ion source is connected with a first mass flow controller through a first gas path pipeline; the bottom of the sputtering chamber is provided with a sputtering ion source for bombarding the target material on the rotatable four-side target table, and the sputtering ion source is connected with a second mass flow controller through a second gas path pipeline; the sputtering chamber is connected with a second vacuumizing device.
As a further improvement of the technical scheme: the ion beam deposition equipment is electrically connected with an electrical control system and a monitoring software system.
As a general technical concept, the present invention also provides a thin film deposition method for depositing a thin film on a surface of a substrate using the above ion beam deposition apparatus for an infrared metal film, comprising the steps of:
s1, feeding: opening a vacuum sealing door of the loading and unloading piece chamber, and installing the substrate on the workpiece table;
s2, vacuumizing: closing a vacuum sealing door of the loading and unloading piece chamber, and opening a first vacuumizing device to vacuumize the loading and unloading piece chamber until the loading and unloading piece chamber is equal in pressure with the sputtering chamber;
s3, propulsion: and opening the first high vacuum isolation valve, and pushing the workpiece platform into the sputtering chamber by using the pushing mechanism to deposit a film on the surface of the substrate.
As a further improvement of the above technical solution, in step S3, when depositing a thin film on the surface of the substrate, the method further comprises the following steps:
s4, temperature control: after the workpiece platform is pushed into a sputtering chamber, a temperature control mechanism is started to regulate and control the temperature of cooling liquid in the workpiece platform, so that the temperature of the workpiece platform is maintained at-40 ℃ to 200 ℃;
s5, voltage stabilization: adjusting the second mass flow controller and the third high vacuum isolation valve to enable the pressure of the sputtering chamber to be 0.1-1 Pa;
s6, cleaning: opening a cleaning ion source, leading out plasma to bombard a substrate on a workpiece table, and removing pollutants on the surface of the substrate;
s7, target burning: opening a sputtering ion source, leading out plasma to bombard the target material on the target surface of the rotatable four-surface target table, and removing oxides on the surface of the target material;
s8, depositing a film: opening a sputtering ion source, leading out plasma to bombard the target material on the target surface of the rotatable four-surface target table, and depositing ions sputtered from the surface of the target material on the surface of a substrate to obtain the substrate with a film deposited on the surface;
s9, after the film deposition is finished, the workpiece platform is retreated into the loading and unloading sheet chamber by utilizing the reverse rotation of the propelling mechanism, the first high-vacuum isolation valve is closed, and the gas is filled until the pressure is equal to the external pressure;
s10, opening a vacuum sealing door of the loading and unloading piece chamber, and taking out the substrate with the film deposited on the surface.
Compared with the prior art, the invention has the advantages that:
(1) The invention provides ion beam deposition equipment for an infrared metal film, which comprises a loading and unloading piece chamber and a sputtering chamber, wherein a first high-vacuum isolation valve is arranged between the loading and unloading piece chamber and the sputtering chamber, the loading and unloading piece chamber is provided with a vacuum sealing door, a pushing rod penetrates through the vacuum sealing door, a workpiece table is arranged at one end of the pushing rod, which is positioned on the inner side of the vacuum sealing door, a pushing mechanism for pushing the pushing rod is arranged on the outer side of the vacuum sealing door, and the loading and unloading piece chamber is connected with a first vacuumizing device. In the invention, a loading and unloading piece chamber is arranged on one side of a cavity door of a sputtering chamber, in the loading process, a first high-vacuum isolation valve is closed firstly, the vacuum environment of the sputtering chamber is kept unchanged, then a vacuum sealing door is opened, a substrate is installed on a workpiece table, then the vacuum sealing door is closed, a vacuumizing device is used for vacuumizing the loading and unloading piece chamber, so that the loading and unloading piece chamber can quickly establish the same vacuum environment as the sputtering chamber, finally the first high-vacuum isolation valve is opened, and the substrate on the workpiece table is pushed into the sputtering chamber by a pushing mechanism for film deposition. According to the invention, by arranging the loading and unloading piece chamber, the times of cavity opening and vacuumizing of the sputtering chamber can be reduced, the vacuumizing time can be shortened, and the productivity can be improved; meanwhile, the vacuum environment is always kept in the sputtering cavity by arranging the loading and unloading piece cavity, so that the problem that the target is oxidized due to exposure in the atmosphere can be avoided, the target burning times can be reduced, and the utilization rate of the target can be improved. The ion beam deposition equipment has the advantages of high productivity, high utilization rate of the target material and the like, can be widely used for depositing the infrared metal film, and has high use value and application prospect.
(2) The ion beam deposition equipment comprises a propelling mechanism, wherein the propelling mechanism comprises a propelling motor, a rotating shaft of the propelling motor is connected with a screw rod, the screw rod is provided with a sliding block, and the sliding block is connected with a propelling rod. According to the invention, the screw rod is driven to rotate by driving the propelling motor, so that the slide block slides on the screw rod to drive the propelling rod to move back and forth, and further the workpiece table is driven to move back and forth, the distance between the workpiece table and the center of a target material in a sputtering chamber can be adjusted, the adhesion of a film on the surface of a substrate can be improved, and the film with higher deposition adhesion can be prepared.
(3) In the ion beam deposition equipment, the outer side of the vacuum sealing door is also provided with a rotating mechanism for rotating the pushing rod, wherein the rotating mechanism comprises a rotating motor arranged on the sliding block, and a rotating shaft of the rotating motor is connected with the pushing rod. According to the invention, the rotating motor is driven to drive the push rod to rotate, so that the workpiece table is driven to rotate, the rotation rate of the workpiece table can be adjusted, the deposition uniformity of the film on the surface of the substrate can be improved, and the film with better deposition uniformity can be prepared. In addition, the rotary motor is provided on the slider of the propulsion mechanism, whereby the propulsion mechanism and the rotary mechanism can be linked.
(4) In the ion beam deposition equipment, a temperature control mechanism is arranged in a workpiece table and comprises a cooling pipe and cooling liquid circulating in the cooling pipe, wherein the cooling liquid is silicon oil. In the invention, the cooling liquid with controllable temperature circulates in the workpiece table to regulate and control the temperature of the workpiece table, so that the temperature of the infrared substrate in the process can be controlled, the infrared substrate is prevented from being damaged in the process of temperature rise, and when the silicon oil is used as the cooling liquid for controlling the temperature, the temperature control range can reach-20-200 ℃, and the requirement of low-temperature deposition of the infrared substrate is met. In addition, the workpiece table is in a circular plate shape, the surface of the workpiece table is provided with a fixing hole for mounting the substrate, the workpiece table can be compatible with substrates with different rules of circle, square or special shape and the like, and the workpiece table can be applied to circular substrates with the maximum size of 200 mm.
(5) The ion beam deposition equipment also comprises a turnover mechanism for turning over the vacuum sealing door, wherein the turnover mechanism comprises a turnover cylinder, a turning rod is connected to a rotating shaft of the turnover cylinder, and the turning rod is connected with the outer side of the vacuum sealing door. According to the vacuum sealing door, the vacuum sealing door is mounted on the flange of the vacuum surface of the loading and unloading piece cavity through the hinge, the vacuum sealing door can be turned up and down or turned horizontally through the telescopic motion of the turning cylinder, meanwhile, the workpiece table is mounted on the vacuum sealing door through the push rod and can be turned up and down or turned horizontally along with the vacuum sealing door, and at the moment, the workpiece table is in a horizontally placed state or a vertically placed state in the opening state of the vacuum sealing door, so that the substrate is convenient to load and unload, and the production efficiency is improved.
(6) In the ion beam deposition equipment, a rotatable four-side target table and a target material anti-fouling plate for shielding the target surface of the rotatable four-side target table are arranged in a sputtering chamber, and the rotatable four-side target table is connected with a fixed point swing mechanism for regulating and controlling the ion emergence angle of a target material; the target antifouling plate is connected with a cylinder driving link mechanism. The rotatable four-side target table is a cylindrical body with four target surfaces, 4 different targets can be installed, the target table has a rotating function and can rotate to adjust angles, the set target surface is rotated to a fixed position before sputtering each time, plasma bombardment of a sputtering ion source is received, films of at most 4 different targets can be deposited in one process, meanwhile, the target table has a rotating function and a fixed-point swinging function, when a certain target surface is selected for sputtering, the target table swings by 15 degrees maximally from side to side by taking the current target surface as a reference so as to improve the emergent angle of a sputtering atomic group and increase the coverage area of overflowing particles, and therefore the film deposition area and uniformity are improved. In addition, the target antifouling plate is used for shielding the target surface of the rotatable four-surface target table, so that cross contamination among targets in the film deposition process can be prevented, the antifouling effect is good, and the target table has a rotatable function, so that a cylinder driving link mechanism is further connected onto the target antifouling plate, the target antifouling plate is driven to move by the cylinder driving link mechanism, and when the target table rotates, the target antifouling plate is firstly moved away, so that the target table is prevented from touching the target antifouling plate; when the target material is sputtered, the three target material anti-fouling plates are tightly attached to the three target table surfaces of the target table, which are not sputtered, so that the target material which is not sputtered is prevented from being polluted, therefore, when one surface of the target table receives plasma bombardment, the target material on other three surfaces can be prevented from being polluted, and the anti-fouling effect of the target material is good. .
(7) In the ion beam deposition equipment, a correction plate for correcting the uniformity of a thin film is arranged in a sputtering chamber and is positioned between a workpiece table and a rotatable four-surface target table, the correction plate is connected with a cylinder driving link mechanism, and a substrate antifouling plate is arranged between the rotatable four-surface target table and the correction plate. According to the invention, the correction plate is arranged between the workpiece table and the four-surface rotatable target table, so that the shape of the correction plate is adjusted according to the ion distribution density sputtered from the target before the target ions are deposited on the substrate, and a part of area with high density is shielded, so that the film deposited on the surface of the substrate is more uniform. Meanwhile, a substrate antifouling plate is arranged between the rotating four-surface target table and the correction plate, so that oxide generated by target burning can be prevented from depositing on the substrate.
(8) In the ion beam deposition equipment, a cleaning ion source for cleaning a substrate on a workpiece table is arranged at the top of a sputtering chamber, the cleaning ion source is connected with a first mass flow controller through a first gas path pipeline, a sputtering ion source for bombarding a target material on a rotatable four-side target table is arranged at the bottom of the sputtering chamber, and the sputtering ion source is connected with a second mass flow controller through a second gas path pipeline. In the invention, the sputtering ion source and the cleaning ion source can work simultaneously, so that the adhesive force of the deposited film can be increased, the compactness of the film is improved, and the quality of the deposited film is improved.
(9) The ion beam deposition equipment also comprises an electric control system and a monitoring software system which are electrically connected, wherein the monitoring software system is completely designed autonomously, and a high-level language development interface is adopted to realize one-button automatic control.
(10) The invention also provides a film deposition method, which can be used for depositing a film on the surface of the substrate by utilizing the ion beam deposition equipment, can prepare the film with low damage, large size, high adhesive force and good uniformity, has the advantages of simple operation, high production efficiency, high productivity and the like, can realize the batch production of film deposition, and is beneficial to industrial application.
Drawings
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
FIG. 1 is a schematic layout view of an ion beam deposition apparatus for infrared metal films according to the present invention.
FIG. 2 is a schematic view of the layout of the enlarged deposition area with fixed point swing function of the rotatable four-sided target table in the ion beam deposition apparatus for infrared metal film of the present invention.
FIG. 3 is a schematic view of the ion source sputtering layout of the ion beam deposition apparatus for infrared metal film according to the present invention.
Illustration of the drawings:
1. a propulsion motor; 2. a rotating electric machine; 3. a bellows; 4. a push rod; 5. a workpiece stage; 6. a wafer loading and unloading chamber; 7. a first high vacuum isolation valve; 8. a sputtering chamber; 9. cleaning an ion source; 10. a first gas path pipeline; 11. a first pneumatic valve; 12. a first mass flow controller; 13. a target antifouling plate; 14. a four-side target table can rotate; 15. a vacuum seal door; 16. a slider; 17. a screw rod; 18. a second high vacuum isolation valve; 19. a first vacuum extractor; 20. a second mass flow controller; 21. a second pneumatic valve; 22. a second gas path pipeline; 23. a sputtering ion source; 24. a third high vacuum isolation valve; 25. a second vacuum extractor; 26. a correction plate; 27. a substrate anti-fouling plate.
Detailed Description
The invention is further described below with reference to the drawings and the specific preferred embodiments, without thereby limiting the scope of protection of the invention.
Example 1
As shown in fig. 1, the ion beam deposition apparatus for an infrared metal film of the present embodiment includes a loading and unloading piece chamber 6 and a sputtering chamber 8, wherein a first high vacuum isolation valve 7 is disposed between the loading and unloading piece chamber 6 and the sputtering chamber 8; the loading and unloading piece chamber 6 is provided with a vacuum sealing door 15, a pushing rod 4 penetrates through the vacuum sealing door 15, and a workpiece table 5 is arranged at one end of the pushing rod 4, which is positioned at the inner side of the vacuum sealing door 15; a propelling mechanism for propelling the propelling rod 4 is arranged outside the vacuum sealing door 15; the loading and unloading piece chamber 6 is connected with a first vacuum device 19. In the invention, a loading and unloading piece chamber 6 is arranged at one side of a cavity door of a sputtering chamber 8, in the loading process, a first high-vacuum isolation valve 7 is closed firstly, the vacuum environment of the sputtering chamber 8 is kept unchanged, then a vacuum sealing door 15 is opened, a substrate is installed on a workpiece table 5, then the vacuum sealing door 15 is closed, the loading and unloading piece chamber 6 is vacuumized by a first vacuumizing device 19, the loading and unloading piece chamber 6 is enabled to quickly establish the same vacuum environment as the sputtering chamber 8, finally the first high-vacuum isolation valve 7 is opened, and the substrate of the workpiece table 5 is pushed into the sputtering chamber 8 by a pushing mechanism to carry out film deposition. In the invention, by arranging the loading and unloading piece chamber 6, the times of cavity opening and vacuumizing of the sputtering chamber 8 can be reduced, the vacuumizing time can be shortened, and the productivity can be improved; meanwhile, the loading and unloading piece chamber 6 is arranged, so that the vacuum environment is always kept in the sputtering chamber 8, the problem that the target material is oxidized due to exposure in the atmosphere can be avoided, the target burning times can be reduced, and the utilization rate of the target material can be improved. The ion beam deposition equipment has the advantages of high productivity, high utilization rate of the target material and the like, can be widely used for depositing the infrared metal film, and has high use value and application prospect.
In this embodiment, the loading/unloading wafer chamber 6 is connected to a first vacuum pumping device 19, wherein the first vacuum pumping device 19 is composed of a backing pump, a molecular pump, a second high vacuum isolation valve 18, and a gauge, and is designed to establish a vacuum pressure environment required for loading/unloading the wafer chamber 6.
In this embodiment, the propelling mechanism includes a propelling motor 1, a screw rod 17 is connected to a rotating shaft of the propelling motor 1, a slider 16 is disposed on the screw rod 17, and the slider 16 is connected to the propelling rod 4. In the invention, the screw rod 17 is driven to rotate by driving the propelling motor 1, so that the slide block 16 slides on the screw rod 17 to drive the propelling rod 4 to move back and forth, and further drive the workpiece table 5 to move back and forth, the distance between the workpiece table 5 and the center of a target material in the sputtering chamber 8 can be adjusted, the adhesion of a film on the surface of a substrate can be improved, and the film with higher deposition adhesion can be prepared.
In this embodiment, a rotating mechanism for rotating the pushing rod 4 is further disposed outside the vacuum sealing door 15; the rotating mechanism comprises a rotating motor 2 arranged on the sliding block 16, and a rotating shaft of the rotating motor 2 is connected with the pushing rod 4; a corrugated pipe 3 for sealing the push rod 4 is arranged between the rotating motor 2 and the vacuum sealing door 15. According to the invention, the rotating motor 2 is driven to drive the push rod 4 to rotate, so that the workpiece table 5 is driven to rotate, the rotation speed of the workpiece table 5 can be adjusted, the deposition uniformity of the film on the surface of the substrate can be improved, and the film with better deposition uniformity can be prepared. Further, by providing the rotary motor 2 on the slider 16 of the propulsion mechanism, the propulsion mechanism and the rotation mechanism can be interlocked.
In this embodiment, a temperature control mechanism is arranged inside the workpiece table 5; the temperature control mechanism comprises a cooling pipe and cooling liquid circulating in the cooling pipe; the cooling liquid is silicone oil; the workpiece table 5 is in the shape of a circular plate (the size is 200mm × 20 mm); the work table 5 is provided with fixing holes for mounting substrates. In the invention, the cooling liquid with controllable temperature circulates in the workpiece table 5 and is used for regulating and controlling the temperature of the workpiece table 5, so that the temperature of the infrared substrate in the process can be controlled, the infrared substrate is prevented from being damaged in the process of temperature rise, and when the silicon oil is used as the cooling liquid for controlling the temperature, the temperature control range can reach-20-200 ℃, and the requirement of low-temperature deposition of the infrared substrate is met. In addition, the workpiece table 5 is a circular plate, and the surface of the workpiece table is provided with a fixing hole for mounting a substrate, so that the workpiece table can be compatible with substrates with different rules such as circular, square or special-shaped, and can be applied to circular substrates with the maximum size of 200 mm.
In this embodiment, the ion beam deposition apparatus further includes a turning mechanism for turning the vacuum sealing door 15; the turnover mechanism comprises a turnover cylinder, a turnover rod is connected to a rotation shaft of the turnover cylinder, and the turnover rod is connected with the outer side of the vacuum sealing door 15. According to the invention, the vacuum sealing door 15 is arranged on a flange of a vacuum surface of the loading and unloading piece cavity 6 through a hinge, the vacuum sealing door 15 can be turned up and down or turned horizontally through the telescopic motion of the turning cylinder, meanwhile, the workpiece table 5 is arranged on the vacuum sealing door 15 through the push rod 4 and can be turned up and down or turned horizontally along with the vacuum sealing door 15, and the workpiece table 5 is in a horizontal placement state or a vertical placement state in the opening state of the vacuum sealing door 15, so that the loading and unloading of substrates are facilitated, and the production efficiency is improved.
In this embodiment, a rotatable four-sided target table 14 and a target material anti-fouling plate 13 for shielding the target surface of the rotatable four-sided target table 14 are arranged in the sputtering chamber 8; the rotatable four-side target table 14 is connected with a fixed point swing mechanism for regulating and controlling the ion emergent angle of the target; the target material antifouling plate 13 is connected with a cylinder driving link mechanism. In the invention, the rotatable four-surface target table 14 is a column with four target surfaces, 4 different targets can be installed, the target table has a rotation function, can rotate to adjust the angle, rotates the set target surface to a fixed position before sputtering each time, receives plasma bombardment of a sputtering ion source, and can realize that a process can deposit films of 4 different targets at most; meanwhile, the target table has a fixed-point swinging function, and when a certain target surface is selected for sputtering, as shown in fig. 2, the target table swings at an angle of 15 degrees at most left and right by taking the current target surface as a reference so as to improve the emergent angle of sputtered atomic groups and increase the coverage area of overflowing particles, thereby improving the film deposition area and uniformity. In addition, antifouling board 13 of target for shelter from the target surface of rotatable four sides target platform 14, can prevent the cross contamination between the heavy membrane in-process target, antifouling effectual, and because the target platform has rotatable function, therefore further be connected with cylinder drive link mechanism on antifouling board 13 of target, constitute antifouling system of target by antifouling board 13 of target, cylinder drive link mechanism (including cylinder and link mechanism), be used for improving antifouling effect of target, specifically do: the cylinder drives the connecting rod mechanism to drive the target antifouling plate 13 to move, and when the target table rotates, the target antifouling plate 13 is moved away to prevent the target table from touching the target antifouling plate 13; when the target material is sputtered, the three target material anti-fouling plates 13 are tightly attached to the three target platform surfaces of the target platform which are not sputtered, so that the target material which is not sputtered is prevented from being polluted, therefore, when one surface of the target platform receives plasma bombardment, the target material on other three surfaces can be prevented from being polluted, and the anti-fouling effect of the target material is good.
In this embodiment, a correction plate 26 for correcting the uniformity of the thin film is provided in the sputtering chamber 8, and is located between the workpiece table 5 and the rotatable four-sided target table 14; the correction plate 26 is connected with a cylinder driving link mechanism; a substrate anti-fouling plate 27 is disposed between the rotatable four-sided target table 14 and the correction plate 26. In the invention, a uniformity correction system is formed by a correction plate 26 and a cylinder driving link mechanism (comprising a cylinder and a link mechanism) and is used for improving the uniformity of a deposited film, and the uniformity correction system specifically comprises the following steps: by arranging the correcting plate 26 between the workpiece table 5 and the four-face rotatable target table 14, before target ions are deposited on the substrate, the shape of the correcting plate 26 is adjusted according to the ion distribution density sputtered by the target, and a part of a region with high density is shielded, so that the thin film deposited on the surface of the substrate is more uniform. Meanwhile, a substrate antifouling plate 27 is arranged between the rotatable four-sided target table 14 and the correction plate 26, and can block oxide generated by target burning from depositing on the substrate.
In this embodiment, a cleaning ion source 9 for cleaning the substrate on the workpiece stage 5 is disposed at the top of the sputtering chamber 8, and the cleaning ion source 9 is connected to a first mass flow controller 12 through a first gas pipeline 10. In the invention, the cleaning ion source 9 is used for cleaning the substrate before film deposition, so that the surface of the substrate is cleaner, the roughness is improved, and the adhesive force of the film is improved. Meanwhile, the cleaning ion source 9 is connected with a first mass flow controller 12 through a first gas path pipeline 10, and a first pneumatic valve 11 is further arranged on the first gas path pipeline 12, so that a non-disturbance gas path system of the cleaning ion source 9 is formed, and the purpose of controlling the Ar gas flow required by plasma formation is achieved.
In this embodiment, a sputtering ion source 23 for bombarding the target surface of the rotatable four-sided target table 14 is disposed at the bottom of the sputtering chamber 8, and the sputtering ion source 23 is connected to a second mass flow controller 20 through a second gas path pipe 22. In the present invention, the sputter ion source 23 comprises an ion source head and a control power supply system, wherein the ion source head comprises a cathode filament, an anode cover, a screen grid mesh, an acceleration grid mesh, a neutralization part and a bias partThe ion source is provided with different voltage and current by a control power supply system, electrons are excited from a cathode filament in an ion source head under certain vacuum pressure, and the electrons collide with Ar gas to form Ar + The plasma is led out of the ion source head by the grid mesh, and impacts the target material at a certain energy and angle, and corresponding target material ions can overflow after the surface of the target material is impacted, and are finally deposited on the substrate. Meanwhile, the sputtering ion source 23 is connected with a second mass flow controller 20 through a second gas path pipeline 22, and a second pneumatic valve 21 is further arranged on the second gas path pipeline 22, so that a disturbance-free gas path system of the sputtering ion source 23 is formed, and the purpose of controlling the Ar gas flow required by plasma formation is achieved.
In the invention, the cleaning ion source 9 can be used together with the sputtering ion source 23 in the film deposition process, as shown in fig. 3, when a film is deposited on the surface of the substrate, the cleaning ion source 9 and the sputtering ion source 23 work simultaneously, the film deposition compactness is improved, and the film quality is improved.
In this embodiment, the sputtering chamber 8 is connected to a second vacuum extractor 25, wherein the second vacuum extractor 25 is composed of a backing pump, a molecular pump, a third high vacuum isolation valve 24, and a gauge, and is intended to establish a vacuum pressure environment required by the sputtering chamber 8.
In the embodiment, the ion beam deposition equipment is electrically connected with an electrical control system and a monitoring software system. In the invention, the electrical control system comprises an electrical element and a PLC controller and aims at controlling functions of a pump, a valve, a motor, temperature, air flow and the like. The monitoring software system is a man-machine interaction system specially developed and designed according to the ion beam deposition equipment and the deposition process thereof, and can check the real-time state of the equipment, send control commands, alarm processing, edit process files and realize full-automatic process flow. In the invention, the monitoring software system is completely and autonomously designed, and a high-level language development interface is adopted, so that one-click automatic control can be realized.
A film deposition method specifically comprises the following steps: the method for depositing the infrared metal film on the surface of the infrared substrate by using the ion beam deposition equipment comprises the following steps:
s1, feeding: and opening a vacuum sealing door 15 of the loading and unloading piece chamber 6, and installing the infrared substrate (tellurium-cadmium-mercury material) on the workpiece table 5.
S2, vacuumizing: the vacuum sealing door 15 of the loading and unloading piece chamber 6 is closed, and the first vacuum extractor 19 is opened to vacuumize the loading and unloading piece chamber 6 until the pressure is equal to that of the sputtering chamber 8.
S3, propulsion: the first high vacuum isolation valve 7 is opened, and the workpiece stage 5 is advanced into the sputtering chamber 8 by the advancing mechanism to deposit a thin film on the surface of the substrate. Before the first high vacuum isolation valve 7 is opened, the second vacuum device 25 is started to vacuumize the sputtering chamber 8
S4, temperature control: after the workpiece table 5 is pushed into the sputtering chamber 8, the temperature control mechanism is started to regulate and control the temperature of cooling liquid (the cooling liquid is conventional silicone oil purchased from the market) in the workpiece table 5, so that the temperature of the workpiece table 5 is maintained at-20 ℃ to 100 ℃, and the temperature of the infrared substrate in the deposition process is favorably reduced, and the high-temperature loss is avoided.
S5, voltage stabilization: the second mass flow controller 20 and the third high vacuum isolation valve 24 are adjusted to make the pressure of the sputtering chamber 8 be 0.1 Pa-1 Pa, thereby being beneficial to glow and leading out plasma.
S6, cleaning: and opening the cleaning ion source 9, starting brightness, leading out plasma to bombard the substrate on the workpiece table 5, and removing pollutants (such as dirt and oxide) on the surface of the substrate, which is beneficial to improving the adhesive force of the deposited film on the surface of the substrate. The technological parameters to be regulated for cleaning include air pressure of 0.7Pa, rotation speed of the bearing table of 10rpm, power supply voltage of 500V for cleaning ion source, etc.
S7, target burning: and turning on a sputtering ion source 23, starting, leading out plasma to bombard a target material (Al target) on the target surface of the rotatable four-side target platform 14, and removing oxides on the surface of the target material. In the target firing process, the substrate on the work stage 5 is masked with a substrate anti-fouling plate 27 to prevent the sputtered oxide from depositing on the substrate surface.
S8, depositing a film: and (3) turning on a sputtering ion source 23, starting luminance, leading out plasma to bombard the target material on the target surface of the rotatable four-surface target platform 14, and depositing ions sputtered from the surface of the target material on the surface of the substrate to obtain the substrate with the film deposited on the surface.
In the invention, 4 different types of infrared metal films can be deposited at one time by using the ion beam deposition equipment.
And S9, after the film deposition is finished, the workpiece platform 5 is retreated into the loading and unloading piece chamber 6 by utilizing the reverse rotation of the propelling mechanism, the first high-vacuum isolation valve 7 is closed, and the gas is filled until the pressure is equal to the external pressure.
S10, opening a vacuum sealing door 15 of the loading and unloading piece chamber 6, and taking out the substrate with the film deposited on the surface.
The above examples are merely preferred embodiments of the present invention, and the scope of the present invention is not limited to the above examples. All technical schemes belonging to the idea of the invention belong to the protection scope of the invention. It should be noted that modifications and adaptations to those skilled in the art without departing from the principles of the present invention should also be considered as within the scope of the present invention.

Claims (9)

1. The ion beam deposition equipment for the infrared metal film is characterized by comprising a loading and unloading piece chamber (6) and a sputtering chamber (8), wherein a first high-vacuum isolation valve (7) is arranged between the loading and unloading piece chamber (6) and the sputtering chamber (8); the loading and unloading piece chamber (6) is provided with a vacuum sealing door (15), a pushing rod (4) penetrates through the vacuum sealing door (15), and a workpiece table (5) is arranged at one end, on the inner side of the vacuum sealing door (15), of the pushing rod (4); a pushing mechanism for pushing the pushing rod (4) is arranged on the outer side of the vacuum sealing door (15); the loading and unloading piece chamber (6) is connected with a first vacuum-pumping device (19); the propelling mechanism comprises a propelling motor (1), a rotating shaft of the propelling motor (1) is connected with a screw rod (17), a sliding block (16) is arranged on the screw rod (17), and the sliding block (16) is connected with a propelling rod (4); a rotating mechanism for rotating the pushing rod (4) is further arranged on the outer side of the vacuum sealing door (15); the rotating mechanism comprises a rotating motor (2) arranged on a sliding block (16), and a rotating shaft of the rotating motor (2) is connected with the pushing rod (4); and a corrugated pipe (3) for sealing the push rod (4) is arranged between the rotating motor (2) and the vacuum sealing door (15).
2. The ion beam deposition apparatus according to claim 1, wherein a temperature control mechanism is provided outside the workpiece stage (5); the temperature control mechanism comprises a cooling pipe and cooling liquid circulating in the cooling pipe; the cooling liquid is silicone oil; the workpiece table (5) is in a circular plate shape; the workpiece table (5) is provided with a fixing hole for mounting a substrate.
3. The ion beam deposition apparatus according to claim 2, further comprising a flipping mechanism for flipping the vacuum sealing door (15); the turnover mechanism comprises a turnover cylinder, a turnover rod is connected to a rotation shaft of the turnover cylinder, and the turnover rod is connected with the outer side of the vacuum sealing door (15).
4. The ion beam deposition apparatus according to any one of claims 1 to 3, wherein a rotatable four-sided target table (14) and a target material anti-fouling plate (13) for shielding the target surface of the rotatable four-sided target table (14) are provided in the sputtering chamber (8); the rotatable four-side target table (14) is connected with a fixed point swing mechanism for regulating and controlling the ion emergent angle of the target material; the target antifouling plate (13) is connected with a cylinder driving connecting rod mechanism.
5. The ion beam deposition apparatus according to claim 4, wherein a correction plate (26) for correcting film uniformity is provided in the sputtering chamber (8) between the workpiece table (5) and the rotatable four-sided target table (14); the correction plate (26) is connected with a cylinder driving connecting rod mechanism; a substrate antifouling plate (27) is arranged between the rotatable four-side target table (14) and the correction plate (26).
6. The ion beam deposition apparatus according to any one of claims 1 to 3, wherein a cleaning ion source (9) for cleaning a substrate on the workpiece table (5) is arranged at the top of the sputtering chamber (8), and the cleaning ion source (9) is connected with a first mass flow controller (12) through a first gas pipeline (10); a sputtering ion source (23) for bombarding the target material on the rotatable four-surface target table (14) is arranged at the bottom of the sputtering chamber (8), and the sputtering ion source (23) is connected with a second mass flow controller (20) through a second gas path pipeline (22); the sputtering chamber (8) is connected with a second vacuum-pumping device (25).
7. The ion beam deposition apparatus of any of claims 1-3, wherein the ion beam deposition apparatus is electrically connected to an electrical control system and a monitoring software system.
8. A thin film deposition method for depositing a thin film on a surface of a substrate using the ion beam deposition apparatus for an infrared metal film according to any one of claims 1 to 7, comprising the steps of:
s1, feeding: opening a vacuum sealing door (15) of the loading and unloading piece chamber (6) and installing the substrate on the workpiece table (5);
s2, vacuumizing: closing a vacuum sealing door (15) of the loading and unloading piece chamber (6), and opening a first vacuumizing device (19) to vacuumize the loading and unloading piece chamber (6) until the loading and unloading piece chamber is equal in pressure with the sputtering chamber (8);
s3, propelling: and opening the first high vacuum isolation valve (7), and pushing the workpiece platform (5) into the sputtering chamber (8) by using the pushing mechanism to deposit a film on the surface of the substrate.
9. The thin film deposition method as claimed in claim 8, wherein the step S3 of depositing the thin film on the surface of the substrate further comprises the steps of:
s4, temperature control: after the workpiece table (5) is pushed into the sputtering chamber (8), a temperature control mechanism is started to regulate and control the temperature of cooling liquid in the workpiece table (5) so as to maintain the temperature of the workpiece table (5) at-40 ℃ to 200 ℃;
s5, voltage stabilization: adjusting a second mass flow controller (20) and a third high vacuum isolation valve (24) to enable the pressure of the sputtering chamber (8) to be 0.1 Pa-1 Pa;
s6, cleaning: opening a cleaning ion source (9), leading out plasma to bombard a substrate on the workpiece table (5), and removing pollutants on the surface of the substrate;
s7, target burning: turning on a sputtering ion source (23), leading out plasma to bombard the target material on the target surface of the rotatable four-surface target table (14), and removing the oxide on the surface of the target material;
s8, depositing a film: turning on a sputtering ion source (23), leading out plasma to bombard the target material on the target surface of the rotatable four-surface target table (14), and depositing ions sputtered from the surface of the target material on the surface of a substrate to obtain the substrate with a film deposited on the surface;
s9, after the film deposition is finished, the workpiece platform (5) is retreated into the loading and unloading sheet chamber (6) by utilizing the reverse rotation of the propelling mechanism, the first high vacuum isolation valve (7) is closed, and the gas is filled until the pressure is equal to the external pressure;
s10, opening a vacuum sealing door (15) of the loading and unloading piece chamber (6), and taking out the substrate with the film deposited on the surface.
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