CN211445880U - Pulse laser deposition and magnetron sputtering composite system - Google Patents
Pulse laser deposition and magnetron sputtering composite system Download PDFInfo
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- CN211445880U CN211445880U CN201922082352.7U CN201922082352U CN211445880U CN 211445880 U CN211445880 U CN 211445880U CN 201922082352 U CN201922082352 U CN 201922082352U CN 211445880 U CN211445880 U CN 211445880U
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Abstract
The utility model is suitable for a material manufacturing technical field provides a pulse laser deposition and magnetron sputtering combined system, include: a cavity, the top of which is provided with a substrate table; the pulsed laser deposition system comprises a target switching device arranged at the bottom of the cavity and a PLD (programmable logic device) target baffle arranged on the target switching device, wherein the PLD target baffle is provided with an opening, and the target switching device can switch the target on the PLD target baffle to the opening position; the magnetron sputtering system comprises a target material aligning device arranged in the cavity and used for controlling the magnetron sputtering target material to align the substrate table, a lifting device used for lifting the target material controlling device, and a magnetron baffle made of a magnetic shielding material and used for shielding the magnetron sputtering target material. The utility model discloses a have pulse laser deposition system and magnetron sputtering system simultaneously among the combined system to the manufacturing cost of device has been reduced.
Description
Technical Field
The utility model belongs to the technical field of the material is made, especially, relate to a pulse laser deposition and magnetron sputtering combined system.
Background
The pulse laser deposition system bombards the surface of the target material by using a focused laser beam, and the sputtered and gasified substances are adsorbed and deposited on the surface of the substrate after being cooled to form a film material. Pulsed laser deposition enables deposition of films of relatively complex composition, the composition of the deposited film remaining unchanged.
In the magnetron sputtering, argon ions are accelerated to bombard a target under the action of an electric field, a large number of target atoms are sputtered, and neutral target atoms (or molecules) are deposited on a substrate to form a film material.
Because the two methods have different film-forming principles and different materials, two different devices are required to be designed for the two film-forming methods, which increases the cost of the device.
SUMMERY OF THE UTILITY MODEL
The utility model provides a laser protection device aims at solving and how to provide a problem that has pulse laser deposition system and magnetron sputtering system's combined system with low costs and simultaneously.
The utility model is realized like this, a pulse laser deposition and magnetron sputtering combined system is provided, include:
a cavity, the top of which is provided with a substrate table;
the pulsed laser deposition system comprises a target switching device arranged at the bottom of the cavity and a PLD (programmable logic device) target baffle arranged on the target switching device, wherein the PLD target baffle is provided with an opening, and the target switching device can switch the target on the PLD target baffle to the opening position;
the magnetron sputtering system comprises a target material aligning device arranged in the cavity and used for controlling the magnetron sputtering target material to align the substrate table, a lifting device used for lifting the target material controlling device, and a magnetron baffle made of a magnetic shielding material and used for shielding the magnetron sputtering target material;
the lifting device can lower the target alignment device so that the magnetic control baffle shields the target on the target alignment device.
Still further, the target alignment apparatus includes: the magnetic control target material support is hinged to the top end of the support, and the driving device is in transmission connection with the magnetic control target material support.
Furthermore, the driving device is connected to the magnetic control target holder through a connecting rod, and the driving device drives the connecting rod to ascend and descend so as to realize angle adjustment of the magnetic control target holder.
Furthermore, the magnetic control target material support is hinged with the support through a connecting strip.
Still further, the target switching device includes: the rotary table, a target holder arranged on the rotary table, a first driving assembly used for driving the target holder to ascend and descend, a second driving assembly used for driving the rotary table to rotate, and a third driving assembly used for driving the target to revolve.
Furthermore, the pulse laser deposition and magnetron sputtering composite system is also provided with a RHEED system.
The utility model discloses the beneficial effect that can reach: the pulse laser deposition system and the magnetron sputtering system are arranged in the cavity at the same time, the PLD target in the pulse laser deposition system can be switched through the target switching device to be shielded in the PLD target baffle, pollution of the magnetron sputtering system is avoided, and the magnetron sputtering target in the magnetron sputtering system can be lifted through the lifting device to be shielded by the magnetron baffle, so that pollution of the pulse laser deposition system is avoided. Therefore, the pulse laser deposition system and the magnetron sputtering system are simultaneously arranged in one composite system, and the manufacturing cost of the device is further reduced.
Drawings
Fig. 1 is a schematic view of an overall structure of a pulse laser deposition and magnetron sputtering composite system provided by an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a target control device according to an embodiment of the present invention.
Fig. 3 is a schematic view of a baffle structure provided by the embodiment of the present invention.
Fig. 4 is a schematic view of a turntable structure provided in an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a driving device and a lifting device according to an embodiment of the present invention.
In the figure, 1, a cavity; 2. a substrate stage; 3. an acceptance screen; 4. an electron gun; 5. a PLD target baffle plate; 6. a magnetic control baffle plate; 8. a turntable; 9. a support; 10. a first driving assembly, 11, a second driving assembly; 12. a drive device; 13. carrying out magnetic control on a target material support; 14. a connecting rod; 15. opening a hole; 16. adjusting a rod; 17. a second flange; 18. a first lead screw; 19. a first bellows; 20. a first flange; 21. a second bellows; 22. a third flange; 23. a lift control motor; 24. a second lead screw; 25. an angle control motor; 33. and a third drive assembly.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The utility model discloses a set up pulsed laser deposition system and magnetron sputtering system in the cavity simultaneously, and the PLD target in the pulsed laser deposition system can be switched through the target auto-change over device and make it shield in the PLD target baffle, avoid the pollution of magnetron sputtering system; the magnetron sputtering target in the magnetron sputtering system can be lifted by the lifting device to be blocked by the magnetron baffle, so that the pollution of the pulsed laser deposition system is avoided. Therefore, the pulse laser deposition system and the magnetron sputtering system are simultaneously arranged in one composite system, and the manufacturing cost of the device is further reduced.
As shown in fig. 1, the utility model provides a pulse laser deposition and magnetron sputtering composite system, including:
the top of the cavity 1 is provided with a substrate table 2.
The pulsed laser deposition system comprises a target switching device arranged at the bottom of a chamber 1 and a PLD (also called pulsed laser) target baffle 5 arranged on the target switching device, wherein the PLD target baffle 5 is provided with an opening 15 (as shown in fig. 3), and the target switching device can switch a target (specifically, a PLD target) on the PLD target to the position of the opening 15.
The magnetron sputtering system comprises a target material aligning device arranged in the cavity 1 and used for controlling the magnetron sputtering target material to align the substrate table 2, a lifting device used for lifting the target material controlling device, and a magnetron baffle 6 made of magnetic shielding materials and used for shielding the magnetron sputtering target material.
The lifting device can lower the target alignment device to enable the magnetic control baffle 6 to shield the target on the target alignment device, and correspondingly, the lifting device can also lift the target control device to an original position to enable the target on the target alignment device to be exposed at the position of the magnetron sputtering.
Wherein, the cavity 1 can be in a round structure, a square structure and the like.
In this embodiment, the cavity may be connected to a vacuum pump to pump the gas in the cavity 1 through the vacuum pump, so that the cavity 1 is in a vacuum state, thereby satisfying the working requirement.
The lifting device may be a driving device disposed below the target aligning device, such as a hydraulic mechanism, a cylinder mechanism, a screw mechanism, or other mechanisms capable of achieving linear motion, so as to be lowered or raised by the lifting device when the target aligning device needs to be lowered or raised.
The operation of this embodiment is as follows:
when the PLD is used for sputtering, the PLD target is switched by the target switching device to face the opening 15 formed in the PLD target baffle 5, and at the same time, the magnetron sputtering target is lowered to the bottom by the lifting device and covered by the magnetron baffle 6 made of a magnetic shielding material. Thus, the magnetron sputtering target material can be prevented from being polluted when PLD sputtering is used.
When magnetron sputtering coating is used, the target switching device switches the PLD target to leave the opening 15 formed in the PLD target baffle 5, meanwhile, the magnetron sputtering target is lifted up by opening the magnetron baffle 6 through adjustment of an adjusting rod 16 (penetrating into the cavity from the side surface of the cavity and connecting with the magnetron baffle 6), and the target alignment device adjusts the angle of the magnetron sputtering target to enable the magnetron sputtering target to face the substrate table 2, so that magnetron sputtering coating is performed. Therefore, the PLD target can be prevented from being polluted when magnetron sputtering coating is used.
The adjusting rod 16 can open or close the magnetic control baffle 6 in a rotating manner, for example, one end of the magnetic control baffle 6 is connected with one end of the adjusting rod 16 through magnetic coupling; the magnetic control baffle 6 is opened or closed by rotating an adjusting rod, and if the magnetic control baffle 6 is connected with the adjusting rod 16.
In the embodiment, the pulsed laser deposition system and the magnetron sputtering system are simultaneously arranged in the cavity 1, and the PLD target in the pulsed laser deposition system can be switched by the target switching device to be shielded in the PLD target baffle 5, so that the pollution of the magnetron sputtering system is avoided, while the magnetron sputtering target in the magnetron sputtering system can be lifted by the lifting device to be shielded by the magnetron baffle 6, so that the pollution of the pulsed laser deposition system is avoided. Therefore, a pulse laser deposition system and a magnetron sputtering system are simultaneously arranged in one composite system, and the manufacturing cost of the device is further reduced.
As another alternative embodiment of the present invention, as shown in fig. 2, the target alignment apparatus includes: the device comprises a magnetic control target material support 13, a support 9 and a driving device 12, wherein the magnetic control target material support 13 is hinged to the top end of the support 9, and the driving device 12 is in transmission connection with the magnetic control target material support 13.
The driving device 12 is a motor or a hydraulic mechanism.
The magnetron sputtering target is arranged on the magnetron target holder 13.
The driving device 12 is in transmission connection with the magnetic control target holder 13, and the magnetic control target holder 13 is hinged to the top end of the support 9, so that the magnetic control target holder 13 can be driven by the driving device 12 to rotate on the support 9, so as to realize angle adjustment of the magnetic control target holder 13, and align the magnetic control sputtering target 7 to the substrate table 2.
Specifically, as shown in fig. 5, the driving device includes: the angle control device comprises an angle control motor 25 (a motor), a first flange 20 connected with the output end of the angle control motor 25, a first corrugated pipe 19 arranged on the first flange 20, a second flange 17 arranged at the other end of the first corrugated pipe 19, and a first screw rod 18 arranged between the first flange 20 and the second flange 17. Therefore, when the angle control motor 25 is started, the target can be driven to lift by the lifting of the first flange 20.
As another alternative embodiment of the present invention, as shown in fig. 2, the driving device 12 is connected to the magnetron target holder 13 through a connecting rod 14, and the driving device 12 drives the connecting rod 14 to move up and down to adjust the angle of the magnetron target holder 13.
Specifically, the second flange 17 is connected to the magnetron target holder 13 through the connecting rod 14.
The driving device 12 is connected to the magnetron target holder 13 through a connecting rod 14, so that when the driving device 12 is started, the angle of the magnetron target holder 13 can be adjusted more accurately by means of the lifting and relaying action of the connecting rod 14.
As another alternative embodiment of the present invention, the magnetron target holder 13 is hinged to the support 9 through a connecting strip (not shown in the figure).
Specifically, hinge holes are formed in two sides of the top end of the support 9, the connecting strip penetrates through the magnetic control target holder 13 to be fixedly connected with the magnetic control target holder, and two ends of the connecting strip are connected with the hinge holes.
The magnetic control target material support 13 is hinged with the support 9 through a connecting strip, so that the magnetic control target material support 13 can be conveniently rotated and disassembled.
As another alternative embodiment of the present invention, as shown in fig. 5, the lifting device includes: the lifting device comprises a lifting control motor 23 (motor), a third flange 22 connected with the output end of the lifting control motor 23, and a second corrugated pipe 21 arranged on the third flange 22, wherein the other end of the second corrugated pipe 21 is connected with the first flange 20, and a second screw 24 is arranged between the third flange 22 and the first flange 20.
Therefore, when the lifting control motor 23 is started, the third flange 22 can be controlled to lift, so as to drive the connecting rod 14 to move up and down, and further adjust the angle of the magnetic control target material, and when the angle control motor 25 is started, the first flange 20 can be controlled to lift, so as to adjust the lifting of the magnetic control target material.
As another optional embodiment of the present invention, the target material switching device includes: the target rotating device comprises a rotating disc 8 (shown in fig. 1 or fig. 4), a target holder arranged on the rotating disc 8, a first driving assembly 10 (shown in fig. 1) for driving the target holder to ascend and descend, a second driving assembly 11 (shown in fig. 1) for driving the rotating disc 8 to rotate, and a third driving assembly 33 for driving the target to revolve.
Wherein the PLD target is disposed on the target holder.
A shell is arranged outside the rotary disc to prevent the rotary disc from being damaged.
The first driving assembly 10 includes a first motor (motor), a first driving part connected to the first motor, and a first rotation driving gear connected to an output shaft of the first driving part.
The second driving unit 11 includes a second motor, a second driving unit connected to the second motor, and a second rotation driving gear connected to an output shaft of the second driving unit.
Specifically, the target holder is a plurality of (two, three, four, five, etc.), the target holders are uniformly arranged on the same circumference of the top surface of the turntable 8, corresponding target holder rotation gears are arranged on the bottom surface of the turntable 8, and the first rotation driving gear is meshed with the target holder rotation gears to drive the target holder rotation gears to rotate.
The rotary disc 8 is mounted on the output shaft of the second driving part through a one-way bearing of the rotary disc 8, and is driven to rotate through the second rotation driving gear arranged on the output shaft of the second driving part.
The PLD target baffle 5 is mounted on a baffle one-way bearing and is mounted on an output shaft of the second driving part through the baffle one-way bearing. The PLD target baffle 5 is in a wafer shape (an elliptic sheet shape, a regular polygon sheet shape, etc.), an opening 15 corresponding to the target holder is arranged at a position close to the outer edge of the PLD target baffle 5, the radius of the opening 15 is the same as that of the target holder, and the distance between the center of the opening 15 and the center of the target holder and the output shaft of the second driving part is the same, so that the opening 15 can be opposite to the target in the target holder when the PLD target baffle 5 rotates.
The second motor is used for driving the turntable 8 to rotate through the second driving part so as to realize the rotation of the PLD target baffle 5, thereby adjusting the position of the opening 15 on the PLD target baffle 5.
The first motor is used for driving the target holder rotation gear to rotate through the first driving part, so that the target holder rotation gear and the target holder are driven to rotate, and the laser is uniformly applied to the surface.
As a further alternative embodiment of the present invention, as shown in fig. 1, the combined system of pulsed laser deposition and magnetron sputtering is further provided with a RHEED (also called reflection high energy electron diffractometer) system.
The RHEED system comprises an electron gun 4 and an acceptance screen 3 which are arranged on two sides of the cavity 1.
The RHEED system is arranged on the cavity 1, so that the system realizes the measurement function of the sample, and the structural information of the sample can be observed in real time. And the magnetron sputtering target 7 can be lowered to the bottom of the cavity 1 through the lifting device and is covered by the magnetron baffle 6, so that the interference of the magnetic field of the magnetron sputtering target 7 on the RHEED system is avoided, and the RHEED system can normally run.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (6)
1. A pulsed laser deposition and magnetron sputtering composite system, comprising:
a cavity, the top of which is provided with a substrate table;
the pulsed laser deposition system comprises a target switching device arranged at the bottom of the cavity and a PLD (programmable logic device) target baffle arranged on the target switching device, wherein the PLD target baffle is provided with an opening, and the target switching device can switch the target on the PLD target baffle to the opening position;
the magnetron sputtering system comprises a target material aligning device arranged in the cavity and used for controlling the magnetron sputtering target material to align the substrate table, a lifting device used for lifting the target material controlling device, and a magnetron baffle made of a magnetic shielding material and used for shielding the magnetron sputtering target material;
the lifting device can lower the target alignment device so that the magnetic control baffle shields the target on the target alignment device.
2. The composite pulsed laser deposition and magnetron sputtering system of claim 1, wherein the target alignment device comprises: the magnetic control target material support is hinged to the top end of the support, and the driving device is in transmission connection with the magnetic control target material support.
3. The composite pulsed laser deposition and magnetron sputtering system of claim 2, wherein the driving device is connected to the magnetron target holder through a connecting rod, and the driving device drives the connecting rod to move up and down to adjust the angle of the magnetron target holder.
4. The composite pulsed laser deposition and magnetron sputtering system of claim 2 wherein the magnetron target holder is hinged to the support by a connecting bar.
5. The composite pulsed laser deposition and magnetron sputtering system of claim 1, wherein the target switching device comprises: the rotary table, a target holder arranged on the rotary table, a first driving assembly used for driving the target holder to ascend and descend, a second driving assembly used for driving the rotary table to rotate, and a third driving assembly used for driving the target to revolve.
6. The composite pulsed laser deposition and magnetron sputtering system of claim 1 wherein the composite pulsed laser deposition and magnetron sputtering system is further provided with a RHEED system.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922082352.7U CN211445880U (en) | 2019-11-27 | 2019-11-27 | Pulse laser deposition and magnetron sputtering composite system |
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| CN201922082352.7U CN211445880U (en) | 2019-11-27 | 2019-11-27 | Pulse laser deposition and magnetron sputtering composite system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112921404A (en) * | 2021-02-09 | 2021-06-08 | 北京北方华创微电子装备有限公司 | Semiconductor etching equipment and etching method of silicon carbide wafer |
| CN112951693A (en) * | 2021-02-09 | 2021-06-11 | 北京北方华创微电子装备有限公司 | Semiconductor etching equipment and etching method |
-
2019
- 2019-11-27 CN CN201922082352.7U patent/CN211445880U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112921404A (en) * | 2021-02-09 | 2021-06-08 | 北京北方华创微电子装备有限公司 | Semiconductor etching equipment and etching method of silicon carbide wafer |
| CN112951693A (en) * | 2021-02-09 | 2021-06-11 | 北京北方华创微电子装备有限公司 | Semiconductor etching equipment and etching method |
| CN112951693B (en) * | 2021-02-09 | 2024-01-05 | 北京北方华创微电子装备有限公司 | Semiconductor etching apparatus and etching method |
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