KR20200014169A - Film formation apparatus and manufacturing method of electronic device - Google Patents

Abstract

An objective of the present invention is to provide a film deposition apparatus and a manufacturing method of an electronic device which can easily perform pre-sputtering with good productivity. The film deposition apparatus (1) of the present invention comprises: a chamber (10) in which a film deposition object (6) and a cylindrical target (2) are disposed; a magnetic field generation means (3) installed inside the target (2) and generating a magnetic field leaking from the outer circumferential surface of the target (2); and a target driving means (11) for rotationally driving the target (2). The film deposition apparatus (1) has: a magnetic shield member (5) movably installed between the inner circumferential surface of the magnetic field generating means (3) and the inner circumferential surface of the target (2); and a shield member driving means (12) for driving the magnetic shield member (5).

Description

FILM FORMATION APPARATUS AND MANUFACTURING METHOD OF ELECTRONIC DEVICE

TECHNICAL FIELD This invention relates to a film-forming apparatus and the manufacturing method of an electronic device.

The sputtering method is widely known as a method of forming the thin film which consists of materials, such as a metal and a metal oxide, in film-forming objects, such as a board | substrate and the laminated body formed on the board | substrate. The sputtering apparatus which forms into a film by the sputtering method has the structure arrange | positioned facing the film-forming object and the target which consists of film-forming materials in a vacuum chamber. When a negative voltage is applied to the target, plasma is generated in the vicinity of the target, the target surface is sputtered by the ionized inert gas element, and the sputtered particles released are deposited on the film formation object to form a film. A magnetron sputtering method is also known, in which a magnet is placed on the back of the target (in the case of a cylindrical target, inside the target), and sputtered by increasing the electron density in the vicinity of the cathode by the generated magnetic field.

In the conventional film forming apparatus of this type, for example, after a target is exchanged, after the inside of the chamber is opened to the atmosphere, or when the target is not exposed to the plasma without performing the film forming process continuously, for example, The surface of the target may be oxidized or deteriorated. As described above, when the surface of the target is oxidized or deteriorated, or when foreign matter adheres to the surface of the target, the sputter is sputtered on other than the film forming target to clean the surface of the target before sputtering the film forming target. It is performed (patent document 1).

As a sputter | spatter in the rotary cathode RC which also sputters, rotating a target; also called a rotating cathode and a rotable cathode, there exists a method as described in patent document 2, for example.

In the sputtering apparatus of patent document 2, following three states can be taken by rotating the magnet (magnet assembly) provided in RC inside.

(1) The state in which the plasma is directed to the opposite side of the substrate (film forming object)

(2) The state in which the plasma is directed laterally (direction parallel to the film formation surface of the substrate)

(3) The state in which the plasma is directed toward the substrate

That is, by generating plasma in the state of (1) and maintaining it in the state of (1) or (2), pre-sputtering can be performed without sputtering to a board | substrate. After completion of the free sputtering, when the magnet is rotated to a state of (3), the sputter can be transferred from the free sputtering without moving the substrate or RC.

Japanese Patent Application Laid-Open No. 2016-204705 Japanese Patent Publication No. 2015-519477

However, in the method of rotating a magnet as described in patent document 2, when a film-forming object becomes large and RC becomes long, a magnet becomes heavy and it becomes difficult to rotate.

As another method, the method of pre-sputtering by moving the whole RC to the position for pre-sputter can also be considered, but moving distance becomes long and productivity will fall.

An object of the present invention is to provide a film forming apparatus and a manufacturing method of an electronic device which can easily perform a pre sputtering with good productivity.

According to one aspect of the present invention, there is provided a film forming apparatus comprising: a chamber in which a film forming object and a cylindrical target are disposed, a magnetic field generating means provided inside the target, and generating a magnetic field leaking from an outer circumferential surface of the target; A film forming apparatus having target driving means for rotating the apparatus, comprising: a magnetic shield member movably provided between the magnetic field generating means and the inner circumferential surface of the target, and a shielding member driving means for driving the magnetic shield member. It features.

In addition, the film forming apparatus according to another aspect of the present invention includes a chamber in which a film forming object and a cylindrical target are disposed therein, magnetic field generating means installed in the target and generating a magnetic field leaking from an outer peripheral surface of the target; A film forming apparatus comprising target driving means for rotationally driving the target, comprising: a magnetic shield member disposed between the magnetic field generating means and the inner peripheral surface of the target so as to be coaxially rotatable with the target, and the magnetic shield member. It has a shield member drive means which drives rotation.

Moreover, the film-forming apparatus as another aspect of this invention is a magnetic field generating means which generate | occur | produces the chamber in which the film-forming object and the cylindrical target are arrange | positioned inside, and is provided in the inside of the target, and leaks from the outer peripheral surface of the said target. And a target driving means for rotationally driving the target, the film forming apparatus being formed on the film forming object disposed in the film forming area in the chamber, the film forming apparatus being provided so as to be movable between the magnetic field generating means and the inner circumferential surface of the target. A first operation mode having a magnetic shield member and discharging in a state where the magnetic field generating means is disposed between the magnetic shield member and the film forming area, and the magnetic shield member between the magnetic field generating means and the film forming area. And a switchable second operation mode for discharging in a state arranged in the The.

Moreover, the manufacturing method of the electronic device as another aspect of this invention includes the sputter film deposition process which arrange | positions a film-forming object in a chamber, deposits sputter | spatter particles which fly out of the cylindrical target arrange | positioned facing the said film-forming object, and forms a film. A method of manufacturing an electronic device comprising: a magnetic field toward both a first direction from the magnetic field generating means to the film forming object and a second direction away from the film forming object by magnetic field generating means disposed inside the target. And a sputtering step of discharging while rotating the target while shielding the magnetic field generated in the first direction, and a bone discharging while rotating the target while shielding the magnetic field generated in the second direction. It is characterized by having a sputtering process.

According to this invention, a free sputter | spatter can be performed simply with favorable productivity.

1: (A) is a schematic diagram which shows the structure of the film-forming apparatus of Embodiment 1, (B) is a perspective view of the magnetic shield plate of Embodiment 1. FIG.
FIG. 2: (A) is a schematic diagram which shows the structure of the film-forming apparatus of Embodiment 1 of this sputter mode state, (B) is a side view of the film-forming apparatus of embodiment. FIG.
3 is a perspective view of the first magnet unit of Embodiment 1. FIG.
4: (A) is a perspective view which shows an example of a drive mechanism, (B) is sectional drawing which shows an example of a drive mechanism.
(A) is a perspective view which shows another example of a drive mechanism, (B) is sectional drawing which shows another example of a drive mechanism.
FIG. 6 is a schematic diagram showing the configuration of a film forming apparatus of Embodiment 2. FIG.
FIG. 7: (A) is a schematic diagram which shows the structure of the film-forming apparatus of Embodiment 3, (B) is a perspective view of the partition plate of Embodiment 3. FIG.
8 shows a general layer structure of an organic EL element.

EMBODIMENT OF THE INVENTION Below, embodiment of this invention is described in detail. However, the following embodiments are merely illustrative of the preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In addition, in the following description, the hardware configuration, software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like of the apparatus are intended to limit the scope of the present invention only to them unless otherwise specified. It is not.

Embodiment 1

First, with reference to FIG. 1 (A) and FIG. 2 (A), the basic structure of the film-forming apparatus 1 of Embodiment 1 is demonstrated. FIG. 1A shows the configuration of the film deposition apparatus 1 in the pre-sputter mode state, and FIG. 2A shows the configuration of the film deposition apparatus 1 in the present sputter mode state.

The film-forming apparatus 1 which concerns on this embodiment is a board | substrate (including the thing in which a laminated body is formed on a board | substrate) in manufacture of various electronic devices, such as a semiconductor device, a magnetic device, an electronic component, and an optical component. It is used to deposit and form a thin film. More specifically, the film forming apparatus 1 is preferably used in the manufacture of electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Especially, the film-forming apparatus 1 which concerns on this embodiment is especially applicable to manufacture of organic light emitting elements, such as organic EL (ErectroLuminescence) element, and organic photoelectric conversion elements, such as an organic thin film solar cell. . Moreover, the electronic device in this invention is a display apparatus (for example, organic electroluminescent display) provided with a light emitting element, an illumination apparatus (for example, organic electroluminescent apparatus), and the sensor provided with a photoelectric conversion element (for example, Organic CMOS image sensor).

8 schematically shows a general layer structure of an organic EL element. As shown in FIG. 8, the structure in which an organic electroluminescent element is formed into a board | substrate in order of an anode, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron carrying layer, an electron injection layer, and a cathode is common. The film forming apparatus 1 according to the present embodiment is very preferably used when forming a laminated film such as a metal or a metal oxide used for an electron injection layer or an electrode (cathode) by sputtering on an organic film. . In addition, it is not limited to the film-forming on an organic film, If it is a combination of materials which can form into a film by sputter | spatter, such as a metal material and an oxide material, lamination can be formed into various surfaces.

The film forming apparatus 1 includes a gas inlet 7 and an exhaust port (not shown), and has a chamber 10 capable of maintaining the interior in a vacuum. An inert gas such as argon or a reactive gas is supplied to the inside of the chamber 10 by a gas introduction means (not shown) via the gas inlet 7, and an exhaust port (not shown) is provided from the inside of the chamber 10. Vacuum exhaust is performed by an exhaust means not shown.

In the chamber 10, a film forming object 6, which is an object to be formed by the film forming apparatus 1, and a cylindrical target 2 are disposed to face the film forming object 6. In the state where the target 2 is arrange | positioned in the chamber 10, the film-forming object 6 is conveyed to the film-forming area A0 which is an area | region in the chamber 10 which opposes the target 2 by the conveyance means which is not shown in figure. Film forming treatment may be performed. The film forming object 6 may be moved in a film forming area A0 by a film forming object driving means (not shown) in a direction parallel to the film forming surface of the film forming object 6. Inside the target 2, a magnet unit 3 as a magnetic field generating means is provided. The target 2 is rotationally driven by the target drive apparatus 11 as a drive means, making the cylindrical center axis of the target 2 into an axis of rotation. The magnet unit 3 is mounted in the sealed case 4 and constitutes a rotary cathode 8 together with the target 2.

The target 2 functions as a supply source of film forming material for forming a film on the film forming object 6. Although the material of the target 2 is not specifically limited, For example, metal targets, such as Cu, Al, Ti, Mo, Cr, Ag, Au, Ni, and its alloy material are mentioned. As for the target 2, the layer which consists of other materials, such as a backing tube, may be formed inside the layer in which these film-forming materials were formed. In addition, although the target 2 is a cylindrical target, the "cylindrical shape" here does not mean only a mathematically rigid cylinder, but a mother line is a curve instead of a straight line, and the cross section perpendicular | vertical to a central axis is a mathematically rigid "circle". This includes anything that is not. That is, the target 2 in this invention should just be a cylindrical thing rotatable about a central axis.

The magnet unit 3 includes a first region A1 which is an area between the target 2 and the film forming object 6 disposed in the film forming area A0, and a second area A2 in a direction away from the film forming object. In this configuration, the magnetic field for concentrating the plasma P in the vicinity of the outer circumference of the target 2 is generated. Moreover, inside the target 2, the magnetic shield plate 5 which shields a magnetic field is arrange | positioned between the inner periphery of the target 2 and the magnet unit 3 so that a movement is possible. In addition, the "shielding" here does not only mean blocking 100% of the magnetic field passing through the magnetic shield plate 5, but also includes reducing the magnetic field passing through the magnetic shield plate 5.

The magnetic shield plate 5 shields the generation of the magnetic field in the first area A1 and allows the generation of the magnetic field in the second area A2 and the first shielding position I (FIG. 1 ( A) second shielding position II that shields the generation of the magnetic field in the second area A2 and allows the generation of the magnetic field in the first area A1 (see FIG. 2 (A)). It is movable between them, and is driven by the shielding plate drive device 12.

The target 2 is connected to a power source 13 for applying a bias voltage. In addition, the chamber 10 is grounded. The film forming apparatus 1 controls the shielding plate driving apparatus 12, the target driving apparatus 11, and the power supply 13 by the control apparatus 14 before the present sputtering to form the film forming target 6. A pre sputtering is performed to clean the surface of the target 2. The pre-sputter moves the magnetic shield plate 5 to the first shielding position I (see FIG. 1A), sputters the target 2 in the second region A2, and the target 2. It is a mode to remove oxides, deteriorated parts and adhered foreign substances on the surface. Thereafter, the magnetic shield plate 5 is moved to the second shielding position II, and the sputtering is performed so as to perform the sputtering of the sputtered target 2 which is cleaned in the pre-sputter mode.

In the example shown, the film-forming object 6 is arrange | positioned at the ceiling side of the chamber 10 parallel to the rotation axis of the rotary cathode 8, ie horizontally, and is hold | maintained by the board | substrate holder which both edges are not shown in figure, have. The film formation object 6 is carried in from the entrance gate (not shown) provided in the side wall of the chamber 10, for example, moves to the deposition position in the deposition area A0, and is formed into a film. Is discharged from. As described above, the film forming apparatus 1 may have a configuration of a so-called depot in which film formation is performed in a state where the film formation surface of the film forming object 6 is directed downward in the gravity direction. However, the present invention is not limited thereto, and the film forming object 6 is disposed on the bottom surface side of the chamber 10, and the rotary cathode 8 is disposed above the film forming object 6, and the film forming surface of the film forming object 6 faces upward in the gravity direction. It may be a configuration of so-called depot down, in which film formation is performed at. Or the film-forming object may be formed in the state in which the film-forming object 6 was erected vertically, ie, the film-forming surface of the film-forming object 6 is parallel to the gravity direction.

As shown in FIG. 2 (B), the rotary cathode 8 is disposed almost at the center in the vertical direction of the chamber 10, and both ends thereof are rotatably supported via the support block 300 and the end block 200. have.

(Arrangement structure of the magnetic unit 30)

The magnet unit 30 is different from the first magnet unit 3A that forms the magnetic field in the direction (first direction) toward the film forming object 6 and the direction away from the film forming object 2, that is, the first direction. It is comprised by the 2nd magnet unit 3B which forms a magnetic field in the 2nd direction which is a reverse direction. The first magnet unit 3A and the second magnet unit 3B are superimposed on each other by back matching, and the strength of the magnetic force is set to be the same. In addition, a space may be provided between the first magnet unit 3A and the second magnet unit 3B. The 1st magnet unit 3A and the 2nd magnet unit 3B are basically the same structure, The structure is demonstrated using the 1st magnet unit 3A as an example.

As shown in FIG. 3, the first magnet unit 3A includes a center magnet 31 extending in parallel with the rotation axis of the rotary cathode 8, a center magnet 31 surrounding the center magnet 31, and Has a peripheral magnet 32 and a yoke plate 33 of another pole. The peripheral magnet 32 includes a pair of straight portions 32a and 32b extending in parallel with the center magnet 31, and a previous portion 32c connecting both ends of the straight portions 32a and 32b; 32c). The second magnet unit 3B has the same configuration.

The magnetic field formed by the magnet unit 30 has a magnetic force line returning in a loop shape from the magnetic pole of the center magnet 31 toward the straight portions 32a and 32a of the peripheral magnet 32. As a result, in the vicinity of the surface of the target 2, a tunnel of a toroidal magnetic field extending in the longitudinal direction of the target 2 is formed. By this magnetic field, electrons are captured, the plasma is concentrated in the vicinity of the surface of the target 2, and the efficiency of sputtering is improved.

(Configuration of the case)

The case 4 is a cylindrical sealed box, and the magnet unit 30 is disposed in the case 4. The center axis of the case 4 and the center axis of the target are assembled coaxially with the center axis N of the rotary cathode 8. In addition, the yoke plate 33 of the magnet unit 3 is located on a horizontal plane passing through the central axis N, and the center magnets 31 and 31 of the first magnet unit 3A and the second magnet unit 3B. The vertical plane passing through the center of) is arranged to pass through the center axis.

On the other hand, the magnetic shield plate 5 is an arc-shaped plate member along the inner circumference of the cylindrical case 4, as shown in FIGS. 1A and 1B, and is fixed to the inner circumference of the case 4. have. In the example shown in figure, the magnetic shield plate 5 has the structure which covers the semicircle of the case 4, and has a semicylindrical shape. The magnetic shield plate 5 may be fixed to the inner circumference of the case 4, or may be fixed by a fastening member such as a screw. In some cases, the material of the case 4 itself may be magnetic with respect to the portion. You may comprise with a member.

The material of the magnetic shield plate 5 is not particularly limited as long as it is a material that absorbs magnetic flux and tends to concentrate inside, that is, a material having a high specific permeability. It is preferable that the specific permeability of the material which comprises the magnetic shield plate 5 is 500 or more, It is preferable that it is 1000 or more, It is more preferable that it is 3000 or more. In addition, the upper limit of the specific permeability of the material which comprises the magnetic shield plate 5 is not specifically limited, For example, 10 million or less may be sufficient and 1 million or less may be sufficient as it. More specifically, the material constituting the magnetic shield plate 5 is preferably a ferromagnetic material. For example, Fe, Co, Ni, an alloy thereof, permalo or mu metal or the like can be used.

(Drive mechanism of target and drive mechanism of shield plate)

4: (A) is a schematic perspective view which shows an example of the target drive mechanism 11 and the shield plate drive mechanism 12, and FIG. 4 (B) is sectional drawing along the rotating shaft of the rotor cathode 8. FIG.

As described above, the rotary cathode 8 is rotatably supported by the end block 200 and the support block 300 at both ends in the longitudinal direction. In this example, the magnetic shield plate 5 is fixed to the inner circumference of the cylindrical case 4, and the rotation of the circumference of the center magnet unit 3 is caused by the rotation of the case 4. The magnet unit 3 is fixed in the rotational direction by the fixed shaft 35.

The end block 200 is fixed to the wall of the chamber 10 and has a hollow box shape through the outer space. The power transmission shaft 21 which transmits power to the target 2 and the power transmission shaft 41 which transmits power to the case 4 protrude into the hollow inside of the end block 200. Each of the power transmission shafts 21 and 41 is connected to the motor 130 serving as a drive source via the belt transmission mechanisms 110 and 120 as the drive transmission mechanism, respectively, so that the rotational driving force is transmitted. In the example shown, the belt transmission mechanisms 110 and 120 use the toothed type of a belt and pulley, but it is not limited to this.

In this example, the target drive device 11 and the shield plate drive device 12 use the same motor 130. That is, the drive side pulley 111 of the belt transmission mechanism 110 is fixed in the middle of the output shaft 131 directly connected to the motor 130, and the end of the output shaft 131 is an electromagnetic clutch ( It is connected to the drive side pulley 121 of the magnetic plate drive device 12 via 125. In addition, an electromagnetic brake 126 is provided on the driven pulley 122 of the magnetic plate driving apparatus 12 so as to be held in the stop position.

The power transmission shaft 21 of the target 2 is a cylindrical hollow shaft, and the power transmission shaft 41 of the case 4 protrudes from the power transmission shaft 21 of the target 2 through the hollow hole. The power transmission shaft 41 of the case 4 is also a hollow shaft, and the fixed shaft 35 which fixes the magnet unit 3 through the hollow hole protrudes toward the end block 200 side. The power transmission shaft 21 of the target 2 protrudes in the center of the end plate 22 fixed to the end of the target 2, and the power transmission shaft 41 of the case 4 is provided. It protrudes in the center of the end plate 42 of the case 4, and is provided.

On the other hand, the support block 300 is disposed in the chamber 10, and the driven side rotation shafts 24 and 44 provided at the ends of the target 2 and the case 4 are rotatably supported by the support block 300. It is. Unlike the end block side, the support side rotation shaft 24 of the case 4 may not penetrate the driven side rotation shaft 24 of the target 2, and the case 4 does not pass through the driven side rotation shaft 24 of the target 2. It is not necessary for the fixed shaft 35 to penetrate the driven side rotating shaft 44 of.

In addition, although the support block 300 is disposed inside the chamber 10 and the end block 200 is disposed outside the chamber 10, the present invention is not limited thereto, and the end block 200 also includes the chamber 10. It may be arranged inside. In this case, the motor 130 and the like may also be disposed inside the end block 200. The end block 200 and the support block 300 may be disposed inside the chamber 10, and may move in parallel with the rotary cathode 8 with respect to the film formation surface of the film formation object 6. With this configuration, the rotary cathode 8 can be driven in parallel with the film formation surface of the film forming object 6 while rotating the rotary cathode 8.

FIG. 4B shows a more specific configuration than FIG. 4A.

Since the end block 200 is outside the chamber 10, it is necessary to seal with the atmosphere and the outside air in the vacuum chamber 10, and it demonstrates centering around the bearing and seal of a rotating part.

(Configuration on the end block side)

Between the fixed shaft 35 and the power transmission shaft 41 of the case 4, a pair of bearings B are provided, and the power transmission shaft 41 of the case 4 is fixed to the fixed shaft 35. The sealing device 270 suitable for a vacuum seal is attached to the annular gap between the fixed shaft 35 and the power transmission shaft 41 of the case 4. The sealing device 270 has a function of sealing the annular gap while allowing relative rotation between the fixed shaft 35 and the power transmission shaft 41 of the case 4. The magnet unit 3 and the fixed shaft 35 are connected, and the magnet unit 3 does not rotate even if the case 4 rotates.

A pair of bearings B is also provided between the power transmission shaft 41 of the case 4 and the power transmission shaft 21 of the target 2, and with respect to the power transmission shaft 41 of the case 4. The power transmission shaft 21 of the target 2 is rotatable, and the annular gap between the power transmission shaft 41 of the case 4 and the power transmission shaft 21 of the target 2 is sealed. It is sealed by).

Next, a bearing B is also provided between the power transmission shaft 21 of the target 2 and the circular opening 201 provided in the end block 200, so that the target 2 with respect to the end block 200. Of the power transmission shaft 21 is rotatable, and an annular gap between the power transmission shaft 21 and the opening portion 201 of the target 2 is sealed by the sealing device 270.

In addition, in the example shown, the drive force transmission shaft 21 is the structure provided in the end plate 22 which blocks the opening edge of the target 2, and the target 2 is an outer periphery by the fastening member 290, such as a clamp. The end part of the side is fastened, and the fitting part of the inner periphery of the target 2 and the end plate 22 is sealed by the gasket G. As a result, the inside of the case 4 is kept in a low pressure state.

(Configuration of Support Block 300 Side)

The driven side rotating shaft 24 of the target 2 is not hollow, is installed coaxially with the power transmission shaft 21, and is rotatable through the bearing B in the shaft hole 301 provided in the support block 300. Is supported. In particular, a sealing device is unnecessary for this bearing part. The driven side rotating shaft 24 is a structure provided in the end plate 25 which closes the opening edge of the target 2, The bearing hole 26 of unperforated is provided in the end surface of the inside of the end plate 25, and this bearing The driven side rotation shaft 44 of the case 4 is rotatably supported by the hole 26 via the bearing B. As shown in FIG. In addition, the driven shaft 44 of the case 4 is also provided with a non-penetrating bearing hole 46, and the fixed shaft 36 is coaxially fitted with the fixed shaft 35 on the driving side so as to be relatively rotatable. have.

In addition, the end portion of the support block 300 side of the target 2 is also fastened to the end portion on the outer circumferential side by a fastening member 290 such as a clamp, and the fitting portion between the inner circumference of the target 2 and the end plate is made of a gasket (G). ) And the internal space of the target 2 is kept at a low pressure state.

According to the rotary cathode 10 comprised as mentioned above, the rotational driving force of the motor 130 is transmitted to the target 2 via the belt transmission mechanism 110 and the power transmission shaft 21, and is rotationally driven.

In addition, in the case 4, the rotational driving force of the motor 130 is transmitted to the case 4 via the belt transmission mechanism 110 and the power transmission shaft 41 on the case 4 side via the electromagnetic clutch 125. Transmitted, the case 4 is driven to rotate. That is, when the electromagnetic clutch 125 is in the on state, the magnetic shield plate 5 rotates together with the case 4, and when the magnetic clutch 125 is turned off, the case 4 stops. Moreover, in the stop position, it is held by the electromagnetic brake 126 in the stop position. Thereby, this sputter | spatter process and the pre sputter | spatter process can be switched by the timing of the on-off of the electromagnetic clutch 125. FIG.

Next, the operation of the film forming apparatus 1 will be described.

The film forming apparatus 1 controls the electromagnetic clutch 125 and the electromagnetic brake 126 of the motor 130, the target driving mechanism 11, the shield member driving mechanism 12 which are driving sources by the control unit 14, The position of the magnetic shield plate 5 can be changed by rotating the magnetic shield plate 5. Thereby, the film-forming apparatus 1 switches and controls the main sputter | spatter mode which forms into a film-forming object 6, and the pre sputter | spatter mode which cleans the surface of the target 2. As shown in FIG. In other words, the film forming apparatus 1 has a switchable first operation mode corresponding to the free sputter mode and a second operation mode corresponding to the present sputter mode. Here, in the first operation mode, the magnetic shield plate 5 is disposed on the side opposite to the film formation area A0, that is, the magnet unit 3 has the magnetic shield plate 5 and the film formation area A0 ( Or it is an operation mode which discharges in the state arrange | positioned between film-forming objects 6). In the second operation mode, the magnetic shield plate 5 is disposed on the deposition area A0 side, that is, the magnetic shield plate 5 is formed of the magnet unit 3 and the deposition area A0 (or deposition). It is an operation mode in which discharge is performed in a state arranged between the objects 6).

The free sputtering mode is a step of shielding generation of the magnetic field in the first region A1 and generating a magnetic field in the second region A2 to clean the surface of the target 2. This sputtering mode shields generation of the magnetic field in the second region A2, generates a magnetic field in the first region A1, sputters the target 2, and deposits the target particles on the film forming target 6. It is a process to make it.

(Free sputter process)

In the pre-sputtering step, the motor 130 is rotated and the electromagnetic clutch 125 is turned on to drive the belt transmission mechanism 120 of the case drive mechanism 12, and together with the case 4, the magnetic shield plate. (5) is rotated and it moves to the 1st shielding position I which covers 3 A of 1st magnet units for this sputter | spatter. In the meantime, the belt transmission mechanism 110 of the target drive mechanism 11 is also driven by the motor 130, and the target continues to rotate. When the magnetic shield plate 5 reaches the first shielding position I, the electromagnetic clutch 125 is turned off, and at the same time the electromagnetic brake 126 is turned on to hold the stop position, and to apply a bias voltage from the power supply. do. When the bias voltage is applied, generation of the magnetic field of the first region A1 is shielded by the magnetic shield plate 5, and the magnetic field of the second region A2 by the second magnet unit 3B is generated. The plasma P is concentrated and generated in the vicinity of the target surface on the side of the second magnet unit 3B, the gas ions in the plasma state collide with the target 2, and oxides and the like on the target surface are scattered, thereby causing the target ( The surface of 2) is cleaned. After the sputtering is performed for a predetermined time and the surface of the target 2 is cleaned, the process proceeds to the present sputter.

(This sputter process)

In the sputtering step, the motor 130 is rotated, the electromagnetic brake 125 is released, the electromagnetic clutch 126 is turned on, and the belt transmission mechanism 120 of the case drive mechanism 12 is driven. The magnetic shield plate 5 is rotated together with the case 4 to move to the second shielding position II covering the second magnet unit 3B for free sputtering. In the meantime, the belt drive mechanism 110 of the target drive mechanism 11 is also driven by the motor 130, and the target 2 continues to rotate. When the magnetic shield plate 5 reaches the second shielding position II, the electromagnetic clutch 125 is turned off, and at the same time, the electromagnetic brake 126 holds the stop position, and the bias voltage is supplied from the power source 13. Is authorized.

When the bias potential is applied, generation of the magnetic field of the second region A2 is shielded by the magnetic shield plate 5, and the magnetic field of the first region A1 by the first magnet unit 3A is generated. The plasma P is concentrated and generated in the vicinity of the target surface on the side of the first magnet unit, the gas ions in the plasma state sputter the target 2, and the scattered sputter particles are deposited on the film forming target 6 to form the film. do.

As described above, according to the present embodiment, the magnetic shield plate 5, which is relatively light and easy to drive, is moved freely without rotating the magnet unit 3 or evacuating the rotary cathode 8. Since the sputter can be performed, the free sputter can be easily performed with good productivity.

(Other structural examples of the drive mechanism of the target and the drive mechanism of the shield plate)

5 is a schematic perspective view showing another example of the configuration of the target drive mechanism 11 and the shield plate drive mechanism 12. Basically, since it is the same as the structure shown in FIG. 4, only a different point is mainly demonstrated, the same code | symbol is attached | subjected about the same component, and description is abbreviate | omitted.

In the above configuration, the magnetic shield plate 5 is fixed to the case 4 and the magnetic shield plate 5 is rotated together with the case 4. In this example, the magnetic shield plate 5 is a case ( It is arrange | positioned in 4), and the target 2 and the case 4 are comprised so that it may rotate independently.

That is, the power transmission shaft 21 of the target 2 is a cylindrical hollow shaft, and the fixed shaft 401 of the case 4 is moved from the power transmission shaft 21 of the target 2 to the end block through the hollow hole. 200) protrudes to the side. The fixed shaft 401 of the case 4 is also a hollow shaft, and the power transmission shaft 501 of the magnetic shield plate 5 protrudes toward the end block 200 through the hollow hole. The power transmission shaft 21 of the target 2 protrudes in the center of the end plate 21 fixed to the end of the target 2, and the fixed shaft 401 of the case 4 is the case 4. It protrudes in the center of the end plate 42 of this. In addition, the power transmission shaft 501 of the magnetic shield plate 5 is connected to the center of the circular end plate 502 of the magnetic shield plate 5.

On the other hand, with respect to the support block 300 side, unlike the above-described embodiment, driven side rotation shafts 24 and 504 provided at the ends of the target 2 and the magnetic shield plate 5 rotate on the support block 300. It is possibly supported. The driven side rotating shaft 504 of the magnetic shield plate 5 does not penetrate the driven side rotating shaft 24 of the target 2, and the fixed shaft 401 of the case 4 has the magnetic shielding plate 5. The driven side rotating shaft 504 of Fig. 2) does not have to penetrate.

Next, another embodiment of the present invention will be described. In the following description, only a different point from Embodiment 1 is mainly described, and the same code | symbol is attached | subjected about the same component, and description is abbreviate | omitted.

Embodiment 2

6 shows a film forming apparatus 101 according to Embodiment 2 of the present invention. In the film forming apparatus 101 according to the second embodiment, the magnetic force of the first magnetic unit 3A of the outer side in which the magnetic force of the magnet unit 3 in the rotary cathode 8 opposes the film forming object 6, It is set stronger than the magnetic force of the 2nd magnet unit 3B on the opposite side to the film-forming object 6.

By doing in this way, the density of the plasma formed in the vicinity of the surface of the target 2 in a free sputtering mode can be made smaller than the density of the plasma formed in the vicinity of the surface of the target 2 in this sputtering mode. Therefore, according to this embodiment, in addition to the effect of Embodiment 1, excessive material consumption at the time of pre sputtering can be suppressed.

Embodiment 3

7 shows a film forming apparatus 102 according to Embodiment 3 of the present invention. In the film-forming apparatus 102 which concerns on Embodiment 3, the 1st area | region A1 for depositing the inside of the chamber 10 in the film-forming object 6, and the 2nd area | region different from 1st area | region A1 ( The partition member 400 for partitioning with A2) is provided.

The first area A1 is an area where plasma is generated during the sputtering, and the second area A2 is an area where plasma is generated during the free sputtering. The film forming apparatus 102 includes a first gas inlet 71 for introducing gas into the first region A1 and a second gas inlet 72 for introducing gas into the second region A2. Each gas introduction port 71 and 72 may be connected to the other gas supply source. Different types of gas may be supplied from the respective gas inlets 71 and 72.

The partition member includes a pair of horizontal plate portions 401 on the left and right sides of the rotary cathode and a support plate portion 402 extending in a vertical direction supporting the horizontal plate portion 401 along the horizontal plane passing through the central axis of the rotary cathode. It is comprised by the board | plate curved by one L-shape. The support plate part 402 is fixed to the inner wall surface of the chamber 10, and is comprised so that the edge part of the side of the rotary cathode 8 of the horizontal plate part 401 may face a side surface of a target through a small clearance gap. In addition, the structure in which the horizontal plate part 401 is directly fixed to the wall of the chamber 10 may be sufficient.

By dividing the first region A1 and the second region A2 in this manner, it is possible to suppress the influence of scattering particles such as oxides during pre-sputtering on the deposition target side.

[Other Embodiments]

In addition, this invention is not limited to said embodiment, A various structure can be employ | adopted in the range which does not deviate from the meaning of this invention.

For example, although the case where the magnetic shield plate was arrange | positioned with a magnet unit in the case was demonstrated, it is good also as a structure arrange | positioned in the clearance gap between a case outer periphery and a target inner periphery.

In addition, as a size of a magnetic shielding plate, although it becomes substantially cross-sectional semicircle shape in the said embodiment, and it is set to the size which covers the range of 180 degrees of a cylindrical target, it is not limited to 180 degrees. It is preferable to set it as the size which covers the range of 90 degrees or more and 270 degrees or less of a cylindrical target, and it is more preferable to set it as the size which covers the range of 150 degrees or more and 210 degrees or less.

In addition, in the said embodiment, although the magnetic shielding plate is comprised by one magnetic plate, it is good also as a structure which overlapped two sheets, and is not limited to one sheet.

Furthermore, although the magnet unit 3 arrange | positions only one 2nd magnet unit 3B for free sputter | spatters on the opposite side to 180 degrees with respect to the 1st magnet unit 3A which opposes the film-forming object 6, A plurality of second magnet units 3B for free sputtering may be provided. In this case, the 2nd magnet unit 3B provided in multiple numbers may be arrange | positioned toward another direction.

In addition, in the said embodiment, although the case where there was one rotary cathode 8 was illustrated, it is applicable also to the film-forming apparatus in which the rotary cathode 8 was arrange | positioned inside the chamber 10 in multiple numbers.

1: deposition device
2: target
3: magnet unit (magnetic field generating means)
5: magnetic shield
6: the tabernacle object
10: chamber
11: target drive device (target drive means)
12: shield plate drive device (shield plate drive means)

Claims (18)

A chamber in which the film forming object and the cylindrical target are disposed therein;
Magnetic field generating means which is provided inside the target and generates a magnetic field leaking from an outer circumferential surface of the target;
A film forming apparatus comprising target driving means for rotationally driving the target,
A magnetic shield member movable between the magnetic field generating means and the inner circumferential surface of the target;
And a shielding member driving means for driving the magnetic shielding member. The method of claim 1,
And the shielding member driving means is a means for rotating the magnetic shielding member coaxially with the target. The method according to claim 1 or 2,
The said magnetic shield member is an arc-shaped plate member, The film-forming apparatus characterized by the above-mentioned. The method according to any one of claims 1 to 3,
The said magnetic shield member is a film-forming apparatus whose cross-sectional shape orthogonal to the longitudinal direction of the said target is an arc-shaped plate-shaped member. The method according to claim 3 or 4,
The magnetic shield member is a semi-cylindrical plate member. The method according to any one of claims 1 to 5,
The magnetic shield member is made of a ferromagnetic material. The method according to any one of claims 1 to 6,
And a control means for switching between the main sputtering mode for forming a film on the film-forming object and the pre-sputtering mode for cleaning the surface of the target by moving the magnetic shielding member by the shielding member driving means. The method according to any one of claims 1 to 7,
And the magnetic field generating means is a means for generating a magnetic field in both a direction toward the deposition target and a direction away from the deposition target. The method of claim 8,
The magnetic field generating means includes a first magnet unit generating a magnetic field in a direction toward the film forming object, and a second magnet unit generating a magnetic field in a direction away from the film forming object. The method according to any one of claims 1 to 9,
And a partition member for dividing the inside of the chamber into the film forming object into a first region and a second region different from the first region. The method according to any one of claims 1 to 10,
The magnetic field generating means is housed in a case sealed inside the target, and the magnetic shield member is mounted in the case. The method according to any one of claims 1 to 11,
The film-forming apparatus which has the said magnetic field generating means and the said magnetic shield member, and the target has the cathode unit in the said chamber which is arrange | positioned so that the said magnetic field generating means and the said magnetic shield member may be arrange | positioned inside, respectively, in the said chamber. . A chamber in which the film forming object and the cylindrical target are disposed therein;
Magnetic field generating means which is provided inside the target and generates a magnetic field leaking from an outer circumferential surface of the target;
A film forming apparatus comprising target driving means for rotationally driving the target,
A magnetic shield member disposed between the magnetic field generating means and the inner circumferential surface of the target to be rotatably coaxial with the target;
And a shielding member driving means for rotationally driving the magnetic shielding member. A chamber in which the film forming object and the cylindrical target are disposed therein;
Magnetic field generating means which is provided inside the target and generates a magnetic field leaking from an outer circumferential surface of the target;
A film forming apparatus comprising target driving means for rotationally driving the target, and forming a film on the film forming object disposed in the film forming area in the chamber,
It has a magnetic shield member movably installed between the magnetic field generating means and the inner peripheral surface of the target,
A first operation mode in which the magnetic field generating means discharges while being disposed between the magnetic shield member and the film formation area;
2nd operation mode which discharges in the state in which the said magnetic shield member is arrange | positioned between the said magnetic field generating means and the said film-forming area.
The film forming apparatus, characterized by having a switchable. The method of claim 14,
And shielding member driving means for driving the magnetic shielding member,
The film forming apparatus, wherein the first operation mode and the second operation mode are switched by moving the magnetic shield member by the shield member driving means. A method of manufacturing an electronic device comprising a sputter film forming step of placing a film forming object in a chamber and depositing and depositing sputtered particles flying from a cylindrical target disposed to face the film forming object.
The magnetic field generating means disposed inside the target generates magnetic fields in both the first direction from the magnetic field generating means toward the film forming object and the second direction away from the film forming object,
A pre-sputtering step of discharging while rotating the target while shielding the magnetic field generated in the first direction;
This sputtering step of discharging while rotating the target while shielding the magnetic field generated in the second direction
It has a manufacturing method of the electronic device characterized by the above-mentioned. The method of claim 16,
The said pre-sputter process is a process which makes the outer surface of the said target clean, The manufacturing method of the electronic device characterized by the above-mentioned. The method of claim 17,
The said sputtering process is a process of sputtering the said target whose surface was clean, and depositing the said sputter | spatter particle | grains on the said film-forming object, The manufacturing method of the electronic device characterized by the above-mentioned.

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