JP7193291B2 - Film forming apparatus, film forming method, and electronic device manufacturing method - Google Patents

Description

The present invention relates to a film forming apparatus, a film forming method, and an electronic device manufacturing method.

As a film formation apparatus for forming a film on a film formation object such as a substrate, a film formation object and a film formation source are arranged to face each other, and film formation is performed while the film formation source and the film formation object are moved relative to each other. Membrane devices are known. Patent Document 1 discloses a film forming apparatus (sputtering apparatus) that emits sputtered particles (film forming material) from the target by sputtering the sputtering surface of the target and deposits the sputtered particles on a substrate to form a thin film. Are listed. In this deposition apparatus, deposition is performed by moving a cathode unit provided with a target parallel to the substrate while ejecting sputtering particles from the target. In film formation, sputtered particles are started to be emitted in a state where the cathode unit is in a region where the substrate does not face the sputtering surface (film formation standby region).

Unintended deposition of the film-forming material from the film-forming source in the film-forming standby region on the object to be film-formed reduces the uniformity of the film thickness and film quality of the film to be formed. In Patent Literature 1, a shielding plate (shielding member) is provided around the target, and the film formation standby position and the substrate are separated by a certain distance or more. This makes it difficult for the sputtering particles emitted from the target of the cathode unit at the deposition standby position to reach the substrate.

JP 2015-178682 A

However, when the distance between the target and the substrate is increased, there are problems such as an increase in the footprint (installation area) of the apparatus and an increase in the size of the vacuum equipment due to the increase in the size of the chamber. In addition, for example, since a gas such as an inert gas is introduced when performing sputtering, gas molecules exist in the atmosphere, and the sputtered particles collide with the gas molecules in the atmosphere and scatter. . Therefore, deposition materials such as sputtered particles do not necessarily fly straight, and simply increasing the distance between the target and the substrate is insufficient to suppress the sputtered particles from entering the substrate.

Therefore, in view of the above-described problems, the present invention suppresses the film-forming material released from the film-forming source in the film-forming standby area from flying to the film-forming area side, and suppresses it from adhering to the film-forming target. for the purpose.

A film-forming apparatus as one aspect of the present invention includes a film-forming target and a film-forming source that flies a film-forming material toward the film-forming target to form a film on the film-forming target. a chamber for
moving means for relatively moving the film formation source with respect to the object to be film-formed between a predetermined film-formation waiting area and a film-formation area in the chamber, wherein
a partition position for partitioning between the film formation area and the film formation standby area ; It is characterized by having a shutter member movable between an open position different in position in the first direction and a shutter member.

Further, a film forming method as another aspect of the present invention includes a preparation step of causing a film forming source to stand by in a film forming waiting area in a chamber to cause a film forming material to fly from the film forming source; moving the film forming source, in which the film forming material flies in the preparation step, from the film standby region to the film forming region in the chamber relative to the object to be film -formed; depositing a film-forming material flying from a film-forming target on the film-forming object to form a film, wherein the partition position partitions the film-forming region and the film-forming waiting region. and an open position in which the partition position and the opening position in a first direction perpendicular to the film formation surface of the film formation object are different in order to open the film formation region and the film formation standby region. In the preparatory step, the shutter member is positioned at the partition position to partition the film-forming region and the film-forming standby region, and in the film-forming step, the shutter member is positioned at the open position. and moving the film formation source from the film formation standby area to the film formation area relative to the film formation object.

Furthermore, a method for manufacturing an electronic device as another aspect of the present invention includes a preparation step of making a film forming source stand by in a film forming standby area in a chamber, and setting a state in which a film forming material flies from the film forming source. moving the film-forming source in which the film-forming material is flying in the preparation step from the film-forming standby region to the film-forming region in the chamber relative to the object to be film-formed; depositing a film-forming material flying from a film-forming source on the film-forming object to form a film, wherein the film-forming region and the film-forming standby region are separated from each other. a partition position that partitions the space, and an open position that is different in position in a first direction orthogonal to the film formation surface of the film formation target from the partition position for opening the film formation region and the film formation standby region ; a shutter member that can move between is positioned at the open position, and the film formation source is moved from the film formation standby area to the film formation area relative to the film formation object.

According to the present invention, it is possible to suppress the film-forming material discharged from the film-forming source in the film-forming standby area from flying to the film-forming area side, and to prevent the film-forming material from adhering to the film-forming object.

(A) is a schematic diagram showing the configuration of the film forming apparatus of Embodiment 1, (B) is an enlarged view of the first film formation waiting area of (A), and (C) is a schematic enlarged perspective view of the shutter member of (A). figure. 1A is a top view of FIG. 1A, and FIG. 1B is a perspective view showing a magnet unit of a rotating cathode; FIG. 2 is a schematic diagram showing the configuration of a film forming apparatus according to Embodiment 2 of the present invention; (A) and (B) are schematic diagrams showing the configuration of a film forming apparatus according to Embodiment 3 of the present invention, and (C) is a perspective view schematically showing a shutter member. (A) and (B) are schematic diagrams showing the configuration of a film forming apparatus according to Embodiment 4 of the present invention. (A) is a schematic diagram showing the configuration of a film forming apparatus according to Embodiment 5 of the present invention, and (B) is a perspective view schematically showing a driving mechanism of a shutter member. FIG. 6 is a schematic diagram showing the configuration of a film forming apparatus according to Embodiment 6 of the present invention. The figure which shows the general layer structure of an organic EL element.

Embodiments of the present invention are described in detail below. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In addition, unless otherwise specified, the scope of the present invention is limited only to the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, dimensions, materials, shapes, etc., in the following description. It's not intended.

[Embodiment 1]
First, with reference to FIGS. 1A, 1B and 2A, the basic configuration of the film forming apparatus 1 of Embodiment 1 will be described. The film forming apparatus 1 according to the present embodiment is used to manufacture various electronic devices such as semiconductor devices, magnetic devices, and electronic parts, and optical parts and the like. used for depositing thin films on (including). More specifically, the film forming apparatus 1 is preferably used in manufacturing electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Among others, the film forming apparatus 1 according to the present embodiment is particularly preferably applicable to the manufacture of organic light-emitting devices such as organic EL (ElectroLuminescence) devices and organic photoelectric conversion devices such as organic thin-film solar cells. The electronic device in the present invention includes a display device (eg, an organic EL display device) and a lighting device (eg, an organic EL lighting device) equipped with a light-emitting element, and a sensor (eg, an organic CMOS image sensor) equipped with a photoelectric conversion element. It is a thing.

FIG. 8 schematically shows a general layer structure of an organic EL element. As shown in FIG. 8, an organic EL element generally has a structure in which an anode, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer, and a cathode are formed in this order on a substrate. be. The film forming apparatus 1 according to the present embodiment is suitably used for forming a laminated film of metal, metal oxide, or the like used for an electron injection layer or an electrode (cathode) on an organic film by sputtering. In addition, it is not limited to film formation on an organic film, and lamination film formation is possible on various surfaces as long as it is a combination of materials that can be formed by sputtering, such as metal materials and oxide materials.

The film forming apparatus 1 has a chamber 10 and a driving mechanism (linear driving mechanism 12), as shown in FIG. 1(A). Inside the chamber 10 are a film-forming target 2 and a rotating cathode unit as a film-forming source for forming a film on the film-forming target 2 by causing sputtering particles, which are a film-forming material, to fly toward the film-forming target 2 . 3 (hereinafter simply referred to as “cathode unit 3”) are arranged. The drive mechanism drives at least one of the cathode unit 3 and the film-forming target 2 so that the cathode unit 3 moves relative to the film-forming target 2 . In this embodiment, a linear drive mechanism 12, which is a drive mechanism, drives the cathode unit 3. As shown in FIG. The cathode unit 3 faces the film-forming target 2 and forms a film on the film-forming target 2 by means of the linear driving mechanism 12, and the film-forming region A does not face the film-forming target 2, and the film-forming target 2 It is possible to move between the film-forming waiting area B where no film is formed. That is, in the present embodiment, the linear drive mechanism 12 is a moving means for moving the film formation source between the film formation standby region B and the film formation region A relative to the film formation object 2 . The film-forming standby area B is located at two locations, upstream and downstream, of the film-forming area A. Then, it is assumed that the film formation area A is moved to the left side in the drawing and the film is formed on the film formation object 2 . The present invention is provided with a shutter member 7 which is movable in a first direction G perpendicular to the movement direction F and partitions the film formation region A and the film formation standby region B. As shown in FIG.

The chamber 10 is connected to gas introduction means and exhaust means (not shown) so that the inside can be maintained at a predetermined pressure. That is, a sputtering gas (inert gas such as argon or reactive gas such as oxygen or nitrogen) is introduced into the chamber 10 by gas introduction means, and a vacuum pump or the like is introduced from the inside of the chamber 10. Evacuation is performed by the exhaust means, and the pressure inside the chamber 10 is adjusted to a predetermined pressure.

The film-forming object 2 is held by a holder 21 and arranged horizontally on the ceiling wall 10 d side of the chamber 10 . The film-forming object 2 is, for example, carried in through a gate valve (not shown) provided on the side wall of the chamber 10 to form a film, and is discharged from the gate valve after film formation. In the illustrated example, the film formation is performed with the film formation surface 2a of the film formation object 2 facing downward in the direction of gravity, which is a so-called deposition-up configuration, but is not limited to this. For example, the object 2 to be film-formed is arranged on the bottom side of the chamber 10, the cathode unit 3 is arranged above it, and the film-forming surface 2a of the object 2 to be film-formed faces upward in the direction of gravity. It may be a so-called deposit-down configuration. Alternatively, the film formation may be performed in a state in which the film formation target 2 is set vertically, that is, in a state in which the film formation surface of the film formation target 2 is parallel to the direction of gravity.

The cathode unit 3 has a pair of rotating cathodes 3A and 3B arranged in parallel with a predetermined gap in the moving direction. The two rotating cathodes 3A and 3B are supported at both ends by a support block 210 and an end block 220 fixed on a moving table 230, as shown in FIG. 2(A). Further, the rotating cathodes 3A and 3B have a cylindrical target 35 and a magnet unit 30 arranged therein. The target 35 is rotatably supported by the support block 210 and the end block 220, and the magnet unit 30 is fixedly supported. Although the magnet unit 30 does not rotate here, it is not limited to this, and the magnet unit 3 may also rotate or swing. The moving table 230 is movably supported along a pair of guide rails 250 via transport guides such as linear bearings in a direction parallel to the film formation surface 2a of the film formation object 2 (in this case, the horizontal direction). . In the drawing, if the direction parallel to the guide rail 250 is the X axis, the vertical direction is the Z axis, and the direction perpendicular to the guide rail 250 in the horizontal plane is the Y axis, the cathode unit 3 rotates along the Y axis. In this state, it moves in the X-axis direction in parallel to the film-forming object 2, that is, on the XY plane, while rotating about the rotation axis.

The targets 35 of the rotating cathodes 3A and 3B are cylindrical in this embodiment and function as supply sources of film-forming materials for film-forming on the film-forming object 2 . The material of the target 35 is not particularly limited, but examples thereof include simple metals such as Cu, Al, Ti, Mo, Cr, Ag, Au, and Ni, or alloys or compounds containing these metal elements. The material of the target 35 may be a transparent conductive oxide such as ITO, IZO, IWO, AZO, GZO, IGZO. In the target 35, a layer of a backing tube 35a made of another material is formed inside the layer in which these film forming materials are formed. The backing tube 35 a is electrically connected to the power source 13 and functions as a cathode to which a bias voltage is applied from the power source 13 . A bias voltage may be applied to the target itself, or there may be no backing tube. Note that the chamber 10 is grounded. In addition, although the target 35 is a cylindrical target, the term "cylindrical" as used here does not mean only a mathematically strict cylindrical shape. Including those whose vertical cross section is not a mathematically rigorous "circle". That is, the target 2 in the present invention may be any cylindrical shape that can rotate about its central axis.

The magnet unit 30 forms a magnetic field in the direction toward the film-forming object 2, and as shown in FIG. and a yoke plate 33 and a peripheral magnet 32 having a different polarity from the central magnet 31 surrounding The peripheral magnet 32 is composed of a pair of linear portions 32a and 32b extending parallel to the central magnet 31, and turning portions 32c and 32d connecting both ends of the linear portions 32a and 32b. The magnetic field formed by the magnet unit 3 has magnetic lines of force returning in a loop from the magnetic poles of the central magnet 31 toward the linear portions 32 a and 32 b of the peripheral magnets 32 . As a result, a toroidal magnetic field tunnel extending in the longitudinal direction of the target 35 is formed near the surface of the target 35 . This magnetic field traps electrons, concentrates the plasma near the surface of the target 35, and enhances sputtering efficiency.

The target 35 is rotationally driven by a target driving device 11, which is a rotational driving device. The target drive device 11 has a drive source such as a motor (not shown), and a general drive mechanism in which power is transmitted to the target 35 via a power transmission mechanism is applied. 210 or the end block 220 or the like. On the other hand, the moving table 230 is linearly driven in the X-axis direction by the linear drive mechanism 12 . As for the linear drive mechanism 12, although not particularly shown, various known linear motion mechanisms such as a screw feed mechanism using a ball screw or the like for converting the rotary motion of a rotary motor into linear motion, a linear motor, etc. can be used. can.

An atmospheric box is incorporated in the double-moving table 230, and one end of an atmospheric arm mechanism 60 configured by a link mechanism that follows linear motion is connected. The atmospheric arm mechanism 60 has a plurality of hollow arms 61 and 62 whose insides are kept at atmospheric pressure, and these arms 61 and 62 are rotatably connected to each other by a joint portion 63 . The end of one arm 61 is rotatably connected to the mounting portion of the bottom wall 10 a of the chamber 10 , and the end of the other arm 62 is rotatably connected to the mounting portion of the carriage 230 . Inside the atmospheric arm mechanism 60, there are housed power cables to be connected to the motors of the linear driving mechanism 12 and the target driving device 11, signal cables for control signals, tubes for flowing cooling water, and the like.

In the film formation standby area B, a facing member 4 is fixed to the chamber 10 so as to face the cathode unit 3 waiting in the film formation standby area B. As shown in FIG. The facing member 4 includes a horizontal plate portion 4a extending horizontally (in the XY plane) facing the cathode unit 3 at a predetermined interval, and a chamber from the end of the horizontal plate portion 4a on the side opposite to the film formation region side (on the upstream side in the moving direction). and a vertical plate portion 4b extending vertically (in the YZ plane) toward the bottom wall side of the . With the bottom wall 10a of the chamber 10 as a reference, the height of the horizontal plate portion 4a is substantially the same as that of the film-forming object 2 located in the film-forming region A. As shown in FIG. The end portion of the horizontal plate portion 4a on the film formation area A side is provided with a gap to the extent that the shutter member 7 can pass between it and the holder 21 of the object 2 to be film-formed.

In addition, on the film formation area A side of the cathode unit 3 and on the side opposite to the film formation area A, there are a first shielding member 51 and a second shielding member 52 that move with respect to the film formation object 2 together with the first cathode unit 3 . are placed. The first shielding member 51 and the second shielding member 52 are connected by a bottom plate portion 53 fixed to the moving table 230 . The height of the first shielding member 51 and the second shielding member 52 is about the height of the top of the target 35 of each cathode of the cathode unit 3 .

When the cathode unit 3 is positioned in the film formation standby area B, the second shielding member 52 is close to the vertical plate portion 4b of the opposing member 4, and the position of the first shielding member 51 is the horizontal plate portion 4a of the opposing member 4. , at substantially the same position in the X-axis direction as the end portion on the film formation region A side of . Between the horizontal plate portion 4a of the opposing member 4 and the first shielding member 51, an opening C is formed to communicate the film formation region A and the film formation waiting region B, and the opening C is closed by the shutter member 7. The film-forming region A and the film-forming standby region B are partitioned by the partition.

In the first embodiment, the shutter member 7 is a substantially rectangular plate member having long sides extending in the Y-axis direction and short sides extending in the Z-axis direction. It is assembled so as to be linearly reciprocatable in a first direction G parallel to the Z-axis. The shutter member 7 is movable between a partition position G1 that separates the film formation area A and the film formation standby area B, and an opening position G2 that opens the film formation area A and the film formation standby area B. . Here, the partition position G1 and the open position G2 are the positions of the tip 7a on the side where the shutter member 7 moves in the partition direction. In the illustrated example, the partition position G1 is reached when the tip 7a of the shutter member 7 moves toward the ceiling wall 10d of the chamber 10 and enters the gap H between the end portion of the opposing member 4 and the holder 21 of the object 2 to be film-formed. This is the position reaching the ceiling wall 10d side. In the illustrated example, the partition position G1 penetrates the gap H by a predetermined amount, but it may extend to the middle of the gap H. The open position G2 is a position where the tip 7a of the shutter member 7 has moved to the vicinity of the opposing end 5a of the first shielding member 51. As shown in FIG. As for the open position G2, the tip 7a of the shutter member 7 may pass through the gap H and reach the middle of the opening C. As shown in FIG. The shutter member 7 is configured to be movable between the partition position G1 and the open position G2, and is positioned at the partition position G1 when the film formation source is in the film formation waiting area B. As a result, the film forming source can be moved between the film forming region A and the film forming standby region B, and the film formed from the film forming source in the film forming standby region B can be removed while avoiding an increase in the size of the apparatus. It is possible to suppress the material from flying toward the film formation region A side.

The shutter member 7 is linearly reciprocated by an actuator 8 such as a pneumatic cylinder for driving. FIG. 1(C) schematically shows the actuator 8 with a two-dot chain line. For example, in the case of a pneumatic cylinder, when the compressed air is on, the pneumatic cylinder extends to move the shutter member 7 to the partition position G1. When the compressed air is off, the pneumatic cylinder contracts and moves to the open position G2. The actuator is not limited to an actuator using fluid pressure such as a pneumatic cylinder. linear drive mechanism can be utilized.

Next, a film forming method using the film forming apparatus 1 will be described. First, the cathode unit 3 is made to wait in the film-forming waiting area B. As shown in FIG. In this state, the shutter member 7 is located at the partition position G1 by the actuator 8, and the film formation area A and the film formation standby area B are partitioned by the shutter member 7. FIG. In the film-forming standby region B, prior to the film-forming process (this sputtering configuration), the cathode unit 3 is driven to apply a bias potential to the first rotating cathode 3A and the second rotating cathode 3B. As a result, each target 35 is rotated to emit sputtered particles to perform pre-sputtering (preparatory step). Pre-sputtering is preferably performed until plasma generation around each target 35 is stabilized.

In this pre-sputtering process, among the sputtered particles emitted from each target 35, the sputtered particles flying toward the ceiling wall 10d of the chamber 10 are shielded by the horizontal plate portion 4a of the facing member 4, Sputtered particles flying toward A in the moving direction are blocked by the first blocking member 51 and the shutter member 7 . Furthermore, the sputtered particles flying to the side opposite to the film forming region A are shielded by the second shielding member 52 and the vertical plate portion 4b of the opposing member 4. As shown in FIG. As described above, in the pre-sputtering process, the film-forming standby area B and the film-forming area A are separated by the shutter member 7, so that the film-forming material generated in the pre-sputtering flies to the film-forming area A, whereupon the film is formed. Adhesion to the film-forming object 2 arranged in the film region A can be suppressed.

After performing pre-sputtering for a certain period of time, the main sputtering process is started. When shifting to the main sputtering step, first, the shutter member 7 is moved from the partition position G1 to the open position G2. After that, the target 35 of the cathode unit 3 is rotationally driven to perform sputtering, and the linear driving mechanism 12 is driven to enter the film formation area A. As shown in FIG. Then, within the film-forming region A, the cathode unit 3 is moved with respect to the film-forming object 2 at a predetermined speed. During this time, the magnet unit 30 concentrates plasma in the vicinity of the surface of the target 35 facing the film-forming object 2, and the gas ions in the positive ion state in the plasma sputter the target 35, and the sputtered particles are scattered. It deposits on the film-forming object 2 . As the cathode unit 3 moves, the sputtered particles are sequentially deposited from the upstream side toward the downstream side in the moving direction of the cathode unit 3 to form a film. After passing through the film formation area A, the cathode unit 3 enters the film formation standby area B on the opposite side, stops the linear driving mechanism 12, and stops driving the cathode unit 3. As shown in FIG. Furthermore, if necessary, the shutter member 7 may be moved back and forth to perform film formation. may be provided.

Next, another embodiment of the film forming apparatus of the present invention will be described. In the following description, mainly only points different from the first embodiment will be described, and the same components will be denoted by the same reference numerals, and the description thereof will be omitted.

[Embodiment 2]
FIG. 3A shows a film forming apparatus 201 according to Embodiment 2 of the present invention. In Embodiment 2, the shutter member 7 is provided in the cathode unit 3, but in Embodiment 2, the shutter member 27 is provided on the chamber 10 side and driven from the outside of the chamber 10. ing. That is, the tip 27a in the direction in which the shutter member 27 moves to the partition position G1 is the end (lower end in the drawing) on the bottom wall 10a side of the chamber 10, and the partition position G1 is the end 51a of the first shield member 51. It is a position moved to the base end portion 51b side. In the illustrated example, the shutter member 27 passes through the ceiling wall 10d of the chamber 10 when the shutter member 27 is at the open position G2. A sufficient space may be provided between the shutter member 27 and the ceiling wall 10d so that the shutter member 27 does not penetrate through the ceiling wall 10d. may be attached, and various configurations can be adopted. An actuator 28 for driving the shutter member 27 is positioned outside the chamber 10, and a driving rod 281 is slidably inserted through a through hole penetrating the ceiling wall 10d of the chamber 10 via a sealing member. As in the first embodiment, the actuator is not limited to an actuator using fluid pressure such as a pneumatic cylinder. A variety of linear drive mechanisms are also available.

[Embodiment 3]
FIG. 4 shows a film forming apparatus 301 according to Embodiment 3 of the present invention. 4A shows the shutter member 37 in the partition position, FIG. 4B shows the shutter member 37 in the open position, and FIG. 4C is a perspective view showing the schematic structure of the shutter member. In Embodiments 1 and 2, the shutter members 7 and 27 are linearly slidable in the first direction G between the partition position G1 and the open position G2. 37 is swung in a first direction G in an arc.

That is, the shutter member 37 has a shutter body 371 and a swing arm 372 that supports the shutter body 371 , and one end of the swing arm 372 is supported by the horizontal member 4 a of the facing member 4 . The cross-sectional shape of the shutter main body 371 (the cross section of the XZ plane) is an arc shape that is a part of a circle drawn around the fulcrum O. At the partition position G1, the tip 37a located at the lower end It abuts on a position near the end of the side surface of the shielding member 51 on the film formation region A side, and the opposite end 37 b is located between the holder 21 of the film formation object 2 and the tip of the horizontal plate portion 4 a of the opposing member 4 . Positioned in the gap H, the shutter main body 371 covers the opening C (see FIG. 4A). At the open position G2, the tip 37a of the shutter main body 371 in the partition direction is separated from the first shielding member 51, and near the gap H between the holder 21 of the object to be film-formed 2 and the horizontal plate portion 4a of the opposing member 4. The opposite end 37b of the shutter body 371 is in contact with the ceiling wall 10d of the chamber 10 (see FIG. 4B). As shown in FIG. 4C, the rotary actuator 38 for rotating the shutter member 37 may be a mechanism having a rotary motion mechanism such as a motor. operatively connected to the

[Embodiment 4]
FIG. 5 shows a film forming apparatus 401 according to Embodiment 4 of the present invention. 5A shows a state in which the shutter member 47 is in the partition position, and FIG. 5B shows a state in which the shutter member 47 is in the open position. In the fourth embodiment, as in the third embodiment, the movement locus of the shutter member 47 is designed to swing in an arc between the partition position G1 and the release position G2. The difference is that the shutter member 47 is swingably supported by the cathode unit 3 .

That is, the shutter member 47 has a shutter body 471 and a swing arm 472 that supports the shutter body 471 , and one end of the swing arm 472 is rotatably supported by the first shielding member 51 . In the illustrated example, the end portion 5a of the first shielding member 51 is rotatably supported by the support shaft 473. As shown in FIG. The cross-sectional shape of the shutter main body 471 (the cross section of the XZ plane) is an arc shape which is a part of a circle drawn centering on the support shaft 473. At the partition position G1, the tip 47a located at the upper end The end 47b on the opposite side is separated from the first shielding member 51 by a predetermined distance, although it abuts on the end 4c of the horizontal plate portion 4a of the opposing member 4 on the side of the film formation area.

Therefore, at the partition position, the opening C is not completely blocked, but the lower end side is left open, and the sputtered particles generated in the film formation waiting area B flow around from the lower end side to the film formation area side. However, since the side facing the film-forming object 2 is partitioned by the shutter main body 471, the possibility that sputtered particles generated in the film-forming standby region adhere to the film-forming object 2 is reduced. (See FIG. 5(A)). At the open position G2, the tip 47a of the shutter main body 471 in the partition direction is separated from the edge 4c of the horizontal plate portion 4a on the film forming area side, and the opposite edge 47b is directed toward the bottom wall 10a of the chamber 10. It moves and comes into contact with the first shielding member 51 (see FIG. 5(B)).
The rotary actuator for rotating the shutter member 37 is not shown, but a mechanism having a rotary motion mechanism such as a motor is operatively connected to the support shaft 473 of the swing arm 472 as in the third embodiment.

[Embodiment 5]
FIG. 6 shows a film forming apparatus 501 according to Embodiment 5 of the present invention. FIG. 6A shows a state in which the shutter member 57 is in the partition position. In Embodiments 3 and 4, the shutter members 37 and 47 are configured to swing, but in Embodiment 5, the shutter member 57
is switched between the partition position G1 and the open position G2 by winding up. That is, as shown in FIG. 6B, the shutter member 57 includes a shutter main body 571 in which a large number of elongated rigid plate portions extending in the Y-axis direction are connected so as to be freely bendable in the Z-axis direction. A take-up shaft 572 is provided, and the take-up shaft 572 is fixed to the chamber 10 side. The winding shaft 572 is provided on the horizontal plate portion 4a of the opposing member 4 with respect to the gap H, and is provided in the holder 21 of the film-forming object 2 in an arc shape for guiding the shutter main body 571 during winding and rewinding. guide 573 is provided.

At the partition position G1, the shutter member 57 is unwound through the gap H and elongated, and the tip 57a thereof is located near the side surface of the first shielding member 51 on the film forming area A side. Therefore, in the fifth embodiment, as in the fourth embodiment, the opening C is not completely blocked at the partition position, but the lower end side is open.
Therefore, there is a possibility that the sputtered particles generated in the film-forming standby area will flow from the lower end side to the film-forming area side. Sputtered particles generated in the standby area B are less likely to adhere to the film-forming object 2 . At the open position G2, the tip 57a of the shutter member 57 moves to the position of the gap H and is opened. As for the rotary actuator for winding the shutter member 57 , although not shown, a mechanism having a rotary motion mechanism such as a motor is operatively connected to the winding shaft 9 .

[Embodiment 6]
FIG. 7 shows a film forming apparatus 601 according to Embodiment 6 of the present invention. In the fifth embodiment, the shutter member 57 is wound around the winding shaft 672 provided on the chamber 10 side. However, in the sixth embodiment, the shutter member 67 is provided on the cathode unit 3 side. is. That is, the winding shaft 672 is rotatably attached to the side surface of the first shielding member 51 on the film forming area A side, and the end of the shutter member 67 is connected to the winding shaft 69 . A tip 67 a on the partition side passes through the gap H and is guided to the upper surface of the horizontal plate portion 4 a of the opposing member 4 via a guide 673 . The holder 21 is provided with an arcuate guide 673 .
The opening C of the shutter body 671 is completely blocked at the partition position G1, and the tip 67a of the shutter body 671 moves to the position of the gap H and is opened at the open position G2. The rotary actuator for winding the shutter member 67 is not particularly shown, but a rotary motion mechanism such as a motor is provided on the first shielding member 51 and connected to the winding shaft 69 in the same manner as in the fifth embodiment.

[Other embodiments]
In the above-described embodiment, the cathode unit 3 has two rotating cathodes 3A and 3B, but may have three or more, or may have one. Further, instead of the cathode unit 3, a planar cathode unit having a flat target may be used. Furthermore, the present invention is not limited to a sputtering film forming apparatus, but can also be applied to a vapor deposition type film forming source that does not use sputtering.

1 film-forming device 2 film-forming object 3 rotating cathode unit (film-forming source)
7, 27, 37, 47, 57, 67 shutter member 10 chamber 12 linear drive mechanism (film formation source drive mechanism)
A film-forming region, B film-forming standby region, F movement direction, G first direction, G1 partition position, G2 open position

Claims (18)

a chamber in which a film-forming target and a film-forming source for projecting a film-forming material toward the film-forming target to form a film on the film-forming target;
moving means for relatively moving the film formation source with respect to the object to be film-formed between a predetermined film-formation waiting area and a film-formation area in the chamber, wherein
a partition position for partitioning between the film formation area and the film formation standby area ; A film forming apparatus comprising a shutter member movable between an open position different in position in a first direction and a shutter member. The film formation region is a region where the film formation source and the film formation object face each other, and the film formation standby region is a region where the film formation source and the film formation object do not face each other. The film forming apparatus according to claim 1. 3. The film-forming standby area and the film-forming area are arranged in a second direction intersecting a first direction perpendicular to the film-forming surface of the object to be film-formed. The film forming apparatus according to . The moving means moves the film formation source from the film formation standby area to the film formation area by moving the film formation source in the second direction relative to the film formation object. ,
In the film-forming region, the moving means moves the film-forming source in the second direction relative to the film-forming target, thereby forming a film on the film-forming target. 4. The film forming apparatus according to claim 3. 5. The composition according to any one of claims 1 to 4 , wherein the shutter member partitions the film formation area and the film formation standby area by partially partitioning the space in the chamber. membrane device. 6. The shutter member moves between the partition position and the open position by moving in a first direction orthogonal to a film formation surface of the film formation object. The film-forming apparatus as described in any one of 1. 7. The film forming apparatus according to claim 1, wherein the shutter member moves linearly between the partition position and the open position. 8. The film forming apparatus according to any one of claims 1 to 7 , wherein the shutter member is configured to swing about a fulcrum. The film forming apparatus according to any one of claims 1 to 8 , wherein the shutter member is configured to move by being wound up and unwound around a winding shaft. The shutter member is supported on the chamber side, and moves relative to the film formation source when the film formation source and the film formation object are moved relative to each other by the moving means. The film forming apparatus according to any one of claims 1 to 9 . The shutter member is supported on the film formation source side, and when the film formation source and the film formation target are moved relative to each other by the moving means, the shutter member moves toward the film formation target together with the film formation source. 10. The film forming apparatus according to any one of claims 1 to 9 , wherein the film forming apparatus moves relatively. 12. The film forming apparatus according to claim 1 , wherein the film forming source is a sputtering cathode. 13. The film formation source according to any one of claims 1 to 12 , wherein the film formation source has magnetic field generation means arranged at a position facing the film formation object via a target arranged in the chamber. The film forming apparatus according to . 14. The film forming apparatus according to any one of claims 1 to 13 , wherein the film forming source has magnetic field generating means arranged inside a cylindrical target arranged in the chamber. 15. The film forming apparatus according to claim 14 , further comprising a rotation driving unit that rotates the cylindrical target. 16. The film formation method according to any one of claims 12 to 15 , wherein plasma is generated around the film formation source in the film formation standby region before film formation on the film formation object. membrane device. a preparation step of making a film forming source stand by in a film forming standby area in a chamber so that a film forming material flies from the film forming source;
The film forming source, in which the film forming material is flying in the preparation step, is moved relative to the film forming object from the film forming waiting area to the film forming area in the chamber, and the film forming process is performed. a film forming step of depositing a film forming material flying from a film source on the film forming object to form a film,
a partition position for partitioning between the film formation area and the film formation standby area ; providing a shutter member movable between open positions at different positions in the first direction ;
In the preparation step, the shutter member is positioned at the partition position to partition the film formation region and the film formation standby region;
In the film-forming step, the shutter member is positioned at the open position, and the film-forming source is moved from the film-forming standby area to the film-forming area relative to the object to be film-formed. A film forming method. a preparation step of making a film forming source stand by in a film forming standby area in a chamber so that a film forming material flies from the film forming source;
The film forming source, in which the film forming material is flying in the preparation step, is moved relative to the film forming object from the film forming waiting area to the film forming area in the chamber, and the film forming process is performed. A method for manufacturing an electronic device, comprising a film forming step of depositing a film forming material flying from a film source on the film forming object to form a film,
a partition position for partitioning between the film formation area and the film formation standby area ; providing a shutter member movable between open positions at different positions in the first direction ;
In the preparation step, the shutter member is positioned at the partition position to partition the film formation region and the film formation standby region;
In the film-forming step, the shutter member is positioned at the open position, and the film-forming source is moved from the film-forming standby area to the film-forming area relative to the object to be film-formed. A method for manufacturing an electronic device.

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