JP7202815B2 - Film forming apparatus, film forming method, and electronic device manufacturing method - Google Patents

Description

The present invention relates to a film forming apparatus, a film forming method, and an electronic device manufacturing method.

A sputtering method is widely known as a method for forming a thin film made of a material such as a metal or a metal oxide on a film-forming object such as a substrate or a laminate formed on the substrate. 2. Description of the Related Art A sputtering apparatus for forming a film by a sputtering method has a structure in which a target made of a film forming material and an object to be film-formed are arranged to face each other in a vacuum chamber. When a negative voltage is applied to the target, a plasma is generated near the target, and the ionized inert gas element collides with the target surface, causing sputtered particles to be emitted from the target surface. is deposited to form a film. Also known is the magnetron sputtering method, in which a magnet is placed behind the target (inside the target in the case of a cylindrical target) and the generated magnetic field increases the electron density near the cathode for efficient sputtering. there is

As a conventional film forming apparatus of this type, for example, the apparatus described in Patent Document 1 is known. This film forming apparatus forms a film by moving the target parallel to the film forming surface of the object to be film formed. Patent Document 1 does not describe how the pressure of the sputtering gas in the chamber is detected and adjusted.

On the other hand, Patent Document 2 describes that the pressure in the chamber is measured by a vacuum gauge (pressure sensor) that is fixed to the chamber, and the pressure in the chamber is adjusted to a predetermined pressure. ing. Even when the target moves as in Patent Document 1, it is conceivable to adjust the pressure in the chamber to a predetermined pressure using a pressure sensor as in Patent Document 2.

JP 2015-172240 A JP 2005-139549 A

However, in practice, the pressure within the chamber may not be uniform. For example, the pressure in the chamber may be non-uniform such that the pressure is high near the gas inlet for introducing the sputtering gas and low near the exhaust port connected to the vacuum pump.

In a sputtering apparatus in which the cathode does not move within the chamber as in Patent Document 2, the sputtering region where sputtered particles are emitted from the surface of the target does not move within the chamber. As such, the pressure around the sputtering region remains generally constant during the sputtering process. However, when the cathode moves within the chamber, as in, for example, US Pat. Unevenness occurs in the film thickness and film quality of the film.

An object of the present invention is to provide a film forming apparatus, a film forming method, and an electronic device that can accurately obtain the pressure around the sputtering area when the sputtering area, from which sputtered particles are emitted, moves relative to the chamber. It is to provide a manufacturing method.

A film forming apparatus as one aspect of the present invention has a chamber in which a film forming object and a target are arranged, and a sputtering region in which sputter particles are generated from the target is moved within the chamber while the sputtering is performed. A film forming apparatus for depositing particles on the film forming object to form a film, comprising: a pressure sensor arranged in the chamber for acquiring information on the pressure in the chamber; and moving means for moving together with the movement of the pressure sensor, wherein the pressure sensor is a thermal conduction vacuum gauge .

Further, according to another aspect of the present invention, there is provided a film forming method in which an object to be film-formed is placed in a chamber, and sputtered particles flying from a target placed facing the film-forming object are deposited to form a film. In the film formation method including a sputtering film formation step, the sputtering film formation step is a step of performing film formation while relatively moving a sputtering region in which sputtered particles of the target are generated with respect to the chamber. In the film process, information on the pressure in the chamber is obtained by a pressure sensor, which is a thermal conduction vacuum gauge, which moves with the sputtering area of the target, and the pressure in the chamber is adjusted.

Further, according to another aspect of the present invention, there is provided a method for manufacturing an electronic device, in which an object to be film-formed is arranged in a chamber, and sputtered particles flying from a target arranged to face the object to be film-formed are deposited. An electronic device manufacturing method including a sputtering film forming step of forming a film, wherein the sputtering film forming step is a step of forming a film while moving a sputtering region of the target in which sputtered particles are generated relative to the chamber. and adjusting the pressure in the chamber by obtaining information on the pressure in the chamber by a pressure sensor, which is a thermal conductivity vacuum gauge, which moves with the sputtering area of the target in the sputtering film formation step. Characterized by

According to the present invention, when the sputtering area where sputtered particles on the target are generated moves with respect to the chamber, the pressure around the sputtering area can be accurately obtained.

1A is a schematic diagram showing the configuration of a film forming apparatus according to Embodiment 1, and FIG. 1B is a side view of FIG. (A) and (B) are schematic diagrams showing the pressure distribution and pressure regulation state in the chamber, and (C) is a perspective view showing the configuration of the magnet unit in FIG. 1 . 4 is a schematic diagram showing the configuration of a film forming apparatus according to Embodiment 2. FIG. 4 is a schematic diagram showing the configuration of a film forming apparatus according to Embodiment 3. FIG. (A) is a schematic diagram showing the configuration of the film forming apparatus of Embodiment 4, and (B) to (D) are schematic diagrams showing other aspects of the planar cathode. (A) is a schematic diagram showing the configuration of a film forming apparatus of Embodiment 5, and (B) is a side view of (A). The figure which shows the general layer structure of an organic EL element.

Embodiments of the present invention are described in detail below. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In addition, unless otherwise specified, the scope of the present invention is limited only to the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, dimensions, materials, shapes, etc., in the following description. it's not on purpose.

[Embodiment 1]
First, with reference to FIGS. 1A and 1B, the basic configuration of the film forming apparatus 1 of Embodiment 1 will be described. The film forming apparatus 1 according to the present embodiment is used to manufacture various electronic devices such as semiconductor devices, magnetic devices, electronic components, and optical components on substrates (including those on which a laminate is formed on the substrate). Used to deposit thin films. More specifically, the film forming apparatus 1 is preferably used in manufacturing electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Among others, the film forming apparatus 1 according to the present embodiment is particularly preferably applicable to the manufacture of organic light-emitting devices such as organic EL (ElectroLuminescence) devices and organic photoelectric conversion devices such as organic thin-film solar cells. The electronic device in the present invention includes a display device (eg, an organic EL display device) and a lighting device (eg, an organic EL lighting device) equipped with a light-emitting element, and a sensor (eg, an organic CMOS image sensor) equipped with a photoelectric conversion element. It is a thing.

FIG. 7 schematically shows a general layer structure of an organic EL element. As shown in FIG. 6, an organic EL element generally has a structure in which an anode, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer, and a cathode are formed in this order on a substrate. be. The film forming apparatus 1 according to the present embodiment is suitably used for forming a laminated film of metal, metal oxide, or the like used for an electron injection layer or an electrode (cathode) on an organic film by sputtering. In addition, it is not limited to film formation on an organic film, and lamination film formation is possible on various surfaces as long as it is a combination of materials that can be formed by sputtering, such as metal materials and oxide materials.

As shown in FIG. 1A, the film forming apparatus 1 includes a chamber 10 in which a film forming object 6 and a target 2 are arranged, and a film forming object 6 in the chamber 10 via the target 2. and a magnet unit 3 (magnetic field generating means) arranged at a position facing each other. In this embodiment, the target 2 is cylindrical and constitutes a rotating cathode unit 8 together with the magnet unit 3 arranged inside. In the film formation process, the rotating cathode unit 8 rotates the target 2 around its rotation center axis, along a plane parallel to the film formation surface of the film formation target 6, with respect to the rotation center axis. Move orthogonally. On the other hand, unlike the target 2, the magnet unit 3 does not rotate, and always generates a leakage magnetic field on the surface side of the target 2 facing the film-forming object 6, thereby increasing the electron density in the vicinity of the target 2 for sputtering. . The area where this leakage magnetic field is generated is the sputtering area A1 where sputtered particles are generated. As the rotary cathode unit 1 moves, the sputtering area A1 of the target 2 moves relative to the chamber 10 along the film-forming surface of the film-forming object 6, so that films are sequentially formed on the film-forming object 6. there is Although the magnet unit 3 does not rotate here, it is not limited to this, and the magnet unit 3 may also rotate or swing.

A film-forming object 6 is held by a holder 6a and horizontally arranged on the ceiling wall 10d side of the chamber 10 . The film-forming object 6 is, for example, carried in through one gate valve 17 provided on the side wall of the chamber 10 and formed into a film, and is discharged from the gate valve 18 provided on the other side wall of the chamber 10 after film formation. be. In the illustrated example, the film formation is performed with the film formation surface of the film formation object 6 facing downward in the direction of gravity, which is a so-called deposition-up configuration, but is not limited to this. For example, the film formation target 6 is arranged on the bottom side of the chamber 10, the rotary cathode 8 is arranged above it, and the film formation is performed with the film formation surface of the film formation target 6 facing upward in the direction of gravity. , a so-called deposit-down configuration may be used. Alternatively, the film formation may be performed in a state in which the film formation target 6 is set vertically, that is, in a state in which the film formation surface of the film formation target 6 is parallel to the direction of gravity.

As shown in FIG. 1(B), the rotary cathode unit 8 has a configuration in which both ends are supported by a support block 210 and an end block 220 fixed on a moving table 230, and the cylindrical target 2 is rotatable. The magnet unit 3 inside is supported in a fixed state. The moving table 230 is horizontally movably supported along a pair of guide rails 250 via a conveying guide 240 such as a linear bearing. In the figure, the direction parallel to the guide rail 250 is X
Assuming that the vertical direction is the Z-axis and the horizontal direction perpendicular to the guide rail 250 is the Y-axis, the rotary cathode unit 8 rotates about the rotation axis with its rotation axis directed in the Y-axis direction. It moves in the X-axis direction in parallel with the film-forming object 6, that is, on the XY plane.

The target 2 is rotationally driven by a target driving device 11, which is a rotational driving device. The target drive device 11 has a drive source such as a motor (not shown), and a general drive mechanism in which power is transmitted to the target 2 via a power transmission mechanism is applied. 210 or the end block 220 or the like. On the other hand, the moving table 230 is linearly driven in the Y-axis direction by the linear driving mechanism 12 . As for the linear drive mechanism 12, although not particularly shown, various known linear motion mechanisms such as a screw feed mechanism using a ball screw or the like for converting the rotary motion of a rotary motor into linear motion, a linear motor, etc. can be used. can.

The target 2 has a cylindrical shape in this embodiment and functions as a supply source of a film-forming material for forming a film on the film-forming object 6 . The material of the target 2 is not particularly limited, but examples thereof include simple metals such as Cu, Al, Ti, Mo, Cr, Ag, Au, and Ni, or alloys or compounds containing these metal elements. The material of the target 2 may be transparent conductive oxides such as ITO, IZO, IWO, AZO, GZO, and IGZO. In the target 2, a layer of a backing tube 2a made of another material is formed inside the layer in which these film forming materials are formed. A power supply 13 is connected to the backing tube 2a, and functions as a cathode to which a bias voltage is applied from the power supply 13. As shown in FIG. A bias voltage may be applied to the target itself, or there may be no backing tube. Note that the chamber 10 is grounded. Also, the target 2 is a cylindrical target, but the term "cylindrical" here does not mean only a mathematically strict cylindrical shape. Including those whose vertical cross section is not a mathematically rigorous "circle". That is, the target 2 in the present invention may be any cylindrical shape that can rotate about its central axis.

The magnet unit 3 forms a magnetic field in the direction toward the film-forming object 6. As shown in FIG. and a yoke plate 33 and a peripheral magnet 32 having a different polarity from the central magnet 31 surrounding The peripheral magnet 32 is composed of a pair of linear portions 32a and 32b extending parallel to the central magnet 31, and turning portions 32c and 32d connecting both ends of the linear portions 32a and 32b. The magnetic field formed by the magnet unit 3 has magnetic lines of force returning in a loop from the magnetic poles of the central magnet 31 toward the linear portions 32 a and 32 b of the peripheral magnets 32 . As a result, a toroidal magnetic field tunnel extending in the longitudinal direction of the target 2 is formed near the surface of the target 2 . This magnetic field traps electrons, concentrates the plasma near the surface of the target 2, and enhances the efficiency of sputtering. A region on the surface of the target 2 where the magnetic field of the magnet unit leaks is a sputtering region A1 where sputtered particles are generated.

A gas introduction means 16 and an exhaust means 15 are connected to the chamber 10 so that the inside can be maintained at a predetermined pressure. These gas introducing means 16 and exhausting means 15 constitute pressure adjusting means. That is, a sputtering gas (inert gas such as argon or reactive gas such as oxygen or nitrogen) is introduced into the chamber 10 by the gas introduction means 16 through inlets 41 and 42 provided in the chamber 10 . be. Further, the inside of the chamber 10 is evacuated through an exhaust port 5 by an exhaust means 15 such as a vacuum pump. Thereby, the pressure inside the chamber 10 is adjusted to a predetermined pressure.

The gas introduction means 16 has a plurality of introduction ports 41 and 42, and includes a supply source such as a gas cylinder (not shown), a piping system connecting the supply source and the introduction ports 41 and 42, various vacuum valves provided in the piping system, It is composed of a mass flow controller and the like, and the supply amount can be adjusted by the flow control valve of the mass flow controller. The flow control valve has an electrically controllable configuration such as a solenoid valve. Although the inlets 41, 42 are illustrated as being arranged in the vertical side walls of the chamber, they are not limited to the side walls and may be provided in the bottom wall or the ceiling wall. good. Alternatively, the pipe may extend into the chamber and the inlet may open into the chamber 10 . Also, a plurality of introduction ports 41 and 42 may be provided and arranged along the longitudinal direction of the target 2 .

The exhaust means 15 includes a vacuum pump, a piping system connecting the vacuum pump and the exhaust port 54, and an electrically controllable flow control valve such as a conductance valve provided in the piping system. It is possible. Although the exhaust port 5 is provided on the bottom wall in the illustrated example, it is not limited to the bottom wall, and may be provided on a vertical side wall or may be provided on the ceiling wall. Alternatively, the piping may extend into the chamber and the exhaust port 5 may open into the chamber 10 .

In the illustrated example, the introduction ports 41 and 42 of the gas introduction means 16 are provided on the side wall 10b on the starting end side and the side wall 10a on the end side of the movement range in which the rotary target unit 8 moves linearly, and the exhaust port 5 is provided in a straight line. It is provided on the bottom wall 10c side at the center position of the movement range. In the sputtering process, the sputtering gas is introduced from the introduction port 4 and exhausted from the exhaust port 5 to maintain a constant predetermined pressure. ), the start and end sides are relatively high, and the central portion where the exhaust port 5 is located is low. According to the present invention, the pressure sensor 7 for obtaining information on the pressure inside the chamber 10 is provided on the moving table 230 of the rotating cathode unit 8, and is moved along with the movement of the rotating cathode unit 230, so that the pressure around the sputtering area A1 can be obtained. and As the pressure sensor 7, a diaphragm vacuum gauge such as a capacitance manometer, a heat conduction vacuum gauge such as a Pirani vacuum gauge or a thermocouple vacuum gauge, and various vacuum gauges such as a crystal friction vacuum gauge can be used. As the pressure sensor 7, it is preferable to use a relatively small vacuum gauge such as a heat conduction vacuum gauge or a crystal friction vacuum gauge. The pressure sensor 7 is connected to the control unit 14 and controls the gas introduction means 16 and the exhaust means 15 constituting the pressure adjustment means based on the pressure information acquired by the pressure sensor 7 to adjust the pressure in the chamber 10. It is designed to

Next, the action of the film forming apparatus 1 will be described. In the sputtering process, the control unit 14 drives the target drive mechanism 11 to rotate the target 2, applies a bias voltage from the power source 13, drives the linear drive mechanism 12, and causes the rotary cathode unit 8 to move linearly. Move at a predetermined speed from the beginning of the movement range in the direction. When a bias potential is applied, plasma is generated intensively near the surface of the target 2 facing the film-forming object 6 by the magnet unit 3, and the target 2 is sputtered by gas ions in the positive ion state in the plasma. , the scattered sputtered particles are deposited on the film-forming object 6 . As the rotating cathode unit 8 moves, the sputtered particles are sequentially deposited from the upstream side toward the downstream side in the movement direction of the rotating cathode unit 8, thereby forming a film.

In this embodiment, gas introduction ports 41 and 42 are provided at the start and end sides of the moving path of the rotating cathode unit 8, and the exhaust port 5 is arranged on the bottom wall 10c near the center of the moving path of the rotating cathode unit 8. ing. Therefore, as shown in FIG. 2(a), the pressure inside the chamber 10 has a pressure distribution in which the pressure is high on the start and end sides of the moving path of the rotating cathode unit 8 and the pressure is low near the center. . In this embodiment, since the pressure sensor 7 is provided on the moving table 230 of the rotating cathode unit 8, the pressure sensor 7 moves with the movement of the rotating cathode unit 8, and accurately detects the pressure around the sputtered particle generating region. , and the detected value is always sent to the control unit 14 . The control unit 14 feedback-controls the flow control valve and the pressure limiting valve provided in the piping system of the gas supply means 16 and the exhaust means 15 so that the difference between the target pressure and the detected pressure becomes zero. This control amount is predetermined for the difference, and is controlled sequentially.

FIG. 2B schematically shows the control state. That is, P0(x) indicates the pressure distribution in the initial state. Let pt be the target pressure. For example, if the position of the rotating cathode unit 8 in the X-axis direction is x1 and the detected pressure is P0(x1), the difference Δ1 from the target pressure pt is (P0(x1)-(pt)). In this embodiment, when the absolute value of the difference Δ1 is equal to or less than a predetermined value, the pressure is adjusted by the exhaust means 15, and when the absolute value is greater than the predetermined value, the exhaust means 15 and the gas introduction means 16 are adjusted. to adjust the pressure. Regarding the adjustment amounts of the exhaust means 15 and the gas introduction means 16 , the relationship between the differential pressure and the adjustment amount is obtained in advance and stored in the control section 14 , and control signals are output to the exhaust means 15 and the gas introduction means 16 . Actually, there is a time lag from when the command is given until the gas pressure reaches the target pressure pt, but in FIG. Change.

Furthermore, when the rotating cathode unit 8 has advanced to x2, if the pressure based on the pressure information obtained by the pressure sensor 7 is P1(x2), the difference Δ2 from the target pressure pt is (P0(x2)-( pt)) is negative, and the absolute value is smaller than the difference Δ1. When the absolute value of this difference Δ2 is equal to or less than a predetermined value, the pressure is adjusted by the exhaust means 15, and when the absolute value is greater than the predetermined value, the pressure is adjusted by the exhaust means 15 and the gas introduction means 16. . For example, when there is a threshold between the absolute values of the difference Δ1 and the difference Δ2, the pressure is adjusted by the exhaust means 15 and the gas introduction means 16 at the position x1, and the pressure is adjusted only by the exhaust means 15 at the position x2. do. In this way, even in a chamber where the pressure distribution of the gas pressure is uneven, the pressure at the moving position of the rotating cathode 8 is detected and the difference from the target pressure is controlled to be zero. The pressure in the vicinity of the sputtering area A of the cathode unit 8 can be adjusted to be substantially uniform, and the thickness and quality of the film generated on the film-forming target 6 due to the pressure difference can be substantially uniform. .

Next, another embodiment of the present invention will be described. In the following description, only differences from the first embodiment will be mainly described, and the same components will be denoted by the same reference numerals, and the description thereof will be omitted.

[Embodiment 2]
FIG. 3 shows a film forming apparatus 101 according to Embodiment 2 of the present invention. A film forming apparatus 101 according to the second embodiment includes a plurality of pressure sensors 71 and 72 . In the illustrated example, they are arranged at two positions in front of and behind the rotating cathode unit 8 in the movement direction, and are configured to move together with the movement of the rotating cathode unit 8 . In particular, in the illustrated example, they are attached to the anti-adhesion plates 261 and 262 on the front and rear sides in the movement direction. Note that this configuration is not restrictive, and for example, the moving table 230 is extended in the movement direction of the rotating cathode unit 8 (that is, in each of the positive direction and the negative direction of the X axis), and the extension portion may be provided with pressure sensors 71 and 72, respectively.

In this embodiment, the pressure sensors 71 and 72 to be used are selected according to the traveling direction of the rotating cathode unit 8 . That is, when the rotating cathode unit 8 advances in the direction indicated by the arrow in FIG. 3, the pressure sensor 71, which is the pressure sensor in front of the traveling direction, is used. If moving in the opposite direction, pressure sensor 72 is selected. Selection of the pressure sensor used for adjusting the pressure according to the moving direction of the rotating cathode unit 8 is performed by the control section 14, and the control section 14 constitutes the selection means. In addition, since the pressure sensors 71 and 72 are located ahead of the sputtering area A of the rotating cathode unit 8 in the direction of travel, the pressure information of the area into which the sputtering area A will enter can be obtained in advance. The accuracy of pressure regulation can be improved. In addition, when there is only one traveling direction, it may be provided on one side.

[Embodiment 3]
FIG. 4 shows a film forming apparatus 102 according to Embodiment 3 of the present invention. In the film forming apparatus 102 according to the third embodiment, in addition to the pressure sensor 7 that moves together with the rotating cathode unit 8, the fixed pressure sensor 9 is arranged in the chamber 10 as a second pressure sensor that measures the pressure at a predetermined position. there is In this embodiment, the pressure sensor 7 is a thermal conduction vacuum gauge, which is a relatively small vacuum gauge, and the fixed pressure sensor 9 is a diaphragm vacuum gauge.

Preferably, the pressure sensor 7 and the fixed pressure sensor 9 are switched for use. For example, it is preferable to detect and regulate the pressure using the pressure sensor 7 during film formation, and to regulate the pressure using the fixed pressure sensor 7 during non-film formation. During film formation, the pressure is first measured by the fixed pressure sensor 9, and when the pressure inside the chamber 10 reaches a pressure range measurable by the pressure sensor 7, the control unit 14 controls the pressure sensor to be used. Switching to sensor 7 is preferred. In the third embodiment, the control unit 14 constitutes switching means for switching the pressure sensor used when adjusting the pressure between the fixed pressure sensor 9 and the pressure sensor 7 according to the pressure.

[Embodiment 4]
FIG. 5A shows a film forming apparatus 103 according to Embodiment 4 of the present invention. In the film forming apparatus 103 according to the fourth embodiment, a planar cathode unit 308 using a plate-shaped target 302 is used instead of a rotating cathode unit using a cylindrical target 302 . The planar cathode unit 308 has a target 302 arranged parallel to the object to be film-formed, and the magnet unit 3 as a magnetic field generating means is arranged on the opposite side of the object 302 to the film-formed object 6 . A backing plate 302a to which power is applied from the power supply 13 is provided on the surface of the target 302 opposite to the film-forming object 6, and is sandwiched between case plates 361 and 362 arranged in front and behind in the movement direction. are fixed together. The magnet unit 3 is fixed to the bottom plate 363 . The planar cathode unit 308 is fixed to the upper surface of the moving table 230. On the upper surface of the moving table 230, as in the second embodiment, two moving pressure sensors are provided on the front and rear sides in the moving direction of the planar cathode unit 308, respectively. 71 and 72 are arranged. That is, the moving pressure sensors 71 and 72 are positioned a predetermined distance ahead of the sputtering area A1 of the target 302 in the moving direction.

Although the moving pressure sensors 71 and 72 are arranged on the moving table 230 in the illustrated example, they may be attached to the front and rear case plates 361 and 362 . Also, this planar cathode unit 303 may be combined with the fixed pressure sensor 9 as in the third embodiment. Moreover, as shown in FIGS. 5B to 5D, the magnet unit 3 may be movable relative to the target 302 within the case 306 of the planar cathode unit 303 . By doing so, the sputtering area A1 can be relatively shifted with respect to the target 302, and the utilization efficiency of the target 302 can be improved.

[Embodiment 5]
6A and 6B show a film forming apparatus 104 according to Embodiment 5 of the present invention. 5B to 5D of Embodiment 4, the magnet unit 3 is movable relative to the target 302 in the planar cathode unit 303. In FIG. On the other hand, in the fifth embodiment, a flat plate-shaped target 402 is larger than the film-forming object 6 in both the X-axis direction and the Y-axis direction, and is fixed to the chamber 10 . Also, the magnet unit 3 as a magnetic field generating means moves with respect to the target 402 fixed to the chamber 10 (that is, with respect to the chamber 10), and forms the sputtering area A1 where the target particles of the target 402 are emitted. It is designed to be moved along the film object 6 .

The target 402 is arranged at the boundary between the vacuum region and the atmospheric pressure region, and the magnet unit 3 is placed in the atmosphere outside the chamber 10 . That is, as shown in FIG. 6A, the target 402 is arranged so as to airtightly close the opening 10c1 provided in the bottom wall 10c of the chamber 10, the target 402 faces the inner space of the chamber 10, It faces the film-forming object 6 . Here, a backing plate 402a to which power is applied from the power source 13 is provided on the surface of the target 402 opposite to the film formation object 6, and the backing plate 402a faces the external space.

The magnet unit 3 is arranged outside the chamber 10 and the pressure sensor 7 is arranged inside the chamber 10 . The magnet unit 3 is supported by a magnet unit moving device 430 outside the chamber 10 and is movable along the target 402 in the X-axis direction. The magnet unit 3 is driven by the magnet driving device 121 driving the magnet unit moving device 430 . The magnet unit moving device 430 is a device that linearly guides the magnet unit 3 in the X-axis direction, and although not shown, is composed of a moving base that supports the magnet unit 3 and a guide such as a rail that guides the moving base. . The pressure sensor 7 is supported by a sensor moving device 450 arranged inside the chamber 10 , is movable in the X-axis direction along the target 402 , and is driven by the pressure sensor driving device 122 . Similarly to the magnet unit moving device 430, the sensor moving device 450 is also composed of a moving table that supports the pressure sensor 7 and a guide such as a rail that guides the moving table. The magnet driving device 121 and the pressure sensor driving device 122 are controlled by the control device 14, and drive the pressure sensor 7 in synchronization with the movement of the magnet unit 3, thereby moving the pressure sensor 7 together with the movement of the sputtering area A1. It has become.

In this embodiment, since the target 402 is arranged on the bottom wall 10c of the chamber 10, the exhaust ports 51 and 52 are located on the front wall (side wall) 10e and the rear wall 10e of the chamber 10 as shown in FIG. 6 (B). It is provided on the wall (side wall) 10f. Moreover, the sensor moving device 450 and the pressure sensor 7 are located on both sides of the magnet unit 3 in the longitudinal direction (Y-axis direction), that is, the space between the magnet unit 3 and the inner surface of the front wall 10 e of the chamber 10 and the chamber 10 . They are arranged at two positions in the space between the inner surface of the rear wall 10f and the magnet unit 3, and detect the pressure on both sides of the magnet unit 3 in the longitudinal direction. The detected value is the average value of the two pressure sensors 7, for example, and the pressure is adjusted.

[Other embodiments]
In the above-described embodiment, the rotary cathode unit 8 and the planar cathode unit are exemplified. be. For example, in the case of the rotating cathode unit 8, it has a plurality of magnet units 3, a plurality of targets 2 are arranged corresponding to each of these magnet units 3, and a plurality of sets of targets 2 are formed by each magnet unit 3 and each target 2 corresponding to each magnet unit 3. A rotary cathode unit 8 is constructed as a unit, and a linear drive mechanism 12 moves a plurality of sets of rotary cathode units 8 together. In the case of the planar cathode unit 308, a plurality of magnet units 3 are provided, and a plurality of targets 302 are arranged corresponding to each of these magnet units 3. Each magnet unit 3 and each target 302 corresponding to each magnet unit 3 make up a plurality of sets of targets. A unitary planar cathode unit 8 is constructed and a linear drive mechanism 12 moves sets of planar cathode units 8 together.

REFERENCE SIGNS LIST 1 film deposition apparatus 2 target 6 film deposition object 7 pressure sensor 10 chamber 12 linear driving mechanism (moving means)
A1 Sputtering area

Claims (21)

Having a chamber in which the object to be film-formed and the target are arranged,
A film forming apparatus for depositing the sputtered particles on the film-forming object to form a film while moving a sputtering region in which sputtered particles are generated from the target within the chamber,
a pressure sensor disposed within the chamber to obtain information on the pressure within the chamber;
a moving means for moving the pressure sensor along with the movement of the sputtering area;
A film forming apparatus, wherein the pressure sensor is a thermal conduction vacuum gauge. further comprising pressure adjusting means for adjusting the pressure in the chamber;
2. The film forming apparatus according to claim 1, wherein the pressure adjusting means adjusts the pressure based on the pressure information acquired by the pressure sensor. 3. The film forming apparatus according to claim 2, wherein the pressure adjusting means adjusts the pressure in the chamber so that the pressure based on the pressure information acquired by the pressure sensor becomes the target pressure. The pressure adjustment means includes exhaust means and gas introduction means,
When the absolute value of the difference between the pressure based on the pressure information acquired by the pressure sensor and the target pressure is equal to or less than a predetermined value, the pressure is adjusted by the exhaust means, and when the absolute value is greater than the predetermined value. 4. The film forming apparatus according to claim 2, wherein the pressure is adjusted by said exhaust means and said gas introduction means. 5. The film forming apparatus according to claim 2, further comprising a second pressure sensor fixed to said chamber. Switching means for switching the pressure sensor used when adjusting the pressure by the pressure adjusting means according to the pressure in the chamber between the pressure sensor that moves with the movement of the sputtering region and the second pressure sensor. 6. The film forming apparatus according to claim 5, comprising: The pressure in the chamber is adjusted based on the pressure information acquired by the pressure sensor when the film is being formed on the film-forming target, and when the film is not being formed on the film-forming target. 6. The film forming apparatus according to claim 5, wherein the pressure inside the chamber is adjusted based on pressure information acquired by the second pressure sensor. 8. The film forming apparatus according to claim 5, wherein said second pressure sensor is a diaphragm vacuum gauge. 9. The film forming apparatus according to any one of claims 1 to 8, further comprising magnetic field generating means arranged in the chamber at a position facing the object to be film-formed through the target. . target drive means for moving the target relative to the chamber;
10. The film forming apparatus according to claim 1, wherein the sputtering region is moved by moving the target with respect to the chamber by the target driving means. The pressure sensor is configured to be assembled integrally with the target,
11. The film forming apparatus according to claim 1, wherein said moving means moves said target and said pressure sensor in a direction crossing the longitudinal direction of said target. 12. The film forming apparatus according to claim 1, wherein said target is cylindrical, and further comprises a rotation driving means for rotating said target. A plurality of the targets are arranged side by side in the chamber,
13. The film forming apparatus according to claim 1, wherein the moving means moves together the plurality of targets arranged. The target has a flat plate shape extending in the moving direction of the sputtering region,
the target is fixedly mounted with respect to the chamber;
10. The film forming apparatus according to claim 9, wherein said moving means moves said sputtering region by moving said magnetic field generating means with respect to said chamber. Having a chamber in which the object to be film-formed and the target are arranged,
A film forming apparatus for depositing the sputtered particles on the film-forming object to form a film while moving a sputtering region in which sputtered particles are generated from the target within the chamber,
a pressure sensor disposed within the chamber to obtain information on the pressure within the chamber;
moving means for moving the pressure sensor along with the movement of the sputtering area;
pressure adjusting means for adjusting the pressure in the chamber based on the pressure information obtained by the pressure sensor;
A plurality of the pressure sensors moved by the moving means are provided along the moving direction of the sputtering area,
A film forming apparatus, comprising a selection unit that selects a pressure sensor used when the pressure is adjusted by the pressure adjustment unit, according to a moving direction of the sputtering area. 16. The film forming apparatus according to claim 15, wherein the selection unit selects the pressure sensor arranged ahead of the sputtering area in the moving direction in accordance with the moving direction of the sputtering area. The gas introduction means has a plurality of gas introduction ports for introducing gas into the chamber,
5. The film forming apparatus according to claim 4, wherein the plurality of gas introduction ports are arranged along the longitudinal direction of the arranged target. A film formation method including a sputtering film formation step of arranging a film formation target in a chamber and depositing sputtered particles flying from a target arranged facing the film formation target to form a film,
The sputtering film formation step is a step of forming a film while moving a sputtering region of the target where sputtered particles are generated relative to the chamber,
In the sputtering film formation step, information on the pressure in the chamber is obtained by a pressure sensor, which is a thermal conduction vacuum gauge, which moves with the sputtering area of the target, and the pressure in the chamber is adjusted. Deposition method. A method for manufacturing an electronic device, comprising: a sputtering film forming step of arranging a film-forming object in a chamber and depositing sputtered particles flying from a target arranged facing the film-forming object to form a film; ,
The sputtering film formation step is a step of forming a film while moving a sputtering region of the target where sputtered particles are generated relative to the chamber,
In the sputtering film formation step, information on the pressure in the chamber is obtained by a pressure sensor, which is a thermal conduction vacuum gauge, which moves with the sputtering area of the target, and the pressure in the chamber is adjusted. A method of manufacturing an electronic device. A film formation method including a sputtering film formation step of arranging a film formation target in a chamber and depositing sputtered particles flying from a target arranged facing the film formation target to form a film,
The sputtering film formation step is a step of forming a film while moving a sputtering region of the target where sputtered particles are generated relative to the chamber,
In the sputtering film formation step, a pressure sensor that moves with the sputtering area of the target is adjusted according to the moving direction of the sputtering area among a plurality of pressure sensors arranged along the moving direction of the sputtering area. A film formation method, comprising: selecting a pressure sensor to be used at the time of film formation; obtaining information on the pressure in the chamber by the selected pressure sensor; and adjusting the pressure in the chamber. A method for manufacturing an electronic device, comprising: a sputtering film forming step of arranging a film-forming object in a chamber and depositing sputtered particles flying from a target arranged facing the film-forming object to form a film; ,
The sputtering film formation step is a step of forming a film while moving a sputtering region of the target where sputtered particles are generated relative to the chamber,
In the sputtering film formation step, a pressure sensor that moves with the sputtering area of the target is adjusted according to the moving direction of the sputtering area among a plurality of pressure sensors arranged along the moving direction of the sputtering area. A method of manufacturing an electronic device, comprising: selecting a pressure sensor to be used at the time; obtaining information on the pressure in the chamber by the selected pressure sensor; and adjusting the pressure in the chamber.

Images