JP2020019989A - Film deposition device, and electronic device manufacturing method - Google Patents

Abstract

To provide a film deposition device capable of simply realizing pre-sputtering at sufficient productivity, and an electronic device manufacturing method.SOLUTION: A film deposition device 1 comprises a chamber 10, inside which a film deposition object 6 and a cylindrical target 2 are arranged, magnetic field generation means 3 provided inside the target 2 and generating a stray magnetic field leaked from an outer periphery of the target 2, and target driving means 11 for rotary driving the target 2. The magnetic field generation means 3 generates a first stray magnetic field M1 leaked from a first region A1 on an outer surface of the target 2 opposed to the film deposition object of the target 2, and a second stray magnetic field M2 leaked from a second region A2 on the outer surface of the target 2 not opposed to the film deposition object 6 of the target 2. Strength of the second stray magnetic field M2 is lower than that of the first stray magnetic field M1.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a film forming apparatus and an electronic device manufacturing method.

  2. Description of the Related Art Sputtering is widely known as a method for forming a thin film made of a material such as a metal or a metal oxide on a film formation target such as a substrate or a laminate formed on the substrate. 2. Description of the Related Art A sputtering apparatus that forms a film by a sputtering method has a configuration in which a target made of a film-forming material and a film-forming target are arranged to face each other in a vacuum chamber. When a negative voltage is applied to the target, plasma is generated in the vicinity of the target, the target surface is sputtered by the ionized inert gas element, and the emitted sputtered particles are deposited on the film-forming target to form a film. There is also known a magnetron sputtering method in which a magnet is disposed on the back of the target (in the case of a cylindrical target, inside the target), and the generated magnetic field increases the electron density near the cathode to perform sputtering.

  In this type of conventional film forming apparatus, for example, after replacing the target, after opening the chamber to the atmosphere, or when the target is not exposed to plasma for a long time without performing the film forming process continuously, etc. In some cases, the surface of the target may be oxidized or deteriorated. In the case where the surface of the target is oxidized or deteriorated in this way, or when a foreign substance adheres to the target surface, etc., the sputtering is performed on a material other than the film formation target before sputtering the film formation target, Pre-sputtering for cleaning the surface of a target has been performed (Patent Document 1).

As a pre-sputtering method for a rotary cathode (RC; also referred to as a rotating cathode or a rotatable cathode) that performs sputtering while rotating a target, for example, there is a method described in Patent Document 2. In the sputtering apparatus described in Patent Document 2, the following three states can be taken by rotating a magnet (magnet assembly) provided inside the RC.
(1) The state where the plasma is facing the opposite side of the substrate (film formation target) (2) The state where the plasma is facing sideways (the direction horizontal to the film formation surface of the substrate) (3) The plasma is facing the substrate State

  That is, by generating plasma in the state (1) and maintaining the state in the state (1) or (2), pre-sputtering can be performed without sputtering the substrate. After completion of the pre-sputtering, if the magnet is rotated to the state (3), it is possible to shift from the pre-sputtering to the main sputtering without moving the substrate or the RC.

JP-A-2006-204705 JP-T-2015-519777

  However, in the method of rotating the magnet as described in Patent Literature 2, when the film-forming target becomes large and the RC becomes long, the magnet becomes heavy and it is difficult to rotate.

In addition, even if pre-sputtering is performed, there is a possibility that the state of the target surface changes while the magnet assembly is half-turned before the main sputtering.
As another method, a method in which the entire RC is moved to a position for pre-sputtering to perform pre-sputtering is also conceivable. However, the moving distance becomes long and productivity is reduced.

  An object of the present invention is to provide a film forming apparatus and a method for manufacturing an electronic device that can easily perform pre-sputtering with good productivity.

  A film forming apparatus according to one aspect of the present invention includes a chamber in which a film formation target and a cylindrical target are disposed, and a leakage magnetic field provided inside the target and leaking from an outer peripheral surface of the target. A film-forming apparatus, comprising: a magnetic field generating unit that performs rotation of the target; and a target driving unit that rotationally drives the target. Is a first leakage magnetic field leaking from a first region of the outer surface of the target facing the film formation target of the target, and does not face the film formation target of the target on the outer surface of the target. Means for generating a second leakage magnetic field leaking from a second region, wherein the intensity of the second leakage magnetic field is lower than the intensity of the first leakage magnetic field.

  A film forming apparatus according to another aspect of the present invention includes a chamber in which a film forming target and a cylindrical target are disposed, and a leakage magnetic field provided inside the target and leaking from an outer peripheral surface of the target. A magnetic field generating means for generating a magnetic field, and a target driving means for rotating and driving the target, a film forming apparatus for forming a film on the film forming object disposed to face the target, wherein the target In a cross section perpendicular to the longitudinal direction, a point on the outer periphery of the target, which is the point at which the distance from the object to be filmed becomes shortest when the object is disposed to face the object to be filmed. A straight line connecting the first point and a point on the rotation axis of the target is a first straight line, and a straight line passing through a point on the rotation axis of the target and perpendicular to the first straight line is a second straight line. As a straight line When the target is divided by a plane including the second straight line and parallel to a longitudinal direction of the target, a portion including the first point is defined as a first portion, and the other is defined as a second portion. The magnetic field generating means generates a first stray magnetic field leaking from an outer surface of the first portion of the target and a second stray magnetic field leaking from an outer surface of the second portion of the target. Means for causing the intensity of the second leakage magnetic field to be lower than the intensity of the first leakage magnetic field.

  According to still another aspect of the present invention, there is provided a film forming apparatus including: a chamber in which a film forming target and a cylindrical target are disposed; and a leakage provided inside the target and leaking from an outer peripheral surface of the target. A film forming apparatus comprising: a magnetic field generating unit configured to generate a magnetic field; and a target driving unit configured to rotationally drive the target, and a film forming apparatus configured to form a film on the film forming object arranged to face the target, Inside the chamber, there is provided a first space for performing sputtering for forming a film on the film-forming target, and a second space for performing sputtering for cleaning the outer surface of the target, The magnetic field generating means includes a first leakage magnetic field that leaks from the outer surface of the target on the first space side and a second leakage magnetic field that leaks from the outer surface of the target on the second space side. A means for generating a magnetic field, the strength of the second leakage magnetic field, and wherein the lower than the strength of the first leakage magnetic field.

According to still another aspect of the present invention, there is provided a method of manufacturing an electronic device, comprising: placing a film formation target in a chamber; and sputtering from a cylindrical target disposed opposite to the film formation target. What is claimed is: 1. A method for manufacturing an electronic device, comprising: a sputter deposition step of depositing particles to form a film, wherein a first direction from the target to the film formation target is provided by a magnetic field generating unit disposed inside the target. And a second direction away from the film formation target;
In both cases, a leakage magnetic field leaking from the outer surface of the target is generated, and the intensity of the leakage magnetic field in the second direction is lower than the intensity of the leakage magnetic field in the first direction. The present invention is characterized by comprising a main sputtering step of performing sputtering by concentrating plasma by a magnetic field, and a pre-sputtering step of performing sputtering by concentrating plasma by a leakage magnetic field in the second direction.

  According to the present invention, pre-sputtering can be performed easily with good productivity.

1A is a schematic diagram illustrating a configuration of a film forming apparatus according to a first embodiment, and FIG. 2B is a side view of the film forming apparatus according to the first embodiment. (A) is a perspective view of a magnetic plate, (B) is a perspective view of a first magnet unit. FIG. 3A is a perspective view illustrating an example of a target driving mechanism, and FIG. 3B is a cross-sectional view illustrating an example of the target driving mechanism. FIG. 3 is a schematic diagram illustrating a configuration of a film forming apparatus according to a second embodiment. (A) is a schematic diagram showing a configuration of a film forming apparatus of Embodiment 3, (B) is a perspective view of a partition plate of Embodiment 3. FIG. 9 is a schematic diagram illustrating a configuration of a film forming apparatus according to a fourth embodiment. FIG. 3 is a diagram showing a general layer configuration of an organic EL element.

  Hereinafter, embodiments of the present invention will be described in detail. However, the following embodiments merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like limit the scope of the present invention to only these, unless otherwise specified. It is not intended.

[Embodiment 1]
First, a basic configuration of the film forming apparatus 1 according to the first embodiment will be described with reference to FIG.

  The film forming apparatus 1 according to the present embodiment is used for manufacturing various electronic devices such as a semiconductor device, a magnetic device, and an electronic component, and an optical component on a substrate (including a substrate on which a laminate is formed). Used to deposit thin films. More specifically, the film forming apparatus 1 is preferably used in the manufacture of an electronic device such as a light emitting element, a photoelectric conversion element, and a touch panel. Above all, the film forming apparatus 1 according to the present embodiment is particularly preferably applicable to the manufacture of an organic light emitting element such as an organic EL (Electro Luminescence) element and an organic photoelectric conversion element such as an organic thin film solar cell. Note that the electronic device in the present invention includes a display device (for example, an organic EL display device) and a lighting device (for example, an organic EL lighting device) including a light emitting element, and a sensor (for example, an organic CMOS image sensor) including a photoelectric conversion element. It is a thing.

  FIG. 7 schematically shows a general layer configuration of the organic EL element. As shown in FIG. 7, a courage EL device generally has a structure in which an anode, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer, and a cathode are formed in this order on a substrate. is there. The film forming apparatus 1 according to the present embodiment is suitably used when a laminated film of a metal or a metal oxide used for an electron injection layer or an electrode (cathode) is formed on an organic film by sputtering. Further, the present invention is not limited to film formation on an organic film, and a stacked film can be formed on various surfaces as long as a combination of materials which can be formed by sputtering such as a metal material and an oxide material is used.

The film forming apparatus 1 has a gas inlet (supply port) 7a and an exhaust port (not shown), and has a chamber 10 capable of maintaining the inside at a vacuum. Inside the chamber 10, a gas inlet 7a is provided.
An inert gas such as argon or a reactive gas is supplied by a gas introducing means (not shown) through the unit 1. Here, the gas inlet 7 a is provided at the tip of a gas pipe 7 arranged inside the chamber 10. The inside of the chamber 10 is evacuated by an exhaust unit (not shown) through an exhaust port (not shown).

  In the chamber 10, a film-forming target 6 to be subjected to a film-forming process by the film-forming apparatus 1 and a cylindrical target 2 facing the film-forming target 6 are arranged. In a state where the target 2 is placed in the chamber 10, the film formation target 6 is transferred to a film formation area which is a region in the chamber 10 facing the target 2 by a transfer unit (not shown), and a film formation process is performed. You may. The film formation target 6 may be subjected to a film formation process while being moved by a film formation target drive unit (not shown) in a direction parallel to the film formation surface of the film formation target 6 in the film formation area. . Inside the target 2, a magnet unit 3 as a magnetic field generating means is provided. The target 2 is rotationally driven by a target driving device 11 as a driving unit, with the cylindrical central axis of the target 2 as the axis of rotation. The magnet unit 3 is mounted in a closed case 4 and forms a rotary cathode 8 together with the target 2.

  The target 2 functions as a supply source of a film formation material for forming a film on the film formation target 6. The material of the target 2 is not particularly limited, and examples thereof include a metal target such as Cu, Al, Ti, Mo, Cr, Ag, Au, and Ni and an alloy material thereof. The target 2 may have a layer made of another material such as a backing tube formed inside the layer on which these film forming materials are formed. Although the target 2 is a cylindrical target, the “cylindrical shape” referred to here does not mean only a mathematically exact cylindrical shape, and the generatrix is not a straight line but a curved line. This includes those whose vertical cross section is not a mathematically exact "circle". That is, the target 2 in the present invention may be a cylindrical target that can rotate around the central axis.

  The magnet unit 3 is a magnetic field generating unit that generates a leakage magnetic field leaking from the outer surface of the target 2. The magnet unit 3 includes a first leakage magnetic field M1 leaking from the first region A1 facing the film formation target 6 on the outer surface of the target 2 and a first leakage magnetic field M1 not facing the film formation target 6 on the outer surface of the target 2. And a second leakage magnetic field M2 leaking from the second region A2. That is, the first leakage magnetic field M1 is generated by the magnet unit 3 in the first space S1, which is a space between the target 2 and the film formation target 6, in a direction away from the outer surface of the target 2, and A second leakage magnetic field M2 is generated in the second space S2 in a direction away from the film formation target 6. Here, the first space S1 is a space for performing sputtering for forming a film on the film formation target 6, and the second space S2 is for cleaning an outer surface of the target as described later. This is the space where sputtering is performed. The second space S2 is a space between the bottom surface of the chamber and the target 2 in the illustrated example. Due to the first and second leakage magnetic fields M1 and M2, the plasmas P1 and P2 are concentrated near the outer periphery of the target 2, and sputtering is performed efficiently. Note that the first space S1 faces the first area A1, and the second space S2 faces the second area A2.

The arrangement of the first magnet unit 3A and the second magnet unit 3B can be expressed as follows. In a cross section perpendicular to the longitudinal direction of the target 2, a point on the outer periphery of the target 2, which is the point at which the distance from the film formation target 6 becomes the shortest when placed opposite to the film formation target 6. Let it be the first point X1. In the same cross section, a straight line connecting the first point X1 and the point n on the rotation axis of the target 2 is defined as a first straight line L1. Further, in the same cross section, a straight line passing through the point n on the rotation axis of the target 2 and perpendicular to the first straight line L1 is defined as a second straight line L2. At this time, the target 2 is divided into two parts by a plane including the second straight line L2 and parallel to the longitudinal direction of the target 2. These two parts are referred to as a first part and a second part. In the case of FIG. 1A, the first point X1 is a point located at the top of the outer periphery of the target 2, and the first straight line L1 passes through the first point X1 and is perpendicular to the film formation target 6. The second straight line L2 is a straight line that passes through the center (point n) of the target 2 and is parallel to the film formation target 6. Therefore, in the case of FIG. 1A, the target 2 is divided into a semicircle (semicircle) on the film formation target 6 side and a semicircle (semicircle) on the opposite side. At this time, the first magnet unit 3A generates a first leakage magnetic field M1 leaking from at least a part of the outer surface of the first portion, and the second magnet unit 3B generates at least an outer surface of the second portion. It is arranged to generate a second leakage magnetic field M2 leaking from a part.

  Inside the target 2, between the inner periphery of the target 2 and the magnet unit 3, there is disposed a magnetic plate 5 for reducing the strength of the leakage magnetic field generated by the magnet unit 3 and leaking to the outer surface of the target 2. I have. In the present embodiment, the magnetic plate 5 has a function of making the intensity of the second leakage magnetic field M2 weaker than the intensity of the first leakage magnetic field M1. Thereby, the density of the plasma P2 near the target 2 in the second space S2 is made lower than the density of the plasma P1 near the target 2 in the first space S1, and the discharge in the second space S2 is reduced to the first. Can be made weaker than the discharge in the space S1.

  As shown in FIG. 2A, the shape of the magnetic plate 5 is an arch-shaped plate-like member along the inner periphery of the cylindrical case 4, and is fixed to the inner periphery of the case 4. In the illustrated example, the magnetic plate 5 is configured to cover a half circumference of the case 4 and has a semi-cylindrical shape. The magnetic plate 5 may be fixed to the inner periphery of the case 4 or fixed with a fastening member such as a screw. In some cases, the material of the case 4 itself is made of a magnetic member for a corresponding portion. May be.

  The material of the magnetic plate 5 is not particularly limited as long as it absorbs magnetic flux and easily concentrates inside, that is, a material having a high relative magnetic permeability. The relative magnetic permeability of the material constituting the magnetic shielding plate 5 is preferably 500 or more, more preferably 1000 or more, and even more preferably 3000 or more. The upper limit of the relative magnetic permeability of the material forming the magnetic shielding plate 5 is not particularly limited, and may be, for example, 100,000,000 or less, or 1,000,000 or less. More specifically, the material forming the magnetic shielding plate 5 is preferably a ferromagnetic material. For example, Fe, Co, Ni, an alloy thereof, permalloy, mu metal, or the like can be used.

  A power supply 13 for applying a bias voltage is connected to the target 2, and the control device 14 controls the target driving device 11 and the power supply 13. The chamber 10 is grounded. That is, by applying the power to the power source 13 while rotating the target 2, the plasma is applied to the first space S <b> 1 on the object 6 and the second space S <b> 2 on the opposite side (back side) of the object 6. The pre-sputtering is performed by generating a weak discharge on the back side. At the same time, high-density plasma is generated in the first space S1 to perform main sputtering, and sputter particles are deposited on the film-forming target 6 to form a film.

As shown in FIG. 1B, in the illustrated example, the film formation target 6 is arranged on the ceiling side of the vacuum chamber 10 in parallel with the rotation axis of the rotary cathode 8, that is, horizontally, and both side edges are formed on the substrate holder. Is held by The film formation target 6 is carried in, for example, from an entrance gate (not shown) provided on the side wall of the chamber 10, moves to a film formation position in a film formation area, and forms a film. Exhausted from the gate. As described above, the film forming apparatus 1 may have a so-called deposit-up configuration in which film formation is performed with the film formation surface of the film formation target 6 facing downward in the direction of gravity. However, the present invention is not limited to this. The film-forming target 6 is disposed on the bottom side of the chamber 10 and the rotary cathode 8 is disposed above the same, and the film-forming surface of the film-forming target 6 faces upward in the direction of gravity. A so-called deposit-down configuration in which film formation is performed in a state may be employed. Or,
The film formation target 6 may be configured to be vertically set, that is, the film formation may be performed in a state where the film formation surface of the film formation target 6 is parallel to the direction of gravity.

The rotary cathode 8 is disposed substantially at the center in the vertical direction of the chamber 10, and both ends are rotatably supported via a support block 300 and an end block 200. As shown in FIG. 1 (A), gas pipes 7 are provided at two locations on the left and right of the rotary cathode 8 in the figure, and extend upward from the bottom side of the chamber 10. The position (gas supply position) of the gas inlet 7a, which is the opening of the gas pipe 7 in the chamber 10, is set at the center axis N of the rotary cathode 8.
At the height of the target 2, it bends toward the left and right side surfaces of the cylindrical target 2, and opens facing the left and right side surfaces of the target 2.

The position of the gas inlet 7a is not particularly limited, but is preferably between the first space S1 and the second space S2. That is, it is preferable that the position of the gas inlet 7 a be perpendicular to the normal line of the film formation target surface of the film formation target 6 and near a plane including the rotation axis of the target 2. Thus, gas can be supplied from one gas inlet 7a to both the first space S1 and the second space S2.

(Arrangement configuration of magnet unit 3)
The magnet unit 3 includes a first magnet unit 3A that forms a magnetic field in a direction toward the film formation target 6 (first direction D1), and a magnetic field in a second direction D2 that is a direction away from the film formation target 2. Are formed by a second magnet unit 3B that forms In the present embodiment, the first direction D1 and the second direction D2 are opposite by 180 °, that is, the angle between the first direction D1 and the second direction D2 is 180 °, but the present invention is not limited thereto. Not done. The angle formed by the first direction D1 and the second direction D2 may be 90 ° or more and 180 ° or less, and is preferably 120 ° or more and 180 ° or less. The first magnet unit 3A and the second magnet unit 3B are overlapped back to back, and the strength of the magnetic force is set to be the same. Note that a space may be provided between the first magnet unit 3A and the second magnet unit 3B. The first magnet unit 3A and the second magnet unit 3B have basically the same configuration, and the configuration will be described using the first magnet unit 3A as an example.

  As shown in FIG. 2B, the first magnet unit 3A includes a central magnet 31 extending in a direction parallel to the rotation axis of the rotary cathode 8, a peripheral magnet 32 having a different polarity from the central magnet 31 surrounding the central magnet 31. , And a yoke plate 33. The peripheral magnet 32 includes a pair of linear portions 32a and 32b extending parallel to the center magnet 31, and turning portions 32c and 32c connecting both ends of the linear portions 32a and 32b. The second magnet unit 3B has the same configuration.

  The magnetic field formed by the magnet unit 3 has magnetic lines of force that return from the magnetic poles of the center magnet 31 to the linear portions 32a of the peripheral magnet 32 in a loop. Thus, a tunnel of a toroidal magnetic field extending in the longitudinal direction of the target 2 is formed near the surface of the target 2. The magnetic field captures electrons, concentrates plasma near the surface of the target 2, and enhances the efficiency of sputtering.

(Case configuration)
The case 4 is a closed box having a cylindrical shape, and the magnet unit 3 is arranged in the case 4. The central axis of the case 4 and the central axis of the target are assembled coaxially with the central axis N of the rotary cathode 8. The yoke plate 33 of the magnet unit 3 is located on a horizontal plane passing through the center axis N, and a vertical plane passing through the centers of the center magnets 31 of the first magnet unit 3A and the second magnet unit 3B defines the center axis. It is arranged to pass.

(Target drive mechanism)
FIG. 3A is a schematic perspective view illustrating an example of the target driving mechanism 11, and FIG. 3B is a cross-sectional view along the rotation axis of the rotary cathode 8. FIG. 3A mainly illustrates a basic configuration of the rotary cathode 8, and FIG. 3B mainly illustrates an arrangement configuration of a rotary bearing and a seal.

  First, the target driving mechanism 11 will be described with reference to FIG. A power transmission shaft 21 for transmitting power to the target 2 is a cylindrical hollow shaft protruding from the end block 200, and the fixed shaft 41 of the case 4 is moved from the power transmission shaft 21 of the target 2 through a hollow hole of the power transmission shaft 21. It is protruding. The power transmission shaft 21 of the target 2 projects from the center of an end plate 22 fixed to the end of the target 2, and the fixed shaft 41 of the case 4 projects from the center of an end plate 42 of the case 4. .

  The power transmission shaft 21 of the target 2 is connected to a motor 130 as a drive source via a belt transmission mechanism 110 as a drive transmission mechanism, so that a rotational driving force is transmitted. That is, the rotational driving force of the motor 130 is transmitted to the target 2 via the belt transmission mechanism 110 and the power transmission shaft 21, and the target 2 is rotationally driven. In the illustrated example, the belt transmission mechanism 110 uses a toothed type belt and pulley, but is not limited thereto.

  On the other hand, at the end of the support block, a driven rotation shaft 24 provided at the end of the target 2 is rotatably supported by the support block 300. Unlike the end block side, it is only necessary to be supported so as to be rotatable with respect to each other, so that the fixed shaft 44 of the case 4 does not have to penetrate the driven side rotating shaft 24 of the target 2.

  Next, with reference to FIG. 3B, description will be made focusing on a bearing and a seal of a rotating part.

(Configuration on the end block side)
A pair of bearings B is provided between the fixed shaft 41 and the power transmission shaft 21 of the target 2, and the power transmission shaft 21 of the target 2 is rotatable with respect to the fixed shaft 41. A sealing device 270 suitable for vacuum sealing is mounted in the annular gap between the target 2 and the power transmission shaft 21. The sealing device 270 has a function of sealing the annular gap while enabling relative rotation between the fixed shaft 41 and the power transmission shaft 21 of the target 2. Further, the case 4 and the magnet unit 3 are connected, and even if the target 2 rotates, the case 4 and the internal magnet unit 3 do not rotate. That is, the film forming apparatus 1 can rotate the target 2 while the case 4 and the internal magnet unit 3 are fixed to the end block 200.

  Further, a bearing B is provided between the power transmission shaft 21 of the target 2 and the circular opening 201 provided in the end block 200, and the power transmission shaft 21 of the target 2 can rotate with respect to the end block 200. Further, the annular gap between the power transmission shaft 21 of the target 2 and the opening 201 is sealed by the sealing device 270. In the illustrated example, the driving force transmission shaft 21 is provided on an end plate 22 that closes the open end of the target 2, and the target 2 is fastened at its outer peripheral end by a fastening member 290 such as a clamp. A fitting portion between the inner periphery of the target 2 and the end plate 22 is sealed by a gasket G. Thereby, the inside of the case 4 is maintained in a low pressure state.

(Configuration on the support block 300 side)
The driven side rotation shaft 24 of the target 2 is not hollow, but is provided coaxially with the power transmission shaft 21, and is rotatably supported via a bearing B in a shaft hole 301 provided in the support block 300. This bearing does not require a sealing device.

  The driven-side rotary shaft 24 is provided on an end plate 25 for closing the open end of the target 2, and an unpenetrated bearing hole 26 is provided on an inner end face of the end plate 25. A fixed shaft 44 of the case 4 is rotatably supported via a bearing B. The end of the target 2 on the support block 300 side is also fastened to the outer end by a fastening member 290 such as a clamp, and the fitting portion between the inner periphery of the target 2 and the end plate is sealed by a gasket G. , The internal space of the target 100 is maintained at a low pressure.

  Here, the support block 300 is arranged inside the chamber 10 and the end block 200 is arranged outside the chamber 10. However, the present invention is not limited to this, and the end block 200 is also arranged inside the chamber 10. May be done. In this case, the motor 130 and the like may be arranged inside the end block 200. The end block 200 and the support block 300 may be arranged inside the chamber 10 so that the end block 200 and the support block 300 can move together with the rotary cathode 8 in parallel with the film formation surface of the film formation target 6. With this configuration, the rotary cathode 8 can be driven in parallel to the film formation surface of the film formation target 6 while the rotary cathode 8 is rotationally driven.

  Next, the operation of the film forming apparatus 1 will be described.

  In the film forming apparatus 1, the control unit 14 controls the motor 130 as a driving source and the target driving mechanism 11, and rotates the target 2 to form a film on the film formation target 6. When a bias voltage is applied to the target 2 from the power supply 13 while rotating the target 2, plasma is generated in a space outside the target 2 due to a stray magnetic field generated by the magnet unit 3. More specifically, high-density plasma P1 is generated in the first space S1 on the side of the film formation target 6 by the first leakage magnetic field M1 having a high magnetic force, and the second space S1 on the opposite side to the film formation target 6 is formed. In the space S2, a low-density plasma P2 is generated by the second leakage magnetic field M2 having a low magnetic force.

  A portion of the outer surface of the target 2 corresponding to the second region A2 is subjected to sputtering of the target 2 by charged particles of the low-density plasma P2 in the second space S2 to clean the surface (pre-sputtering). Since the target 2 is rotationally driven, a portion of the outer surface of the target 2 that is cleaned by pre-sputtering moves on the outer surface of the target 2. That is, by performing pre-sputtering while rotating the target 2, it is possible to clean the entire outer surface of the target 2. The portion of the outer surface of the target 2 that has been cleaned by pre-sputtering is sent to the first area A1 by rotation. In the first region A1, a clean target surface is sputtered by charged particles of the high-density plasma P1 in the first space S1 (main sputtering). As a result, sputtered particles with reduced impurities are deposited on the film formation target 6, and a uniform film is formed.

  Note that the main sputtering and the pre-sputtering may be sequentially performed at intervals in time, may be continuously performed sequentially, or may be simultaneously performed. In the present embodiment, the main sputtering and the pre-sputter are performed simultaneously. By performing the main sputtering immediately on the surface of the target 2 cleaned in the second region A2 by, for example, simultaneously performing the main sputtering and the pre-sputtering, the target is removed in the first region A1 where the main sputtering is performed. 2 can be kept clean at all times. Thus, a highly pure and uniform film formation layer can be obtained.

In the present embodiment, pre-sputtering is performed in the second space S2 in a direction away from the film formation target 6. That is, presputtering is performed by sputtering a portion of the outer surface of the target 2 that is not opposed to the film formation target 6. Thereby, the sputtered particles scattered by the pre-sputter adhere to the inner wall surface or the like of the chamber 10 on the opposite side to the film-forming object 6, and are formed on the film-forming object 6 or the film-forming object 6 by the pre-sputtering. The effect on the film can be reduced. Further, the second leakage magnetic field M2 formed by leaking from the second region A2 has a lower magnetic field intensity than the first leakage magnetic field M1, and the plasma P2 generated in the second space S2 is lower than the plasma P1. Low density. For this reason, in the pre-sputtering, the sputtering is performed by a weaker discharge than in the main sputtering, so that the consumption of the target 2 due to the pre-sputtering can be suppressed.

  Next, another embodiment of the present invention will be described. In the following description, only differences from the first embodiment will be mainly described, and the same components will be denoted by the same reference numerals and description thereof will be omitted.

[Embodiment 2]
FIG. 4 shows a film forming apparatus 101 according to Embodiment 2 of the present invention. In the first embodiment, the intensity of the second leakage magnetic field M2 leaking from the second region A2 is set to be lower than the intensity of the first leakage magnetic field M1 leaking from the first region A1 by the magnetic plate 5. Was. On the other hand, in the second embodiment, the magnetic force of the second magnet unit 3B itself is made weaker than the magnetic force of the first magnet unit 3A on the film formation target 6 side. Thereby, the intensity of the second leakage magnetic field M2 leaking from the second region A2 is set lower than the intensity of the first leakage magnetic field M1 leaking from the first region A1. By doing so, it is possible to weaken the leakage magnetic field on the side of the second area A2 without using the magnetic plate 5 and to perform a weak discharge, and to perform main sputtering in the first area A1 and pre-sputtering in the second area A2 And can be performed efficiently.

[Embodiment 3]
FIG. 5 shows a film forming apparatus 102 according to Embodiment 3 of the present invention. In the third embodiment, a partition member 400 for partitioning the inside of the chamber 10 into a first space S1 and a second space S2 for forming a film on the film formation target 6 is provided.

  As described above, the first space S1 is a region where high-density plasma P1 is generated during main sputtering, and the second space S2 is a region where low-density plasma P2 is generated during pre-sputtering. It is. The film forming apparatus 102 has a first gas introduction port 71 for introducing a gas into the first space S1 and a second gas introduction port 72 for introducing a gas into the second space S2. The respective gas inlets 71 and 72 may be connected to different gas supply sources. Different types of gases may be supplied from the respective gas introduction ports 71 and 72.

  The partition member 400 includes a pair of horizontal plate portions 401 on the left and right sides of the rotary cathode 8 along a horizontal plane passing through the central axis N of the rotary cathode 8, and a support plate portion 402 extending in the vertical direction that supports the horizontal plate portion 401. It is constituted by a plate material bent in an L-shape provided. The support plate 402 is fixed to the inner wall surface of the chamber 10, and the end of the horizontal plate 401 on the rotary cathode 8 side is opposed to the side surface of the target 2 via a small gap. The horizontal plate 401 may be directly fixed to the wall of the chamber 10. By partitioning the first space S1 and the second space S2 in this manner, it is possible to suppress the influence of scattered particles such as oxides at the time of pre-sputtering on the object to be film-formed.

[Embodiment 4]
FIG. 6 shows a film forming apparatus 103 according to Embodiment 4 of the present invention. In the fourth embodiment, one magnet unit 3 is provided so as to face the first area A1 on the film formation target 6 side, and two magnet units 3 are provided so as to face the second areas A21 and A22. That is, the film forming apparatus 103 includes a first magnet unit 3A arranged to generate a leakage magnetic field from the first region A1 and a leakage magnetic field M21, M22 from the second regions A21, A22. And two second magnet units 3B1 and 3B2 to be arranged. The second magnet units 3B1, 3B2 are arranged on the upstream side and the downstream side along the rotation direction of the target, and have a triangular arrangement together with the first magnet unit 3A.

By doing so, a plurality of plasmas P21 and P22 are generated in the second area A2 by the two magnetic fields M21 and M22 by the two second magnet units 3B1 and 3B2, and the discharge area on the back side is widened. Thus, the surface uniformity of the cleaning can be improved. Note that a plurality of second magnet units may be provided, and the number is not limited to two, and may be three or more.

[Other Embodiments]
Note that the present invention is not limited to the above-described embodiment, and various configurations can be adopted without departing from the spirit of the present invention.

  For example, in the first to third embodiments, the magnet unit 3 is arranged such that one second magnet unit 3B is 180 ° opposite to the first magnet unit 3A facing the film-forming target. The configuration may be such that the two second magnet units 3B are arranged one-sidedly in the rotation direction downstream like the magnet unit 3B2 downstream of the two second magnet units of the fourth embodiment. By doing so, the target 2 can be cleaned immediately before the main sputtering, and the cleaning effect is high.

  In each of the above embodiments, the case where the magnetic plate 5 is arranged in the case 4 together with the magnet unit 3 has been described. However, the magnetic plate 5 may be arranged in a gap between the outer periphery of the case 4 and the inner periphery of the target 2.

  Further, the size of the magnetic plate is substantially semicircular in cross section in the above embodiment, and is a size covering the range of 180 ° of the cylindrical target, but is not limited to 180 °. . The size preferably covers a range of 90 ° to 270 ° of the cylindrical target, and more preferably a size covering a range of 150 ° to 210 °.

  Further, in the above-described embodiment, the magnetic plate 5 is configured by one magnetic plate, but may be configured to be stacked two or is not limited to one.

  Further, in the above embodiment, the case where the number of the rotary cathodes 8 is one is exemplified, but the present invention is also applicable to a film forming apparatus in which a plurality of the rotary cathodes 8 are arranged inside the chamber 10. More specifically, the present invention can be applied to a film forming apparatus in which a plurality of rotary cathodes 8 each having a target 2 of a dissimilar material are arranged, and a deposition layer having a laminated structure of dissimilar materials is formed on a deposition target 6. is there. When a heterogeneous material is formed with a plurality of rotary cathodes 8, sputtered particles of different materials sputtered from the target 2 of another rotary cathode 8 may adhere to the target 2 of one rotary cathode 8. (Contamination). As described above, when the contamination occurs, the composition ratio of the film formed on the film formation target 6 may be changed from an intended ratio. Even in such a case, if the weak discharge is always performed on the back surface side as in the above-described embodiments, the adhered dissimilar material is always cleaned and removed, and the composition ratio of the film formation layer can be maintained. .

1 film forming apparatus 2 target 3 magnet unit (magnetic field generating means)
6 film formation target 10 chamber 11 target driving device (target driving means)
A1 First area A2 Second area M1 First stray magnetic field M2 Second stray magnetic field

Claims (15)

A chamber in which a film formation target and a cylindrical target are arranged,
Magnetic field generating means provided inside the target, for generating a leakage magnetic field leaking from the outer peripheral surface of the target,
A target driving unit configured to rotationally drive the target, and a film forming apparatus configured to form a film on the film formation target disposed to face the target,
The magnetic field generation means includes: a first leakage magnetic field leaking from a first region of the outer surface of the target facing the film formation target of the target; and a film formation target of the target on the outer surface of the target. And a second leaked magnetic field leaking from a second area not facing the object.
The film formation apparatus, wherein the intensity of the second leakage magnetic field is lower than the intensity of the first leakage magnetic field.   2. The film forming apparatus according to claim 1, wherein the second area is located on the opposite side of the first area with respect to a rotation axis of the target. 3.   The said magnetic field generation means has the 1st magnet unit which produces | generates the said 1st leakage magnetic field, and the 2nd magnet unit which produces | generates the said 2nd leakage magnetic field, The Claim 1 or 2 characterized by the above-mentioned. 3. The film forming apparatus according to item 1.   The film forming apparatus according to claim 3, wherein a magnetic plate is disposed between the second magnet unit and the target.   5. The film forming apparatus according to claim 4, wherein the magnetic plate is an arc-shaped magnetic plate having a cross section orthogonal to a longitudinal direction of the target.   6. The film forming apparatus according to claim 1, wherein the second magnet unit is a magnet unit having a lower magnetic force than the first magnet unit. 7.   The film forming apparatus according to any one of claims 1 to 6, further comprising a mode for simultaneously performing sputtering in the first region and sputtering in the second region.   8. The apparatus according to claim 1, further comprising a partition member for partitioning the inside of the chamber into a first space facing the first region and a second space facing the second region. The film forming apparatus according to claim 1. A gas supply unit for supplying a sputtering gas to the inside of the chamber,
The position of a gas supply port provided by the gas supply means is perpendicular to a normal to a film formation target surface of the film formation target and near a plane including a rotation axis of the target. The film forming apparatus according to any one of claims 1 to 8.   10. The apparatus according to claim 1, wherein the target includes a plurality of cathode units in the chamber, each having the magnetic field generating means, and the target being arranged such that the magnetic field generating means is disposed therein. The film forming apparatus according to claim 1. A chamber in which a film formation target and a cylindrical target are arranged,
Magnetic field generating means provided inside the target, for generating a leakage magnetic field leaking from the outer peripheral surface of the target,
A target driving unit configured to rotationally drive the target, and a film forming apparatus configured to form a film on the film formation target disposed to face the target,
In a cross section perpendicular to the longitudinal direction of the target, a point on the outer periphery of the target, which is the point at which the distance from the object to be filmed becomes shortest when it is arranged to face the object to be filmed. A first point, a straight line connecting the first point and a point on the rotation axis of the target is a first straight line, and a straight line passing through the point on the rotation axis of the target and perpendicular to the first straight line is defined as a first point. As a second straight line,
When the target is divided by a plane including the second straight line and parallel to the longitudinal direction of the target, a portion including the first point is defined as a first portion, and the other is defined as a second portion. ,
The magnetic field generating means generates a first stray magnetic field leaking from an outer surface of the first portion of the target and a second stray magnetic field leaking from an outer surface of the second portion of the target. Means to
The film formation apparatus, wherein the intensity of the second leakage magnetic field is lower than the intensity of the first leakage magnetic field. A chamber in which a film formation target and a cylindrical target are arranged,
Magnetic field generating means provided inside the target, for generating a leakage magnetic field leaking from the outer peripheral surface of the target,
A target driving unit configured to rotationally drive the target, and a film forming apparatus configured to form a film on the film formation target disposed to face the target,
A first space for performing sputtering for forming a film on the film formation target and a second space for performing sputtering for cleaning an outer surface of the target are provided inside the chamber. ,
The magnetic field generating means includes: a first leaked magnetic field leaking from an outer surface of the target on the first space side; a second leaked magnetic field leaking from an outer surface of the target on the second space side; Means for generating
The film formation apparatus, wherein the intensity of the second leakage magnetic field is lower than the intensity of the first leakage magnetic field. A method for manufacturing an electronic device, comprising: a sputter film forming step of disposing a film forming object in a chamber, depositing sputter particles flying from a cylindrical target arranged to face the film forming object, and forming a film. And
The magnetic field generating means disposed inside the target causes the target to move in both a first direction from the target toward the film-forming target and a second direction away from the film-forming target. Generates a leakage magnetic field that leaks from the outer surface,
The strength of the stray magnetic field in the second direction is lower than the strength of the stray magnetic field in the first direction;
A main sputtering step of performing sputtering by concentrating plasma by a leakage magnetic field in the first direction;
A pre-sputtering step of performing sputtering while concentrating plasma by a leakage magnetic field in the second direction.   14. The method according to claim 13, wherein the pre-sputtering step is a step of cleaning an outer surface of the target.   15. The method according to claim 14, wherein the main sputtering step and the pre-sputtering step are performed simultaneously.