JPH09209141A - Sputtering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering device provided with a magnetron cathode capable of uniformly cleaning a target at the time of presputtering. SOLUTION: The positional relation between a magnet 1 and the setting position of a target 10 is made changeable, and the leakage magnetic field is selectively formed in the vicinity of the setting position of the target 10 in accordance with the change of the positional relation. In the case ordinary sputtering is executed, the distance between the magnet 1 and the target 10 is made close and is changed so as to form the leakage field in the vicinity of the target 10, and sputtering with good efficiency is executed. Furthermore, in the case presputtering is executed, the distance between the magnet 1 and the target 10 is made distant to weaken the intensity of the leakage field formed in the vicinity of the target 10, and the whole area of the target is homogeneously sputtered to execute uniform cleaning.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a sputtering apparatus.

[0002]

2. Description of the Related Art A sputtering apparatus is a thin film forming apparatus which utilizes a phenomenon in which ions collide with a target, which is a cathode, and particles sputtered from the target are deposited on a substrate on an anode side which is placed facing each other. Magnetron sputtering using magnetron discharge is known as sputtering. This magnetron sputter is equipped with a magnetron cathode, and high density plasma is confined in the vicinity of the target by orthogonal electric and magnetic fields to enhance the sputtering efficiency.

FIG. 4 is a schematic configuration diagram for explaining a magnetron cathode of a conventional sputtering apparatus. In FIG. 4, only the magnetron cathode is shown in the sputtering apparatus. The magnetron cathode is provided with the magnet 1 in the vicinity of the target 10 attached to the backing plate 3 on the side opposite to the substrate with the backing plate 3 in between. This magnet 1 has a structure in which a magnet placed at the center and an annular magnet arranged on the outer side with a polarity opposite to that of the magnet are magnetically closed by a yoke 2, and a semicircular magnetic field line shown by a broken line in the figure. A leakage magnetic field is formed in the vicinity of the substrate side of the target 10 by 4. The magnetron cathode applies an electric field (not shown) in a direction orthogonal to the magnetic lines of force 4, thereby confining the high-density plasma near the substrate of the target 10.

[0004]

In forming a thin film by a sputtering apparatus, usually, a cleaning process for removing dirt on the surface of a target is performed by pre-sputtering, and then sputtering is performed to form a thin film on a substrate.

FIG. 5 is a diagram for explaining the action of the magnetron cathode of the conventional sputtering apparatus. In the conventional magnetron cathode, due to the action of the leakage magnetic field by the magnet 1 and the electric field (not shown), the ion current density distribution generated on the substrate 12 side of the target 10 is uneven. In the regions indicated by P and R in the figure, the electrons spirally move along the lines of magnetic force 4 and are trapped in the vicinity of the target 10 to make the ion current density dense, so that the target 10 is efficiently sputtered. The target 10 is eroded by this sputtering to form an erosion 11. On the other hand, the ion current density is sparse in the regions indicated by O, Q, and S, and the target 10 is hardly sputtered.

In the conventional magnetron cathode, the same operation is performed in both presputtering and normal sputtering operating states. Therefore, in the pre-sputtering for the purpose of removing the dirt on the surface of the target 10, in the regions indicated by O, Q, and S in the figure, the sputtering is scarcely performed, and the cleaning becomes insufficient. There is. Further, the particles sputtered and emitted from the regions indicated by P and R in the drawing are O and
In some cases, it may reach a region where sputtering is difficult to be performed, which is indicated by Q and S. There is also a problem that the particles may adhere to the substrate 12 from the target 10 and contaminate the substrate itself.

Therefore, the present invention solves the above-mentioned problems of the magnetron cathode of the conventional sputtering apparatus,
An object of the present invention is to provide a sputtering apparatus equipped with a magnetron cathode capable of uniformly cleaning a target during pre-sputtering.

[0008]

The present invention makes it possible to change the positional relationship between a magnet and a target installation position in a sputtering apparatus, and by changing the positional relationship, a leakage magnetic field can be selectively generated in the vicinity of the target installation position. The above object is achieved by providing a magnetron cathode formed in the above.

The magnetron cathode provided in the sputtering apparatus of the present invention is a cathode which forms a magnetic field and an electric field orthogonal to each other in the vicinity of the target and performs sputtering by using the magnetron discharge formed by the magnetic field and the electric field.
By changing the positional relationship between the magnet and the target installation position, it is possible to form a leakage magnetic field in the vicinity of the target installation position or weaken the strength of the leakage magnetic field.

When normal sputtering is performed by the magnetron cathode of the sputtering apparatus of the present invention, the positional relationship between the magnet and the target is changed so that a stray magnetic field is formed in the vicinity of the target, thereby improving efficiency. Sputter is performed. Further, when performing pre-sputtering with the magnetron cathode of the sputtering apparatus of the present invention, the positional relationship between the magnet and the target is changed so that the leakage magnetic field for trapping electrons near the target is weakened. The entire target area is evenly sputtered and uniformly cleaned.

In the first embodiment of the present invention, the positional relationship between the magnet and the target installation position is changed by changing the distance between them. As a result, the magnet is brought close to the target to form a leakage magnetic field that can trap electrons outside the target, and high-density plasma is confined near the target to efficiently perform normal sputtering, while keeping the magnet away from the target. By reducing the strength of the leakage magnetic field formed outside the target and performing conventional sputtering, the entire target area is uniformly sputtered.

In the second embodiment of the present invention, the positional relationship between the magnet and the target installation position is changed so that the magnet is moved in a direction orthogonal to the facing surface of the two, thereby changing the distance between the magnet and the target installation position. To do. Further, in the third embodiment of the present invention, the positional relationship between the magnet and the target installation position is changed so that the magnet is moved in a direction parallel to the facing surface of the two, thereby changing the distance between the magnet and the target installation position. It is a thing.

Further, in the above-mentioned embodiment, the distance can be changed by linear movement or rotational movement of the magnet.

[0014]

Embodiments of the present invention will be described below in detail with reference to the drawings. A configuration example of the embodiment of the present invention will be described with reference to FIGS. 1, 2, and 3. 1 and 2 are block diagrams for explaining the configuration of one embodiment of the magnetron cathode of the sputtering apparatus of the present invention. 1 and 2, only the magnetron cathode is shown in the sputtering apparatus. Further, FIG. 3 shows a schematic overall view of the sputtering apparatus of the present invention. The configuration shown in FIG. 3 is an example of the configuration of the sputtering apparatus of the present invention. In this configuration example, the chamber 1
4, a magnetron cathode 9 is provided, and a target provided on the magnetron cathode 9 sputters a substrate 12 also placed in the chamber 14.

1 and 2, the magnetron cathode is provided with a cathode body 7, a backing plate 3 is fixed to the cathode body 7, and the backing plate 3 is on the side facing a substrate (not shown). The target 10 can be attached. The magnet 1 has a structure in which a magnet placed at the center and an annular magnet having a polarity opposite to that of the magnet and arranged outside are magnetically closed by a yoke 2.
A semicircular magnetic field line 4 shown by a broken line in the drawing is formed. Also,
A shaft 6 is mounted on the yoke 2, and the shaft 6 is slidably mounted on the cathode body 7. Thereby, the magnet 1 can change the distance from the installation position of the target 10 by the movement of the shaft 6.

FIG. 1 shows the position of the magnet 1 during normal sputtering, and FIG. 2 shows the position of the magnet 1 during pre-sputtering when cleaning the target. During normal sputtering shown in FIG. 1, the shaft 6 moves to the backing plate 3 side, and the magnet 1 forms its magnetic force line 4 in the vicinity of the target 10. The magnetic force line 4 is applied to the substrate side of the target 10 by the magnetic field leaked. The tunnel 5 is formed. The stray magnetic field forms a stray magnetic field capable of trapping electrons outside the target together with an orthogonal electric field (not shown),
Magnetron sputtering can be performed by confining the high-density plasma near the substrate side of the target 10 to generate magnetron discharge. This makes target 1
With 0, good sputtering is performed in the vicinity of the magnetic tunnel 5.

Further, during the pre-sputtering shown in FIG. 2, the shaft 6 moves in the direction away from the backing plate 3 side as shown by the arrow in the figure, and the magnetic force line 4 by the magnet 1 is separated from the vicinity of the target 10 to make the target. The strength of the leakage magnetic field to 10 is reduced. As a result, the target 10
The ion current density on the substrate side is uniform because it is not affected by the leakage magnetic field, and the target 10 is uniformly sputtered over the entire area. By this uniform sputtering, the surface of the target 10 is uniformly cleaned.

The distance between the magnet 1 and the position where the target 10 is installed during pre-sputtering can be set by the strength of the magnet and the size and shape of the magnet and the magnetron cathode as a whole. The strength of the leakage magnetic field in the vicinity of 10 is, for example, about 250 gauss to 300 gauss, and by setting the strength of the leakage magnetic field at the time of pre-sputtering to be smaller than, for example, about 100 gauss, uniform cleaning can be practically performed. it can.

Next, with respect to the configuration example of the second embodiment of the present invention, block diagrams for explaining the configuration of the second embodiment of the magnetron cathode included in the sputtering apparatus of the present invention shown in FIGS. 6 and 7. It demonstrates using. Note that FIG.
FIG. 7 shows only the magnetron cathode in the sputtering apparatus.

6 and 7, the magnetron cathode is provided with a cathode body 7, a backing plate 3 is fixed to the cathode body 7, and the backing plate 3 has a target 10 on the side facing a substrate (not shown). Can be installed. The magnet 1 is the first
The leakage magnetic field is formed by the semicircular magnetic force lines 4 shown by the broken line in the figure. A shaft 6 is attached to a yoke 2 forming a closed magnetic path of the magnet 1, and the shaft 6 is rotatably attached to a cathode body 7. Thereby, the magnet 1 can change the distance from the installation position of the target 10 by the rotation of the shaft 6.

FIG. 6 shows the position of the magnet 1 during normal sputtering, and FIG. 7 shows the position of the magnet 1 during pre-sputtering when cleaning the target. At the time of normal sputtering shown in FIG. 6, the shaft 6 is rotated to move the magnet 1 to the target 10 side, and the magnetic force line 4 is formed in the vicinity of the target 10. These magnetic force lines 4 form a magnetic force tunnel 5 on the substrate side of the target 10 due to the leakage magnetic field, and the leakage magnetic field confine high-density plasma near the substrate side of the target 10 together with an orthogonal electric field (not shown) to generate magnetron discharge. Magnetron sputtering is performed to obtain good sputtering.

Further, during the pre-sputtering shown in FIG. 7, the shaft 6 rotates in the direction away from the target 10 side as indicated by the arrow in the figure, separating the magnetic force line 4 from the vicinity of the target 10 and moving it to the target 10. Reduce the strength of the stray magnetic field. As a result, the ion current density on the substrate side of the target 10 is uniform because it is not affected by the leakage magnetic field.
The target 10 is uniformly sputtered over the entire area. By this uniform sputtering, the surface of the target 10 is uniformly cleaned.

Next, an example of the configuration of the third embodiment of the present invention will be described with reference to the block diagrams for explaining the configuration of the third embodiment of the magnetron cathode of the present invention shown in FIGS. 8 and 9. . 8 and 9 show only the magnetron cathode in the sputtering apparatus.

8 and 9, the magnetron cathode is provided with a cathode body 7, to which a backing plate 3 is fixed, and the backing plate 3 has a target 10 on the side facing a substrate (not shown). Can be installed. The magnet 1 can be the same as in the first and second embodiments, and forms a semicircular magnetic force line 4 shown by a broken line in the drawing. A shaft 6 is attached to a yoke 2 forming a closed magnetic path of the magnet 1, and the shaft 6 is attached to a cathode body 7 so as to be movable in a direction parallel to the target 10. As a result, the magnet 1 is moved to the target 10 by the movement of the shaft 6.
The distance from the installation position of can be changed.

FIG. 8 shows the position of the magnet 1 during normal sputtering, and FIG. 9 shows the position of the magnet 1 during pre-sputtering when cleaning the target. During normal sputtering shown in FIG. 8, the shaft 6 is moved in a direction parallel to the target 10 to move the magnet 1 to the target 10.
And the magnetic force lines 4 are formed in the vicinity of the target 10. These magnetic force lines 4 form a magnetic force tunnel 5 on the substrate side of the target 10 due to a leakage magnetic field. The leakage magnetic field confines high-density plasma in the vicinity of the substrate side of the target 10 together with an orthogonal electric field (not shown) to cause magnetron discharge to perform magnetron sputtering and to perform good sputtering.

Further, during the pre-sputtering shown in FIG. 9, the shaft 6 moves in a direction parallel to the target 10 in a direction away from the target 10 side as shown by an arrow in the figure,
The magnetic force line 4 is separated from the vicinity of the target 10 to reduce the strength of the leakage magnetic field to the target 10. As a result, the ion current density on the substrate side of the target 10 is uniform because it is not affected by the leakage magnetic field, and the target 10 is uniformly sputtered over the entire area. By this uniform sputtering, the surface of the target 10 is uniformly cleaned.

[0027]

As described above, according to the present invention,
In the magnetron cathode of the sputtering device,
The target can be uniformly cleaned during pre-sputtering.

[Brief description of drawings]

FIG. 1 is a block diagram illustrating a configuration of an embodiment of a magnetron cathode of a sputtering apparatus of the present invention.

FIG. 2 is a block diagram illustrating a configuration of an embodiment of a magnetron cathode of a sputtering device of the present invention.

FIG. 3 shows a schematic overall view of a sputtering apparatus of the present invention.

FIG. 4 is a schematic configuration diagram for explaining a magnetron cathode of a conventional sputtering device.

FIG. 5 is a diagram illustrating an operation of a magnetron cathode of a conventional sputtering device.

FIG. 6 is a block diagram illustrating the configuration of the second embodiment of the magnetron cathode of the sputtering device of the present invention.

FIG. 7 is a block diagram illustrating the configuration of the second embodiment of the magnetron cathode of the sputtering device of the present invention.

FIG. 8 is a block diagram illustrating a configuration of a magnetron cathode of a sputtering apparatus according to a third embodiment of the present invention.

FIG. 9 is a block diagram illustrating the configuration of a magnetron cathode of a third embodiment of the sputtering apparatus of the present invention.

[Explanation of symbols]

1 ... Magnet, 2 ... Yoke, 3 ... Backing plate, 4 ...
Lines of magnetic force, 5 ... Magnetic tunnel, 6 ... Shaft, 7 ... Cathode body, 8 ... Electron trajectory, 9 ... Magnetron cathode, 10 ... Target, 11 ... Erosion, 12 ... Substrate, 14 ... Chamber.

Claims (1)

[Claims] 1. A positional relationship between a magnet and a target installation position can be changed, and the change of the positional relationship includes a magnetron cathode that selectively forms a leakage magnetic field near the target installation position. And sputtering equipment.