JP7158098B2 - Film forming apparatus and method for manufacturing electronic device - Google Patents

Description

The present invention relates to a film forming apparatus and an electronic device manufacturing method.

A sputtering method is widely known as a method for forming a thin film made of a material such as a metal or a metal oxide on a film-forming object such as a substrate or a laminate formed on the substrate. 2. Description of the Related Art A sputtering apparatus for forming a film by a sputtering method has a structure in which a target made of a film forming material and an object to be film-formed are arranged to face each other in a vacuum chamber. When a negative voltage is applied to the target, plasma is generated in the vicinity of the target, and the surface of the target is sputtered by ionized inert gas elements, and the sputtered particles are deposited on the film-forming object to form a film. Also known is a magnetron sputtering method in which a magnet is placed behind a target (inside the target in the case of a cylindrical target) and the generated magnetic field increases the electron density near the cathode for sputtering.

In this type of conventional film deposition apparatus, for example, after exchanging the target, after opening the chamber to the atmosphere, or when the target is not exposed to the plasma without performing the film deposition process continuously for a long period of time. , the surface of the target may be oxidized or altered. In this way, when the surface of the target is oxidized or degraded, or when foreign matter adheres to the surface of the target, before sputtering the object to be film-formed, the object other than the object to be film-formed is sputtered. Pre-sputtering is performed to clean the surface of the target (Patent Document 1).

As a method of pre-sputtering in a rotary cathode RC (also referred to as a rotating cathode or a rotatable cathode) that performs sputtering while rotating a target, there is a method described in Patent Document 2, for example.
In the sputtering apparatus described in Patent Document 2, the following three states can be achieved by rotating the magnet (magnet assembly) provided inside the RC.
(1) State where the plasma faces the opposite side of the substrate (film formation target) (2) State where the plasma faces the side (horizontal direction to the film formation surface of the substrate) (3) State where the plasma faces the substrate state of being

That is, by generating plasma in the state (1) and maintaining the state in (1) or (2), pre-sputtering can be performed without sputtering the substrate. After the pre-sputtering is completed, if the magnet is rotated to the state (3), the pre-sputtering can be changed to the main sputtering without moving the substrate or RC.

JP 2016-204705 A Japanese Patent Application Publication No. 2015-519477

However, in the method of rotating the magnet as described in Patent Document 2, when the object to be film-formed becomes large and the RC becomes long, the magnet becomes heavy and difficult to rotate.

As another method, a method of moving the entire RC to a position for pre-sputtering and performing pre-sputtering can be considered, but the moving distance becomes long and productivity decreases.

SUMMARY OF THE INVENTION An object of the present invention is to provide a film forming apparatus and an electronic device manufacturing method capable of easily performing pre-sputtering with high productivity.

A film formation apparatus as one aspect of the present invention includes a chamber in which a film formation object and a cylindrical target are arranged, and a magnetic field that is provided inside the target and that leaks from the outer peripheral surface of the target. A film forming apparatus comprising magnetic field generating means and target driving means for rotating the target, wherein the magnetic shielding member is movably provided between the magnetic field generating means and the inner peripheral surface of the target. a shielding member driving means for driving the magnetic shielding member; and a main sputtering mode for forming a film on the film-forming object by moving the magnetic shielding member by the shielding member driving means, and cleaning the surface of the target. and a control means for switching between pre-sputtering modes .

In addition, a film forming apparatus as another aspect of the present invention includes a chamber in which a film forming object and a cylindrical target are arranged, and a chamber provided inside the target to leak from the outer peripheral surface of the target. A film forming apparatus comprising magnetic field generating means for generating a magnetic field and target driving means for rotationally driving the target, wherein a magnetic field generating means and an inner peripheral surface of the target are provided coaxially with the target. A magnetic shielding member rotatably provided in a magnetic shielding member, a shielding member driving means for rotatingly driving the magnetic shielding member, and a magnetic shielding member moved by the shielding member driving means to form a film on the film-forming object. The present invention is characterized by comprising control means for switching between a main sputtering mode and a pre-sputtering mode for cleaning the surface of the target .

In addition, a film forming apparatus as still another aspect of the present invention includes a chamber in which a film forming object and a cylindrical target are arranged; A film forming apparatus for forming a film on the object to be film-formed arranged in the film-forming area in the chamber, comprising: a magnetic field generating means for generating a magnetic field that and a state in which a magnetic shielding member is movably provided between the magnetic field generating means and the inner peripheral surface of the target, and the magnetic field generating means is arranged between the magnetic shielding member and the film forming area. and a second operation mode in which the magnetic shielding member is arranged between the magnetic field generating means and the film formation area. characterized by

Further, according to another aspect of the present invention, there is provided a method for manufacturing an electronic device, in which an object to be film-formed is arranged in a chamber, and sputtering particles flying from a cylindrical target arranged to face the object to be film-formed A method of manufacturing an electronic device, comprising a sputtering film formation step of depositing a film of a first and a second direction away from the object to be film-formed, and discharge while rotating the target while shielding the magnetic field generated in the first direction. The present invention is characterized by comprising a sputtering step and a main sputtering step of discharging while rotating the target while shielding the magnetic field generated in the second direction.

According to the present invention, pre-sputtering can be performed easily with good productivity.

1A is a schematic diagram showing the configuration of a film forming apparatus according to Embodiment 1, and FIG. 1B is a perspective view of a magnetic shielding plate according to Embodiment 1. FIG. 1A is a schematic diagram showing the configuration of the film forming apparatus of Embodiment 1 in the state of this sputtering mode, and FIG. 1B is a side view of the film forming apparatus of the embodiment; 4 is a perspective view of the first magnet unit of Embodiment 1. FIG. (A) is a perspective view showing an example of a drive mechanism, and (B) is a cross-sectional view showing an example of the drive mechanism. (A) is a perspective view showing another example of the drive mechanism, and (B) is a cross-sectional view showing another example of the drive mechanism. 4 is a schematic diagram showing the configuration of a film forming apparatus according to Embodiment 2. FIG. (A) is a schematic diagram showing the configuration of a film forming apparatus according to Embodiment 3; (B) is a perspective view of a partition plate according to Embodiment 3; The figure which shows the general layer structure of an organic EL element.

Embodiments of the present invention are described in detail below. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In addition, unless otherwise specified, the scope of the present invention is limited only to the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, dimensions, materials, shapes, etc., in the following description. It's not intended.

[Embodiment 1]
First, with reference to FIGS. 1A and 2A, the basic configuration of the film forming apparatus 1 of Embodiment 1 will be described. FIG. 1A shows the structure of the film forming apparatus 1 in the pre-sputtering mode, and FIG. 2A shows the structure of the film forming apparatus 1 in the main sputtering mode.

The film forming apparatus 1 according to the present embodiment is used to manufacture various electronic devices such as semiconductor devices, magnetic devices, electronic components, and optical components on substrates (including those on which a laminate is formed on the substrate). Used to deposit thin films. More specifically, the film forming apparatus 1 is preferably used in manufacturing electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Among others, the film forming apparatus 1 according to the present embodiment is particularly preferably applicable to the manufacture of organic light-emitting devices such as organic EL (ElectroLuminescence) devices and organic photoelectric conversion devices such as organic thin-film solar cells. The electronic device in the present invention includes a display device (eg, an organic EL display device) and a lighting device (eg, an organic EL lighting device) equipped with a light-emitting element, and a sensor (eg, an organic CMOS image sensor) equipped with a photoelectric conversion element. It is a thing.

FIG. 8 schematically shows a general layer structure of an organic EL element. As shown in FIG. 8, an organic EL element generally has a structure in which an anode, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer, and a cathode are formed in this order on a substrate. be. The film forming apparatus 1 according to the present embodiment is suitably used for forming a laminated film of metal, metal oxide, or the like used for an electron injection layer or an electrode (cathode) on an organic film by sputtering. In addition, it is not limited to film formation on an organic film, and lamination film formation is possible on various surfaces as long as it is a combination of materials that can be formed by sputtering, such as metal materials and oxide materials.

The film forming apparatus 1 has a chamber 10 which has a gas inlet 7 and an exhaust port (not shown) and whose interior can be maintained in vacuum. An inert gas such as argon or a reactive gas is supplied to the interior of the chamber 10 through a gas introduction port 7 by gas introduction means (not shown). Evacuation is performed by an exhaust means (not shown).

In the chamber 10 , a film-forming target 6 to be subjected to film-forming processing by the film-forming apparatus 1 and a cylindrical target 2 facing the film-forming target 6 are arranged. With the target 2 placed in the chamber 10, the object 6 to be film-formed is conveyed by a conveying means (not shown) to the film-forming area A0, which is a region in the chamber 10 facing the target 2, and the film-forming process is performed. may be broken. The film-forming object 6 is moved in a direction parallel to the film-forming surface of the film-forming object 6 within the film-forming area A0 by film-forming object driving means (not shown), and the film-forming process is performed. good. Inside the target 2, a magnet unit 3 is provided as magnetic field generating means. The target 2 is driven to rotate about the central axis of the cylinder of the target 2 by a target driving device 11 as driving means. The magnet unit 3 is mounted in a sealed case 4 and constitutes a rotary cathode 8 together with the target 2 .

The target 2 functions as a supply source of a film-forming material for forming a film on the film-forming object 6 . Although the material of the target 2 is not particularly limited, examples thereof include metal targets such as Cu, Al, Ti, Mo, Cr, Ag, Au, and Ni, and alloy materials thereof. The target 2 may have a layer made of another material such as a backing tube formed inside the layer in which these film forming materials are formed. Also, the target 2 is a cylindrical target, but the term "cylindrical" here does not mean only a mathematically strict cylindrical shape. Including those whose vertical cross section is not a mathematically rigorous "circle". That is, the target 2 in the present invention may be any cylindrical shape that can rotate about its central axis.

The magnet unit 3 has a first area A1, which is an area between the target 2 and the film-forming object 6 arranged in the film-forming area A0, and a second area A2 in a direction away from the film-forming object, It is configured to generate a magnetic field that concentrates the plasma P in the vicinity of the outer periphery of the target 2 . Furthermore, inside the target 2 , a magnetic shielding plate 5 for shielding the magnetic field is movably arranged between the inner periphery of the target 2 and the magnet unit 3 . The term "shielding" used herein does not only mean blocking 100% of the magnetic field passing through the magnetic shielding plate 5, but also includes reducing the magnetic field passing through the magnetic shielding plate 5.

The magnetic shielding plate 5 has a first shielding position (I) (see FIG. 1A) that shields the generation of the magnetic field in the first area A1 and allows the generation of the magnetic field in the second area A2, and the second A second shielding position (II) (see FIG. 2A) that shields the generation of the magnetic field in the area A2 of and allows the generation of the magnetic field in the first area A1, and It is driven by the shielding plate driving device 12 .

A power supply 13 that applies a bias voltage is connected to the target 2 . Note that the chamber 10 is grounded. The film forming apparatus 1 controls the shielding plate driving device 12, the target driving device 11, and the power source 13 by the control device 14, so that the surface of the target 2 is cleaned before the main sputtering for forming the film on the film forming object 6. Perform pre-sputtering to clean. In the pre-sputtering, the magnetic shielding plate 5 is moved to the first shielding position (I) (see FIG. 1(A)), the target 2 is sputtered in the second area A2, and oxides and altered properties on the surface of the target 2 are removed. This is the mode for removing parts, adhering foreign matter, and the like. After that, the magnetic shielding plate 5 is moved to the second shielding position (II), and control is performed so as to perform the main sputtering for sputtering the cleaned target 2 in the pre-sputtering mode.

In the illustrated example, the film-forming object 6 is placed on the ceiling side of the chamber 10 in parallel with the rotational axis of the rotary cathode 8, that is, horizontally, and both side edges thereof are held by substrate holders (not shown). The film-forming object 6 is carried in, for example, from an entrance gate (not shown) provided on the side wall of the chamber 10, is moved to a film-forming position in the film-forming area A0, and is formed thereon. Ejected from the exit gate. As described above, the film forming apparatus 1 may have a so-called deposit-up configuration in which film formation is performed with the film forming surface of the film forming object 6 facing downward in the direction of gravity. However, it is not limited to this, and the film-forming object 6 is arranged on the bottom side of the chamber 10, the rotary cathode 8 is arranged above it, and the film-forming surface of the film-forming object 6 faces upward in the direction of gravity. A so-called deposit-down configuration in which film formation is performed in the state may also be used. Alternatively, the film formation may be performed in a state in which the film formation target 6 is set vertically, that is, in a state in which the film formation surface of the film formation target 6 is parallel to the direction of gravity.

As shown in FIG. 2(B), the rotary cathode 8 is arranged substantially in the center of the chamber 10 in the vertical direction, and both ends thereof are rotatably supported via support blocks 300 and end blocks 200 .

(Arrangement configuration of magnet unit 30)
The magnet unit 30 includes a first magnet unit 3A that forms a magnetic field in a direction (first direction) toward the film formation target 6 and a direction away from the film formation target 2, that is, in a direction opposite to the first direction. It is constituted by a second magnet unit 3B that creates a magnetic field in a second direction, which is the direction of the magnet. The first magnet unit 3A and the second magnet unit 3B are stacked back-to-back, and the strength of the magnetic force is set to be the same. A space may be provided between the first magnet unit 3A and the second magnet unit 3B. The first magnet unit 3A and the second magnet unit 3B basically have the same configuration, and the configuration will be described by taking the first magnet unit 3A as an example.

As shown in FIG. 3, the first magnet unit 3A includes a central magnet 31 extending parallel to the rotation axis of the rotary cathode 8, a peripheral magnet 32 surrounding the central magnet 31 and having a different polarity than the central magnet 31, and a yoke plate. 33. The peripheral magnet 32 is composed of a pair of linear portions 32a, 32b extending parallel to the central magnet 31, and turning portions 32c, 32c connecting both ends of the linear portions 32a, 32b. The second magnet unit 3B also has the same configuration.

The magnetic field formed by the magnet unit 30 has magnetic lines of force returning in a loop from the magnetic pole of the central magnet 31 toward the linear portions 32a, 32a of the peripheral magnets 32. As shown in FIG. As a result, a toroidal magnetic field tunnel extending in the longitudinal direction of the target 2 is formed near the surface of the target 2 . This magnetic field traps electrons, concentrates the plasma near the surface of the target 2, and enhances the efficiency of sputtering.

(Construction of case)
The case 4 is a cylindrical closed box, and the magnet unit 30 is arranged inside the case 4 . The central axis of the case 4 and the central axis of the target are assembled coaxially with the central axis N of the rotary cathode 8 . The yoke plate 33 of the magnet unit 3 is positioned on a horizontal plane passing through the central axis N, and the vertical plane passing through the centers of the central magnets 31, 31 of the first magnet unit 3A and the second magnet unit 3B is aligned with the central axis. arranged to pass.

On the other hand, as shown in FIGS. 1A and 1B, the magnetic shielding plate 5 is an arch-shaped plate member along the inner periphery of the cylindrical case 4 and is fixed to the inner periphery of the case 4. there is In the illustrated example, the magnetic shielding plate 5 is configured to cover half the circumference of the case 4 and has a semi-cylindrical shape. The magnetic shielding plate 5 may be fixed by attaching it to the inner periphery of the case 4, or by using a fastening member such as a screw. may be configured.

The material of the magnetic shielding plate 5 is not particularly limited as long as it is a material that easily absorbs magnetic flux and concentrates it inside, that is, a material that has a high relative magnetic permeability. The relative magnetic permeability of the material forming the magnetic shielding plate 5 is preferably 500 or higher, preferably 1000 or higher, and more preferably 3000 or higher. The upper limit of the relative magnetic permeability of the material forming the magnetic shielding plate 5 is not particularly limited. More specifically, the material forming the magnetic shield plate 5 is preferably a ferromagnetic material such as Fe, Co, Ni, their alloys, permalloy, mu-metal, or the like.

(Target drive mechanism and shield plate drive mechanism)
4A is a schematic perspective view showing an example of the target driving mechanism 11 and the shielding plate driving mechanism 12, and FIG. 4B is a cross-sectional view of the rotary cathode 8 taken along the rotation axis.

As described above, the rotary cathode 8 is rotatably supported by the end blocks 200 and the support blocks 300 at both ends in the longitudinal direction. In this example, a magnetic shielding plate 5 is fixed to the inner periphery of a cylindrical case 4 and rotates around the central magnet unit 3 as the case 4 rotates. The magnet unit 3 is fixed in the rotational direction by a fixed shaft 35 .

The end block 200 is fixed to the wall of the chamber 10 and has a hollow box shape communicating with the external space. A power transmission shaft 21 that transmits power to the target 2 and a power transmission shaft 41 that transmits power to the case 4 protrude into the hollow interior of the end block 200 . The power transmission shafts 21 and 41 are connected to a motor 130 as a drive source via belt transmission mechanisms 110 and 120 as drive transmission mechanisms, respectively, so that rotational driving force is transmitted. . In the illustrated example, the belt transmission mechanisms 110 and 120 use toothed belts and pulleys, but they are not limited to this.

In this example, the target driving device 11 and the shielding plate driving device 12 use the same motor 130 . That is, the driving side pulley 111 of the belt transmission mechanism 110 is fixed in the middle of the output shaft 131 directly connected to the motor 130 , and the end of the output shaft 131 is connected to the driving side pulley of the magnetic plate driving device 12 via the electromagnetic clutch 125 . 121. Further, the driven side pulley 122 of the magnetic plate driving device 12 is provided with an electromagnetic brake 126 so as to be held at the stop position.

The power transmission shaft 21 of the target 2 is a cylindrical hollow shaft, and the power transmission shaft 41 of the case 4 protrudes from the power transmission shaft 21 of the target 2 through the hollow hole. The power transmission shaft 41 of the case 4 is also a hollow shaft, and a fixed shaft 35 for fixing the magnet unit 3 protrudes toward the end block 200 through the hollow hole. The power transmission shaft 21 of the target 2 protrudes from the center of the end plate 22 fixed to the end of the target 2, and the power transmission shaft 41 of the case 4 protrudes from the center of the end plate 42 of the case 4. there is

On the other hand, the support block 300 is arranged in the chamber 10, and the driven side rotating shafts 24, 44 provided at the ends of the target 2 and the case 4 are rotatably supported by the support block 300. As shown in FIG. Unlike the end block side, it is sufficient that they are mutually rotatably supported. Therefore, the driven side rotation shaft 44 of the case 4 does not need to pass through the driven side rotation shaft 24 of the target 2, and the case 4 rotates on the driven side. It is not necessary for the fixed shaft 35 to pass through the shaft 44 .

Although the support block 300 is arranged inside the chamber 10 and the end block 200 is arranged outside the chamber 10 here, the present invention is not limited to this, and the end block 200 is also arranged inside the chamber 10. may be In this case, the motor 130 and the like may also be arranged inside the end block 200 . The end block 200 and the support block 300 may be arranged inside the chamber 10 so as to be movable together with the rotary cathode 8 parallel to the film formation surface of the film formation object 6 . With this configuration, the rotary cathode 8 can be driven in parallel with the film-forming surface of the film-forming object 6 while rotating the rotary cathode 8 .

FIG. 4B shows a more specific configuration of FIG. 4A.
Since the end block 200 is outside the chamber 10, it is necessary to seal the atmosphere inside the vacuum chamber 10 from the outside air.

(Configuration on the end block side)
A pair of bearings B is provided between the fixed shaft 35 and the power transmission shaft 41 of the case 4 , and the power transmission shaft 41 of the case 4 is rotatable with respect to the fixed shaft 35 . A sealing device 270 suitable for vacuum sealing is mounted in the annular gap between the case 4 and the power transmission shaft 41 . The sealing device 270 has the function of sealing the annular gap while allowing relative rotation between the fixed shaft 35 and the power transmission shaft 41 of the case 4 . The magnet unit 3 and the fixed shaft 35 are connected so that the magnet unit 3 does not rotate even when the case 4 rotates.

A pair of bearings B is also provided between the power transmission shaft 41 of the case 4 and the power transmission shaft 21 of the target 2 so that the power transmission shaft 21 of the target 2 can rotate freely with respect to the power transmission shaft 41 of the case 4. An annular gap between the power transmission shaft 41 of the case 4 and the power transmission shaft 21 of the target 2 is sealed by the sealing device 270 .

Next, a bearing B is also provided between the power transmission shaft 21 of the target 2 and the circular opening 201 provided in the end block 200, and the power transmission shaft of the target 2 is rotatable with respect to the end block 200. Further, the annular gap between the power transmission shaft 21 of the target 2 and the opening 201 is sealed by the sealing device 270 .

In the illustrated example, the driving force transmission shaft 21 is provided on the end plate 22 that closes the open end of the target 2. A fitting portion between the inner periphery of the target 2 and the end plate 22 is sealed with a gasket G. As shown in FIG. Thereby, the inside of the case 4 is maintained in a low pressure state.

(Configuration on Support Block 300 Side)
A driven-side rotary shaft 24 of the target 2 is not hollow, is provided coaxially with the power transmission shaft 21 , and is rotatably supported via a bearing B in a shaft hole 301 provided in a support block 300 . No special sealing device is required for this bearing. The driven-side rotary shaft 24 is provided in an end plate 25 that closes the open end of the target 2. A non-through bearing hole 26 is provided in the inner end surface of the end plate 25. A driven-side rotary shaft 44 of the case 4 is rotatably supported via a bearing B. As shown in FIG. Further, the driven-side rotating shaft 44 of the case 4 is also provided with a non-through bearing hole 46, and the fixed shaft 36 is coaxially fitted to the fixed shaft 35 on the drive side so as to be relatively rotatable.

The end of the target 2 on the support block 300 side is also fastened by a fastening member 290 such as a clamp on the outer peripheral side. , maintains the internal space of the target 2 in a low pressure state.

According to the rotary cathode 8 configured as described above, the rotational driving force of the motor 130 is transmitted to the target 2 via the belt transmission mechanism 110 and the power transmission shaft 21, and the target 2 is rotationally driven.

Further, the rotational driving force of the motor 130 is transmitted to the case 4 through the electromagnetic clutch 125, the belt transmission mechanism 110 on the side of the case 4, and the power transmission shaft 41, and the case 4 is rotationally driven. . That is, when the electromagnetic clutch 125 is on, the magnetic shield plate 5 rotates together with the case 4, and when the electromagnetic clutch 125 is off, the case 4 stops. Also, at the stop position, it is held at the stop position by the electromagnetic brake 126 . As a result, the main sputtering process and the pre-sputtering process can be switched by the on/off timing of the electromagnetic clutch 125 .

Next, the action of the film forming apparatus 1 will be described.

The film forming apparatus 1 controls the motor 130 of the driving source, the target driving mechanism 11, and the electromagnetic clutch 125 and the electromagnetic brake 126 of the shielding member driving mechanism 12 by the control unit 14 to rotate the magnetic shielding plate 5 to rotate the magnetic shielding plate. 5 can be changed. Thereby, the film forming apparatus 1 performs switching control between a main sputtering mode for forming a film on the film forming object 6 and a pre-sputtering mode for cleaning the surface of the target 2 . In other words, the film forming apparatus 1 is switchable between a first operation mode corresponding to the pre-sputtering mode and a second operation mode corresponding to the main sputtering mode. Here, the first operation mode is a state in which the magnetic shielding plate 5 is arranged on the side opposite to the film formation area A0, that is, the magnet unit 3 is positioned between the magnetic shielding plate 5 and the film formation area A0 (or the film formation target). This is an operation mode in which discharge is performed while being placed between the object 6). The second operation mode is a state in which the magnetic shielding plate 5 is arranged on the film formation area A0 side, that is, the magnetic shielding plate 5 is positioned between the magnet unit 3 and the film formation area A0 (or the film formation object 6). This is an operation mode in which discharge is performed while the battery is placed between

The pre-sputter mode is a process of shielding the magnetic field generation in the first area A1 and generating a magnetic field in the second area A2 to clean the surface of the target 2. FIG. This sputtering mode is a step of shielding the generation of the magnetic field in the second area A2, generating the magnetic field in the first area A1, and sputtering the target 2 to deposit target particles on the film-forming object 6. be.

(Pre-sputtering process)
In the pre-sputtering step, the motor 130 is rotated, the electromagnetic clutch 125 is turned on to drive the belt transmission mechanism 120 of the case drive mechanism 12, the magnetic shield plate 5 is rotated together with the case 4, and the first magnet for main sputtering is rotated. Move to the first shielding position (I) covering unit 3A. During this time, the belt transmission mechanism 110 of the target drive mechanism 11 is also driven by the motor 130, and the target continues to rotate. When the magnetic shielding plate 5 reaches the first shielding position (I), the electromagnetic clutch 125 is turned off, and at the same time the electromagnetic brake 126 is turned on to hold the stop position and apply a bias voltage from the power supply. When a bias voltage is applied, the magnetic shielding plate 5 blocks the generation of the magnetic field in the first area A1, and the magnetic field in the second area A2 is generated by the second magnet unit 3B. Plasma P is generated intensively in the vicinity of the target surface on the 3B side, gas ions in the plasma state collide with the target 2, and oxides and the like on the target surface are scattered, and the surface of the target 2 is cleaned. After the pre-sputtering is performed for a predetermined time and the surface of the target 2 is cleaned, the main sputtering is started.

(Main sputtering process)
In this sputtering step, the motor 130 is rotated, the electromagnetic brake 126 is released, the electromagnetic clutch 125 is turned on, the belt transmission mechanism 120 of the case drive mechanism 12 is driven, and the magnetic shielding plate 5 is rotated together with the case 4. , to the second shielding position (II) covering the second magnet unit 3B for pre-sputtering. During this time, the belt driving mechanism 110 of the target driving mechanism 11 is also driven by the motor 130, and the target 2 continues to rotate. When the magnetic shielding plate 5 reaches the second shielding position (II), the electromagnetic clutch 125 is turned off, the stop position is held by the electromagnetic brake 126 , and a bias voltage is applied from the power supply 13 .

When a bias potential is applied, the magnetic shielding plate 5 blocks the generation of the magnetic field in the second area A2, and the magnetic field in the first area A1 is generated by the first magnet unit 3A. Plasma P is generated intensively near the surface of the target on the magnet unit side, gas ions in the plasma state sputter the target 2, and scattered sputtered particles are deposited on the film-forming object 6 to form a film.

As described above, according to the present embodiment, the magnetic shield plate 5, which is relatively lightweight and easy to drive, can be moved without rotating the magnet unit 3 or retracting the rotary cathode 8. Since pre-sputtering can be performed, pre-sputtering can be easily performed with high productivity.

(Another Configuration Example of Target Driving Mechanism and Shielding Plate Driving Mechanism)
FIG. 5 is a schematic perspective view showing another configuration example of the target driving mechanism 11 and the shielding plate driving mechanism 12. As shown in FIG. Since the configuration is basically the same as that shown in FIG. 4, only different points will be mainly described, and the same reference numerals will be assigned to the same components, and description thereof will be omitted.

In the above configuration, the magnetic shielding plate 5 is fixed to the case 4, and the magnetic shielding plate 5 rotates together with the case 4. and the case 4 are configured to rotate independently.

That is, the power transmission shaft 21 of the target 2 is a cylindrical hollow shaft, and the fixed shaft 401 of the case 4 protrudes from the power transmission shaft 21 of the target 2 toward the end block 200 through the hollow hole. The fixed shaft 401 of the case 4 is also a hollow shaft, and the power transmission shaft 501 of the magnetic shield plate 5 protrudes toward the end block 200 through the hollow hole. The power transmission shaft 21 of the target 2 protrudes from the center of the end plate 22 fixed to the end of the target 2 , and the fixed shaft 401 of the case 4 protrudes from the center of the end plate 42 of the case 4. there is Also, the power transmission shaft 501 of the magnetic shielding plate 5 is connected to the center of the circular end plate 502 of the magnetic shielding plate 5 .

On the other hand, on the support block 300 side, driven side rotating shafts 24 and 504 provided at the ends of the target 2 and the magnetic shielding plate 5 are rotatably supported by the support block 300 unlike the above embodiment. The driven-side rotating shaft 504 of the magnetic shielding plate 5 does not have to pass through the driven-side rotating shaft 24 of the target 2 , and the driven-side rotating shaft 504 of the magnetic shielding plate 5 does not have to pass through the fixed shaft 401 of the case 4 . may

Next, another embodiment of the present invention will be described. In the following description, only differences from the first embodiment will be mainly described, and the same components will be denoted by the same reference numerals, and the description thereof will be omitted.

[Embodiment 2]
FIG. 6 shows a film forming apparatus 101 according to Embodiment 2 of the present invention. In the film forming apparatus 101 according to the second embodiment, the magnetic force of the magnet unit 3 in the rotary cathode 8 is set so that the magnetic force of the first magnet unit 3A on the front side facing the film forming object 6 is on the side opposite to the film forming object 6. is set stronger than the magnetic force of the second magnet unit 3B.

By doing so, the density of plasma formed near the surface of the target 2 in the pre-sputtering mode can be made smaller than the density of plasma formed near the surface of the target 2 in the main sputtering mode. Therefore, according to the present embodiment, in addition to the effects of the first embodiment, excessive material consumption during pre-sputtering can be suppressed.

[Embodiment 3]
FIG. 7 shows a film forming apparatus 102 according to Embodiment 3 of the present invention. In the film deposition apparatus 102 according to the third embodiment, the interior of the chamber 10 is divided into a first area A1 for depositing a film on the film deposition object 6 and a second area A2 different from the first area A1. A partition member 400 is provided for partitioning.

The first area A1 is an area where plasma is generated during main sputtering, and the second area A2 is an area where plasma is generated during pre-sputtering. The film forming apparatus 102 has a first gas introduction port 71 for introducing gas into the first area A1 and a second gas introduction port 72 for introducing gas into the second area A2. , and each gas introduction port 71, 72 may be connected to another gas supply source. Different types of gases may be supplied from the respective gas introduction ports 71 and 72 .

The partition member is L-shaped and includes a pair of horizontal plate portions 401 on the left and right sides of the rotary cathode along a horizontal plane passing through the central axis of the rotary cathode, and a vertically extending support plate portion 402 supporting the horizontal plate portions 401. It is composed of a plate material bent into a shape. The support plate portion 402 is fixed to the inner wall surface of the chamber 10, and is configured such that the end of the horizontal plate portion 401 on the rotary cathode 8 side faces the side surface of the target with a minute gap therebetween. Note that the horizontal plate portion 401 may be directly fixed to the wall of the chamber 10 .

By partitioning the first area A1 and the second area A2 in this way, it is possible to suppress the influence of adhesion of scattered particles such as oxide particles during pre-sputtering to the object to be film-formed.

[Other embodiments]
The present invention is not limited to the above-described embodiments, and various configurations can be employed without departing from the scope of the present invention.

For example, although the case where the magnetic shield plate is arranged inside the case together with the magnet unit has been described, it may be arranged in the gap between the outer circumference of the case and the inner circumference of the target.

In the above embodiment, the size of the magnetic shielding plate is almost semicircular in cross section, and the size covers the range of 180° of the cylindrical target, but is not limited to 180°. do not have. A size that covers a range of 90° to 270° of the cylindrical target is preferable, and a size that covers a range of 150° to 210° is more preferable.

Further, in the above embodiment, the magnetic shielding plate is composed of one magnetic plate, but it may be composed of two stacked magnetic plates, and the number of magnetic shielding plates is not limited to one.

Furthermore, in the magnet unit 3, only one second magnet unit 3B for pre-sputtering is arranged on the opposite side of the first magnet unit 3A facing the film-forming object 6 by 180°. A plurality of second magnet units 3B may be provided. In this case, the plurality of second magnet units 3B may be arranged facing different directions.

Further, in the above-described embodiment, the case where there is one rotary cathode 8 is illustrated, but a film forming apparatus in which a plurality of rotary cathodes 8 are arranged inside the chamber 10 is also applicable.

1 film deposition device 2 target 3 magnet unit (magnetic field generating means)
5 Magnetic shielding plate 6 Film-forming object 10 Chamber 11 Target driving device (target driving means)
12 Shield drive device (shield drive means)

Claims (17)

a chamber in which a film-forming object and a cylindrical target are arranged;
a magnetic field generating means provided inside the target for generating a magnetic field leaking from the outer peripheral surface of the target;
A film formation apparatus comprising target driving means for rotating the target,
a magnetic shielding member movably provided between the magnetic field generating means and the inner peripheral surface of the target;
Shielding member driving means for driving the magnetic shielding member;
a control means for switching between a main sputtering mode in which a film is formed on the film-forming object and a pre-sputtering mode in which the surface of the target is cleaned by moving the magnetic shielding member by the shielding member driving means; A film forming apparatus characterized by: 2. The film forming apparatus according to claim 1, wherein said shielding member driving means is means for rotating said magnetic shielding member coaxially with said target. 3. The film forming apparatus according to claim 1, wherein the magnetic shielding member is an arch-shaped plate member. The film forming apparatus according to any one of claims 1 to 3, wherein the magnetic shielding member is a plate member having an arcuate cross-sectional shape perpendicular to the longitudinal direction of the target. 5. The film forming apparatus according to claim 3, wherein the magnetic shielding member is a semi-cylindrical plate member. 6. The film forming apparatus according to claim 1, wherein the magnetic shielding member is made of a ferromagnetic material. 7. The magnetic field generator according to any one of claims 1 to 6 , wherein the magnetic field generating means is means for generating magnetic fields in both a direction toward the film formation object and a direction away from the film formation object. The film forming apparatus according to the item. The magnetic field generating means includes a first magnet unit that generates a magnetic field in a direction toward the film formation object, and a second magnet unit that generates a magnetic field in a direction away from the film formation object. The film forming apparatus according to claim 7 . It further comprises a partition member for partitioning the interior of the chamber into a first region for forming a film on the film formation object and a second region different from the first region. The film forming apparatus according to any one of claims 1 to 8 . 10. The film formation according to any one of claims 1 to 9 , wherein the magnetic field generating means is housed in a sealed case inside the target, and the magnetic shielding member is mounted in the case. Device. a cathode unit having the magnetic field generating means and the magnetic shielding member, wherein the targets are arranged in such a manner that the magnetic field generating means and the magnetic shielding member are arranged in the chamber; 11. The film forming apparatus according to any one of claims 1 to 10 , comprising a plurality of film forming apparatuses. a chamber in which a film-forming object and a cylindrical target are arranged;
a magnetic field generating means provided inside the target for generating a magnetic field leaking from the outer peripheral surface of the target;
A film formation apparatus comprising target driving means for rotating the target,
a magnetic shielding member provided between the magnetic field generating means and the inner peripheral surface of the target so as to be rotatable coaxially with the target;
Shielding member driving means for rotationally driving the magnetic shielding member;
a control means for switching between a main sputtering mode in which a film is formed on the film-forming object and a pre-sputtering mode in which the surface of the target is cleaned by moving the magnetic shielding member by the shielding member driving means; A film forming apparatus characterized by: a chamber in which a film-forming object and a cylindrical target are arranged;
a magnetic field generating means provided inside the target for generating a magnetic field leaking from the outer peripheral surface of the target;
A film forming apparatus for forming a film on the object to be film-formed arranged in a film-forming area in the chamber, comprising target driving means for rotating the target,
a magnetic shielding member movably provided between the magnetic field generating means and the inner peripheral surface of the target;
a first operation mode in which the magnetic field generating means is arranged between the magnetic shielding member and the film formation area and discharges;
a second operation mode in which the magnetic shielding member is arranged between the magnetic field generating means and the film formation area and discharges;
A film forming apparatus characterized in that it has a switchable. having shielding member driving means for driving the magnetic shielding member;
14. The film forming apparatus according to claim 13 , wherein switching between the first operation mode and the second operation mode is performed by moving the magnetic shielding member by the shielding member driving means. A method for manufacturing an electronic device, including a sputtering film forming step of placing a film-forming object in a chamber and depositing sputtered particles flying from a cylindrical target arranged facing the film-forming object to form a film. and
A magnetic field generating means arranged inside the target generates a magnetic field in both a first direction toward the film-forming object and a second direction away from the film-forming object from the magnetic field generating means. let
a pre-sputtering step of discharging while rotating the target while shielding the magnetic field generated in the first direction;
a main sputtering step of discharging while rotating the target while shielding the magnetic field generated in the second direction;
A method of manufacturing an electronic device, comprising: 16. The method of manufacturing an electronic device according to claim 15 , wherein said pre-sputtering step is a step of cleaning the outer surface of said target. 17. The method of manufacturing an electronic device according to claim 16 , wherein the main sputtering step is a step of depositing the sputtered particles on the object to be film-formed by sputtering the target whose surface has been cleaned. .

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