CN114664621A

CN114664621A - Inductively coupled plasma apparatus and method of operating the same

Info

Publication number: CN114664621A
Application number: CN202011536346.5A
Authority: CN
Inventors: 廖耕颍; 董怀仁; 林子平; 陈柏仁; 陈明凯; 陈希贤; 苏明宏; 林玉珠; 任啟中
Original assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Current assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date: 2020-12-23
Filing date: 2020-12-23
Publication date: 2022-06-24

Abstract

An inductively coupled plasma apparatus and a method for operating the same are provided, the method for operating the inductively coupled plasma apparatus comprising: disposing a first magnetic shielding element adjacent to a first side of a reaction chamber; when the first magnetic shielding element is arranged adjacent to the first side of the reaction chamber, a first plasma process is performed; removing the first magnetic field shielding element from the first side of the chamber after the first plasma process is performed; and performing a second plasma process after removing the first magnetic field shielding element from the first side of the chamber.

Description

Inductively coupled plasma apparatus and method of operating the same

Technical Field

The present disclosure relates to an inductively coupled plasma apparatus and a method of operating the same.

Background

In recent years, semiconductor integrated circuits (semiconductor integrated 1-d circuits) have undergone exponential growth. With advances in integrated circuit materials and design techniques, multiple generations of integrated circuits are produced, with each generation having smaller, more complex circuits than the previous generation. As integrated circuits are developed, the functional density (i.e., the number of interconnected devices per chip area) typically increases as the geometries (i.e., the smallest elements or lines that can be produced during the fabrication process) shrink.

Generally, such a downscaling process provides the benefits of increased production efficiency and reduced manufacturing cost, however, the downscaling process also increases the complexity of manufacturing and producing integrated circuits. In order to realize these advances, corresponding developments in integrated circuit fabrication processes and manufacturing equipment are needed. In one example, a plasma etching process of a substrate is performed using a plasma manufacturing system. In a plasma etching process, a plasma generates volatile etching products by chemical reaction between elements of a material being etched from a surface of a substrate and reactive species generated by the plasma.

Disclosure of Invention

Some embodiments of the present disclosure provide a method of operating an inductively coupled plasma apparatus. The method comprises the following steps: disposing a first magnetic shielding element adjacent to a first side of a reaction chamber; when the first magnetic shielding element is arranged adjacent to the first side of the reaction chamber, a first plasma process is performed; removing the first magnetic field shielding element from the first side of the chamber after the first plasma process is performed; and performing a second plasma process after removing the first magnetic field shielding element from the first side of the chamber.

Some embodiments of the present disclosure provide a method of operating an inductively coupled plasma apparatus, comprising: disposing a first magnetic shielding element adjacent to a first side of a reaction chamber; when the first magnetic shielding element is disposed adjacent to the first side of the reaction chamber, performing a first plasma process; after the first plasma process is performed, a second magnetic shielding element is disposed adjacent to the first side of the reaction chamber; and performing a second plasma process when the first magnetic field shielding element and the second magnetic field shielding element are disposed adjacent to the first side of the chamber.

Some embodiments of the present disclosure provide an inductively coupled plasma apparatus. The inductively coupled plasma apparatus includes a reaction chamber, a wafer pedestal, a first magnetic field shielding element, and a second magnetic field shielding element. The reaction chamber has a body and a dielectric plate, wherein the body and the dielectric plate define a space. The wafer pedestal is disposed in the reaction chamber for carrying a substrate. The first magnetic field shielding element is detachably arranged on the outer surface of the body. The second magnetic field shielding element is detachably arranged on the outer surface of the body.

Drawings

Aspects of the present disclosure can be understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that the various features are not drawn to scale as is standard in industry practice. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a schematic cross-sectional view of an inductively coupled plasma apparatus according to some embodiments of the present disclosure;

FIG. 2 is a perspective view of an inductively coupled plasma apparatus according to some embodiments of the present disclosure;

FIG. 3 is a perspective view of an inductively coupled plasma apparatus according to some embodiments of the present disclosure;

FIG. 4 is a schematic perspective view of an inductively coupled plasma apparatus according to some embodiments of the present disclosure;

FIG. 5 is a flow chart of a method of operating an inductively coupled plasma apparatus in accordance with some embodiments of the present disclosure;

FIGS. 6A-6B are schematic diagrams of a method of operating an inductively coupled plasma apparatus at various stages according to some embodiments of the present disclosure;

FIG. 7 is a flow chart of a method of operating an inductively coupled plasma apparatus according to some embodiments of the present disclosure;

FIGS. 8A-8J are schematic diagrams of a semiconductor device at various stages of its manufacture according to some embodiments of the present disclosure;

FIG. 9 is a schematic view of a semiconductor processing tool in accordance with some embodiments of the present disclosure.

[ notation ] to show

100 inductively coupled plasma apparatus

110 reaction chamber

110S closed space

112, main body

112OS outer surface

112GO gas outlet

114 dielectric plate

114O opening

116 plasma baffle

120 wafer pedestal

122 electrodes

130 coil

140 gas conveyer

150 cover body

150OS outer surface

160, fixing part

160H locking hole

162. 164 fixing part

160T slot

170 magnetic field shielding element

170H locking hole

170 LA-170 LF position arrangement

172. 174 magnetic field shielding element

172 a-172 d Main magnetic field Shielding element

172a 'to 172 d' secondary magnetic field shielding elements

180, ceramic supporting seat

190: terminal

200 semiconductor process machine

300 casing

300G wafer channel

910 semiconductor substrate

910R trench

912 active region

920 hard mask layer

922 hard mask

930 bottom anti-reflection layer

932 bottom anti-reflection layer

940 patterning the photoresist layer

950 shallow trench isolation region

960 gate dielectric layer

962 dielectric of grid

970 gate electrode layer

972 Gate electrode

980 hard mask layer

982 hard mask

990 bottom anti-reflection layer

992 bottom anti-reflection coating

1000 patterned photoresist layer

1100 Source/drain region

W is a substrate

M, N method

S1-S8, P1-P5

Ga. Ga ', Gb ', Gc ' gas

Pa, Pa ', Pb', Pc

OS outer surface

OSH locking hole

LP load port

TC equipment front end module

LC load lock chamber

BC buffer chamber

WP, wafer transport box

WI wafer entry chamber

WO wafer delivery chamber

A1, A2 mechanical arm

Detailed Description

The following disclosure will provide many different embodiments or examples to implement different features of the provided patent subject matter. Many components and arrangements are described below in order to simplify the present disclosure with regard to specific embodiments. These embodiments are, of course, merely examples and are not intended to limit the disclosure. For example, the statement that a first feature is formed over a second feature includes various embodiments, which encompass both a first feature being in direct contact with the second feature, and additional features being formed between the first and second features, such that direct contact between the two is not made. Moreover, in various embodiments, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and is not intended to in any way limit the scope of the various embodiments and/or configurations discussed.

Furthermore, spatially relative terms, such as "lower," "below," "beneath," "under," "upper," "over," and the like, may be used herein to describe a relationship of an element or feature to another element or feature as illustrated. In use or operation, the spatially relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. Alternatively, the devices may be rotated (90 degrees or at other angles) and the spatially relative descriptors used herein interpreted accordingly.

In inductively coupled plasma apparatus, a dielectric plate is disposed between the induction coil and the plasma, such as at the periphery or top of the chamber. A radio frequency current is input into the coil by using a radio frequency source to generate an induced radio frequency magnetic field, and then a radio frequency electric field which is opposite to the radio frequency current is induced in the cavity by the radio frequency magnetic field. Therefore, the radio frequency source can be responsible for generating plasma through inductive coupling and controlling the density of the plasma.

Fig. 1 is a cross-sectional view of an inductively coupled plasma apparatus 100, in accordance with some embodiments of the present disclosure. In some embodiments, the inductively coupled plasma apparatus 100 may be operable to perform a plasma etching process, such as plasma etching of metals, dielectrics, semiconductors, and/or masking materials (mask materials) from the surface of the substrate W. For example, it can be used in planar transistor fabrication to etch bottom anti-reflective coating (BARC), polysilicon, and mask. In some other embodiments, the inductively coupled plasma apparatus 100 is operable to perform a deposition process, such as plasma depositing metal, dielectric, semiconductor and/or masking materials on the surface of the substrate W. In some other embodiments, the inductively coupled plasma apparatus 100 is operable to perform a plasma process (treatment), such as plasma treatment of metal, dielectric, semiconductor and/or masking materials on the surface of the substrate W.

In some embodiments, the inductively coupled plasma apparatus 100 includes a reaction chamber 110, a wafer pedestal 120, a coil 130, a gas delivery device 140, a fixture 160, and a magnetic field shielding element 170.

In some embodiments, chamber 110 includes a body 112 and dielectric window 114. The body 112 and the dielectric plate 114 define a closed space 110S of the reaction chamber 110. In some embodiments, the enclosed space 110S of the reaction chamber 110 is insulated from the outside environment and can be maintained in a suitable state, such as a vacuum or a pressure lower than atmospheric pressure.

In some embodiments, the wafer pedestal 120 is disposed in the reaction chamber 110 and is used to support the substrate W. The wafer pedestal 120 may include an electrostatic chuck (not shown) and/or a clamping ring (not shown) to hold the substrate W during processing. The wafer pedestal 120 may also include cooling and/or heating elements (not shown) for controlling the temperature of the wafer pedestal 120. In some embodiments, the wafer pedestal 120 may further include an electrode 122 coupled to a Radio Frequency (RF) generator. During plasma processing, the electrode 122 may be biased above the RF voltage by the RF generator. The biased electrode 122 may be used to provide a bias to the incoming process gas and help excite it into a plasma. In addition, the electrode 122 may maintain a plasma during the plasma processing process.

In some embodiments, the coil 130 is disposed on the dielectric plate 114. The coil 130 is electrically coupled to a plasma RF power source (not shown). The dielectric plate 114 allows RF energy provided by the plasma power source to be transmitted from the coil 130 to the enclosed space 110S of the chamber 110. Thus, by using the coil 130 to transmit the RF energy to the enclosed space 110S of the chamber 110 through the dielectric plate 114, the process gas in the enclosed space 110S of the chamber 110 can form inductively coupled plasma, thereby performing etching, deposition, and/or other plasma processes on the substrate W. In some embodiments, the inductively coupled plasma apparatus 100 may optionally include a cover 150, wherein the cover 150 is used to cover the coil 130 and the dielectric plate 114 to prevent dust contamination.

In some embodiments, the dielectric plate 114 has an opening 114O for connecting to the gas delivery device 140. The gas delivery unit 140 is connected to a gas supply source (not shown) and is used to provide process gases or other suitable gases (e.g., cleaning gases, shielding gases, etc.) to the enclosed space 110S of the reaction chamber 110. In various embodiments, the process gas may be an etching gas, a deposition gas, a treatment gas, a carrier gas (e.g., nitrogen, argon, etc.), other suitable gases, and combinations thereof. The number of gas transporters 140 and openings 114O may be one or more. In some embodiments, the gas conveyor 140 and the opening 114O may be located substantially in the center of the coil 130. In some other embodiments, the gas conveyor 140 and the opening 114O may be disposed off-center of the coil 130. In some embodiments, the body 112 may include a gas outlet 112GO, which may be connected to a pump (not shown) to pump air from the enclosed space 110S.

In some embodiments, the magnetic field shielding element 170 may be selectively disposed on each outer surface 150OS of the cover 150 and each outer surface 112OS of the body 112. The material of the magnetic field shielding member 170 may be a suitable metal plate body capable of blocking an external magnetic field. For example, the material of the magnetic field shielding element 170 may be a transition metal or other suitable material. In some embodiments, the material of the magnetic field shielding element 170 may be a group iv to group iv metal. In some embodiments, the material of the magnetic field shielding element 170 may be molybdenum (Mo), iron (Fe), nickel (Ni), an alloy thereof, or a combination thereof.

In some embodiments, the magnetic field shielding element 170 may be fixed to the outer surfaces 112OS and 150OS through the fixing member 160. For example, the fixing member 160 may be fixed (e.g., locked) to the outer surface 112OS of the body 112 and/or the outer surface 150OS of the cover 150. The fixing member 160 may include one or more slots 160T for carrying the magnetic field shielding element 170. The combination of the outer surface 112OS of the body 112 and the outer surface 150OS of the cover 150 is referred to herein as the outer surface OS.

The magnetic field shielding element 170 may include a magnetic field shielding element 172 located at the side of the reaction chamber 110 and a magnetic field shielding element 174 located above the reaction chamber 110. The magnetic

field shielding elements

172, 174 may be separate from each other and can be independently selected to be disposed around the reaction chamber 110. The fixing member 160 may include a fixing member 162 disposed at a side of the reaction chamber 110 and a fixing member 164 disposed above the reaction chamber 110 for respectively carrying the magnetic

field shielding members

172 and 174.

By the arrangement of the fixing member 160 and the magnetic shielding element 170, an operator can adjust the distribution of the magnetic shielding element 170 around the chamber 110 according to the plasma process to be performed, so as to achieve the purpose of effectively isolating the geomagnetism. For example, different distributions of the magnetic field shielding device 170 may be used to perform various plasma processes.

In some embodiments of the present disclosure, when the magnetic shielding element 172 is disposed on the outer surface 112OS of the body 112, the upper surface of the magnetic shielding element 172 may be higher than the upper surface of the dielectric plate 114, and the lower surface of the magnetic shielding element 172 may be lower than the lower surface of the wafer pedestal 120. Specifically, the upper surface of the magnetic field shielding element 172 may be higher than the position of the coil 130, and the lower surface of the magnetic field shielding element 172 may be lower than the position of the lower surface of the electrode 122 in the wafer pedestal 120. Therefore, when the coil 130 is used to generate a magnetic field, the magnetic field shielding element 172 can surround the region between the coil 130 and the electrode 122, so as to prevent the geomagnetic field from affecting the plasma in the region. Thus, the plasma in this region can be effectively controlled by the coil 130 and the electrode 122 to achieve the target effect, such as uniform etching or non-uniform etching.

In some embodiments, in order to facilitate opening and closing of the cover 150 when maintaining the machine, the fixing elements 162 located at the lateral sides may be fixed only to the outer surface 112OS of the main body 112, rather than to the outer surface 150OS of the cover 150. For example, the fixing member 162 is directly fixed to the body 112, and not directly fixed to the cover 150. Therefore, the operation of the machine is not affected by the arrangement of the fixing member 162. In some embodiments, the fastener 162 may or may not contact the outer surface 150OS of the cover 150. In some embodiments, the fixing member 164 may be directly fixed to the upper surface of the cover 150.

In some embodiments, the magnetic shielding elements 170 (e.g., the magnetic shielding elements 172 in fig. 1) disposed on the same side of the reaction chamber 110 may be separated by the fixing elements 160 (e.g., the fixing elements 162 in fig. 1) without contacting each other. Alternatively, in some other embodiments, the magnetic field shielding elements 170 (e.g., the magnetic field shielding elements 172 in fig. 1) disposed on the same side of the reaction chamber 110 may not be separated by the fixing member 160. In other words, in some other embodiments, the magnetic field shielding elements 170 (e.g., the magnetic field shielding elements 172 in fig. 1) disposed on the same side of the reaction chamber 110 may contact each other.

In some embodiments, the substrate W may be a silicon wafer. In other embodiments, the substrate W may comprise other elemental (or compound) semiconductor materials, alloy semiconductor materials or other semiconductor wafers, and other suitable substrates. For example, compound semiconductor materials include, but are not limited to, silicon carbide, gallium arsenide, gallium phosphide, indium arsenide, and/or indium antimonide. For example, alloy semiconductor materials include, but are not limited to, SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP.

In some embodiments, the dielectric plate 114 may be made of quartz, ceramic, and/or dielectric material that is transparent to electromagnetic signals. The electromagnetic signal may be visible light, infrared light, ultraviolet light, X-ray light, and/or other electromagnetic signals. The electromagnetic signal through the dielectric plate 114 may be used to monitor the process conditions in the enclosed space 110S, such as the presence of plasma, the presence of process gas species, and/or the presence of etch/deposition residue material. The dielectric plate body 114 may comprise a suitable shape, such as a round plate, a square plate, or other suitable shape. In some embodiments, the dielectric plate 114 may be transparent. In some embodiments, the dielectric plate 114 may also be referred to as a dielectric window.

In some embodiments, the coil 130 may be a planar multi-turn helical coil (non-planar multi-turn helical coil), a non-planar multi-turn helical coil (planar multi-turn helical coil), or a coil with other suitable shapes. In some embodiments, the coil 130 may form a plasma antenna. In other embodiments, the plasma antenna may comprise a plurality of plates adapted for capacitively coupled plasma (capacitively coupled plasma). In other embodiments, the plasma may be sustained by other plasma antennas, such as an Electron Cyclotron Resonance (ECR), parallel plate, spiral (helicon), spiral resonator (helicon), or other plasma antennas. The plasma power ES may be, for example, a Radio Frequency (RF) power.

In some embodiments, the inductively coupled plasma apparatus 100 may further include a ceramic support pedestal 180 for supporting the inner and outer coils of the coil 130. For example, the coil 130 may be fixed to the ceramic support base 180 by suitable means (e.g., screws). The ceramic support pedestal 180 may include suitable openings for the gas feed 140 to pass through. In some embodiments, the inductively coupled plasma apparatus 100 may further include a terminal 190, wherein the coil 130 is connected to the plasma rf power source through the terminal 190.

In some embodiments, the inductively coupled plasma apparatus 100 may further include a plasma baffle 116 to confine the plasma around the substrate W and to allow process gases and process byproducts to be transported through the plasma baffle 116 to the gas outlet 112GO for exhaust. The plasma baffle 116 may be coated with an Alternative Chamber Material Evaluation (ACME) film, wherein the film may comprise an aluminum material, such as anodized aluminum, and the film may be configured to reduce defects.

Fig. 2 is a perspective view of an inductively coupled plasma apparatus 100 according to some embodiments of the present disclosure. In the embodiment of the present disclosure, the fixing members 160 may be disposed on the upper, lower, left, right, front and rear sides of the outer surface OS (including the outer surface 112OS of the body 112 and the outer surface 150OS of the cover 150), so that the magnetic field shielding member 170 may be disposed outside the reaction chamber 110 as required.

For example, in some embodiments, the magnetic field shielding elements 172 include primary magnetic field shielding elements 172a to 172d and secondary magnetic field shielding elements 172a 'to 172 d' disposed on four sides of the reaction chamber 110. The magnetic field shielding elements 172 a-172 d and the secondary magnetic field shielding elements 172a '-172 d' can be separated from each other and can be independently selected to be disposed around the reaction chamber 110. In some embodiments, the primary magnetic field shielding elements 172 a-172 d and the secondary magnetic field shielding elements 172a '-172 d' are shaped and sized to match the structure of other components of the inductively coupled plasma apparatus 100. For example, the secondary magnetic field shielding elements 172a '-172 d' may have dimensions that are smaller than the dimensions of the magnetic field shielding elements 172 a-172 d.

In some embodiments, the magnetic shielding element 170 may have a plurality of locking holes 170H, and the outer surface OS may have a plurality of corresponding locking holes OSH for fixing the magnetic shielding element 170 to the outer surface OS. The magnetic field shielding element 170 may be fixed to the outer surface OS through another fixing member (refer to the fixing member 160 of fig. 1). Alternatively, in other embodiments, the magnetic field shielding element 170 may be directly fixed to the magnetic field shielding element 170 without any other fixing member therebetween. Other details of this embodiment are substantially as described above and will not be described herein.

Fig. 3 is a perspective view of an inductively coupled plasma apparatus 100 according to some embodiments of the present disclosure. As shown in fig. 3, the fixing member 160 may be fixed to the outer surface OS of the inductively coupled plasma apparatus 100 by a screw locking method. For example, the fixing member 160 may be provided with a plurality of locking holes 160H, so that the locking holes 170H of the magnetic field shielding member 170 can be locked to the locking holes OSH of the outer surface OS through screws passing through the locking holes 160H. Therefore, the magnetic field shielding element 170 can also be fixed in the slot 160T of the fixing member 160 by a screw locking method. Other details of this embodiment are substantially as described above and will not be described herein.

Fig. 4 is a perspective view of an inductively coupled plasma apparatus 100 according to some embodiments of the present disclosure. In this embodiment, a housing 300 may be disposed around the body 112 (refer to fig. 1), and the material of the housing 300 may be a metal material capable of blocking an external magnetic field. For example, the material of the housing 300 may be a transition metal or other suitable material. In some embodiments, the material of the housing 300 may be a group iv to group iv metal. In some embodiments, the material of the housing 300 may be molybdenum (Mo), iron (Fe), nickel (Ni), an alloy thereof, or a combination thereof. Therefore, the magnetic field generated by the geomagnetic image coil can be further prevented. In some embodiments, the body 112 (see fig. 1) surrounding the enclosed space 110S may be opened with a wafer passage for facilitating wafer transfer. The housing 300 may also define a wafer passage 300G in communication with the wafer passage of the body 112 (see fig. 1) for facilitating wafer transfer. The magnetic shielding element 170 may be disposed on the body 112 (refer to fig. 1) and on both sides of the housing 300 where the wafer passage is not disposed. In some embodiments, the body 112 (see fig. 1) and the side of the housing 300 not provided with the wafer via may be free of the magnetic shielding element 170 and the fixing element 160 (see fig. 1). Alternatively, in other embodiments, the body 112 (see fig. 1) and the side of the housing 300 where the wafer passage is formed may be provided with the magnetic field shielding element 170 and the fixing member 160 (see fig. 1) having the same size. Other details of the present embodiment are substantially as described above, and are not described herein again.

FIG. 5 is a flow chart of a method M of operating an inductively coupled plasma apparatus according to some embodiments of the present disclosure. Fig. 6A-6B are schematic diagrams of a method M of operating an inductively coupled plasma apparatus at various stages according to some embodiments of the present disclosure. This description is intended for purposes of illustration only and is not intended to further limit the content of the claims that follow. The method M includes steps S1-S8. It should be understood that additional steps may be added before, during and after steps S1-S8, and that some of the steps mentioned below may be replaced or eliminated for another portion of the method embodiments. The order of steps/procedures may be changed.

First, referring to fig. 5 and 6A, the method proceeds to step S1, where an inductively coupled plasma apparatus 100 is provided and a plurality of magnetic field shielding elements 170 are adjusted to a first positional configuration. For example, the magnetic shielding elements 170 are disposed on the four sides and the top and bottom sides of the periphery of the reaction chamber 110. In the case of the first position arrangement, the magnetic field shielding elements 172a to 172b, 172a 'to 172 b' on the four sides of the reaction chamber 110, and the magnetic field shielding elements 174 on the upper and lower sides of the reaction chamber 110 may be arranged in a predetermined number, shape, or the like. For example, the number of the magnetic field shielding elements 172a to 172b and 174 is 3, 2, 1, 4 and 1, respectively.

Next, referring to fig. 5 and 6A, the method proceeds to step S2, where the first wafer is placed into the chamber after adjusting the plurality of magnetic shielding elements 170 to the first position configuration. Alternatively, in some other embodiments, the order of steps S1 and S2 may be reversed, and is not limited to the illustration. For example, the plurality of magnetic field shielding devices 170 may be adjusted to the first position configuration after the first wafer is placed in the chamber.

Next, the method proceeds to step S3, and the inductively coupled plasma apparatus 100 is used to perform an appropriate plasma process on the wafer, such as a plasma etching process, a plasma deposition process, or a plasma treatment process. In the present embodiment, the plasma process includes using the gas transporter 140 (see FIG. 1) to transport the process gas into the enclosed space 110S, and using the coil 130 (see FIG. 1) to transfer energy into the enclosed space 110S, thereby boosting the energy of the process gas to generate and/or maintain the plasma. In some embodiments, the plasma process may be anisotropic or isotropic.

Then, referring to fig. 5 and 6A, the method proceeds to step S4, after a plasma process is performed on the wafer, the wafer is removed from the chamber and a next wafer is placed in the enclosed space 110S of the chamber 110, and the plasma process is performed on the next wafer.

After performing the plasma processes on a plurality of wafers (e.g., a plurality of wafers in the same lot), referring to fig. 5 and 6B, the method proceeds to step S5, where the magnetic shielding element 170 is adjusted to the second position configuration. For example, the number of the magnetic shielding elements 170 disposed on any one of the four sides and the top and bottom of the periphery of the reaction chamber 110 can be increased, for example, the magnetic shielding elements 170 are disposed on any one of the four sides and the top and bottom of the periphery of the reaction chamber 110. Alternatively, in some examples, the number of the magnetic field shielding elements 170 located on any of the four sides and the top and bottom of the periphery of the reaction chamber 110 may be reduced, for example, the magnetic field shielding elements 170 located on any of the four sides and the top and bottom of the periphery of the reaction chamber 110 may be removed. In the case of the second position arrangement, the magnetic field shielding elements 172a to 172b, 172a 'to 172 b' on the four sides of the reaction chamber 110, and the magnetic field shielding elements 174 on the upper and lower sides of the reaction chamber 110 may be arranged in a predetermined number, shape, or the like. For example, the number of the magnetic field shielding elements 172a to 172b, 174 is 2, 4, 1, 5, 1, respectively.

In some embodiments, the magnetic field shielding element 170 disposed on either side of the reaction chamber 110 may be removed when adjusting the magnetic field shielding element 170 to the second position configuration. Alternatively, in some other embodiments, the magnetic field shielding element 170 disposed on either side of the reaction chamber 110 may be moved to the other side. Alternatively, in some embodiments, the number of magnetic field shielding elements 170 disposed on either side of the reaction chamber 110 may be increased.

Next, referring to fig. 5 and 6B, the method proceeds to step S6, where after the plurality of magnetic field shielding elements 170 are adjusted to the second position configuration, the second wafer is placed in the reaction chamber. Alternatively, in some other embodiments, the order of steps S5 and S6 may be reversed, and is not limited to the illustration. For example, the plurality of magnetic field shielding elements 170 may be adjusted to the second position configuration after the second wafer is placed in the chamber.

Next, the method proceeds to step S7, and the inductively coupled plasma apparatus 100 is operated to perform an appropriate plasma process on the second wafer, such as a plasma etching process, a plasma deposition process, or a plasma treatment process. In the present embodiment, the plasma process includes using the gas transporter 140 (see FIG. 1) to transport the process gas into the enclosed space 110S, and using the coil 130 (see FIG. 1) to transfer energy into the enclosed space 110S, thereby boosting the energy of the process gas to generate and/or maintain the plasma. In some embodiments, the plasma process may be anisotropic or isotropic.

Then, referring to fig. 5 and 6B, the method proceeds to step S8, after a plasma process is performed on the wafer, the wafer is removed from the chamber and a next wafer is placed in the enclosed space 110S of the chamber 110, and the plasma process is performed on the next wafer (e.g., a plurality of wafers in the same step).

In some embodiments of the present disclosure, the operator may select an appropriate configuration of the magnetic field shielding element 170 according to the requirements of the plasma process. For example, the magnetic field shielding element 170 is disposed in the second plasma process differently from the first plasma process. In fig. 5, although the first plasma process and the second plasma process are performed on the first wafer and the second wafer, respectively, as an example, the scope of the disclosure should not be limited thereto. In other embodiments, the first plasma process and the second plasma process may be performed on the same wafer.

FIG. 7 is a flow chart of a method N of operating an inductively coupled plasma apparatus in accordance with some embodiments of the present disclosure. Fig. 6A-6B are schematic diagrams of a method M of operating an inductively coupled plasma apparatus at various stages according to some embodiments of the present disclosure. This description is intended for purposes of illustration only and is not intended to further limit the content of the claims that follow. Method N includes steps P1-P6. It should be understood that additional steps may be added before, during and after steps P1-P6, and that some of the steps mentioned below may be replaced or eliminated for another portion of the method embodiments. The order of steps/procedures may be changed.

Referring to fig. 7 and 6A, the method proceeds to step P1 where a first wafer is placed into the chamber of the inductively coupled plasma apparatus 100.

Next, the method proceeds to step P2, where the plurality of magnetic field shielding elements 170 are adjusted to the first position configuration. For example, the magnetic shielding elements 170 are disposed on the four sides and the top and bottom sides of the periphery of the reaction chamber 110. In the case of the first position arrangement, the magnetic field shielding elements 172a to 172b, 172a 'to 172 b' on the four sides of the reaction chamber 110, and the magnetic field shielding elements 174 on the upper and lower sides of the reaction chamber 110 may be arranged in a predetermined number, shape, or the like. For example, the number of the magnetic field shielding elements 172a to 172b and 174 is 3, 2, 1, 4 and 1, respectively. The order of the steps P1 and P2 can be exchanged, and is not limited to the order shown in the figure. For example, the plurality of magnetic field shielding elements 170 may be adjusted to the first positional configuration before or after the first wafer is placed in the chamber.

The method proceeds to step P3, and the inductively coupled plasma apparatus 100 is operated to perform a suitable plasma process on the wafer, such as a plasma etching process, a plasma deposition process, or a plasma treatment process.

Next, referring to fig. 7 and fig. 6B, the method proceeds to step P4, where the magnetic field shielding elements 170 are adjusted to the second position configuration. For example, the number of the magnetic shielding elements 170 located on any one of the four sides and the top and bottom of the periphery of the reaction chamber 110 can be increased, for example, the magnetic shielding elements 170 are added on any one of the four sides and the top and bottom of the periphery of the reaction chamber 110. Alternatively, in some examples, the number of the magnetic field shielding elements 170 located on any of the four sides and the top and bottom of the periphery of the reaction chamber 110 may be reduced, for example, the magnetic field shielding elements 170 located on any of the four sides and the top and bottom of the periphery of the reaction chamber 110 may be removed. In the case of the second position arrangement, the magnetic field shielding elements 172a to 172b, 172a 'to 172 b' on the four sides of the reaction chamber 110, and the magnetic field shielding elements 174 on the upper and lower sides of the reaction chamber 110 may be arranged in a predetermined number, shape, or the like. For example, the number of the magnetic field shielding elements 172a to 172b, 174 is 2, 4, 1, 5, 1, respectively.

Next, the method proceeds to step P5, and the inductively coupled plasma apparatus 100 is operated to perform an appropriate plasma process on the wafer, such as a plasma etching process, a plasma deposition process, or a plasma treatment process.

Fig. 8A-8J are schematic diagrams of a semiconductor device at various stages of processing according to some embodiments of the present disclosure. This description is intended for purposes of illustration only and is not intended to further limit the content of the claims that follow. It should be understood that additional steps may be added before, during, and after the steps of fig. 8A-8J, and that some of the steps mentioned below may be replaced or eliminated for another portion of the method embodiments. The order of steps/procedures may be changed.

Referring to fig. 8A, a hard mask layer 920, a bottom anti-reflection coating (BARC) 930 and a patterned photoresist layer 940 are formed on a semiconductor substrate 910. In some embodiments, the patterned photoresist layer 940 may comprise an appropriate organic material. In some embodiments, the patterned photoresist layer 940 is formed by coating a photoresist layer on the bottom anti-reflective layer 930 and performing a photolithography process (e.g., exposing and developing) on the photoresist layer.

In some embodiments, the semiconductor substrate 910 may comprise a suitable semiconductor material, such as silicon (Si), germanium (Ge), silicon carbide (SiC), silicon germanium (SiGe), or combinations thereof. In some embodiments, the semiconductor substrate 910 is, for example, bulk silicon. In some embodiments, the semiconductor substrate 910 may be a Silicon On Insulator (SOI) substrate, a multilayer substrate, a gradient substrate, or a hybrid orientation substrate.

In some embodiments, the hard mask layer 920 may comprise a multi-layer dielectric material, which may be a silicon carbide-silicon oxide-silicon carbide tri-layer structure. Alternatively, in some embodiments, the hard mask layer 920 may comprise a silicon carbide layer. In some embodiments, the bottom anti-reflective layer 930 may comprise a suitable organic or inorganic dielectric material, such as silicon carbide (SiC). The bottom anti-reflective layer 930 may reduce reflective interference of the underlying features when exposing the photoresist layer.

Referring to FIG. 8B, a plasma etching process is performed using the inductively coupled plasma apparatus 100 to remove the portion of the bottom anti-reflective layer 930 not covered by the patterned photoresist layer 940, thereby forming the bottom anti-reflective layer 932. Specifically, the semiconductor substrate 910 is placed on a wafer pedestal (refer to the wafer pedestal 120 of FIG. 1), and the gas conveyor 140 is controlled to introduce a gas Ga to generate a plasma Pa to etch the portion of the bottom anti-reflection layer 930 (refer to FIG. 8A) not covered by the patterned photoresist layer 940. In the plasma etching process, the magnetic field shielding element 170 (refer to fig. 1-4 or fig. 6A and 6B) can adopt a position configuration 170 LA.

Referring to FIG. 8C, the hard mask layer 920 is etched to form a hard mask 922. Specifically, the inductively coupled plasma apparatus 100 introduces a gas Gb to generate a plasma Pb to etch the portion of the hard mask layer 920 (FIG. 8B) not covered by the bottom anti-reflective layer 932. In the plasma etching process, the magnetic field shielding element 170 (refer to the aforementioned FIG. 1-FIG. 4 or FIG. 6A and FIG. 6B) can adopt a position configuration 170 LB.

Referring to fig. 8D, the semiconductor substrate 910 is etched using the hard mask 922 as an etching mask, and a trench 910R is formed in the semiconductor substrate 910. Specifically, the inductively coupled plasma apparatus 100 introduces a gas Gc to generate a plasma Pc to etch the portion of the semiconductor substrate 910 not covered by the hard mask 922. During the plasma etching process, the magnetic field shielding element 170 (refer to fig. 1-4 or fig. 6A and 6B) can adopt a position configuration 170 LC.

Referring to fig. 8E, the trench 910R is filled with a dielectric material to form a shallow trench isolation 950. The shallow trench isolation 950 may be used to define an active region 912 of the semiconductor substrate 910.

Referring to fig. 8F, a gate dielectric layer 960, a gate electrode layer 970, a hard mask layer 980, a bottom anti-reflection coating (BARC) 990 and a patterned photoresist layer 1000 are formed on the sti regions 950 and the active region 912. In some embodiments, the patterned photoresist layer 1000 is formed by coating a photoresist layer on the bottom anti-reflection layer 990 and performing a photolithography process (e.g., exposing and developing) on the photoresist layer.

Referring to fig. 8G, the bottom anti-reflection layer 990 is etched to form a bottom anti-reflection layer 992. Specifically, the inductively coupled plasma apparatus 100 introduces a gas Ga 'to generate a plasma Pa' to etch the portion of the bottom anti-reflection layer 990 (refer to FIG. 8F) not covered by the patterned photoresist layer 1000. In the plasma etching process, the magnetic field shielding element 170 (refer to fig. 1-4 or fig. 6A and 6B) may adopt a position configuration 170 LD.

Referring to fig. 8H, the hard mask layer 980 is etched to form a hard mask 982. Specifically, the inductively coupled plasma apparatus 100 introduces a gas Gb 'and generates a plasma Pb' to etch the portion of the hard mask layer 980 (see FIG. 8G) not covered by the bottom anti-reflective layer 992. In the plasma etching process, the magnetic field shielding element 170 (refer to the aforementioned FIG. 1-FIG. 4 or FIG. 6A and FIG. 6B) can adopt a position configuration 170 LE.

Referring to fig. 8I, using the hard mask 982 as an etch mask, the gate electrode layer 970 and the gate dielectric layer 960 (see fig. 8H) are etched to form a gate electrode 972 and a gate dielectric 962, respectively. Specifically, the inductively coupled plasma apparatus 100 introduces a gas Gc 'to generate a plasma Pc' to etch the portion of the gate electrode layer 970 and the gate dielectric layer 960 (see FIG. 8H) not covered by the hard mask 982. During the plasma etching process, the magnetic field shielding element 170 (see the aforementioned fig. 1-4 or fig. 6A and 6B) may adopt a position configuration 170 LF.

In some embodiments, referring to fig. 8B-8I, at least two of the location configurations 170 LA-170 LF are different. In some embodiments, the position arrangements 170 LA-170 LF may be partially identical according to the similarity of the etching patterns. For example, the location configurations 170 LA-170 LC may be substantially identical and the location configurations 170 LD-170 LF may be substantially identical, where the location configurations 170 LA-170 LC are different from the location configurations 170 LD-170 LF. In some embodiments, the position arrangements 170 LA-170 LF may be partially identical depending on the type of target material being etched. For example, the location configurations 170LA, 170LD for etching the bottom anti-reflective layer may be substantially the same, the location configurations 170LB, 170LE for the hard mask layer may be substantially the same, and the location configurations 170LC, 170LF for the silicon substrate or the polysilicon may be substantially the same, wherein the set of location configurations 170LA, 170LD, the set of location configurations 170LB, 170LE, and the set of location configurations 170LC, 170LF are different. Alternatively, in some other embodiments, the location configurations 170 LA-170 LF are different.

In some embodiments, the gases Ga, Gb, and Gc may be different depending on the material being etched, and the plasmas Pa, Pb, and Pc may be different. Similarly, the gases Ga ', Gb', and Gc 'may be different depending on the material being etched, while the plasmas Pa', Pb ', and Pc' may be different. In some embodiments, the gases Ga and Ga 'may be the same, and the compositions of the plasmas Pa and Pa' may be substantially the same. In some embodiments, the gases Gb and Gb 'may be the same, so that the composition of the plasmas Pb and Pb' is substantially the same. In some embodiments, the gases Gc, Gc 'may be the same gas, and the composition of the plasmas Pc, Pc' may be substantially the same. Alternatively, in other embodiments, the gases Ga, Gb, Gc, Ga ', Gb ', Gc ' may be different.

Referring to fig. 8J, source/drain regions 1100 are formed in/on portions of the active region 912 not covered by the gate electrode 972 and gate dielectric 962. For example, the source/drain regions 1100 may be formed by n-type or p-type doping. Alternatively, in some embodiments, the source/drain region 1100 may be formed by epitaxial growth. The above steps of fig. 8A to 8J may be repeatedly performed for a plurality of substrates.

Figure 9 is a schematic diagram of a semiconductor processing tool 200 in accordance with some embodiments of the present disclosure. The semiconductor processing tool 200 may be a cluster tool (cluster tool) including a Load Port (LP), an Equipment Front-End Module (EFCM) TC, a load-lock chamber LC, a buffer chamber BC, and a process chamber (e.g., the inductively coupled plasma apparatus 100).

The load port LP is used for carrying the wafer transfer box WP. The pod WP may load a plurality of wafers and be transported by a suitable automated handling system, such as an Overhead monorail (OHT) system.

The equipment front end module TC connects the load port LP and the load lock LC. The load lock LC may be used to load or unload wafers, for example, the load lock LC includes a wafer entry chamber WI and a wafer exit chamber WO. The front end module TC may be provided with a robot a1 for taking out the wafer from the pod WP carried by the load port LP and transferring the wafer to the wafer entry chamber WI of the load lock LC, or for taking out the wafer from the wafer exit chamber WO of the load lock LC and transferring the wafer to the pod WP carried by the load port LP. The buffer chamber BC is connected to the load lock chamber LC and the process chamber (e.g., the inductively coupled plasma apparatus 100). The buffer chamber BC may be provided with a robot A2 for transferring wafers between the load lock chamber LC and a plurality of chamber process chambers (e.g., the inductively coupled plasma apparatus 100). In some embodiments, the inductively coupled plasma apparatus 100 is configured substantially as described above, and the number of inductively coupled plasma apparatuses 100 is only illustrative and should not be limited thereto.

Based on the above discussion, it can be seen that the present disclosure provides a number of advantages. However, it is to be understood that other embodiments may provide additional advantages, and that not all advantages need be disclosed herein, and that not all embodiments require a particular advantage. One of the advantages of the present invention is that by installing the fixing member around the reaction chamber, an operator can easily adjust the distribution of the magnetic field shielding elements around the reaction chamber according to the plasma process to be performed, so as to effectively isolate the geomagnetism, thereby improving the control of the plasma, and achieving a good control of the plasma etching, such as uniform etching or non-uniform etching. The magnetic shielding element in the embodiments of the present disclosure may also be fixed by other means, and is not limited to the fixing element shown in the figures.

Some embodiments of the present disclosure provide a method of operating an inductively coupled plasma apparatus. The method comprises the following steps: disposing a first magnetic shielding element adjacent to a first side of a reaction chamber; when the first magnetic shielding element is arranged near the first side of the reaction chamber, a first plasma process is carried out; removing the first magnetic field shielding element from the first side of the chamber after the first plasma process is performed; and performing a second plasma process after removing the first magnetic field shielding element from the first side of the chamber.

In some embodiments, the method further comprises disposing a second magnetic field shielding element adjacent to a second side of the chamber after performing the first plasma process and before performing the second plasma process.

In some embodiments, the method further comprises disposing a first substrate in the chamber, wherein the first plasma process is performed on the first substrate in the chamber and the second plasma process is performed on the first substrate in the chamber.

In some embodiments, the method further comprises disposing a first substrate in the chamber, wherein the first plasma process is performed on the first substrate in the chamber; removing the first substrate from the reaction chamber; and disposing a second substrate in the chamber, wherein the second plasma process is performed on the second substrate in the chamber.

In some embodiments, wherein performing the first plasma process comprises introducing a first gas into the chamber, performing the second plasma process comprises introducing a second gas into the chamber, wherein the second gas is different from the first gas.

In some embodiments, wherein disposing the first magnetic field shielding element adjacent to the first side of the reaction chamber comprises: the first magnetic field shielding element is locked on the first side of the reaction chamber.

In some embodiments, disposing the second magnetic field shielding element adjacent to the first side of the reaction chamber is performed such that the second magnetic field shielding element contacts the first magnetic field shielding element.

Some embodiments of the present disclosure provide an inductively coupled plasma apparatus. The inductively coupled plasma apparatus includes a reaction chamber, a wafer pedestal, a first magnetic shielding device and a second magnetic shielding device. The reaction chamber has a body and a dielectric plate, wherein the body and the dielectric plate define a space. The wafer pedestal is disposed in the reaction chamber for carrying a substrate. The first magnetic field shielding element is detachably arranged on the outer surface of the body. The second magnetic shielding element is detachably arranged on the outer surface of the body.

In some embodiments, an upper surface of the first magnetic field shielding element is higher than an upper surface of the dielectric plate, and a lower surface of the first magnetic field shielding element is lower than a lower surface of the wafer pedestal.

The foregoing outlines features of various embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. It will also be appreciated by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

Claims

1. A method of operating an inductively coupled plasma apparatus, comprising:

disposing a first magnetic shielding element adjacent to a first side of a reaction chamber;

when the first magnetic shielding element is disposed adjacent to the first side of the reaction chamber, performing a first plasma process;

removing the first magnetic field shielding element from the first side of the chamber after the first plasma process is performed; and

a second plasma process is performed after removing the first magnetic field shielding element from the first side of the chamber.

2. The method of claim 1, further comprising:

after the first plasma process is performed, a second magnetic shielding element is disposed adjacent to a second side of the chamber before the second plasma process is performed.

3. The method of claim 1, further comprising:

a first substrate is disposed in the chamber, wherein the first plasma process is performed on the first substrate in the chamber and the second plasma process is performed on the first substrate in the chamber.

4. The method of claim 1, further comprising:

disposing a first substrate in the chamber, wherein the first plasma process is performed on the first substrate in the chamber;

removing the first substrate from the reaction chamber; and

a second substrate is disposed in the chamber, wherein the second plasma process is performed on the second substrate in the chamber.

5. A method of operating an inductively coupled plasma apparatus, comprising:

after the first plasma process is performed, a second magnetic shielding element is disposed adjacent to the first side of the reaction chamber; and

when the first magnetic shielding element and the second magnetic shielding element are disposed adjacent to the first side of the reaction chamber, a second plasma process is performed.

6. The method of claim 5, wherein performing the first plasma process comprises introducing a first gas into the chamber, and performing the second plasma process comprises introducing a second gas into the chamber, wherein the second gas is different from the first gas.

7. The method of claim 5, wherein disposing the first magnetic field shielding element adjacent to the first side of the reaction chamber comprises:

the first magnetic field shielding element is locked on the first side of the reaction chamber.

8. The method of claim 5, wherein disposing the second magnetic field shielding element adjacent to the first side of the reaction chamber is performed such that the second magnetic field shielding element contacts the first magnetic field shielding element.

9. An inductively coupled plasma apparatus, comprising:

a reaction chamber having a body and a dielectric plate, wherein the body and the dielectric plate define a space;

a wafer pedestal disposed in the reaction chamber;

a first magnetic shielding element detachably disposed on an outer surface of the body; and

the second magnetic field shielding element is separated from the first magnetic field shielding element and is detachably arranged on the outer surface of the body.

10. The inductively coupled plasma apparatus of claim 9, wherein an upper surface of the first magnetic field shielding element is higher than an upper surface of the dielectric plate, and a lower surface of the first magnetic field shielding element is lower than a lower surface of the wafer pedestal.