CN106937475A - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN106937475A CN106937475A CN201511015613.3A CN201511015613A CN106937475A CN 106937475 A CN106937475 A CN 106937475A CN 201511015613 A CN201511015613 A CN 201511015613A CN 106937475 A CN106937475 A CN 106937475A
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- magnetic
- reaction chamber
- masking layer
- processing apparatus
- plasma processing
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Abstract
The present invention provides a kind of plasma processing apparatus, is used to improve Magnetic Shielding Effectiveness.Described device includes：Reaction chamber, is internally provided with treatment space；Pedestal, is arranged in reaction chamber, for placing substrate；Plasma generating element, for the gas processed in space to be dissociated into plasma；Magnetic shield, positioned at the periphery in treatment space, including at least two mutually isolated magnetic masking layers.
Description
Technical field
Plasma processing apparatus the present invention relates to be used to process semiconductor devices, such as plasma etching apparatus, plasma deposition apparatus.
Background technology
In order to improve plasma processing apparatus（Such as plasma etching apparatus）The uniformity of processing is, it is necessary to eliminate or suppress the interference of the external magnetic field such as earth magnetism plasma.The solution of current main flow is to cover a floor height magnetic permeability metallic plate or layer to realize to the magnetic screen inside reaction chamber in the outside of plasma processing apparatus reaction chamber.Particular technique details can join the A1 of patent application publication US 2007/0062449 of the announcement of on March 22nd, 2007.
However, the technology is still primarily present problems with present：The Magnetic Shielding Effectiveness more than 90% is realized with individual layer magnetic masking layer, had both needed to use high-permeability material（Relative permeability is generally needed more than 10000）, it is also desirable to the magnetic masking layer has larger thickness（Generally need more than 2mm）With strict sealing.Because high-permeability material price is high, although further increasing thickness can lift Magnetic Shielding Effectiveness, cost rises rapidly.
The content of the invention
According to an aspect of the present invention, there is provided a kind of plasma processing apparatus, including：
Reaction chamber, is internally provided with treatment space；
Pedestal, is arranged in reaction chamber, for placing substrate；
Plasma generating element, for the gas processed in space to be dissociated into plasma；
Magnetic shield, positioned at the periphery in treatment space, including at least two mutually isolated magnetic masking layers.
Optionally, the magnetic shield includes mutually isolated reaction chamber side wall and liner, and the liner is located in the reaction chamber, and surrounds the treatment space, and an at least magnetic masking layer is arranged on reaction chamber side wall, and an at least magnetic masking layer is arranged on the liner.
Optionally, magnetic masking layer is arranged on inner surface or/and outer surface or/and the inside of reaction chamber side wall；Magnetic masking layer is arranged on inner surface or/and outer surface or/and the inside of the liner.
Optionally, magnetic masking layer is arranged on the inside of reaction chamber side wall or/and liner in the way of interlayer.
Optionally, the magnetic shield includes reaction chamber side wall, and magnetic masking layer is arranged on inner surface or outer surface or the inside of reaction chamber side wall.
Optionally, the magnetic shield includes liner, and the liner is located in the reaction chamber, and surrounds the treatment space, and magnetic masking layer is arranged on inner surface or outer surface or the inside of the liner.
Optionally, the medium for layer being covered for isolating adjoining magnetic includes conductor, semiconductor, insulator, air or vacuum.
Optionally, the spacing between adjacent two magnetic masking layer is more than the thickness of each in two magnetic masking layer.
Optionally, plasma generating element includes the upper and lower electrode that is oppositely arranged, and the radio frequency source being connected with least one of upper/lower electrode.
Optionally, plasma generating element includes being arranged on the coupling coil above reaction chamber roof, and the radio frequency source being connected with coupling coil.
According to another aspect of the present invention, there is provided a kind of plasma processing apparatus, including：
Reaction chamber, is internally provided with treatment space；
Plasma generating element, for the gas processed in space to be dissociated into plasma；
Metal shell, is arranged on the periphery of reaction chamber, and with reaction chamber at a distance；
Magnetic shield, positioned at the periphery in treatment space, including at least two mutually isolated magnetic masking layers.
Optionally, the metal shell is provided with magnetic masking layer.
Optionally, the inner surface of the metal shell or/and outer surface or/and it is internally provided with magnetic masking layer.
Optionally, the magnetic masking layer of the magnetic shield is arranged on the metal shell and/or the reactor wall and/or liner, and the liner is located in the reaction chamber, and surrounds the treatment space.
Brief description of the drawings
Fig. 1 is the structural representation of the plasma processing apparatus of one embodiment of the invention；
Fig. 2 is the structural representation of the plasma processing apparatus of another embodiment of the present invention；
Fig. 3 is the schematic diagram of the Magnetic Shielding Effectiveness of individual layer magnetic masking layer；
Fig. 4 is the schematic diagram of the Magnetic Shielding Effectiveness of two-layer magnetic masking layer.
Specific embodiment
Below in conjunction with specific embodiment and accompanying drawing, plasma processing apparatus of the present invention are illustrated.It is emphasized that being here only the elaboration of exemplary type, however not excluded that there is other utilization embodiments of the present invention.
Fig. 1 is the structural representation of the plasma processing apparatus of one embodiment of the invention.In this embodiment, it is a kind of inductively coupled plasma（ICP）Processing unit.Such as Fig. 1, the plasma processing apparatus are including by multiple walls（Side wall 21, roof 23 and bottom wall 25）The reaction chamber 2 for enclosing, being internally provided with for reaction chamber 2 processes space 20.Pedestal 3 for placing substrate W is arranged in reaction chamber 2, and positioned at the lower section in treatment space 20.For the gas processed in space 20 to be dissociated into the plasma generating element of plasma, including the coupling coil 42 of the top of reaction chamber roof 23 is arranged on, and is connected with coupling coil 42, is used to be provided for coupling coil 42 radio frequency source 44 of electric power.The plasma for being formed can be to substrate W treatment.
The periphery in treatment space 20 is provided with magnetic shield, is used to eliminate or weaken interference of the external magnetic field to plasma in reaction chamber 2.To improve the shield effectiveness of magnetic shielding material, the magnetic shield includes at least two mutually isolated magnetic masking layers 8.Here magnetic masking layer should make the understanding of broad sense, and it both can be the coating of coating or sputter in body surface（The coating can not depart from or remove from the body surface, and otherwise coating will suffer from destruction）, or by the preformed magnetic shield panel of magnetic shielding material（The magnetic shield panel can both be mounted in body surface or interior of articles, also can depart from or remove from the object）.In addition, covering the medium of layer for isolating adjoining magnetic（In other words, positioned at adjoining magnetic cover layer between material）Can be conductor, semiconductor, insulator, air or vacuum etc..Experiment shows which kind of either above-mentioned material can greatly improve Magnetic Shielding Effectiveness between two magnetic masking layers.
In the embodiment that Fig. 1 is given, the magnetic shield includes mutually isolated reaction chamber side wall 21 and liner 6.Reaction chamber side wall 21 is almost parallel with liner 6, and both are substantially in same direction in other words（Vertical direction）Extend.The liner 6 is located in the reaction chamber 2, and is surrounded（Limit in other words）The treatment space 20.Liner 6 can be in cylinder or class cylinder, to cause that distribution of the plasma in horizontal plane all directions is tried one's best uniformly.Liner 6 is typically conveniently replaced.In process, plasma or other particles inevitably form deposition film on the surface of liner 6, if the deposition film is too thick, can have a strong impact on the uniformity of plasma process.Thus, it will usually timing more changeable liner 6.
To produce Magnetic Shielding Effectiveness, reaction chamber side wall 21 is provided with an at least magnetic masking layer 8, and liner 6 is provided with an at least magnetic masking layer 8.The mode for setting magnetic masking layer 8 can have various.Such as, magnetic masking layer 8 may be provided at reaction chamber side wall 21（Or liner 6）Inner surface, it is also possible to be arranged on reaction chamber side wall 21（Or liner 6）Outer surface.In addition, magnetic masking layer 8 can also be arranged on reaction chamber side wall 21（Or liner 6）Inside.Such as, can autoreaction chamber side wall 21（Or liner 6）Top a space is dug out inside it, the plate that is made up of magnetic shielding material is then loaded into the space.
Typically, the number of plies of the magnetic masking layer being isolated is more, and the effect of magnetic screen is better.In the present embodiment, the surfaces externally and internally of reaction chamber side wall 21 and inside, the surfaces externally and internally of liner 6 and inside are provided with magnetic masking layer 8.But, it is however generally that, as long as there is two screen layers being isolated just can substantially to meet shield effectiveness.Thus, in other embodiments, the number of magnetic masking layer can be 2,3,4,5 or 7 etc..In addition, also may be selected only in reaction chamber side wall 21 without on liner 6, or only in liner 6 without setting magnetic masking layer 8 on reaction chamber side wall 21.When magnetic masking layer 8 is arranged on the inner surface of reaction chamber side wall 21 or the inner surface of liner 6 and outer surface etc. is commonly exposed to the environment of plasma, one layer of resist layer can be set on the surface of magnetic masking layer 8, such as yttrium oxide layer, to avoid magnetic masking layer by plasma etching.
Inventor is had further been found that when the spacing between adjacent two magnetic masking layer（Refer to the distance between their adjacent surfaces）During more than the thickness of each in two magnetic masking layer, Magnetic Shielding Effectiveness also can be substantially more excellent.Therefore, when actually implementing, the spacing that adjoining magnetic covers layer can be set by the principle.
For inductance coupling plasma processing device as described above, except magnetic masking layer not can be set generally for the roof 23 of reaction chamber（Because the magnetic field that coupling coil 42 is produced will enter reaction chamber 2 by roof 23, thus roof 23 can not have the property of magnetic screen）Outward, other walls（Side wall 21, bottom wall 25）The magnetic masking layer 8 of isolation can be set, to improve Magnetic Shielding Effectiveness.
Fig. 2 is the structural representation of the plasma processing apparatus of another embodiment of the present invention.In this embodiment, it is a kind of capacitance coupling plasma（CCP）Processing unit.It differs only in plasma generating element and roof 23 with Fig. 1 embodiments.It is mutually isostructural to introduce the description that can refer to Fig. 1 embodiments, repeat no more hereinafter.Hereinafter both differences are only introduced.
Such as Fig. 2, plasma generating element includes the Top electrode 232, bottom electrode being oppositely arranged（Bottom electrode is a part for pedestal 3）, and the radio frequency source being connected with least one of upper/lower electrode（It is not shown）.Because roof 23 must no longer have magnetic permeability, thus, the roof 23 in the present embodiment can be set magnetic masking layer 8.
A bit, the plasma processing apparatus of the various embodiments described above generally may also include a metal shell to supplementary notes（It is not shown）, the metal shell is arranged on the periphery of reaction chamber 2, and with reaction chamber 2 at a distance（It is formed with gap between the two in other words）.To improve Magnetic Shielding Effectiveness, the metal shell is settable magnetic masking layer as described above.The mode that the magnetic masking layer is set is not limited, and it both may be provided at the inner surface of metal shell, outer surface, and the inside of metal shell is may be provided at again, can also be arranged on simultaneously it is all of above local or therein any two at or many places.
Fig. 3 is the schematic diagram of the Magnetic Shielding Effectiveness of individual layer magnetic masking layer.Fig. 3（a）Shown in be to treat the schematic diagram of geodesic structure, its magnetic masking layer is single layer structure（That is, there was only one layer of magnetic masking layer from external magnetic field to magnetic screen region）.The material of magnetic masking layer is permalloy 1J85.Externally-located, constant vertical magnetic field enters magnetic screen region from top through magnetic masking layer.By the Magnetic Shielding Effectiveness that magnetic masking layer is weighed by the magnetic field intensity for measuring magnetic screen region.Fig. 3（b）Shown is corresponding test result.Magnetic masking layer thickness is 0.2 millimeter（mm）When, the magnetic field intensity for measuring is for about 0.5 Gauss（Gauss）；Magnetic masking layer thickness increases to 1.0 millimeters（mm）When, the magnetic field intensity reduction for measuring is for about 0.2 Gauss（Gauss）.
Fig. 4 is the schematic diagram of the Magnetic Shielding Effectiveness of double-deck magnetic masking layer.Fig. 4（a）Shown in be to treat the schematic diagram of geodesic structure, its magnetic masking layer is double-decker（That is, there is the mutually isolated magnetic masking layer of two-layer from external magnetic field to magnetic screen region）.The material of two-layer magnetic masking layer is also permalloy 1J85.The thickness of every layer of magnetic masking layer maintains 0.5 millimeter（mm）, the gross thickness of two-layer is 1 millimeter（mm）.Medium between two-layer magnetic masking layer is air（Or air blanketing）.Externally-located, constant vertical magnetic field（The intensity in the magnetic field is identical with Fig. 3）Double-deck magnetic masking layer is passed through to enter magnetic screen region from top.By the Magnetic Shielding Effectiveness that double-deck magnetic masking layer is weighed by the magnetic field intensity for measuring magnetic screen region.Fig. 4（b）Shown is corresponding test result.The thickness of air blanketing is 1 millimeter（mm）When, the magnetic field intensity for measuring is for about 0.15 Gauss（Gauss）.The thickness of air blanketing increases to 8 millimeters（mm）When, the magnetic field intensity reduction for measuring is for about 0.05 Gauss（Gauss）--- it is far smaller than 0.2 Gauss of same thickness individual layer magnetic masking layer in Fig. 3（Gauss）；I.e. Magnetic Shielding Effectiveness improves 75%.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that the description above is not considered as limitation of the present invention.After those skilled in the art have read the above, all be will be apparent for various modifications and substitutions of the invention.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (14)
1. a kind of plasma processing apparatus, including：
Reaction chamber, is internally provided with treatment space；
Pedestal, is arranged in reaction chamber, for placing substrate；
Plasma generating element, for the gas processed in space to be dissociated into plasma；
Magnetic shield, positioned at the periphery in treatment space, including at least two mutually isolated magnetic masking layers.
2. plasma processing apparatus as claimed in claim 1, wherein, the magnetic shield includes mutually isolated reaction chamber side wall and liner, the liner is located in the reaction chamber, and surround the treatment space, an at least magnetic masking layer is arranged on reaction chamber side wall, and an at least magnetic masking layer is arranged on the liner.
3. plasma processing apparatus as claimed in claim 2, wherein, magnetic masking layer is arranged on inner surface or/and outer surface or/and the inside of reaction chamber side wall；Magnetic masking layer is arranged on inner surface or/and outer surface or/and the inside of the liner.
4. plasma processing apparatus as claimed in claim 3, wherein, magnetic masking layer is arranged on the inside of reaction chamber side wall or/and liner in the way of interlayer.
5. plasma processing apparatus as claimed in claim 1, wherein, the magnetic shield includes reaction chamber side wall, and magnetic masking layer is arranged on inner surface or outer surface or the inside of reaction chamber side wall.
6. plasma processing apparatus as claimed in claim 1, wherein, the magnetic shield includes liner, and the liner is located in the reaction chamber, and surrounds the treatment space, and magnetic masking layer is arranged on inner surface or outer surface or the inside of the liner.
7. plasma processing apparatus as claimed in claim 1, wherein, the medium that layer is covered for isolating adjoining magnetic includes conductor, semiconductor, insulator, air or vacuum.
8. plasma processing apparatus as claimed in claim 1, wherein, the spacing between adjacent two magnetic masking layer is more than the thickness of each in two magnetic masking layer.
9. plasma processing apparatus as claimed in claim 1, wherein, plasma generating element includes the upper and lower electrode being oppositely arranged, and the radio frequency source being connected with least one of upper/lower electrode.
10. plasma processing apparatus as claimed in claim 1, wherein, plasma generating element includes being arranged on the coupling coil above reaction chamber roof, and the radio frequency source being connected with coupling coil.
A kind of 11. plasma processing apparatus, including：
Reaction chamber, is internally provided with treatment space；
Plasma generating element, for the gas processed in space to be dissociated into plasma；
Metal shell, is arranged on the periphery of reaction chamber, and with reaction chamber at a distance；
Magnetic shield, positioned at the periphery in treatment space, including at least two mutually isolated magnetic masking layers.
12. plasma processing apparatus as claimed in claim 11, wherein, the metal shell is provided with magnetic masking layer.
13. plasma processing apparatus as claimed in claim 11, wherein, the inner surface of the metal shell or/and outer surface or/and it is internally provided with magnetic masking layer.
14. plasma processing apparatus as claimed in claim 11, wherein, the magnetic masking layer of the magnetic shield is arranged on the metal shell and/or the reactor wall and/or liner, and the liner is located in the reaction chamber, and surrounds the treatment space.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511015613.3A CN106937475A (en) | 2015-12-31 | 2015-12-31 | Plasma processing apparatus |
| TW105135255A TWI633572B (en) | 2015-12-31 | 2016-10-31 | Plasma processing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511015613.3A CN106937475A (en) | 2015-12-31 | 2015-12-31 | Plasma processing apparatus |
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| CN106937475A true CN106937475A (en) | 2017-07-07 |
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| CN201511015613.3A Pending CN106937475A (en) | 2015-12-31 | 2015-12-31 | Plasma processing apparatus |
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| TW (1) | TWI633572B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109961996A (en) * | 2017-12-14 | 2019-07-02 | 中微半导体设备(上海)股份有限公司 | A kind of apparatus for processing plasma and with highly conductive composite magnetic material thereon |
| CN109994359A (en) * | 2017-12-29 | 2019-07-09 | 中微半导体设备(上海)股份有限公司 | A kind of plasma process chamber |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI820374B (en) * | 2020-12-23 | 2023-11-01 | 台灣積體電路製造股份有限公司 | Inductively coupled plasma apparatus and method for operating the same |
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| US20070062449A1 (en) * | 2004-07-30 | 2007-03-22 | Applied Materials, Inc., A Delaware Corporation | Enhanced magnetic shielding for plasma-based semiconductor processing tool |
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| KR20150130647A (en) * | 2014-05-13 | 2015-11-24 | 주식회사 탑 엔지니어링 | Antenna Structure for Plasma Processing Apparatus |
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| JP4329403B2 (en) * | 2003-05-19 | 2009-09-09 | 東京エレクトロン株式会社 | Plasma processing equipment |
| CN103732788B (en) * | 2012-08-15 | 2016-06-29 | 中外炉工业株式会社 | Plasma processing apparatus |
| WO2014116399A1 (en) * | 2013-01-25 | 2014-07-31 | Applied Materials, Inc. | Self aligned dual patterning technique enhancement with magnetic shielding |
| WO2014149307A1 (en) * | 2013-03-15 | 2014-09-25 | Applied Materials, Inc. | Magnetic shielding for plasma process chambers |
| CN105590824B (en) * | 2014-10-20 | 2017-11-03 | 中微半导体设备(上海)有限公司 | A kind of plasma processing device |
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2015
- 2015-12-31 CN CN201511015613.3A patent/CN106937475A/en active Pending
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2016
- 2016-10-31 TW TW105135255A patent/TWI633572B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20070062449A1 (en) * | 2004-07-30 | 2007-03-22 | Applied Materials, Inc., A Delaware Corporation | Enhanced magnetic shielding for plasma-based semiconductor processing tool |
| CN102573429A (en) * | 2010-12-09 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding apparatus, processing method and device, semiconductor device |
| CN103477285A (en) * | 2011-02-16 | 2013-12-25 | 迈普尔平版印刷Ip有限公司 | System for magnetic shielding |
| CN102789950A (en) * | 2011-05-17 | 2012-11-21 | 因特瓦克公司 | Large area icp source for plasma application |
| CN103854945A (en) * | 2012-12-05 | 2014-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma equipment and reaction chamber thereof |
| KR20150130647A (en) * | 2014-05-13 | 2015-11-24 | 주식회사 탑 엔지니어링 | Antenna Structure for Plasma Processing Apparatus |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109961996A (en) * | 2017-12-14 | 2019-07-02 | 中微半导体设备(上海)股份有限公司 | A kind of apparatus for processing plasma and with highly conductive composite magnetic material thereon |
| CN109961996B (en) * | 2017-12-14 | 2021-05-07 | 中微半导体设备(上海)股份有限公司 | Plasma processing equipment and high-conductivity magnetic-conductive composite material used on same |
| CN109994359A (en) * | 2017-12-29 | 2019-07-09 | 中微半导体设备(上海)股份有限公司 | A kind of plasma process chamber |
| CN109994359B (en) * | 2017-12-29 | 2022-11-18 | 中微半导体设备(上海)股份有限公司 | Plasma processing chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI633572B (en) | 2018-08-21 |
| TW201724167A (en) | 2017-07-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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