TWI615063B - Inductively coupled plasma processing apparatus and self-inducting coil thereof and method thereof for manufacturing semiconductor substrate - Google Patents

Description

Inductively coupled plasma processing apparatus and self-inducting coil thereof and the same Method of manufacturing a semiconductor substrate

The present invention relates to the field of semiconductor manufacturing, and in particular to an inductively coupled plasma processing apparatus and a self-inducting coil thereof and a method for manufacturing the same.

The plasma processing apparatus performs processing of the substrate of the semiconductor substrate and the plasma flat plate by using the working principle of the vacuum reaction chamber. The working principle of the vacuum reaction chamber is to pass a reaction gas containing a suitable etchant source gas into the vacuum reaction chamber, and then input RF energy to the vacuum reaction chamber to start the reaction gas to excite and maintain the plasma. The semiconductor substrate and the plasma plate are processed by etching a material layer on the surface of the substrate or depositing a material layer on the surface of the substrate.

1 shows a schematic structural view of an inductively coupled plasma processing apparatus of the prior art, the inductively coupled plasma processing apparatus 100 including a reaction chamber 105. A base 101 for carrying and securing the substrate 104 is disposed below the reaction chamber 105. An inductive coupling coil is disposed above the top cover of the reaction chamber 105; a radio frequency power source 103 is used to supply power to the inductive coupling coil to provide RF energy to the interior of the chamber. Wherein, the inductive coupling coil comprises an intermediate coil 102a and a peripheral coil 102b. During the process, the reaction gas entering from the upper portion of the reaction chamber 105 is ionized by the high-energy magnetic field generated by the intermediate coil 102a and the peripheral coil 102b to form a plasma. The plasma moves downward under the action of a high-energy magnetic field to perform a process (e.g., an etching reaction) on the substrate 104 fixed on the substrate 101. Therefore, the distribution of the magnetic field generated by the inductive coupling coil 102 affects the distribution of the plasma.

Wherein, the intermediate coil 102a and the peripheral coil 102b are generally planar spiral structures, and the magnetic field excited in the central region of the corresponding substrate 104 is strong, and the magnetic field intensity corresponding to the peripheral region of the substrate 104 is weak, thereby making the reaction The plasma density in the central region of the chamber 105 is high, and the plasma density in the peripheral region is low.

In view of the above problems in the background art, the present invention proposes a self-inducting coil of an inductively coupled plasma processing apparatus and a method thereof for manufacturing a semiconductor substrate.

A first aspect of the present invention provides a self-inductive coil for an inductively coupled plasma processing apparatus, wherein the inductively coupled plasma processing apparatus includes a closed casing including a top plate, wherein the inductance The coupled plasma processing apparatus includes an inductive coupling coil on the top plate, the inductive coupling coil being divided into a plurality of regions corresponding to the plurality of regions of the substrate to emit radio frequency energy into the closed casing, at least two At least one self-inductive coil is disposed between the inductive coupling coils of the regions, and when the inductive coupling coil is energized, the self-inductive coil self-induced a current opposite to an adjacent inductive coupling coil to generate and adjacent The inductively coupled coil has a magnetic field of opposite direction, wherein the self-inductive coil is ungrounded, and the self-inductive coil has a hollow portion for supplying a cooling gas or a cooling liquid.

Further, the inductively coupled plasma processing apparatus includes two regions of inductive coupling coils respectively corresponding to a central region and a peripheral region of the substrate.

Further, the self-inductive coil includes a single-turn coil structure or a multi-turn coil structure.

Further, the number of turns of the metal coil is adjusted according to an electric field to be isolated and a volume of the inductively coupled plasma processing apparatus.

Further, the inductively coupled plasma processing apparatus further includes a movable bracket that drives the self-inductive coil to move in a direction perpendicular to a plane defined by the inductive coupling coil.

Further, the material of the self-inductive coil includes aluminum and copper.

Further, the self-induction coil is connected with a cooling device for cooling the heat generated by the self-induced current of the self-inductive coil.

Further, the cooling device is wrapped around the periphery of the self-inducting coil, and a cooling gas/liquid is introduced into the cooling device, and a cooling gas/liquid circulating device that supplies the cooling gas/liquid is externally connected.

Further, the cooling device is a blowing device disposed beside the self-inducting coil.

A second aspect of the present invention provides an inductively coupled plasma processing apparatus including a closed casing including a top plate, and the inductively coupled plasma processing apparatus includes the first aspect of the present invention The self-inducting coil is located above the top plate.

A third aspect of the invention provides a method of fabricating a semiconductor substrate, wherein the method is carried out in an inductively coupled plasma processing apparatus including the self-inducting coil of the first aspect of the invention, characterized in that: Placing a substrate on a base in the inductively coupled plasma processing apparatus; placing at least one self-inductive coil between inductive coupling coils of at least two regions on the top plate; supplying process gas to the inductive coupling a gas injector of a plasma processing apparatus; Applying RF energy to the inductive coupling coil to process the substrate and causing the self-inductive coil to induce a current opposite to an adjacent inductive coupling coil to produce a reverse direction to an adjacent inductive coupling coil a magnetic field in which the self-inductive coil is ungrounded.

The present invention is capable of effectively isolating mutual crosstalk between the center coil and the peripheral coil. In other words, the present invention is equivalent to isolating the plasma density adjustment process of the central region and the peripheral region corresponding to the substrate covered by the induction coil, thereby improving the magnetic field uniformity (ie, plasma distribution uniformity) inside the chamber, Achieve uniformity of the substrate process.

100‧‧‧Inductively coupled plasma processing device

101‧‧‧Abutment

102‧‧‧Inductive Coupling Coil

102a‧‧‧ intermediate coil

102b‧‧‧Circumference

103‧‧‧RF power supply

104‧‧‧Fixed substrate

105‧‧‧Reaction chamber

200‧‧‧Inductively coupled plasma processing unit

202‧‧‧Metal sidewall

204‧‧‧Insulated roof

206‧‧‧Abutment

2081a‧‧‧First RF power supply

2081b‧‧‧second RF power supply

2084a‧‧‧First RF power supply

2084b‧‧‧second RF power supply

2084c‧‧‧ Third RF Power Supply

210a‧‧‧ center coil

210b‧‧‧Circumference

2101a‧‧‧Center coil

2101b‧‧‧Circumference

2102a‧‧‧ center coil

2102b‧‧‧Circumference coil

2104a‧‧‧First coil

2104b‧‧‧second coil

2104c‧‧‧third coil

2105a‧‧‧Center coil

2105b‧‧‧ peripheral coil

2121‧‧‧Self-induction coil

2122‧‧‧Self-induction coil

2124a‧‧‧First self-inductive coil

2124b‧‧‧Second self-inductive coil

2125‧‧‧Self-induction coil

A‧‧‧ area

b‧‧‧Area

C1‧‧‧ magnetic field

C2‧‧‧ magnetic field

C3‧‧‧ magnetic field

O‧‧‧ origin

W‧‧‧ substrates

1 is a schematic structural view of an inductively coupled plasma processing apparatus; FIG. 2 is a schematic structural view of an inductively coupled plasma processing apparatus according to an embodiment of the present invention; FIG. 3 is a schematic diagram of the principle of the present invention; FIG. 5 is a schematic structural view of an inductively coupled plasma processing apparatus according to still another embodiment of the present invention; FIG. 6 is an embodiment of an inductively coupled plasma processing apparatus according to another embodiment of the present invention; FIG. 7 is a schematic diagram showing the technical effects of the prior art; FIG. 8 is a schematic diagram of the technical effects of the present invention.

Specific embodiments of the present invention will be described below with reference to the accompanying drawings.

Embodiments of the present invention provide improved inductively coupled plasma processing apparatus and self-inducting coils thereof. It should be noted that "semiconductor process parts", "wafers" and "substrates" These terms may be used interchangeably in the following description. In the present invention, they all refer to process parts processed in an inductively coupled plasma processing apparatus, and the process parts are not limited to wafers, substrates, substrates, large areas. Flat substrate, etc. For convenience of description, the present invention will be exemplarily described by taking "substrate" as an example in the description and the drawings of the embodiments.

2 is a schematic structural view of an inductively coupled plasma processing apparatus according to an embodiment of the present invention. 2 shows an inductively coupled plasma processing apparatus 200 in accordance with one embodiment of the present invention. It should be understood that the inductively coupled plasma processing apparatus 200 therein is merely exemplary, and the 200 may actually include fewer or additional components, and the arrangement of components may also differ from that shown in FIG.

2 shows a cross-sectional view of an inductively coupled plasma processing apparatus in accordance with a first embodiment of the present invention. Inductively coupled plasma processing apparatus 200 includes a metal sidewall 202 and an insulating top plate 204 that form a hermetic vacuum enclosure and is evacuated by an evacuation pump (not shown). The insulating top plate 204 is by way of example only, and other top plate patterns may be used, such as dome-shaped, metal top plates with insulating material windows, and the like. The base 206 includes an electrostatic chuck (not shown) on which the substrate W to be processed is placed. Bias power is applied to the electrostatic chuck to create a clamping force on the substrate W. The inductively coupled plasma processing apparatus 200 includes an inductive coupling coil on the top plate, and the inductive coupling coil is divided into a plurality of regions corresponding to the plurality of regions of the substrate W to emit radio frequency energy to the closed Inside the housing, the substrate is processed.

Further, in a preferred embodiment of the present invention, the inductively coupled plasma processing apparatus includes two regions of inductive coupling coils respectively corresponding to a central region and a peripheral region of the substrate. As shown in FIG. 2, the RF power of the first RF power source 2081a and the second RF power source 2081b are applied to an inductive coupling coil located on the insulating top plate 204. The inductive coupling coil includes the opposite A central inductive coupling coil of the central region of the chamber cap and at least one peripheral inductive coupling coil surrounding the central inductive coupling coil. The processing gas is supplied from the gas source into the reaction chamber through a gas injector (not shown) to ignite and sustain the plasma, thereby processing the substrate W.

As shown in FIG. 2, the inductive coupling coil includes a center coil 2101a located at a central portion of the reaction chamber cover and at least one peripheral coil 2101b surrounding the periphery of the center coil 2101a. The central coil 2101a and the peripheral coil 2101b may both be planar spiral coils, which together constitute an inductive coupling coil in the inductively coupled plasma processing apparatus of the present embodiment. The first RF power source 2081a supplies RF energy to the center coil 210a, and the second RF power source 2081b supplies RF energy to the peripheral coil 210b to jointly generate a downward magnetic field, thereby corresponding to a central area of the substrate W. The plasma density of the surrounding area is adjusted separately, and the desired plasma distribution is more easily obtained.

It should be noted that, in this embodiment, the center coil and the peripheral coil are respectively connected to different RF power sources, so the output RF power can be independently adjusted. Optionally, the radio frequency power supply of the present invention may be two independent power supply devices, or two independent power supply modules in the same power supply device, respectively providing radio frequency power to the central coil and the peripheral coil to excite the magnetic field.

Further, at least one self-inducting coil 2121 is disposed between the center coil 2101a and the peripheral coil 2101b. When the central coil 2101a and the peripheral coil 2101b are energized, they self-inductively and adjacent the central coil 2101a and the peripheral coil. 2101b opposite current. Optionally, the self-inductive coil provided by the present invention includes any one or more of the following: a metal coil, a metal cylinder. Wherein, the metal coil comprises a single-turn coil structure or a multi-turn coil structure.

Figure 2 shows a preferred embodiment of the invention. In the present embodiment, the center coil 2101a and the peripheral coil 2101b are shown only in a single-turn coil structure. It should be noted that in practical applications, the inductor The configuration of the coupling coil includes various forms such as a spiral type, a multi-turn coil structure, and the like. In the present embodiment, the self-inductive coil 2121 is also a single-turn coil.

Figure 3 is a schematic illustration of the principles of the present invention as seen from below the top of the chamber. The three concentric circles in the top view are the center coil 2101a, the self-inducting coil 2121, and the peripheral coil 2101b from the inside to the outside. As shown in the figure, the current direction of the center coil 2101a is clockwise. According to the right-hand law, the direction of the magnetic field that can be generated is the vertical paper surface (shown as "fork" in Fig. 3), and the magnetic field generated is mainly determined. The magnetic field strength of the central region of the substrate. Similarly, the current direction of the peripheral coil 2101b is also necessarily clockwise, and the direction of the magnetic field that can be generated is the vertical paper surface (shown as "fork" in FIG. 3), and the magnetic field generated mainly determines the periphery of the substrate. Regional magnetic field strength. According to Faraday's law, the self-inducting coil 2121 located between the center coil 2101a and the peripheral coil 2101b is a single-turn coil structure, and induces a counterclockwise current opposite to the current direction of the center coil 2101a and the peripheral coil 2101b, thereby forming a vertical paper facing outward. Magnetic field. The magnetic fields C1, C2, and C3 respectively generated in the vicinity of the center coil 2101a, the peripheral coil 2101b, and the self-inducting coil 2121 shown in FIG. 2 indicate the center coil 2101a and the peripheral coil in the directions of the arrows C1, C2, and C3. The direction of the magnetic field generated by 2101b and self-inductive coil 2121, respectively. As shown in FIG. 2, the direction of the electric field generated by the center coil 2101a and the peripheral coil 2101b is downward, corresponding to the central area and the peripheral area of the substrate W, respectively, so as to guide the plasma to bombard the surface of the substrate W and the substrate W. The surface reaction completes the process. The direction of the reaction magnetic field generated by the self-inducting coil 2121 of the single-turn coil structure is opposite to the direction of the electric field generated by the center coil 2101a and the peripheral coil 2101b, and is upward. In the adjacent regions of the self-inducting coil 2121 and the center coil 2101a and the peripheral coil 2101b, the magnetic field strengths which are vertically upward or downward in the direction in which they are generated tend to weaken, and the electric field direction tends to be 0 in their critical regions. Thereby, mutual crosstalk between the center coil 2101a and the peripheral coil 2101b can be effectively isolated. In other words, the present invention corresponds to the center corresponding to the substrate W covered by the self-inducting coil 2121. The plasma density adjustment process of the area and the surrounding area is isolated from each other, thereby improving the magnetic field uniformity inside the chamber (ie, plasma distribution uniformity) to achieve uniformity of the substrate process.

4 is a schematic structural view of an inductively coupled plasma processing apparatus according to still another embodiment of the present invention. This embodiment is a modification in which the self-inductive coil 2122 is a multi-turn coil structure, specifically, a simple parallel accumulation corresponding to the single-turn closed coil of the embodiment shown in Fig. 2, and has no connection relationship with each other. As shown in FIG. 4, the self-inductive coil 2122 is composed of three closed-loop single-turn coils, and the three-turn coils generate an opposite current to the central coil 2102a and the peripheral coil 2102b, thereby generating a single ratio as shown in FIG. The layer coil has a stronger induced magnetic field. The multi-turn coil structure of this embodiment has better isolation effect and uniform plasma distribution in the chamber under other conditions. However, such a setup would take up more room space.

It should be noted that if the self-inductive coil is a coil structure, the more the number of coils is, the better the isolation capability is naturally, but considering that the area of the vacuum processing chamber is very expensive, the fewer the number of coil turns, the more cost-saving. Those skilled in the art will appreciate that the specific number of coils from the induction coil needs to be considered by the required isolation capability and chamber area tradeoffs. The number of turns of the metal coil is adjusted according to an electric field to be isolated and a volume of the inductively coupled plasma processing apparatus.

FIG. 5 is a schematic structural view of an inductively coupled plasma processing apparatus according to still another embodiment of the present invention. The insulating top plate 204 of the inductively coupled plasma processing apparatus 200 is provided with coils of three regions, which are a first coil 2104a, a second coil 2104b, and a third coil 2104c. The first coil 2104a, the second coil 2104b, and the third coil 2104c respectively correspond to a central region, an intermediate region, and a peripheral region of the substrate W. The first RF power source 2084a, the second RF power source 2084b, and the third RF power source 2084c respectively supply RF energy to the first coil 2104a, the second coil 2104b, and the third coil 2104c to process the substrate W. The inductively coupled plasma processing apparatus 200 includes a first The self-inducting coil 2124a and the second self-inducting coil 2124b, wherein the first self-inducting coil 2124a is disposed between the first coil 2104a and the second coil 2104b, and the second self-inducting coil 2124b is disposed at the second coil 2104b And between the third coil 2104c. Specifically, the first self-inducting coil 2124a is for isolating electromagnetic interference between the first coil 2104a and the second coil 2104b, and the second self-inducting coil 2124b is for isolating between the second coil 2104b and the third coil 2104c. Electromagnetic interference.

Those skilled in the art will appreciate that the isolation device should be determined in accordance with the number of coil segments on the insulating top plate of the inductively coupled plasma processing device. The more coils are partitioned, the more isolation devices are, the better the isolation effect is, and the plasma distribution in the chamber is more uniform. The invention is applicable to inductively coupled plasma processing devices above two coil sections.

FIG. 6 is a schematic structural view of an inductively coupled plasma processing apparatus according to another embodiment of the present invention. As shown in FIG. 6, the present invention can also provide a movable self-induction coil 2125 between the center coil 2105a and the peripheral coil 2105b to isolate the magnetic fields generated by the center coil 2105a and the peripheral coil 2105b from each other and through the self-inducting coil. The movement of the position optimizes the isolation effect, eliminates mutual interference between the magnetic fields, and improves the uniformity of the plasma density distribution. Specifically, in the embodiment, the inductively coupled plasma processing apparatus 200 further includes a movable bracket (not shown) to drive the self-inductive coil 2125 to move in a direction perpendicular to the insulating top plate 204, that is, in the figure. Move in the vertical direction as shown in 6. Due to the limitations of the actual processing technology and equipment size, the size of the self-inducting coil 2125 is limited, and its height is proportional to the height of the reaction chamber, so that there is a magnetic field at the cylindrical opening of the self-inducting coil 2125. The leakage still causes mutual interference between the coils, and the self-inducting coil 2125 of the embodiment can be moved in the vertical direction, so that the fine adjustment of the position of the self-inducting coil 2125 in the vertical direction can be performed during actual use and adjustment. The interference between the leaked magnetic fields minimizes the influence of the plasma distribution and achieves the best isolation effect.

In addition, the self-inductive coil provided by the present invention is connected with a cooling device for cooling the heat generated during the self-induced current of the self-induced coil. Illustratively, the cooling device may be wrapped around the circumference of the coil as a self-inductive coil, and a cooling gas/liquid is introduced into the cooling device and a cooling gas/liquid circulation device is externally connected. As another example, a coil as a self-inducting coil is hollowed out into a hollow structure, and a cooling gas/liquid is introduced therein, and a cooling gas/liquid circulation device is externally used as a cooling device. Even in the present invention, a blowing device can be connected as a cooling device beside the self-inductive coil. Those skilled in the art will appreciate that cooling devices are well established in the art and that the present invention is not limited to any of the exemplary cooling devices above. For the sake of brevity, I will not repeat them.

Fig. 7 is a schematic view showing the comparison of the technical effects of the prior art, which shows a magnetic field distribution and a plasma concentration distribution of the entire chamber obtained by taking the origin o of the substrate W as a center tangent. As shown in Fig. 7, the intensity of the magnetic field generated by the center coil 102a and the peripheral coil 102b is shown by the shading around it, and it is understood that crosstalk occurs in both of the regions a. The lower portion of Fig. 7 shows the intensity distribution of the plasma concentration above the substrate W in a circle and its color depth, wherein the darker the color, the larger the plasma concentration, and the lighter the color, the smaller the plasma concentration. As shown in Fig. 7, in the central region near the origin o of the substrate W and the edge region away from the origin o, the plasma concentration varies greatly, and the plasma concentration distribution on the surface of the substrate W is uniform. Poor, so the uniformity of the process is also relatively poor.

Fig. 8 is a schematic view showing the comparison of the technical effects of the present invention, showing a magnetic field distribution and a plasma concentration distribution of the entire chamber obtained by taking the origin o of the substrate W as a center tangent. As shown in Fig. 8, the intensity of the magnetic field generated by the center coil 2101a and the peripheral coil 2101b is indicated by the shading around it, and it is understood that the mutual crosstalk between the center coil 2101a and the adjacent region b of the peripheral coil 2101b is greatly reduced. The magnetic field generated by the center coil 2101a and the peripheral coil 2101b is isolated. The lower portion of Fig. 8 shows the intensity distribution of the plasma concentration above the substrate W in a circle and its color depth, wherein the darker the color It means that the larger the plasma concentration, the lighter the color, the smaller the plasma concentration. As shown in Fig. 8, in the central region near the origin o of the substrate W and the edge region away from the origin o, the plasma concentration variation is not large, and the uniformity of the plasma concentration distribution on the surface of the substrate W is obtained. Greatly improved, so the uniformity of the process has been greatly improved.

A second aspect of the invention provides an inductively coupled plasma processing apparatus, wherein the inductively coupled plasma processing apparatus includes the self-inducting coil of the first aspect of the invention.

The method of the present invention provides a method of manufacturing a semiconductor substrate, wherein the method is carried out in the inductively coupled plasma processing apparatus according to the first aspect of the present invention.

As shown in FIG. 2, the method of manufacturing a semiconductor substrate includes: placing a substrate W on a base 206 in the inductively coupled plasma processing apparatus 200; and placing a self-inducting coil 2121 onto the top plate. Between the center coil 2101a and the peripheral coil 2101b; a gas injector (not shown) for supplying a process gas to the inductively coupled plasma processing apparatus; applying radio frequency energy to the center coil 210a through the first RF power source 2081a, The second RF power source 2081b applies RF energy to the peripheral coil 210b to process the substrate W, and causes the self-induction coil 2121 to self-induced current opposite to the adjacent center coil 2101a and the peripheral coil 2101b. To generate a magnetic field opposite to the direction of the adjacent center coil 2101a and the peripheral coil 2101b, wherein the self-inductive coil 2121 is not grounded.

It should be noted that in the prior art, the self-inductive coil of the inductively coupled plasma processing apparatus generally functions as a "resistance". Specifically, conventional techniques generally provide an isolation baffle between the inductive coupling coils of the inductively coupled plasma processing apparatus, such as an isolation baffle to electromagnetically The mask material is made so that the magnetic field lines of adjacent inductive coupling coils can be effectively blocked within the height range of the isolation baffle. Moreover, the isolation baffle of the prior art is usually grounded, so that the induced current in the horizontal direction is effectively masked and its potential is zero. The self-inductive coil of the present invention utilizes such induced current, so that no grounding is required. In addition, the isolation baffles of the prior art generally have a predetermined height, and the magnetic field lines between adjacent inductive coupling coils are effectively isolated within a predetermined height range, but if they are outside the predetermined range, between adjacent inductive coupling coils The magnetic field lines will cross each other. As is well known, the area inside the vacuum processing chamber is very precious, and the isolation baffle cannot reach a high height, and it is impossible to completely isolate the adjacent inductive coupling coil. However, since the self-inductive coil of the present invention can self-sensing almost the same amount of current as the adjacent coils, it can automatically cancel the crosstalk of the adjacent coils, so that regardless of its height, it can function to isolate adjacent coils, which is even more The advantages of the present invention are illustrated.

In addition, the self-inductive coil for the inductively coupled plasma processing apparatus provided by the present invention does not need to externally connect any power supply device or ground terminal as long as there is an inductive coupling coil around it and the inductive coupling coil is energized and generates a current. The self-inductive coil will quickly and automatically generate a magnetic field opposite to the direction of the adjacent inductive coupling coil, thereby isolating the mutual crosstalk of adjacent inductively coupled coils. Those skilled in the art should understand that the volume in the vacuum processing device is very precious, and the self-inductive coil provided by the invention saves the chamber volume, reduces the cost, and saves resources without externally connecting any device.

Although the present invention has been described in detail by the preferred embodiments thereof, it should be understood that the foregoing description should not be construed as limiting. Various modifications and alterations of the present invention will be apparent to those skilled in the art. Accordingly, the scope of the invention should be defined by the appended claims.

200‧‧‧Inductively coupled plasma processing unit

202‧‧‧Metal sidewall

204‧‧‧Insulated roof

206‧‧‧Abutment

2081a‧‧‧First RF power supply

2081b‧‧‧second RF power supply

2101a‧‧‧Center coil

2101b‧‧‧Circumference

2121‧‧‧Self-induction coil

C1‧‧‧ magnetic field

C2‧‧‧ magnetic field

C3‧‧‧ magnetic field

W‧‧‧ substrates

Claims (8)

A self-inductive coil for an inductively coupled plasma processing apparatus, wherein the inductively coupled plasma processing apparatus includes a closed casing including a top plate, wherein the inductively coupled plasma processing apparatus includes An inductive coupling coil on the top plate, the inductive coupling coil is divided into a plurality of regions corresponding to a plurality of regions of the substrate to emit radio frequency energy into the closed casing, and at least two regions are disposed between the inductive coupling coils There is at least one self-inductive coil, the self-inductive coil includes a multi-turn coil structure, and the number of turns of the self-inductive coil is adjusted according to an electric field to be isolated and a volume of the inductively coupled plasma processing apparatus, when inductively coupled When the coil is energized, the self-inductive coil induces a current opposite to an adjacent inductive coupling coil to generate a magnetic field opposite to an adjacent inductive coupling coil, wherein the self-inductive coil is ungrounded And the self-induction coil has a hollow portion for supplying a cooling gas or a cooling liquid And the inductively coupled plasma processing apparatus further comprises a movable support to drive the self-induction coil is moved in a direction perpendicular to the plane of the inductively coupled coil is determined. The self-inductive coil according to claim 1, wherein the inductively coupled plasma processing apparatus includes two regions of inductive coupling coils respectively corresponding to a central region and a peripheral region of the substrate. The self-inductive coil of claim 1, wherein the material of the self-inductive coil comprises aluminum or copper. The self-inductive coil of claim 1, wherein the self-inductive coil is connected with a cooling device for cooling heat generated by the self-induced current of the self-induced coil. The self-inducting coil of claim 4, wherein the cooling device is wrapped around a periphery of the self-inducting coil, and a cooling gas or liquid is introduced into the cooling device, and an external cooling gas or liquid is supplied. Cooling gas or liquid circulation device. The self-inductive coil of claim 4, wherein the cooling device is a blowing device disposed beside the self-inducting coil. An inductively coupled plasma processing apparatus comprising a closed casing, the closed casing comprising a top plate, wherein the inductively coupled plasma processing apparatus comprises any one of claims 1 to 6 A self-inducting coil, and the self-inductive coil is located above the top plate. A method of manufacturing a semiconductor substrate, wherein the method is carried out in an inductively coupled plasma processing apparatus comprising the self-inducting coil according to any one of claims 1 to 6, characterized in that: Forming a substrate on the base in the inductively coupled plasma processing apparatus; placing at least one self-inductive coil between the inductive coupling coils of at least two regions on the top plate; supplying a processing gas to the inductively coupled plasma a gas injector of the body treatment device; applying radio frequency energy to the inductive coupling coil to process the substrate, and causing the self-induction coil to induce a current opposite to an adjacent inductive coupling coil to generate a sum Adjacent inductive coupling coils have opposite magnetic fields, wherein the self-inductive coils are ungrounded.