TWI569693B - A plasma processing apparatus, a plasma generating apparatus, an antenna structure, and a plasma generating method - Google Patents

Description

Plasma processing device, plasma generating device, antenna structure, and plasma generating method

The present invention relates to a plasma processing apparatus, a plasma generating apparatus, an antenna structure, and a plasma generating method for generating plasma using an ICP (Inductive Coupling Plasma) antenna.

In a plasma processing apparatus including an ICP (Inductive Coupling Plasma) antenna having a chamber and disposed outside the chamber, the ceiling portion of the chamber facing the ICP antenna is composed of a dielectric material such as quartz. The electric window is composed. In the plasma processing apparatus, a high-frequency current flows through an ICP antenna connected to a high-frequency power source, and the high-frequency current generates magnetic lines of force for the ICP antenna. The generated magnetic lines of force pass through the dielectric window to create a magnetic field along the ICP antenna within the chamber. When the magnetic field changes with time, an induced field is generated, and the electrons accelerated by the induced field collide with molecules or atoms of the processing gas introduced into the chamber to generate plasma. Since the induction field is generated along the ICP antenna, the plasma is also generated along the ICP antenna in the chamber.

The dielectric window must be separated from the inside of the chamber separated by the decompression environment and the chamber outside the atmospheric pressure environment. Therefore, it is necessary to ensure the pressure resistance. Poor rigidity thickness. In addition, since the substrate to be subjected to the plasma treatment is predicted to be accommodated in the chamber, for example, the FPD (Flat Panel Display) is expected to be enlarged in size, so that the dielectric window facing the substrate must be enlarged, and it is necessary to ensure that it is The rigidity of the enlargement is required, so the dielectric window must be made thicker.

However, as the thickness of the dielectric window is increased, the weight of the dielectric window is increased, and the cost is also increased. Therefore, it is proposed to form a cavity by a conductive window composed of a highly rigid and inexpensive conductor such as metal. The ceiling of the room. Since the conductor window shields the magnetic field lines by the metal, a gap penetrating through the conductor window is provided, and the magnetic flux passes through the slit. However, since the number or size of the slits to be provided is limited, in the conductor window, the transmission efficiency of the magnetic lines of force is lowered, and as a result, the generation efficiency of the plasma in the chamber is lowered.

Further, it is proposed to provide a floating coil having a capacitor outside the chamber and to be provided in the vicinity of the ICP antenna (for example, refer to Patent Document 1). In the floating coil, the electromagnetic induction generated by the magnetic lines generated by the ICP antenna flows an induced current, and the induced current generates magnetic lines of force in the floating coil, and the generated magnetic lines are generated through the dielectric window along the floating coil in the chamber. magnetic field. That is, in the chamber, not only the magnetic field along the ICP antenna but also the magnetic field along the floating coil is generated, so that the floating coil functions as an auxiliary antenna, and the induced field generated in the chamber becomes strong, and as a result, the plasma can be prevented. The efficiency of generation is reduced.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2011-119659

In the ICP antenna that faces the conductor window, although the technique of applying the above-described Patent Document 1 is used to reinforce the induction field, in the technique of Patent Document 1, it is necessary to provide an ICP antenna or a separate floating from the conductor window. Since the coil is placed, the configuration of the device becomes a complicated problem.

An object of the present invention is to provide a plasma processing apparatus, a plasma generating apparatus, an antenna structure, and a plasma generating method which can simplify the configuration of the apparatus and prevent the plasma generation efficiency from being lowered.

In order to achieve the above object, a plasma processing apparatus according to the first aspect of the invention includes: a processing chamber for accommodating a substrate; a mounting table disposed inside the processing chamber to mount the substrate; and an external portion of the processing chamber And an inductive coupling antenna that is disposed opposite to the mounting table and connected to the high-frequency power source, wherein the plasma processing apparatus includes a window member formed of a conductor and the opposite side of the inductive coupling antenna a wall portion of the processing chamber, the wall portion not directly electrically electrically connected to the other wall portion of the processing chamber, and interposed between the mounting table and the inductive coupling antenna; and a wire connected at both ends thereof In the window member, the window member and the wire form a closed circuit, and the wire has at least one capacitor.

In the plasma processing apparatus according to the first aspect of the invention, in the plasma processing apparatus according to the first aspect of the invention, the electrostatic capacitance of the capacitor is adjusted such that the inductance of the closed circuit becomes negative.

The plasma processing apparatus according to claim 3, wherein in the plasma processing apparatus according to claim 1 or 2, the connection between the lead wire and the window member is changed in response to a plasma distribution in the processing chamber. position.

The plasma processing apparatus according to any one of claims 1 to 3, wherein the window member is divided into a plurality of divided pieces, corresponding to the plasma processing apparatus according to any one of claims 1 to 3 The lead wire is provided on at least one of the divided pieces, and the split piece corresponding to the wire is connected to both ends of the wire.

The plasma processing apparatus according to any one of claims 1 to 3, wherein the window member is divided into a plurality of divided pieces, and the wire is One end is connected to one of the divided pieces, and the other end of the wire is connected to the other divided piece, and the one divided piece and the other divided piece are connected by a wire different from the wire.

The plasma processing apparatus according to claim 5, wherein the inductive coupling antenna is oriented only toward the one divided piece.

The plasma processing apparatus according to any one of claims 1 to 3, wherein the window member is divided into a plurality of divided pieces, one of the wires The end is connected to one of the divided pieces, and the other end of the wire is connected to the other divided piece, the one divided piece and the other divided piece are adjacent to each other, and the dielectric material disposed between the divided pieces is The electrodes are separated and not in direct contact with each other, and a portion of the dielectric between the divided piece and the other divided pieces is formed relatively thin.

The plasma processing apparatus according to any one of claims 1 to 7, wherein the wiring is wound to be formed by the inductive coupling antenna. The passing surface through which the magnetic lines of force pass.

The plasma processing apparatus according to any one of claims 1 to 8, wherein the capacitor is a capacitor variable capacitor, and the electric power in the processing chamber is used in the plasma processing apparatus according to any one of claims 1 to 8. The capacitance of the capacitor is adjusted by at least one of the density and the density distribution of the slurry.

In order to achieve the above object, the plasma generating apparatus according to claim 10 is characterized in that a plasma is generated in a decompression chamber, and the plasma generating apparatus is characterized in that: the inductive coupling antenna is disposed in the decompression Connected to the high-frequency power source outside the chamber; a window member composed of a conductor interposed between the inductive coupling antenna and the plasma in the decompression chamber; and a wire connected to the window at both ends The member, the window member and the wire form a closed circuit, and the wire has at least one capacitor.

In the plasma processing apparatus according to claim 10, in the plasma processing apparatus according to claim 10, the electrostatic current of the capacitor is adjusted so that the inductance of the closed circuit becomes negative. Rong.

The plasma processing apparatus according to claim 10, wherein the window member is divided into a plurality of divided pieces, and one end of the wire is connected to a plasma processing apparatus according to claim 10; In the split piece, the other end of the wire is connected to the other divided piece, and the one divided piece and the other divided piece are connected by a wire different from the wire.

In order to achieve the above object, an antenna structure according to claim 13 includes an inductive coupling antenna connected to a high-frequency power source, and the antenna structure is characterized in that: a window member including a conductor is provided And between the inductive coupling antenna and the plasma generated by the inductive coupling antenna; and a wire connected to the window member at both ends, wherein the window member and the wire form a closed circuit, and the wire has at least one capacitor.

In the antenna structure according to the fourteenth aspect of the invention, in the antenna structure according to claim 14, the capacitance of the capacitor is adjusted so that the inductance of the closed circuit becomes negative.

The antenna structure according to claim 13 or claim 14, wherein the window member is divided into a plurality of divided pieces, and one end of the wire is connected to the divided piece. The other end of the wire is connected to the other divided piece, and the divided piece and the other divided piece are connected by a wire different from the wire.

In order to achieve the above objectives, the scope of patent application is 16 The plasma generation method described is a plasma generation method using an antenna structure including an inductive coupling antenna connected to a high-frequency power source, and an electric conductor interposed between the inductive coupling antenna and the plasma. a window member, and a wire, wherein the wire has at least one capacitor, and the plasma generating method is characterized in that both ends of the wire are connected to the window member to form a closed circuit, and the inductance of the closed circuit is negative. The electrostatic capacitance of the above capacitor.

The plasma generation method according to claim 16, wherein the capacitor is a capacitor variable capacitor, and at least one of a density and a density distribution of the plasma is required. The electrostatic capacitance of the above capacitor is adjusted.

According to the present invention, a closed circuit is formed at both ends of a wire connecting wire formed by a conductor, in opposition to an inductive coupling antenna connected to a high-frequency power source, and the wire has at least one capacitor. Accordingly, the magnetic field generated from the inductively coupled antenna generates an induced current in a closed circuit by electromagnetic induction, and the induced current generates a magnetic field along a window member constituting the closed circuit, and an induced field is generated along the magnetic field generated by the window member, and the result is obtained. Since the plasma is generated, the inductance of the closed circuit can be adjusted by changing the capacitance of the capacitor to control the induced current generated in the closed circuit, and it is not necessary to provide an independent floating coil to prevent the plasma generation efficiency from deteriorating. That is, the constitution of the apparatus can be simplified, and the generation efficiency of the plasma can be prevented from being lowered.

PS‧‧‧Processing space

S‧‧‧Substrate

10‧‧‧ Plasma processing unit

11‧‧‧ chamber

12‧‧‧ mounting table

13‧‧‧ICP antenna

14‧‧‧Window components

28, 36‧‧‧ wires

29‧‧‧ Capacitors

30‧‧‧Closed

35, 39‧‧‧ Segments

38‧‧‧Dielectric

40‧‧‧ Plasma generator

Fig. 1 is a cross-sectional view schematically showing the configuration of a plasma processing apparatus according to an embodiment of the present invention.

Fig. 2 is a perspective view schematically showing a configuration of a window member and an ICP antenna in Fig. 1;

Fig. 3 is a view for explaining the induced current generated by the closed circuit in Fig. 2.

Fig. 4 is a graph showing the relationship between the presence or absence of a closed circuit and the distribution of electron density in the processing space.

Fig. 5 is a perspective view showing a first modification of the window member and the ICP antenna in Fig. 2;

Fig. 6 is a perspective view showing a second modification of the window member and the ICP antenna in Fig. 2;

Fig. 7 is a perspective view showing a third modification of the window member and the ICP antenna in Fig. 2;

Fig. 8 is a perspective view showing a fourth modification of the window member and the ICP antenna in Fig. 2;

Fig. 9 is a perspective view showing a fifth modification of the window member and the ICP antenna in Fig. 2;

Fig. 10 is a perspective view showing a sixth modification of the window member and the ICP antenna in Fig. 2;

Fig. 11 is a perspective view showing a seventh modification of the window member and the ICP antenna in Fig. 2;

Fig. 12 is a perspective view showing an eighth modification of the window member and the ICP antenna in Fig. 2;

Fig. 13 is a perspective view showing a ninth modification of the window member and the ICP antenna in Fig. 2;

Fig. 14 is a perspective view showing a tenth modification of the window member and the ICP antenna in Fig. 2;

Fig. 15 is a perspective view showing an eleventh modification of the window member and the ICP antenna in Fig. 2;

Fig. 16 is a cross-sectional view schematically showing the configuration of a plasma processing apparatus according to an embodiment of the present invention.

Hereinafter, the embodiment of the present invention will be described with reference to the drawings.

First, a plasma processing apparatus relating to an embodiment of the present invention will be described.

Fig. 1 is a cross-sectional view schematically showing the configuration of a plasma processing apparatus according to an embodiment of the present invention.

In the first embodiment, the plasma processing apparatus 10 includes a chamber 11 (a processing chamber, a decompression chamber) that accommodates, for example, a glass substrate (hereinafter simply referred to as "substrate") S for FPD, and is disposed in the chamber. The mounting table 12 on which the substrate S is placed on the bottom of the chamber 11, and the ICP antenna 13 (inductive coupling antenna) disposed outside the chamber 11 so as to face the mounting table 12 inside the chamber 11, and the cavity Ceiling of chamber 11, between placement Window member 14 between stage 12 and ICP antenna 13.

The chamber 11 has a slightly frame shape and is set to accommodate a size of the substrate S of the 10th generation having a size of, for example, 2880 mm × 3130 mm. The chamber 11 has an exhaust device 15 that evacuates the chamber 11 so that the inside of the chamber 11 becomes a reduced pressure environment. Further, the outside of the chamber 11 is an atmospheric environment, and the window member 14 partitions the inside and the outside of the chamber 11. The window member 14 is composed of a conductor such as a metal such as aluminum or a semiconductor such as tantalum.

The window member 14 is supported by the support portion 2 provided in the chamber 11 at least via an insulating member or an insulating film (none of which is not shown). Accordingly, the window member 14 and the chamber 11 are not in direct contact and are not electrically conductive. Further, by controlling the insulating member between the insulating window member 14 and the chamber 11, or the thickness of the insulating film, inductive coupling between the window member 14 and the chamber 11 can also be controlled.

The window member 14 has a size that covers at least the entire size of the substrate S placed on the mounting table 12. Further, the window member 14 may be configured from a plurality of divided pieces 35 as will be described later.

The mounting table 12 is composed of a conductive member, and has a rectangular parallelepiped carrier 16 that functions as a base, and an electrostatic chuck 17 that is formed on the upper surface of the carrier 16. The carrier 16 is connected to the high frequency power source 20 via the power supply rod 18 and the matching unit 19. The high-frequency power source 20 supplies relatively low-frequency high-frequency power to the carrier 16, for example, high-frequency power of 13.56 MHz or less, and a bias potential is generated in the carrier 16. Accordingly, in the plasma generated in the processing space PS between the mounting table 12 and the window member 14, The ions are introduced into the substrate S placed on the mounting table 12.

The electrostatic chuck 17 is composed of a dielectric member in which the electrode plate 21 is housed, and a DC power source 22 is connected to the electrode plate 21. The electrostatic chuck 17 electrostatically adsorbs the substrate S to the mounting table 12 by an electrostatic force caused by a DC voltage applied from the DC power source 22.

A processing gas introduction port 23 is provided in the side wall of the chamber 11, and the processing gas supplied from the processing gas supply device 24 is introduced into the chamber 11. However, it is preferable that the processing gas is supplied from the upper portion of the chamber 11 from the side wall of the chamber 11 from the viewpoint of the uniformity of the treatment. Therefore, even when the window member 14 is formed by the plurality of divided pieces 35, even A gas introduction port may be provided in the beam portion that supports each of the divided pieces 35.

The ICP antenna 13 is formed of an annular wire disposed along the upper surface of the window member 14 or a conductor plate, and is connected to the high-frequency power source 26 via the matching unit 25. Also, in the specification and the patent application, the wires and the conductor plates are collectively referred to as wires.

In the plasma processing apparatus 10, a high-frequency current flows through the ICP antenna 13, and the high-frequency current generates magnetic lines of force on the ICP antenna 13. When the generated magnetic field lines are formed into a window member by a dielectric as in the prior art, although passing through the window member, as in the present embodiment, in the case where the window member 14 is formed of a conductor, the periphery of the window member 14 is passed. In the case where the window member 14 is formed with a slit, when the window member 14 is formed by the plurality of divided pieces 35 through the slit, a magnetic field is formed in the chamber 11 through the gap between the divided pieces 35. When the magnetic field changes with time, an induction field is generated, and the electrons accelerated by the induction field and the processing gas introduced into the chamber 11 The molecules or atoms collide to produce plasma.

The ions in the generated plasma are introduced to the substrate S by the bias potential of the carrier 16, and the radicals in the plasma move to reach the substrate S, and each pair of substrates S is subjected to plasma treatment, such as physics. Etching treatment or chemical etching treatment.

Fig. 2 is a perspective view schematically showing a configuration of a window member and an ICP antenna in Fig. 1;

In Fig. 2, the window member 14 has a rectangular shape, and the ICP antenna 13 has a parallel portion 13a arranged in a straight line parallel to the window member 14, and two vertically rising from the both ends of the parallel portion 13a to the window member 14. Vertical portions 13b, 13c. The parallel portion 13a is partially disposed along the diagonal of the window member 14, and the vertical portion 13b is connected to the high frequency power source 26 via the matching unit 25, and the vertical portion 13c is grounded. The insulating portion 27 is disposed between the connecting portion 13d of the parallel portion 13a and the vertical portion 13b and the connecting portion 13e of the parallel portion 13a and the vertical portion 13c, and the window member 14, and the ICP antenna 13 is insulated from the window member 14.

Furthermore, the plasma processing apparatus 10 has a wire 28 that is connected at both ends to two vertices 14a, 14b that are diagonal to one of the window members 14, the wire 28 having a capacitor 29.

The wire 28 and the window member 14 form an annular closed circuit 30 as indicated by a broken line in the figure. The closed circuit 30 does not exist in a plane parallel to the window member 14, and the wire 28 is present in such a manner that the face of the closed circuit 30 and the window member 14 intersect. Both ends are connected to the window member 14. Furthermore, the parallel portion 13a of the ICP antenna 13 is disposed along the upper surface of the window member 14, so the ICP antenna 13 and Closed road 30 is close. Further, in the present embodiment, the ICP antenna 13, the window member 14, and the wires 28 constitute an antenna structure.

Fig. 3 is a view for explaining the induced current generated by the closed circuit in Fig. 2.

In FIG. 3, when the high-frequency current 31 flows through the ICP antenna 13, the high-frequency power source 31 generates magnetic lines 32 around the ICP antenna 13. Since the closed circuit 30 is close to the ICP antenna 13, the annular portion 30a formed by the magnetic field lines 32 around the ICP antenna 13 passing through the closed circuit 30 is generated. At this time, the induced current 33 flows through the closed circuit 30 by the electromagnetic induction of the magnetic lines 32, and the induced current 33 causes the magnetic lines of force passing through the annular portion 30a (hereinafter referred to as "the secondary magnetic lines") 34.

In the present embodiment, a magnetic field (hereinafter referred to as a "main magnetic field") is generated in the processing space PS by the magnetic force line 32 through the peripheral portion of the window member 14, etc., but the magnetic lines 32 are distributed along the window member 14, so the main A magnetic field is also generated along the window member 14. In addition, a magnetic field (hereinafter referred to as "sub-magnetic field") is generated in the processing space PS by the peripheral magnetic field 34 or the peripheral portion of the window member 14, but the auxiliary magnetic lines 34 are also generated along the window member 14. Therefore, the main magnetic field and the secondary magnetic field overlap in the processing space PS.

At this time, in the processing space PS, if the main magnetic field and the secondary magnetic field are reversed and offset each other, the induced field generated by the magnetic field in the processing space PS becomes weak, and the plasma generation efficiency is lowered.

Therefore, in the present embodiment, in order to make the directions of the main magnetic field and the sub magnetic field the same direction, the flow direction of the induced current 33 is set to be the same as the direction in which the high frequency current 31 flows. As in the above patent document 1 As disclosed, the induced current 33 flowing through the closed circuit 30 is expressed by the following approximate expression (1).

I _IND M-MωI _RF /(L _S -1/C _S ω) (1) Here, I _IND is an induced current 33, M is a mutual inductance between the ICP antenna 13 and the closed circuit 30, and ω is a frequency number. I _RF is the high frequency current 31, L _S is the self inductance of the closed circuit 30, C _S is the static capacitance of the capacitor 29, and L _S -1/C _S ω is the inductance of the closed circuit 30.

With the above approximation (1), when the inductance of the closed circuit 30 is made negative, the sign (positive or negative) of I _IND (induced current 33) becomes the same as the sign of I _RF (high-frequency current 31) due to the induced current. In the present embodiment, the capacitance (Cs) of the capacitor 29 is adjusted so that the inductance of the closed circuit 30 becomes negative. Further, when the capacitor 29 is a capacitor-fixed capacitor, the capacitance is adjusted instead of the capacitor 29.

As described above, by making the inductance of the closed circuit 30 negative, the flow direction of the induced current 33 can be made the same as the flow direction of the high-frequency current 31, and the main magnetic field and the secondary magnetic field can be made the same direction in the processing space PS, and can be enhanced in the same direction. Processing the induction field generated by the space PS. As a result, for example, even when the magnetic force line 32 is attenuated when it reaches the processing space PS through the peripheral edge portion or the like of the window member 14, it is possible to prevent the plasma generation efficiency from deteriorating.

That is, when the plasma processing apparatus 10 according to the present embodiment is used, it is not necessary to provide a separate floating coil, the configuration of the apparatus can be simplified, and the generation efficiency of the plasma can be prevented from being lowered.

Furthermore, in order to efficiently generate the induced current 33, it is preferable to reduce the absolute value of the inductance of the closed circuit 30 by the approximate expression (1), and to increase the electrostatic capacitance of the capacitor 29.

Fig. 4 is a graph showing the relationship between the presence or absence of a closed circuit and the distribution of electron density in the processing space.

The inventors of the present invention removed the insulating material 27 in the plasma processing apparatus 10, and directly connected the ICP antenna 13 to the window member 14 at the connecting portions 13d and 13e, and indicated by "●" as the window member 14 and the mounting table. 12 constitutes an electron density when the parallel plate electrode functions, and "▲" indicates that the capacitance of the capacitor 29 is extremely small, so that the inductance of the closed circuit 30 becomes extremely large without causing the induced current 33 to flow through the closed circuit 30, only When the ICP antenna 13 functions, the electron density is increased by "X", and the capacitance of the capacitor 29 is increased to reduce the inductance of the closed circuit 30, so that the induced current 33 flows through the closed circuit 30, and the ICP antenna 13 is not only closed. 30 flows the induced current 33, and the closed circuit 30 also serves as the electron density at the time the antenna functions.

When the window member 14 functions as a parallel plate electrode that is formed in parallel with the mounting table 12, the plasma is uniformly distributed in the processing space PS and the electron density is uniform. However, since only the electric field is generated in the processing space PS, When a magnetic field is generated, it is understood that the electrons do not accelerate in the processing space PS, and the molecules or electrons of the processing gas do not collide. As a result, the plasma generation efficiency is lowered, and the electron density is low as a whole.

Further, when the ICP antenna 13 is only functioned, although the main magnetic field is generated in the processing space PS, the parallel portion 13a does not exist. In the vicinity of the two apexes 14a, 14b of the window member 14, the main magnetic field becomes particularly strong in the vicinity of the center portion of the window member 14, and as a result, the electron density becomes extremely high in the vicinity of the center portion of the window member 14.

On the other hand, in the case where the ICP antenna 13 functions as an antenna even in the closed circuit 30, in the processing space PS, since a secondary magnetic field is generated not only in the main magnetic field, it is known that a strong magnetic field is generated in the processing space PS, and as a result, The total electron density of the processing space PS becomes high. In particular, since the two apexes 14a and 14b of the connection position of the wire 28 and the window member 14 are present in the vicinity of the peripheral edge portion of the window member 14, and the magnetic lines of force can pass at a high magnetic flux density, it is understood that the two apexes 14a and 14b are adjacent to each other. The magnetic field becomes stronger, and the electron density is locally higher in the vicinity of the two vertices 14a, 14b.

In other words, when the plasma processing apparatus 10 according to the present embodiment is used, it is understood that since the ICP antenna 13 not only flows the induced current 33 in the closed circuit 30 but also the closed circuit 30 functions as an antenna, it is generated in the processing space PS. A strong magnetic field can increase the efficiency of plasma generation.

Furthermore, as described above, since the connection position of the wire 28 and the window member 14 is such that the magnetic field lines can pass at a high magnetic flux density, the secondary magnetic field can be enhanced in the vicinity of the connection position, so that the plasma distribution of the space PS is handled. By changing the connection position of the wire 28 and the window member 14, the distribution of the plasma in the processing space PS can be made uniform. For example, if the wire 28 is connected to the window member 14 at a position facing the portion where the density of the plasma is to be increased in the processing space PS, the secondary magnetic field in the portion where the density of the plasma is to be increased may be enhanced, and Partially increasing the density of the plasma by the plasma generation efficiency of the secondary magnetic field.

As described above, the present invention has been described using the above embodiments, but the present invention is not limited to the above-described embodiments.

For example, the parallel portion 13a of the ICP antenna 13 does not need to be disposed along the diagonal of the window member 14, and as shown in Fig. 5, it may be arranged to be parallel to the long side of the window member 14 (first deformation) example). Furthermore, the wires 28 need not be connected to the two apexes 14a, 14b of the window member 14, and the connection portion is not particularly limited if the magnetic lines 32 pass through the annular portion 30a of the closed circuit 30 formed simultaneously with the window member 14. For example, when the parallel portion 13a of the ICP antenna 13 is disposed in parallel with the long side of the window member 14, as shown in Fig. 5, even if the wire 28 is connected to the short sides 14c, 14d of the window member 14, The closed circuit 30 may be formed in parallel with the long side of the window member 14.

Further, the wire 28 does not need to be connected to the peripheral portion of the window member 14, as shown in Fig. 6, as long as the magnetic line 32 can pass through the annular portion 30a of the closed circuit 30, even if the wire 28 is connected to the peripheral portion of the window member 14, It is also possible (the second modification). That is, the closed circuit 30 may be smaller than the window member 14. Further, by closing the wire 28 to a position other than the peripheral edge portion of the window member 14, the closed circuit 30 can be narrowed, and the range in which the secondary magnetic field is generated can be limited to improve the locality of the plasma distribution in the processing space PS.

Further, the parallel portion 13a of the ICP antenna 13 may be formed in a coil shape even if it is not formed in a straight line shape as shown in Fig. 7, and even if the wire 28 is The wound magnetic field line 32 can pass through the annular portion 30a of the closed circuit 30, for example, as shown in Fig. 8, the magnetic field line 32 is formed through the surface 30b to form a coil shape. (Fourth modification).

Further, the surface of the closed circuit 30 and the window member 14 do not need to intersect, and the surface of the closed circuit 30 may be parallel to the window member 14 (the fifth modification). At this time, as shown in Fig. 9, the annular portion 28a is formed by the wire 28, and the surface of the annular portion 28a is parallel to the window member 14.

Further, even if the window member 14 is divided into a plurality of divided pieces 35, the divided pieces 35 are separated from each other by a dielectric (not shown) and are not in direct contact with each other (see a sixth modification). . At this time, as shown in FIG. 10, the two adjacent divided pieces 35 are electrically connected to each other by the wires 36 (additional wires), and are connected to the divided piece 35 at one end of the wire 28, and the other of the wires 28 One end is connected to the other divided piece 35. In particular, in a divided piece 35, the edge portion 35a separated from the connecting wire 36 is connected to one end of the wire 28, and even at the other divided piece 35, the other end of the wire 28 is connected to be separated from where the wire 36 is connected. Edge 35b. Accordingly, the closed circuit 30 along the arrangement direction of the adjacent two divided pieces 35 can be formed. Further, as shown in Fig. 11, even the lead wire 36 may have the capacitor 37 (seventh modification).

The number of the divided pieces 35 constituting the closed circuit 30 is not limited to two. For example, when a wide range of secondary magnetic fields are generated in the processing space PS, it is preferable to form the closed circuit 30 by combining three or more divided pieces 35. That is, by changing the combination of the plurality of divided pieces 35, the distribution of the secondary magnetic field in the processing space PS can be arbitrarily adjusted.

Further, the plurality of divided pieces 35 constitute a closed circuit 30 In this case, when the magnetic line 32 can pass through the annular portion 30a of the closed circuit 30, the ICP antenna 13 does not need to face all of the divided pieces 35. For example, even as shown in Fig. 12, one end of the wire 28 is connected to the top 35c of a divided piece 35, and the other end of the wire 28 is connected to the top 35d of the other divided piece 35 with two divided pieces 35 and wires 28. The closed circuit 30 is formed, and the ICP antenna 13 is also opposed to only one divided piece 35 (eighth modification). At this time, since the induced current 33 flows through the other divided pieces 35 constituting the closed circuit 30, a magnetic field can be generated in a portion of the processing space PS facing the other divided pieces 35 that are not opposed to the ICP antenna 13.

Further, in the case where the plurality of divided pieces 35 constitute the closed circuit 30, as shown in Fig. 13, even if one portion 38a of the dielectric 38 between the adjacent two divided pieces 35 is formed thin, At this time, the electrostatic capacitance of one portion 38a which forms a thin dielectric material 38 becomes large, and functions as a capacitor. Therefore, the closed line 30 can be formed in the wire 28 without providing the capacitor 29, so that the configuration of the closed circuit 30 can be simplified and the number of parts can be reduced (ninth modification).

Further, when the window member 14 is divided into the plurality of divided pieces 35, as shown in Fig. 14, the wires 28 are provided corresponding to the respective divided pieces 35, and the two wires 28 are connected to the respective divided pieces 35. At the end, the closed circuit 30 may be formed in each of the divided pieces 35 (the tenth modification). At this time, the secondary magnetic field on the portion of the processing space PS opposed to each of the divided pieces 35 can be individually adjusted, and the plasma distribution in the processing space PS can be finely adjusted.

And, in order to form a uniform electric power in the entire window member 14 Preferably, the slurry is provided with the wire 28 corresponding to all the divided pieces 35, but in the shape of the processing space PS (for example, an asymmetrical shape), the density distribution of the plasma becomes uneven, or an attempt is made to make the plasma. In the case where the density distribution has a deviation, even if not all of the divided pieces 35, the wires 28 may be provided corresponding to a part of the divided pieces 35. In other words, in the present embodiment, the wire 28 may be provided corresponding to at least one of the divided pieces 35 in response to the shape of the processing space PS or the contents of the plasma processing.

Further, the shape of the window member 14 is not limited to a rectangular shape, and may be, for example, a circular shape. At this time, as shown in Fig. 15, the window member 14 is divided into a plurality of divided pieces 39, and the adjacent divided pieces 39 are connected by the wires 28 or the wires 36 to form a closed circuit (Eleventh Modification).

In the plasma processing apparatus 10 described above, the capacitor 29 included in the lead wire 28 is a capacitor having a capacitance fixed, but the capacitor 29 may be constituted by a capacitance variable capacitor. At this time, by adjusting the electrostatic capacitance of the capacitor 29 in accordance with the plasma density in the processing space PS, the value of the induced current 33 is changed, and the intensity of the secondary magnetic field generated in the processing space PS is changed. Accordingly, the density distribution of the plasma in the processing space PS can be adjusted.

Furthermore, since the present invention enhances the plasma generation efficiency, the plasma processing apparatus 10 which not only applies the plasma treatment to the substrate S internally, but also can be applied to the plasma source of the plasma used for various purposes. Plasma generating device. For example, as shown in Fig. 16, the plasma generating apparatus 40 to which the present invention is applied is a component that removes the mounting table 12 and the components related to the mounting 12 from the plasma processing apparatus 10 of Fig. 1 . For example, it can be taken as a remote plasma package that is taken out from the chamber 11 and supplied to other places. Set to use.

13‧‧‧ICP antenna

13a‧‧‧Parallel

13b‧‧‧Vertical

13c‧‧‧Vertical

13d‧‧‧Connecting Department

13e‧‧‧Connecting Department

14‧‧‧Window components

Vertex 14a, 14b‧‧‧

25‧‧‧matcher

26‧‧‧High frequency power supply

27‧‧‧Insulation

28‧‧‧Wire

29‧‧‧ Capacitors

30‧‧‧Closed

Claims (17)

A plasma processing apparatus comprising: a processing chamber for accommodating a substrate; a mounting table on which the substrate is placed inside the processing chamber; and an outside of the processing chamber disposed to face the mounting table and connected An inductive coupling antenna for a high-frequency power supply, characterized in that the plasma processing apparatus includes: a window member formed of a conductor, and a wall portion of the processing chamber facing the inductive coupling antenna, and the processing is not performed The other wall portion of the chamber is electrically electrically connected to the one wall portion and interposed between the mounting table and the inductive coupling antenna; and the wire is connected to the window member at both ends, and the window member and the wire are formed In the case of a closed circuit, the above conductor has at least one capacitor. The plasma processing apparatus according to claim 1, wherein the electrostatic capacitance of the capacitor is adjusted such that the inductance of the closed circuit becomes negative. The plasma processing apparatus according to claim 1, wherein the connection position of the wire and the window member is changed in accordance with the distribution of the plasma in the processing chamber. The plasma processing apparatus according to any one of claims 1 to 3, wherein the window member is divided into a plurality of divided pieces corresponding to the division The wire is disposed on at least one of the sheets, and the split piece corresponding to the wire is connected to both ends of the wire. The plasma processing apparatus according to any one of claims 1 to 3, wherein the window member is divided into a plurality of divided pieces, one end of the wire is connected to a divided piece, and the other end of the wire is The other divided piece is connected to the other divided piece, and the one divided piece and the other divided piece are connected by a wire different from the wire. The plasma processing apparatus according to claim 5, wherein the inductive coupling antenna is only facing the one divided piece. The plasma processing apparatus according to any one of claims 1 to 3, wherein the window member is divided into a plurality of divided pieces, one end of the wire is connected to a divided piece, and the other end of the wire is Connected to the other divided pieces, the one divided piece and the other divided pieces are adjacent to each other, and are separated by a dielectric disposed between the divided pieces and are not in direct contact with each other without being electrically connected to each other. A portion of the dielectric between a divided piece and the other divided pieces is formed to be relatively thin. The plasma processing apparatus according to any one of claims 1 to 3, wherein the wire is wound to form the inductive coupling antenna. The passage of the magnetic lines through. The plasma processing apparatus according to any one of claims 1 to 3, wherein the capacitor is a capacitor variable capacitor, and the capacitor is adjusted in accordance with at least one of a density and a density distribution of a plasma in the processing chamber. Electrostatic capacitance. A plasma generating device for generating plasma in a decompression chamber, the plasma generating device comprising: an inductive coupling antenna disposed outside the decompression chamber and connected to a high frequency power source; a window member formed between the inductive coupling antenna and the plasma in the decompression chamber; and a wire connected to the window member at both ends, wherein the window member and the wire form a closed circuit, and the wire There is at least one capacitor. The plasma generating apparatus according to claim 10, wherein the electrostatic capacitance of the capacitor is adjusted such that the inductance of the closed circuit becomes negative. The plasma generating apparatus according to claim 10, wherein the window member is divided into a plurality of divided pieces, one end of the wire is connected to the divided piece, and the other end of the wire is connected to the other one Split piece, the above-mentioned split piece and the above His split piece is connected by a wire different from the above-mentioned wire. An antenna structure comprising an inductive coupling antenna connected to a high frequency power supply, the antenna structure characterized by: a window member formed of a conductor interposed between the inductive coupling antenna and the inductive coupling And the wires are connected to the window member at both ends, and the window member and the wire form a closed circuit, and the wire has at least one capacitor. The antenna structure according to claim 13, wherein the capacitance of the capacitor is adjusted such that the inductance of the closed circuit becomes negative. The antenna structure according to claim 13 or 14, wherein the window member is divided into a plurality of divided pieces, one end of the wire is connected to one of the divided pieces, and the other end of the wire is connected to the other divided piece The slice, the split piece and the other divided piece are connected by a wire different from the wire. A plasma generation method is a plasma generation method using an antenna structure including an inductive coupling antenna connected to a high-frequency power source, and an electric conductor interposed between the inductive coupling antenna and the plasma a window member, and a wire, wherein the wire has at least one capacitor, and the plasma generating method is characterized in that both ends of the wire are connected to the window member to form a closed circuit, The electrostatic capacitance of the capacitor is adjusted such that the inductance of the closed circuit becomes negative. The plasma generating apparatus according to claim 16, wherein the capacitor is a capacitor variable capacitor, and the capacitance of the capacitor is adjusted in response to at least one of a density and a density distribution of the plasma.