KR101718182B1 - Plasma processing apparatus, plasma producing apparatus, antenna structure, and plasma producing method - Google Patents

Abstract

A plasma processing apparatus capable of simplifying the configuration of the apparatus and preventing deterioration of plasma generation efficiency is provided.
The plasma processing apparatus 10 includes a chamber 11, a mounting table 12 disposed inside the chamber 11 to mount the substrate S thereon, And an ICP antenna 13 connected to the RF power supply 26 and a wall portion of the chamber 11 opposed to the ICP antenna 13 and constituting a wall portion between the mounting table 12 and the ICP antenna 13 A window member 14 made of a conductive material and a lead wire 28 having both ends connected to the window member 14. The window member 14 and the lead wire 28 form a closed circuit, Has a capacitor (29).

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, a plasma generating apparatus, an antenna structure, and a plasma generating method. 2. Description of the Related Art Plasma Processing Apparatus,

The present invention relates to a plasma processing apparatus, a plasma generating apparatus, an antenna structure, and a plasma generating method for generating a plasma using an ICP (Inductive Coupling Plasma) antenna.

In the plasma processing apparatus having the chamber and the ICP (Inductive Coupling Plasma) antenna disposed outside the chamber, the ceiling portion of the chamber facing the ICP antenna is constituted by a dielectric window made of a dielectric, for example, quartz. In this plasma processing apparatus, a high-frequency current flows through the ICP antenna connected to the high-frequency power source, and the high-frequency current generates a magnetic flux line to the ICP antenna. The resulting lines of magnetic force penetrate the dielectric window to generate a magnetic field along the ICP antenna in the chamber. When the magnetic field changes in time, an induced electric field is generated, and electrons accelerated by the induced electric field collide with molecules or atoms of the processing gas introduced into the chamber, and a plasma is generated. Since the induced electric field is generated along the ICP antenna, plasma also occurs in the chamber along the ICP antenna.

Since the dielectric window separates the inside of the chamber, which is the decompression environment, and the outside of the chamber, which is the atmospheric pressure environment, a thickness is required to ensure rigidity that can withstand the pressure difference. Further, since it is expected that the size of a substrate, for example, a FPD (Flat Panel Display) accommodated in the chamber and subjected to the plasma treatment, will advance in the future, it is necessary to enlarge a dielectric window opposed to the substrate, , It is necessary to make the dielectric window thicker.

However, as the thickness of the dielectric window increases, the weight of the dielectric window increases and the cost also increases. Therefore, it is proposed that the ceiling portion of the chamber is constituted by a conductor window made of a conductor having a high rigidity and an inexpensive conductor, . Since the metal shields the magnetic lines of force in the conductor window, slits penetrating the conductor window are provided and the magnetic lines of force are transmitted through the slits. However, since the number and size of the slits to be provided are limited, the transmission efficiency of magnetic lines of force is lowered in the conductive window, and as a result, the efficiency of generating plasma in the chamber is lowered.

On the other hand, it has been proposed to provide a floating coil with a capacitor on the outside of the chamber, in the vicinity of the ICP antenna (see, for example, Patent Document 1). In this floating coil, induction current flows by electromagnetic induction by the magnetic line of force generated by the ICP antenna, and the induction current generates a magnetic flux line in the floating coil. The generated magnetic flux lines penetrate the dielectric window to generate a magnetic field along the floating coil in the chamber. . That is, not only a magnetic field along the ICP antenna but also a magnetic field along the floating coil is generated in the chamber, so that the floating coil plays the role of the auxiliary antenna and the induced electric field generated in the chamber becomes strong. As a result, Can be prevented.

Patent Document 1: Japanese Patent Application Laid-Open No. 11-119659

In the ICP antenna opposed to the conductor window, it is conceivable to reinforce the induction field by applying the technique of the above-described Patent Document 1. However, in the technique of the above-described Patent Document 1, a floating coil independent of the ICP antenna or the conductor window There is a problem that the configuration of the apparatus becomes complicated.

It is an object of the present invention to provide a plasma processing apparatus, a plasma generating apparatus, an antenna structure, and a plasma generating method that can simplify the structure of the apparatus and prevent deterioration of plasma generation efficiency.

In order to achieve the above object, a plasma processing apparatus according to a first aspect of the present invention includes a processing chamber for accommodating a substrate, a mounting table disposed inside the processing chamber and for mounting the substrate thereon, A plasma processing apparatus comprising an inductively coupled antenna disposed to be connected to a high frequency power supply, the plasma processing apparatus comprising: a wall portion of the process chamber opposed to the inductively coupled antenna, A window member made of a conductor and interposed between the mount table and the inductively coupled antenna, and a lead wire having both ends connected to the window member, the window member and the lead wire forming a closed circuit, And the lead wire has at least one capacitor.

The plasma processing apparatus according to claim 2 is characterized in that, in the plasma processing apparatus according to claim 1, the capacitance of the condenser is adjusted so that the reactance of the closed circuit becomes negative.

According to a third aspect of the present invention, in the plasma processing apparatus according to the first or second aspect, the connecting position of the lead and the window member is changed in accordance with the distribution of the plasma in the processing chamber.

In the plasma processing apparatus according to claim 4, in the plasma processing apparatus according to any one of claims 1 to 3, the window member is divided into a plurality of divided pieces, the lead is provided corresponding to at least one of the divided pieces , And both ends of the lead wire are connected to the divided piece provided with the lead wire corresponding thereto.

The plasma processing apparatus according to claim 5 is the plasma processing apparatus according to any one of claims 1 to 3, wherein the window member is divided into a plurality of divided pieces, one end of the conductive line is connected to one of the divided pieces , And the other end of the lead wire is connected to the other divided piece, and the one divided piece and the other divided piece are connected by a lead wire different from the lead wire.

The plasma processing apparatus according to claim 6 is characterized in that, in the plasma processing apparatus according to claim 5, the inductively coupled antenna is opposed to only the one split piece.

The plasma processing apparatus according to claim 7 is the plasma processing apparatus according to any one of claims 1 to 3, wherein the window member is divided into a plurality of divided pieces, one end of the conductive wire is connected to one of the divided pieces, The other end of the lead wire is connected to another one of the divided pieces, the one divided piece and the other divided piece are separated from each other by a dielectric disposed therebetween and are not in direct contact with each other, And a part of the dielectric between the one split piece and the other split piece is formed thin.

The plasma processing apparatus according to claim 8 is characterized in that, in the plasma processing apparatus according to any one of claims 1 to 7, the conductor is wound so as to form a passing surface through which a magnetic force line generated from the inductively coupled antenna passes.

The plasma processing apparatus according to claim 9 is the plasma processing apparatus according to any one of claims 1 to 8, wherein the capacitor is a capacitance variable capacitor, and the density And the electrostatic capacity is adjusted.

In order to achieve the above object, a plasma generating apparatus according to claim 10 is a plasma generating apparatus for generating plasma in a decompression chamber, comprising: an inductively coupled antenna disposed outside the vacuum chamber and connected to a high frequency power source; And a conductor connected to both ends of the window member, wherein the window member and the lead wire form a closed circuit, and the lead wire is connected to at least one capacitor .

The plasma generating apparatus according to claim 11 is characterized in that, in the plasma generating apparatus according to claim 10, the capacitance of the condenser is adjusted such that the reactance of the closed circuit becomes negative.

The plasma generation apparatus according to claim 12 is the plasma generation apparatus according to claim 10 or 11, wherein the window member is divided into a plurality of divided pieces, one end of the conductive wire is connected to one of the divided pieces, Are connected to the other divided pieces, and the one divided piece and the other divided piece are connected to each other by a lead wire different from the lead wire.

In order to achieve the above object, an antenna structure according to a thirteenth aspect of the present invention is an antenna structure including an inductively coupled antenna connected to a high frequency power supply, the antenna structure comprising: A window member made of a conductive material, and a lead wire having both ends connected to the window member, wherein the window member and the lead wire form a closed circuit, and the lead wire has at least one capacitor.

An antenna structure according to claim 14 is characterized in that, in the antenna structure according to claim 13, the capacitance of the capacitor is adjusted so that the reactance of the closed circuit becomes negative.

The antenna structure according to claim 15 is the antenna structure according to claim 13 or 14, wherein the window member is divided into a plurality of divided pieces, one end of the conductive wire is connected to one of the divided pieces, And the one split piece and the other split piece are connected to each other by a lead wire different from the lead wire.

In order to achieve the above object, a plasma generating method according to claim 16 is characterized by comprising an inductively coupled antenna connected to a high frequency power source, a window member comprising a conductor interposed between the inductively coupled antenna and the plasma, and a lead, Characterized in that both ends of the conductor are connected to the window member to form a closed circuit and the capacitance of the capacitor is adjusted so that the reactance of the closed circuit becomes negative .

The plasma generation method according to claim 17 is characterized in that, in the plasma generation method according to claim 16, the capacitor is a capacity variable capacitor, and the capacitance of the capacitor is adjusted along at least one of the density and the density distribution of the plasma do.

According to the present invention, both ends of the conductor are connected to a window member made of a conductor, which faces the inductively coupled antenna connected to the high frequency power source, and a closed circuit is formed, and the conductor has at least one capacitor. Thereby, the magnetic field generated from the inductively coupled antenna generates an induced current in the closed circuit by electromagnetic induction, and the induced current causes a magnetic field along the window member constituting the closed circuit, and a magnetic field generated along the window member induces Thereby generating an electric field and consequently generating a plasma. Therefore, by controlling the reactance of the closed circuit by controlling the reactance of the closed circuit by changing the capacity of the capacitor, the generation efficiency of the plasma is lowered without providing an independent floating coil Can be prevented. In other words, it is possible to simplify the structure of the apparatus and to prevent the lowering of the plasma generation efficiency.

1 is a cross-sectional view schematically showing a configuration of a plasma processing apparatus according to an embodiment of the present invention.
Fig. 2 is a perspective view schematically showing a configuration of a window member and an ICP antenna in Fig. 1. Fig.
3 is a diagram for explaining the induced current generated in the closed circuit in Fig.
4 is a graph showing the relationship between the presence or absence of a closed circuit and the distribution of the electron density in the processing space.
5 is a perspective view showing a first modification of the window member and the ICP antenna of Fig. 2;
6 is a perspective view showing a window member and an ICP antenna according to a second modification of Fig. 2;
Fig. 7 is a perspective view showing a window member and the ICP antenna of the third modification of Fig. 2;
8 is a perspective view showing a fourth variation of the window member and the ICP antenna of Fig. 2. Fig.
Fig. 9 is a perspective view showing a window member and an ICP antenna according to a fifth modification of Fig. 2;
10 is a perspective view showing a window member and an ICP antenna according to a sixth modification of Fig. 2;
11 is a perspective view showing a window member and an ICP antenna according to a seventh modification of Fig. 2;
Fig. 12 is a perspective view showing a window member and an ICP antenna according to a eighth modification of Fig. 2;
Fig. 13 is a perspective view showing a window member and an ICP antenna according to a ninth modification of Fig. 2;
14 is a perspective view showing a window member and an ICP antenna according to a tenth modification of Fig.
Fig. 15 is a perspective view showing a window member and the ICP antenna of the eleventh modification of Fig. 2;
16 is a cross-sectional view schematically showing a configuration of a plasma generating apparatus according to an embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings.

First, a plasma processing apparatus according to an embodiment of the present invention will be described.

1 is a cross-sectional view schematically showing a configuration of a plasma processing apparatus according to an embodiment of the present invention.

1, the plasma processing apparatus 10 includes a chamber 11 (processing chamber, decompression chamber) for accommodating, for example, a glass substrate S for FPD (hereinafter simply referred to as "substrate") S, (12) disposed at the bottom of the chamber (11) and on which the substrate (S) is mounted on the upper surface, and a mounting table (12) disposed outside the chamber (11) An ICP antenna 13 (inductively coupled antenna) and a window member 14 constituting a ceiling portion of the chamber 11 and interposed between the mount table 12 and the ICP antenna 13.

The chamber 11 is substantially cylindrical in shape and is sized to accommodate, for example, a tenth generation substrate S having a size of 2880 mm x 3130 mm. The chamber 11 has an exhaust device 15 and the exhaust device 15 evacuates the chamber 11 to make the inside of the chamber 11 a reduced-pressure environment. On the other hand, the outside of the chamber 11 is an atmospheric pressure environment, and the window member 14 defines the inside and the outside of the chamber 11. The window member 14 is made of a conductor, for example, a metal such as aluminum or a semiconductor, for example, silicon.

The window member 14 is supported by a supporting portion 12 provided in the chamber 11 via at least an insulating member or an insulating film (both not shown). As a result, the window member 14 and the chamber 11 are not in direct contact with each other and do not electrically communicate with each other. It is also possible to control the thickness of the insulating member or the insulating coating that seals between the window member 14 and the chamber 11 so that inductive coupling occurs between the window member 14 and the chamber 11 .

The window member 14 has a size large enough to cover at least the entire surface of the substrate S mounted on the stage 12. Further, the window member 14 may be composed of a plurality of split pieces 35 as described later.

The mount table 12 has a susceptor 16 of a rectangular parallelepiped shape which is made of a conductive member and functions as a base and an electrostatic chuck 17 formed on the upper surface of the susceptor 16. The susceptor 16 is connected to the high frequency power source 20 via the power feed rod 18 and the matching device 19. The RF power supply 20 supplies a relatively low RF power, for example, a RF power of 13.56 MHz or less to the susceptor 16, and generates a bias potential at the susceptor 16. Thus, the ions in the plasma generated in the processing space PS between the mount table 12 and the window member 14 are attracted to the substrate S mounted on the mount table 12.

The electrostatic chuck 17 is constituted by a dielectric member incorporating an electrode plate 21, and a DC power source 22 is connected to the electrode plate 21. The electrostatic chuck 17 electrostatically attracts the substrate S to the mounting table 12 by an electrostatic force caused by a DC voltage applied from the DC power supply 22. [

On the side wall of the chamber 11, a process gas inlet 23 is provided, and a process gas supplied from the process gas supply device 24 is introduced into the chamber 11. It is preferable to supply the process gas from the upper portion of the chamber 11 without leaving the side wall of the chamber 11 from the viewpoint of the uniformity of the processing. 35, it is also possible to provide a gas inlet in the girder portion for supporting each of the divided pieces 35.

The ICP antenna 13 is formed of an annular conductive wire or a conductive plate disposed along the upper surface of the window member 14 and is connected to the high frequency power source 26 through the matching device 25. In the present specification and claims, the conductor and the conductor plate are collectively referred to as a conductor.

In the plasma processing apparatus 10, a high-frequency current flows in the ICP antenna 13, and the high-frequency current generates a magnetic flux line in the ICP antenna 13. [ When the window member 14 is formed of a conductor as in the present embodiment, the generated magnetic force lines are formed in the peripheral portion of the window member 14, When the window member 14 passes through the slit and the slit is formed in the window member 14 and the window member 14 is composed of the plurality of split pieces 35, And constitutes a magnetic field in the chamber 11. When the magnetic field changes in time, an induced electric field is generated, and electrons accelerated by the induced electric field collide with molecules or atoms of the process gas introduced into the chamber 11 to generate plasma.

The ions in the generated plasma are attracted to the substrate S by the bias potential of the susceptor 16, so that the radicals in the plasma move to arrive at the substrate S and are subjected to a plasma treatment, An etching process is performed.

Fig. 2 is a perspective view schematically showing the configuration of the window member and the ICP antenna in Fig. 1. Fig.

2, the window member 14 has a rectangular shape, and the ICP antenna 13 has a straight parallel portion 13a disposed in parallel with the window member 14 and a parallel portion 13b extending from both ends of the parallel portion 13a And two vertical portions 13b and 13c rising vertically with respect to the member 14. The parallel portion 13a is partially disposed along the diagonal line of the window member 14 and the vertical portion 13b is connected to the high frequency power source 26 via the matching unit 25 and the vertical portion 13c is grounded . An insulating material 27 is disposed between the connecting portion 13d of the parallel portion 13a and the vertical portion 13b and the connecting portion 13e of the parallel portion 13a and the vertical portion 13c and the window member 14 And the ICP antenna 13 is insulated from the window member 14.

The plasma processing apparatus 10 also has a lead 28 to which both ends are connected to both apexes 14a and 14b with respect to one diagonal line of the window member 14, (29).

The lead wire 28 and the window member 14 form the annular closed circuit 30 shown by the broken line in the figure but the closed circuit 30 does not exist in the plane parallel to the window member 14, The wire 28 is connected to the window member 14 at both ends so that the window member 14 and the surface where the wire member is present intersects. Since the parallel portion 13a of the ICP antenna 13 is disposed along the upper surface of the window member 14, the ICP antenna 13 and the closed circuit 30 are close to each other. In this embodiment, the ICP antenna 13, the window member 14, and the conductor 28 constitute the antenna structure.

Fig. 3 is a diagram for explaining an induced current generated in the closed circuit in Fig. 2. Fig.

3, when the high-frequency current 31 flows through the ICP antenna 13, the high-frequency current 31 generates a magnetic line of force 32 around the ICP antenna 13. The magnetic force line 32 generated around the ICP antenna 13 passes through the annular portion 30a formed by the closed circuit 30 because the closed circuit 30 is close to the ICP antenna 13. [ At this time, the induction current 33 flows in the closed circuit 30 by the electromagnetic induction of the magnetic force lines 32 and the induction current 33 flows through the magnetic force lines (hereinafter referred to as "Quot; magnetic line of force ") 34 is generated.

In the present embodiment, the magnetic force line 32 generates a magnetic field (hereinafter referred to as a "main magnetic field") in the uniform processing space PS through which the magnetic force line 32 passes the peripheral edge of the window member 14, Because of the distribution along the member 14, the runner system also occurs along the window member 14. The negative magnetic field line 34 also generates a magnetic field (hereinafter referred to as " negative magnetic field ") in the uniform processing space PS through the peripheral edge of the window member 14, Lt; / RTI > Therefore, the main system and the sub system are overlapped in the processing space PS.

At this time, if the main system and the subsidiary system are opposite to each other in the processing space PS, they are canceled each other, so that the induction field generated in the processing space PS is weakened by the magnetic field and the plasma generation efficiency is lowered.

Thus, in this embodiment, the direction in which the induction current 33 flows is made the same as the direction in which the high-frequency current 31 flows in order to orient the main system and the sub system in the same direction. As disclosed in the above-described Patent Document 1, the induced current 33 flowing through the closed circuit 30 is expressed by the following approximate expression (1).

Where I _IND is the induction current 33, M is the mutual inductance between the ICP antenna 13 and the closed circuit 30,? Is the angular frequency, I _RF is the high frequency current 31, L _S is the C _S is the capacitance of the capacitor 29, and L _S -1 / C _S ω is the reactance of the closed circuit 30.

(Positive or negative) of I _IND (induced current 33) is equal to the sign of I _RF (high-frequency current 31) when the reactance of the closed circuit 30 is negative from the approximate expression (1) and, derived because the direction in which the current 33 flows is to be the same as the direction in which the high-frequency current 31 flows, in the present embodiment, the capacitance of the condenser 29 such that the reactance is a negative closed circuit (30) (C _S) Is adjusted. When the capacitor 29 is a capacitance-fixed capacitor, the capacitance is adjusted by exchanging the capacitor 29 with the capacitor 29.

As described above, by setting the reactance of the closed circuit 30 to be negative, the direction in which the induction current 33 flows is the same as the direction in which the high frequency current 31 flows, so that the main system and the subsidiary system are the same in the processing space PS Direction, so that the induced electric field generated in the processing space PS can be strengthened. As a result, even if the magnetic force lines 32 attenuate when reaching the processing space PS, for example, passing through the peripheral edge of the window member 14, the generation efficiency of the plasma can be prevented from being lowered.

That is, according to the plasma processing apparatus 10 according to the present embodiment, it is possible to simplify the structure of the apparatus and to prevent the plasma generation efficiency from deteriorating without providing an independent floating coil.

In order to efficiently generate the induced current 33, it is preferable to reduce the absolute value of the reactance of the closed circuit 30 from the approximate expression (1), and it is preferable to increase the capacitance of the capacitor 29 Do.

4 is a graph showing the relationship between the presence or absence of a closed circuit and the distribution of the electron density in the processing space.

The present inventors have found that the plasma processing apparatus 10 removes the insulating material 27 and directly connects the ICP antenna 13 to the window member 14 with the connection portions 13d and 13e, The electron density in the case of functioning as a parallel plate electrode paired with the mount table 12 is represented by " ", and the reactance of the closed circuit 30 is maximized by minimizing the capacitance of the capacitor 29, The electron density in the case where only the ICP antenna 13 is allowed to function without flowing the induction current 33 in the capacitor 30 is denoted by a triangle and the capacitance of the capacitor 29 is increased and the reactance of the closed circuit 30 is made small The electron density when the induced current 33 flows through the closed circuit 30 and the induction current 33 flows through the closed circuit 30 as well as the ICP antenna 13 and the closed circuit 30 also functions as an antenna, X ".

When the window member 14 functions as a parallel flat plate electrode paired with the mounting table 12, the plasma is evenly distributed in the processing space PS and the electron density becomes uniform. However, only the electric field is generated in the processing space PS, Since no magnetic field is generated, electrons do not accelerate in the processing space PS and do not collide with molecules or electrons of the processing gas as a result, resulting in a decrease in the plasma generation efficiency, and the electron density as a whole is lowered.

Since the parallel portion 13a does not exist in the vicinities of the both apexes 14a and 14b of the window member 14 when the ICP antenna 13 functions only in the processing space PS, Is particularly strong in the vicinity of the central portion of the window member 14, and as a result, the electron density becomes particularly high in the vicinity of the center portion of the window member 14.

On the other hand, when not only the ICP antenna 13 but also the closed circuit 30 function as an antenna, a strong magnetic field is generated in the processing space PS because not only the main system but also the subsidiary system is generated in the processing space PS, It was found that the electron density increases in the entire PS. Particularly, since the two vertexes 14a and 14b, which are the connecting positions of the wire 28 and the window member 14, are located near the periphery of the window member 14 and the magnetic force lines can pass through at high magnetic flux densities , It is found that the subsidiary system is strengthened in the vicinity of both vertexes 14a and 14b, and therefore, the electron density is locally increased in the vicinity of both vertices 14a and 14b.

That is, according to the plasma processing apparatus 10 according to the present embodiment, not only the ICP antenna 13 but also the induction current 33 is supplied to the closed circuit 30 so that the closed circuit 30 also functions as an antenna, It is possible to generate a strong magnetic field to improve the plasma generation efficiency.

Further, as described above, since the magnetic line of force can pass through the connection position between the lead 28 and the window member 14 at a high magnetic flux density and the magnetic flux can be strengthened near the connection position, the processing space PS The distribution of the plasma in the processing space PS can be made uniform by changing the connection position of the lead wire 28 and the window member 14 in accordance with the distribution of the plasma of the plasma. For example, when the conductor 28 is connected to the window member 14 at a position opposite to a portion where the density of the plasma is to be increased in the processing space PS, it is possible to strengthen the subsidiary system in the portion where the density of the plasma is to be increased Thus, it is possible to increase the density of the plasma by improving the efficiency of generation of the plasma by the subsidiary system at the relevant portion.

Although the present invention has been described above by using the embodiments, the present invention is not limited to the above-described embodiments.

For example, the parallel portion 13a of the ICP antenna 13 does not need to be disposed along the diagonal line of the window member 14 but may be arranged parallel to the long side of the window member 14 (First modified example). The wire 28 need not be connected to the apexes 14a and 14b of the window member 14 but may be connected to the magnetic line of force 30a of the closed circuit 30 formed together with the window member 14. [ 32 are allowed to pass, the connection point is not particularly limited. For example, when the parallel portion 13a of the ICP antenna 13 is arranged in parallel with the long side of the window member 14, as shown in Fig. 5, The closed circuit 30 may be connected to the short sides 14c and 14d so as to be parallel to the long sides of the window member 14. [

6, the conductive line 28 is not necessarily connected to the periphery of the window member 14, and as long as the line of magnetic force 32 can pass through the annular portion 30a of the closed circuit 30, (28) may be connected to a portion other than the periphery of the window member (second modified example). That is, the closed circuit 30 may be smaller than the window member 14. Further, by connecting the conductor 28 to a portion other than the peripheral portion of the window member 14 to make the closed circuit 30 smaller, the range of generation of the subsidiary system can be limited so that the local distribution of the plasma distribution in the processing space PS Improvement can be performed.

The parallel portion 13a in the ICP antenna 13 may not be formed in a linear shape. For example, as shown in Fig. 7, the parallel portion 13a may be wound and formed into a coil shape (third modified example) 8, when the magnetic line of force 32 is able to pass through the annular portion 30a of the closed circuit 30, the conductor 28 is also allowed to pass through the passage surface through which the magnetic force line 32 passes 30b may be formed and coiled (fourth modified example).

The surface on which the closed circuit 30 exists and the window member 14 do not need to intersect with each other. For example, the surface on which the closed circuit 30 exists may be parallel to the window member 14 Yes). In this case, as shown in Fig. 9, the annular portion 28a is formed by the conductor 28, and the surface on which the annular portion 28a is present becomes parallel to the window member 14. [

Further, the window member 14 is divided into a plurality of divided pieces 35, and the divided pieces 35 are not separated from each other by a dielectric (not shown) and do not need to come into direct contact with each other so as not to be electrically connected to each other 6 variant example). In this case, as shown in Fig. 10, the adjacent two split pieces 35 are connected to each other by a lead 36 (another lead) and one end of the lead 28 is divided into one split piece 35, and the other end of the lead wire 28 is connected to another divided piece 35. [ Particularly, in one split piece 35, one end of the lead wire 28 is connected to the edge portion 35a which is distant from the place where the lead wire 36 is connected, and in the other split pieces 35, And the other end of the lead wire 28 is connected to the edge portion 35b which is distant from the place where it is connected. Thus, the closed circuit 30 can be formed in accordance with the arrangement direction of the two adjacent divisional pieces 35. As shown in Fig. 11, the conductor 36 may also have a capacitor 37 (seventh modification).

The number of the split pieces 35 constituting the closed circuit 30 is not limited to two and when three or more split pieces 35 are combined in the case of generating a wide system in the processing space PS It is preferable to form the closed circuit 30. That is, by changing the combination of the plurality of split pieces 35, it is possible to arbitrarily adjust the distribution of the subsidiary system in the processing space PS.

When the magnetic force line 32 is allowed to pass through the annular portion 30a of the closed circuit 30, the ICP antenna 13 is arranged in a state in which all the divided pieces 35). One end of the lead wire 28 is connected to the top portion 35c of one split wire 35 and the other end of the wire 28 is connected to the other split wire 35 as shown in Fig. And the ICP antenna 13 may be opposed to only one split piece 35 while the closed circuit 30 is formed by the two split pieces 35 and the lead 28 connected to the portion 35d of the ICP antenna 13 8 variant example). At this time, since the induction current 33 flows in the other divided pieces 35 constituting the closed circuit 30, the part of the processing space PS opposed to the other divided pieces 35, to which the ICP antenna 13 does not oppose, It can cause a magnetic field.

13, a part 38a of the dielectric 38 between the adjacent two divided pieces 35 is formed thinly, as shown in Fig. 13, when the closed circuit 30 is constituted by the plurality of divided pieces 35. Further, At this time, the electrostatic capacity of the portion 38a of the thin dielectric 38 is increased, and functions as a capacitor. Therefore, the closed circuit 30 can be formed without providing the condenser 29 in the conductor 28, thereby making it possible to simplify the structure of the closed circuit 30 and to reduce the number of parts (the ninth modification ).

14, when the window member 14 is divided into the plurality of divided pieces 35, the conductive lines 28 are provided corresponding to each of the divided pieces 35, The closed circuit 30 may be formed in each of the divided pieces 35 by connecting both ends of the conductive line 28 to each of the divided pieces 35 (tenth modified example). In this case, the subsidiary system in the portion of the processing space PS opposed to each of the divided pieces 35 can be individually adjusted, and thus the distribution of the plasma in the processing space PS can be finely adjusted.

In order to form a uniform plasma on the entire surface of the window member 14, it is preferable to provide the conductive lines 28 corresponding to all the divided pieces 35. However, the shape of the processing space PS (for example, In the case where there is a factor such that the density distribution of the plasma becomes uneven or the distribution of the density of the plasma is intentionally intended to be deflected, The conductor 28 may be provided. In other words, in the present embodiment, it suffices that the conductor 28 is provided corresponding to at least one of the dividing pieces 35, depending on the shape of the processing space PS, the content of the plasma processing, and the like.

The shape of the window member 14 is not limited to a rectangle, and may be circular, for example. 15, the window member 14 is divided into a plurality of split pieces 39, and adjacent split pieces 39 are connected to each other by a lead 28 or a lead 36, (The eleventh modification).

In the above-described plasma processing apparatus 10, the capacitor 29 included in the lead 28 is a capacitance-fixed capacitor, but the capacitor 29 may be formed of a capacitance variable capacitor. In this case, the value of the induced current 33 is changed by adjusting the capacitance of the capacitor 29 according to the density of the plasma in the processing space PS, thereby changing the force of the subsidiary system occurring in the processing space PS. Thus, the density distribution of the plasma in the processing space PS can be adjusted.

Further, the present invention can be applied not only to the plasma processing apparatus 10 that performs plasma processing on the substrate S in the inside, but also to a plasma generating apparatus as a plasma source of plasma used for various purposes have. For example, as shown in Fig. 16, the plasma generating apparatus 40 to which the present invention is applied includes a plasma processing apparatus 10 shown in Fig. 1, which includes a mounting table 12 and components For example, can be used as a remote plasma apparatus for extracting plasma from the chamber 11 and supplying the plasma to another location.

PS: Processing space
S: substrate
10: Plasma processing device
11: chamber
12: Mounting table
13: ICP antenna
14: window member
28, 36: conductor
29: Condenser
30: Closed circuit
35, 39:
38: Dielectric
40: Plasma generating device

Claims (17)

A plasma processing apparatus comprising: a processing chamber for accommodating a substrate; a mounting table disposed inside the processing chamber for mounting the substrate thereon; and an inductively coupled antenna disposed outside the processing chamber so as to face the mounting table and connected to a high- In this case,
Wherein one wall portion of the treatment chamber facing the inductively coupled antenna is constituted by the one wall portion which does not electrically conduct directly with the other wall portion of the treatment chamber and the one wall portion between the mount table and the inductively coupled antenna A window member made of a conductive material,
A lead wire to which both ends are connected to the window member
, ≪ / RTI &
Wherein the window member and the lead wire form a closed circuit,
The lead having at least one capacitor,
Wherein the closed circuit is not present in a plane parallel to the window member, the plane on which the closed circuit is present crosses the window member,
An induction current flows in the window member
And the plasma processing apparatus.
The method according to claim 1,
The capacitance of the capacitor is adjusted such that the reactance of the closed circuit becomes negative
And the plasma processing apparatus.
The method according to claim 1,
And a connection position of the lead wire and the window member is changed according to distribution of the plasma in the treatment chamber
And the plasma processing apparatus.
4. The method according to any one of claims 1 to 3,
Wherein the window member is divided into a plurality of divided pieces, the lead is provided corresponding to at least one of the divided pieces, and both ends of the lead are connected to the divided piece provided with the corresponding lead
And the plasma processing apparatus.
4. The method according to any one of claims 1 to 3,
The window member is divided into a plurality of divided pieces,
Wherein one end of the lead is connected to one of the split pieces and the other end of the lead is connected to the other split piece and the one split piece and the other split piece are connected to each other by a lead wire different from the lead wire Being
And the plasma processing apparatus.
6. The method of claim 5,
Wherein the inductively coupled antenna is disposed opposite to the one split piece
And the plasma processing apparatus.
A plasma processing apparatus comprising: a processing chamber for accommodating a substrate; a mounting table disposed inside the processing chamber for mounting the substrate thereon; and an inductively coupled antenna disposed outside the processing chamber so as to face the mounting table and connected to a high- In this case,
Wherein one wall portion of the treatment chamber facing the inductively coupled antenna is constituted by the one wall portion which does not electrically conduct directly with the other wall portion of the treatment chamber and the one wall portion between the mount table and the inductively coupled antenna A window member made of a conductive material,
A lead wire to which both ends are connected to the window member
, ≪ / RTI &
Wherein the window member and the lead wire form a closed circuit,
The lead having at least one capacitor,
The window member is divided into a plurality of divided pieces,
One end of the lead is connected to one of the divided pieces, the other end of the lead is connected to the other divided piece,
The one split piece and the other split piece are separated from each other by a dielectric disposed therebetween and are not in direct contact with each other so as not to be electrically conducted to each other,
A part of the dielectric between the one split piece and the other split piece is thinly formed
And the plasma processing apparatus.
4. The method according to any one of claims 1 to 3,
The conductor being wound so as to form a passing surface through which a magnetic force line generated from the inductively coupled antenna passes
And the plasma processing apparatus.
4. The method according to any one of claims 1 to 3,
Wherein the capacitor is a capacitance variable capacitor and the capacitance of the capacitor is adjusted according to at least one of a density and a density distribution of the plasma in the treatment chamber
And the plasma processing apparatus.
A plasma generating apparatus for generating plasma in a decompression chamber,
An inductively coupled antenna disposed outside the decompression chamber and connected to a high frequency power source,
A window member made of a conductor and interposed between the inductively coupled antenna and the plasma in the decompression chamber;
A lead wire to which both ends are connected to the window member
, ≪ / RTI &
Wherein the window member and the lead wire form a closed circuit,
The lead having at least one capacitor,
Wherein the closed circuit is not present in a plane parallel to the window member, the plane on which the closed circuit is present crosses the window member,
An induction current flows in the window member
And a plasma generator.
11. The method of claim 10,
The capacitance of the capacitor is adjusted such that the reactance of the closed circuit becomes negative
And a plasma generator.
The method according to claim 10 or 11,
The window member is divided into a plurality of divided pieces,
One end of the lead is connected to one of the divided pieces, the other end of the lead is connected to the other divided piece, and the one divided piece and the other divided piece are connected to each other by a lead wire different from the lead wire
And a plasma generator.
An antenna structure comprising an inductively coupled antenna connected to a high frequency power source,
A window member made of a conductor and interposed between the inductively coupled antenna and the plasma generated by the inductively coupled antenna;
A lead wire to which both ends are connected to the window member
, ≪ / RTI &
Wherein the window member and the lead wire form a closed circuit,
The lead having at least one capacitor,
Wherein the closed circuit is not present in a plane parallel to the window member, the plane on which the closed circuit is present crosses the window member,
An induction current flows in the window member
.
14. The method of claim 13,
The capacitance of the capacitor is adjusted such that the reactance of the closed circuit becomes negative
.
The method according to claim 13 or 14,
The window member is divided into a plurality of divided pieces,
One end of the lead is connected to one of the divided pieces, the other end of the lead is connected to the other divided piece, and the one divided piece and the other divided piece are connected to each other by a lead wire different from the lead wire
.
A plasma generating method using an antenna structure comprising an inductively coupled antenna connected to a high frequency power source, a window member made of a conductor interposed between the inductively coupled antenna and the plasma, and a conductor, wherein the conductor has at least one capacitor As a result,
Both ends of the lead wire are connected to the window member to form a closed circuit,
The capacitance of the capacitor is adjusted so that the reactance of the closed circuit becomes negative,
Wherein the closed circuit is not present in a plane parallel to the window member, the plane on which the closed circuit is present crosses the window member,
An induction current flows in the window member
And a plasma generating step of generating plasma.
17. The method of claim 16,
Wherein the capacitor is a capacitance variable capacitor and the capacitance of the capacitor is adjusted according to at least one of a density and a density distribution of the plasma
And a plasma generating step of generating plasma.

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