CN104103485B - Inductance coupled plasma device - Google Patents
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- CN104103485B CN104103485B CN201310128505.1A CN201310128505A CN104103485B CN 104103485 B CN104103485 B CN 104103485B CN 201310128505 A CN201310128505 A CN 201310128505A CN 104103485 B CN104103485 B CN 104103485B
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Abstract
The present invention relates to a kind of inductance coupled plasma device, including reaction chamber, for be placed on wafer therein and carry out plasma treatment reaction；Drenching gas head, be located at reaction chamber top, it includes at least one air inlet, for being passed through reacting gas to reaction chamber；Least one set inductance-coupled coil, is close in reaction chamber and arranges, and is used for by the external radio-frequency power supply of adaptation to apply radio-frequency power to reaction chamber；And screening arrangement, it being close in inductance-coupled coil and arrange, in radio-frequency power is shielded from the first space, produces plasma to act on reacting gas, plasma is reacted with wafer by second space through free diffusing；Wherein, the first space, second space lay respectively in reaction chamber, in being distributed up and down and being interconnected.The invention enables the electron temperature in plasma substantially to reduce, thus significantly weaken physical etching reaction；And it is advantageously implemented being uniformly distributed of reaction chamber plasma.
Description
Technical field
The present invention relates to semiconductor manufacturing facility field, more particularly, it relates to a kind of inductive etc. from
Daughter device.
Background technology
Inductively coupled plasma (Inductively Coupled Plasma is called for short ICP) device is extensive
In the techniques such as semiconductor etching.Reacting gas, under the exciting of radio-frequency power, is ionized and generation etc.
Gas ions, wherein comprises electronics, ion, the atom of excitation state, molecule and free radical isoreactivity particle,
The surfacing of these active particles and the object that is etched reacts, thus realizes plasma etching work
Skill.Wherein, rf electric field is to act on reaction chamber by inductance-coupled coil and produce.Specifically,
The external such as frequency of inductance-coupled coil is the radio-frequency power supply of 13.56MHZ, is connected with in making inductance-coupled coil
Radio-frequency current, thus produce the magnetic field of change, the magnetic field of this change induces electric field again, so that reaction
The reacting gas of chamber interior is converted to plasma.
Inductance coupled plasma device of the prior art is as it is shown in figure 1, reaction chamber 10 top is provided with
Drenching gas head 11, it is passed through reacting gas, reaction chamber by multiple air inlets 110 to reaction chamber 10
Bottom is provided with electrostatic chuck 13, and it is placed with wafer 20 to be etched；Reaction chamber 10 outside wall portions is provided with
Inductance-coupled coil 12, its external radio-frequency power supply enters for applying radio-frequency power to whole reaction chamber 10
And produce rf electric field, under the effect of rf electric field, reaction gas is known from experience and is converted to plasma, but this
Kind of rf electric field is distributed in autoreaction chamber roof between bottom, thus plasma arrives wafer 20
Before be constantly under the excitation of rf electric field, electrons therein has higher temperature.
But, on the one hand, in some etching technics (such as etching polysilicon), especially need with
During chemically etching is main technique occasion, it is desirable to the electron temperature in plasma is relatively low, to avoid
High bombarding energy makes physical etching occupy leading position, and makes technical process be in uncontrollable state.
On the other hand, the magnetic distribution in reaction chamber is uneven, relatively big in centre density, and
Edge density is less, causes reaction chamber plasma to be also at the state of skewness, can be right
The homogeneity of wafer engraving brings adverse effect.
Therefore, according to the requirement of specific etching technics, in reaction chamber produce be evenly distributed, electronics temperature
Spend relatively low plasma, be the technical issues that need to address of the present invention.
Summary of the invention
It is an object of the invention to provide a kind of inductance coupled plasma device, it can be in reaction chamber
The plasma that generation is evenly distributed, electron temperature is relatively low.
For achieving the above object, technical scheme is as follows:
A kind of inductance coupled plasma device, including: reaction chamber, it is used for and is placed on crystalline substance therein
Sheet carries out plasma treatment reaction；Drenching gas head, be located at reaction chamber top, it includes at least one air inlet
Mouthful, for being passed through reacting gas to reaction chamber；Least one set inductance-coupled coil, is close in reaction chamber
Room is arranged, and is used for by the external radio-frequency power supply of adaptation to apply radio-frequency power to reaction chamber；And screen
Cover device, be close in inductance-coupled coil and arrange, to make in radio-frequency power is shielded from the first space
Produce plasma for reacting gas, plasma is entered with wafer by second space through free diffusing
Row reaction；Wherein, the first space, second space lay respectively in reaction chamber, in distribution phase up and down
Intercommunicated.
Preferably, drench gas head bottom surface and include that at least one lug boss, inductance-coupled coil and screening arrangement are buried underground
In lug boss, the first space is the dented space that lug boss surrounds, and second space is below the first space
Reaction chamber space.
Preferably, screening arrangement includes least one set and inductance-coupled coil metal transverse sheet one to one,
Being arranged at immediately below inductance-coupled coil, metal transverse sheet extends along inductance-coupled coil length direction.
Preferably, lug boss is two and separately positioned, the respectively first lug boss and the second lug boss,
Second lug boss is from peripheral cincture the first lug boss；Inductance-coupled coil includes that two groups are embedded in first respectively
Coil in lug boss and the second lug boss, respectively first coil and the second coil, screening arrangement includes
Two groups with inductance-coupled coil metal transverse sheet one to one and two groups and inductance-coupled coil one_to_one corresponding
Metal riser, the respectively first transverse sheet, the second transverse sheet, the first riser and the second riser, the first transverse sheet
It is embedded in the first lug boss with the first riser, for the radio-frequency power that first coil produces is shielded from the
Three spaces, the second transverse sheet and the second riser are embedded in the second lug boss, for produced by the second coil
Radio-frequency power is shielded from the 4th space；Wherein, the 3rd space is the dented space that the first lug boss surrounds,
4th space be that the second lug boss surrounds, do not include the dented space in the 3rd space, the 3rd space,
Four spaces connect with second space respectively.
Preferably, screening arrangement also includes a metal disk, metal disk and first, second riser contiguity,
And first, second coil is covered from top, metal disk is provided with at least one through hole to connect air inlet respectively
Mouthful.
The inductance coupled plasma device that the present invention provides, by arranging screening arrangement by rf electric field screen
Cover in reaction chamber the first space, and in second space, there is no the effect of rf electric field.Empty first
Between the plasma that produces arrive wafer surface through free diffusing by second space, and in second space
Plasma is known from experience through a cooling procedure so that the electron temperature in plasma substantially reduces, thus aobvious
Work weakens physical etching reaction.Additionally, this inductance coupled plasma device also can be by different coils
The rf electric field of the varying strength produced is shielded from different reaction chamber inner spaces respectively, such that it is able to
Regulation and control realize being uniformly distributed of reaction chamber plasma, are beneficial to reach the homogeneity of wafer engraving.
Accompanying drawing explanation
Fig. 1 illustrates the structural representation of inductance coupled plasma device in prior art；
Fig. 2 illustrates the structural representation of the inductance coupled plasma device of first embodiment of the invention；
Fig. 3 illustrates the structural representation of the inductance coupled plasma device of second embodiment of the invention；
Fig. 4 illustrates the structural representation of the inductance coupled plasma device of third embodiment of the invention.
Detailed description of the invention
Below in conjunction with the accompanying drawings, the detailed description of the invention of the present invention is described in further detail.
As in figure 2 it is shown, the inductance coupled plasma device that first embodiment of the invention provides includes: anti-
Answer chamber 10, drench gas head 11, inductance-coupled coil 12 and screening arrangement.Drench gas head 11 and be located at reaction chamber
Top, room 10, is additionally provided with electrostatic chuck 13 bottom reaction chamber, be used for fixing pending wafer 20；Drench
Gas head 11 includes multiple air inlet 110, for being passed through reacting gas to reaction chamber 10, drenches gas head
11 bottom surfaces have a continuous extension lug boss 111, and it can be distributed or multiple head and the tail phase twist
U-shaped distribution etc. even；Inductance-coupled coil 12 is by an external radio-frequency power supply of adaptation, to reaction chamber
10 apply RF source power, so that reacting gas is changed into plasma.
Inductance-coupled coil 12 and screening arrangement, be all layed in lug boss 111 internal, and in being distributed up and down.
The RF source power that inductance-coupled coil 12 produces is shielded from the first of reaction chamber top by screening arrangement
In space 101, reacting gas is ionized into plasma wherein, plasma reacted chamber 10 bottom
Second space 102 free diffusing to wafer 20 surface, so that wafer 20 is performed etching reaction.
First space 101 is the dented space between lug boss 111, or is surrounded by each lug boss 111
Dented space, second space 102 is the reaction chamber space below the first space 101.I.e. first is empty
Between, second space 101,102 present lower vertical distribution.
Specifically, screening arrangement is one group and inductance-coupled coil 12 metal transverse sheet 14 one to one.
It is layed in protruding inductance-coupled coil 12 within 111 to extend along with the bearing of trend of lug boss 111,
Similarly, metal transverse sheet 14 extends along the length direction of inductance-coupled coil 12, is i.e. layed in lug boss
The distribution twist as lug boss 111 of inductance-coupled coil 12 within 111, metal transverse sheet 14,
Or multiple end to end U-shaped is distributed in pouring gas head 11 lower surface, wherein, metal transverse sheet 14 is layed in
Immediately below inductance-coupled coil 12, the RF source power that inductance-coupled coil 12 applies is shielded from first
In space 101.
This inductance coupled plasma device produces plasma, plasma warp in the first space 101
Second space 102 free diffusing, to wafer 20 surface, is only distributed in the first space 101 because of rf electric field
In, plasma is the most accelerated or excite in second space 102, and can experience a cooling procedure, institute
With electronics therein, there is lower temperature, thus substantially weaken the physical etching reaction with wafer 20
Effect, makes chemically etching reaction occupy leading position, is beneficial to meet the requirement of specific etching technics.
Meanwhile, reaction chamber 10 plasma has situation pockety and occurs, and free diffusing exists
A mixed process is had so that second space 102 is equivalent to a pretreatment chamber time in second space 102,
Make plasma more uniformly be distributed wherein, thus be conducive to the homogeneity to wafer 20 etching.
As it is shown on figure 3, the inductance coupled plasma device that second embodiment of the invention provides includes: anti-
Answer chamber 10, drench gas head 121,122 and two pieces of metal transverse sheets 141 of 11, two groups of inductance-coupled coils,
142, two pieces of metal risers 151,152.Electrostatic chuck 13 and pending wafer it is provided with bottom reaction chamber
20.Drench gas head 11 bottom surface and there is a continuous extension lug boss 111.
Specifically, 121,122 and two pieces of metal transverse sheets 141,142 of two groups of inductance-coupled coils, two pieces
It is internal that metal riser 151,152 is all layed in lug boss 111；Inductance-coupled coil 121,122 along with
The bearing of trend of lug boss 111 and extend.Metal riser 151,152 is separately positioned, and respectively along inductance
Coupling coil 121,122 length direction extends, and metal riser 152 is arranged at the periphery of metal riser 151
Side.Metal transverse sheet 141,142 can be wholely set, it is possible to separately positioned, respectively along inductance-coupled coil
121,122 length directions extend.
Metal transverse sheet 141 and metal riser 151 are as a bulk shielding facility, by inductance-coupled coil 121
The RF source power produced is shielded from the 3rd space 1011 of reaction chamber.Metal transverse sheet 142 and metal
Riser 152, as another bulk shielding facility, is arranged at outside inductance-coupled coil 122, metal transverse sheet
141 and metal riser 151 formed screening arrangement be positioned at inside inductance-coupled coil 122, two shielding dress
Put one to work the RF source power that inductance-coupled coil 122 produces is shielded from the 4th of reaction chamber 10
In space 1010.
3rd space 1011 is surrounded by the lug boss 111 of metal transverse sheet 141 and metal riser 151 place
Dented space, the 4th space 1010 is metal transverse sheet 142 and the lug boss at metal riser 152 place
112 dented space surrounded, the three, the 4th spaces 1011,1010 all can be considered as the present invention first
The part in the first space 101 in embodiment, or group together both the three, the 4th spaces 1011,1010
Synthesize the first space 101；Second space 102 is that vertical distribution is in the three, the 4th spaces 1011,1010
The reaction chamber space of lower section.I.e. the three, the 4th spaces 1011,1010 are respectively positioned in reaction chamber 10
Portion, and all connecting with second space 102, the 4th space 1010 from peripheral around the 3rd space 1011,
Both are in inside and outside distribution.Wherein, lug boss 111 and the separable setting of lug boss 112.
The radio-frequency power that inductance-coupled coil 121 applies acts on the reacting gas in the 3rd space 1011 and produces
Raw plasma, it is anti-that the radio-frequency power that inductance-coupled coil 122 applies acts in the 4th space 1010
Answer gas also to produce plasma, these plasmas all by second space 102 free diffusing to wafer
The surface of 20, in second space 102, because of the effect without rf electric field, it is cold that plasma knows from experience experience one
But process, then wafer 20 is performed etching reaction so that the electronics in plasma has lower temperature,
Thus substantially weaken with the physical etching reaction of wafer 20, and make chemically etching reaction occupy leading ground
Specific technique occasion such as position, beneficially etching polysilicon etc..
Additionally, plasma produces in the three, the 4th spaces 1011,1010, have Density inhomogeneity
Situation occur, have a mixed process when free diffusing is in second space 102 so that second space
102 are equivalent to a pretreatment chamber, make plasma more uniformly be distributed wherein, thus the most right
The homogeneity of wafer 20 etching.
According to above-mentioned second embodiment, a Main Function of metal riser 151 is shielding inductive line
Electromagnetic interference mutual between circle 121 and inductance-coupled coil 122 so that the 3rd space 1011 and the 4th
Radio-frequency power in space 1010 shields mutually.
Further, inductance-coupled coil 121,122 can connect the radio frequency of same power by adaptation
Power supply, thus in the 3rd space 1010, space the 1011, the 4th, produce the RF source power of same intensity,
The radio-frequency power supply of different capacity can also be connected thus in the 3rd space, space the 1011, the 4th by adaptation
The RF source power of varying strength is produced in 1010.
Under preferable case, inductance-coupled coil 121,122 connects the radio-frequency power supply of different capacity, so that electric
Sense coupling coil 121 applies the radio-frequency power of the first intensity in the 3rd space 1011 and produces first wherein
The plasma of concentration, makes inductance-coupled coil 122 apply the radio frequency of the second intensity in the 4th space 1010
Power and produce the plasma of the second concentration wherein, the first intensity is different from the second intensity.
It will be appreciated by those skilled in the art that the physical arrangement of the distribution because of inductance-coupled coil and reaction chamber,
The usual skewness of rf electric field in reaction chamber, relatively big in centre density, and in edge
Density is less, causes reaction chamber plasma to be also at the state of skewness, can be to wafer engraving
Homogeneity bring adverse effect.Even if being provided with second space 102 for plasma by a mixing
Process promotes that plasma is uniformly distributed, and is also necessary that seeking other effective schemes optimizes further
Being uniformly distributed of gas ions.
The inductance coupled plasma device that second embodiment of the invention provides is with two groups of separately positioned inductance
Coupling coil 121,122 connects the radio-frequency power supply of varying strength respectively by adaptation, can be to reaction chamber
The different parts of room 10 applies different radio-frequency powers.By optionally in reaction chamber centre,
Such as the 3rd space 1011, applies more weak radio-frequency power, and in reaction chamber edge, such as
Four spaces 1010, apply relatively strong radio-frequency power, and the rf electric field in reaction chamber can be made to be in more
Equally distributed state, and then make plasma therein be uniformly distributed, final is the homogeneous of wafer engraving
Property brings extremely advantageous condition.
According to above-mentioned second embodiment of the present invention, the first intensity is less than the second intensity, and the first concentration may be slightly
Below or near in the second concentration.
Further, inductance-coupled coil 121,122 is respectively with two outputs of a power divider even
Connecing, this power divider input connects a common radio-frequency power supply by an adaptation again.This set
System architecture is simplified further.
Further, above-mentioned power divider includes a regulation unit, distributes to inductive for regulation
The radio-frequency power of coil 121,122.By this regulation unit, can be in real time to the radio frequency in reaction chamber
Electric Field Distribution is adjusted, and then plasma distribution is adjusted.
Under preferable case, power divider distributes to the radio-frequency power of inductance-coupled coil 121 less than its point
The radio-frequency power of dispensing inductance-coupled coil 122.
Further, the radio-frequency power of inductance-coupled coil 122 distributed to by power divider is that it is external
The 52%-65% of radio-frequency power supply general power.
Further, this radio-frequency power supply provides RF source power, and its power is 700W-10kW.
As shown in Figure 4, the inductance coupled plasma device that third embodiment of the invention provides includes: anti-
Answer chamber 10, drench gas head 121,122 and two pieces of metal transverse sheets 141 of 11, two groups of inductance-coupled coils,
142, two pieces of metal risers 151,152, and a metal disk 16.Electrostatic it is provided with bottom reaction chamber
Chuck 13 and pending wafer 20.Drench gas head 11 bottom surface and there are two continuous extension lug bosses 111,112,
It is internal that inductance-coupled coil 121 and metal transverse sheet 141, metal riser 151 are layed in lug boss 111,
And extend along with the bearing of trend of lug boss 111；Similarly, inductance-coupled coil 122 and metal are horizontal
It is internal that sheet 142, metal riser 152 are layed in lug boss 112, and along with the extension side of lug boss 112
To and extend.Metal disk 16 is flatly layed in pouring gas head 11, the position of non-lug boss 111.
3rd embodiment is the embodiment improved further of above-mentioned second embodiment, be different from first,
Second embodiment, metal disk 16 touches with two metal risers 151, and covers inductance coupling from top
Zygonema circle 121,122, metal disk 16 is provided with multiple through hole to connect pouring gas head 11 one to one
The air inlet of upper setting.
By arranging this metal disk 16, can further radio-frequency power be shielded from reaction chamber 10
3rd space 1011 and the 4th space 1010, prevents radio-frequency power from leaking out from reaction chamber 10 top,
Both it is beneficial to produce the plasma of high concentration in reaction chamber, improves again efficiency of energy utilization.
It should be understood that radio-frequency power is shielded from a certain sky in reaction chamber by the present invention or employing screening arrangement
Between so that it is free diffusing, to wafer surface, reduces electron temperature in plasma, is beneficial to specific
Technique occasion；Or use screening arrangement that the RF power strength of the different parts in reaction chamber is adjusted
Joint, so that plasma therein is more uniformly distributed.These invention thoughts should not be limited to screening arrangement
Structure or position, realize the inductance coupled plasma device of said function the most not with other screening arrangements
Depart from the thought of the present invention.
The above-described the preferred embodiments of the present invention that are only, described embodiment also is not used to limit the present invention
Scope of patent protection, the equivalent structure that the specification of the most every utilization present invention and accompanying drawing content are made
Change, in like manner should be included in protection scope of the present invention.
Claims (13)
1. an inductance coupled plasma device, including:
Reaction chamber, for be placed on wafer therein and carry out plasma treatment reaction；
Drench gas head, be located at described reaction chamber top, it includes at least one air inlet, for described instead
Chamber is answered to be passed through reacting gas；
Least one set inductance-coupled coil, is close in described reaction chamber and arranges, outside by adaptation
Connect radio-frequency power supply to apply radio-frequency power to described reaction chamber；And
Screening arrangement, is close in described inductance-coupled coil and arranges, for being shielded from by described radio-frequency power
Producing plasma to act on described reacting gas in first space, described plasma is through free expansion
Dissipate and reacted with described wafer by second space；Wherein, described first space, second space are respectively
It is positioned at described reaction chamber, in being distributed up and down and being interconnected；
Wherein, described pouring gas head bottom surface includes at least one lug boss, described inductance-coupled coil and shielding dress
Putting and be embedded in described lug boss, described first space is the dented space that described lug boss surrounds, described
Second space is the reaction chamber space below described first space；Described screening arrangement includes least one set
With described inductance-coupled coil metal transverse sheet one to one, it is arranged at immediately below described inductance-coupled coil,
Described metal transverse sheet extends along described inductance-coupled coil length direction.
2. inductance coupled plasma device as claimed in claim 1, described lug boss be two and
Separately positioned, the respectively first lug boss and the second lug boss, described second lug boss is from peripheral cincture institute
State the first lug boss；Described inductance-coupled coil includes that two groups are embedded in described first lug boss and respectively
Coil in two lug bosses, respectively first coil and the second coil, described screening arrangement include two groups with
Described inductance-coupled coil metal transverse sheet one to one and two groups and described inductance-coupled coil one a pair
The metal riser answered, the respectively first transverse sheet, the second transverse sheet, the first riser and the second riser, described
One transverse sheet and the first riser are embedded in described first lug boss, for by penetrating that described first coil produces
Frequently power mask is in the 3rd space, and described second transverse sheet and the second riser are embedded in described second lug boss,
For the radio-frequency power that described second coil produces is shielded from the 4th space；Wherein, described 3rd space
The dented space surrounded for described first lug boss, described 4th space be that described second lug boss surrounds,
Not including the dented space in described 3rd space, described 3rd space, the 4th space are respectively with described second
Space connects.
3. inductance coupled plasma device as claimed in claim 2, it is characterised in that described the
One transverse sheet, the second transverse sheet are respectively arranged at immediately below described first coil, the second coil, and respectively along institute
State first coil, the second loop length direction extends.
4. inductance coupled plasma device as claimed in claim 2, it is characterised in that described the
One riser, the second riser extend along described first coil, the second loop length direction respectively, and described first
Riser from peripheral side around a described first coil at least week with the radio-frequency power that described first coil is produced
Be shielded from described 3rd space, described second riser from peripheral side around a described second coil at least week with
Together with described first riser, the radio-frequency power that described second coil produces is shielded from described 4th space.
5. inductance coupled plasma device as claimed in claim 2, it is characterised in that described screen
Cover device and also include that a metal disk, described metal disk touch with described first, second riser, and from
Top covers described first, second coil, and described metal disk is provided with at least one through hole to connect respectively
Described air inlet.
6. the inductance coupled plasma device as according to any one of claim 1 to 5, its feature
Being, described radio-frequency power is RF source power.
7. the inductance coupled plasma device as according to any one of claim 4 to 5, its feature
Being, described first coil applies the radio-frequency power of the first intensity in described 3rd space and to produce first dense
The plasma of degree, described second coil applies the radio-frequency power of the second intensity in described 4th space and produces
The plasma of raw second concentration, described first intensity is different from described second intensity.
8. inductance coupled plasma device as claimed in claim 7, it is characterised in that described the
One intensity is less than described second intensity.
9. the inductance coupled plasma device as according to any one of claim 4 to 5, its feature
Being, described first coil and the second coil are connected with two outputs of a power divider respectively, institute
State power divider input and connect described adaptation, the external described radio-frequency power supply of described adaptation.
10. inductance coupled plasma device as claimed in claim 9, it is characterised in that described merit
Rate distributor includes a regulation unit, distributes to described first coil and the radio frequency of the second coil for regulation
Power.
11. inductance coupled plasma devices as claimed in claim 10, it is characterised in that described
Power divider is distributed to the radio-frequency power of described first coil and is distributed to penetrating of described second coil less than it
Frequently power.
12. inductance coupled plasma devices as claimed in claim 11, it is characterised in that described
Power divider is distributed to the radio-frequency power of described second coil and is provided power for described radio-frequency power supply
52%-65%.
13. inductance coupled plasma devices as claimed in claim 12, it is characterised in that described
Radio-frequency power supply provides RF source power, and its power is 700W-10kW.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310128505.1A CN104103485B (en) | 2013-04-15 | 2013-04-15 | Inductance coupled plasma device |
| TW103113472A TW201445632A (en) | 2013-04-15 | 2014-04-11 | Inductive coupling plasma device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310128505.1A CN104103485B (en) | 2013-04-15 | 2013-04-15 | Inductance coupled plasma device |
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| CN104103485A CN104103485A (en) | 2014-10-15 |
| CN104103485B true CN104103485B (en) | 2016-09-07 |
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| CN108573891B (en) * | 2017-03-07 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Plasma processing apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1311707A (en) * | 1998-08-03 | 2001-09-05 | 东京电子株式会社 | ESRF coolant degassing process |
| CN1554106A (en) * | 2001-07-13 | 2004-12-08 | Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing | |
| CN1822328A (en) * | 2005-02-18 | 2006-08-23 | 东京毅力科创株式会社 | Vertical batch processing apparatus |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100541867B1 (en) * | 2005-08-22 | 2006-01-11 | (주)케이.씨.텍 | Manufacturing method of electrode for atmospheric pressure plasma and electrode structure and atmospheric pressure plasma apparatus using it |
| US20080023146A1 (en) * | 2006-07-26 | 2008-01-31 | Advanced Energy Industries, Inc. | Inductively coupled plasma system with internal coil |
| CN101136279B (en) * | 2006-08-28 | 2010-05-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Jigger coupling coil and jigger coupling plasma device |
| JP5479867B2 (en) * | 2009-01-14 | 2014-04-23 | 東京エレクトロン株式会社 | Inductively coupled plasma processing equipment |
| US8222822B2 (en) * | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
-
2013
- 2013-04-15 CN CN201310128505.1A patent/CN104103485B/en active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1311707A (en) * | 1998-08-03 | 2001-09-05 | 东京电子株式会社 | ESRF coolant degassing process |
| CN1554106A (en) * | 2001-07-13 | 2004-12-08 | Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing | |
| CN1822328A (en) * | 2005-02-18 | 2006-08-23 | 东京毅力科创株式会社 | Vertical batch processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI514471B (en) | 2015-12-21 |
| TW201445632A (en) | 2014-12-01 |
| CN104103485A (en) | 2014-10-15 |
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