CN104342621B - Magnetic field adjusting apparatus and plasma processing equipment - Google Patents
Magnetic field adjusting apparatus and plasma processing equipment Download PDFInfo
- Publication number
- CN104342621B CN104342621B CN201310316327.5A CN201310316327A CN104342621B CN 104342621 B CN104342621 B CN 104342621B CN 201310316327 A CN201310316327 A CN 201310316327A CN 104342621 B CN104342621 B CN 104342621B
- Authority
- CN
- China
- Prior art keywords
- magnetic field
- reaction chamber
- adjusting device
- ring body
- field adjusting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Abstract
The present invention provides a magnetic field adjusting apparatus and plasma processing equipment. The magnetic field adjusting apparatus makes plasmas in a reaction chamber be uniformly distributed through regulation of distribution of magnetic fields produced in the reaction chamber, and comprises a plurality of ring bodies capable of producing magnetic fields, wherein each ring body surrounds the outer side of the side wall of the reaction chamber, the number of the ring bodied along the horizontal direction of the reaction chamber is at least two, and/or, the number of the ring bodies along the vertical direction of the reaction chamber is at least two. With the magnetic field adjusting apparatus provided by the invention, the distribution of the plasmas in the reaction chamber can be flexibly controlled so as to improve the uniformity of the plasma distribution, such that the process uniformity can be improved.
Description
Technical field
The invention belongs to semiconductor processing technology field, and in particular to a kind of magnetic field adjusting device and plasma process set
It is standby.
Background technology
In the preparation technology of semiconductor integrated circuit, plasma processing device is widely used in entering workpiece to be machined
The technique of row sputtering, etching or plated film etc..
Fig. 1 is a kind of structure diagram of existing plasma processing device.Fig. 1 is referred to, the plasma process sets
It is standby to include reaction chamber 10, the bottom of reaction cavity 10 is provided with the chuck 11 for carrying workpiece to be machined S, and anti-
Target 14 is provided with the roof for answering chamber 10, and is provided with and unidirectional current above target 14 in the outside of reaction chamber 10
The magnetron 19 of the electrical connection of source 14, excites to form plasma 16 to the process gas that will be close to target 14, plasma 16
The surface of bombardment target 14 and the metal particle deposition that makes from 14 surface of target to sputter on the surface of workpiece to be machined S, so as to
Realize the surface deposition film in workpiece to be machined S；Additionally, chuck 11 and the high frequency electric source being arranged on outside reaction chamber 10
12a and low-frequency power 12b electrical connections, will be close to around chuck 11 when high frequency electric source 12a and low-frequency power 12b is turned on
Process gas excites to form plasma 13, and the plasma 13 bombards the surface of workpiece to be machined S, to realize processed work
The thin film that need not be deposited on the surface of part S is etched away.In actual applications, it is often higher in the frequency of high frequency electric source 12a
When plasma 13 can produce standing wave effect, this causes plasma 13 low in the distributed density of the marginal area of reaction chamber 10
In the distributed density of central area, so as to cause process uniformity to reduce.
For this purpose, respective regions of the people generally by magnetic field adjusting device in reaction chamber produce magnetic field, so that reaction
The plasma distribution of within the chamber is uniform.A kind of existing magnetic field adjusting device, the magnetic field adjusting device include coil 17 and with
Electrical connection DC source 18, wherein, coil 17 is circumferentially positioned at the side-wall outer side of reaction chamber 10, and relative with chuck 11
At the position answered；DC source 18 for providing electric current to coil 17, with the edge in the reaction chamber 10 corresponding to chuck 11
Region forms magnetic field, and the magnetic field can increase distribution density of the plasma in the marginal area, such that it is able to make in chuck 11
The plasma distribution of heart district domain and marginal area is uniform.
But, although above-mentioned magnetic field adjusting device can make the plasma distribution of 11 central area of chuck and marginal area
Uniformly, but, as which only has a coil 17, the magnetic field produced by the coil 17 is only capable of adjusting chuck 11 whole marginal zone
The plasma distribution in domain, and the plasma distribution of each position of 11 marginal area of chuck cannot be adjusted, thus above-mentioned magnetic
The motility of field control device control plasma distribution is poor, so as to meet the work higher to process uniformity requirements
Skill.Additionally, coil 17 easily generates heat when the electric current being passed through in which is excessive, so as to give the regulating effect of above-mentioned magnetic field adjusting device
Produce harmful effect.
The content of the invention
Present invention seek to address that technical problem present in prior art, there is provided a kind of magnetic field adjusting device and plasma
Body process equipment, which can neatly control distribution of the plasma in reaction chamber, such that it is able to improve plasma point
The uniformity of cloth, and then process uniformity can be improved.
The invention provides a kind of magnetic field adjusting device, which is made by adjusting the Distribution of Magnetic Field produced in reaction chamber
Plasma distribution in reaction chamber is uniform, and the magnetic field adjusting device includes multiple ring bodies for producing magnetic field, each ring
Body is circumferentially positioned at the side-wall outer side of the reaction chamber；Also, the plurality of ring body is in the horizontal direction of reaction chamber
Quantity is at least two, and/or, the quantity on the vertical direction of reaction chamber is at least two.
Wherein, each described ring body includes multiple magnets, and the plurality of magnet is set along the circumferentially-spaced of the reaction chamber
Put.
Preferably, the multiple described magnet in each described ring body is uniformly distributed along the circumference of the reaction chamber.
Wherein, the magnet is Magnet.
Wherein, each described ring body also includes the annular back plate of the side-wall outer side for being looped around the reaction chamber, and edge
The annular back plate has been provided at circumferentially spaced multiple fixed parts, and each described fixed part is used for fixing the magnet, so that described
Magnet is fixed between the upper strata annular back plate and lower floor's annular back plate.
Wherein, the annular back plate is made using permeability magnetic material.
Wherein, each described ring body includes an at least circle coil, and the coil encircling is outside the side wall of the reaction chamber
Side；And the magnetic field adjusting device also includes the DC source electrically connected with the coil, and the DC source is for institute
State coil with electric current.
Wherein, the magnetic field adjusting device also includes being looped around the protective cover of the plurality of ring body periphery, the protective cover
Made using diamagnetic material, to shield the magnetic field produced by the plurality of ring body interference to external world.
The present invention also provides a kind of plasma processing device, including reaction chamber and magnetic field adjusting device, the magnetic field
Adjusting means makes the plasma distribution in reaction chamber uniform by adjusting the Distribution of Magnetic Field produced in reaction chamber, institute
State the above-mentioned magnetic field adjusting device that magnetic field adjusting device is provided using the present invention.
Wherein, bogey and the radio-frequency power supply being electrically connected, the carrying dress is provided with the reaction chamber
Put for carrying workpiece to be machined, the radio-frequency power supply for loading radio-frequency power to the bogey, with the carrying
Plasma is formed around device；The position of the magnetic field adjusting device is corresponding with the position of the bogey, to logical
The plasma for overregulating the Distribution of Magnetic Field produced around the bogey and making to be formed around the bogey point
Cloth is uniform.
Wherein, the magnetic field adjusting device is anti-less than described corresponding to the distance on the vertical direction of the reaction chamber
Answer 1/3 of the distance on chamber vertical direction.
The present invention has following beneficial effects：
The magnetic field adjusting device that the present invention is provided, which produces magnetic by being looped around the multiple of side-wall outer side of reaction chamber
The ring body of field, can form magnetic field in the respective regions of reaction chamber, so as to be distributed in reaction chamber central area and marginal zone
The plasma in domain tends to uniform.And, quantity of the above-mentioned multiple ring bodies in the horizontal direction of reaction chamber is at least two,
And/or, the quantity on the vertical direction of reaction chamber is at least two, and by the multiple ring bodies of change in reaction chamber
The distribution in the magnetic field of formation, can adjust the strong of the magnetic field that formed in each position of reaction chamber marginal area by each ring body
Degree and direction, this can neatly control distribution of the plasma in reaction chamber compared with prior art, such that it is able to etc.
The uniformity of gas ions distribution, and then process uniformity can be improved.
The plasma processing device that the present invention is provided, which adopts the magnetic field adjusting device of present invention offer, can improve
The uniformity of plasma distribution, such that it is able to improve process uniformity, and then can improve processing quality.
Description of the drawings
Fig. 1 is a kind of structure diagram of existing plasma processing device；
The structure diagram of the magnetic field adjusting device that Fig. 2 is provided for first embodiment of the invention；
Top views of the Fig. 3 for magnetic field adjusting device；
Fig. 4 is two and vertically goes up the relative part-structure schematic diagram for answering annular back plate of adjacent ring body；
The structure diagram of another kind of magnetic field adjusting device that Fig. 5 is provided for first embodiment of the invention；And
The structure diagram of the plasma processing device that Fig. 6 is provided for first embodiment of the invention.
Specific embodiment
For making those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings the present invention is carried
For magnetic field adjusting device and plasma processing device be described in detail.
The structure diagram of the magnetic field adjusting device that Fig. 2 is provided for first embodiment of the invention.Fig. 3 is magnetic field adjusting device
Top view.Fig. 2 and Fig. 3 is seen also, the magnetic field adjusting device is by adjusting the Distribution of Magnetic Field produced in reaction chamber 20
And making plasma distribution in reaction chamber 20 uniform, magnetic field adjusting device includes multiple ring bodies for producing magnetic field, each
Ring body is circumferentially positioned at the side-wall outer side of reaction chamber 20, can form magnetic field in the respective regions of reaction chamber 20, also, many
Quantity of the individual ring body in the horizontal direction of reaction chamber is at least two, and/or, the number on the vertical direction of reaction chamber
Measure as at least two, in the present embodiment, as shown in figure 3, magnetic field adjusting device includes four ring bodies（1,2,3,4）, four rings
Body（1,2,3,4）Quantity in the horizontal direction of reaction chamber is two, and the quantity on the vertical direction of reaction chamber is
Two, each ring body includes multiple magnets 21, and multiple magnets 21 are provided at circumferentially spaced along reaction chamber 20, as shown in figure 3, its
In, each magnet 21 is Magnet, and as Magnet is not easy heating in technical process, this causes to cool down Magnet
Process, thus process costs can be reduced, such that it is able to increase economic efficiency.
It is exemplified below by changing the distribution in the magnetic field that multiple ring bodies are formed in reaction chamber to adjust by each
The method of the intensity and direction in the magnetic field that ring body is formed in each position of reaction chamber marginal area：Set magnetic in each ring body
The magnetic pole of ferrum immobilizes, i.e. the direction in the magnetic field that each ring body is formed in each position of 20 marginal area of reaction chamber is solid
It is fixed, for example, set the two neighboring ring body for going up in the horizontal direction（For example, ring body 1 and ring body 3, or, ring body 2 and ring body 4）'s
Magnetic pole is conversely, and the two neighboring ring body that vertically goes up（For example, ring body 1 and ring body 2, or, ring body 3 and ring body 4）
Magnetic pole it is identical, therefore, in this case, by change the magnet 21 in each ring body quantity and position adjusting each
The intensity in the magnetic field that ring body is formed in each position of 20 marginal area of reaction chamber.Specifically, increase magnet 21 quantity with
And the position of magnet 21 is moved near the position of reaction chamber 20, each ring body can be strengthened in 20 marginal zone of reaction chamber
The intensity in the magnetic field that each position in domain is formed；Reduce the quantity of magnet 21 and the position of magnet 21 is moved to away from reaction
The position of chamber 20, can weaken the intensity in the magnetic field that each ring body is formed in each position of 20 marginal area of reaction chamber.
Easy to understand, said method is a kind of embodiment that the present invention provides magnetic field adjusting device, in actual applications, it is also possible to adopt
Other any-modes are used, it is numerous to list herein.
In actual applications, the magnetic pole that can not set the magnet 21 in each ring body immobilizes, in this case,
The Distribution of Magnetic Field that the ring body is formed can be changed by changing magnetic pole, quantity and the position of the magnet 21 in each ring body, this
Plasma distribution reaction chamber in can be neatly controlled further.Specifically, change any one in each ring body
The magnetic pole of individual magnet 21, thus it is possible to vary each position of the marginal area corresponding with the magnet is formed in reaction chamber 20
The direction in magnetic field, due to by change the magnet 21 in each ring body quantity and position come change ring body formation magnetic field point
The concrete mode of cloth there has been detailed description in the above-mentioned methods, will not be described here.
Preferably, the multiple magnets 21 in each ring body are uniformly distributed along the circumference of reaction chamber 20, this and multiple magnetic
Body 21 is compared along the circumferentially distributed uneven of reaction chamber 20, can produce relatively uniform magnetic field in reaction chamber, thus
The efficiency for adjusting Distribution of Magnetic Field in reaction chamber 20 can be improved.
In the present embodiment, each ring body also includes the employing permeability magnetic material system of the side-wall outer side for being looped around reaction chamber 20
Into annular back plate, also, annular back plate includes upper strata annular back plate 25a and lower floor's annular back plate 25b, in upper strata annular back plate
Lower surface and lower floor's annular back plate upper surface on relative position, and be provided at circumferentially spaced multiple fixed parts along which
26, each fixed part 26 is used for fixing magnet so that magnet be fixed on upper strata annular back plate 25a and lower floor's annular back plate 25b it
Between.Also, fixed part 26 is fixed the mode of magnet and is specially：Fixed part 26 is convex portion, and the two ends of magnet are to match with the convex portion
The recess of set, makes convex portion be located in recess, to fix the magnet.In actual applications, fixed part can also adopt its other party
Formula fixes magnet, numerous to list herein.In the present embodiment, two annular back plates as shown in Figure 4 constitute loop configuration, and
It is circumferentially positioned at the side-wall outer side of reaction chamber 20, it is possible to achieve each ring body is fixed on into the side-wall outer side of reaction chamber 20.
In actual applications, will can interfix in multiple annular back plate in the vertical directions or horizontal direction, to by it is multiple
Adjacent ring body on vertical direction or in horizontal direction is used as a side-wall outer side for being integrally attached to reaction chamber 20.
Additionally, magnetic field adjusting device also includes the protective cover 27 for being looped around multiple ring body peripheries, protective cover 27 is using diamagnetic
Material is made, and to shield the magnetic field produced by multiple ring bodies interference to external world, thus can avoid magnetic field to external world its
His part produces unnecessary impact and even damages, such that it is able to improve the stability of technique.It is easy to understand, as shown in figure 4, protecting
Shield 27 is held within the outside of the annular back plate of outermost ring body in multiple ring bodies.
It should be noted that in the present embodiment, each ring body includes multiple being provided at circumferentially spaced along reaction chamber 20
Magnet 21, but, the invention is not limited in this, in actual applications, each ring body includes an at least circle coil, and magnetic
Field control device also includes the DC source electrically connected with the coil, as shown in figure 5, four ring bodies（1,2,3,4）Including therewith
One-to-one four coils（1 ', 2 ', 3 ', 4 '）And the DC source electrically connected with the coil（DC1, DC2, DC3, DC4）, line
Ring is wound on the side-wall outer side of reaction chamber 20, DC source for coil with electric current, with the corresponding of reaction chamber 20
Region forms magnetic field；And change the ring body corresponding with the coil by changing the size of current in each coil and direction
The distribution in the magnetic field of generation, specifically, the size for increasing electric current in coil can strengthen what ring body corresponding with the coil was produced
The intensity in magnetic field, such that it is able to strengthen the intensity in the magnetic field that the ring body is formed in each position of 20 marginal area of reaction chamber；
The size for reducing electric current in coil can weaken the intensity in the magnetic field that ring body corresponding with the coil is produced, such that it is able to weaken this
The intensity in the magnetic field that ring body is formed in each position of 20 marginal area of reaction chamber；The sense of current changed in coil can be with
Change the direction in the magnetic field that ring body corresponding with the coil is produced, such that it is able to change the ring body in 20 marginal area of reaction chamber
Each position at formed magnetic field direction.
In sum, the magnetic field adjusting device that the present embodiment is provided, its side-wall outer side by being looped around reaction chamber 20
Multiple ring bodies for producing magnetic field, can reaction chamber respective regions formed magnetic field, so as to be distributed in reaction chamber 20
The plasma of central area and marginal area tends to uniform.Also, formed in reaction chamber 20 by changing multiple ring bodies
Magnetic field distribution, can adjust the magnetic field formed in each position of reaction chamber marginal area by each ring body intensity and
Direction, this can neatly control distribution of the plasma in reaction chamber, compared with prior art such that it is able to plasma
The uniformity of body distribution, and then process uniformity can be improved.
The structure of the plasma processing device provided for first embodiment of the invention as another technical scheme, Fig. 6
Sketch.Refer to Fig. 6, the plasma processing device that the present invention is provided, which includes reaction chamber 20 and magnetic field adjusting device 30,
Magnetic field adjusting device 30 for made by adjusting the Distribution of Magnetic Field produced in reaction chamber 20 grade in reaction chamber 20 from
Daughter is evenly distributed, and the above-mentioned magnetic field adjusting device that magnetic field adjusting device 30 is provided using the present embodiment.
In the present embodiment, bogey 22 and the radio-frequency power supply being electrically connected are provided with reaction chamber 20, are held
Carry and put 22 bottoms for being arranged on reaction chamber 20, for carrying workpiece to be machined S, bogey 22 includes electrostatic chuck, its
Workpiece to be machined is fixed by the way of Electrostatic Absorption；Radio-frequency power supply for bogey 22 load radio-frequency power, to hold
Carry and put 22 surroundings formation plasma, wherein, radio-frequency power supply includes low frequency source 23 and high frequency source 24, the frequency model of low frequency source 23
400K～13.56MHz is trapped among, the frequency range of high frequency source 24 is in 27M～100MHz, it is preferable that the frequency of low frequency source 23 is
2MHz, the frequency of high frequency source 24 is 60MHz.In actual applications, electrostatic chuck can also be replaced using mechanical chuck, using machine
The mode that tool is fixed fixes workpiece to be machined.
Also, the position of magnetic field adjusting device 30 is corresponding with the position of bogey 22, to by adjusting in carrying
30 surrounding of device produce Distribution of Magnetic Field and make around bogey 30 formed plasma distribution it is uniform.Preferably, magnetic
Field control device 30 is corresponding to the distance on the vertical direction of reaction chamber 20 less than 20 vertical direction distance of reaction chamber
1/3, this not only can reduce the setting quantity of 30 ring body of magnetic field adjusting device, such that it is able to reduce input cost；And can be with
Other regions of magnetic field adjusting device 30 in reaction chamber 20 are avoided to produce magnetic field, so as to other portions in reaction chamber 20
Part produces impact.
In addition, in the present embodiment, be provided with target 40 on the roof of reaction chamber 20, target 40 be arranged on reaction
DC source 41 outside chamber 20 is electrically connected, and excites to form plasma to the process gas that will be close to target 40, wait from
The surface of daughter bombardment target 14 and the metal particle deposition that makes from 14 surface of target to sputter on the surface of workpiece to be machined S,
So as to realize the surface deposition film in workpiece to be machined S.
It should be noted that in the plasma processing device provided using the present embodiment to workpiece to be machined deposition film
Technical process in, the distribution in the magnetic field produced in reaction chamber 20 is adjusted by magnetic field adjusting device 30 so that by from target
40 surface of material is sputtered the diverse location of marginal area of the charged metal particle for getting off in reaction chamber 20 and is evenly distributed, from
And the uniformity of film thickness can be improved.
The plasma processing device that the present embodiment is provided, which passes through the above-mentioned flux control dress provided using the present embodiment
Put, which can improve the uniformity of plasma distribution, such that it is able to improve the uniformity of technique, and then technique matter can be improved
Amount.
It is understood that the embodiment of above principle being intended to be merely illustrative of the present and the exemplary enforcement for adopting
Mode, but the invention is not limited in this.For those skilled in the art, in the original without departing from the present invention
In the case of reason and essence, various modifications and improvement can be made, these modifications and improvement are also considered as protection scope of the present invention.
Claims (9)
1. a kind of magnetic field adjusting device, its made by adjusting the Distribution of Magnetic Field produced in reaction chamber in reaction chamber etc.
Gas ions are evenly distributed, it is characterised in that the magnetic field adjusting device includes multiple ring bodies for producing magnetic field, each ring body ring
Around the side-wall outer side for being arranged on the reaction chamber, each described ring body includes multiple magnets, and the plurality of magnet is along described anti-
Answer being provided at circumferentially spaced for chamber；Also, quantity of the plurality of ring body in the horizontal direction of reaction chamber is at least two,
And/or, the quantity on the vertical direction of reaction chamber is at least two, by changing the magnetic of the magnet in each described ring body
Pole, quantity and position are changing the Distribution of Magnetic Field that the ring body is formed.
2. magnetic field adjusting device according to claim 1, it is characterised in that the multiple described magnetic in each described ring body
Body is uniformly distributed along the circumference of the reaction chamber.
3. magnetic field adjusting device according to claim 1, it is characterised in that the magnet is Magnet.
4. magnetic field adjusting device according to claim 1, it is characterised in that each described ring body also includes being looped around described
The annular back plate of the side-wall outer side of reaction chamber, and
Multiple fixed parts are provided at circumferentially spaced along the annular back plate, each described fixed part is used for fixing the magnet, with
The magnet is made to be fixed between upper strata annular back plate and lower floor's annular back plate.
5. magnetic field adjusting device according to claim 4, it is characterised in that the annular back plate adopts permeability magnetic material system
Into.
6. magnetic field adjusting device according to claim 1, it is characterised in that the magnetic field adjusting device also includes being looped around
The protective cover of the plurality of ring body periphery, the protective cover are made using diamagnetic material, are produced by the plurality of ring body to shield
The interference to external world of raw magnetic field.
7. a kind of plasma processing device, including reaction chamber and magnetic field adjusting device, the magnetic field adjusting device is by adjusting
The Distribution of Magnetic Field that produces in reaction chamber of section and make the plasma distribution in reaction chamber uniform, it is characterised in that it is described
Magnetic field adjusting device is using the magnetic field adjusting device described in claim 1-6 any one.
8. plasma processing device according to claim 7, it is characterised in that be provided with the reaction chamber and hold
The radio-frequency power supply put and be electrically connected is carried, the bogey is used for carrying workpiece to be machined, and the radio-frequency power supply is used for
Radio-frequency power is loaded to the bogey, plasma is formed around the bogey；
The position of the magnetic field adjusting device is corresponding with the position of the bogey, to by adjusting in the carrying dress
The plasma distribution put the Distribution of Magnetic Field for around producing and make to be formed around the bogey is uniform.
9. plasma processing device according to claim 8, it is characterised in that the magnetic field adjusting device corresponds to institute
The distance on the vertical direction of reaction chamber is stated less than 1/3 of the distance on the reaction chamber vertical direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310316327.5A CN104342621B (en) | 2013-07-25 | 2013-07-25 | Magnetic field adjusting apparatus and plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310316327.5A CN104342621B (en) | 2013-07-25 | 2013-07-25 | Magnetic field adjusting apparatus and plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104342621A CN104342621A (en) | 2015-02-11 |
| CN104342621B true CN104342621B (en) | 2017-03-22 |
Family
ID=52499064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310316327.5A Active CN104342621B (en) | 2013-07-25 | 2013-07-25 | Magnetic field adjusting apparatus and plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104342621B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109913830B (en) * | 2019-04-17 | 2021-08-06 | 深圳天成机器有限公司 | Multifunctional vacuum coating machine |
| CN113808898B (en) * | 2020-06-16 | 2023-12-29 | 中微半导体设备(上海)股份有限公司 | Plasma corrosion resistant part, reaction device and composite coating forming method |
| TWI766707B (en) * | 2021-05-28 | 2022-06-01 | 天虹科技股份有限公司 | Magnetic apparatus and thin film deposition equipment for adjusting magnetic field distribution |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3573185A (en) * | 1968-12-16 | 1971-03-30 | Us Army | Anodic sputtering |
| US4865709A (en) * | 1987-06-16 | 1989-09-12 | Hitachi, Ltd. | Magnetron sputter apparatus and method for forming films by using the same apparatus |
| CN101280420A (en) * | 2008-05-28 | 2008-10-08 | 东北大学 | Magnetron sputtering target having magnetic field enhancing and adjusting functions |
| CN201158702Y (en) * | 2008-01-11 | 2008-12-03 | 中国科学院金属研究所 | Dynamic magnetic controlled arc source device for improving electric arc ion plating deposition technique |
| CN102396052A (en) * | 2009-02-06 | 2012-03-28 | 佳能安内华股份有限公司 | Plasma processing apparatus, plasma processing method, and method of manufacturing chip provided with processed substrate |
-
2013
- 2013-07-25 CN CN201310316327.5A patent/CN104342621B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3573185A (en) * | 1968-12-16 | 1971-03-30 | Us Army | Anodic sputtering |
| US4865709A (en) * | 1987-06-16 | 1989-09-12 | Hitachi, Ltd. | Magnetron sputter apparatus and method for forming films by using the same apparatus |
| CN201158702Y (en) * | 2008-01-11 | 2008-12-03 | 中国科学院金属研究所 | Dynamic magnetic controlled arc source device for improving electric arc ion plating deposition technique |
| CN101280420A (en) * | 2008-05-28 | 2008-10-08 | 东北大学 | Magnetron sputtering target having magnetic field enhancing and adjusting functions |
| CN102396052A (en) * | 2009-02-06 | 2012-03-28 | 佳能安内华股份有限公司 | Plasma processing apparatus, plasma processing method, and method of manufacturing chip provided with processed substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104342621A (en) | 2015-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102915902B (en) | A kind of plasma processing apparatus of capacitance coupling type and substrate processing method thereof | |
| US8773020B2 (en) | Apparatus for forming a magnetic field and methods of use thereof | |
| CN104928635B (en) | Magnetron sputtering chamber and magnetron sputtering apparatus | |
| US9437399B2 (en) | Plasma equipment | |
| CN104217914B (en) | Plasma processing apparatus | |
| US10115566B2 (en) | Method and apparatus for controlling a magnetic field in a plasma chamber | |
| CN104342621B (en) | Magnetic field adjusting apparatus and plasma processing equipment | |
| US20130062311A1 (en) | Inductively coupled plasma processing apparatus and method for processing substrate with the same | |
| CN103374705A (en) | Magnetron sputtering device | |
| KR20140019577A (en) | Apparatus of depositing thin film and method of depositing thin film using the same | |
| KR101629214B1 (en) | Plasma processing apparatus for shaping plasma with controlling magnetic field | |
| TWI521559B (en) | Magnetic field distribution adjusting device for plasma processor and its adjusting method | |
| KR101753620B1 (en) | Controlling azimuthal uniformity of etch process in plasma processing chamber | |
| CN103219215A (en) | Novel coherent multiple side electromagnets | |
| CN104651786B (en) | A kind of adjusting method of the magnetic field intensity of magnetron | |
| CN106548967A (en) | Bogey and semiconductor processing equipment | |
| CN105931940A (en) | Inductively coupled plasma device | |
| CN103249241B (en) | Novel multi coil target design | |
| TW201534183A (en) | Inductive-coupling-type plasma processing apparatus and self-inductive coil thereof and method thereof for manufacturing semiconductor substrate | |
| KR100844150B1 (en) | Plasma processing apparatus and method | |
| JP2016018727A (en) | Plasma processing apparatus | |
| KR101429852B1 (en) | An etching appartus for a semiconductor | |
| TW201724166A (en) | Plasma processing device and plasma processing method including a reaction chamber, a substrate carrier, a plurality of inductively coupled coils, a radio frequency power source, a power distributor, and a controller | |
| KR102247030B1 (en) | Induction heating apparatus | |
| KR101104093B1 (en) | Internal antenna and plasma generation apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP03 | Change of name, title or address |