CN104103485A - Inductively coupled plasma device - Google Patents
Inductively coupled plasma device Download PDFInfo
- Publication number
- CN104103485A CN104103485A CN201310128505.1A CN201310128505A CN104103485A CN 104103485 A CN104103485 A CN 104103485A CN 201310128505 A CN201310128505 A CN 201310128505A CN 104103485 A CN104103485 A CN 104103485A
- Authority
- CN
- China
- Prior art keywords
- space
- coil
- inductance
- radio
- frequency power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Plasma Technology (AREA)
Abstract
The present invention relates to an inductively coupled plasma device. The inductively coupled plasma device comprises a reaction chamber used for carrying out plasma processing reaction with a wafer placed in the reaction chamber; a gas spraying head arranged above the reaction chamber, and comprising at least one air inlet used for introducing reaction gases into the reaction chamber; at least one set of inductive coupling coils arranged nearby the reaction chamber and used for applying radio frequency power to the reaction chamber via an adapter external radio frequency power supply; and a shielding device arranged nearby the inductive coupling coils and used for shielding the radio frequency power in a first space to act on the reaction gases to generate the plasma, wherein the plasma passes a second space in a free diffusion manner to react with the wafer, and wherein the first space and the second space are located in the reaction chamber separately, distributed up and down and are communicated with each other. According to the present invention, the electronic temperature in the plasma is reduced obviously, thereby weakening the physical etching reaction substantially, and facilitating the uniform distribution of the plasma in the reaction chamber.
Description
Technical field
The present invention relates to semiconductor manufacturing facility field, more particularly, relate to a kind of inductance coupled plasma device.
Background technology
Inductively coupled plasma (Inductively Coupled Plasma is called for short ICP) device is widely used in the techniques such as semiconductor etching.Reacting gas is under the exciting of radio-frequency power, be ionized and produce plasma, the atom, molecule and the free radical isoreactivity particle that wherein comprise electronics, ion, excitation state, the surfacing of these active particles and the object that is etched reacts, thereby realizes plasma etch process.Wherein, rf electric field is by inductance-coupled coil, to act on reaction chamber to produce.Particularly, the radio-frequency power supply that the external for example frequency of inductance-coupled coil is 13.56MHZ, makes to be connected with in inductance-coupled coil radio-frequency current, thus the magnetic field changing, the magnetic field of this variation induces electric field again, thereby makes the reacting gas of reaction chamber inside be converted to plasma.
Inductance coupled plasma device of the prior art as shown in Figure 1, reaction chamber 10 tops are provided with drenches gas head 11, it passes into reacting gas by a plurality of air inlets 110 to reaction chamber 10, and reaction chamber bottom is provided with electrostatic chuck 13, is placed with wafer 20 to be etched on it; Reaction chamber 10 outside wall portions are provided with inductance-coupled coil 12, its external radio-frequency power supply is for applying radio-frequency power and then producing rf electric field to whole reaction chamber 10, under the effect of rf electric field, reaction gas cognition is converted to plasma, but this rf electric field is distributed in autoreaction chamber roof between bottom, thereby plasma is before arriving wafer 20 always under the excitation in rf electric field, electrons wherein has higher temperature.
Yet, on the one hand, for example, in some etching technics (etching polysilicon), especially need to take chemistry etching in main technique occasion, electron temperature in expectation plasma is lower, to avoid too high bombarding energy to make physical property etching dominate, and make technical process in uncontrollable state.
On the other hand, the electromagnetic field skewness in reaction chamber, in centre, density is larger, and less in edge density, causes the also state in skewness of reaction chamber applying plasma, can bring adverse effect to the homogeneity of wafer engraving.
Therefore,, according to the requirement of specific etching technics, the plasma that generation is evenly distributed in reaction chamber, electron temperature is lower, is the technical issues that need to address of the present invention.
Summary of the invention
The object of the present invention is to provide a kind of inductance coupled plasma device, the plasma that it can produce and be evenly distributed in reaction chamber, electron temperature is lower.
For achieving the above object, technical scheme of the present invention is as follows:
An inductance coupled plasma device, comprising: reaction chamber, for be placed on wafer wherein and carry out plasma treatment and react; Drench gas head, be located at reaction chamber top, it comprises at least one air inlet, for passing into reacting gas to reaction chamber; At least one group of inductance-coupled coil, is close in reaction chamber setting, for by the external radio-frequency power supply of adaptation to apply radio-frequency power to reaction chamber; And screening arrangement, be close in inductance-coupled coil setting, for radio-frequency power being shielded from the first space, to act on reacting gas, produce plasma, plasma reacts with wafer by second space through free diffusing; Wherein, the first space, second space lay respectively in reaction chamber, are and distribute up and down and be interconnected.
Preferably, drench gas head bottom surface and comprise at least one lug boss, inductance-coupled coil and screening arrangement are embedded in lug boss, and the first space is the dented space that lug boss surrounds, and second space is the reaction chamber space of the first below, space.
Preferably, screening arrangement comprise at least one group with inductance-coupled coil metal transverse sheet one to one, be arranged under inductance-coupled coil, metal transverse sheet extends along inductance-coupled coil length direction.
Preferably, lug boss is two and separated setting, is respectively the first lug boss and the second lug boss, the second lug boss from periphery around the first lug boss, inductance-coupled coil comprises two groups of coils that are embedded in respectively in the first lug boss and the second lug boss, be respectively the first coil and the second coil, screening arrangement comprise two groups with inductance-coupled coil metal transverse sheet and two groups and inductance-coupled coil metal riser one to one one to one, be respectively the first transverse sheet, the second transverse sheet, the first riser and the second riser, the first transverse sheet and the first riser are embedded in the first lug boss, for the radio-frequency power that the first coil is produced, be shielded from the 3rd space, the second transverse sheet and the second riser are embedded in the second lug boss, for the radio-frequency power that the second coil is produced, be shielded from the 4th space, wherein, the 3rd space is the dented space that the first lug boss surrounds, and the 4th space is dented space that the second lug boss surrounds, that do not comprise the 3rd space, and the 3rd space, the 4th space are communicated with second space respectively.
Preferably, screening arrangement also comprises a metal disk, and metal disk and first, second riser connect airtight, and cover first, second coil from top, and metal disk is provided with at least one through hole to connect respectively air inlet.
Inductance coupled plasma device provided by the invention, is shielded from rf electric field in reaction chamber the first space by screening arrangement is set, and in second space, there is no the effect of rf electric field.The plasma producing in the first space arrives wafer surface through free diffusing by second space, and know from experience through a cooling procedure at second space ionic medium, electron temperature in plasma is obviously reduced, thereby significantly weakened physical property etching reaction.In addition, the rf electric field of the varying strength that this inductance coupled plasma device also can produce different coils is shielded from respectively different reaction chamber inner spaces, thereby can regulate and control being uniformly distributed of realization response chamber applying plasma, be beneficial to the homogeneity of reaching wafer engraving.
Accompanying drawing explanation
Fig. 1 illustrates the structural representation of inductance coupled plasma device in prior art;
Fig. 2 illustrates the structural representation of the inductance coupled plasma device of first embodiment of the invention;
Fig. 3 illustrates the structural representation of the inductance coupled plasma device of second embodiment of the invention;
Fig. 4 illustrates the structural representation of the inductance coupled plasma device of third embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
As shown in Figure 2, the inductance coupled plasma device that first embodiment of the invention provides comprises: reaction chamber 10, pouring gas head 11, inductance-coupled coil 12 and screening arrangement.Drench gas head 11 and be located at reaction chamber 10 tops, reaction chamber bottom is also provided with electrostatic chuck 13, for fixing pending wafer 20; Drench gas head 11 and include a plurality of air inlets 110, for passing into reacting gas to reaction chamber 10, drench gas head 11 bottom surfaces and have a continuous extension lug boss 111, it can distribute or a plurality of end to end U-shaped distributions etc. twist; Inductance-coupled coil 12, by the external radio-frequency power supply of an adaptation, applies radio frequency source power to reaction chamber 10, so that reacting gas changes plasma into.
Inductance-coupled coil 12 and screening arrangement, be all layed in lug boss 111 inside, and be distribution up and down.The radio frequency source power mask that screening arrangement produces inductance-coupled coil 12 is in first space 101 on reaction chamber top, reacting gas is ionized into plasma therein, plasma through second space 102 free diffusings of reaction chamber 10 bottoms to wafer 20 surfaces, so that wafer 20 is carried out to etching reaction.
The first space 101 is the dented space between lug boss 111, or the dented space surrounding for each lug boss 111, and second space 102 is the reaction chamber space of 101 belows, the first space.The first space, second space 101,102 are presented lower vertical distribution.
Particularly, screening arrangement be one group with inductance-coupled coil 12 metal transverse sheet 14 one to one.The inductance-coupled coil 12 that is layed in protruding 111 inside extends along with the bearing of trend of lug boss 111, similarly, metal transverse sheet 14 extends along the length direction of inductance-coupled coil 12, the distribution twist the same as lug boss 111 of inductance-coupled coil 12, metal transverse sheet 14 or a plurality of end to end U-shaped that are layed in lug boss 111 inside are distributed in pouring gas head 11 lower surfaces, wherein, metal transverse sheet 14 is layed under inductance-coupled coil 12, and the radio frequency source power mask that inductance-coupled coil 12 is applied is in the first space 101.
This inductance coupled plasma device produces plasma in the first space 101, plasma through second space 102 free diffusings to wafer 20 surfaces, because rf electric field is only distributed in the first space 101, plasma in second space 102 without accelerating or exciting, and can experience a cooling procedure, so electronics wherein has lower temperature, thereby obviously weakened the effect with the physical property etching reaction of wafer 20, make chemistry etching reaction dominate, be beneficial to the requirement that meets specific etching technics.
Simultaneously, reaction chamber 10 applying plasmas have situation pockety and occur, free diffusing has a mixed process in second space 102 time, make second space 102 be equivalent to a preliminary treatment chamber, make therein plasma distribute more equably, thereby be conducive to the homogeneity to wafer 20 etchings.
As shown in Figure 3, the inductance coupled plasma device that second embodiment of the invention provides comprises: reaction chamber 10, drench gas head 11, two groups of 141,142, two metal risers 151,152 of 121,122 and two metal transverse sheets of inductance-coupled coil.Reaction chamber bottom is provided with electrostatic chuck 13 and pending wafer 20.Drench gas head 11 bottom surfaces and there is a continuous extension lug boss 111.
Particularly, 141,142, two metal risers 151,152 of 121,122 and two metal transverse sheets of two groups of inductance-coupled coils are all layed in lug boss 111 inside; Inductance-coupled coil 121,122 bearing of trends along with lug boss 111 and extending.Metal riser 151,152 is separated to be arranged, and along inductance-coupled coil 121,122 length directions, extends respectively, and metal riser 152 is arranged at the peripheral side of metal riser 151.Metal transverse sheet 141,142 can be wholely set, and also separable setting is extended along inductance-coupled coil 121,122 length directions respectively.
Metal transverse sheet 141 and metal riser 151 are as a bulk shielding facility, and the radio frequency source power mask that inductance-coupled coil 121 is produced is in the 3rd space 1011 of reaction chamber.Metal transverse sheet 142 and metal riser 152 are as another bulk shielding facility, be arranged at inductance-coupled coil 122 outsides, the screening arrangement that metal transverse sheet 141 and metal riser 151 form is positioned at inductance-coupled coil 122 inner sides, and two screening arrangements one work the radio frequency source power mask of inductance-coupled coil 122 generations in the 4th space 1010 of reaction chamber 10.
The dented space that the lug boss 111 that the 3rd space 1011 is metal transverse sheet 141 and metal riser 151 places surrounds, the dented space that the lug boss 112 that the 4th space 1010 is metal transverse sheet 142 and metal riser 152 places surrounds, three, the 4th space 1011,1010 all can be considered as the part in the first space 101 in first embodiment of the invention, or the 3rd, the 4th space 1011,1010 both be combined into together the first space 101; Second space 102 is that vertical distribution is in the reaction chamber space of 1011,1010 belows, the 3rd, the 4th space.The the 3rd, the 4th space 1011,1010 is all positioned at reaction chamber 10 inside, and is all communicated with second space 102, and the 4th space 1010 is from periphery around the 3rd space 1011, and both are inside and outside distribution.Wherein, lug boss 111 and the separable setting of lug boss 112.
The reacting gas that the radio-frequency power that inductance-coupled coil 121 applies acts in the 3rd space 1011 produces plasma, the reacting gas that the radio-frequency power that inductance-coupled coil 122 applies acts in the 4th space 1010 also produces plasma, these plasmas are the surface to wafer 20 by second space 102 free diffusings all, in second space 102, because of the effect without rf electric field, plasma is known from experience experience one cooling procedure, again wafer 20 is carried out to etching reaction, make the electronics in plasma there is lower temperature, thereby obviously weaken with the physical property etching reaction of wafer 20, and make chemistry etching reaction dominate, be conducive to the specific technique occasions such as etching polysilicon.
In addition, plasma produces in the 3rd, the 4th space 1011,1010, the situation that has Density inhomogeneity occurs, free diffusing has a mixed process in second space 102 time, make second space 102 be equivalent to a preliminary treatment chamber, make therein plasma distribute more equably, thereby be conducive to the homogeneity to wafer 20 etchings.
According to above-mentioned the second embodiment, a Main Function of metal riser 151 is mutual electromagnetic interference between shielding inductance-coupled coil 121 and inductance-coupled coil 122, and the radio-frequency power in the 3rd space 1011 and the 4th space 1010 is shielded mutually.
Further, inductance-coupled coil 121,122 can connect by adaptation the radio-frequency power supply of same power, thereby in the 3rd space 1011, the 4th space 1010, produce the radio frequency source power of same intensity, thereby the radio-frequency power supply that also can connect different capacity by adaptation produces the radio frequency source power of varying strength in the 3rd space 1011, the 4th space 1010.
Under preferable case, inductance-coupled coil 121,122 connects the radio-frequency power supply of different capacity, so that applying the radio-frequency power of the first intensity in the 3rd space 1011, inductance-coupled coil 121 produces therein the plasma of the first concentration, make inductance-coupled coil 122 apply the radio-frequency power of the second intensity in the 4th space 1010 and produce therein the plasma of the second concentration, the first intensity is different from the second intensity.
Those skilled in the art understand, because of the distribution of inductance-coupled coil and the physical structure of reaction chamber, the common skewness of rf electric field in reaction chamber, in centre, density is larger, and it is less in edge density, cause the also state in skewness of reaction chamber applying plasma, can bring adverse effect to the homogeneity of wafer engraving.Even if be provided with second space 102, for plasma, by a mixed process, promote plasma to be uniformly distributed, be also necessary to seek other effective schemes and further optimize being uniformly distributed of plasma.
The inductance coupled plasma device that second embodiment of the invention provides connects respectively the radio-frequency power supply of varying strength with two groups of inductance-coupled coils 121,122 of separation setting by adaptation, can apply different radio-frequency powers to the different parts of reaction chamber 10.By optionally in reaction chamber centre, the 3rd space 1011 for example, apply weak radio-frequency power, and in reaction chamber edge, for example the 4th space 1010, applies relatively strong radio-frequency power, can make rf electric field in reaction chamber in more equally distributed state, and then plasma is wherein uniformly distributed, finally for the homogeneity of wafer engraving is brought very favourable condition.
Above-mentioned the second embodiment according to the present invention, the first intensity is less than the second intensity, the first concentration may be slightly lower than or close to the second concentration.
Further, inductance-coupled coil 121,122 is connected with two outputs of a power divider respectively, and this power divider input connects a common radio-frequency power supply by an adaptation again.This set is further simplified system configuration.
Further, above-mentioned power divider comprises a regulon, for regulating and distributing the radio-frequency power to inductance-coupled coil 121,122.By this regulon, can in real time the rf electric field in reaction chamber be distributed and be regulated, and then plasma distribution regulates.
Under preferable case, the radio-frequency power that power divider is distributed to inductance-coupled coil 121 is less than the radio-frequency power that it distributes to inductance-coupled coil 122.
Further, power divider is distributed to the 52%-65% that the radio-frequency power of inductance-coupled coil 122 is its external radio-frequency power supply gross power.
Further, this radio-frequency power supply provides radio frequency source power, and its power is 700W-10kW.
As shown in Figure 4, the inductance coupled plasma device that third embodiment of the invention provides comprises: reaction chamber 10, drench gas head 11, two groups of 121,122 and two metal transverse sheets 141,142 of inductance-coupled coil, two metal risers 151,152, and a metal disk 16.Reaction chamber bottom is provided with electrostatic chuck 13 and pending wafer 20.Drench gas head 11 bottom surfaces and have two continuous extension lug bosses 111,112, inductance-coupled coil 121 and metal transverse sheet 141, metal riser 151 are layed in lug boss 111 inside, and extend along with the bearing of trend of lug boss 111; Similarly, inductance-coupled coil 122 and metal transverse sheet 142, metal riser 152 are layed in lug boss 112 inside, and extend along with the bearing of trend of lug boss 112.Metal disk 16 is flatly layed in pouring gas head 11, the position of non-lug boss 111.
The 3rd embodiment is the further improved execution mode of above-mentioned the second embodiment, what be different from first, second embodiment is, metal disk 16 and two metal risers 151 connect airtight, and from top, covering inductance-coupled coil 121,122, metal disk 16 is provided with a plurality of through holes and drenches to connect one to one the air inlet arranging on gas head 11.
By this metal disk 16 is set, can further radio-frequency power be shielded to the 3rd space 1011 and the 4th space 1010 in reaction chamber 10, prevent that radio-frequency power from leaking out from reaction chamber 10 tops, both be beneficial to the plasma that produces high concentration in reaction chamber, improved again efficiency of energy utilization.
Should be appreciated that, the present invention or employing screening arrangement are shielded from a certain space in reaction chamber by radio-frequency power, make its free diffusing to wafer surface, have reduced electron temperature in plasma, are beneficial to specific technique occasion; Or adopt screening arrangement to regulate the RF power strength of the different parts in reaction chamber, so that plasma wherein distributes more equably.These invention thoughts should not be limited to structure or the position of screening arrangement, and the inductance coupled plasma device of realizing said function with other screening arrangements does not all depart from thought of the present invention.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (15)
1. an inductance coupled plasma device, comprising:
Reaction chamber, for be placed on wafer wherein and carry out plasma treatment and react;
Drench gas head, be located at described reaction chamber top, it comprises at least one air inlet, for passing into reacting gas to described reaction chamber;
At least one group of inductance-coupled coil, is close in described reaction chamber setting, for by the external radio-frequency power supply of adaptation to apply radio-frequency power to described reaction chamber; And
Screening arrangement, is close in described inductance-coupled coil setting, and for described radio-frequency power is shielded from the first space and produces plasma to act on described reacting gas, described plasma reacts with described wafer by second space through free diffusing; Wherein, described the first space, second space lay respectively in described reaction chamber, are and distribute up and down and be interconnected.
2. inductance coupled plasma device as claimed in claim 1, it is characterized in that, described pouring gas head bottom surface comprises at least one lug boss, described inductance-coupled coil and screening arrangement are embedded in described lug boss, described the first space is the dented space that described lug boss surrounds, and described second space is the reaction chamber space of described the first below, space.
3. inductance coupled plasma device as claimed in claim 2, it is characterized in that, described screening arrangement comprise at least one group with described inductance-coupled coil metal transverse sheet one to one, be arranged under described inductance-coupled coil, described metal transverse sheet extends along described inductance-coupled coil length direction.
4. inductance coupled plasma device as claimed in claim 2, described lug boss is two and separated setting, is respectively the first lug boss and the second lug boss, described the second lug boss from periphery around described the first lug boss, described inductance-coupled coil comprises two groups of coils that are embedded in respectively in described the first lug boss and the second lug boss, be respectively the first coil and the second coil, described screening arrangement comprise two groups with described inductance-coupled coil metal transverse sheet and two groups and described inductance-coupled coil metal riser one to one one to one, be respectively the first transverse sheet, the second transverse sheet, the first riser and the second riser, described the first transverse sheet and the first riser are embedded in described the first lug boss, for the radio-frequency power that described the first coil is produced, be shielded from the 3rd space, described the second transverse sheet and the second riser are embedded in described the second lug boss, for the radio-frequency power that described the second coil is produced, be shielded from the 4th space, wherein, described the 3rd space is the dented space that described the first lug boss surrounds, and described the 4th space is described the second lug boss dented space that surround, that do not comprise described the 3rd space, and described the 3rd space, the 4th space are communicated with described second space respectively.
5. inductance coupled plasma device as claimed in claim 4, is characterized in that, described the first transverse sheet, the second transverse sheet are arranged at respectively under described the first coil, the second coil, and along described the first coil, the second loop length direction, extends respectively.
6. inductance coupled plasma device as claimed in claim 4, it is characterized in that, described the first riser, the second riser extend along described the first coil, the second loop length direction respectively, described the first riser is shielded from described three space around described first at least one week of coil with the radio-frequency power that described the first coil is produced from peripheral side, and the radio-frequency power that described the second riser produces described the second coil around the first riser described at least one Zhou Yiyu of described the second coil together from peripheral side is shielded from described the 4th space.
7. inductance coupled plasma device as claimed in claim 4, it is characterized in that, described screening arrangement also comprises a metal disk, described metal disk and described first, second riser connect airtight, and from top, covering described first, second coil, described metal disk is provided with at least one through hole to connect respectively described air inlet.
8. the inductance coupled plasma device as described in any one in claim 1 to 7, is characterized in that, described radio-frequency power is radio frequency source power.
9. the inductance coupled plasma device as described in any one in claim 4 to 7, it is characterized in that, described the first coil applies the radio-frequency power of the first intensity in described the 3rd space and produces the plasma of the first concentration, described the second coil applies the radio-frequency power of the second intensity in described the 4th space and produces the plasma of the second concentration, and described the first intensity is different from described the second intensity.
10. inductance coupled plasma device as claimed in claim 9, is characterized in that, described the first intensity is lower than described the second intensity.
11. inductance coupled plasma devices as described in any one in claim 4 to 7, it is characterized in that, described the first coil is connected with two outputs of a power divider respectively with the second coil, described power divider input connects described adaptation, the external described radio-frequency power supply of described adaptation.
12. inductance coupled plasma devices as claimed in claim 11, is characterized in that, described power divider comprises a regulon, for regulating and distributing the radio-frequency power to described the first coil and the second coil.
13. inductance coupled plasma devices as claimed in claim 12, is characterized in that, the radio-frequency power that described power divider is distributed to described the first coil is less than the radio-frequency power that it distributes to described the second coil.
14. inductance coupled plasma devices as claimed in claim 13, is characterized in that, the radio-frequency power that described power divider is distributed to described the second coil provides the 52%-65% of power for described radio-frequency power supply.
15. inductance coupled plasma devices as claimed in claim 14, is characterized in that, described radio-frequency power supply provides radio frequency source power, and its power is 700W-10kW.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310128505.1A CN104103485B (en) | 2013-04-15 | 2013-04-15 | Inductance coupled plasma device |
| TW103113472A TW201445632A (en) | 2013-04-15 | 2014-04-11 | Inductive coupling plasma device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310128505.1A CN104103485B (en) | 2013-04-15 | 2013-04-15 | Inductance coupled plasma device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104103485A true CN104103485A (en) | 2014-10-15 |
| CN104103485B CN104103485B (en) | 2016-09-07 |
Family
ID=51671528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310128505.1A Active CN104103485B (en) | 2013-04-15 | 2013-04-15 | Inductance coupled plasma device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104103485B (en) |
| TW (1) | TW201445632A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108573891A (en) * | 2017-03-07 | 2018-09-25 | 北京北方华创微电子装备有限公司 | Admission gear and reaction chamber |
| CN111769061A (en) * | 2020-07-27 | 2020-10-13 | 上海邦芯半导体设备有限公司 | Inductive coupling reactor and working method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1311707A (en) * | 1998-08-03 | 2001-09-05 | 东京电子株式会社 | ESRF coolant degassing process |
| CN1554106A (en) * | 2001-07-13 | 2004-12-08 | Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing | |
| CN1822328A (en) * | 2005-02-18 | 2006-08-23 | 东京毅力科创株式会社 | Vertical batch processing apparatus |
| US20070182327A1 (en) * | 2005-08-22 | 2007-08-09 | K.C. Tech Co., Ltd. | Manufacturing method of electrode for atmospheric pressure plasma, electrode structure, and atmospheric pressure plasma apparatus using the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080023146A1 (en) * | 2006-07-26 | 2008-01-31 | Advanced Energy Industries, Inc. | Inductively coupled plasma system with internal coil |
| CN101136279B (en) * | 2006-08-28 | 2010-05-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Jigger coupling coil and jigger coupling plasma device |
| JP5479867B2 (en) * | 2009-01-14 | 2014-04-23 | 東京エレクトロン株式会社 | Inductively coupled plasma processing equipment |
| US8222822B2 (en) * | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
-
2013
- 2013-04-15 CN CN201310128505.1A patent/CN104103485B/en active Active
-
2014
- 2014-04-11 TW TW103113472A patent/TW201445632A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1311707A (en) * | 1998-08-03 | 2001-09-05 | 东京电子株式会社 | ESRF coolant degassing process |
| CN1554106A (en) * | 2001-07-13 | 2004-12-08 | Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing | |
| CN1822328A (en) * | 2005-02-18 | 2006-08-23 | 东京毅力科创株式会社 | Vertical batch processing apparatus |
| US20070182327A1 (en) * | 2005-08-22 | 2007-08-09 | K.C. Tech Co., Ltd. | Manufacturing method of electrode for atmospheric pressure plasma, electrode structure, and atmospheric pressure plasma apparatus using the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108573891A (en) * | 2017-03-07 | 2018-09-25 | 北京北方华创微电子装备有限公司 | Admission gear and reaction chamber |
| CN108573891B (en) * | 2017-03-07 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Plasma processing apparatus |
| CN111769061A (en) * | 2020-07-27 | 2020-10-13 | 上海邦芯半导体设备有限公司 | Inductive coupling reactor and working method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104103485B (en) | 2016-09-07 |
| TWI514471B (en) | 2015-12-21 |
| TW201445632A (en) | 2014-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI643236B (en) | Plasma processing device | |
| TWI681073B (en) | Plasma treatment device | |
| US8773020B2 (en) | Apparatus for forming a magnetic field and methods of use thereof | |
| US7994724B2 (en) | Inductive plasma applicator | |
| KR101496841B1 (en) | Compound plasma reactor | |
| KR101095602B1 (en) | Processing device and generating device for plasma | |
| KR101092511B1 (en) | Processing device and generating device for plasma | |
| JP5934030B2 (en) | Plasma processing apparatus, plasma generation apparatus, antenna structure, and plasma generation method | |
| TWI641044B (en) | Reaction chamber and semiconductor processing device | |
| JP3881307B2 (en) | Plasma processing equipment | |
| CN104103485A (en) | Inductively coupled plasma device | |
| CN106134294A (en) | The apparatus for processing plasma that magnetic field controls to make plasma shape can be passed through | |
| CN105931940B (en) | A kind of inductance coupled plasma device | |
| KR100751535B1 (en) | Plasma generator having ferrite core with multi-frequency induction coil and plasma process apparatus having the same | |
| KR20150040757A (en) | Plasma cvd apparatus | |
| JP6580830B2 (en) | Plasma processing equipment | |
| CN107295738A (en) | A kind of plasma processing apparatus | |
| JP6431303B2 (en) | Etching apparatus and etching method | |
| KR101109063B1 (en) | Plasma processing apparatus | |
| CN212485279U (en) | Inductive coupling reactor | |
| KR20190137062A (en) | Plasma processing device | |
| CN212322965U (en) | Inductive coupling reactor | |
| JP7330391B2 (en) | Plasma processing apparatus and plasma processing method | |
| CN212322964U (en) | Inductive coupling reactor | |
| CN212322966U (en) | Inductive coupling reactor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CP01 | Change in the name or title of a patent holder |