CN111769061A - Inductive coupling reactor and working method thereof - Google Patents
Inductive coupling reactor and working method thereof Download PDFInfo
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- CN111769061A CN111769061A CN202010733752.4A CN202010733752A CN111769061A CN 111769061 A CN111769061 A CN 111769061A CN 202010733752 A CN202010733752 A CN 202010733752A CN 111769061 A CN111769061 A CN 111769061A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/327—Arrangements for generating the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
An inductive coupling reactor and a working method thereof, the inductive coupling reactor comprises: a reaction chamber body; the inductive coupling radio frequency unit is positioned above the reaction cavity main body; the inductively coupled radio frequency unit includes: a shield case; the reaction chamber medium pipe is positioned in the shielding cover, the outer side wall of the reaction chamber medium pipe is inclined, the top cross section of the reaction chamber medium pipe is smaller than the bottom cross section of the reaction chamber medium pipe, and the inner side wall of the reaction chamber medium pipe is also provided with a partition piece which divides the inner area of the reaction chamber medium pipe into a first reaction area and second reaction areas positioned on two sides of the first reaction area; and the radio frequency antenna is positioned in the shielding cover and distributed on the side part of the reaction chamber medium tube. The inductively coupled reactor can enhance the control of plasma distribution.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an inductive coupling reactor and a working method thereof.
Background
In semiconductor manufacturing, a plurality of processes are involved, each of which is performed by a certain apparatus and process. Among them, the etching process is an important process in semiconductor manufacturing, such as a plasma etching process. The plasma etching process is to utilize reaction gas to generate plasma after obtaining energy, wherein the plasma comprises charged particles such as ions and electrons, neutral atoms, molecules and free radicals with high chemical activity, and an etching object is etched through physical and chemical reactions.
However, during plasma etching, the etching conditions at the edge of the wafer and the etching conditions at the center of the wafer are greatly different, and the etching conditions include: plasma density distribution, radio frequency electric field, temperature distribution, etc. Where plasma density distribution is a very important etching condition. For example, the plasma density distributed over the center region of the wafer is typically greater than the plasma density distributed over the edge region of the wafer, and such a distribution is difficult to adjust.
Therefore, it is desirable to provide an inductively coupled reactor with controllable adjustment of the plasma distribution to meet the needs.
Disclosure of Invention
The invention aims to provide an inductive coupling reactor and a working method thereof, which can enhance the control capability on plasma distribution.
In order to solve the above technical problems, the present invention provides an inductive coupling reactor, comprising: a reaction chamber body; the inductive coupling radio frequency unit is positioned above the reaction cavity main body; the inductively coupled radio frequency unit includes: a shield case; the reaction chamber medium pipe is positioned in the shielding cover, the outer side wall of the reaction chamber medium pipe is inclined, the top cross section of the reaction chamber medium pipe is smaller than the bottom cross section of the reaction chamber medium pipe, and the inner side wall of the reaction chamber medium pipe is also provided with a partition piece which divides the inner area of the reaction chamber medium pipe into a first reaction area and second reaction areas positioned on two sides of the first reaction area; and the radio frequency antenna is positioned in the shielding cover and distributed on the side part of the reaction chamber medium tube.
Optionally, the method further includes: a first gas inlet channel penetrating through a reaction chamber medium pipe at the top of the first reaction area; a second gas inlet channel penetrating through a reaction chamber medium pipe at the side part of the second reaction area; and the air inlet of the first reaction area and the air inlet of the second reaction area are respectively and independently adjustable.
Optionally, the spacer has an opening therein extending through a thickness of the spacer, the opening being sized to: the minimum distance that the charged particles of the plasma of the first reaction region move when leaving the opening is greater than the mean free path of the charged particles of the first reaction region, and the minimum distance that the charged particles of the plasma of the second reaction region move when leaving the opening is greater than the mean free path of the charged particles of the second reaction region; the openings are adapted for exchange between gases in the first reaction zone and gases inside the second reaction zone.
Optionally, the rf antenna includes an upper rf antenna and a lower rf antenna that are separated from each other, the upper rf antenna is located at a side portion of the first reaction area, the lower rf antenna is located at a side portion of the second reaction area, and the rf power fed by the upper rf antenna and the rf power fed by the lower rf antenna are adjustable respectively.
Optionally, the lower rf antenna has a first antenna terminal and a second antenna terminal, and the upper rf antenna has a third antenna terminal and a fourth antenna terminal; the first antenna terminal is suitable for feeding in a first radio frequency, the third antenna terminal is suitable for feeding in a second radio frequency, and the first radio frequency and the second radio frequency are adjustable in size.
Optionally, the inductively coupled radio frequency unit further includes: a radio frequency source; one end of the radio frequency matcher is connected with the radio frequency source; one end of the first power divider is connected with the other end of the radio frequency matcher, and the other end of the first power divider is connected with the first antenna terminal; one end of the second power divider is connected with the other end of the radio frequency matcher, and the other end of the second power divider is connected with the third antenna terminal; one end of the first voltage balance capacitor is connected with the second antenna terminal, and the other end of the first voltage balance capacitor is grounded; and one end of the second voltage balance capacitor is connected with the fourth antenna terminal, and the other end of the second voltage balance capacitor is grounded.
Optionally, the rf antenna surrounds the reaction chamber dielectric tube and has a multi-turn continuous coil, and both the first reaction region side and the second reaction region side are provided with the rf antenna, and the rf antenna has a first antenna terminal and a second antenna terminal.
Optionally, the inductively coupled radio frequency unit further includes: a radio frequency source; one end of the radio frequency matcher is connected with the radio frequency source, and the other end of the radio frequency matcher is connected with the first antenna terminal; and one end of the voltage balance capacitor is connected with the second antenna terminal, and the other end of the voltage balance capacitor is grounded.
Optionally, the longitudinal section of the reaction chamber medium pipe is trapezoidal.
Optionally, the method further includes: and the cooling device is positioned at the top of the shielding case and used for cooling the radio frequency antenna and the reaction chamber medium pipe.
Optionally, the method further includes: and the wafer clamping platform is positioned in the reaction cavity main body and below the reaction chamber medium pipe.
Optionally, the method further includes: the radio frequency isolation ring is positioned on the side part of the wafer clamping platform; and the plasma confinement ring is positioned outside the radio frequency isolation ring.
The invention also provides a working method of the inductive coupling reactor, which adopts any one of the inductive coupling reactors and comprises the following steps: placing a wafer in the reaction chamber body; adjusting the feed gas to the first reaction zone and the feed gas to the second reaction zone; after adjusting the gas inlet of the first reaction area and the gas inlet of the second reaction area, the radio frequency antenna generates plasmas in the first reaction area and the second reaction area.
Optionally, the rf antenna includes an upper rf antenna and a lower rf antenna that are separated from each other, the upper rf antenna is located at a side of the first reaction region, and the lower rf antenna is located at a side of the second reaction region; the operation method of the inductive coupling reactor further comprises the following steps: and adjusting the radio frequency power fed by the upper radio frequency antenna and the radio frequency power fed by the lower radio frequency antenna.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
in the inductive coupling reactor provided by the technical scheme of the invention, the inner side wall of the reaction chamber medium pipe is also provided with the isolating piece, and the isolating piece divides the inner area of the reaction chamber medium pipe into the first reaction area and the second reaction area positioned at two sides of the first reaction area, namely, the first reaction area and the second reaction area form a double reaction area. Because the air inflow of the first reaction area and the air inflow of the second reaction area are adjustable, the plasma density distributed in the first reaction area and the plasma density distributed in the second reaction area can be controlled by adjusting the air inflow of the first reaction area and the air inflow of the second reaction area and under the action of the radio frequency antenna. And further, the distribution of the plasma above the wafer is well controlled, and the wafer is correspondingly and controllably etched. In summary, the inductively coupled reactor can enhance the control capability of plasma distribution.
Further, the air inflow of the first reaction area and the air inflow of the second reaction area are respectively and independently adjustable, so that the air inflow of the first reaction area and the air inflow of the second reaction area can be independently controlled.
Further, the radio frequency antenna comprises an upper radio frequency antenna and an upper radio frequency antenna. The upper radio frequency antenna is used for generating plasma in the first reaction medium chamber, and the lower radio frequency antenna is used for generating plasma in the second reaction area. The density distribution of the plasma generated in the second reaction area is adjustable by adjusting the radio-frequency power fed in the lower radio-frequency antenna, and the density distribution of the plasma generated in the first reaction medium chamber is adjustable by adjusting the radio-frequency power fed in the upper radio-frequency antenna. And further, the distribution of the plasma above the wafer is well controlled, and the wafer is correspondingly and controllably etched. In summary, the inductively coupled reactor can enhance the control capability of plasma distribution.
Drawings
FIG. 1 is a schematic cross-sectional view of an inductively coupled reactor;
FIG. 2 is a schematic cross-sectional view of an inductively coupled reactor according to an embodiment of the present invention;
FIG. 3 illustrates a method of operating an inductively coupled reactor according to another embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of an inductively coupled reactor according to another embodiment of the present invention.
Detailed Description
As described in the background, it is difficult to controllably adjust the distribution of the generated plasma in existing inductively coupled reactors.
An inductively coupled reactor, referring to fig. 1, includes an inductively coupled radio frequency unit, where the inductively coupled radio frequency unit includes a shielding case 1000, a reaction chamber dielectric tube 1001 located inside the shielding case 1000, and a coil-shaped radio frequency antenna 1002 located on a side wall of the reaction chamber dielectric tube 1001, the reaction chamber dielectric tube 1001 is cylindrical, the coil-shaped radio frequency antenna 1002 surrounds the reaction chamber dielectric tube 1001, and a position of the coil-shaped radio frequency antenna 1002 is fixed.
In the inductive coupling reactor, gas is introduced into the reaction chamber medium pipe 1001 from the gas inlet pipe 1003 at the top of the reaction chamber medium pipe 1001 and is mixed in the columnar reaction chamber medium pipe 1001, the radio frequency antenna 1002 generates plasma in the reaction chamber medium pipe 1001, the plasma is diffused into the reaction cavity main body, the wafer is positioned in the reaction cavity main body and is opposite to the inductive coupling radio frequency unit, the density distribution of the plasma above the wafer has the characteristic of high middle and low edge and is not adjustable, and the etching is not uniform.
Secondly, a cooling fan 1004 is disposed on the top of the shielding case 1000, but since the reaction chamber medium pipe 1001 is cylindrical, the cooling fan 1004 does not cool the top and the side wall of the reaction chamber medium pipe 1001 uniformly, which causes uneven plasma density distribution in the reaction chamber medium pipe 1001 and further causes uneven plasma density distribution above the wafer.
In order to solve the above technical problem, an embodiment of the present invention provides an inductive coupling reactor, referring to fig. 2, including:
a reaction chamber body 10;
an inductively coupled RF unit 20 located above the main reaction chamber body 10;
the inductively coupled radio frequency unit 20 includes: a shield case 201; the reaction chamber medium pipe 202 is positioned in the shielding case 201, the side wall of the reaction chamber medium pipe 202 is inclined, and the top cross section of the reaction chamber medium pipe 202 is smaller than the bottom cross section; the inner side wall of the reaction chamber medium pipe 202 is also provided with a spacer T, and the spacer T divides the inner area of the reaction chamber medium pipe 202 into a first reaction area A and second reaction areas B positioned at two sides of the first reaction area A; and the radio frequency antenna is positioned in the shielding case 201 and distributed at the side part of the reaction chamber medium pipe 202.
In this embodiment, the reaction chamber medium pipe 202 has a trapezoidal longitudinal cross-section.
In other embodiments, the reaction chamber media tube 202 may also be tapered.
In this embodiment, the method further includes: a first gas inlet channel 208a penetrating the reaction chamber medium pipe 202 at the top of the first reaction area A; and a second gas inlet passage 208B penetrating the reaction chamber medium pipe 202 at the side of the second reaction region B.
In this embodiment, the gas inlet of the first reaction area a and the gas inlet of the second reaction area B are respectively and independently adjustable, that is, the gas introduced into the first gas inlet channel 208a and the gas introduced into the second gas inlet channel 208B are independently controlled, so that the flow rates of the first gas inlet channel 208a and the second gas inlet channel 208B can be independently controlled.
In other embodiments, the first and second intake passages 208a, 208b may be commonly connected to a common intake pipe.
In this embodiment, the spacer T has a solid structure.
In other embodiments, the spacer T has an opening (not shown) therein through the thickness of the spacer T, the opening being sized to: the minimum distance that the charged particles of the plasma of the first reaction region A move when leaving the opening is greater than the mean free path of the charged particles of the first reaction region A, and the minimum distance that the charged particles of the plasma of the second reaction region B move when leaving the opening is greater than the mean free path of the charged particles of the second reaction region B; the openings are adapted for exchange between the gas in the first reaction zone a and the gas inside the second reaction zone B.
Since the separator T has an opening penetrating the thickness of the separator T, it is possible to provide the first gas inlet passage without providing the second gas inlet passage, and the gas of the first reaction region can enter the second reaction region through the opening.
In the case where the separator T has an opening penetrating the thickness of the separator T, both the first air intake passage and the second air intake passage may be provided.
In this embodiment, the rf antenna includes an upper rf antenna 203B and a lower rf antenna 203a that are separated from each other, the upper rf antenna 203B is located on a side portion of the first reaction area a, the lower rf antenna 203a is located on a side portion of the second reaction area B, and the rf power fed by the upper rf antenna 203B and the rf power fed by the lower rf antenna 203a are adjustable respectively.
In this embodiment, the upper rf antenna 203b is shaped like a coil, and the lower rf antenna 203a is shaped like a coil.
In this embodiment, the upper rf antenna 203b and the lower rf antenna 203a are separated.
The upper rf antenna 203b surrounds the reaction chamber dielectric tube 202 at the side of the first reaction region a, and has a plurality of continuous coils, and the distance from each coil to the reaction chamber dielectric tube 202 is equal.
The lower rf antenna 203a surrounds the side of the second reaction medium chamber B and has a plurality of continuous turns of coil, each turn of coil being equidistant from the second reaction medium chamber B.
The lower rf antenna 203a has a first antenna terminal 2031 and a second antenna terminal 2032, and the upper rf antenna 203b has a third antenna terminal 2033 and a fourth antenna terminal 2034; the first antenna terminal 2031 is suitable for feeding a first radio frequency, the third antenna terminal 2033 is suitable for feeding a second radio frequency, and the first radio frequency and the second radio frequency are adjustable in size.
In this embodiment, the inductively coupled rf unit 20 further includes: a radio frequency source 205; a radio frequency matcher 206, wherein one end of the radio frequency matcher 206 is connected with the radio frequency source 205; a first power divider 206a, wherein one end of the first power divider 206a is connected to the other end of the rf matcher 206, and the other end of the first power divider 206a is connected to the first antenna terminal 2031; a second power divider 206b, wherein one end of the second power divider 206b is connected to the other end of the rf matcher 206, and the other end of the second power divider 206b is connected to the third antenna terminal 2033; a first voltage balance capacitor 207a, wherein one end of the first voltage balance capacitor 207a is connected to the second antenna terminal 2032, and the other end of the first voltage balance capacitor 207a is grounded; a second voltage balance capacitor 207b, wherein one end of the second voltage balance capacitor 207b is connected to the fourth antenna terminal 2034, and the other end of the second voltage balance capacitor 207b is grounded.
The first voltage balancing capacitor 207a functions as: the second antenna terminal 2032 is kept at a certain voltage, and the voltage difference between the first antenna terminal 2031 and the second antenna terminal 2032 is small, so that the plasma can collide with the sidewall of the second reaction region B.
The second voltage balancing capacitor 207b functions as: the fourth antenna terminal 2034 is kept at a certain voltage, and the voltage difference between the fourth antenna terminal 2034 and the third antenna terminal 2033 is small, so that the plasma can collide with the sidewall of the first reaction region a.
In this embodiment, the method further includes: a wafer clamping platform 101 disposed within the chamber body 10 and below the chamber media tube 202.
In this embodiment, the lower rf antenna 203a is used for generating plasma in the second reaction region B, and the upper rf antenna 203B is used for generating plasma in the first reaction region a.
The inductively coupled reactor further comprises: an RF isolation ring 102 is positioned on the side of the wafer chuck table 101.
The inductively coupled reactor further comprises: a plasma confinement ring 103 disposed at a side of the wafer holding platform 101, the plasma confinement ring 103 being disposed outside the RF isolation ring 102.
The inductively coupled reactor further comprises: further comprising: and the cooling device 209 is positioned at the top of the shielding case 201, and the cooling device 209 is used for cooling the radio frequency antenna and the reaction chamber medium pipe 202.
The inductive coupling reactor of fig. 2 operates on the following principle: the partition member T divides the inner region of the reaction chamber medium pipe 202 into a first reaction region a and a second reaction region B located on both sides of the first reaction region a, that is, the first reaction region a and the second reaction region B constitute a double reaction region. The air inflow of the first reaction area A and the air inflow of the second reaction area B are adjustable, and the plasma density distributed in the first reaction area A and the plasma density distributed in the second reaction area B can be controlled by adjusting the air inflow of the first reaction area A and the air inflow of the second reaction area B under the action of the radio frequency antenna. And further, the distribution of the plasma above the wafer is well controlled, and the wafer is correspondingly and controllably etched. In summary, the inductively coupled reactor can enhance the control capability of plasma distribution.
In this embodiment, the density distribution of the plasma generated inside the second reaction region B is adjustable by adjusting the rf power fed into the lower rf antenna 203a, the density distribution of the plasma generated inside the first reaction region a is adjustable by adjusting the rf power fed into the upper rf antenna 203B, the rf power provided by the rf source 205 is fed into the lower rf antenna 203a and the upper rf antenna 203B through the rf matcher 206, the rf power fed into the lower rf antenna 203a is controlled and adjusted by the first power distributor 206a, the rf power fed into the upper rf antenna 203B is controlled and adjusted by the second power distributor 206B, the control of the rf power fed into the lower rf antenna 203a by the first power distributor 206a is independent of the control of the rf power fed into the upper rf antenna 203B by the second power distributor 206B, the voltage at the second antenna terminal 2032 of the lower rf antenna 203a is distributed and controlled by the first voltage balance capacitor 207a, the voltage of the fourth antenna terminal 2034 of the upper RF antenna 203B is distributed and controlled by the second voltage balance capacitor 207B, the RF current in the coil of the upper RF antenna 203B generates an alternating magnetic field H1 perpendicular to the current plane in the first reaction region a, the RF current in the coil of the lower RF antenna 203a generates an alternating magnetic field H2 perpendicular to the current plane in the second reaction region B, the alternating magnetic field H1 induces an angular electric field E1 parallel to the current direction of the coil in the first reaction region a, the alternating magnetic field H2 induces an angular electric field E1 parallel to the current direction of the coil in the second reaction region B, the reactant gas introduced into the first reaction region a generates plasma under the action of the electric field E1, the reactant gas introduced into the second reaction region B generates plasma under the action of the angular electric field E2, and the density of the plasma in the first reaction region a can be controlled by the magnitude of the RF power of the upper RF antenna 203B and the reactant gas flow introduced into the first reaction region a The amount of the plasma is controlled, and the density of the plasma in the second reaction region B can be controlled by the magnitude of the rf power of the lower rf antenna 203a and the flow rate of the reaction gas introduced into the second reaction region B.
The present invention further provides a working method of an inductive coupling reactor, which adopts the above inductive coupling reactor, please refer to fig. 3, and includes the following steps:
s01, placing the wafer in the reaction chamber main body 10;
s02, adjusting the air inflow of the first reaction area A and the air inflow of the second reaction area B;
and S03, after adjusting the air inflow of the first reaction area A and the air inflow of the second reaction area B, the radio frequency antenna generates plasmas inside the first reaction area A and the second reaction area B.
The intake air in the first intake passage 208a and the intake air in the second intake passage 208b may be adjusted, and specifically, the intake air in the first intake passage 208a and the intake air in the second intake passage 208b may be adjusted together or independently. Due to the existence of the partition piece, the independent control of the plasma density in the two relatively independent plasma generating chambers can be realized.
Further, the gas intake in the first gas intake passage 208a and the gas intake in the second gas intake passage 208B may be adjusted together or independently, so that the plasma density of the first reaction region a is controlled by controlling the flow rate of the gas in the first gas intake passage 208a, and the plasma density of the second reaction region B is controlled by controlling the flow rate of the gas in the second gas intake passage 208B.
In this embodiment, the operating method of the inductive coupling reactor further includes: the rf power fed by the upper rf antenna 203b and the rf power fed by the lower rf antenna 203a are adjusted. The density of the plasma in the first reaction area a can be controlled by the rf power of the upper rf antenna 203B and the flow rate of the reaction gas introduced into the first reaction area a, and the density of the plasma in the second reaction area B can be controlled by the rf power of the lower rf antenna 203a and the flow rate of the reaction gas introduced into the second reaction area B.
Specifically, the wafer is placed on the wafer chuck plate 101, the rf power fed from the lower rf antenna 203a is adjusted by the first power divider 206a, and the rf power fed from the upper rf antenna 203b is adjusted by the second power divider 206 b.
Referring to fig. 4, the difference between the inductive coupling reactor in this embodiment and the inductive coupling reactor in the previous embodiment is that the rf antenna 203 surrounds the reaction chamber medium tube 202 and has a multi-turn continuous coil, the rf antenna 203 is disposed on both the first reaction area a side and the second reaction area B side, and the rf antenna 203 has a first antenna terminal 2031 'and a second antenna terminal 2032'.
The rf antenna 203 of this embodiment is a unitary body.
The inductively coupled radio frequency unit further comprises: a radio frequency source 205; a radio frequency matcher 206, wherein one end of the radio frequency matcher 206 is connected to the radio frequency source 205, and the other end of the radio frequency matcher 206 is connected to the first antenna terminal 2031'; a voltage balance capacitor 207, wherein one end of the voltage balance capacitor 207 is connected to the second antenna terminal 2032', and the other end of the voltage balance capacitor 207 is grounded.
In this embodiment, the second antenna terminal 2032 'is higher than the first antenna terminal 2031'.
In other embodiments, the first antenna terminal is higher than the second antenna terminal.
The same contents in this embodiment as in the previous embodiment will not be described in detail.
The difference between the operation method of the inductive coupling reactor in this embodiment and the operation method in the previous embodiment is that: by adjusting the air intake flow of the first reaction area a and the air intake flow of the second reaction area B, the rf antenna 203 generates plasma inside the first reaction area a and the second reaction area B, and the power fed by the rf antenna 203 is consistent corresponding to the first reaction area a and the second reaction area B.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (14)
1. An inductively coupled reactor, comprising:
a reaction chamber body;
the inductive coupling radio frequency unit is positioned above the reaction cavity main body;
the inductively coupled radio frequency unit includes: a shield case; the reaction chamber medium pipe is positioned in the shielding cover, the outer side wall of the reaction chamber medium pipe is inclined, the top cross section of the reaction chamber medium pipe is smaller than the bottom cross section of the reaction chamber medium pipe, and the inner side wall of the reaction chamber medium pipe is also provided with a partition piece which divides the inner area of the reaction chamber medium pipe into a first reaction area and second reaction areas positioned on two sides of the first reaction area; and the radio frequency antenna is positioned in the shielding cover and distributed on the side part of the reaction chamber medium tube.
2. The inductive coupling reactor of claim 1, further comprising: a first gas inlet channel penetrating through a reaction chamber medium pipe at the top of the first reaction area; and the second air inlet channel penetrates through a reaction chamber medium pipe at the side part of the second reaction area, and the air inlet of the first reaction area and the air inlet of the second reaction area are respectively independently adjustable.
3. The inductive coupling reactor of claim 1, wherein said spacer has an opening therein extending through a thickness of said spacer, said opening being sized to: the minimum distance that the charged particles of the plasma of the first reaction region move when leaving the opening is greater than the mean free path of the charged particles of the first reaction region, and the minimum distance that the charged particles of the plasma of the second reaction region move when leaving the opening is greater than the mean free path of the charged particles of the second reaction region; the openings are adapted for exchange between gases in the first reaction zone and gases inside the second reaction zone.
4. The inductively coupled reactor of claim 1, wherein the RF antenna includes an upper RF antenna and a lower RF antenna that are separated from each other, the upper RF antenna is located at a side of the first reaction region, the lower RF antenna is located at a side of the second reaction region, and the RF power fed from the upper RF antenna and the RF power fed from the lower RF antenna are adjustable respectively.
5. The inductive coupling reactor of claim 4, wherein said lower RF antenna has a first antenna terminal and a second antenna terminal, and said upper RF antenna has a third antenna terminal and a fourth antenna terminal; the first antenna terminal is suitable for feeding in a first radio frequency, the third antenna terminal is suitable for feeding in a second radio frequency, and the first radio frequency and the second radio frequency are adjustable in size.
6. The inductively coupled reactor of claim 5, wherein the inductively coupled RF unit further comprises: a radio frequency source; one end of the radio frequency matcher is connected with the radio frequency source; one end of the first power divider is connected with the other end of the radio frequency matcher, and the other end of the first power divider is connected with the first antenna terminal; one end of the second power divider is connected with the other end of the radio frequency matcher, and the other end of the second power divider is connected with the third antenna terminal; one end of the first voltage balance capacitor is connected with the second antenna terminal, and the other end of the first voltage balance capacitor is grounded; and one end of the second voltage balance capacitor is connected with the fourth antenna terminal, and the other end of the second voltage balance capacitor is grounded.
7. The inductive coupling reactor of claim 1, wherein said rf antenna surrounds said reaction chamber dielectric tube and has a continuous coil with a plurality of turns, and each of the first reaction region side portion and the second reaction region side portion is provided with an rf antenna having a first antenna terminal and a second antenna terminal.
8. The inductively coupled reactor of claim 7, wherein the inductively coupled RF unit further comprises: a radio frequency source; one end of the radio frequency matcher is connected with the radio frequency source, and the other end of the radio frequency matcher is connected with the first antenna terminal; and one end of the voltage balance capacitor is connected with the second antenna terminal, and the other end of the voltage balance capacitor is grounded.
9. The inductive coupling reactor of claim 1, wherein said reaction chamber medium pipe has a trapezoidal longitudinal cross-sectional shape.
10. The inductive coupling reactor of claim 1, further comprising: and the cooling device is positioned at the top of the shielding case and used for cooling the radio frequency antenna and the reaction chamber medium pipe.
11. The inductive coupling reactor of claim 1, further comprising: and the wafer clamping platform is positioned in the reaction cavity main body and below the reaction chamber medium pipe.
12. The inductive coupling reactor of claim 11, further comprising: the radio frequency isolation ring is positioned on the side part of the wafer clamping platform; and the plasma confinement ring is positioned outside the radio frequency isolation ring.
13. A method of operating an inductively coupled reactor, using the inductively coupled reactor of any of claims 1-12, comprising:
placing a wafer in the reaction chamber body;
adjusting the feed gas to the first reaction zone and the feed gas to the second reaction zone;
after adjusting the gas inlet of the first reaction area and the gas inlet of the second reaction area, the radio frequency antenna generates plasmas in the first reaction area and the second reaction area.
14. The method of claim 13, wherein the rf antenna comprises an upper rf antenna and a lower rf antenna separated from each other, the upper rf antenna is located at a side of the first reaction region, and the lower rf antenna is located at a side of the second reaction region;
the operation method of the inductive coupling reactor further comprises the following steps: and adjusting the radio frequency power fed by the upper radio frequency antenna and the radio frequency power fed by the lower radio frequency antenna.
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