CN111769060A - Inductive coupling reactor and working method thereof - Google Patents
Inductive coupling reactor and working method thereof Download PDFInfo
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- CN111769060A CN111769060A CN202010732091.3A CN202010732091A CN111769060A CN 111769060 A CN111769060 A CN 111769060A CN 202010732091 A CN202010732091 A CN 202010732091A CN 111769060 A CN111769060 A CN 111769060A
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- 230000008878 coupling Effects 0.000 title claims abstract description 31
- 238000010168 coupling process Methods 0.000 title claims abstract description 31
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 31
- 230000001939 inductive effect Effects 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000012429 reaction media Substances 0.000 claims abstract description 166
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims description 31
- 239000003990 capacitor Substances 0.000 claims description 26
- 238000001816 cooling Methods 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 43
- 230000008569 process Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/327—Arrangements for generating the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
An inductive coupling reactor and a working method thereof, the inductive coupling reactor comprises: a reaction chamber body; an inductively coupled plasma source located above the reaction chamber body; the inductively coupled plasma source includes: a first reaction medium chamber; the bottom of the side wall of the second reaction medium chamber extends into the first reaction medium chamber and is adjustable in height; a lower RF antenna located on a side of the first reaction medium chamber; an upper RF antenna located on the side of the second reaction medium chamber; the radio frequency power fed by the upper radio frequency antenna and the radio frequency power fed by the lower radio frequency antenna are respectively adjustable.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an inductive coupling reactor and a working method thereof.
Background
In semiconductor manufacturing, a plurality of processes are involved, each of which is performed by a certain apparatus and process. Among them, the etching process is an important process in semiconductor manufacturing, such as a plasma etching process. The plasma etching process is to utilize reaction gas to generate plasma after obtaining energy, wherein the plasma comprises charged particles such as ions and electrons, neutral atoms, molecules and free radicals with high chemical activity, and an etching object is etched through physical and chemical reactions.
However, during plasma etching, the etching conditions at the edge of the wafer and the etching conditions at the center of the wafer are greatly different, and the etching conditions include: plasma density distribution, radio frequency electric field, temperature distribution, etc. Where plasma density distribution is a very important etching condition. For example, the plasma density distributed over the center region of the wafer is typically greater than the plasma density distributed over the edge region of the wafer, and such a distribution is difficult to adjust.
Therefore, it is desirable to provide an inductively coupled reactor with controllable adjustment of the plasma distribution to meet the needs.
Disclosure of Invention
The invention aims to provide an inductive coupling reactor and a working method thereof, which can enhance the control capability on plasma distribution.
In order to solve the above technical problems, the present invention provides an inductive coupling reactor, comprising: a reaction chamber body; an inductively coupled plasma source located above the reaction chamber body; the inductively coupled plasma source includes: a first reaction medium chamber; the bottom of the side wall of the second reaction medium chamber extends into the first reaction medium chamber and is adjustable in height; a lower RF antenna located on a side of the first reaction medium chamber; an upper RF antenna located on the side of the second reaction medium chamber; the radio frequency power fed by the upper radio frequency antenna and the radio frequency power fed by the lower radio frequency antenna are respectively adjustable.
Optionally, the second reaction medium chamber further comprises a bearing part, the bearing part is fixed to the side wall of the second reaction medium chamber and extends outwards from the side wall of the second reaction medium chamber, and the bearing part is located between the top end and the bottom end of the side wall of the second reaction medium chamber.
Optionally, the inductively coupled plasma source further includes: a seal between the carrier and a top surface of the first reaction medium chamber.
Optionally, the inductively coupled plasma source further includes: a height control member located between the carrier and the top surface of the first reaction medium chamber, the height control member being adapted to control the longitudinal distance between the second reaction medium chamber and the top surface of the first reaction medium chamber.
Optionally, the height control component is a dielectric ring, and the thickness of the dielectric ring is adjustable.
Optionally, the inductively coupled plasma source further includes: a first seal between the media ring and a top surface of the first reaction media chamber; a second seal between the media ring and the carrier.
Optionally, the height control member is a spring.
Optionally, the inductively coupled plasma source further includes: the first gas inlet channel penetrates through the top wall of the first reaction medium chamber, and the first gas inlet channel is suitable for introducing etching gas for etching the wafer into the first reaction medium chamber; and the second gas inlet channel is positioned at the top of the second reaction medium chamber and is suitable for introducing etching gas for etching the wafer into the second reaction medium chamber.
Optionally, the lower rf antenna has a first antenna terminal and a second antenna terminal, and the upper rf antenna has a third antenna terminal and a fourth antenna terminal; the first antenna terminal is suitable for feeding in a first radio frequency, the third antenna terminal is suitable for feeding in a second radio frequency, and the first radio frequency and the second radio frequency are adjustable in size.
Optionally, the inductively coupled plasma source further includes: a radio frequency source; one end of the radio frequency matcher is connected with the radio frequency source; one end of the first power divider is connected with the other end of the radio frequency matcher, and the other end of the first power divider is connected with the first antenna terminal; one end of the second power divider is connected with the other end of the radio frequency matcher, and the other end of the second power divider is connected with the third antenna terminal; one end of the first voltage balance capacitor is connected with the second antenna terminal, and the other end of the first voltage balance capacitor is grounded; and one end of the second voltage balance capacitor is connected with the fourth antenna terminal, and the other end of the second voltage balance capacitor is grounded.
Optionally, the method further includes: and the wafer clamping platform is positioned in the reaction cavity body and is positioned below the first reaction medium chamber.
Optionally, the method further includes: the radio frequency isolation ring is positioned on the side part of the wafer clamping platform; and the plasma confinement ring is positioned outside the radio frequency isolation ring.
Optionally, the method further includes: the first shielding cover is positioned outside the first reaction medium chamber and the lower radio-frequency antenna and used for carrying out radio-frequency shielding on the first reaction medium chamber and the lower radio-frequency antenna; and the second shielding cover is positioned outside the second reaction medium chamber and the upper radio frequency antenna and is used for carrying out radio frequency shielding on the second reaction medium chamber and the upper radio frequency antenna.
Optionally, the method further includes: a first cooling device located on top of the first shield, the first cooling device for cooling the lower rf antenna and the first reaction medium chamber; a second cooling device located on top of the second shield, the second cooling device being configured to cool the upper RF antenna and the second reaction medium chamber.
The invention also provides a working method of the inductive coupling reactor, which adopts any one of the inductive coupling reactors and comprises the following steps: placing a wafer in the reaction chamber body; adjusting the radio frequency power fed by the upper radio frequency antenna and the radio frequency power fed by the lower radio frequency antenna; after the radio frequency power fed by the upper radio frequency antenna and the radio frequency power fed by the lower radio frequency antenna are adjusted, the lower radio frequency antenna generates plasma inside the first reaction medium chamber, and the upper radio frequency antenna generates plasma inside the second reaction medium chamber.
Optionally, the inductively coupled plasma source further includes: a height control member located between the carrier and the top surface of the first reaction medium chamber; the working method further comprises the following steps: the height control means is used to control the position of the first reaction medium chamber relative to the second reaction medium chamber.
Optionally, the inductively coupled plasma source further includes: the first gas inlet channel penetrates through the top wall of the first reaction medium chamber, and the first gas inlet channel is suitable for introducing etching gas for etching the wafer into the first reaction medium chamber; the second gas inlet channel is positioned at the top of the second reaction medium chamber and is suitable for introducing etching gas for etching the wafer into the second reaction medium chamber; the working method further comprises the following steps: the kind and flow rate of gas in the first intake passage and the kind and flow rate of gas in the second intake passage are adjusted.
Optionally, the inductively coupled plasma source further includes: a radio frequency source; one end of the radio frequency matcher is connected with the radio frequency source; one end of the first power divider is connected with the other end of the radio frequency matcher, and the other end of the first power divider is connected with the first antenna terminal; one end of the second power divider is connected with the other end of the radio frequency matcher, and the other end of the second power divider is connected with the third antenna terminal; one end of the first voltage balance capacitor is connected with the second antenna terminal, and the other end of the first voltage balance capacitor is grounded; one end of the second voltage balance capacitor is connected with the fourth antenna terminal, and the other end of the second voltage balance capacitor is grounded; adjusting the rf power fed by the upper rf antenna and the rf power fed by the lower rf antenna, including: and adjusting the radio frequency power fed in by the lower radio frequency antenna by adopting a first power divider, and adjusting the radio frequency power fed in by the upper radio frequency antenna by adopting a second power divider.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
the inductive coupling reactor provided by the technical scheme of the invention comprises a first reaction medium chamber and a second reaction medium chamber positioned above the first reaction medium chamber, wherein the lower radio frequency antenna is used for generating plasma in the first reaction medium chamber, and the upper radio frequency antenna is used for generating plasma in the second reaction medium chamber. And because the bottom of the second reaction medium chamber is communicated with the middle area of the top of the first reaction medium chamber, and the bottom of the side wall of the second reaction medium chamber extends into the first reaction medium chamber and has adjustable height, two relatively independent plasma generating chambers can be formed by the side wall of the second reaction medium chamber extending to the part in the first reaction medium chamber. The density distribution of the plasma generated in the first reaction medium chamber is adjustable by adjusting the radio-frequency power fed in the lower radio-frequency antenna, and the density distribution of the plasma generated in the second reaction medium chamber is adjustable by adjusting the radio-frequency power fed in the upper radio-frequency antenna. And further, the distribution of the plasma above the wafer is well controlled, and the wafer is correspondingly and controllably etched. In summary, the inductively coupled reactor can enhance the control capability of plasma distribution.
Further, the inductively coupled plasma source further comprises: the first gas inlet channel penetrates through the top wall of the first reaction medium chamber, and the first gas inlet channel is suitable for introducing etching gas for etching the wafer into the first reaction medium chamber; and the second gas inlet channel is positioned at the top of the second reaction medium chamber and is suitable for introducing etching gas for etching the wafer into the second reaction medium chamber. The gas in the first gas inlet channel and the gas in the second gas inlet channel can be independently adjusted, and then the independent control of the plasma density in the two relatively independent plasma generating chambers is realized.
Further, the inductively coupled plasma source further comprises: a height control feature between the carrier and the top surface of the first reaction medium chamber, the height control feature adapted to control the longitudinal distance between the top surfaces of the second reaction medium chamber and the first reaction medium chamber, thereby controlling the degree of decoupling of the two relatively independent plasma generation chambers.
Drawings
FIG. 1 is a schematic cross-sectional view of an inductively coupled reactor;
FIG. 2 is a schematic cross-sectional view of an inductively coupled reactor according to an embodiment of the present invention;
FIG. 3 illustrates a method of operating an inductively coupled reactor according to another embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of an inductively coupled reactor according to another embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of an inductively coupled reactor according to another embodiment of the present invention.
Detailed Description
As described in the background, it is difficult to controllably adjust the distribution of the generated plasma in existing inductively coupled reactors.
Referring to fig. 1, an inductively coupled reactor includes an inductively coupled plasma source, where the inductively coupled plasma source includes a shielding case 1000, a reaction chamber dielectric tube 1001 located inside the shielding case 1000, and a coil-shaped rf antenna 1002 located on a side wall of the reaction chamber dielectric tube 1001, the reaction chamber dielectric tube 1001 is cylindrical, the coil-shaped rf antenna 1002 surrounds the reaction chamber dielectric tube 1001, and a position of the coil-shaped rf antenna 1002 is fixed.
In the inductive coupling reactor, gas is introduced into the reaction chamber medium pipe 1001 from the gas inlet pipe 1003 at the top of the reaction chamber medium pipe 1001 and is mixed in the columnar reaction chamber medium pipe 1001, the radio frequency antenna 1002 generates plasma in the reaction chamber medium pipe 1001, the plasma is diffused into the reaction cavity main body, the wafer is positioned in the reaction cavity main body and is opposite to the inductive coupling plasma source, the density distribution of the plasma above the wafer has the characteristic of high middle and low edge and is uncontrollable, and uneven etching is caused.
Secondly, a cooling fan 1004 is disposed on the top of the shielding case 1000, but since the reaction chamber medium pipe 1001 is cylindrical, the cooling fan 1004 does not cool the top and the side wall of the reaction chamber medium pipe 1001 uniformly, which causes uneven plasma density distribution in the reaction chamber medium pipe 1001 and further causes uneven plasma density distribution above the wafer.
In order to solve the above technical problem, an embodiment of the present invention provides an inductive coupling reactor, referring to fig. 2, including:
a reaction chamber body 10;
an inductively coupled plasma source located above the reaction chamber body 10;
the inductively coupled plasma source includes: a first reaction medium chamber 201; a second reaction medium chamber 202 located above the first reaction medium chamber 201, wherein the bottom of the second reaction medium chamber 202 is communicated with the middle area of the top of the first reaction medium chamber 201, and the bottom of the sidewall of the second reaction medium chamber 202 extends into the first reaction medium chamber 201 and has an adjustable height; a lower rf antenna 203a disposed inside the first shielding can 20 and distributed at a side of the first reaction medium chamber 201; an upper rf antenna 203b located inside the second shielding can 21 and distributed at the side of the second reaction medium chamber 202; the rf power fed by the upper rf antenna 203b and the rf power fed by the lower rf antenna 203a are adjustable respectively.
The inductively coupled plasma source further comprising: a first shield case 20; the first shielding case 20 is located outside the first reaction medium chamber 201 and the lower rf antenna 203a, and the first shielding case 20 is used for shielding the first reaction medium chamber 201 and the lower rf antenna 203a by rf; and a second shielding cover 21, where the second shielding cover 21 is located outside the second reaction medium chamber 202 and the upper rf antenna 203b, and the second shielding cover 21 is configured to perform rf shielding on the second reaction medium chamber 202 and the upper rf antenna 203 b.
The lateral dimension of the first shield can 20 is larger than that of the second shield can 21, the second shield can 21 is located above the middle region of the first shield can 20, and the side wall of the second shield can 21 is in contact with the top surface of the first shield can 20. The bottom of the first shield case 20 is penetrated by the second shield case 21.
The lateral dimension of the first reaction medium chamber 201 is larger than the lateral dimension of the second reaction medium chamber 202. The first reaction medium chamber 201 is located above the middle region of the second reaction medium chamber 202. The bottom of the second reaction medium chamber 202 is connected to the top middle region of the first reaction medium chamber 201.
The bottom of the side wall of the second reaction medium chamber 202 extends into the first reaction medium chamber 201, so that two relatively independent plasma generating chambers can be formed by the side wall of the second reaction medium chamber 202 extending to the part in the first reaction medium chamber 201, and the two relatively independent plasma generating chambers are separated to some extent by the side wall of the second reaction medium chamber 202 extending to the inside of the first reaction medium chamber 201.
In this embodiment, the upper rf antenna 203b is shaped like a coil, and the lower rf antenna 203a is shaped like a coil.
The upper rf antenna 203b and the lower rf antenna 203a are separate.
The upper rf antenna 203b surrounds the side of the second reaction medium chamber 202 and has a plurality of continuous turns, each turn being equidistant from the second reaction medium chamber 202.
In this embodiment, the lower rf antenna 203a surrounds the side of the first reaction medium chamber 201 and has a plurality of continuous turns, and each turn of the coil is equidistant from the first reaction medium chamber 201.
In this embodiment, the second reaction medium chamber 202 further comprises a carrier 202a, the carrier 202a is fixed to the sidewall of the second reaction medium chamber 202 and extends outward from the sidewall of the second reaction medium chamber 202, and the carrier 202a is located between the top end and the bottom end of the sidewall of the second reaction medium chamber 202.
The bearing part 202a may be integrally formed with the sidewall of the second reaction medium chamber 202, or the bearing part 202a may be adhesively fixed to the sidewall of the second reaction medium chamber 202.
The side walls of the first reaction medium chamber 201 are in contact with the top side walls of the second reaction medium chamber 202.
In this embodiment, the inductively coupled plasma source further includes: a seal 204, said seal 204 being located between the top surfaces of said first reaction medium chamber 201 of said carrier part 202 a.
The inductively coupled plasma source further comprising: a first gas inlet channel 205a penetrating through the top wall of the first reaction medium chamber 201, wherein the first gas inlet channel 205a is suitable for introducing etching gas for etching a wafer into the first reaction medium chamber 201; a second gas inlet channel 205b located at the top of the second reaction medium chamber 202, wherein the second gas inlet channel 205b is adapted to introduce etching gas for etching a wafer into the second reaction medium chamber 202.
The lower rf antenna 203a has a first antenna terminal 2031 and a second antenna terminal 2032, and the upper rf antenna 203b has a third antenna terminal 2033 and a fourth antenna terminal 2034; the first antenna terminal 2031 is suitable for feeding a first radio frequency, the third antenna terminal 2033 is suitable for feeding a second radio frequency, and the first radio frequency and the second radio frequency are adjustable in size.
The inductively coupled plasma source further comprising: an RF source 206; a radio frequency matcher 207, wherein one end of the radio frequency matcher 207 is connected with the radio frequency source 206; a first power divider 208a, wherein one end of the first power divider 208a is connected to the other end of the rf matcher 207, and the other end of the first power divider 208a is connected to the first antenna terminal 2031; a second power divider 208b, wherein one end of the second power divider 208b is connected to the other end of the rf matcher 207, and the other end of the second power divider 208b is connected to the third antenna terminal 2033; a first voltage balance capacitor 209a, wherein one end of the first voltage balance capacitor 209a is connected to the second antenna terminal 2032, and the other end of the first voltage balance capacitor 209a is grounded; and a second voltage balance capacitor 209b, wherein one end of the second voltage balance capacitor 209b is connected to the fourth antenna terminal 2034, and the other end of the second voltage balance capacitor 209b is grounded.
The first voltage balancing capacitor 209a functions as: the second antenna terminal 2032 is kept at a certain voltage, and the voltage difference between the first antenna terminal 2031 and the second antenna terminal 2032 is small, so that the plasma can collide with the sidewall of the first reaction medium chamber 201.
The function of the second voltage balancing capacitor 209b includes: so that the fourth antenna terminal 2034 is kept at a certain voltage, the voltage difference between the fourth antenna terminal 2034 and the third antenna terminal 2033 is small, and the impact of the plasma on the sidewall of the second reaction medium chamber 202 is reduced.
In this embodiment, the method further includes: a wafer holding platform 101 located within the chamber body 10 and below the first reaction medium chamber 201.
In this embodiment, the lower rf antenna 203a is used to generate plasma in the first reaction medium chamber 201, and the upper rf antenna 203b is used to generate plasma in the second reaction medium chamber 201.
The inductively coupled reactor further comprises: an RF isolation ring 102 is positioned on the side of the wafer chuck table 101.
The inductively coupled reactor further comprises: a plasma confinement ring 103 disposed at a side of the wafer holding platform 101, the plasma confinement ring 103 being disposed outside the rf isolation ring 102, the plasma confinement ring 103 being disposed at a bottom of the first reaction medium chamber 201.
The inductively coupled reactor further comprises: further comprising: a first cooling device 2010, the first cooling device 2010 being located on top of the first shielding case 20, the first cooling device 2010 being configured to cool the lower rf antenna 203a and the first reaction medium chamber 201; a second cooling device 2011, the second cooling device 2011 is located at the top of the second shielding case 21, and the second cooling device 21 is used for cooling the upper rf antenna 203b and the second reaction medium chamber 202.
The inductive coupling reactor of fig. 2 operates on the following principle: two relatively independent plasma generating chambers can be formed by the side walls of the second reaction medium chamber 202 extending to the portion inside said first reaction medium chamber 201. The density distribution of the plasma generated inside the first reaction medium chamber 201 is adjustable by adjusting the rf power fed into the lower rf antenna 203a, the density distribution of the plasma generated inside the second reaction medium chamber 202 is adjustable by adjusting the rf power fed into the upper rf antenna 203b, the rf power provided by the rf source 206 is fed into the lower rf antenna 203a and the upper rf antenna 203b through the rf matching device 207, the rf power fed into the lower rf antenna 203a is controlled and adjusted by the first power divider 208a, the rf power fed into the upper rf antenna 203b is controlled and adjusted by the second power divider 208b, the control of the rf power fed into the lower rf antenna 203a by the first power divider 208a is independent of the control of the rf power fed into the upper rf antenna 203b by the second power divider 208b, the voltage of the second antenna terminal 2032 of the lower rf antenna 203a is distributed and controlled by the first voltage balance capacitor 209a, the voltage of the fourth antenna terminal 2034 of the upper RF antenna 203b is distributed and controlled by the second voltage balance capacitor 209b, the RF in the coil of the lower RF antenna 203a generates an alternating magnetic field H1 perpendicular to the current plane in the first reaction medium chamber 201, the RF current in the coil of the upper RF antenna 203b generates an alternating magnetic field H2 perpendicular to the current plane in the second reaction medium chamber 202, the alternating magnetic field H1 induces an angular electric field E1 parallel to the coil current direction in the first reaction medium chamber 201, the alternating magnetic field H2 induces an angular electric field E2 parallel to the coil current direction in the second reaction medium chamber 202, the reactant gas introduced into the first reaction medium chamber 201 generates plasma under the action of the electric field E1, the reactant gas introduced into the second reaction medium chamber 202 generates plasma under the action of the angular electric field E2, the density of the plasma generated in the first reaction medium chamber 201 is controlled by the RF power of the lower RF antenna 203a The density of the plasma generated in second reaction medium chamber 202 is controlled by the amount of rf power from upper rf antenna 203 b.
The present invention further provides a working method of an inductive coupling reactor, which adopts the above inductive coupling reactor, please refer to fig. 3, and includes the following steps:
s01, placing the wafer in the reaction chamber main body 10;
s02, adjusting the radio frequency power fed by the upper radio frequency antenna 203b and the radio frequency power fed by the lower radio frequency antenna 203 a;
s03, after adjusting the rf power fed from the upper rf antenna 203b and the rf power fed from the lower rf antenna 203a, the lower rf antenna 203a generates plasma inside the first reaction medium chamber 201, and the upper rf antenna 203b generates plasma inside the second reaction medium chamber 202.
Specifically, the wafer is placed on the wafer chuck plate 101, the rf power fed from the lower rf antenna 203a is adjusted by the first power divider 208a, and the rf power fed from the upper rf antenna 203b is adjusted by the second power divider 208 b.
The method of operating an inductively coupled reactor further comprises: the kind and flow rate of gas in the first intake passage 205a and the kind and flow rate of gas in the second intake passage 205b are adjusted.
The gas in the first gas inlet channel 205a and the gas in the second gas inlet channel 205b can be independently adjusted, so that the plasma density in the two relatively independent plasma generating chambers can be independently controlled, the plasma density in the first reaction medium chamber 201 can be further controlled by controlling the type and flow rate of the gas in the first gas inlet channel 205a, and the plasma density in the second reaction medium chamber 202 can be further controlled by controlling the flow rate of the gas in the second gas inlet channel 205 b.
Another embodiment of the present invention provides an inductive coupling reactor, referring to fig. 4, the inductive coupling reactor in this embodiment is different from the inductive coupling reactor in the previous embodiment in that the inductive coupling ion source further comprises: a height control member located between the carrier and the top surface of the first reaction medium chamber, the height control member being adapted to control the longitudinal distance between the second reaction medium chamber and the top surface of the first reaction medium chamber.
In this embodiment, the height control component is a dielectric ring 2043, and the thickness of the dielectric ring 2043 is adjustable.
The seal of the inductively coupled plasma source comprises: a first seal 2041 between the media ring 2043 and the top surface of the first reaction medium chamber 201, and a second seal 2042 between the media ring 2043 and the carrier 202 a.
The same contents in this embodiment as in the previous embodiment will not be described in detail.
The difference between the operation method of the inductive coupling reactor in this embodiment and the operation method in the previous embodiment is that: further comprising: the height control means is used to control the position of the first reaction medium chamber 201 relative to the second reaction medium chamber 202.
It should be noted that the adjustment of the gas in the first and second gas inlet channels, the control of the position of the first reaction medium chamber 201 relative to the second reaction medium chamber 202 by the medium ring 2043, and the adjustment of the rf power fed by the upper rf antenna 203b and the rf power fed by the lower rf antenna 203a may be combined.
Referring to fig. 5, the inductive coupling reactor of the present embodiment is different from the inductive coupling reactor of the previous embodiment in that the height control member is a spring 2044.
The same contents in this embodiment as in the previous embodiment will not be described in detail.
The operation of the inductively coupled reactor in this embodiment is referred to the operation of the previous embodiment.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (18)
1. An inductively coupled reactor, comprising:
a reaction chamber body; an inductively coupled plasma source located above the reaction chamber body;
the inductively coupled plasma source includes: a first reaction medium chamber; the bottom of the side wall of the second reaction medium chamber extends into the first reaction medium chamber and is adjustable in height; a lower RF antenna located on a side of the first reaction medium chamber; an upper RF antenna located on the side of the second reaction medium chamber; the radio frequency power fed by the upper radio frequency antenna and the radio frequency power fed by the lower radio frequency antenna are respectively adjustable.
2. The inductive coupling reactor of claim 1, wherein said second reaction medium chamber further comprises a carrier fixed to and extending outwardly from a sidewall of said second reaction medium chamber, said carrier being located between a top end and a bottom end of said sidewall of said second reaction medium chamber.
3. The inductively coupled reactor of claim 2, wherein the inductively coupled plasma source further comprises: a seal between the carrier and a top surface of the first reaction medium chamber.
4. The inductively coupled reactor of claim 2, wherein the inductively coupled plasma source further comprises: a height control member located between the carrier and the top surface of the first reaction medium chamber, the height control member being adapted to control the longitudinal distance between the second reaction medium chamber and the top surface of the first reaction medium chamber.
5. The inductive coupling reactor of claim 4, wherein said height control means is a dielectric ring, the thickness of said dielectric ring being adjustable.
6. The inductively coupled reactor of claim 5, wherein the inductively coupled plasma source further comprises: a first seal between the media ring and a top surface of the first reaction media chamber; a second seal between the media ring and the carrier.
7. Inductive coupling reactor according to claim 4, wherein said height control means are springs.
8. An inductively coupled reactor according to claim 1 or 4, wherein the inductively coupled plasma source further comprises: the first gas inlet channel penetrates through the top wall of the first reaction medium chamber, and the first gas inlet channel is suitable for introducing etching gas for etching the wafer into the first reaction medium chamber; and the second gas inlet channel is positioned at the top of the second reaction medium chamber and is suitable for introducing etching gas for etching the wafer into the second reaction medium chamber.
9. The inductive coupling reactor of claim 1, wherein said lower rf antenna has a first antenna terminal and a second antenna terminal, and said upper rf antenna has a third antenna terminal and a fourth antenna terminal; the first antenna terminal is suitable for feeding in a first radio frequency, the third antenna terminal is suitable for feeding in a second radio frequency, and the first radio frequency and the second radio frequency are adjustable in size.
10. The inductively coupled reactor of claim 9, wherein the inductively coupled plasma source further comprises: a radio frequency source; one end of the radio frequency matcher is connected with the radio frequency source; one end of the first power divider is connected with the other end of the radio frequency matcher, and the other end of the first power divider is connected with the first antenna terminal; one end of the second power divider is connected with the other end of the radio frequency matcher, and the other end of the second power divider is connected with the third antenna terminal; one end of the first voltage balance capacitor is connected with the second antenna terminal, and the other end of the first voltage balance capacitor is grounded; and one end of the second voltage balance capacitor is connected with the fourth antenna terminal, and the other end of the second voltage balance capacitor is grounded.
11. The inductive coupling reactor of claim 1, further comprising: and the wafer clamping platform is positioned in the reaction cavity body and is positioned below the first reaction medium chamber.
12. The inductive coupling reactor of claim 1, further comprising: the radio frequency isolation ring is positioned on the side part of the wafer clamping platform; and the plasma confinement ring is positioned outside the radio frequency isolation ring.
13. The inductive coupling reactor of claim 1, further comprising: the first shielding cover is positioned outside the first reaction medium chamber and the lower radio-frequency antenna and used for carrying out radio-frequency shielding on the first reaction medium chamber and the lower radio-frequency antenna; and the second shielding cover is positioned outside the second reaction medium chamber and the upper radio frequency antenna and is used for carrying out radio frequency shielding on the second reaction medium chamber and the upper radio frequency antenna.
14. The inductive coupling reactor of claim 13, further comprising: a first cooling device located on top of the first shield, the first cooling device for cooling the lower rf antenna and the first reaction medium chamber; a second cooling device located on top of the second shield, the second cooling device being configured to cool the upper RF antenna and the second reaction medium chamber.
15. A method of operating an inductively coupled reactor, using the inductively coupled reactor of any one of claims 1-14, comprising:
placing a wafer in the reaction chamber body;
adjusting the radio frequency power fed by the upper radio frequency antenna and the radio frequency power fed by the lower radio frequency antenna;
after the radio frequency power fed by the upper radio frequency antenna and the radio frequency power fed by the lower radio frequency antenna are adjusted, the lower radio frequency antenna generates plasma inside the first reaction medium chamber, and the upper radio frequency antenna generates plasma inside the second reaction medium chamber.
16. The method of claim 15, wherein said inductively coupled plasma source further comprises: a height control member located between the carrier and the top surface of the first reaction medium chamber;
the working method further comprises the following steps: the height control means is used to control the position of the first reaction medium chamber relative to the second reaction medium chamber.
17. The method of claim 15 or 16, wherein said inductively coupled plasma source further comprises: the first gas inlet channel penetrates through the top wall of the first reaction medium chamber, and the first gas inlet channel is suitable for introducing etching gas for etching the wafer into the first reaction medium chamber; the second gas inlet channel is positioned at the top of the second reaction medium chamber and is suitable for introducing etching gas for etching the wafer into the second reaction medium chamber;
the working method further comprises the following steps: the kind and flow rate of gas in the first intake passage and the kind and flow rate of gas in the second intake passage are adjusted.
18. The method of claim 15, wherein said inductively coupled plasma source further comprises: a radio frequency source; one end of the radio frequency matcher is connected with the radio frequency source; one end of the first power divider is connected with the other end of the radio frequency matcher, and the other end of the first power divider is connected with the first antenna terminal; one end of the second power divider is connected with the other end of the radio frequency matcher, and the other end of the second power divider is connected with the third antenna terminal; one end of the first voltage balance capacitor is connected with the second antenna terminal, and the other end of the first voltage balance capacitor is grounded; one end of the second voltage balance capacitor is connected with the fourth antenna terminal, and the other end of the second voltage balance capacitor is grounded;
adjusting the rf power fed by the upper rf antenna and the rf power fed by the lower rf antenna, including: and adjusting the radio frequency power fed in by the lower radio frequency antenna by adopting a first power divider, and adjusting the radio frequency power fed in by the upper radio frequency antenna by adopting a second power divider.
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