CN115537743A

CN115537743A - Film forming apparatus, film forming method, and method for manufacturing electronic device

Info

Publication number: CN115537743A
Application number: CN202210659246.4A
Authority: CN
Inventors: 岩崎达哉
Original assignee: Canon Tokki Corp
Current assignee: Canon Tokki Corp
Priority date: 2021-06-14
Filing date: 2022-06-13
Publication date: 2022-12-30
Also published as: JP2022190382A; KR20220167771A; JP7344929B2

Abstract

The present invention relates to a film forming apparatus which can continuously and stably form a film for a long time with a simple structure and thus has excellent productivity. According to the film forming device (1), a cylindrical target (30) and an atmosphere box (32) which supports the target (30) in a chamber (2) and is provided with a facing surface (320) facing to the upward direction of the target (30) in the vertical direction move between a facing area (A) facing to the upward direction of the substrate (10) in the vertical direction and a non-facing area (B) not facing to the substrate (10) in the vertical direction, and the direction of the magnetic field formed by a magnetic field forming mechanism (4) can be changed, wherein when the target (30) and the atmosphere box (32) are in the facing area (A), the magnetic field forming mechanism (4) is positioned at a film forming position for forming a magnetic field between the target (30) and the substrate (10), and when the target (30) and the atmosphere box (32) are in the non-facing area (B), the magnetic field forming mechanism (4) is positioned at a non-film forming position for forming a magnetic field between the facing surface (320) of the target (30) and the atmosphere box (32).

Description

Film forming apparatus, film forming method, and method for manufacturing electronic device

Technical Field

The invention relates to a film forming apparatus, a film forming method, and a method for manufacturing an electronic device.

Background

A sputtering film deposition apparatus is known which is configured to perform film deposition by relatively moving a substrate as a film deposition object and a material source (target). In particular, in a film deposition apparatus in which a target is slid, a structure in which the target is moved between an opposing region that faces a substrate and a non-opposing region that does not face the substrate may be employed (patent document 1). In the case of rotating the cathode, it is preferable to control the consumption so that the consumption is uniform in the circumferential direction of the target from the viewpoints of stability of film formation and management of consumption of the target material. That is, it is preferable that after the material is discharged from the target once, control is performed so as to rotate the target continuously without releasing the application of the voltage until the material is used. Therefore, in the case of a production apparatus for continuously forming a film on a plurality of substrates, the target may be kept in a standby state in a non-opposing region while maintaining a state in which a film forming material is discharged (a state in which voltage application to a cathode unit and rotation of the target are maintained), and during this period, replacement of the substrate or the like may be performed.

Here, the sputtered material adheres to the inner surface of the chamber while the target stands by in the non-opposing area. The sputtering material adhering to the inner surfaces of the chamber, particularly the top and side surfaces of the chamber, may fall off the wall surface. As a result, there is also a possibility that particles are generated in the non-film formation region due to the discharged sputtering material or the degree of vacuum in the chamber is deteriorated. Accordingly, it is difficult to continuously operate the apparatus for a long period of time, and maintenance of the apparatus becomes necessary.

Documents of the prior art

Patent literature

Patent document 1: japanese patent laid-open No. 2020-056054.

Disclosure of Invention

Problems to be solved by the invention

The purpose of the present invention is to provide a film forming apparatus which can continuously and stably form a film for a long period of time and has excellent productivity.

Means for solving the problems

In order to solve the above problem, a film forming apparatus of the present invention includes:

a chamber;

a cylindrical target disposed within the chamber;

an atmosphere box disposed in the chamber, having a surface facing the target in an upward direction in the vertical direction, and having an interior kept at atmospheric pressure;

a moving mechanism that moves the target and the atmospheric tank between a facing region where the target faces the film formation object in an upward direction in a vertical direction and a non-facing region where the target does not face the film formation object in an upward direction in the vertical direction;

a magnetic field forming mechanism which is provided inside the target and forms a magnetic field for sputtering on a surface side of the target; and

a control mechanism that controls a position of the magnetic field forming mechanism,

the film forming apparatus is configured to form a film on the object to be film-formed with the material ejected from the target,

the control mechanism is used for controlling the speed of the motor,

controlling a position of the magnetic field forming mechanism so that the magnetic field is formed between the target and the object to be film-formed when the target is in the opposing region,

the control mechanism is used for controlling the speed of the motor,

controlling a position of the magnetic field forming mechanism so that the magnetic field is formed between the target and the opposing surface of the atmospheric tank when the target is in the non-opposing region.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the apparatus of the present invention, stable film formation can be continuously performed for a long time, despite the simplicity.

Drawings

Fig. 1 is a schematic configuration diagram of a sputtering apparatus according to embodiment 1 of the present invention.

Fig. 2 is a schematic configuration diagram of a sputtering apparatus according to embodiment 1 of the present invention.

Fig. 3 is a schematic configuration diagram of a cathode unit according to embodiment 1 of the present invention.

Fig. 4 is a block diagram showing a control structure of a sputtering apparatus according to an embodiment of the present invention.

Fig. 5 is a schematic configuration diagram of a sputtering apparatus according to embodiment 2 of the present invention.

Fig. 6 is a schematic configuration diagram of a sputtering apparatus according to a modification of embodiment 2 of the present invention.

Fig. 7 is a diagram illustrating a method of manufacturing an electronic device.

Detailed Description

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. However, the following description is merely exemplary in nature of preferred embodiments of the present invention, and the scope of the present invention is not limited to these embodiments. In the following description, the scope of the present invention is not limited to the hardware configuration and the software configuration of the apparatus, the process flow, the manufacturing conditions, the dimensions, the materials, the shapes, and the like unless otherwise specified.

(example 1)

< film Forming apparatus >

A film deposition apparatus according to example 1 of the present invention will be described with reference to fig. 1 to 4. The film deposition apparatus according to the present embodiment is a magnetron sputtering apparatus in which a magnet unit is disposed inside a cylindrical target. The film forming apparatus according to the present embodiment is used for depositing and forming a thin film on a substrate (including a member in which a laminate is formed on a substrate) in the production of various electronic devices such as a semiconductor device, a magnetic device, and an electronic component, or an optical component. More specifically, the film formation apparatus according to the present embodiment is preferably used in the production of electronic devices such as light-emitting elements, photoelectric conversion elements, and touch panels. Among these, the film formation apparatus according to the present embodiment can be particularly preferably applied to the production of an organic light emitting element such as an organic EL (electroluminescence) element or an organic photoelectric conversion element such as an organic thin film solar cell. In addition, the electronic device in the present invention also includes a display device (e.g., an organic EL display device) or a lighting device (e.g., an organic EL lighting device) equipped with a light emitting element, a sensor (e.g., an organic CMOS image sensor) equipped with a photoelectric conversion element. The film formation apparatus according to the present embodiment can be used as a part of a film formation system including a vapor deposition apparatus and the like.

Fig. 1 (a) and 1 (b) are schematic diagrams showing a schematic configuration of the film formation apparatus according to the present embodiment, and show a schematic configuration when the entire film formation apparatus is viewed in cross section (a cross section along the movement direction (Y-axis direction) of the target). Fig. 1 (a) shows a case where the target is located in an opposing region to the substrate, and fig. 1 (b) shows a case where the target is located in a non-opposing region not to the substrate.

Fig. 2 (a), 2 (b), and 2 (c) are schematic diagrams showing a schematic configuration of the film formation apparatus according to the present embodiment. Fig. 2 (a) shows a schematic configuration of the entire film deposition apparatus as viewed in cross section (cross section taken along a direction perpendicular to the moving direction of the target), and corresponds to a view from the CC direction in fig. 2 (b) and a view from the DD direction in fig. 2 (c). Fig. 2b is a schematic cross-sectional view along the moving direction (Y-axis direction) of the target showing the schematic configuration of the magnet unit. Fig. 2 (c) is a schematic diagram schematically showing a plan view configuration of the magnet unit.

Fig. 3 is a schematic configuration diagram of a cathode unit according to example 1 of the present invention, showing a schematic configuration in a case where the cathode unit is viewed from a cross section (a cross section along a direction perpendicular to a moving direction (Y-axis direction) of a target).

As shown in fig. 1, a sputtering apparatus (film forming apparatus) 1 according to the present embodiment is equipped with a sputtering chamber (film forming chamber) 2 as a chamber and a cathode unit 3 arranged inside the sputtering chamber 2. Here, the upper side in fig. 1 corresponds to the upper side in the vertical direction when the sputtering apparatus 1 is used, and the lower side in fig. 1 corresponds to the lower side in the vertical direction when the sputtering apparatus 1 is used.

The substrate 10 as a target of film formation processing is carried into and out of the sputtering chamber 2 through a gate not shown in the figure. An exhaust device 17 including a cryopump, a TMP (turbo molecular pump), or the like and a gas supply source 18 for supplying a sputtering gas into the chamber are connected to the sputtering chamber 2, respectively. The sputtering chamber 2 is configured to be capable of forming the inside (V) in a low pressure state (normally, a state close to vacuum).

The cathode unit 3 is constituted by a plurality of devices or components including a magnet unit 4, a target 30, and the like, which will be described later, a part of which is disposed outside the sputtering chamber 2, exposed to the atmosphere (a).

The sputtering apparatus 1 according to the present embodiment is equipped with a drive mechanism 12 that moves the cathode unit 3 inside the sputtering chamber 2. The cathode unit 3 is movable by the drive mechanism 12 between a film formation region (facing region) a, which is a region at a position facing the substrate 10 when forming a film on the substrate 10 as a film formation object, and a film formation standby region (non-facing region) B, which is a region at a position not facing the substrate 10 and not forming a film. That is, in the present embodiment, the driving mechanism 12 is a moving mechanism that moves the film formation source relative to the object to be film-formed between the film formation standby area B and the film formation area a or within the film formation area a. The cathode unit 3 is opposed to the substrate 10 in the vertical direction in the film formation region a as an opposed region, and is not opposed to the substrate 10 in the vertical direction in the film formation standby region B as a non-opposed region. The film formation standby area B is located at two positions (film formation standby areas B1 and B2) on the upstream side and the downstream side in the moving direction of the cathode unit 3 with respect to the film formation area a.

The movable table 32 is supported movably in a direction parallel to the film formation surface 11 of the substrate 10 (here, a horizontal direction) along the pair of guide rails 23 via a conveyance guide such as a linear bearing. In fig. 1, when the direction parallel to the guide rail 23 is the Y axis, the vertical direction is the Z axis, and the direction perpendicular to the guide rail 23 on the horizontal plane is the X axis, the cathode unit 3 moves in the Y axis direction parallel to the substrate 10, that is, on the XY plane, while rotating about the rotation axis in a state where the rotation axis faces the X axis direction.

Although not particularly shown in the drawings, the drive mechanism 12 may employ various known linear motion mechanisms such as a screw feed mechanism using a ball screw or the like that converts the rotational motion of a rotary motor into linear motion, and a linear motor.

The movable stage 32 is an atmospheric tank whose inside is kept at atmospheric pressure, and one end of an atmospheric arm mechanism 60 constituted by a link mechanism that follows a linear motion is rotatably connected to the movable stage 32. The atmospheric arm mechanism 60 includes a plurality of hollow arms whose inside is kept at atmospheric pressure, and these arms are connected to each other in a freely rotatable manner at a joint portion (shaft portion). The other end of the atmospheric arm mechanism 60 is rotatably connected to a mounting portion of the bottom wall of the chamber 2. Inside the atmospheric arm mechanism 60, cables connected to the motors of the driving mechanism 12 and the target driving device 13, signal cables for control signals, pipes through which cooling water flows, and the like are housed.

In one of the film formation standby areas B1 and B2 which are two areas sandwiching the film formation area a, the first deposition preventing plate 241, which is an opposing member opposing the cathode unit 3 standing by in the film formation standby area B1, is fixed to the sputtering chamber 2. Similarly, in the other film formation standby area B2, the first adhesion preventing plate 242, which is an opposing member opposing the cathode unit 3 standing by in the film formation standby area B2, is fixed to the sputtering chamber 2. These first

adhesion preventing plates

241 and 242 extend in the horizontal (XY plane) direction so as to face the cathode unit 3 in the vertical direction at a predetermined interval. Further, a pair of second

adhesion preventing plates

243 and 244 as shielding members fixed to and erected on the moving stage 32 are provided so as to sandwich the cathode unit 3 in front and rear of the moving direction of the cathode unit 3. The second

adhesion preventing plates

243 and 244 move together with the cathode unit 3 relative to the substrate 10 to the extent of the height of the top of the target 30 of the cathode unit 3.

As shown in fig. 2, the substrate 10 is placed (held) on a substrate holder 20 in the sputtering chamber 2, and is conveyed at a constant speed along a conveyance guide 22 extending at a predetermined relative distance from (the movement path of) the cathode unit 3. During film formation, the substrate 10 may be in a stationary state or may be conveyed at a constant speed. The substrate holder 20 is provided with an opening 21 for opening a film formation surface (a surface to be processed) 11 of the substrate 10, and a film formation process is performed on the film formation surface 11 through the opening 21.

As shown in fig. 1 and 2, the sputtering chamber 2 is provided with a transport path for the substrate 10 at the upper side and a cathode unit 3 at the lower side. The sputtering chamber 2 is adjusted to a pressure suitable for the sputtering process (for example, 2 × 10Pa to 2 × 10 Pa) by the exhaust unit 17, more specifically, by the opening degree of a valve connected to the exhaust unit 17 ^-2 pa) as a vacuum atmosphere. In the present specification, the term "vacuum" refers to a state in which the vacuum is filled with a gas having a pressure lower than atmospheric pressure. Further, the sputtering gas is controlled in flow rate from the gas supply source 18 in the sputtering chamber 2And making and supplying. Thereby, a sputtering atmosphere is formed inside the sputtering chamber 2. As the sputtering gas, for example, a rare gas such as Ar, kr, or Xe, or a reactive gas for film formation is used.

The cathode unit 3 is equipped with a target 30, a magnet unit 4, and a case 31. The target 30 is composed of a material source 301 formed in a cylindrical shape and a backing tube 302 as a cathode electrode for supporting the material source 301. Here, although the description is given of the structure in which the material source 301 is supported on the outer peripheral surface of the liner 302, the liner 302 itself may be used as the material source and used as the target 30. The target 30 is disposed at a position spaced apart from the transport path of the substrate 10 by a predetermined distance, parallel to the film formation surface 11 of the substrate 10, and with a central axis (or a generatrix) perpendicular to the transport direction of the substrate 10. The inner peripheral surface of the target 30 faces the outer surface of the case 31 as a cathode electrode. The magnet unit 4 is disposed in a hollow portion inside the target 30 (housing 31). The power supply 15 is connected to the backing tube 302 and the sputtering chamber 2 is grounded. When a voltage is applied from the power supply 15, the liner 302 serves as a cathode (cathode) and the wall of the sputtering chamber 2 serves as an anode (anode).

Examples of the material of the target 30 include metal targets such as Cu, al, ti, mo, cr, ag, au, and Ni, and alloy materials thereof. By film formation in an inert gas, a metal film made of these materials can be formed. In addition, a reactive gas (O) is added as an atmosphere at the time of film formation using a metal target such as Si, ti, cr, al, ta, or the like ₂ 、N ₂ 、H ₂ O, etc.) thereby to form SiO ₂ 、Ta ₂ O ₅ 、Al ₂ O ₃ And the like are formed into films. The target 30 is a cylindrical target, but the term "cylindrical" herein does not mean only a mathematically strict cylindrical shape, but also includes a shape in which a generatrix is not a straight line but a curved line, or a shape in which a cross section perpendicular to a central axis is not a mathematically strict "circle". That is, the target 30 in the present invention may be cylindrical as long as it is rotatable about the central axis.

As shown in fig. 2 (b) and 2 (c), the magnet unit 4 includes a yoke 40, a center magnet 41 as a first magnet, and an outer peripheral magnet 42 as a second magnet. The yoke 40 is a magnetic member having a longitudinally long shape with a longitudinal direction being a direction perpendicular to a relative movement direction with respect to the substrate 10. A center magnet 41 extending in the longitudinal direction is provided at a central portion of the upper surface of the yoke 40. An outer circumferential magnet 42 formed in a ring shape so as to surround the outer circumference of the center magnet 41 is provided on the upper surface of the yoke 40. The center magnet 41 and the outer circumference magnet 42 are provided so that the magnetic poles on the side (facing surface) facing the inner circumferential surface of the target 30 have opposite polarities. In the present embodiment, the center magnet 41 has an N-pole as a first pole, and the outer magnet 42 has an S-pole as a second pole. The magnet unit 4 is disposed inside the target 30, and forms a ring-shaped leakage magnetic field extending in the longitudinal direction of the target 30.

The plasma region P is generated in the vicinity of the outer peripheral surface of the target 30 by the formation of the sputtering atmosphere, the application of a voltage from the power supply 15 to the backing tube 302 (target 30) as a cathode electrode, and the formation of a predetermined magnetic field on the surface side of the target 30 by the magnet unit 4 as magnetic field forming means. Target particles (target constituent atoms) are discharged from the outer peripheral surface of the target 30 by collision of the sputtering gas ions generated in the plasma region P with the target 30. The target particles discharged from the target 30 fly toward the substrate 10 and are deposited, whereby a thin film formed of the target particles is formed on the film formation surface 11 of the substrate 10.

As shown in fig. 2 (a), the end blocks 33 and the support blocks 34 support both ends of the target 30 and the magnet unit 4 in the central axis direction of the cylindrical target 30. The target 30 and the magnet unit 4 are supported rotatably about respective central axes with respect to the sputtering chamber 2. In the film formation, the sputtering apparatus 1 rotates only the target 30 while keeping the magnet unit 4 stationary (dotted arrow in fig. 1).

Fig. 3 is a schematic configuration diagram of the cathode unit 3 according to example 1 of the present invention, and shows a schematic configuration when the cathode unit 3 is viewed in cross section. In fig. 3, a cross-sectional view of the cathode unit 3 cut along a plane parallel to the rotation center axis of the target is schematically shown, and the positions of the cut planes are not necessarily the same plane in order to show a characteristic configuration, from the viewpoint of convenience of explanation.

The cathode unit 3 is provided with an end block 33 and a support block 34, the end block 33 having a function of supporting and rotating one end side of the target 30, and the support block 34 having a function of rotatably supporting the other end side of the target 30. The cathode unit 3 includes a moving table 32 having a support end block 33 and a support block 34, a first motor 35 for rotating the target 30, and a second motor 45 for rotating the magnet unit 4 provided inside the target 30. Further, the target 30 in the cathode unit 3 is disposed inside (V) the sputtering chamber 2 (not shown in fig. 3), and the inside of the endblock 33 and the first motor 35, the second motor 45, and the like are exposed to the atmosphere (a).

A support block side end member 304 is provided on the other end side of the target 30, and the support block side end member 304 is fixed to the target 30 and is rotatably supported by the support block 34.

The magnet unit 4 is supported inside a cylindrical case 31. The housing 31 is configured such that both ends thereof are substantially closed. Further, a pipe 314 is provided inside the casing 31, and the pipe 314 forms a part of a flow path of a cooling medium for cooling the target 30.

The support block side end member 304 is provided with a shaft portion 304a, and the shaft portion 304a is inserted into a through hole 34b formed in the support block 34. By providing the bearing B between the shaft portion 304a and the through hole 34B, the support block side end member 304 is rotatable with respect to the support block 34. The support block side end member 304 is provided with a bearing hole 304b for allowing the support block side end member 304 to freely rotate with respect to the housing 31 (magnet unit 4). The shaft portion 310a provided on the other end side of the housing 31 is inserted into the bearing hole 304b. By providing the bearing B in the annular gap between the shaft portion 310a and the bearing hole 304B, the support block side end member 304 is rotatable with respect to the magnet unit 4. Further, a sealing device S is provided in an annular gap between the shaft portion 310a and the bearing hole 304b. The support block side end member 304 and the target 30 are fixed by a fastening member (not shown) such as a jig. Further, a gasket (not shown) for sealing an annular gap between the support block side end member 304 and the target 30 is provided.

In the cathode unit 3 configured as described above, the cylindrical space formed between the target 30 (liner 302) and the magnet unit 4 (housing 31) serves as an annular first coolant flow path R1 through which a coolant for cooling the target 30 flows. The inner space of the pipe 314 provided inside the housing 31 serves as a second coolant flow path R2 through which the coolant flows.

The end block 33 includes an end block case 330 fixed to the mobile station 32, a shaft member 311 provided in the end block case 330, and an end block side end member 303 provided rotatably with respect to the shaft member 311. Further, a pair of bearings B is provided between the shaft-like member 311 and the end-block-side end member 303. Thereby, the end-block-side end member 303 is rotatable relative to the shaft-like member 311. Further, a sealing device S for sealing an annular gap between the shaft-like member 311 and the end-block-side end member 303 is provided. Further, the housing 31 and the shaft-like member 311 are connected. Accordingly, the housing 31 (magnet unit 4) does not rotate with respect to the shaft-like member 311.

The end-block-side end member 303 and the liner 302 are fixed by a fastening member (not shown) such as a jig. Further, a gasket (not shown) that seals an annular gap between the block-side end member 303 and the liner 302 is provided. Further, a bearing B and a sealing device S are also provided between the end block case 330 and the end block-side end member 303. Thus, the end-block-side end member 303 is rotatable with respect to the end-block housing 330, and an annular gap between the end-block housing 330 and the end-block-side end member 303 is sealed. Further, a gasket (not shown) is also provided between the end block case 330 and the mobile station 32. Thus, although the interior of the endblock housing 330 is exposed to the atmosphere, the space in which the target 30 is disposed is maintained in a low-pressure state (generally, a state close to a vacuum).

The end-block-side end member 303 is configured to be rotated by the first motor 35. The target drive mechanism (first drive mechanism) 13 that rotates the endblock-side end member 303 is provided with a first belt 351, and the first belt 351 is wound between a pulley provided on the rotating shaft of the first motor 35 and a pulley provided on the endblock-side end member 303. According to this drive mechanism, the rotation of the first motor 35 is transmitted to the end-block-side end member 303 via the first belt 351, and the end-block-side end member 303 rotates. The target 30 fixed to the endblock-side end member 303 also rotates together with the support-block-side end member 304.

Further, a first flow path 312 and a second flow path 313 are provided inside the shaft-like member 311, the first flow path 312 is connected to a first coolant flow path R1 provided between the liner 302 (target 30) and the casing 31, and the second flow path 313 is connected to a second coolant flow path R2 provided inside the casing 31. Further, a rotary joint 331 is provided inside the end block case 330, and the rotary joint 331 rotatably supports the shaft-like member 311, and supplies and discharges the coolant to and from the flow passages of the above-described respective portions. The rotary joint 331 is formed of a cylindrical member disposed concentrically with the shaft-like member 311, and a plurality of bearings B and sealing devices S are disposed in an annular gap between the rotary joint 331 and the shaft-like member 311. In addition, the supply pipe 333 and the discharge pipe 334 are connected to the rotary joint 331. The supply pipe 333 is connected to the inside of the first flow path 312, and the discharge pipe 334 is connected to the inside of the second flow path 313.

The shaft-like member 311 is configured to be rotated by the second motor 45. The magnet unit driving mechanism (second driving mechanism) 14 for rotating the shaft-like member 311 is provided with a second belt 451, and the second belt 451 is wound between a pulley provided on the rotation shaft of the second motor 45 and a pulley provided on the shaft-like member 311. With this drive mechanism, the rotation of the second motor 45 is transmitted to the shaft-like member 311 via the second belt 451, and the shaft-like member 311 rotates. The housing 31 (magnet unit 4) fixed to the shaft-like member 311 also rotates.

In addition, the plurality of sealing devices S provided in each of the above-described portions each have a function capable of allowing two members provided on the inner side and the outer side in the radial direction of the sealing device S to rotate and sealing an annular gap between the two members. In addition, in the sputtering apparatus 1, in order to prevent the leakage of the cooling liquid, gaskets (not shown in the figure) are respectively provided between two members fixed to each other at a plurality of places.

The magnet unit 4 can be adjusted to a predetermined angle with respect to the arrangement direction of the substrate 10 before the start of film formation, and the direction can be kept constant (kept stationary) during film formation. In this case, during film formation, the magnet unit 4 (housing 31) is held stationary with respect to the end block 33 and the support block 34, and is rotated relative to the target 30 rotated by driving of the first motor 35, thereby holding the magnet unit in a stationary state with respect to the sputtering chamber 2. The driving mechanism shown here is an example, and other driving mechanisms known in the past may be used. If necessary, the magnet unit 4 (housing 31) may be rotated with respect to the end block 33 and the support block 34 in the film forming step. In this case, the magnet unit 4 (the housing 31) rotates relative to the sputtering chamber 2, and the discharge direction of the material also rotates.

As described above, the target 30 is configured to rotate relative to the magnet unit 4 during film formation. Since a portion (erosion region due to erosion) which is removed by sputtering is locally formed on the surface of the target 30 in the circumferential direction, the cutting condition of the target surface is made uniform in the circumferential direction by rotating the target 30, and consumption of a small amount of unnecessary target material can be reduced. In the present embodiment, the target 30 is controlled to rotate at a constant speed of 10 to 30rpm (revolutions per minute).

The movable stage 32 is provided with a third coolant flow field R3 on the outer wall 321. The supply of the coolant to the third coolant flow path R3 or the supply pipe 333 is performed by a coolant supply unit 16 equipped with a coolant tank, a pump, or the like. Fig. 3 shows only a part of the third coolant flow field R3. The third coolant flow field R3 is disposed, for example, so as to extend along the outer wall 321 of the movable stage 32, and is configured to circulate a coolant (e.g., cooling water). The cooling medium is not limited to a coolant such as cooling water, and may be a fluid such as air.

Further, inside the movable table 32 as the atmospheric tank, members such as gears and electric wiring constituting the driving mechanism 12 are disposed in addition to the first motor 35, the second motor 45, the supply pipe 333, and the discharge pipe 334 described above. These various members are connected to devices and the like disposed outside the chamber 2 via the inside of the atmospheric arm mechanism 60.

< control Structure of film Forming apparatus >

As shown in fig. 4, various configurations of the sputtering chamber 2 are controlled by a control unit 5 including a CPU, a memory, and the like. The control section 5 includes: a substrate conveyance control unit 51, a moving stage control unit 52, a target unit 53, a magnet unit control unit 54, a voltage application control unit 55, a cooling control unit 56, and a sputtering atmosphere control unit 57. The sputtering apparatus 1 according to the present embodiment is provided with an operation panel, not shown, which serves as an interface for an operator to control the sputtering apparatus 1. The control unit 5 controls various configurations of the sputtering chamber 2 in accordance with the instruction contents from the operator input to the operation panel.

The substrate conveyance control section 51 controls a substrate conveyance mechanism, not shown, that performs conveyance of the substrate 10 along the conveyance guide 22 in the sputtering chamber 2. The moving stage controller 52 controls the driving mechanism 12 to move the moving stage 32 relative to the substrate 10 between the film formation standby area B and the film formation area a or within the film formation area a. The target control section 53 controls the target driving device 13, and the target driving device 13 includes the first motor 35 and the first belt 351 as a driving mechanism for rotating the target 30, and controls the rotating operation of the target 30 at the time of film formation or the like, for example. The magnet unit control unit 54 controls the magnet unit driving device 14 including the second motor 45, the second belt 451, and the like as a driving mechanism for rotating the magnet unit 4, and can perform, for example, angle adjustment of the magnet unit 4 before starting film formation or during film formation. The voltage application control section 55 controls the voltage application from the power supply 15 to the target 31 during film formation. The cooling control unit 56 controls the coolant supply unit 16 to control the supply of coolant to the coolant flow paths R1, R2, and R3. The sputtering atmosphere controller 57 controls the gas exhaust device 17 and the gas supply source 18 for forming a sputtering atmosphere in the sputtering chamber 2.

< film Forming action >

Next, a film formation method by the sputtering apparatus 1 according to the present embodiment will be described. First, the cathode unit 3 is caused to stand by in the film formation standby region B1 (left side in fig. 1). In the film formation standby region B1, a bias potential is applied to the cathode (backing tube 302) while rotating the driving target 30 before the film formation step (main sputtering step). Thereby, each target 30 is rotated to discharge sputtering particles, and preliminary sputtering is performed (preparation step). Preferably, the pre-sputtering is performed until the generation of plasma formed around each target 30 is stabilized.

In the pre-sputtering step, among the sputtering particles discharged from the targets 30, the sputtering particles flying toward the ceiling wall of the sputtering chamber 2 are mainly shielded by the first deposition preventing plate 241 on the left side in fig. 1, and the sputtering particles flying in the moving direction toward the film formation region a are mainly shielded by the second deposition preventing plate 244 on the right side in the figure.

After sputtering for a predetermined time, the process proceeds to the main sputtering step. When the sputtering process is shifted to the main sputtering process, the driving mechanism 12 is driven while the target 30 of the cathode unit 3 is rotated and sputtered, and the cathode unit 3 is moved into the film formation region a. Then, in the film formation region a, the cathode unit 3 is moved at a predetermined speed with respect to the substrate 10. During this period, plasma is generated in a concentrated manner near the surface of the target 30 facing the substrate 10 (between the substrate 10 and the target 30) by the magnet unit 4, and gas ions in a positive ion state in the plasma sputter the target 30, so that scattered sputter particles are deposited on the substrate 10. As the hardware unit 3 moves, sputtered particles are deposited in order from the upstream side to the downstream side in the moving direction of the cathode unit 3, thereby forming a film. When the cathode unit 3 passes through the film formation area a, the cathode unit enters the film formation standby area B2 on the opposite side (right side in fig. 1), and the driving mechanism 12 is stopped. Further, if necessary, the film may be formed by reciprocating the film.

After the film formation on the substrate 10 is completed, the substrate 10 having been formed is carried out, and a new substrate 10 to be formed is carried in. The standby period of the cathode unit 3 is set during the period of carrying in and out the substrate 10. In this embodiment, after the cathode unit 3 enters the film formation standby region B2, the operation of discharging the sputtering material from the cathode unit 3 may be stopped, and the process may be continued until the film formation process for the next substrate 10. In the case of the cylindrical target 30, it is preferable to control the consumption so that the consumption is uniform in the circumferential direction of the target 30 from the viewpoints of stability of film formation, consumption management of the target material, and the like. That is, after the sputtering material is discharged once, the target is continuously rotated without removing the voltage application until the material runs out. Therefore, when continuously forming films on a plurality of substrates, the sputtering material may be discharged (while the voltage applied to the casing 31 of the cathode unit 3 and the target 30 are rotated) and the target 30 may be moved to the non-opposing region, during which the substrate 10 may be replaced.

< Standby posture of cathode Unit >

In the present embodiment, when the target 30 is moved to the non-facing region B, the direction of the magnet unit 4 is changed and controlled so that the discharge direction of the sputtering material is directed toward the moving stage 32 which is an atmospheric tank. That is, while the cathode unit 3 is standing by in the non-facing region B, the discharge direction of the sputtering material is directed downward, and the sputtering material is controlled to adhere mainly to the upper surface of the moving stage 32. Thus, most of the sputtered material discharged during standby adheres to the upper surface 320 of the movable stage 32, and the upper surface 320 is an opposing surface of the movable stage 32 opposing to the target 30 in the upward direction in the vertical direction. This can relatively suppress the sputtered material discharged during standby from adhering to a downward surface or a lateral surface which is likely to fall after adhesion. Therefore, generation of particles and deterioration of the degree of vacuum in the generation chamber 2 due to the discharged sputtering material can be suppressed.

The rotation center (rotation axis) of the magnet unit 4 is coaxial with the rotation axis of the target 30 (i.e., the central axis of the cylindrical target 30). The magnet unit 4 can change the discharge direction of the sputtering material by changing the orientation in the hollow space inside the target 30 by rotation. The posture of the magnet unit 4 may be changed after the cathode unit 3 reaches the film formation waiting region B and stops moving, or may be changed while moving from the film formation region a to the film formation waiting region B.

In the magnet unit 4, at least the center magnet 41 as the first magnet is located on the side close to the main discharge direction of the sputtered material with respect to the rotation center in the hollow space inside the target 30. Therefore, when a magnetic field for sputtering is formed between the target 30 and the substrate 10, that is, during a film forming operation, the center magnet 41 is positioned substantially vertically above the hollow space inside the target 30. Since the magnet unit 4 of the present embodiment is configured such that the lower end surface of the yoke 40 coincides with the rotation center of the magnet unit 4 as shown in fig. 1 and the like, the entire magnet unit 4 is positioned substantially above the vertical direction in the hollow space inside the target 30 during the film forming operation. Various forms can be adopted as the form of the entire magnet unit 4, but at least the tip portion of the center magnet 41 having the N-pole of the first polarity is located above the rotation center during the film forming operation.

When a magnetic field for sputtering is formed between the target 30 and the movable stage 32, that is, in the standby posture, the center magnet 41 is positioned substantially below the vertical direction in the hollow space inside the target 30. In the case of the magnet unit 4 of the present embodiment, the entire magnet unit 4 is positioned substantially below the vertical direction in the hollow space inside the target 30. Various forms can be adopted as the form of the entire magnet unit 4, but at least the tip portion of the center magnet 41 having the N-pole as the first polarity is located below the rotation center in the standby posture.

The standby posture is not limited to a configuration in which the main discharge direction of the sputtering material is directed downward in the vertical direction. That is, various configurations can be adopted as long as generation of particles due to the discharged sputtering material and deterioration of the degree of vacuum in the generation chamber 2 do not occur. For example, depending on the width of the upper surface 320 of the moving stage 32, the main discharge direction of the sputtering material may be a direction obliquely downward having an angle with respect to the vertical direction. In the configuration of the present embodiment, the sputtered material may be discharged toward a corner between the upper surface 320 of the moving stage 32 and one of the second

adhesion preventing plates

243 and 244.

< transition from film formation position to standby position (non-film formation position) >

The reason why the target 30 and the magnet unit 4 are concentrically rotated is to make the relative position of the magnet unit 4 with respect to the target 30 constant regardless of the rotational phase of the target 30 and the rotational phase of the magnet unit 4.

For example, when the direction of the magnet unit is changed in the non-opposing area, the rotation direction of the magnet unit and the rotation direction of the target are the same, the rotation speed of the target may be controlled to be increased so that the relative speed (circumferential speed difference) between the two does not change due to the rotation of the magnet unit. When the rotation directions of the two are opposite to each other, the rotation speed of the target is controlled to be reduced or stopped while the magnet unit is rotated.

As shown in fig. 1 (b), the present embodiment is of the latter configuration, that is, a configuration in which the target 30 and the magnet unit 4 are rotated in opposite directions to each other. In fig. 1, the rotating direction of the target 30 is indicated by a broken-line arrow, and the rotating direction of the magnet unit 4 is indicated by a solid-line arrow. Accordingly, when the cathode unit 3 is shifted from the film formation posture to the standby posture, first, the rotation control of the target 30 is switched from the rotation control at the time of film formation to the rotation control for posture shift together with the start of posture change of the magnet unit 4. After the posture change (rotation) of the magnet unit 4 is completed, the rotation control of the target 30 is returned to the same rotation control as that at the time of film formation. During this posture shift, the relative rotation of the target 30 and the magnet unit 4 is maintained at a constant relative speed (circumferential speed difference).

In the transition from the standby posture to the film formation posture, the rotation of the target 30 and the rotation of the magnet unit 4 may be controlled in the same manner as described above.

< Cooling mechanism >

In the present embodiment, the third coolant flow field R3 is provided in the vicinity of the upper surface 320 of the outer wall 321 of the moving stage 32. That is, a mechanism for cooling the upper surface (opposing surface) 320 of the moving stage 32, which is the target to which the sputtering material discharged during standby is positively attached, is provided. When the temperature of the moving stage 32 is increased by the adhesion of the sputtering material, thermal expansion, thermal strain, or the like of the moving stage is caused, and there is a possibility that the film formation result is adversely affected. According to the present embodiment, the third coolant flow path R3 is provided, thereby suppressing the temperature of the movable stage 32 from increasing.

In the present embodiment, the first coolant flow path R1 and the second coolant flow path R2 for cooling the target 30 are separately provided with the third coolant flow path R3 for cooling the outer wall 321 (upper surface 320) of the movable stage 32, but both may be configured as a series of flow paths. The cooling system (coolant) is not limited to a coolant such as cooling water, and may be air-cooling system cooling in which air is blown as a cooling fluid. Alternatively, a heat radiation structure such as a fin may be provided on the inner surface of the outer wall 321.

Although the movable stage 32 as an atmosphere box is illustrated as an example of the shield member having the opposing surface opposing the target 30 in the upward direction in the vertical direction in the present embodiment, the configuration having the opposing surface is not limited to the movable stage 32.

(example 2)

A sputtering apparatus 1b according to embodiment 2 of the present invention is explained with reference to fig. 5. Fig. 5 (a) and 5 (b) are schematic diagrams showing a schematic configuration of the film formation apparatus according to the present embodiment, and show a schematic configuration (a cross section along the movement direction (Y-axis direction) of the target) when the entire film formation apparatus is viewed in cross section. Fig. 5 (a) shows a case where the target is located in an opposing region facing the substrate, and fig. 5 (b) shows a case where the target is located in a non-opposing region not facing the substrate.

Only the differences from example 1 in example 2 will be described below. The configuration of example 2 is the same as that of example 1, except for the fact that no particular description is made.

According to the sputtering apparatus 1B of the present embodiment, the pair of

cathode units

3A and 3B arranged in parallel with a predetermined gap therebetween in the moving direction are provided as the cathode units. The cathode unit 3A is provided with a target 30A and a magnet unit 4A, respectively, so as to be freely rotatable. The cathode unit 3B is provided with a target 30B and a magnet unit 4B, respectively, so as to be freely rotatable. Material sources made of the same material are mounted on the

targets

30A and 30B.

< Standby posture of cathode Unit >

As shown in fig. 1 (B), the standby posture of the pair of

cathode units

3A and 3B in the present embodiment is such that the discharge directions of the sputtered materials face each other. Namely, the standby posture is such that: the sputtering material discharged from the target of one cathode unit adheres to the target of the other cathode unit, and vice versa.

The sputtering material attached from one target to another can be used for sputtering by the other target, and likewise, the sputtering material attached from the other target to one target can be used for sputtering by the one target. Therefore, according to the present embodiment, generation of particles due to the discharged sputtering material or generation of deterioration of the degree of vacuum in the chamber 2 can be suppressed, and consumption of the target material during standby can be suppressed, and consumption of the target material for a long period of time and with high efficiency can be realized.

The standby posture in the present embodiment is a posture in which the distance between the first magnet unit 4A and the second magnet unit 4B is closest. Various forms can be adopted as the form of the entire magnet unit 4, but at least the tip portion having the N-pole of the first polarity in the center magnet 41 of the magnet unit 4A and the tip portion having the N-pole of the first polarity in the center magnet 41 of the magnet unit 4B are closer to each other in the standby posture than in the film formation posture.

The standby position is not limited to a configuration in which the main discharge direction of the sputtering material is oriented in a substantially horizontal direction toward the other magnet unit. That is, various configurations can be adopted as long as generation of particles due to the discharged sputtering material or deterioration of the degree of vacuum in the chamber 2 does not occur. For example, the main discharge direction of the sputtered material may be a direction obliquely downward at an angle with respect to the horizontal direction.

(modification example)

In the present embodiment, as a standby posture (non-film formation position) in which a position for forming a magnetic field is deviated from between a target and a substrate as a film formation object, a standby posture in which a magnetic field is formed between one target and the other target is exemplified, but the present invention is not limited thereto.

Fig. 6 (a) and 6 (b) are schematic diagrams showing a schematic configuration of a film formation apparatus according to a modification example of embodiment 2 of the present invention, and show a schematic configuration (a cross section along the moving direction (Y-axis direction) of a target) when the entire film formation apparatus is viewed in cross section. Fig. 6 (a) shows a case where the target is located in an opposing region facing the substrate, and fig. 6 (b) shows a case where the target is located in a non-opposing region not facing the substrate.

As shown in fig. 6, in the configuration of example 2, the standby posture of the pair of

cathode units

3A and 3B may be configured in the same manner as in example 1. That is, the structure may be such that: in the standby posture (non-film-forming position), each of the pair of

cathode units

3A and 3B forms a magnetic field for sputtering between the cathode unit and the upper surface (opposing surface) 320 of the movable stage 32 as a shielding member.

< other Structure >

The above embodiment merely shows an example of the structure of the present invention. The present invention is not limited to the configurations of the above-described embodiments, and various configurations can be adopted within the scope of the technical idea.

For example, a cylindrical target is shown as an example of the target, but the shape of the target is not limited to this, and the present invention can be suitably applied to a structure using a plate-shaped target, for example.

In this embodiment, a film formation apparatus having one target in a cathode unit (embodiment 1) and film formation apparatuses having two targets (embodiments 2 and 3) are shown as examples, but the present invention is also applicable to a film formation apparatus having three or more targets.

In the above-described embodiments, the description has been given on the assumption that the position of the cathode unit with respect to the substrate is moved between the facing region and the non-facing region, but the configuration of the film deposition apparatus is not limited to this. The position of the cathode unit may be fixed, and the substrate may be moved relative to the cathode unit. For example, the present invention is also suitably applicable to a film deposition apparatus having a structure in which a substrate transfer area is shielded from a cathode unit by a shutter at the time of substrate replacement. That is, in the film deposition apparatus having the above configuration, by setting the positive target of deposition of the sputtering material to a structure such as an atmospheric tank located vertically below the sputtering material during non-film deposition, it is possible to suppress generation of particles and deterioration of the degree of vacuum due to the material that does not contribute to film deposition.

With respect to the respective embodiments and the respective modifications described above, the respective structures may be combined with each other as long as possible.

< method for producing electronic device >

Next, a method for manufacturing an electronic device by using the film formation apparatus will be described. Here, as an example of the electronic device, a case of using an organic EL element in a display device such as an organic EL display device will be described as an example. In addition, the electronic device according to the present invention is not limited thereto, and may be a thin film solar cell or an organic CMOS image sensor. In this embodiment, there is a step of forming an organic film on the substrate 5. After the organic film is formed on the substrate 5, a step of forming a metal film or a metal oxide film by the above-described film forming method is provided. Next, a structure of the organic EL display device 600 obtained by such a process will be described.

Fig. 7 (a) is an overall view of the organic EL display device 600, and fig. 7 (b) shows a cross-sectional structure of one pixel. As shown in fig. 7 (a), a plurality of pixels 62 are arranged in a matrix in a display region 61 of an organic EL display device 600, and the pixels 62 include a plurality of light-emitting elements. Each of the light emitting elements has an organic layer sandwiched by a pair of electrodes. Here, the pixel is a minimum unit that can display a desired color in the display region 61. In the case of the organic EL display device of the present figure, the pixel 62 is constituted by a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the third light-emitting element 62B which display mutually different light emissions. The pixel 62 is often configured by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is not particularly limited as long as it is at least one color or more. Each light-emitting element may be configured by stacking a plurality of light-emitting layers.

Further, the pixel 62 may be configured by a plurality of light emitting elements that display the same light emission, and a plurality of different color conversion elements may be arranged in a pattern-like color filter corresponding to each light emitting element so that one pixel can display a desired color in the display region 61. For example, the pixel 62 may be formed by at least three white light emitting elements, and color filters in which red, green, and blue color conversion elements are arranged corresponding to the light emitting elements may be used. Alternatively, the pixel 62 may be configured by at least three blue light emitting elements, and color filters in which red, green, and colorless color conversion elements are arranged corresponding to the respective light emitting elements may be used. In the latter case, a Quantum Dot color filter (QD-CF) of Quantum Dot (QD) material is used as a material constituting the color filter, whereby the display color gamut can be expanded as compared with a general organic EL display device not using a Quantum Dot filter.

FIG. 7 (B) is a partial cross-sectional view taken along line A-B of FIG. 7 (a). The pixel 62 has an organic EL element provided with a first electrode (anode) 64, a hole transport layer 65, any one of

light emitting layers

66R, 66G, 66B, an electron transport layer 67, and a second electrode (cathode) 68 on the substrate 5. The hole transport layer 65, the

light emitting layers

66R, 66G, and 66B, and the electron transport layer 67 correspond to organic layers. In addition, in the present embodiment, the light emitting layer 66R is an organic EL layer emitting red light, the light emitting layer 66G is an organic EL layer emitting green light, and the light emitting layer 66B is an organic EL layer emitting blue light. As described above, although not shown, when a color filter or a quantum dot color filter is used, the color filter or the quantum dot color filter is disposed on the light emitting side of each light emitting layer, that is, on the upper or lower portion of fig. 7 (b).

The light-emitting

layers

66R, 66G, and 66B are patterned to correspond to light-emitting elements (also referred to as organic EL elements) that emit red light, green light, and blue light, respectively. In addition, the first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of

light emitting elements

62R, 62G, and 62B, or may be formed for each light emitting element. In addition, an insulating layer 69 is provided between the first electrodes 64 in order to prevent the first electrodes 64 and the second electrodes 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer P for protecting the organic EL element from moisture or oxygen is provided.

Next, an example of a method for manufacturing an organic EL display device as an electronic device will be specifically described. First, the substrate 5 on which the circuit (not shown) for driving the organic EL display device and the first electrode 64 are formed is prepared.

Next, a resin layer of acrylic resin, polyimide, or the like is formed on the substrate 5 on which the first electrodes 64 are formed by spin coating, and the resin layer is patterned by photolithography so as to form openings in portions where the first electrodes 64 are formed, thereby forming the insulating layer 69. The opening corresponds to a light-emitting region where the light-emitting element actually emits light.

Next, the substrate 5 on which the insulating layer 69 is patterned is carried into the first film forming apparatus, the substrate is held by the substrate holding means, and the hole transport layer 65 is formed as a common layer on the first electrode 64 in the display region. The hole transport layer 65 is formed by vacuum evaporation. In fact, since the hole transport layer 65 is formed to be larger in size than the display region 61, a high-definition mask is not required.

Subsequently, the substrate 5 on which the hole transport layer 65 has been formed is carried into the second film formation apparatus and held by the substrate holding means. Alignment between the substrate and the mask is performed, the substrate is placed on the mask, and the light-emitting layer 66R emitting red light is formed in a portion where the elements emitting red light of the substrate 5 are arranged. According to this embodiment, the mask and the substrate can be satisfactorily superposed on each other, and a film can be formed with high accuracy.

Similarly to the formation of the light-emitting layer 66R, the light-emitting layer 66G emitting green light is formed by the third film formation device, and the light-emitting layer 66B emitting blue light is formed by the fourth film formation device. After the completion of the film formation of the light-emitting

layers

66R, 66G, and 66B, the electron transit layer 67 is formed over the entire display region 61 by the fifth film formation device. Each of the light-emitting

layers

66R, 66G, and 66B may be a single layer or a stack of a plurality of different layers. The electron transport layer 65 is formed as a common layer on the

light emitting layers

66R, 66G, and 66B of the three colors. In this embodiment, the electron transport layer 67 and the

light emitting layers

66R, 66G, and 66B are formed by vacuum evaporation.

Next, a second electrode 68 was formed on the electron transport layer 67. The second electrode is formed by sputtering. Here, the film formation apparatus used for film formation in this step is the film formation apparatus described in any of the above embodiments.

After that, the substrate on which the second electrode 68 is formed is moved to a sealing device, and the protective layer P is formed by plasma CVD (sealing step), whereby the organic EL display device 600 is completed. Here, the protective layer P is formed by CVD, but is not limited thereto. The metal oxide film can be formed by an ALD method or a sputtering method.

When the substrate 5 on which the insulating layer 69 has been patterned is exposed to an atmosphere containing moisture or oxygen until the formation of the protective layer P is completed after being carried into the film forming apparatus, there is a risk that the light-emitting layer made of an organic EL material is deteriorated by moisture or oxygen. Therefore, in this example, the substrate is carried in and out between the film deposition apparatuses in a vacuum atmosphere or an inert gas atmosphere.

Description of the reference numerals

1. Sputtering installation, 2. Sputtering chamber, 3. Cathode unit, 30. Target, 31. Housing, 32. Mobile table, 320. Upper surface, 4. Magnet unit, 5. Control unit, A. Film-forming area, B. Film-forming standby area

Claims

1. A film forming apparatus includes:

a chamber;

a cylindrical target disposed in the chamber;

a moving mechanism that moves the target and the atmospheric tank between a facing region where the target faces the film formation object in an upward direction in the vertical direction and a non-facing region where the target does not face the film formation object in the upward direction in the vertical direction;

a magnetic field forming mechanism which is provided inside the target and forms a magnetic field for sputtering on a surface side of the target;

the film forming apparatus is configured to form a film of the material ejected from the target on the object to be film formed,

the control mechanism is used for controlling the speed of the motor,

controlling a position of the magnetic field forming mechanism so that the magnetic field is formed between the target and the object to be film-formed when the target is in the facing region,

the control mechanism is used for controlling the speed of the motor,

controlling a position of the magnetic field forming mechanism so as to form the magnetic field between the target and the opposing face of the atmospheric tank when the target is in the non-opposing region.

2. The film forming apparatus according to claim 1, wherein the magnetic field generating mechanism includes a magnet unit movable in a hollow space inside the target,

the magnet unit is located above the hollow space in the vertical direction when the target is in the opposing area,

when the target is located in the non-facing region, the magnet unit is located vertically below the hollow space.

3. The film forming apparatus according to claim 2,

the magnet unit includes:

a first magnet extending parallel to a central axis of the target, a face opposite an inner surface of the target having a first polarity;

a second magnet provided at a predetermined interval from the first magnet, a surface of the second magnet facing the inner surface of the target having a second polarity opposite to the first polarity,

the target and the magnet unit rotate independently of each other with the central axis as a rotation axis.

4. The film forming apparatus according to claim 3, wherein the surface of the first magnet is located above the rotation axis in a vertical direction when the target is located in the facing region,

when the target is in the non-facing region, the surface of the first magnet is located below the rotation axis in the vertical direction.

5. A film forming apparatus includes:

a cylindrical first target;

a cylindrical second target, a central axis of which is arranged in parallel with a central axis of the first target and a film formation surface of an object to be film-formed, respectively;

a moving mechanism that moves the first target and the second target between a facing region where the first target and the second target face each other in an upward direction in a vertical direction with respect to the film formation object and a non-facing region where the first target and the second target do not face each other in the upward direction in the vertical direction with respect to the film formation object;

a first magnetic field forming mechanism which is provided inside the first target and forms a magnetic field for sputtering on a surface side of the first target;

a second magnetic field forming mechanism which is provided inside the second target and forms a magnetic field for sputtering on a surface side of the second target;

a control mechanism that controls a position of the first magnetic field forming mechanism and a position of the second magnetic field forming mechanism,

the film forming apparatus is configured to form a film of the material ejected from the first target and the second target on the object to be film-formed,

the control mechanism is used for controlling the speed of the motor,

when the first target and the second target are in the opposing region,

controlling a position of the first magnetic field forming mechanism so that a magnetic field is formed between the first target and the object to be film-formed,

controlling a position of the second magnetic field forming mechanism so that a magnetic field is formed between the second target and the object to be film-formed,

the control mechanism is used for controlling the speed of the motor,

when the first target and the second target are in the non-opposing region,

the first magnetic field forming means is controlled to a position where a magnetic field is not formed between the first target and the object to be film-formed,

the second magnetic field forming mechanism is controlled to a position where a magnetic field is not formed between the second target and the object to be film-formed.

6. The film forming apparatus according to claim 5,

the control mechanism is used for controlling the speed of the motor,

when the first target and the second target are in the non-opposing region,

controlling positions of the first magnetic field forming mechanism and the second magnetic field forming mechanism so as to form the magnetic field between the first target and the second target.

7. The film forming apparatus according to claim 5 or 6,

the first magnetic field forming mechanism includes a first magnet unit movable in a first hollow space inside the first target,

the second magnetic field forming mechanism includes a second magnet unit movable in a second hollow space inside the second target,

the first magnet unit is located above the first hollow space in the vertical direction when the first target is in the opposing area,

the second magnet unit is located above the second hollow space in the vertical direction when the second target is in the opposing area,

when the first target and the second target are in the non-opposing region, the first magnet unit and the second magnet unit become closest in distance to each other.

8. The film forming apparatus according to claim 7, wherein,

the first magnet unit includes:

a first magnet extending parallel to a central axis of the first target, the first magnet having a first polarity on a face opposite an inner surface of the first target;

a second magnet provided at a distance from the first magnet and having a second polarity opposite to the first polarity on a surface facing the inner surface of the first target,

the second magnet unit includes:

a third magnet extending parallel to a central axis of the second target, the third magnet having the first polarity on a face opposite to an inner surface of the second target;

a fourth magnet disposed at a distance from the third magnet and having the second polarity on a face opposite to the inner surface of the second target,

the first target and the first magnet unit rotate independently of each other with a central axis of the first target as a rotation axis,

the second target and the second magnet unit rotate independently of each other with a central axis of the second target as a rotation axis.

9. The film forming apparatus according to claim 8,

wherein the surface of the first magnet is positioned above a central axis of the first target in a vertical direction when the first target is in the facing region,

wherein the surface of the third magnet is located above a central axis of the second target in a vertical direction when the second target is in the facing region,

when the first target and the second target are in the non-opposing region, the face of the first magnet and the face of the third magnet become closest in distance to each other.

10. The film forming apparatus according to claim 6, wherein the first target and the second target are made of the same material.

11. The film forming apparatus according to claim 5, further comprising a shielding member having an opposing surface opposing each of the first target and the second target in an upward direction in a vertical direction,

the control mechanism is used for controlling the speed of the motor,

when the first target and the second target are in the non-opposing region,

magnetic fields are formed between the first target and the opposing face, and between the second target and the opposing face, respectively.

12. The film forming apparatus according to claim 11, wherein the shielding member is an atmospheric tank whose inside is kept at atmospheric pressure.

13. The film forming apparatus according to any one of claims 1 to 4 and 12, wherein the atmosphere tank is provided with a flow path through which a cooling medium flows in the vicinity of the opposing surface.

14. A film forming method, characterized in that a film is formed on a substrate by the film forming apparatus according to any one of claims 1 to 6 and 11 to 13.

15. A method for manufacturing an electronic device, comprising the step of forming a metal film on a substrate by the film formation method according to claim 14.