WO2023047995A1 - Sputtering deposition source and deposition device - Google Patents

Abstract

In this sputtering deposition source, a magnetic circuit comprising permanent magnets (22a, 23a) and a yoke (24a) and a magnetic circuit comprising permanent magnets (22b, 23b) and a yoke (24b) are provided on the respective back surfaces of targets (21a, 21b) arranged facing each other across a space (20); permanent magnets (28a, 28b) for generating magnetic lines of force (27) for shielding plasma are provided facing each other on one end side of the targets (21a, 21b); yokes (29a, 29b, 29c) connecting these permanent magnets (28a, 28b) to each other are provided so as to surround the targets (21a, 21b) and the magnetic circuits on the back surfaces thereof; a deposition substrate (1) is arranged on the opening side of the space (20) so as to face the space (20), and deposition is performed.

Description

Sputtering deposition source and deposition equipment

The present invention relates to a sputtering film formation source and a film formation apparatus, and is suitable for application to the manufacture of various devices for forming thin films by the sputtering method.

In a general sputtering deposition source, the sputtering area on the target faces the object to be deposited. Since it collides with a large kinetic energy, it causes a great deal of damage to the object to be deposited, and a thin film is formed by sputtering directly on materials that are vulnerable to damage, such as organic light emitting materials, power generation materials, semiconductor silicon passivation films, etc. it was impossible to

The facing target type sputtering film formation source is a film formation source developed for the purpose of forming a thin film while reducing the damage to the materials that are vulnerable to the above damage. As a conventional facing-target-type sputtering deposition source, those described in Patent Documents 1 and 2 are known. In Patent Document 1, a pair of targets are arranged facing each other at a predetermined interval, magnetic field generating means made of permanent magnets are provided along the outer periphery of each target, and the targets are perpendicularly opposed to each other to surround the facing space between the targets. A facing target section is provided in which a mode magnetic field and a magnetron mode magnetic field extending from the vicinity of the front of the outer circumference of the target to the surface near the center are formed, plasma is formed in the facing space, and is arranged on the side of the facing space. In a facing target type sputtering apparatus for forming a thin film on a substrate, it is described that a permanent magnet is provided in the magnetic path as magnetic field adjusting means for adjusting the magnetic field of the magnetron mode. In the facing target type sputtering apparatus described in Patent Document 2, a pair of targets are arranged via a facing space, and a pair of permanent magnets are arranged on the side surfaces thereof so that the N pole and the S pole face each other, A yoke is arranged to magnetically connect the magnetic poles on the opposite side of the facing space of the pair of permanent magnets. The yoke is composed of a core portion arranged behind one permanent magnet, a core portion arranged behind the other permanent magnet, and a connecting portion connecting these two core portions. These core portion and connecting portion are formed of a ferromagnetic material.

However, according to the study of the present inventor, the following problems exist in the conventional facing-target-type sputtering deposition sources described in Patent Documents 1 and 2. That is, FIG. 1 schematically shows a representative embodiment of the facing target type sputtering deposition source described in Patent Documents 1 and 2. In FIG. In FIG. 1, reference numeral 1 is a film-forming object, 10 is a facing space, 11a and 11b are targets, 12a, 12b, 13a and 13b are permanent magnets, 14a, 14b and 14c are yokes, and 16a, 16b, 16a' and 16b. ', 17, 17' indicate lines of magnetic force. In this conventional facing target type sputtering film formation source, sputtered particles (not shown) fly out toward the film-forming object 1 from the facing space 10 facing the film-forming object 1, but the magnetic flux density of the magnetic lines of force 17 is insufficient, the plasma existing in the facing space 10 also leaks toward the film-forming object 1, and film formation cannot be performed with low damage. By connecting the yoke 14a and the yoke 14b with the yoke 14c, the magnetic flux density of the lines of magnetic force 17 is increased compared to the technology used prior to the present prior art, and the plasma leaks toward the object 1 to be deposited. Although the amount of was reduced, the low-damage effect was not sufficient. The technical reason for this is that since the magnetic lines of force outside the permanent magnet go from the N pole to the S pole, if the permanent magnet 12a in FIG. It enters the yoke 14b, passes through the yoke 14c, enters the yoke 14a, and returns to the S pole of the permanent magnet 12a. However, since the magnetic lines of force 16b' and the lines of magnetic force 16a' are opposite directions in the yokes 14a and 14b on the way from the yoke 14b to the yoke 14c and into the yoke 14a, the magnetic lines of force flow into the yoke 14a. As a result, the magnetic flux density of the magnetic lines of force 17 is reduced, and the amount of plasma leaking from the opposing space 10 toward the film-forming object 1 increases. Therefore, there is a problem that the effect of low-damage film formation is reduced.

JP-A-2003-155564 Japanese Patent Application Laid-Open No. 2004-107733

Therefore, the problem to be solved by the present invention is to be able to reduce the damage inflicted on the film-forming object, or to simultaneously realize the reduction of the damage inflicted on the film-forming object and the improvement of the film-forming rate. An object of the present invention is to provide a sputtering deposition source and a deposition apparatus using this sputtering deposition source.

Another problem to be solved by the present invention is to realize a favorable film thickness distribution in addition to reduction of damage given to a film-forming object or reduction of damage given to a film-forming object and improvement of a film-forming rate. It is an object of the present invention to provide a sputtering deposition source and a deposition apparatus using this sputtering deposition source.

In order to solve the above problems, the present invention
a first target and a second target arranged to face each other;
A first permanent magnet provided on the back surface of the first target and provided in a portion corresponding to the outer peripheral portion of the first target so that the magnetization direction is perpendicular to the first target; and the first target. a second permanent magnet provided in a portion corresponding to the central portion of the first permanent magnet so as to have a polarity opposite to that of the first permanent magnet; and a first yoke connecting the first permanent magnet and the second permanent magnet to each other a first magnetic circuit;
Provided on the back surface of the second target, a portion corresponding to the outer peripheral portion of the second target is provided so that the magnetization direction is perpendicular to the second target and has a polarity opposite to that of the first permanent magnet. and a fourth permanent magnet provided in a portion corresponding to the central portion of the second target so as to have a polarity opposite to that of the third permanent magnet, the third permanent magnet, and the fourth permanent magnet. a second magnetic circuit formed by a second yoke coupling the
a fifth permanent magnet provided on one end side of the first target in parallel with the first permanent magnet so as to have the same polarity as the first permanent magnet;
a sixth permanent magnet provided on one end side of the second target parallel to the third permanent magnet and facing the fifth permanent magnet so as to have the same polarity as the third permanent magnet;
a third yoke coupling the fifth permanent magnet and the sixth permanent magnet to each other outside the first magnetic circuit and the second magnetic circuit;
is a sputtering deposition source having

In this sputtering deposition source, the first magnetic circuit forms a magnetron magnetic field on the surface of the first target, and the second magnetic circuit forms a magnetron magnetic field on the surface of the second target. By these magnetron magnetic fields, the plasma can be confined near the first target and the second target, and the first target and the second target can be efficiently sputtered, respectively, to form a thin film on the object to be deposited. can. The third yoke may be provided so as to surround the first magnetic circuit and the second magnetic circuit, or may be provided so as not to surround the first magnetic circuit and the second magnetic circuit.

In this sputtering film formation source, from the viewpoint of reducing the leakage magnetic flux density at the position of the object to be film-formed, preferably, the surface of the fifth permanent magnet on the side of the first permanent magnet is magnetized in the direction of the fifth permanent magnet. A first auxiliary permanent magnet and a second auxiliary permanent magnet having polarities opposite to each other are provided in order toward the tip of the fifth permanent magnet so as to be perpendicular to the magnetization direction, and the first auxiliary permanent magnet is provided on the opposite side of the fifth permanent magnet. has the same polarity as the magnetic poles of the first permanent magnets on the first yoke side, and the magnetic poles of the sixth permanent magnets on the third permanent magnet side are arranged so that their magnetization directions are perpendicular to the magnetization directions of the sixth permanent magnets. A third auxiliary permanent magnet and a fourth auxiliary permanent magnet with opposite polarities are provided in order toward the tip of the sixth permanent magnet, and the magnetic pole of the third auxiliary permanent magnet opposite to the sixth permanent magnet is the third auxiliary permanent magnet of the third permanent magnet. 2 It has the same polarity as the magnetic pole on the yoke side. Moreover, from the viewpoint of increasing the amount of sputtering on the film-forming object side, preferably, the second permanent magnet and the fourth permanent magnet are arranged closer to the third yoke side.

In this sputtering deposition source, backing plates are optionally provided between the first target and the first and second permanent magnets and between the second target and the third and fourth permanent magnets, respectively. is provided. By cooling these backing plates, the first target and the second target can be cooled. If necessary, target shields are provided near the outer periphery of the first target and near the outer periphery of the second target, respectively. The third yoke may also serve as a housing for the sputtering deposition source, if necessary.

This sputtering deposition source is significantly different from the conventional technology in the plasma generation mechanism and the characteristics of the sputtering deposition source. Plasma generated by the magnetic field in the facing mode causes the main sputtering phenomenon of the film formation source, but in this sputtering film formation source, the plasma generated by the magnetic field in the magnetron mode causes almost all the sputtering phenomena in the film formation source. It is also characterized by having an opposing mode magnetic field perpendicular to the target only on the side facing the object to be deposited in the space between the targets. It can be eliminated, and the film formation rate can be improved, and at the same time, low damage property can be realized. In addition, the magnetron mode plasma that causes the sputtering phenomenon can realize high-speed film formation, and at the same time, can realize a favorable film thickness distribution due to the uniformity of the plasma.

According to this sputtering film formation source, the film formation rate is greatly improved compared to the conventional facing target type sputtering film formation source, and at the same time, the film can be formed at an extremely low temperature. The reason for this is as follows. As can be seen from the magnetic field distribution shown in FIG. 1, the conventional facing target type sputtering deposition source has magnetic lines of force composed of permanent magnets arranged along the outer periphery of a pair of targets provided to face each other, that is, lines of force perpendicular to the targets. Since the magnetic field due to the magnetic field lines in the opposing mode was dominant, the thickness of the ion sheath generated at the interface between the plasma generated by the magnetic field and the target was large, and the electric field strength generated there was weakened, resulting in insufficient sputtering. No film rate was obtained. At the same time, since the plasma has the characteristic of gathering in the center of the region surrounded by the pair of targets and the magnetic lines of force, the plasma density near the center of the target is high, while the plasma density near both ends of the target is low. As a result, the amount of film formed by sputtering from the vicinity of the center of the target is large, and the amount of film formed by sputtering from the vicinity of both ends of the target is small. Furthermore, although the targets are coupled by a yoke that does not face the object to be deposited in the space between the targets, the opposing mode magnetic field in the space facing the object to be deposited weakens as indicated by the dotted line in FIG. As a result, the plasma shielding ability is reduced, and the effect of the yoke is not sufficient, resulting in a problem of low damage. On the other hand, according to this sputtering deposition source, as is clear from the magnetic field distribution shown in FIG. is uniform, it is possible to realize a sputtering deposition source with a good film thickness distribution. Furthermore, a fifth permanent magnet and a sixth permanent magnet are independently present as opposed mode magnetic field generating means in the space between the first target and the second target facing the object to be deposited, and these By configuring the third yoke, which couples the fifth permanent magnet and the sixth permanent magnet, so as not to face the object to be film-formed in the space, the opposite mode is generated in the space facing the object to be film-formed. Since the magnetic field is stronger and the plasma shielding ability is sufficiently large, it is also excellent in low damage.

Also, this invention
a target and a sputter particle collection shield positioned opposite each other;
A seventh permanent magnet provided on the back surface of the target and corresponding to the outer peripheral portion of the target so that the magnetization direction is perpendicular to the target, and a portion corresponding to the central portion of the target. a magnetic circuit formed by an eighth permanent magnet provided to have a polarity opposite to that of the seventh permanent magnet and a fourth yoke coupling the seventh permanent magnet and the eighth permanent magnet to each other;
a ninth permanent magnet provided on one end side of the target in parallel with the seventh permanent magnet so as to have the same polarity as the seventh permanent magnet;
a tenth permanent magnet provided on one end side of the sputter particle collection shield parallel to the seventh permanent magnet and opposed to the ninth permanent magnet so as to have the same polarity as the ninth permanent magnet; ,
a fifth yoke coupling the ninth permanent magnet and the tenth permanent magnet to each other outside the magnetic circuit and the sputter particle collection shield;
is a sputtering deposition source having

In this sputtering film formation source, from the viewpoint of reducing the leakage magnetic flux density at the position of the object to be film-formed, the surface of the ninth permanent magnet on the seventh permanent magnet side is preferably magnetized in the direction of the ninth permanent magnet. A fifth auxiliary permanent magnet and a sixth auxiliary permanent magnet having polarities opposite to each other are provided in order toward the tip of the ninth permanent magnet so as to be perpendicular to the magnetization direction, and the fifth auxiliary permanent magnet is provided on the opposite side of the ninth permanent magnet. has the same polarity as the magnetic pole of the seventh permanent magnet on the fourth yoke side. Also, from the viewpoint of increasing the amount of sputtering on the film-forming object side, the eighth permanent magnet is preferably arranged closer to the fifth yoke side. The fifth yoke may be provided so as to surround the magnetic circuit and the sputtered particle collection shield, or may be provided so as not to surround the magnetic circuit and the sputtered particle collection shield.

In this sputtering deposition source, a heater is provided on the back surface of the sputter particle collection shield as needed. By heating the sputtered particle collection shield with this heater, the adhesion probability of the sputtered particles reaching the sputtered particle collection shield from the target is reduced, thereby increasing the number of sputtered particles re-adhering to the target. It is possible to improve the utilization rate of the target. The sputter particle trapping shield may be provided parallel to the target, such that the distance between the sputter particle trapping shield and the target increases linearly towards the ninth and tenth permanent magnets. It may be slanted with respect to the target, or curved convexly toward the target such that the distance between the sputter particle collection shield and the target increases toward the ninth and tenth permanent magnets. It may also be provided to have a curvilinear cross-sectional shape. If necessary, a backing plate is provided between the target and the seventh and eighth permanent magnets. In addition, a target shield is provided near the outer periphery of the target as needed. If necessary, the fifth yoke may also serve as the casing of the sputtering deposition source.

This sputtering deposition source excludes one of the targets in the sputtering deposition source using the first target and the second target, and also excludes the magnetic circuit for forming the magnetron magnetic field existing on the back surface of the excluded target. , Instead, only on the side facing the film-forming object, a permanent magnet is arranged with the same magnetic pole direction as the outer peripheral permanent magnet facing the film-forming object of the magnetic circuit provided on the back surface of the target that is not excluded. Equivalent to. Furthermore, the characteristics of the plasma generation mechanism and the sputter deposition source are also significantly different from those of the prior art. That is, in the conventional facing target type sputtering source, the plasma generated by the facing mode magnetic field perpendicular to the targets surrounding the space between the targets causes the main sputtering phenomenon of the deposition source. The source is characterized in that the plasma generated by the magnetron-mode magnetic field causes all sputtering phenomena in the deposition source, and only the side facing the substrate between the target and the sputter particle collection shield In , by also having the feature of having a facing mode magnetic field perpendicular to the target, it is possible to almost eliminate the plasma leaking in the direction of the object to be deposited, and it is possible to realize sputtering deposition with an emphasis on low damage. . In addition, the magnetron-mode plasma, which causes the sputtering phenomenon, can simultaneously achieve a favorable film thickness distribution due to the uniformity of the plasma. Furthermore, since the target exists only on one side, the effect is greatly exhibited by applying it to a film forming apparatus using a roll-to-roll method. That is, when the deposition source is arranged with the target facing upward, foreign matter generated from a non-sputtering region, that is, a non-erosion portion existing in the vicinity of the sputtering region of the target falls on the lower target. Since the arc phenomenon does not occur structurally, the frequency of inclusion of foreign matter in the film formed on the object to be deposited is extremely low, and good-quality sputtering film deposition is possible.

According to this sputtering film formation source, as is clear from the magnetic field distribution shown in FIG. 4, which will be described later, the magnetron mode plasma is the entire plasma and the facing mode plasma does not exist, so the magnetron mode plasma density is uniform. Therefore, a sputtering deposition source with good film thickness distribution can be realized. Furthermore, a ninth permanent magnet and a tenth permanent magnet independently exist as opposed mode magnetic field generating means in the space between the target facing the object to be deposited and the sputter particle collection shield, and By configuring the fifth yoke that couples the ninth permanent magnet and the tenth permanent magnet of each other so as not to face the object to be film-formed in the space, the opposite mode is generated in the space facing the object to be film-formed Since the magnetic field is strong and the plasma shielding ability is sufficiently large, excellent low damage property can also be obtained at the same time.

Also, this invention
a first cylindrical target and a second cylindrical target arranged parallel and facing each other;
One magnetic pole provided inside the first cylindrical target is provided so as to face the inner peripheral surface of the first cylindrical target and extend in the direction of the central axis of the first cylindrical target. an eleventh permanent magnet and a twelfth permanent magnet which are separated from the eleventh permanent magnet so as to surround the outer periphery of the eleventh permanent magnet and which are opposite in polarity to the eleventh permanent magnet, the eleventh permanent magnet, and a third magnetic circuit formed by a sixth yoke coupling the twelfth permanent magnets together;
One magnetic pole provided inside the second cylindrical target is provided so as to face the inner peripheral surface of the second cylindrical target and extend in the direction of the central axis of the second cylindrical target. a thirteenth permanent magnet provided with a polarity opposite to that of the eleventh permanent magnet; a fourth magnetic circuit formed by a fourteenth permanent magnet and a seventh yoke coupling the thirteenth permanent magnet and the fourteenth permanent magnet to each other;
a fifteenth permanent magnet facing the first cylindrical target and parallel to a plane containing the central axis of the first cylindrical target and the central axis of the second cylindrical target;
a 16th permanent magnet having the same polarity as the 15th permanent magnet provided parallel to the plane facing the second cylindrical target and facing the 15th permanent magnet;
an eighth yoke coupling the fifteenth permanent magnet and the sixteenth permanent magnet to each other outside the third magnetic circuit and the fourth magnetic circuit;
is a sputtering deposition source having

In this sputtering film formation source, from the viewpoint of reducing the leakage magnetic flux density at the position of the object to be film-formed, preferably, the magnetization direction of the 15th permanent magnet is on the surface of the 15th permanent magnet on the side of the first cylindrical target. A seventh auxiliary permanent magnet and an eighth auxiliary permanent magnet having polarities opposite to each other are provided in order toward the tip of the fifteenth permanent magnet so as to be perpendicular to the magnetization direction of the seventh auxiliary permanent magnet and opposite to the fifteenth permanent magnet of the seventh auxiliary permanent magnet. The side magnetic pole has the same polarity as the magnetic pole on the eighth yoke side of the fifteenth permanent magnet, and the magnetization direction of the second cylindrical target side surface of the sixteenth permanent magnet is perpendicular to the magnetization direction of the sixteenth permanent magnet. A ninth auxiliary permanent magnet and a tenth auxiliary permanent magnet having opposite polarities to each other are provided in order toward the tip of the sixteenth permanent magnet, and the magnetic pole of the ninth auxiliary permanent magnet on the opposite side of the sixteenth permanent magnet is the sixteenth permanent magnet. has the same polarity as the magnetic pole on the side of the eighth yoke. If necessary, the eighth yoke may also serve as the casing of the sputtering deposition source. The eighth yoke may be provided so as to surround the third magnetic circuit and the fourth magnetic circuit, or may be provided so as not to surround the third magnetic circuit and the fourth magnetic circuit.

Also, this invention
a cylindrical target and a sputter particle collection shield positioned opposite each other;
A seventeenth permanent magnet provided inside the cylindrical target so that one magnetic pole faces the inner peripheral surface of the cylindrical target and extends in the central axis direction of the cylindrical target. and an 18th permanent magnet provided away from the 17th permanent magnet so as to surround the outer periphery of the 17th permanent magnet and having a polarity opposite to that of the 17th permanent magnet, the 17th permanent magnet, and the 18th permanent magnet a magnetic circuit formed by a ninth yoke coupled to each other;
a nineteenth permanent magnet facing the cylindrical target and parallel to a plane including the central axis of the cylindrical target;
a twentieth permanent magnet having the same polarity as the nineteenth permanent magnet, provided facing the sputtered particle collection shield in parallel with the plane and facing the nineteenth permanent magnet;
a tenth yoke coupling the nineteenth permanent magnet and the twentieth permanent magnet to each other outside the magnetic circuit and the sputter particle collection shield;
is a sputtering deposition source having

In this sputtering film formation source, from the viewpoint of reducing the leakage magnetic flux density at the position of the object to be film-formed, the 11th auxiliary permanent magnets of opposite polarities are preferably arranged on the surface of the 19th permanent magnet on the cylindrical target side. and a 12th auxiliary permanent magnet are provided in order toward the tip of the 19th permanent magnet. A heater is provided on the back surface of the sputtered particle collection shield as required. The sputtered particle collection shield may be provided perpendicular to the plane containing the central axis of the cylindrical target, or may be provided at an angle to the plane. If necessary, the tenth yoke may also serve as the casing of the sputtering deposition source. The tenth yoke may be provided so as to surround the magnetic circuit and the sputtered particle collection shield, or may be provided so as not to surround the magnetic circuit and the sputtered particle collection shield.

A DC power supply, a DC pulse power supply, a high-frequency power supply, a high-frequency pulse power supply, etc. are used as the power supply for supplying power to any of the sputtering deposition sources described above, and are selected from among these as necessary.

Various types of film forming apparatuses can be configured using any one or two or more of the above sputtering film forming sources. The film forming apparatus is not particularly limited, but for example, it is a type that forms a film while transporting an object to be film-formed, typically a substrate, in one direction, while repeating reciprocating motion, or while repeating both of these. A film deposition apparatus of the type in which film formation is performed with the object to be deposited stationary, while rotating the object to be deposited in one direction, or while repeating rotation in one direction and rotation in the opposite direction , or a type of film-forming apparatus that forms a film while repeating both of these, while conveying a roll-shaped film to be film-formed in one direction, or while repeating a reciprocating motion, or while repeating both of these and a roll-to-roll type film forming apparatus.

According to the present invention, it is possible to reduce the damage to the film-forming object, or to reduce the damage to the film-forming object and to improve the film-forming rate, or to improve the film thickness distribution. can also be obtained at the same time, and by using this excellent sputtering film formation source, a high-performance film formation apparatus can be realized.

It is a front view for explaining the problem of the conventional facing target type sputtering deposition source. 1 is a front view showing a sputtering deposition source according to a first embodiment of the invention; FIG. FIG. 4 is a front view showing a magnetic circuit provided on the back surface of the target of the sputtering film formation source according to the first embodiment of the present invention; FIG. 6 is a front view showing a sputtering deposition source according to a second embodiment of the invention; It is a front view which shows the sputtering film-forming source by the 3rd Embodiment of this invention. It is a front view which shows the sputtering film-forming source by the 4th Embodiment of this invention. FIG. 11 is a front view showing a sputtering film formation source according to a fifth embodiment of the present invention; It is a front view which shows the sputtering film-forming source by the 6th Embodiment of this invention. FIG. 11 is a front view showing a sputtering film formation source according to a seventh embodiment of the invention; FIG. 11 is a front view showing a sputtering film formation source according to an eighth embodiment of the present invention; FIG. 12 is a front view showing a sputtering film formation source according to a ninth embodiment of the present invention; It is a front view which shows the sputtering film-forming source by the 10th Embodiment of this invention. It is a front view which shows the sputtering film-forming source by the 11th Embodiment of this invention. FIG. 20 is a front view showing a sputtering film formation source according to a twelfth embodiment of the invention; FIG. 22 is a front view showing a sputtering film formation source according to a thirteenth embodiment of the present invention; It is a front view which shows the film-forming apparatus by the 14th Embodiment of this invention. FIG. 21 is a front view showing a film forming apparatus according to a fifteenth embodiment of the present invention; It is a front view which shows the film-forming apparatus by the 16th Embodiment of this invention. FIG. 20 is a front view showing a sputtering film formation source according to a seventeenth embodiment of the present invention; FIG. 20 is a front view showing a sputtering film formation source according to an eighteenth embodiment of the present invention; FIG. 20 is a front view showing a sputtering deposition source according to a nineteenth embodiment of the present invention; FIG. 20 is a front view showing a sputtering deposition source according to a twentieth embodiment of the present invention;

Hereinafter, the modes for carrying out the invention (hereinafter referred to as "embodiments") will be described with reference to the drawings.

<First embodiment>
[Sputtering deposition source]
FIG. 2A shows a sputtering deposition source according to the first embodiment. As shown in FIG. 2A, in this sputtering deposition source, a pair of targets 21a and 21b facing each other across a space 20 are provided parallel to each other. The targets 21a, 21b have a rectangular shape extending in a direction perpendicular to FIG. 2A. A permanent magnet 22a is provided on the outer peripheral portion of the back surface of the target 21a so that the magnetization direction is perpendicular to the back surface of the target 21a, and a permanent magnet 23a having a polarity opposite to that of the permanent magnet 22a is provided in the central portion in parallel with the long side of the target 21a. is provided. A yoke 24a having the same shape as the target 21a is provided on the opposite side of the permanent magnets 22a and 23a from the target 21a. A magnetic circuit is formed by the target 21a, the permanent magnets 22a and 23a, and the yoke 24a. Magnetic lines of force 26a, 26a', 25a' are formed in this magnetic circuit. FIG. 2B shows an example of a front view of the permanent magnets 22a, 23a and the yoke 24a. FIG. 2A shows the case where the magnetic pole of the permanent magnet 22a on the target 21a side is the N pole, and the magnetic pole on the opposite side of the target 21a is the S pole, but the polarities of the permanent magnets 22a and 23a are opposite. good too. Similarly, a permanent magnet 22b is provided on the outer peripheral portion of the back surface of the target 21b so that the magnetization direction is perpendicular to the back surface of the target 21b, and a permanent magnet 22b having a polarity opposite to that of the permanent magnet 22b is provided in the central portion in parallel with the long side of the target 21b. A magnet 23b is provided. A yoke 24b having the same shape as the target 21b is provided on the opposite side of the permanent magnets 22b and 23b from the target 21a. A magnetic circuit is formed by the target 21b, the permanent magnets 22b and 23b, and the yoke 24b. Magnetic force lines 26b, 26b' and 25b' are formed in this magnetic circuit. Target 21a, permanent magnets 22a, 23a and yoke 24a and target 21b, permanent magnets 22b, 23b and yoke 24b are arranged symmetrically with respect to a bisecting plane of space 20 parallel to targets 21a, 21b.

On the opposite side of the yoke 24a from the space 20, a yoke 29a is provided in parallel with the yoke 24a, sufficiently spaced from the yoke 24a and in an independent state. The yoke 29a has a rectangular shape larger than the yoke 24a and completely covers the yoke 24a. Similarly, on the opposite side of the yoke 24b from the space 20, a yoke 29b is provided in parallel with the yoke 24b, sufficiently separated from the yoke 24b. The yoke 29b has a rectangular shape larger than the yoke 24b and completely covers the yoke 24b. At one end of the space 20 side surface of the yoke 29a, a permanent magnet 28a having a magnetization direction perpendicular to this surface is provided facing the permanent magnet 22a at a predetermined distance. The tip of the permanent magnet 28a is positioned substantially flush with the surface of the target 21a. The magnetic pole of the permanent magnet 28a is the south pole on the yoke 29a side. Similarly, at one end of the space 20 side surface of the yoke 29b, a permanent magnet 28b whose magnetization direction is perpendicular to this surface is provided facing the permanent magnet 22b at a predetermined distance. The tip of the permanent magnet 28b is positioned substantially flush with the surface of the target 21b. The magnetic pole of the permanent magnet 28b is the north pole on the yoke 29b side. A yoke 29c is formed between the end of the yoke 29a opposite to the one end provided with the permanent magnet 28a and the end of the yoke 29b opposite to the one end provided with the permanent magnet 28b. 29a and the yoke 29b are provided to be connected. The yoke 29c is provided at a position sufficiently distant from the permanent magnets 22a and 22b so that the magnetic lines of force 25a' of the permanent magnet 22a and the magnetic lines of force 25b' of the permanent magnet 22b do not enter the yoke 29c. A magnetic circuit is formed by the yokes 29a, 29b, 29c and the permanent magnets 28a, 28b. Magnetic force lines 25a, 27 and 25b are formed in this magnetic circuit. The yokes 29a, 29b, 29c and the permanent magnets 28a, 28b are arranged symmetrically with respect to a bisecting plane of the space 20 parallel to the targets 21a, 21b.

As shown in FIG. 2A, in this sputtering deposition source, the deposition target 1 on which deposition is performed is placed at a position facing the space 20 .

As described above, according to the first embodiment, the yoke 24a of the magnetic circuit provided on the back surface of the target 21a and the yoke 24b of the magnetic circuit provided on the back surface of the target 21b are sufficiently separated and independent. A permanent magnet 28a and a permanent magnet 28b are arranged on one end side of the targets 21a and 21b on the film-forming object 1 side, respectively, and furthermore, a space 20 between the yokes 29a and 29b is provided in opposite directions. Since the yoke 29c is provided on the side, the magnetic lines of force 27 that shield the plasma generated on the film-forming object 1 side of the space 20 can effectively shield the magnetron plasma (not shown) generated on the targets 21a and 21b. . As a result, the plasma does not leak toward the film-forming object 1, and film formation can be effectively realized with low damage. That is, the magnetic circuit for generating the magnetic lines of force 27 that shield the plasma, the magnetic lines of force generated on the surfaces of the targets 21a and 21b and the yokes 24a and 24b and participating in the film formation, in other words, the magnetron plasma is generated on the targets 21a and 21b. Since the magnetic circuit that generates the generated magnetic lines of force exists independently of each other, the magnetic flux density of the magnetic lines of force 27 that shields the plasma can be secured sufficiently high, so that a high plasma shielding effect can be obtained. 1 can be further reduced. Further, in this sputtering deposition source, the plasma related to deposition is only the plasma generated by the magnetron mode magnetic field, and the magnetic field shielding the plasma reaching the deposition target 1 is generated independently of the magnetron mode magnetic field. Moreover, since the opposing mode magnetic field is generated only in the vicinity of the opening on the film-forming object 1 side, the plasma reaching the film-forming object 1 can be shielded effectively and reliably. This sputtering deposition source can be applied to substrates that are difficult to deposit using conventional techniques, such as organic film substrates, organic light-emitting layers, organic power-generating layers, organic electron injection layers, organic hole injection layers, etc., with low plasma resistance. A film can also be formed on a substrate made of a material characterized by low heat resistance and low high-energy particle resistance. In addition, by using a sputtering power supply capable of pulse output, sputtering film formation can be achieved at a high film formation rate with almost no damage to the film target, even with target materials that are prone to arcing. , it is possible to provide thin film formation technology for new materials and to form thin films of new materials. This sputtering film formation source is suitable for film formation of electrode materials and the like in semiconductor devices, solar cells, liquid crystal displays, organic EL devices, and the like.

<Second embodiment>
[Sputtering deposition source]
FIG. 3 shows a sputtering deposition source according to a second embodiment. As shown in FIG. 3, in this sputtering deposition source, auxiliary permanent magnets M ₁ having opposite polarities are arranged on the surface of the permanent magnet 28a on the side of the permanent magnet 22a so that the magnetization direction of the permanent magnet 28a is perpendicular to the magnetization direction of the permanent magnet 28a. , M ₂ are provided in order toward the tip of the permanent magnet 28a. The magnetic pole of the auxiliary permanent magnet _M1 on the side opposite to the permanent magnet _28a is the same S pole as the magnetic pole of the permanent magnet 22a on the yoke 24a side. It has the same N pole as the magnetic pole on the target 21a side. Similarly, on the permanent magnet 22b side of the permanent magnet 28b, auxiliary permanent magnets M ₃ and M ₄ with opposite polarities are arranged toward the tip of the permanent magnet 28a so that the magnetization direction is perpendicular to the magnetization direction of the permanent magnet 28b. are set in order. The magnetic pole of the auxiliary permanent magnet _M3 on the side opposite to the permanent magnet 28b is the same N pole as the magnetic pole of the permanent magnet 22b on the yoke 24b side, and the magnetic pole of the auxiliary permanent magnet _M4 on the side opposite to the permanent magnet 28b is the magnetic pole of the permanent magnet 22b. It is the same S pole as the magnetic pole on the target 21b side. Others are the same as those of the first embodiment.

According to the second embodiment, in addition to the advantages similar to those of the first embodiment, the following advantages can be obtained. That is, by providing the auxiliary permanent magnets M ₁ , M ₂ , M ₃ , and M ₄ , the leakage magnetic flux density to the film-forming object 1 can be reduced. It is possible to reduce plasma damage.

<Third embodiment>
[Sputtering deposition source]
FIG. 4 shows a sputtering deposition source according to a third embodiment. As shown in FIG. 4, in this sputtering deposition source, the target 21b, permanent magnets 22b and 23b, and yoke 24b in the sputtering deposition source according to the first embodiment are not provided, and instead the target 21b is provided. A sputtered particle collection shield 310 is provided at the position where it was. However, in FIG. 4, the space 20, the target 21a, the permanent magnets 22a, 23a, 28a, 28b, the yokes 24a, 29a, 29b, 29c, the magnetic force lines 26a, 26a', 25a' and 27 are represented as space 30, target 31, permanent magnets 32, 33, 38a and 38b, yokes 34, 39a, 39b and 39c, magnetic lines of force 36, 36a', 35a' and 37, respectively. Others are the same as those of the first embodiment as long as they do not contradict their nature.

According to the third embodiment, in addition to the advantages similar to those of the first embodiment, the following advantages can be obtained. That is, in the sputtering deposition source according to the first embodiment, for example, when the vertical direction in FIG. , deposits peel off from the non-erosion portion generated on the upper target 21a in the non-sputtered portion, and when they fall onto the lower target 21b, arc discharge occurs, and at the same time, the foreign matter scatters to form a film. It pollutes the body 1. On the other hand, in the sputtering deposition source according to the third embodiment, the sputtered particle collection shield 310 is provided at the position where the lower target 21b was, so that the portion of the target 31 which is not sputtered Even if the deposits are peeled off from the non-erosion portion generated in the sputter particle collection shield 310, the above-mentioned arc discharge can be prevented, thereby contamination of the film-forming object 1 due to the scattering of the foreign matter. can be prevented.

<Fourth Embodiment>
[Sputtering deposition source]
FIG. 5 shows a sputtering deposition source according to a fourth embodiment. As shown in FIG. 5, in this sputtering film formation source, in the sputtering film formation source according to the third embodiment, as in the second embodiment, the surface of the permanent magnet 38a on the side of the permanent magnet 32 is assisted. Permanent magnets M ₁ , M ₂ are provided. Others are the same as those of the third embodiment as long as they do not contradict its nature.

According to the fourth embodiment, in addition to advantages similar to those of the third embodiment, advantages similar to those of the second embodiment can be obtained.

<Fifth embodiment>
[Sputtering deposition source]
FIG. 6 shows a sputtering deposition source according to a fifth embodiment. As shown in FIG. 6, in this sputtering film formation source, a heater 41 is provided behind the sputter particle collection shield 310 in the sputtering film formation source according to the third embodiment. The collection shield 310 can be heated. This heating temperature can be adjusted by controlling the current supplied from the heater power source 42 to the heater 41, and can be maintained at an appropriate temperature.

According to the fifth embodiment, in addition to the advantages similar to those of the third embodiment, the following advantages can be obtained. That is, since the sputtered particle collection shield 310 can be heated by the heater 41, the adhesion probability of the sputtered particles reaching the sputtered particle collection shield 310 from the target 31 is reduced, in other words, the detachment probability is improved. By reattaching the sputtered particles proportional to , to the target 31, the utilization efficiency of the target 31 can be improved.

<Sixth Embodiment>
[Sputtering deposition source]
FIG. 7 shows a sputtering deposition source according to a sixth embodiment. As shown in FIG. 7, in this sputtering film formation source, in the sputtering film formation source according to the third embodiment, the central permanent magnet 33 constituting the magnetic circuit provided on the back surface of the target 31 is the target. 31, the difference is that the permanent magnet 33 is shifted by a predetermined distance from the center line of the target 31 to the opposite side of the magnetic field lines 37 shielding the plasma. Others are the same as those of the third embodiment.

According to the sixth embodiment, the following advantages can be obtained in addition to the advantages similar to those of the third embodiment. That is, the permanent magnet 33 forming a magnetic circuit provided on the back surface of the target 31 is shifted by a predetermined distance from the center line to the opposite side of the magnetic line of force 37 shielding the plasma. The amount of sputtering on the 1 side is increased, so that the film formation rate can be improved while maintaining the low damage property.

<Seventh Embodiment>
[Sputtering deposition source]
FIG. 8 shows a sputtering deposition source according to a seventh embodiment. As shown in FIG. 8, in this sputtering film formation source, in the sputtering film formation source according to the first embodiment, the central permanent magnet 23a constituting the magnetic circuit provided on the back surface of the target 21a is the target. The central permanent magnet 23b, which is positioned on the center line of the target 21a and similarly forms a magnetic circuit provided on the back surface of the target 21b, is positioned on the center line of the target 21b. The difference is that they are shifted by a predetermined distance from the centerlines of the targets 21a and 21b to the opposite side of the magnetic field lines 27 that shield the plasma. Others are the same as those of the first embodiment.

According to the seventh embodiment, advantages similar to those of the sixth embodiment can be obtained in addition to advantages similar to those of the first embodiment.

<Eighth embodiment>
[Sputtering deposition source]
FIG. 9 shows a sputtering deposition source according to an eighth embodiment. As shown in FIG. 9, in this sputtering deposition source, a target 21a is fixed to a backing plate 71a with indium (not shown), which is a good thermal conductor, and the backing plate 71a is water-cooled. It is fixed to the yoke 29c, which also serves as a housing, with bolts (not shown) that ensure electrical insulation via connecting parts 72a made of an insulating material. The same applies to the target 21b. The target 21b is fixed to a backing plate 71b with indium (not shown), which is a good thermal conductor. It is fixed to the yoke 29c, which also functions, by a bolt (not shown) that ensures electrical insulation through a connecting part 72b made of an insulator. The backing plates 71a and 71b are preferably made of oxygen-free copper, which has excellent thermal conductivity, electrical conductivity, and corrosion resistance. Copper, optionally aluminum or non-magnetic stainless steel may be used.

In addition, the yoke 24a is fixed to the yoke 29c with an electrically conductive bolt (not shown) through a connection part 74a made of a non-magnetic material, and the potential is the ground potential together with the yoke 29c, which also serves as the housing. is ensured. An electrical insulating sheet 73a made of fluororesin or the like is inserted between the backing plate 71a and the magnetic circuit to ensure high electrical insulation. The target 21b side has a similar structure, and the yoke 24b is fixed to the yoke 29c via a connecting part 74b made of a non-magnetic material with an electrically conductive bolt (not shown), and the potential is A ground potential is ensured together with the yoke 29c that also serves as the housing. An electrical insulating sheet 73b made of fluororesin or the like is inserted between the backing plate 71b and the magnetic circuit to ensure high electrical insulation.

The target 21a is surrounded by target shields 75a and 76a and two target shields (not shown) around the target 21a. The target shields are arranged electrically insulated from the target 21a and the backing plate 71a, and the ground potential is ensured, so that excess electrons in the magnetron discharge plasma are prevented from being released from these target shields. It is configured to return to the positive pole of the DC power source 77 for plasma generation via the . The same applies to the target 21b side, and the four peripheral edges of the target 21b and their outsides are surrounded by target shields 75b and 76b and two target shields (not shown), and these target shields secure the ground potential. are electrically insulated from the target 21b and the backing plate 71b, and the ground potential is ensured, so that excess electrons in the magnetron discharge plasma are discharged to the plasma generation DC power supply 77 through these target shields. It is configured to return to the positive electrode of

In addition, the negative electrode of the plasma generating DC power supply 77 for sputtering film formation is electrically connected to the backing plates 71a and 71b. However, at this time, electrical insulation is ensured between the yoke 29c and the target shield. Here, the plasma-generating DC power sources 77 connected to the backing plates 71a and 71b may be connected independently one by one. Furthermore, the plasma generating DC power supply 77 may be replaced with a high frequency power supply. Propagation to the target 21b is ensured. When the high-frequency power sources are independently connected to the backing plates 71a and 71b, an impedance matching device is inserted in each of them, and the high-frequency oscillators are made common and have a phase difference of 180°. It is possible to prevent problems caused by interference of high frequencies. The sputtering film formation may be performed by applying sinusoidal or rectangular AC power so that the targets 21a and 21b are alternately sputtered. Further, one or more thermoelectron supply sources may be provided between the target 21a and the target 21b to increase the plasma density for sputtering film formation.

A DC power supply may be connected to one of the backing plates 71a and 71b, and a high frequency power supply and an impedance matching device may be connected to the other. A thin film can be formed with low damage. Furthermore, for the DC power source and the high frequency power source, it is possible to use a power source that outputs pulses. It is possible to prevent foreign matter from entering the product and improve the non-defective product rate.

In order to cool the target 21a, the backing plate 71a connected to the target 21a with good thermal conductivity is cooled with cooling water. Typically, the interior of the backing plate 71a is configured with a channel through which cooling water flows, and the cooling water flows into and out of the interior of the backing plate 71a via the yoke 29c and a connection piece 72a made of an insulator. It is configured. The same applies to the target 21b side. In order to cool the target 21b, the backing plate 71b connected to the target 21b with good thermal conductivity is cooled with cooling water. Typically, the interior of the backing plate 71b is configured with channels through which cooling water flows, and the cooling water flows into and out of the interior of the backing plate 71b via the yoke 29c and the connecting piece 72b, which is made of an insulator. It's like Here, the channels through which the cooling water flows to the backing plates 71a and 71b are connected in parallel, but may be connected in series as long as the cooling capacity is ensured.

According to the eighth embodiment, the following advantages can be obtained in addition to the advantages similar to those of the first embodiment. That is, since the targets 21a and 21b are fixed to the backing plates 71a and 71b, respectively, and are water-cooled, it is possible to prevent the temperature of the targets 21a and 21b from rising during the use of the sputtering film forming source, thereby stabilizing the temperature of the targets 21a and 21b. film formation can be performed. In addition, the distance between the N pole of the permanent magnet 28a and the S pole of the permanent magnet 28b of the magnetic circuit that generates the magnetic lines of force that shield the plasma is the magnetic lines of force that are generated on the surface of the target 21a and the yoke 24a and participate in the film formation. is shorter than the distance between the north pole of the permanent magnet 22a that generates the magnetic field line The effectiveness of is extremely effectively realized, and more superior low-damage film formation can be realized. In addition, the target shields 75a, 76a, 75b, 76b can maintain the plasma by returning excess electrons in the magnetron mode plasma to the sputtering power supply.

<Ninth Embodiment>
[Sputtering deposition source]
FIG. 10 shows a sputtering deposition source according to the ninth embodiment. As shown in FIG. 10, in this sputtering deposition source, in the eighth embodiment, as in the second embodiment, auxiliary permanent magnets M ₁ , _M2 is provided, and auxiliary permanent magnets _M3 and _M4 are provided on the surface of the permanent magnet 28b on the side of the permanent magnet 22b. Others are the same as those of the eighth embodiment as long as it does not contradict its nature.

According to the ninth embodiment, in addition to advantages similar to those of the eighth embodiment, advantages similar to those of the second embodiment can be obtained.

<Tenth Embodiment>
[Sputtering deposition source]
FIG. 11 shows a sputtering deposition source according to the tenth embodiment. As shown in FIG. 11, in this sputtering deposition source, the target 21b, permanent magnets 22b and 23b, yoke 24b, backing plate 71b, electrical insulation sheet 73b, etc. in the eighth embodiment are not provided. Instead, a sputter particle collection shield 310 is provided at the position where the target 21b was. Others are the same as those of the eighth embodiment as long as it does not contradict its nature.

According to the tenth embodiment, the same advantages as in the third embodiment can be obtained in the ninth embodiment.

<Eleventh Embodiment>
[Sputtering deposition source]
FIG. 12 shows a sputtering deposition source according to the eleventh embodiment. As shown in FIG. 12, in this sputtering deposition source, in the tenth embodiment, as in the second embodiment, auxiliary permanent magnets M ₁ , _M2 is provided. Others are the same as the tenth embodiment as long as it does not contradict its nature.

According to the eleventh embodiment, in addition to advantages similar to those of the tenth embodiment, advantages similar to those of the second embodiment can be obtained.

<Twelfth Embodiment>
[Sputtering deposition source]
FIG. 13 shows a sputtering deposition source according to the twelfth embodiment. As shown in FIG. 13, in this sputtering deposition source, the sputtered particle collection shield 310a is positioned with respect to the target 31, and the distance between the target 31 and the sputtered particle collection shield 310a is on the side of the permanent magnets 38a and 38b. It is different in that it is inclined so as to increase linearly toward it. Others are the same as those of the tenth embodiment.

According to the twelfth embodiment, in addition to the advantages similar to those of the third embodiment, the following advantages can be obtained. That is, the sputtered particle collection shield 310a is linearly inclined with respect to the target 31 so that the distance between the target 31 and the sputtered particle collection shield 310a linearly increases toward the permanent magnets 38a and 38b. Therefore, when some of the sputtered particles adhering to the sputtered particle collection shield 310a are separated, the probability of the separated sputtered particles traveling toward the film-forming object 1 increases, thereby improving the film formation speed. can be made In addition, this sputter particle collection shield 310a is heated from the back surface by a heater like the sputter particle collection shield 310 in the fifth embodiment, so that detached sputter particles moving toward the film-forming object 1 are generated. can be further increased, and the film formation rate can be further improved.

<Thirteenth Embodiment>
[Sputtering deposition source]
FIG. 14 shows a sputtering deposition source according to a thirteenth embodiment. As shown in FIG. 14, in this sputtering deposition source, the sputtered particle collection shield 310b is positioned with respect to the target 31, and the distance between the target 31 and the sputtered particle collection shield 310b is on the side of the permanent magnets 38a and 38b. It is different in that it is curved to have an upwardly convex curvilinear cross-sectional shape that increases toward it. Others are the same as those of the tenth embodiment.

According to the thirteenth embodiment, in addition to the advantages similar to those of the third embodiment, the following advantages can be obtained. In other words, the sputtered particle collection shield 310b is formed in an upward convex curved shape with respect to the target 31 so that the distance between the target 31 and the sputtered particle collection shield 310b increases toward the permanent magnets 38a and 38b. Since it is curved to have a cross-sectional shape, when some of the sputtered particles adhering to the sputtered particle collection shield 310b are separated, the probability of the separated sputtered particles traveling toward the film-forming object 1 increases. , the film formation speed can be improved. In addition, this sputtered particle collection shield 310b is heated from the back surface by a heater like the sputtered particle collection shield 310 in the fifth embodiment, thereby generating detached sputtered particles traveling in the direction of the object 1 to be deposited. can be further increased, and the film formation rate can be further improved.

<Fourteenth embodiment>
[Deposition equipment]
FIG. 15 shows a film forming apparatus according to the fourteenth embodiment. This film forming apparatus uses the sputtering film forming source according to the eighth embodiment. This film-forming apparatus is a vacuum film-forming apparatus that is mainly used when the object to be film-formed is in the form of a substrate. is. This film forming apparatus has a vacuum chamber 110 . The vacuum chamber 110 is evacuated to a vacuum pressure called high vacuum by turbomolecular pumps 111 and 111', which are pumps for exhausting molecular flow. A viscous flow exhaust pump (not shown) is connected to the exhaust side of each of the turbomolecular pumps 111 and 111'. After that, the turbomolecular pumps 111 and 111' are activated to evacuate to a vacuum pressure called high vacuum. A cryopump or a diffusion pump may be used instead of the turbomolecular pumps 111 and 111'.

At least one of the sputtering deposition sources S ₁ according to the eighth embodiment is arranged in the vacuum chamber 110 with the opening of the space 20 facing the deposition target 1 . A sputtering gas 112 is introduced into the space 20 of the sputtering deposition source _S1 . The object 1 to be deposited passes through the area facing the space 20 at a constant transport speed in the direction indicated by the arrow 2 or in the opposite direction by a transport driving mechanism (not shown). can be formed with good film thickness distribution and low damage. This transfer speed control is performed by feedback control of the rotation speed of the electric motor that generates the driving force by the signal from the encoder built into the electric motor, and then the conversion of the worm gear, ball screw, rack and pinion gear, etc. It is done by converting it into linear motion with a mechanism. Here, the relationship between the linear motion speed at which the film-forming object 1 is transported and the rotational motion speed of the electric motor is determined accurately by the configuration of the conversion mechanism described above. The sputtering film formation source S ₁ installed in the vacuum chamber 110 may be the sputtering film formation source according to any one of the first to seventh embodiments. faces the object 1 to be film-formed, and at least one unit is installed. As a result, it becomes possible to form a film by sputtering without damaging the object 1 to be film-formed as compared with the conventional art.

In addition, when the substrate of the film formation target 1 is smaller than the film formation region of the sputtering film formation source S ₁ , the substrate of the film formation target 1 is held still in the film formation region in FIG. By forming a film by using a thin film, the film forming speed is improved and the productivity is increased. In addition, since there is no need to provide a mechanism for passing the film-forming object 1 through the film-forming region at a constant speed, the size of the film-forming apparatus can be reduced and the economic efficiency can be improved. can. Furthermore, it becomes possible to form a film by sputtering at a higher film formation rate without damaging the object 1 to be film-formed than in the conventional art.

According to the fourteenth embodiment, advantages similar to those of the eighth embodiment can be obtained.

<Fifteenth Embodiment>
[Deposition equipment]
FIG. 16 shows a film forming apparatus according to the fifteenth embodiment. This film forming apparatus uses the sputtering film forming source S ₁ according to the eighth embodiment and the sputtering film forming sources S ₂ and S ₃ according to the tenth embodiment. This film forming apparatus has a vacuum chamber 120 . The vacuum chamber 120 is evacuated to a vacuum pressure called high vacuum by turbomolecular pumps 121 and 121', which are pumps for exhausting molecular flow. A viscous flow exhaust pump (not shown) is connected to the exhaust side of each of the turbomolecular pumps 121 and 121'. After that, the turbomolecular pumps 121 and 121' are started to evacuate to a vacuum pressure called high vacuum. A cryopump or a diffusion pump may be used instead of the turbomolecular pumps 121 and 121'.

In the lower part of the vacuum chamber 120, a sputtering deposition source _S1 similar to that of the eighth embodiment is arranged. In the vacuum chamber 120, a target support roller 4 is provided above the sputtering film formation source _S1 . In this case, the rotating shaft of the film-forming object support roller 4 is set in a direction parallel to the gravity. The film-forming object 3 is adhered or fixed to the film-forming object supporting roller 4 . In the vacuum chamber 120, the sputtering film forming sources _S2 and _S3 according to the tenth embodiment are arranged on both sides of the film-forming object supporting roller 4 so as to face the film-forming object supporting roller 4. there is A sputtering gas 112 is introduced into the space 20 of the sputtering deposition source S ₁ , and sputtering gases 122 and 122 ′ are introduced into the spaces 30 of the sputtering deposition sources S ₂ and S ₃ , respectively. The object 3 to be film-formed is rotated at a constant angular velocity in the direction of rotation indicated by an arrow 5 or in the direction of reverse rotation by a rotary drive mechanism (not shown), through the space 20 of the sputtering film-forming source S ₁ , the sputtering film-forming source S 2 , and the film-forming source S ₂ . By passing through the region of _S3 facing the space 30, a film having a desired film thickness can be formed with good film thickness distribution and low damage. This control of the angular velocity is performed by feedback-controlling the rotational angular velocity of the electric motor that generates the driving force by means of a signal from an encoder built into the electric motor. The power is transmitted to the roller 4 by a combination of gears, a timing belt, or the like. The peripheral speed at which the film-forming object 3 is conveyed is accurately determined by the diameter of the film-forming object supporting roller 4 and the rotational angular velocity control of the electric motor. As a result, it becomes possible to form a film by sputtering without damaging the object 3 to be film-formed as compared with the conventional art.

In the fifteenth embodiment, the rotation axis of the film formation target support roller 4 is set in a direction parallel to gravity. There is no problem even if it is installed in a vertical direction.

According to the fifteenth embodiment, in the film forming apparatus of the type in which the film is formed on the film-forming object 3 while rotating the film-forming object support roller 4 to which the film-forming object 3 is in close contact or fixed, In addition to being able to obtain the same advantages as the eighth and tenth embodiments, three sputtering deposition sources S ₁ , S ₂ , S ₃ can be used to perform deposition at high speed, or two Advantages can also be obtained in that one or three types of films can be deposited.

<Sixteenth Embodiment>
[Deposition equipment]
FIG. 17 shows a film forming apparatus according to the sixteenth embodiment. This film-forming apparatus is a roll-to-roll type film-forming apparatus using a roll-shaped film as the object 3 to be film-formed. As shown in FIG. 17, this film forming apparatus has a vacuum chamber 130 in addition to the vacuum chamber 120 . The vacuum chamber 130 is separated from the vacuum chamber 120 by partition plates 131 and 131'. In the vacuum chamber 120, similarly to the film forming apparatus according to the fifteenth embodiment, there are installed the object support roller 7 and the three sputtering film forming sources _S1 , _S2 and _S3 . A sputtering gas 112 is introduced into the space 20 of the sputtering deposition source S ₁ , and sputtering gases 122 and 122 ′ are introduced into the spaces 30 of the sputtering deposition sources S ₂ and S ₃ , respectively. An opening is provided between the partition plate 131 and the partition plate 131', and the uppermost part of the film-formed body support roller 7 is inserted into this opening. In the vacuum chamber 130, an unwinding side roll 132, a winding side roll 133, and guide rollers 134 and 134' are installed in parallel with the support rollers 7 for the object to be deposited. The film-shaped object 3 is attached to the unwinding roll 132 in a roll state. While rotating at a constant peripheral speed while being in close contact with the support roller 7, film formation is carried out with little damage by the respective sputtering film formation sources _S1 , _S2 , and _S3 . After that, it is continuously wound up by the winding side roll 133 via the guide roller 134 ′, so that the film of the desired film thickness is formed with good film thickness distribution and low damage. is completed. Sputtered particles, that is, film-forming material, leaking out from the film-forming region are shielded by the partition plates 131 and 131′, so that they do not reach the unwinding-side roll 132 and the winding-side roll 133. , to prevent excess film-forming material from adhering to the film-form object 3 to be film-formed. Here, the control of the peripheral speed is performed by feedback-controlling the rotation angular speed of the electric motor that generates the driving force by the signal from the encoder built in the electric motor, and then the substrate that supports the film-forming object 3. The power is transmitted to the film forming body support roller 7 by a combination of gears, a timing belt, or the like. Here, the peripheral speed at which the film-forming object 3 is conveyed is accurately determined by the diameter of the film-forming object supporting roller 7 and the rotational angular velocity control of the electric motor described above. The unwinding side roll 132 and the winding side roll 133 are driven by an electric motor, and the torque applied to this electric motor is constantly monitored and controlled so that the torque is always a constant value set in advance. there is Since the guide rollers 134 and 134' are free rollers, they are not driven by an electric motor or the like, and have a mechanism that rotates according to the peripheral speed of the transported film-like object 3 that is transported in close contact. . In the case of rotation in the direction opposite to arrow 5, the functions of the unwinding roll 132 and the winding roll 133 are reversed; It becomes the delivery side roll.

According to the sixteenth embodiment, in addition to being able to obtain the same advantages as those of the fifteenth embodiment, film deposition can be performed by roll-to-roll sputtering without damaging the film-forming object 3 as compared with the conventional art. You can get the advantage of being able to

<Seventeenth embodiment>
[Sputtering deposition source]
FIG. 18 shows a sputtering deposition source according to the seventeenth embodiment. This sputtering deposition source uses a rotary type target. As shown in FIG. 18, in this sputtering film formation source, targets 141a and 141b arranged to face each other with a space 140 interposed therebetween are formed in a cylindrical shape, and each of them is rotated at a constant angular velocity at all times to achieve The targets 141a and 141b are intended to have a longer life. The magnetic circuits built in the targets 141a and 141b are respectively composed of peripheral permanent magnets 142a and 142b, central permanent magnets 143a and 143b, and yokes 144a and 144b. Magnetic lines of force 145a and 145b for generating plasma are formed. In addition, yokes 29a and 29b are provided in an independent state with a sufficient distance from the yoke 144a of the magnetic circuit provided on the target 141a and the yoke 144b of the magnetic circuit provided on the target 141b. By arranging a permanent magnet 28a and a permanent magnet 28b in each of the yokes 29a and 29b and a yoke 29c on the opposite side of the space 140 between the yokes 29a and 29b, the magnetic lines of force 27 shielding the plasma generated in the space 140 on the film-forming object 1 side. However, plasma (not shown) leaking toward the object 1 to be film-formed can be effectively shielded, so film formation with low damage can be effectively realized.

According to the seventeenth embodiment, in addition to being able to obtain the same advantages as the first embodiment, it is possible to obtain the advantage of being able to extend the life of the targets 141a and 141b.

<Eighteenth Embodiment>
[Sputtering deposition source]
FIG. 19 shows a sputtering deposition source according to the eighteenth embodiment. As shown in FIG. 19, in this sputtering deposition source, in the seventeenth embodiment, as in the second embodiment, auxiliary permanent magnets M ₁ and M ₂ are provided, and auxiliary permanent magnets M ₃ and M ₄ are provided on the surface of the permanent magnet 28b on the target 141b side. Others are the same as those of the seventeenth embodiment as long as it does not contradict its nature.

According to the eighteenth embodiment, in addition to advantages similar to those of the seventeenth embodiment, advantages similar to those of the second embodiment can be obtained.

<Nineteenth embodiment>
[Sputtering deposition source]
FIG. 20 shows a sputtering deposition source according to the nineteenth embodiment. This sputtering deposition source uses a rotary type target. As shown in FIG. 20, in this sputtering deposition source, the cylindrical target 141 is always rotated at a constant angular velocity to extend its life. A magnetic circuit built in the cylindrical target 141 is composed of an outer peripheral permanent magnet 142, a central permanent magnet 143, and a yoke 144, and forms magnetic lines of force 145 for generating magnetron plasma on the surface of the cylindrical target 141. In this case, there is no target facing the cylindrical target 141, and instead the sputtered particle collection shield 310a is arranged with the space 30 interposed therebetween. Since arc discharge does not occur even if deposits fall on the surface, there is an advantage in that the film-forming object 1 is not contaminated by foreign matters scattered when an arc occurs. Furthermore, as in the twelfth embodiment, the sputtered particle collection shield 310a is inclined toward the opening of the space 150 on the film formation target 1 side, so that the sputtered particle collection shield 310a is adhered to. When some of the sputtered particles are detached, the probability of generation of the detached sputtered particles moving in the direction of the film-forming object 1 is increased, so that the deposition rate can be improved. In addition, this sputtered particle collection shield 310a may be heated from the back surface by a heater as in the fifth embodiment. The number can be further increased, and the film forming speed can be further improved.

<Twentieth Embodiment>
[Sputtering deposition source]
FIG. 21 shows a sputtering deposition source according to the twentieth embodiment. As shown in FIG. 21, in this sputtering deposition source, in the 19th embodiment, as in the second embodiment, an auxiliary permanent magnet M ₁ is provided on the surface of the permanent magnet 38a on the side of the cylindrical target 141 in the same manner as in the second embodiment. , M ₂ are provided. Others are the same as those of the nineteenth embodiment as long as it does not contradict its nature.

According to the twentieth embodiment, in addition to advantages similar to those of the nineteenth embodiment, advantages similar to those of the second embodiment can be obtained.

Although the embodiments and examples of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments and examples, and various modifications based on the technical idea of the present invention can be made. It is possible.

For example, the numerical values, materials, structures, shapes, etc. given in the above-described embodiments and examples are merely examples, and numerical values, materials, structures, shapes, etc. different from these may be used as necessary.

Incidentally, the permanent magnet 28a in the second, ninth and eighteenth embodiments may be a permanent magnet formed by auxiliary permanent magnets _M.sub.1 and _M.sub.2 using a magnetic material, and the permanent magnet 28b is magnetic. A body may be used to form a permanent magnet with auxiliary permanent magnets M ₃ and M ₄ . Further, the permanent magnet 38a in the fourth, eleventh and twentieth embodiments may be a permanent magnet made of a magnetic material and formed by auxiliary permanent magnets _M1 and _M2 .

Reference Signs List 1, 3 film-formed object 4 film-formed object support roller 20, 30, 140, 150 space 21a, 21b, 31 target 22a, 22b, 23a, 23b, 28a, 28b, 32, 33 permanent magnet 38a, 38b, 142a , 142b, 143a, 143b Permanent magnets 145a, 145b Permanent magnets 24a, 24b, 29a, 29b, 29c, 34, 39a, 39b, 39c Yokes 144a, 144b Yokes 26a, 26a', 26b, 26b', 27, 36, 36 ', 37 Magnetic lines of force 145a, 145b Magnetic lines of force 41, 41a Heater 42 Power source for heater 71a, 71b Backing plate 73a, 73b Electrical insulation sheet 77 DC power source for plasma generation 110, 120, 130 Vacuum chamber 141a, 141b Cylindrical target 310, 310a Sputtering Particle collection shield _M1 - _M4 auxiliary permanent magnet

Claims (26)

1. a first target and a second target arranged to face each other;
   A first permanent magnet provided on the back surface of the first target and provided in a portion corresponding to the outer peripheral portion of the first target so that the magnetization direction is perpendicular to the first target; and the first target. a second permanent magnet provided in a portion corresponding to the central portion of the first permanent magnet so as to have a polarity opposite to that of the first permanent magnet; and a first yoke connecting the first permanent magnet and the second permanent magnet to each other a first magnetic circuit;
   Provided on the back surface of the second target, a portion corresponding to the outer peripheral portion of the second target is provided so that the magnetization direction is perpendicular to the second target and has a polarity opposite to that of the first permanent magnet. and a fourth permanent magnet provided in a portion corresponding to the central portion of the second target so as to have a polarity opposite to that of the third permanent magnet, the third permanent magnet, and the fourth permanent magnet. a second magnetic circuit formed by a second yoke coupling the
   a fifth permanent magnet provided on one end side of the first target in parallel with the first permanent magnet so as to have the same polarity as the first permanent magnet;
   a sixth permanent magnet provided on one end side of the second target parallel to the third permanent magnet and facing the fifth permanent magnet so as to have the same polarity as the third permanent magnet;
   a third yoke coupling the fifth permanent magnet and the sixth permanent magnet to each other outside the first magnetic circuit and the second magnetic circuit;
   A sputtering deposition source having a
2. A first auxiliary permanent magnet and a second auxiliary permanent magnet having opposite polarities are mounted on the surface of the fifth permanent magnet on the first permanent magnet side so that the magnetization direction is perpendicular to the magnetization direction of the fifth permanent magnet. 5 permanent magnets, the magnetic pole of the first auxiliary permanent magnet on the side opposite to the fifth permanent magnet has the same polarity as the magnetic pole of the first permanent magnet on the first yoke side, and A third auxiliary permanent magnet and a fourth auxiliary permanent magnet having opposite polarities are mounted on the surface of the sixth permanent magnet on the side of the third permanent magnet so that the magnetization direction is perpendicular to the magnetization direction of the sixth permanent magnet. 2. A magnetic pole of said third auxiliary permanent magnet which is provided in order toward the tip of said permanent magnet and which is on the opposite side of said sixth permanent magnet has the same polarity as the magnetic pole of said third permanent magnet on said second yoke side. A sputtering deposition source as described.
3. The sputtering deposition source according to claim 1, wherein the second permanent magnet and the fourth permanent magnet are arranged closer to the third yoke.
4. 3. A backing plate is provided between said first target and said first and second permanent magnets and between said second target and said third and fourth permanent magnets, respectively. 2. The sputtering deposition source according to 1.
5. The sputtering deposition source according to claim 1, wherein target shields are provided in the vicinity of the outer periphery of the first target and in the vicinity of the outer periphery of the second target.
6. The sputtering film formation source according to claim 1, wherein the third yoke also serves as a housing of the sputtering film formation source.
7. a target and a sputter particle collection shield positioned opposite each other;
   A seventh permanent magnet provided on the back surface of the target and corresponding to the outer peripheral portion of the target so that the magnetization direction is perpendicular to the target, and a portion corresponding to the central portion of the target. a magnetic circuit formed by an eighth permanent magnet provided to have a polarity opposite to that of the seventh permanent magnet and a fourth yoke coupling the seventh permanent magnet and the eighth permanent magnet to each other;
   a ninth permanent magnet provided on one end side of the target in parallel with the seventh permanent magnet so as to have the same polarity as the seventh permanent magnet;
   a tenth permanent magnet provided on one end side of the sputter particle collection shield parallel to the seventh permanent magnet and opposed to the ninth permanent magnet so as to have the same polarity as the ninth permanent magnet; ,
   a fifth yoke coupling the ninth permanent magnet and the tenth permanent magnet to each other outside the magnetic circuit and the sputter particle collection shield;
   A sputtering deposition source having a
8. On the surface of the ninth permanent magnet on the seventh permanent magnet side, a fifth auxiliary permanent magnet and a sixth auxiliary permanent magnet having opposite polarities are mounted on the surface of the ninth permanent magnet so that the magnetization direction is perpendicular to the magnetization direction of the ninth permanent magnet. 9. The magnetic pole of the fifth auxiliary permanent magnet on the opposite side of the ninth permanent magnet is the same polarity as the magnetic pole of the seventh permanent magnet on the fourth yoke side. 8. The sputtering deposition source according to 7 above.
9. The sputtering deposition source according to claim 7, wherein the eighth permanent magnet is arranged closer to the fifth yoke.
10. The sputtering deposition source according to claim 7, wherein a heater is provided on the back surface of the sputter particle collection shield.
11. The sputtering deposition source according to claim 7, wherein the sputter particle collection shield is provided parallel to the target.
12. The sputter particle trapping shield is inclined with respect to the target such that the distance between the sputter particle trapping shield and the target increases linearly toward the ninth permanent magnet and the tenth permanent magnet. 8. The sputtering deposition source according to claim 7.
13. The sputter particle trapping shield is curved convexly toward the target such that the distance between the sputter particle trapping shield and the target increases toward the ninth and tenth permanent magnets. 8. A sputtering deposition source according to claim 7, having a curved cross-sectional shape.
14. The sputtering deposition source according to claim 7, wherein a backing plate is provided between the target and the seventh and eighth permanent magnets.
15. The sputtering deposition source according to claim 7, wherein a target shield is provided near the outer periphery of the target.
16. The sputtering film formation source according to claim 7, wherein the fifth yoke also serves as a housing of the sputtering film formation source.
17. a first cylindrical target and a second cylindrical target arranged parallel and facing each other;
    One magnetic pole provided inside the first cylindrical target is provided so as to face the inner peripheral surface of the first cylindrical target and extend in the direction of the central axis of the first cylindrical target. an eleventh permanent magnet and a twelfth permanent magnet which are separated from the eleventh permanent magnet so as to surround the outer periphery of the eleventh permanent magnet and which are opposite in polarity to the eleventh permanent magnet, the eleventh permanent magnet, and a third magnetic circuit formed by a sixth yoke coupling the twelfth permanent magnets together;
    One magnetic pole provided inside the second cylindrical target is provided so as to face the inner peripheral surface of the second cylindrical target and extend in the direction of the central axis of the second cylindrical target. a thirteenth permanent magnet provided with a polarity opposite to that of the eleventh permanent magnet; a fourth magnetic circuit formed by a fourteenth permanent magnet and a seventh yoke coupling the thirteenth permanent magnet and the fourteenth permanent magnet to each other;
    a fifteenth permanent magnet facing the first cylindrical target and parallel to a plane containing the central axis of the first cylindrical target and the central axis of the second cylindrical target;
    a 16th permanent magnet having the same polarity as the 15th permanent magnet provided parallel to the plane facing the second cylindrical target and facing the 15th permanent magnet;
    an eighth yoke coupling the fifteenth permanent magnet and the sixteenth permanent magnet to each other outside the third magnetic circuit and the fourth magnetic circuit;
    A sputtering deposition source having a
18. A seventh auxiliary permanent magnet and an eighth auxiliary permanent magnet having opposite polarities are mounted on the surface of the fifteenth permanent magnet on the first cylindrical target side such that the magnetization direction is perpendicular to the magnetization direction of the fifteenth permanent magnet. The magnetic pole of the seventh auxiliary permanent magnet, which is provided in order toward the tip of the fifteenth permanent magnet and is opposite to the fifteenth permanent magnet, has the same polarity as the magnetic pole of the fifteenth permanent magnet on the eighth yoke side, A ninth auxiliary permanent magnet and a tenth auxiliary permanent magnet having opposite polarities are mounted on the surface of the sixteenth permanent magnet on the second cylindrical target side such that the magnetization direction is perpendicular to the magnetization direction of the sixteenth permanent magnet. The magnetic pole of the ninth auxiliary permanent magnet, which is provided in order toward the tip of the sixteenth permanent magnet and on the side opposite to the sixteenth permanent magnet, has the same polarity as the magnetic pole of the sixteenth permanent magnet on the eighth yoke side. Item 18. The sputtering deposition source according to Item 17.
19. The sputtering film formation source according to claim 17, wherein the eighth yoke also serves as a housing of the sputtering film formation source.
20. a cylindrical target and a sputter particle collection shield positioned opposite each other;
    A seventeenth permanent magnet provided inside the cylindrical target so that one magnetic pole faces the inner peripheral surface of the cylindrical target and extends in the central axis direction of the cylindrical target. and an 18th permanent magnet provided away from the 17th permanent magnet so as to surround the outer periphery of the 17th permanent magnet and having a polarity opposite to that of the 17th permanent magnet, the 17th permanent magnet, and the 18th permanent magnet a magnetic circuit formed by a ninth yoke coupled to each other;
    a nineteenth permanent magnet facing the cylindrical target and parallel to a plane including the central axis of the cylindrical target;
    a twentieth permanent magnet having the same polarity as the nineteenth permanent magnet, provided facing the sputtered particle collection shield in parallel with the plane and facing the nineteenth permanent magnet;
    a tenth yoke coupling the nineteenth permanent magnet and the twentieth permanent magnet to each other outside the magnetic circuit and the sputter particle collection shield;
    A sputtering deposition source having a
21. 21. The apparatus according to claim 20, wherein an eleventh auxiliary permanent magnet and a twelfth auxiliary permanent magnet having polarities opposite to each other are provided on the cylindrical target side surface of the nineteenth permanent magnet in order toward the tip of the nineteenth permanent magnet. Sputtering deposition source.
22. The sputtering deposition source according to claim 20, wherein a heater is provided on the back surface of the sputter particle collection shield.
23. 21. The sputtering deposition source according to claim 20, wherein said sputter particle collection shield is provided perpendicular to said plane.
24. The sputtering deposition source according to claim 20, wherein said sputter particle collection shield is inclined with respect to said plane.
25. The sputtering film formation source according to claim 20, wherein the tenth yoke also serves as a housing of the sputtering film formation source.
26. A deposition apparatus having the sputtering deposition source according to any one of claims 1 to 25.

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